CN103088426A - Method for reducing seed crystal growth face defects of silicon carbide crystals - Google Patents
Method for reducing seed crystal growth face defects of silicon carbide crystals Download PDFInfo
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- CN103088426A CN103088426A CN2013100249452A CN201310024945A CN103088426A CN 103088426 A CN103088426 A CN 103088426A CN 2013100249452 A CN2013100249452 A CN 2013100249452A CN 201310024945 A CN201310024945 A CN 201310024945A CN 103088426 A CN103088426 A CN 103088426A
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Abstract
The invention relates to a method for reducing seed crystal growth face defects of silicon carbide crystals. The method comprises the following steps of: tightly pasting the Si faces of two seed crystals together, and putting the tightly pasted Si faces to a corrosive consisting of molten KOH and K2CO3; and heating up the mixture to 400 DEG C and corroding the C faces of the seed crystal growth faces under the constant-temperature condition of 400 DEG C, so that the seed crystal growth face defects of the silicon carbide crystals are reduced by corroding off the defects caused by grinding and polishing. According to the method disclosed by the invention, the defects, which are caused by grinding and polishing, on the C faces of the growth faces are quickly and simply corroded off on the condition of effectively protecting the Si faces on the growth back faces from being not corroded, so that the quantity of the defects on the growth faces is lower than that of the un-corroded defects by about five times, thereby reducing the crystal defects obtained by regeneration, improving the crystal quality and preventing the defects on the Si faces from being reversely sublimated and extended to the growth faces due to expansion.
Description
Technical field
The present invention relates to a kind of method that reduces carborundum crystals seeded growth plane defect.
Background technology
In the growing silicon carbice crystals process, defective major part in crystal can come from seed crystal, growth at present is the single-chip of single or double grinding, polishing with silicon carbide seed, due to grind, polishing causes from the teeth outwards as defectives such as cut, helical dislocation, edge dislocation basal plane dislocations, makes the defects count of seed crystal face increase again several times on the basis that growth causes.
SiC is as third generation broad-band gap (Wide Band-gap Semiconductor, WBS) representative of semiconductor material, it has broad-band gap, high critical breakdown electric field, high heat conductance, high carrier saturation drift velocity and the fabulous characteristics such as chemical stability, at photoelectron and microelectronic, has huge application potential.
At present, be proved to be can the most effective standard method of growing large-size SiC monocrystalline for the PVT method.Typical S iC crystal growing chamber is comprised of seed crystal support and crucible body, and the effect of seed crystal support is to place seed crystal, and the effect of crucible is to place powder.in the growing silicon carbice crystals process, the quality of silicon carbide seed is the principal element that determines the rear crystal quality of growth, inherent defect but also grinding in addition that seed crystal face not only exists growth to cause, the defective that polishing brings, these defectives all can have influence on the quality of regrowth crystal, the method that addresses these problems at present has, H etching and chemical rightenning (CMP) method, H etching method cost is higher, expend time in longer, be difficult to operation and depth of corrosion only about 1 μ m, can not arrive the depth of defect that grinding and polishing causes, also can not reach desirable effect, chemical rightenning (CMP) method, also that cost is higher and must be in ultra-clean chamber, the dish that is about two hours expends time in, and be difficult to operation (on batching, certain precision being arranged).
In the growing silicon carbice crystals process, defective major part in crystal can come from seed crystal, growth at present is the single-chip of single or double grinding, polishing with silicon carbide seed, due to grind, polishing causes from the teeth outwards as defectives such as cut, helical dislocation, edge dislocation basal plane dislocations, makes the defects count of seed crystal face increase again several times on the basis that growth causes.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method that improves the minimizing carborundum crystals seeded growth plane defect of crystal quality.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of method that reduces carborundum crystals seeded growth plane defect comprises the following steps: the Si face of two seed crystals is pasted together closely, then puts it into KOH and the K of melting
2CO
3In the etching reagent that forms, then be heated to 400 ℃, under the condition of 400 ℃ of constant temperature, seeded growth face C face corroded, erode the defective that grindings, polishing bring, with minimizing carborundum crystals seeded growth plane defect;
Wherein, described KOH and K
2CO
3Mass ratio be 200:5.
The invention has the beneficial effects as follows: the inventive method is protected under the prerequisite that growth back side Si face is not corroded effectively; simply erode fast the defective that on aufwuchsplate C face, grinding, polishing cause, make the defects count on aufwuchsplate lower approximately 5 times than uncorroded.Thereby reduce the lattice defect that regrowth obtains, improve crystal quality, avoid causing it oppositely distil and extend to aufwuchsplate the defective expansion of Si face.
Under the condition of 400 ℃ of constant temperature, seeded growth face C face is corroded, erode the defective that grinding, polishing bring, because the depth of defect that grinding and polishing causes is at 5～10 μ m, and the degree of depth of the inventive method corrosion is 25～40 μ m, therefore the defective that grinding and polishing can be caused erodes entirely.
It is the Si face that the inventive method will be avoided the corrosion growth back side, and corrosion can make all defect of Si face be exaggerated the corrosion pit of formation rule, and these corrosion pits can easier reverse distillations and extended to aufwuchsplate in process of growth.Because the chemical stability of silicon carbide is very good, therefore it can not corroded by any etching reagent at normal temperatures, and the highly basic of at high temperature melting can only be accomplished preferential etch, namely preferential corrosion and corrosion speed are different on Si face and C face in defective place, the corrosion speed of C face is approximately 4 times of Si face, again because the alkaline corrosion agent is anisotropic etch, the SiC monocrystalline is Hexagonal Close-packed, therefore not only corrosion is not fallen the affected layer that grinding and polishing causes and can be formed six rib corrosion pits in defective position on the Si face, the larger corrosion pit of defective is larger.And the C face is fast because of corrosion speed, and corrosion pit does not have specific shape, all approaches circle, therefore can erode the affected layer of 5～10 μ m.
After eroding the damage of C face, it is separated as seed crystal.Thereby reduce the defective of seeded growth face, promote the quality of growing crystal.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the time of described corrosion is 15～20 minutes.
Two seed crystal Si faces are selected and can not be pasted together by alkali corrosion and the caking agent that can dissolve under acidic conditions.
Embodiment
Below principle of the present invention and feature are described, example only be used for to be explained the present invention, is not be used to limiting scope of the present invention.
A kind of method that reduces carborundum crystals seeded growth plane defect comprises the following steps:
The Si face of two seed crystals is pasted together closely, then puts it into KOH and the K of melting
2CO
3In the etching reagent that forms, then be heated to 400 ℃, under the condition of 400 ℃ of constant temperature, seeded growth face C face carried out the corrosion of 15～20 minutes, erode the defective that grindings, polishing bring, with minimizing carborundum crystals seeded growth plane defect; Then it is separated as seed crystal.
Wherein, described KOH and K
2CO
3Mass ratio be 200:5.
Adopt the C face of the silicon carbide seed after corroding to do aufwuchsplate, the S i face that the back side is not corroded pastes on seed crystal support, carries out the growth of PVT method.
The above is only preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (2)
1. a method that reduces carborundum crystals seeded growth plane defect, is characterized in that: comprise the following steps: the Si face of two seed crystals is pasted together closely, then puts it into KOH and the K of melting
2CO
3In the etching reagent that forms, then be heated to 400 ℃, under the condition of 400 ℃ of constant temperature, seeded growth face C face corroded, erode the defective that grindings, polishing bring, with minimizing carborundum crystals seeded growth plane defect;
Wherein, described KOH and K
2CO
3Mass ratio be 200:5.
2. the method for minimizing carborundum crystals seeded growth plane defect according to claim 1, it is characterized in that: the time of described corrosion is 15～20 minutes.
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| CN2013100249452A CN103088426A (en) | 2013-01-23 | 2013-01-23 | Method for reducing seed crystal growth face defects of silicon carbide crystals |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866398A (en) * | 2014-03-26 | 2014-06-18 | 山东天岳晶体材料有限公司 | Corrosion method and device for silicon carbide wafers |
| CN104505338A (en) * | 2014-12-24 | 2015-04-08 | 国家电网公司 | Pre-cleaning method before epitaxy of silicon carbide wafer |
| CN105140111A (en) * | 2015-08-11 | 2015-12-09 | 中国科学院半导体研究所 | Method for removing punch-through defects on silicon carbide epitaxial surface |
| CN105420812A (en) * | 2015-09-16 | 2016-03-23 | 新疆天科合达蓝光半导体有限公司 | Method for peeling off silicon carbide seeds from seed holder |
| CN106048716A (en) * | 2016-06-30 | 2016-10-26 | 山东天岳先进材料科技有限公司 | Optimization method of silicon carbide substrate |
| CN113122922A (en) * | 2020-06-09 | 2021-07-16 | 北京世纪金光半导体有限公司 | Seed crystal for growth of large-size silicon carbide crystal |
| CN113594027A (en) * | 2021-07-27 | 2021-11-02 | 兰州大学 | Method for corroding surface of 4H-silicon carbide |
| CN115595663A (en) * | 2022-12-01 | 2023-01-13 | 浙江大学杭州国际科创中心（Cn） | Treatment method of silicon carbide seed crystal and growth method of silicon carbide crystal |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866398A (en) * | 2014-03-26 | 2014-06-18 | 山东天岳晶体材料有限公司 | Corrosion method and device for silicon carbide wafers |
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| CN104505338A (en) * | 2014-12-24 | 2015-04-08 | 国家电网公司 | Pre-cleaning method before epitaxy of silicon carbide wafer |
| CN104505338B (en) * | 2014-12-24 | 2017-11-07 | 国家电网公司 | Pre-cleaning method before a kind of silicon carbide wafer extension |
| CN105140111A (en) * | 2015-08-11 | 2015-12-09 | 中国科学院半导体研究所 | Method for removing punch-through defects on silicon carbide epitaxial surface |
| CN105420812A (en) * | 2015-09-16 | 2016-03-23 | 新疆天科合达蓝光半导体有限公司 | Method for peeling off silicon carbide seeds from seed holder |
| CN105420812B (en) * | 2015-09-16 | 2019-02-05 | 新疆天科合达蓝光半导体有限公司 | A method of removing silicon carbide seed from seed crystal support |
| CN106048716A (en) * | 2016-06-30 | 2016-10-26 | 山东天岳先进材料科技有限公司 | Optimization method of silicon carbide substrate |
| CN113122922A (en) * | 2020-06-09 | 2021-07-16 | 北京世纪金光半导体有限公司 | Seed crystal for growth of large-size silicon carbide crystal |
| CN113594027A (en) * | 2021-07-27 | 2021-11-02 | 兰州大学 | Method for corroding surface of 4H-silicon carbide |
| CN115595663A (en) * | 2022-12-01 | 2023-01-13 | 浙江大学杭州国际科创中心（Cn） | Treatment method of silicon carbide seed crystal and growth method of silicon carbide crystal |
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Address after: 102206, Changping District, Shahe, Beijing Town, North Village Road, West Bridge, Shahe industrial city Applicant after: Hebei Tongguang Crystal Co., Ltd. Address before: Four building B, building 071051, building six, Science Park, 5699 North Second Ring Road, Hebei, Baoding, Applicant before: Baoding Kerui Crystal Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: BAODING KERUI CRYSTAL CO., LTD. TO: HEBEI TONGGUANG CRYSTAL CO., LTD. |
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Application publication date: 20130508 |