CN103078038B - 发光元件、制造发光元件的方法以及发光装置 - Google Patents

发光元件、制造发光元件的方法以及发光装置 Download PDF

Info

Publication number
CN103078038B
CN103078038B CN201210397869.5A CN201210397869A CN103078038B CN 103078038 B CN103078038 B CN 103078038B CN 201210397869 A CN201210397869 A CN 201210397869A CN 103078038 B CN103078038 B CN 103078038B
Authority
CN
China
Prior art keywords
light
active layer
film
emitting component
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210397869.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN103078038A (zh
Inventor
横关弥树博
小山享宏
成井启修
青柳秀和
塩见治典
河崎孝彦
伊藤胜利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN103078038A publication Critical patent/CN103078038A/zh
Application granted granted Critical
Publication of CN103078038B publication Critical patent/CN103078038B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)
CN201210397869.5A 2011-10-26 2012-10-18 发光元件、制造发光元件的方法以及发光装置 Expired - Fee Related CN103078038B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011-234637 2011-10-26
JP2011234637 2011-10-26
JP2011283570A JP6035736B2 (ja) 2011-10-26 2011-12-26 発光素子およびその製造方法、並びに発光装置
JP2011-283570 2011-12-26

Publications (2)

Publication Number Publication Date
CN103078038A CN103078038A (zh) 2013-05-01
CN103078038B true CN103078038B (zh) 2017-08-11

Family

ID=48154509

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210397869.5A Expired - Fee Related CN103078038B (zh) 2011-10-26 2012-10-18 发光元件、制造发光元件的方法以及发光装置

Country Status (3)

Country Link
US (1) US9455373B2 (cg-RX-API-DMAC7.html)
JP (1) JP6035736B2 (cg-RX-API-DMAC7.html)
CN (1) CN103078038B (cg-RX-API-DMAC7.html)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014187325A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 半導体発光装置及びその製造方法
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9105813B1 (en) * 2014-05-30 2015-08-11 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
CN104064654B (zh) * 2014-06-18 2017-07-11 工业和信息化部电子第五研究所 形成芯片的钝化膜的方法、芯片的钝化膜的结构及芯片
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9484492B2 (en) * 2015-01-06 2016-11-01 Apple Inc. LED structures for reduced non-radiative sidewall recombination
US9793436B2 (en) 2015-01-16 2017-10-17 Epistar Corporation Semiconductor light-emitting device
US10811562B2 (en) 2015-02-03 2020-10-20 Sony Corporation Light emitting diode
JP2016143825A (ja) * 2015-02-04 2016-08-08 晶元光電股▲ふん▼有限公司 半導体発光部品
DE102015120089A1 (de) 2015-11-19 2017-05-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
KR102054091B1 (ko) 2015-12-22 2019-12-09 애플 인크. 비방사 재결합을 완화하기 위한 led 측벽 프로세싱
CN109155345B (zh) * 2016-06-30 2022-10-28 苹果公司 用于减少的非辐射侧壁复合的led结构
KR102568353B1 (ko) 2018-08-16 2023-08-18 삼성디스플레이 주식회사 발광 소자, 이의 제조방법 및 발광 소자를 포함하는 표시 장치
KR20240107341A (ko) * 2018-11-06 2024-07-09 더 리전츠 오브 더 유니버시티 오브 캘리포니아 초저 누설 전류를 갖는 마이크로-led
US11677042B2 (en) * 2019-03-29 2023-06-13 Meta Platforms Technologies, Llc Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
GB2584150B (en) * 2019-05-24 2021-05-19 Plessey Semiconductors Ltd LED precursor including a passivation layer
DE102019117207A1 (de) * 2019-06-26 2020-12-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips
JP2020010056A (ja) * 2019-09-11 2020-01-16 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 半導体発光部品
DE102020106113A1 (de) * 2020-03-06 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterkörper, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterkörpers
CN111446335B (zh) * 2020-03-24 2021-12-14 京东方科技集团股份有限公司 一种发光二极管及其制备方法
KR20210147158A (ko) * 2020-05-27 2021-12-07 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법, 발광 소자를 포함한 잉크 조성물 및 장치
KR20210156624A (ko) * 2020-06-18 2021-12-27 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법
KR102870852B1 (ko) 2020-06-24 2025-10-13 삼성전자주식회사 반도체 발광 소자
EP3950045B1 (en) * 2020-08-04 2025-01-01 Heraeus Medevio GmbH & Co. KG Ring electrode for a medical device
KR102841608B1 (ko) * 2020-08-13 2025-08-01 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
CN114744092B (zh) * 2021-01-08 2025-04-18 鑫天虹(厦门)科技有限公司 减少非辐射复合的微发光二极体的制作方法及制作机台
KR20230013705A (ko) 2021-07-19 2023-01-27 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
KR20230043296A (ko) * 2021-09-23 2023-03-31 삼성디스플레이 주식회사 표시 장치 및 발광 소자의 제조 방법
EP4473586A4 (en) * 2022-01-31 2025-11-19 Jade Bird Display Shanghai Ltd MICRO-LED, MICRO-LED ARIDMAID PANEL AND ITS MANUFACTURING PROCESS

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157653A (zh) * 2010-02-11 2011-08-17 Lg伊诺特有限公司 发光器件和具有发光器件的发光器件封装

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02250380A (ja) * 1989-03-23 1990-10-08 Nec Corp 半導体発光ダイオード
JP2655943B2 (ja) * 1991-02-28 1997-09-24 シャープ株式会社 半導体発光素子及びその製造方法
JP3150011B2 (ja) * 1993-07-20 2001-03-26 シャープ株式会社 半導体発光素子およびその製造方法
JPH11168259A (ja) 1997-12-05 1999-06-22 Sony Corp 半導体装置及びその製造方法
JP3797798B2 (ja) 1997-12-11 2006-07-19 三菱化学株式会社 半導体発光素子の製造方法
JP2004288729A (ja) * 2003-03-19 2004-10-14 Shin Etsu Handotai Co Ltd 発光素子及び発光素子の製造方法
JP3838218B2 (ja) * 2003-05-19 2006-10-25 ソニー株式会社 面発光型半導体レーザ素子及びその製造方法
US20050187984A1 (en) * 2004-02-20 2005-08-25 Tianlong Chen Data driven database management system and method
JP4725128B2 (ja) * 2005-02-18 2011-07-13 ソニー株式会社 半導体発光素子およびその製造方法、並びに光学モジュール

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157653A (zh) * 2010-02-11 2011-08-17 Lg伊诺特有限公司 发光器件和具有发光器件的发光器件封装

Also Published As

Publication number Publication date
JP2013110374A (ja) 2013-06-06
US9455373B2 (en) 2016-09-27
CN103078038A (zh) 2013-05-01
JP6035736B2 (ja) 2016-11-30
US20130105836A1 (en) 2013-05-02

Similar Documents

Publication Publication Date Title
CN103078038B (zh) 发光元件、制造发光元件的方法以及发光装置
CN105190917B (zh) 纳米结构半导体发光元件
CN105009309B (zh) 制造纳米结构半导体发光器件的方法
CN101771120B (zh) 半导体发光元件
TWI493750B (zh) Light emitting element
US20150364642A1 (en) Method for manufacturing nano-structured semiconductor light-emitting element
US12046700B2 (en) Nanorod light emitting device and method of manufacturing the same
CN105765741B (zh) 纳米结构半导体发光器件
JP5407359B2 (ja) 発光ダイオード
JPH10214996A (ja) 半導体発光素子及びその製造方法
JP2009260350A (ja) 酸化亜鉛系発光ダイオード｛ＺｉｎｃＯｘｉｄｅＬｉｇｈｔＥｍｉｔｔｉｎｇＤｉｏｄｅ｝
CN102084560A (zh) 氮化物半导体激光元件
TWI597863B (zh) 發光元件及其製造方法
US11870008B2 (en) Nanorod light-emitting device and method of manufacturing the same
JP5455852B2 (ja) 化合物系半導体発光素子およびその製造方法
JP6153351B2 (ja) 半導体発光装置
JP2007184585A (ja) 半導体発光素子及びその製造方法
JP2015056652A (ja) 窒化物半導体発光装置
JP2007324578A (ja) 集積型半導体発光装置およびその製造方法
TWI619267B (zh) 發光元件及其製造方法
TWI642205B (zh) 發光元件及其製造方法
JP2008159664A (ja) 半導体発光素子
KR101243741B1 (ko) 반도체 발광소자
JP2001185817A (ja) 窒化物系半導体および半導体素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170811

CF01 Termination of patent right due to non-payment of annual fee