CN103077960B - Trench power device structure and manufacture method thereof - Google Patents
Trench power device structure and manufacture method thereof Download PDFInfo
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- CN103077960B CN103077960B CN201310032234.XA CN201310032234A CN103077960B CN 103077960 B CN103077960 B CN 103077960B CN 201310032234 A CN201310032234 A CN 201310032234A CN 103077960 B CN103077960 B CN 103077960B
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Abstract
The invention discloses a kind of trench power device structure and manufacture method thereof, trench power device structure includes source region and terminal two parts, active area and terminal are all positioned on a substrate, active area comprises tagma, source region, contact hole, active area groove, first separator, source metal, terminal comprises terminal trenches, second separator, barrier layer, gate metal layer, contact hole is between tagma and source region, first separator is positioned at the top of active area groove, source metal is positioned at the top in tagma, the top in source region, the top of the first separator, the top of the second separator part, second separator is positioned at the top of terminal trenches, barrier layer is positioned at terminal trenches and peripheral, gate metal layer is positioned at the top of second separator another part.Technique of the present invention is simple, and with low cost, take size few, withstand voltage accommodation is wide, little and stable performance of leaking electricity.
Description
Technical field
The present invention relates to a kind of semiconductor device structure and manufacture method thereof, particularly relate to a kind of trench power device structure and manufacture method thereof.
Background technology
Metal oxide semiconductor field effect tube (MOSFET), igbt (IGBT) and super barrier diode (SBD) etc. are several of paramount importance power devices.At industrial electronic, there is their ample scope for abilities in household electrical appliances industry and all fields of consumer electronics.Switching power circuit, all be unable to do without their figure in rectification circuit and drive circuit.Power device requires forward big current, oppositely large voltage.Since power device is invented, improve its reverse voltage endurance capability and just become an important topic.
The voltage endurance capability of power device is made up of two parts: one is that active area is withstand voltage, and two is that terminal is withstand voltage, and wherein either party is not withstand voltage, just can not meet the demands.The problem of withstand voltage of active area is relatively simple, as long as select suitable material and technology just can realize.And terminal is withstand voltage quite different, it is not only relevant with materials and process, also relevant with the terminal structure of device, so need to do special processing.As shown in Figure 1, for not doing the terminal structure of any improvement, because the first equipotential surface 20 bends, electric field collects, and raises internal field, causes withstand voltage reduction, easily punctures.So just occurred that a lot of new construction is to improve terminal voltage endurance capability, such as: LOCOS structure, potential dividing ring structure, field plate structure, groove isolation construction and several combining structures etc.Modified node method mentioned above, its basic ideas increase equipotential surface radius of curvature nothing more than, to reach the effect reducing surface field or knot electric field.
Nowadays, people take above-described terminal structure or wherein several combining structures, design many satisfactory power devices, but generally speaking, each terminal structure has its weak point.The present invention elaborates for potential dividing ring structure, and the weak point of all the other structures no longer elaborates.Fig. 2 provides a kind of potential dividing ring structure, the basic thought of potential dividing ring structure is also that terminal increases one or more P region and makes the second equipotential surface 21 extension, increase equipotential surface radius of curvature, dispersion electric field improves withstand voltage object to reach, but its shortcoming is also obvious, mainly contain following some: one is that technique is comparatively complicated, and cost is higher, at least needs five pieces of reticle just can produce complete MOSFET or IGBT; Two is take size greatly, such as makes the terminal size that a 30V device needs more than 40um; Three is that size needs to adjust according to withstand voltage height, and such as 30V device needs the terminal size of 40um, and 1200V just needs the terminal size of more than 400um; Four is that leakage current is large; Five is easily be affected by the external environment, and the change of external environment can cause the change of device performance, so can not ensure consistency and the stability of device performance.
Summary of the invention
Because the above-mentioned defect of prior art, technical problem to be solved by this invention is to provide a kind of trench power device structure and manufacture method thereof, and its technique is simple, and with low cost, take size few, withstand voltage accommodation is wide, little and stable performance of leaking electricity.
For achieving the above object, the invention provides a kind of trench power device structure, it is characterized in that, described trench power device structure includes source region and terminal two parts, active area and terminal are all positioned on a substrate, active area comprises tagma, source region, contact hole, active area groove, first separator, source metal, terminal comprises terminal trenches, second separator, barrier layer, gate metal layer, contact hole is between tagma and source region, first separator is positioned at the top of active area groove, source metal is positioned at the top in tagma, the top in source region, the top of the first separator, the top of the second separator part, second separator is positioned at the top of terminal trenches, barrier layer is positioned at terminal trenches and peripheral, gate metal layer is positioned at the top except source metal cover part on the second separator, the shape of described trench power device structure is bar shaped or polygon.
The present invention also provides a kind of manufacture method of trench power device structure, and described manufacture method comprises the following steps: step one, and on substrate, deposit or the hard mask of heat growth, be formed with source region groove and terminal trenches by photoetching and etching technics; Step 2, wet method or dry method remove hard mask completely, and in the groove of active area and periphery, terminal trenches and periphery is deposit or heat growth one deck barrier layer all; Step 3, second layer photoetching, to open active area, all etches away the barrier layer of active area by wet method or dry method, retain the barrier layer of terminal; Step 4, active area trench fill first grid oxygen and the polysilicon as grid conducting material, fill second gate oxygen and the polysilicon as grid conducting material in terminal trenches; Step 5, by ion implantation and in formation tagma, active area after advancing, also advanced the source region activated and be formed with source region by ion implantation, the barrier layer that termination environment is formed by step 3 is as sheltering; Step 6, in the groove of active area and periphery forms the first separator, and in terminal trenches and periphery forms the second separator, a formation contact hole between the first separator and the second separator; Step 7, the top in the top of the first separator, the top in tagma, source region, the disposed thereon layer of metal layer of the second separator, defined by the 4th reticle and etched, and forms source metal and gate metal.
Preferably, the material layer of described hard mask to be thickness be 2000 dust-20000 dusts.
Preferably, described step one is first carried out ground floor photoetching and is formed with the figure of source region groove and the figure of terminal trenches, and hard mask wet method or dry etching are to substrate surface, and trench dry etches, all round and smooth etching in the bottom of active area groove and the bottom of terminal trenches.
Preferably, described first grid oxygen and second gate oxygen are all formed by thermal oxidation technology, polysilicon in the groove of active area and the polysilicon in terminal trenches are all formed by deposit, and are deposited to the surface level position of source region groove and the surface level position of terminal trenches.
Preferably, the thickness of described first grid oxygen is all the same with the thickness of second gate oxygen, is all 50 dust-3000 dusts.
Preferably, the oxide layer of the first separator of described step 6 and the second separator to be all deposit or hot long thickness be 2000 dust-20000 dusts is formed, by third layer photoetching formed contact hole, wet method or dry etching separator to substrate surface, dry etching substrate 0.3um-1um.
The invention has the beneficial effects as follows: one, technique is simple, and cost is low, only use four pieces of reticle and just can complete MOSFET and IGBT making.Two, terminal size is little.Be illustrated in figure 3 30VNMOSTFS (TrenchFieldStop, groove field end) terminal graph, it is withstand voltage that the terminal of 10um just can realize 30V, and conventional art will realize equal performance, size is at least 40um, so TFS technology only accounts for traditional 1/4, even can accomplish less.Three, leak electricity little.As shown in Figure 4, lines are above the puncture voltage curve of the 30VMOSFET of conventional terminal Structure Calculation, lines be below TFS puncture curve.Obviously find out from figure, under the same terms, low at least one the order of magnitude of electric leakage of TFS structural rate traditional structure.Four, voltage endurance capability is stronger, and as shown in Figure 4, under the same terms, conventional art punctures at 34V, and TFS to 40V punctures.Five, unfailing performance is good, because stopping electric field is horizontal vertical trench, has nothing to do, so do not need to do passivation protection just can realize high reliability with surface charge.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing terminal structure.
Fig. 2 is the structural representation of existing potential dividing ring structure.
Fig. 3 is the schematic diagram of terminal size in groove power device of the present invention.
Fig. 4 is the schematic diagram of leakage experiment in groove power device of the present invention.
Fig. 5 is the structural representation of groove power device of the present invention.
Fig. 6 is the profile in the B-B direction along Fig. 5.
Fig. 7 is the schematic diagram that the present invention forms source region groove and terminal trenches.
Fig. 8 is the schematic diagram that the present invention forms barrier layer.
Fig. 9 is the schematic diagram that the present invention etches away the barrier layer of active area.
Figure 10 is the schematic diagram that the present invention fills first grid oxygen and polysilicon.
Figure 11 is the schematic diagram that the present invention forms tagma and source region.
Figure 12 is the schematic diagram that the present invention forms the first separator and the second separator.
Figure 13 is the profile in the A-A direction along Fig. 5, for the present invention forms the schematic diagram of source metal and gate metal layer.
Embodiment
Be described further below with reference to the technique effect of accompanying drawing to design of the present invention, concrete structure and generation, to understand object of the present invention, characteristic sum effect fully.
As Fig. 5, Fig. 6, shown in Figure 13, groove power device of the present invention includes source region and terminal two parts (for a kind of power device MOSFET), active area and terminal are all positioned on a substrate, active area comprises tagma, source region, contact hole, active area groove, first separator, source metal, terminal comprises terminal trenches, second separator, barrier layer, gate metal layer, contact hole is between tagma and source region, first separator is positioned at the top of active area groove, source metal is positioned at the top in tagma, the top in source region, the top of the first separator, the top of the second separator part, second separator is positioned at the top of terminal trenches, barrier layer is positioned at terminal trenches and peripheral, gate metal layer is positioned at the top of second separator another part, specifically the second separator removes the top of source metal cover part.The shape of trench power device structure of the present invention can be bar shaped or polygon etc., and can change to arbitrary shape as required, the present invention lists a kind of quadrilateral structure.
Groove power device active area of the present invention can with reference to traditional structure, four edges is formed with the source region groove of one fixed width, the inside heat growth one deck grid oxygen also fills the electric conducting material of polysilicon as grid, the silicon materials surface that groove surrounds forms tagma and source region respectively and also then forms separator, finally forms contact hole and metal electrode layer.Terminal is different from the past all structures, realize the perfect adaptation of trench isolation techniques and barrier technology, terminal electric field is ended at inside terminal trenches, thus avoid electric field and extend to terminal, play the effect improving puncture voltage, concrete forming process is: first formed terminal trenches and within it and peripheral deposit or heat growth one deck barrier layer to stop the existence in this region of follow-up tagma and source region, then the electric conducting material of polysilicon as grid is filled with active area synchronous growth one deck grid oxygen, then separator is formed, finally form contact hole and metal electrode layer.As can be seen from the above, core concept of the present invention electric field is ended at by formation terminal trenches and barrier layer and is made equipotential surface perpendicular to inside terminal trenches dexterously, there is not electric field in the region beyond terminal trenches, so terminal electric field is just close to uniform electric field, thus evaded the intensive phenomenon of terminal electric field shown in Fig. 1, reach and improve withstand voltage object.
The manufacture method (for a kind of power device MOSFET) of trench power device structure of the present invention comprises the following steps:
Step one, as shown in Figure 7, deposit or hot growth thickness are that the material layer (such as oxide or nitride etc.) of 2000 dust-20000 dusts is as hard mask 2 on the substrate 1, source region groove 3 and terminal trenches 4 is formed by photoetching and etching technics, first carry out ground floor photoetching specifically and be formed with the figure of source region groove and the figure of terminal trenches, hard mask wet method or dry etching are to substrate surface, trench dry etches, all round and smooth etching in the bottom of active area groove and the bottom of terminal trenches;
Step 2, as shown in Figure 8, wet method or dry method remove hard mask completely, in in active area groove 3 and periphery, terminal trenches 4 and periphery all deposit or heat growth one deck barrier layer (such as oxide or nitride etc.) 5, namely active area and terminal have barrier layer, and the thickness on barrier layer 5 is 2000 dust-20000 dusts;
Step 3, as shown in Figure 9, second layer photoetching, to open active area, all etches away the barrier layer of active area by wet method or dry method, retains the barrier layer of terminal;
Step 4, as depicted in figure 10 and figure 13, source region groove 3 fills first grid oxygen 31 and the electric conducting material of polysilicon 6 as grid, fills second gate oxygen 41 and the electric conducting material of polysilicon 7 as grid in terminal trenches 4; First grid oxygen and second gate oxygen are all formed by hot growth technique specifically, and polysilicon is that deposit is formed and is deposited to the surface level position of source region groove, the surface level position of terminal trenches.The thickness of first grid oxygen is all the same with the thickness of second gate oxygen, is all 50 dust-3000 dusts.
Step 5, as shown in figure 11, active area is formed tagma 8 and source region 9, concrete forming process is different because properties of product are different, and difference is larger.The formation in tagma generally adopts the 3rd main group element to provide hole, and such as boron injects, and then thermal process advances and forms suitable region branch; The formation in source region generally adopts the 5th main group element to provide electron source, and such as phosphorus or arsenic inject, and then thermal process advances the region branch making formation suitable.A word in a word, and the traditional handicraft of industry is similar, according to the suitable adjusting process condition of different components performance requirement.The process that tagma and source region are injected, active area is thin barrier layer, and terminal is thick barrier layer, so tagma and source region are only present in active area, and is not present in terminal.
Step 6, as shown in figure 12, in active area groove 3 and periphery forms the first separator 10, and in terminal trenches 4 and periphery forms a formation contact hole 12 between the second separator 11, first separator 10 and the second separator 11.The oxide layer of the first separator and the second separator to be all deposit or hot long thickness be 2000 dust-20000 dusts is formed, and forms contact hole by third layer photoetching, wet method or dry etching separator to substrate surface, dry etching substrate 0.3um-1um.
Step 7, as shown in fig 6 and fig 13, the top in the top of the first separator 10, the top in tagma 8, source region 9, disposed thereon one deck source metal 13 of the second separator 11 and one deck gate metal layer 14, complete the manufacture of trench power device structure of the present invention.Evaporation or sputtering 1um-5um metal level are as electrode layer specifically, the 4th layer photoetching version definition grid, source region, by wet method or dry method, source metal and gate metal layer are opened quarter.
Present invention employs the special effects in existing semiconductor process techniques and technique, to understand the forming process of structure of the present invention better.First, make use of the load effect of etching groove when etching groove, so-called load effect, simply say that etching depth is also different caused by size difference when etching groove, what size was large carves deeply, the quarter that size is little shallow.Make use of this etching load effect in the present invention just to have a mind to make peripheral terminal trenches etch more deeply, the active groove in active area etches more shallow.The degree of depth needs of the terminal trenches that periphery is done are greater than knot depletion depth or width is greater than knot depletion widths, so just can better block electric field.Secondly, the self-registered technology in semiconductor is make use of in the process forming tagma and source region, so-called autoregistration, simply say to be exactly do not need photoetching contraposition to identify, the figure of front layer directly determines rear layer pattern, and after that is ensureing under the prerequisite of not adding reticle, the figure of layer is identical with front layer, and behind the region that front layer pattern exists, layer also exists, behind the non-existent region of front layer pattern, layer does not also exist, or just the opposite with it.Formation tagma and source region all make use of this self-registered technology in the present invention, from isolated groove (comprising groove itself) outward (the B-B region as Fig. 5), grown the separator that one deck is very thick, separation layer thickness is as the criterion can stop that follow-up body injection and source are injected, cause the region that body injects, the region that source is injected all ends at the inner side by terminal trenches, electric field is only present in the inner side by terminal trenches thus, and can not toward extension, add that P-N is perpendicular to terminal trenches sidewall and form parallel electric field, also just there is not the phenomenons such as electric field collects, reach the object improving voltage endurance capability, this barrier layer is not merely in order to baffle element in fact, the injection in source, a prior object is also had to be prevent puncturing of channel bottom, this is because channel bottom, particularly the electric field of the corner of bottom is very intensive, easily cause and puncture, serious meeting causes the permanent destruction of separator in groove, this point is that semiconductor power device is not allowed, if barrier layer adds thickness, then effectively can avoid the generation of above thing.
The technique of trench power device structure of the present invention and manufacture method thereof is simple, and with low cost, take size few, withstand voltage accommodation is wide, and little and stable performance of leaking electricity, may be used for any one in MOSFET, IGBT, SBD.Trench power device structure of the present invention and manufacture method thereof obtain following effect: one, technique is simple, and cost is low.Only use 4 pieces of reticle and just can complete MOSFET and IGBT making.Two, terminal size is little.Be illustrated in figure 3 30VNMOSTFS terminal graph, it is withstand voltage that the terminal of 10um just can realize 30V, and conventional art will realize equal performance, and size is at least 40um, so TFS technology only accounts for only account for traditional 1/4, even can accomplish less.Three, leak electricity little.As shown in Figure 4, lines are above the puncture voltage curve of the 30VMOSFET of conventional terminal Structure Calculation, lines be below TFS puncture curve.Obviously find out from figure, under the same terms, low at least one the order of magnitude of electric leakage of TFS structural rate traditional structure.Four, voltage endurance capability is stronger, and as shown in Figure 4, under the same terms, conventional art punctures at 34V, and TFS to 40V punctures.Five, unfailing performance is good, because stopping electric field is horizontal vertical trench, has nothing to do, so do not need to do passivation protection just can realize high reliability with surface charge.
More than describe preferred embodiment of the present invention in detail.Should be appreciated that those of ordinary skill in the art just design according to the present invention can make many modifications and variations without the need to creative work.Therefore, all technical staff in the art, all should by the determined protection range of claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (7)
1. a trench power device structure, it is characterized in that, described trench power device structure includes source region and terminal two parts, active area and terminal are all positioned on a substrate, active area comprises tagma, source region, contact hole, active area groove, first separator, source metal, terminal comprises terminal trenches, second separator, barrier layer, gate metal layer, contact hole is between tagma and source region, first separator is positioned at the top of active area groove, source metal is positioned at the top in tagma, the top in source region, the top of the first separator, the top of the second separator part, second separator is positioned at the top of terminal trenches, barrier layer is positioned at terminal trenches and peripheral, gate metal layer is positioned at the top except source metal cover part on the second separator, the shape of described trench power device structure is bar shaped or polygon.
2. a manufacture method for trench power device structure, is characterized in that, described manufacture method comprises the following steps: step one, and on substrate, deposit or the hard mask of heat growth, be formed with source region groove and terminal trenches by photoetching and etching technics; Step 2, wet method or dry method remove hard mask completely, and in the groove of active area and periphery, terminal trenches and periphery is deposit or heat growth one deck barrier layer all; Step 3, second layer photoetching, to open active area, all etches away the barrier layer of active area by wet method or dry method, retain the barrier layer of terminal; Step 4, active area trench fill first grid oxygen and the polysilicon as grid conducting material, fill second gate oxygen and the polysilicon as grid conducting material in terminal trenches; Step 5, by ion implantation and in formation tagma, active area after advancing, also advanced the source region activated and be formed with source region by ion implantation, the barrier layer that termination environment is formed by step 3 is as sheltering; Step 6, in the groove of active area and periphery forms the first separator, and in terminal trenches and periphery forms the second separator, a formation contact hole between the first separator and the second separator; Step 7, the top in the top of the first separator, the top in tagma, source region, the disposed thereon layer of metal layer of the second separator, defined by the 4th reticle and etched, and forms source metal and gate metal.
3. the manufacture method of trench power device structure as claimed in claim 2, is characterized in that, the material layer of described hard mask to be thickness be 2000 dust-20000 dusts.
4. the manufacture method of trench power device structure as claimed in claim 2, it is characterized in that, described step one is first carried out ground floor photoetching and is formed with the figure of source region groove and the figure of terminal trenches, hard mask wet method or dry etching are to substrate surface, trench dry etches, all round and smooth etching in the bottom of active area groove and the bottom of terminal trenches.
5. the manufacture method of trench power device structure as claimed in claim 2, it is characterized in that, described first grid oxygen and second gate oxygen are all formed by thermal oxidation technology, polysilicon in the groove of active area and the polysilicon in terminal trenches are all formed by deposit, and are deposited to the surface level position of source region groove and the surface level position of terminal trenches.
6. the manufacture method of trench power device structure as claimed in claim 2, it is characterized in that, the thickness of described first grid oxygen is all the same with the thickness of second gate oxygen, is all 50 dust-3000 dusts.
7. the manufacture method of trench power device structure as claimed in claim 2, it is characterized in that, the oxide layer of the first separator of described step 6 and the second separator to be all deposit or hot long thickness be 2000 dust-20000 dusts is formed, contact hole is formed by third layer photoetching, wet method or dry etching separator to substrate surface, dry etching substrate 0.3um-1um.
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| CN105609554A (en) * | 2014-11-19 | 2016-05-25 | 常州旺童半导体科技有限公司 | Trenched power device structure and manufacturing method thereof |
| CN106298969B (en) * | 2015-06-26 | 2019-11-08 | 北大方正集团有限公司 | The processing method and super barrier diode of super barrier diode |
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| CN102034712A (en) * | 2009-09-23 | 2011-04-27 | 万国半导体股份有限公司 | Direct contact in trench with three-mask shield gate process |
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| GB0122121D0 (en) * | 2001-09-13 | 2001-10-31 | Koninkl Philips Electronics Nv | Edge termination in a trench-gate mosfet |
| US20110254071A1 (en) * | 2009-11-20 | 2011-10-20 | Force Mos Technology Co. Ltd. | Shielded trench mosfet with multiple trenched floating gates as termination |
| TWI426568B (en) * | 2010-03-29 | 2014-02-11 | Sinopower Semiconductor Inc | Semiconductor power device and manufacturing method thereof |
| US8362550B2 (en) * | 2011-01-20 | 2013-01-29 | Fairchild Semiconductor Corporation | Trench power MOSFET with reduced on-resistance |
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| US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
| CN101997030A (en) * | 2009-08-17 | 2011-03-30 | 力士科技股份有限公司 | Trench metal-oxide-semiconductor field effect transistor (MOSFET) with shallow trench structure and manufacturing method thereof |
| CN102034712A (en) * | 2009-09-23 | 2011-04-27 | 万国半导体股份有限公司 | Direct contact in trench with three-mask shield gate process |
| CN102222618A (en) * | 2010-04-16 | 2011-10-19 | 力士科技股份有限公司 | Trench metal oxide semiconductor field effect tube |
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