CN103050544A - Bottom-gate thin film transistor and preparation method thereof - Google Patents
Bottom-gate thin film transistor and preparation method thereof Download PDFInfo
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- CN103050544A CN103050544A CN2013100183883A CN201310018388A CN103050544A CN 103050544 A CN103050544 A CN 103050544A CN 2013100183883 A CN2013100183883 A CN 2013100183883A CN 201310018388 A CN201310018388 A CN 201310018388A CN 103050544 A CN103050544 A CN 103050544A
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Abstract
The invention discloses a bottom-gate thin film transistor and a preparation method thereof. According to the invention, the thin film transistor is prepared on a glass or plastic substrate, and a gallium-doped zinc oxide semiconductor material is taken as a conductive channel layer of a transparent semiconductor; and according to a special process adopted in the preparation process, an appropriate amount of oxygen is added, so that the gallium-doped zinc oxide presents a semi-conductor property and a high migration property, and the performance of the thin film transistor is effectively improved. The preparation method is simple in step and low in preparation cost, has a positive effect on improving the performance of the thin film transistor device, improves the device performance and lowers the preparation cost. At the same time, a gallium-doped zinc oxide film is an environment-friendly material, the process is simple, the preparation cost is low, and thus the bottom-gate thin film transistor and the preparation method thereof have wide application prospect.
Description
Technical field
The invention belongs to the flat panel display field, be specifically related to a kind of bottom gate thin film transistor on glass substrate or plastic and preparation method thereof.
Background technology
Semiconductor industry is the pillar industry of current informationized society, amplifies and the transistor of on-off action has very consequence and wherein rise.Transistor is from the history in existing more than 80 year of amorphous silicon film transistor of initial simple junction type and till now extensive industrialization of point-contact transistor.Though the CdS of the 60 to 70's of 20th century exploitation, CdSe thin-film transistor obtain to use at active-matrix liquid crystal display AMLCD, because the unstable and high cost of manufacture of sulfide active layer does not have to obtain to have the breakthrough of industry meaning.The metal-oxide semiconductor transistor MOSFET take silicon-based transistor as representative of exploitation has greatly promoted the particularly industrialization process of active-matrix liquid crystal display of flat-panel monitor after a while.
Traditional handicraft is used the amorphous silicon film transistor technology, afterwards, researchs and develops again the polysilicon technology.But amorphous silicon film transistor technique manifests its limitation gradually, mainly is low mobility and opacity.The former has limited the response speed of device, and latter reduces the aperture opening ratio of device.Another outstanding problem of amorphous silicon transistor is band gap little (1.17eV), needs black matrix to come the block visible light irradiation, in order to avoid produce extra photo-generated carrier, this has just increased complexity and the cost of technique.The polysilicon technology is again because the very difficult practical application of factor such as preparation temperature height, complex process, large-area uniformity be poor, and the development of Display Technique has run into bottleneck.Recently developed again a kind of novel thin film transistor technology based on Zinc oxide-base.
ZnO is broad stopband II-VI family semiconductor, mainly with the polar covalent bond combination, is wurtzite structure between atom, and energy gap is about 3.37eV, reaches more than 80% at the light transmittance of visible region, can be used for the all-transparent display; Secondly, the mobility of Zinc oxide-base TFT is generally than the high order of magnitude of traditional non-crystalline silicon tft, and current driving ability stronger (I ∝ μ W/L) is more suitable for be used to driving active light emitting diode (LED) display screen AMOLED.In addition, it at room temperature can pass through magnetron sputtering Large-Area-Uniform film forming, therefore can be used for flexible display.Because the superior electrical performance that Zinc oxide based film transistor TFT displays and comparatively simple preparation condition, TFT compares with silicon-based film transistor, and Zinc oxide-base TFT relatively is fit to be applied to New Type Display Devices.
At present, have much about the research of Zinc oxide based semiconductor thin-film material, such as zinc-gallium oxide ZnO+Ga
2O
3, zinc oxide aluminum ZnO+Al
2O
3, indium zinc oxide ZnO+In
2O
3, cadmium-zinc oxide ZnO+Gd
2O
3, magnesium zinc ZnO+MgO, indium zinc oxide gallium (Indium Gallium Zinc Oxide, IGZO) etc.Wherein, IGZO is present most popular transparent semiconductor material, yet because the In in the material is rare element, content is rare and poisonous in the earth, makes this height and not environmental protection, therefore is difficult to application in extensive giving birth to.Zinc-gallium oxide ZnO+Ga
2O
3Also rarer people's research, and zinc-gallium oxide is treated as transparent conductive material research usually.
Summary of the invention
For problems of the prior art, the present invention is proposed.
One object of the present invention is to provide a kind of thin-film transistor.
Thin-film transistor of the present invention comprises: substrate, gate electrode, gate dielectric layer, channel layer, source electrode and drain electrode, wherein, form gate electrode at substrate, form gate dielectric layer at gate electrode, form channel layer at gate dielectric layer, and forming respectively source electrode and drain electrode at the two ends of channel layer, the material of channel layer adopts the zinc oxide semiconductor material of mixing gallium, wherein the content of gallium is 1% ~ 10%(quality).
The material of substrate is transparent glass or flexible plastics.
The material of gate electrode is the transparent electric conducting material of tin indium oxide ITO or zinc-gallium oxide GZO etc.
The material of gate dielectric layer adopts the insulating material of silicon dioxide or silicon nitride etc.
Source electrode and the very transparent electric conducting material of tin indium oxide ITO or zinc-gallium oxide GZO etc. that leaks electricity.
Another object of the present invention is to provide a kind of preparation method of thin-film transistor.
The preparation method of thin-film transistor of the present invention may further comprise the steps:
1) at the conductive film of the Grown layer of transparent of glass or plastics, chemical wet etching forms gate electrode;
2) and then the grow gate dielectric material of one deck insulation, chemical wet etching forms gate dielectric layer;
3) mix the zinc oxide semiconductor material of gallium at gate dielectric layer growth one deck, and pass into an amount of oxygen, chemical wet etching forms channel layer;
4) growth layer of conductive film, chemical wet etching forms source electrode and drain electrode;
5) growth one deck passivation dielectric layer, photoetching and etching form the fairlead of gate electrode, source electrode and drain electrode;
6) growth layer of metal film, photoetching and etching form metal electrode and interconnection.
Wherein, in step 1), the conductive film that the formation gate electrode is grown adopts the transparent electric conducting material of tin indium oxide ITO or zinc-gallium oxide GZO etc.
In step 2) in, the gate dielectric material that the formation gate dielectric layer is grown adopts the insulating material of silicon dioxide or silicon nitride etc.
In step 3), the zinc oxide semiconductor material that utilizes sputtering technology growth one deck to mix gallium forms channel layer, and adds 5% ~ 25%(gas flow in sputter procedure) an amount of oxygen; The target that sputter is used is the zinc-oxide ceramic target of mixing gallium, and wherein the content of gallium is 1% ~ 10%(quality).
In step 4), the conductive film that formation source electrode and drain electrode are grown adopts the transparent electric conducting material of tin indium oxide ITO or zinc-gallium oxide GZO etc.
Beneficial effect of the present invention:
The invention provides a kind of preparation method who prepares thin-film transistor at the substrate of glass or plastics, employing is mixed the zinc oxide semiconductor material of gallium as the channel layer of transparent semiconductor conduction, adopting Particular craft to add an amount of oxygen in preparation process makes the zinc oxide of mixing gallium present characteristic of semiconductor, and demonstrate high migrate attribute, effectively raise the performance of thin-film transistor.Preparation method's step of the present invention is simple, and preparation cost is low, and the performance that improves film transistor device is had good effect, has improved device performance, has reduced preparation cost.Simultaneously, the zinc-gallium oxide film is environment-friendly materials, and technique is simple, and preparation cost is low, is applicable to transparent demonstration and flexible display technologies, is with a wide range of applications.
Description of drawings
Fig. 1 is the profile of thin-film transistor of the present invention;
Fig. 2 is the vertical view of thin-film transistor of the present invention;
Fig. 3 (a)～(e) shows the preparation method's of the thin-film transistor of the present invention main technological steps of an embodiment successively, wherein, (a) be the structural representation of substrate, (b) for forming the processing step of gate electrode, (c) for forming the processing step of gate dielectric layer, (d) for forming the processing step of channel layer, (e) be the processing step of formation source electrode and drain electrode.
Embodiment
Below in conjunction with accompanying drawing, by specific embodiment, further set forth the present invention.
As depicted in figs. 1 and 2, thin-film transistor of the present invention comprises: substrate 1, gate electrode 2, gate dielectric layer 3, channel layer 4, source electrode and drain electrode 5, wherein, form gate electrode 2 at substrate 1, form gate dielectric layer 3 at gate electrode 2, form channel layer 4 at gate dielectric layer 3, and form respectively source electrode and drain electrode 5 at the two ends of channel layer 4.
An embodiment of the preparation manufacture method of thin-film transistor of the present invention, be may further comprise the steps to shown in Fig. 3 (e) by Fig. 3 (a):
1) adopt transparent glass or plastics as substrate 1, shown in Fig. 3 (a), adopt the conductive film of the ITO of magnetron sputtering technique growth one deck 10 ~ 100 nanometer thickness at substrate 1, then chemical wet etching goes out gate electrode 2, shown in Fig. 3 (b);
2) utilize the gate dielectric material of the silicon dioxide of plasma enhanced chemical vapor deposition method PECVD growth one deck 50～200 nanometer thickness, then chemical wet etching forms gate dielectric layer 3, shown in Fig. 3 (c);
3) utilize sputtering technology growth one deck to mix the zinc oxide semiconductor material of gallium, add the oxygen of 5%-25% in the sputter procedure, chemical wet etching forms channel layer 4, and the target that sputter is used is the zinc-oxide ceramic target of mixing gallium, the content of gallium is 1%-10%, shown in figure (d);
4) conductive film of the ITO of employing magnetron sputtering technique growth one deck 20 ~ 300 nanometer thickness, then chemical wet etching forms source electrode and drain electrode 5, shown in figure (e);
5) according to standard technology growth one deck passivation dielectric layer, photoetching and etching form the fairlead of gate electrode, source electrode and drain electrode;
6) metallic film of growth one deck Al or transparent conduction, photoetching and etching form electrode and interconnection.
It should be noted that at last the purpose of publicizing and implementing example is to help further to understand the present invention, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various substitutions and modifications all are possible.Therefore, the present invention should not be limited to the disclosed content of embodiment, and the scope of protection of present invention is as the criterion with the scope that claims define.
Claims (10)
1. thin-film transistor, it is characterized in that, described thin-film transistor comprises: substrate (1), gate electrode (2), gate dielectric layer (3), channel layer (4), source electrode and drain electrode (5), wherein, form described gate electrode (2) at described substrate (1), form described gate dielectric layer (3) at described gate electrode (2), form described channel layer (4) at described gate dielectric layer (3), and form respectively described source electrode and drain electrode (5) at the two ends of described channel layer (4), the material of described channel layer (4) adopts the zinc oxide semiconductor material of mixing gallium, and wherein the content of gallium is 1% ~ 10%(quality).
2. thin-film transistor as claimed in claim 1 is characterized in that, the material of described substrate is transparent glass or flexible plastics.
3. thin-film transistor as claimed in claim 1 is characterized in that, the material of described gate electrode is the transparent electric conducting material of tin indium oxide ITO or zinc-gallium oxide GZO etc.
4. thin-film transistor as claimed in claim 1 is characterized in that, the material of described gate dielectric layer adopts the insulating material of silicon dioxide or silicon nitride etc.
5. thin-film transistor as claimed in claim 1 is characterized in that, described source electrode and the very transparent electric conducting material of tin indium oxide ITO or zinc-gallium oxide GZO etc. that leaks electricity.
6. the preparation method of a thin-film transistor is characterized in that, described preparation method may further comprise the steps:
1) at the conductive film of the Grown layer of transparent of glass or plastics, chemical wet etching forms gate electrode;
2) and then the grow gate dielectric material of one deck insulation, chemical wet etching forms gate dielectric layer;
3) mix the zinc oxide semiconductor material of gallium at gate dielectric layer growth one deck, and pass into an amount of oxygen, chemical wet etching forms channel layer;
4) growth layer of conductive film, chemical wet etching forms source electrode and drain electrode;
5) growth one deck passivation dielectric layer, photoetching and etching form the fairlead of gate electrode, source electrode and drain electrode;
6) growth layer of metal film, photoetching and etching form metal electrode and interconnection.
7. preparation method as claimed in claim 6 is characterized in that, in step 1), forms the transparent electric conducting material that conductive film that described gate electrode grows adopts tin indium oxide ITO or zinc-gallium oxide GZO etc.
8. preparation method as claimed in claim 6 is characterized in that, in step 2) in, the insulating material that gate dielectric material that described gate dielectric layer grows adopts silicon dioxide or silicon nitride etc. formed.
9. preparation method as claimed in claim 6 is characterized in that, in step 3), the zinc oxide semiconductor material that utilizes sputtering technology growth one deck to mix gallium forms channel layer, and adds 5% ~ 25%(gas flow in sputter procedure) oxygen; The target that sputter is used is the zinc-oxide ceramic target of mixing gallium, and the content of gallium is 1% ~ 10%(quality).
10. preparation method as claimed in claim 6 is characterized in that, in step 4), the conductive film that formation source electrode and drain electrode are grown adopts the transparent electric conducting material of tin indium oxide ITO or zinc-gallium oxide GZO etc.
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| CN103337462A (en) * | 2013-06-13 | 2013-10-02 | 北京大学深圳研究生院 | Preparation method of thin film transistor |
| CN110021531A (en) * | 2019-03-25 | 2019-07-16 | 北海惠科光电技术有限公司 | Thin-film transistor array base-plate and preparation method thereof |
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| CN1564324A (en) * | 2004-03-31 | 2005-01-12 | 浙江大学 | ZnO based transparent thin film transistor and its prepn. method |
| CN101901787A (en) * | 2009-05-27 | 2010-12-01 | 乐金显示有限公司 | Oxide thin film transistor and method of fabricating the same |
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| CN103337462A (en) * | 2013-06-13 | 2013-10-02 | 北京大学深圳研究生院 | Preparation method of thin film transistor |
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Application publication date: 20130417 |