CN103049588B - 冗余图形的填充方法 - Google Patents

冗余图形的填充方法 Download PDF

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CN103049588B
CN103049588B CN201110312357.XA CN201110312357A CN103049588B CN 103049588 B CN103049588 B CN 103049588B CN 201110312357 A CN201110312357 A CN 201110312357A CN 103049588 B CN103049588 B CN 103049588B
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CN103049588A (zh
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陈福成
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
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    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/18—Manufacturability analysis or optimisation for manufacturability
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Abstract

本发明公开了一种冗余图形的填充方法，包括步骤：1)根据半导体器件中各层次的相互关系，计算出芯片上不可填充冗余图形区域与可填充冗余图形区域；2)以不可填充冗余图形区域的边界作为填充算法的起始边，环状填充冗余图形，每一次环状填充为填充算法的一个计算循环。该方法将不可填充区域的边界作为填充算法的起始边，环状插入冗余图形，如此，保证了在需要冗余图形保护的器件周围，优先插入冗余图形，从而得以更好地保证器件的良率。

Description

冗余图形的填充方法
技术领域
本发明涉及半导体集成电路领域，特别是涉及一种冗余图形的填充方法。
背景技术
在半导体集成电路制造中，化学机械研磨(CMP，ChemicalMechanicalPlanarization)和干法刻蚀工艺，都采用冗余图形填充方法(dummyinsertion)来改善面内均一性。
目前的冗余图形填充方法为：先根据器件的各层次间的关系，计算出冗余图形的可填充区域，然后对于可填充区域，从一个端点开始计算，插入冗余图形，直到达到可填充区域的边界。这种方法，在特定的一些位置，由于算法初始坐标的问题，会导致在局部符合填充规则的区域，也不能成功地填充冗余图形。例如图1所示，冗余图形是边长为a的正方形，两个冗余图形的间距为b；如图2所示，芯片中有一个区域为不可填充冗余图形的区域，这个区域的上边界与芯片的上边界的距离为a+2b，正好是一个冗余图形可以填充的距离，但是，能不能真正插入一个冗余图形，要受到冗余图形插入算法的计算初始点的影响，如果计算初始点不在该不可填充冗余图形区域的上边界(图2中计算初始点在芯片的左下角)，冗余图形就不能在这个边界正常插入，从而导致器件在需要冗余图形的区域得不到填充。
随着半导体器件的缩小和良率要求的提升，对硅片面内均匀性的要求也越来越高，上述冗余图形填充方法已越来越不能满足工艺的要求。
发明内容
本发明要解决的技术问题是提供一种冗余图形的填充方法，它可以提高半导体器件的良率。
为解决上述技术问题，本发明的冗余图形的填充方法，包括以下步骤：
1)根据半导体器件中各层次的相互关系，计算出芯片上不可填充冗余图形区域与可填充冗余图形区域；
2)以不可填充冗余图形区域的边界作为填充算法的起始边，环状填充冗余图形，每一次环状填充为填充算法的一个计算循环。
本发明的冗余图形填充方法，将芯片不可填充冗余图形区域的边界作为填充算法的起始边，环状填充冗余图形，保证了在需要冗余图形保护的器件周围，优先插入冗余图形，从而更好地保证了器件的良率。
附图说明
图1是冗余图形示意图；图中，冗余图形呈正方形，边长为a，两个冗余图形之间的距离为b。
图2是现有的冗余图形填充方法的示意图。
图3～4是本实施例的冗余图形填充方法示意图。
具体实施方式
为对本发明的技术内容、特点与功效有更具体的了解，现结合图示的实施方式，详述如下：
本发明的冗余图形填充方法，是将半导体芯片的不可填充冗余图形区域的边界作为填充算法的起始边，环状插入冗余图形，每一次环状填充为填充算法的一个计算循环。
以正方形冗余图形的填充为例，采用本发明的方法进行冗余图形填充的具体步骤如下：
1)根据半导体器件中各层次的相互关系，计算出半导体芯片上不可填充冗余图形区域与可填充冗余图形区域。
2)以不可填充冗余图形区域的边界作为起始边，在芯片上环状填充冗余图形，如图3所示。
首次填充时，若正对的两个不可填充冗余图形区域间只能填充一个冗余图形，则将冗余图形放在这两个不可填充冗余图形区域的中间；
当填充到第n(n为整数，且n＞1)次时，若正对的两个不可填充冗余图形区域间只能再填充一个冗余图形，则将冗余图形放在第n-1次所填充的两个冗余图形的中间，如图4所示。
步骤1)中，计算芯片的不可填充冗余图形的区域，以及步骤2)中进行冗余图形的填充，都可以通过EDA(ElectronicDesignAutomation，电子设计自动化)工具进行，例如Mentor的CalibreDRC(designrulecheck)工具。
上述冗余图形填充方法，保证了在需要冗余图形保护的器件周围，优先插入冗余图形，从而保证了半导体芯片图形密度的均一性，进而更好地保证了器件的良率。

Claims (2)

1.一种冗余图形的填充方法，其特征在于，包括以下步骤：
1)根据半导体器件中各层次的相互关系，计算出芯片上不可填充冗余图形区域与可填充冗余图形区域；
2)以不可填充冗余图形区域的边界作为填充算法的起始边，环状填充冗余图形，所述冗余图形呈正方形，每一次环状填充为填充算法的一个计算循环；首次填充时，若正对的两个不可填充冗余图形区域间只能填充一个冗余图形，则将冗余图形放在这两个不可填充冗余图形区域中间；后续填充时，若正对的两个不可填充冗余图形区域间只能再填充一个冗余图形，则将冗余图形放在前一次填充的两个冗余图形的中间。
2.根据权利要求1所述的方法，其特征在于，所述步骤1)中不可填充冗余图形区域的计算以及步骤2)中冗余图形的填充，通过电子设计自动化工具进行。
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US9104831B2 (en) * 2013-08-23 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor overlay production system and method
CN103514617A (zh) * 2013-10-18 2014-01-15 上海华力微电子有限公司 一种提高狭长区域冗余图形填充率的方法
CN104239612B (zh) * 2014-08-27 2020-06-09 上海华力微电子有限公司 改善激光退火热分布的方法
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CN106096087B (zh) * 2016-05-31 2019-08-13 上海华虹宏力半导体制造有限公司 占领图形填充方法
CN106597804B (zh) * 2016-11-30 2020-08-25 上海华力微电子有限公司 一种基于前层图形判别的离子注入层边界的光学临近修正方法
KR20230034364A (ko) 2020-11-09 2023-03-09 창신 메모리 테크놀로지즈 아이엔씨 집적 회로의 배치 방법 및 배치 장치
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