CN103035839A - Resistive random access memory and preparation method thereof - Google Patents
Resistive random access memory and preparation method thereof Download PDFInfo
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- CN103035839A CN103035839A CN2012105553416A CN201210555341A CN103035839A CN 103035839 A CN103035839 A CN 103035839A CN 2012105553416 A CN2012105553416 A CN 2012105553416A CN 201210555341 A CN201210555341 A CN 201210555341A CN 103035839 A CN103035839 A CN 103035839A
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Abstract
The invention discloses a resistive random access memory and preparation method thereof. The resistive random access memory is formed on a substrate and comprises a first electrode, a resistive material and a second electrode. The first electrode, the resistive material and the second electrode are all grown on a surface of the substrate, the first electrode and the second electrode are arranged face to face, the resistive material is arranged between the first electrode and the second electrode, the resistive material is contacted with the first electrode and the second electrode at the same time, a contact area of the first electrode and the substrate is bigger than a first contact area of the first electrode and the resistive material, and/or a contact area of the second electrode and the substrate is bigger than a second contact area of the second electrode and the resistive material. According to the resistive random access memory, contact areas of the electrodes and the resistive material are reduces significantly, therefore operating current is reduced to a great extent.
Description
Technical field
The present invention relates to field of semiconductor devices, specifically, relate to a kind of resistance-variable storing device and preparation method thereof.
Background technology
Resistance-variable storing device (RRAM, RESISTANCE RANDOM ACCESS MEMORY) be a kind of novel memory device, because resistance-variable storing device has simple in structure, with existing complementary metal oxide semiconductors (CMOS) (CMOS, COMPLEMENTARYMETAL OXIDE SEMICONDUCTOR) advantage such as process compatible obtains using more and more widely.Common resistance-variable storing device is generally MIM(metal electrode-resistive material-metal electrode) structure, as shown in Figure 1, formed by the hearth electrode 12 that is positioned at stacked setting on the substrate 11, resistive material 13 and top electrode 14.
Resistance-variable storing device is by adding the voltage of opposed polarity and size, change the resistance sizes of resistive material, realizing what data were stored.As shown in Figure 1, when at the hearth electrode 12 of resistance-variable storing device during with top electrode 14 making alive, under DC Electric Field, migration occurs and electrochemical reaction occurs in the oxygen room of resistive material 13, thereby has a resistance variation.Have corresponding operating current generating but have a resistance when changing, operating current can bring certain power consumption to the resistance-variable storing device device, thereby reduces the resistance-variable storing device performance of devices.In order to reduce the power consumption of resistance-variable storing device, improve the resistance-variable storing device performance of devices, need to reduce the operating current that resistance-variable storing device produces when applied voltage.
Summary of the invention
The embodiment of the invention provides a kind of resistance-variable storing device and preparation method thereof, can reduce operating current, reduces the power consumption of resistance-variable storing device device, improves the resistance-variable storing device performance of devices.
On the one hand, the embodiment of the invention provides a kind of resistance-variable storing device, described resistance-variable storing device is formed on the substrate, described resistance-variable storing device comprises the first electrode, resistive material and the second electrode, described the first electrode, resistive material and the second electrode all are grown in described substrate surface, described the first electrode and described the second electrode are oppositely arranged, and described resistive material is between described the first electrode and described the second electrode, and while and described the first electrode and described the second electrode contact; The contact-making surface area of described the first electrode and described substrate is greater than the area of described the first electrode and contacted the first contact-making surface of described resistive material, and/or the contact-making surface area of described the second electrode and described substrate is greater than the area of described the second electrode and contacted the second contact-making surface of described resistive material.
On the other hand, the embodiment of the invention also provides a kind of preparation method of resistance-variable storing device, comprising: deposition of electrode material on substrate; The described electrode material of etching forms the first electrode and the second electrode that are separated from each other and are oppositely arranged; Deposit resistive material between described the first electrode and the second electrode; As stop-layer, described resistive material is carried out chemical mechanical polish process with described the first electrode and described the second electrode, form resistance-variable storing device, wherein, described resistive material simultaneously and described the first electrode and described the second electrode contact; The contact-making surface area of described the first electrode and described substrate is greater than the area of described the first electrode and contacted the first contact-making surface of described resistive material, and/or the contact-making surface area of described the second electrode and described substrate is greater than the area of described the second electrode and contacted the second contact-making surface of described resistive material.
Compared with prior art, the resistance-variable storing device that the embodiment of the invention provides, with traditional structure that is formed at the resistance-variable storing device of the stacked setting of vertical direction on the substrate, change into and be formed at the resistance-variable storing device that horizontal direction arranges on the substrate surface, greatly reduced the contact area of electrode and resistive material, under DC Electric Field, the area in the oxygen room of formation reduces, thereby has reduced operating current to a great extent.
Simultaneously, on the preparation method, use traditional manufacture craft to finish, need not increase cost of manufacture, and, compare with making traditional resistance-variable storing device, more simplified the processing step of making.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use among the embodiment, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.Shown in accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation of prior art resistance-variable storing device;
Fig. 2 is the structural representation of the resistance-variable storing device of one embodiment of the invention;
Fig. 3 is the stereogram of the resistance-variable storing device of one embodiment of the invention;
Fig. 4 is the method flow diagram of preparation embodiment of the invention resistance-variable storing device;
Fig. 5 ~ 8 are the schematic diagram of preparation embodiment of the invention resistance-variable storing device.
Embodiment
The requirement of using in order to satisfy the resistance-variable storing device large-scale integrated, the operating current of resistance-variable storing device is the smaller the better, operation principle according to resistance-variable storing device, effective electrode area (described effective electrode area when resistance-variable storing device, refer to that two electrodes contact jointly with the resistive material, and under DC Electric Field, the area of the part that the resistive material can be had an effect) more hour, operating current is also accordingly less, therefore dwindle the effective electrode area of resistance-variable storing device, just become and reduce one of effective method of resistance-variable storing device operating current.And in existing manufacturing technology, be positioned on the substrate, the resistance-variable storing device of stacked setting, top electrode and hearth electrode respectively with the area of the contact-making surface of resistive material, minimum can only reach 1 μ m*1 μ m, if realize less area, cost of manufacture can increase to some extent, and can produce difficulty in manufacture craft.
Based on this, the embodiment of the invention provides a kind of resistance-variable storing device and preparation method thereof, by changing the position relationship between top electrode, hearth electrode and the resistive material in the resistance-variable storing device, can reduce the effective electrode area of resistance-variable storing device, thereby can reduce operating current, reduce the power consumption of resistance-variable storing device device, improve the resistance-variable storing device performance of devices.
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is carried out clear, complete description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the schematic diagram of indication device structure can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Referring to Fig. 2, be the structural representation of the resistance-variable storing device of one embodiment of the invention.
Described resistance-variable storing device comprises the first electrode 22, resistive material 24 and the second electrode 23, described the first electrode 22, resistive material 24 and the second electrode 23 all are grown in substrate 21 surfaces, wherein, described substrate 21 can be that multicrystalline silicon substrate also can be other Semiconductor substrate.
Described the first electrode 22 and described the second electrode 23 are oppositely arranged, and described resistive material 24 and contacts with described the second electrode 23 with described the first electrode 22 simultaneously between described the first electrode 22 and described the second electrode 23.
Wherein, contact-making surface 221 areas of described the first electrode 22 and described substrate 21 are greater than the area of described the first electrode 22 with described resistive material 24 contacted the first contact-making surfaces 222.Namely, if described the first electrode 22 is cuboid, the length of described cuboid and the bottom surface at wide place (being contact-making surface 221) contact with substrate 21, and side (i.e. the first contact-making surface 222) wide and high place contacts with resistive material 24, the growing up in height of this cuboid.
Contact-making surface 231 areas of described the second electrode 23 and described substrate 21 are greater than the area of described the second electrode 23 with described resistive material 24 contacted the second contact-making surfaces 232.Namely, if described the second electrode 23 is cuboid, the length of described cuboid and the bottom surface at wide place (being contact-making surface 231) contact with substrate 21, and side (i.e. the second contact-making surface 232) wide and high place contacts with resistive material 24, the growing up in height of this cuboid.
It is pointed out that the embodiment of the invention only is example, the shape of the first electrode, resistive material and the second electrode is not limited only to cuboid, can also for other shapes that is fit to arbitrarily, not be restricted at this.
This resistance-variable storing device can comprise the first electrode and the second electrode with above-mentioned feature simultaneously, also can include only the first electrode with above-mentioned feature, and the specific features of the second electrode is not done restriction, perhaps include only the second electrode with above-mentioned feature, and the specific features of the first electrode is not done restriction, as long as the effective electrode area of resistance-variable storing device reduces.
The resistance-variable storing device of this structure is with the top electrode of stacked setting in the prior art, resistive material and hearth electrode are changed to the first electrode that is tiled on the substrate, resistive material and the second electrode, the virtual electrode area of resistance-variable storing device is changed to the first electrode by the lower surface area of top electrode and the upper surface area of hearth electrode, the lateralarea of the second electrode, therefore, as long as the lateralarea of the first electrode is less than the lower surface area of the first electrode, perhaps the lateralarea of the second electrode is less than the lower surface area of the second electrode, can reduce the effective electrode area of resistance-variable storing device, thereby when the resistance-variable storing device applied voltage, the operating current that reduces to produce.In actual fabrication process, if reduce the lateral area of the first electrode or the second electrode, as long as reduce the thickness of electrode material and resistive deposition of material, reduce two electrodes and resistive material size in the horizontal direction in the stepped construction of the prior art of comparing and want to be easy on the technique many.
In addition, the material that forms described the first electrode and described the second electrode can be the material that is suitable as electrode any known or that be about to appearance, for example: Pt, Ti or Al; The material of described resistive material can be the material that is suitable as the resistive material any known or that be about to appearance, for example: TaO, AlO or HfO.
The embodiment of the invention all is formed on the surface of substrate by electrode and the resistive material with resistance-variable storing device, and make the contact area of electrode and resistive material less than the contact area of electrode and substrate, thereby obtained the less resistance-variable storing device of effective electrode area, therefore, when the resistance-variable storing device applied voltage, the operating current that can reduce to produce, and then can reduce the power consumption of memory, reduced the impact on the resistance-variable storing device performance.
Also see also 3, be the stereogram of the resistance-variable storing device of one embodiment of the invention.
In the present embodiment, the first electrode 32 of this resistance-variable storing device, resistive material 34 and the second electrode 33 Heterogeneous Permutations, wherein, the area of the first contact-making surface 322 of described the first electrode 32 is less than the first lateralarea 321 of described the first electrode 32, described the first side 321 is the side at described the first contact-making surface 322 places, the area of the second contact-making surface 332 of described the second electrode 33 is less than the second lateralarea 331 of described the second electrode 33, and described the second side 331 is the side at described the second contact-making surface 332 places.
It may be noted that, described the first electrode 32 or described the second electrode 33 can be micron order with the contact area of substrate, minimum area is 1 μ m*1 μ m, and the area of the second side 331 of the first side 321 of described the first electrode 32 and described the second electrode 33 can be nanoscale, and the thickness minimum of electrode can be several nanometers, the embodiment of the invention provides is formed at substrate 31 lip-deep resistance-variable storing devices, largely reduced the effective electrode area of resistance-variable storing device, and described the first electrode 32 and the second electrode 33 shift to install, so that the contact area of described resistive material and two electrodes further reduces, further dwindled effective electrode area, thereby so that operating current is less, reduce power consumption, further improved the performance of resistance-variable storing device.
Compared with prior art, the resistance-variable storing device that the embodiment of the invention provides, contact area between resistive material and the electrode is nanoscale, simultaneously, shifting to install between the electrode reduced the effective electrode area of resistance-variable storing device more greatly, thereby reduced to a great extent the operating current of resistance-variable storing device, reduce power consumption, improved the device performance of resistance-variable storing device.
Such as Fig. 4, be the method flow diagram of preparation embodiment of the invention resistance-variable storing device.
The method can may further comprise the steps:
Step 401, deposition of electrode material on substrate.
As shown in Figure 5, by chemical vapour deposition technique or physical vaporous deposition, deposition of electrode material on substrate 41.
Wherein, described electrode material 45 is the material that is suitable as electrode any known or that soon occur, for example: Pt, Ti or Al; The thickness that described electrode material is deposited on the substrate 41 can be from several nanometers to up to a hundred nanometers, and the present invention is not restricted this.
Step 402, the described electrode material of etching forms and is separated from each other and is oppositely arranged the first electrode and the second electrode.
As shown in Figure 6, by dry etching or the described electrode material of wet etching etching, form the first electrode 42 that be separated from each other and that be oppositely arranged and the second electrode 43.
In this step, further, can also utilize mask plate that the window of the first electrode and the second electrode is reserved, then by the part outside described the first electrode of the mode etching of photoetching and the second electrode mask plate, so that first electrode and the second electrode structure that form dislocation of etching after finishing, this misconstruction is so that the first side of the first electrode is relative with the second lateral parts of the second electrode, thereby can further reduce the effective electrode area of resistance-variable storing device.
Step 403, deposit resistive material between described the first electrode and the second electrode.
This step is specifically as follows: substrate and on the first electrode and the second electrode on deposit resistive material.
As shown in Figure 7, by chemical vapour deposition technique or physical vaporous deposition, described substrate 41 and on the first electrode 42 and the second electrode 43 on deposit resistive material.
Wherein, the material of described electrode material is the material that is suitable as the resistive material any known or that be about to appearance, for example: TaO, AlO or HfO.
Step 404 as stop-layer, is carried out chemical mechanical polish process to described resistive material with described the first electrode and described the second electrode, forms resistance-variable storing device.
As shown in Figure 8, take described the first electrode 42 and described the second electrode 43 as stop-layer, described resistive material 44 is carried out chemical mechanical polish process, make resistive material 44 identical with the thickness of the second electrode 43 on described substrate 41 with described the first electrode 42.
Wherein, described resistive material while and described the first electrode and described the second electrode contact; The contact-making surface area of described the first electrode and described substrate is greater than the area of described the first electrode and contacted the first contact-making surface of described resistive material, and/or the contact-making surface area of described the second electrode and described substrate is greater than the area of described the second electrode and contacted the second contact-making surface of described resistive material.The structure of this resistance-variable storing device and the structure of the resistance-variable storing device in the previous embodiment are similar, repeat no more herein.
It is to be noted, if described the first electrode 42 that forms shifts to install with described the second electrode 43, then the effective electrode area of this resistance-variable storing device is the area of lap between described the first electrode 42 and described the second electrode 43, be deposited on the resistive material outside the described lap, can remove by dry etching or wet etching, but the described resistive material that is deposited on outside the described lap can not exert an influence in the use of resistance-variable storing device, so can keep yet.
Compared with prior art, the resistance-variable storing device that the embodiment of the invention provides, with traditional structure that is formed at the resistance-variable storing device of the stacked setting of vertical direction on the substrate, be set to be formed at the resistance-variable storing device that horizontal direction arranges on the substrate surface, reduced the contact area of electrode and resistive material, under DC Electric Field, the area in the oxygen room of formation reduces, thereby has reduced operating current to a great extent.And, by two electrode mutual dislocation are arranged, the first electrode and the second electrode are overlapped, can further reduce the effective electrode area of resistance-variable storing device, further under DC Electric Field, the operating current that resistance-variable storing device reduces to produce.
Simultaneously, on the preparation method, use traditional manufacture craft to finish, need not increase cost of manufacture, and, compare with making traditional resistance-variable storing device, more simplified the processing step of making.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Although the present invention discloses as above with preferred embodiment, yet is not to limit the present invention.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. resistance-variable storing device, it is characterized in that, described resistance-variable storing device is formed on the substrate, described resistance-variable storing device comprises the first electrode, resistive material and the second electrode, described the first electrode, resistive material and the second electrode all are grown in described substrate surface, described the first electrode and described the second electrode are oppositely arranged, and described resistive material is between described the first electrode and described the second electrode, and while and described the first electrode and described the second electrode contact; The contact-making surface area of described the first electrode and described substrate is greater than the area of described the first electrode and contacted the first contact-making surface of described resistive material, and/or the contact-making surface area of described the second electrode and described substrate is greater than the area of described the second electrode and contacted the second contact-making surface of described resistive material.
2. resistance-variable storing device as claimed in claim 1, it is characterized in that, described the first electrode, resistive material and the second malposition of electrode are arranged, wherein, the area of the first contact-making surface of described the first electrode is less than the first lateralarea of described the first electrode, described the first side is the side at described the first contact-making surface place, and the area of the second contact-making surface of described the second electrode is less than the second lateralarea of described the second electrode, and described the second side is the side at described the second contact-making surface place.
3. resistance-variable storing device as claimed in claim 1 or 2 is characterized in that,
Described the first electrode, resistive material and the second electrode are cuboid.
4. resistance-variable storing device as claimed in claim 1 or 2 is characterized in that, described resistive material, described the first electrode and the growth thickness of described the second electrode on described substrate are all identical and all less than 1 μ m.
5. resistance-variable storing device as claimed in claim 1 or 2 is characterized in that, the material of described the first electrode and described the second electrode is one of following:
Pt、Ti、Al。
6. resistance-variable storing device as claimed in claim 1 or 2 is characterized in that, the material of described resistive material is one of following:
TaO、AlO、HfO。
7. the preparation method of a resistance-variable storing device is characterized in that, comprising:
Deposition of electrode material on substrate;
The described electrode material of etching forms the first electrode and the second electrode that are separated from each other and are oppositely arranged;
Deposit resistive material between described the first electrode and the second electrode;
As stop-layer, described resistive material is carried out chemical mechanical polish process with described the first electrode and described the second electrode, form resistance-variable storing device, wherein, described resistive material simultaneously and described the first electrode and described the second electrode contact; The contact-making surface area of described the first electrode and described substrate is greater than the area of described the first electrode and contacted the first contact-making surface of described resistive material, and/or the contact-making surface area of described the second electrode and described substrate is greater than the area of described the second electrode and contacted the second contact-making surface of described resistive material.
8. method as claimed in claim 7 is characterized in that,
Described the first electrode, resistive material and the second malposition of electrode are arranged, wherein, the area of the first contact-making surface of described the first electrode is less than the first lateralarea of described the first electrode, described the first side is the side at described the first contact-making surface place, the area of the second contact-making surface of described the second electrode is less than the second lateralarea of described the second electrode, and described the second side is the side at described the second contact-making surface place.
9. method as claimed in claim 7 is characterized in that, the material of described the first electrode and described the second electrode is one of following:
Pt、Ti、Al。
10. method as claimed in claim 7 is characterized in that, the material of described resistive material is one of following:
TaO、AlO、HfO。
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| US20040090815A1 (en) * | 2002-11-08 | 2004-05-13 | Sharp Kabushiki Kaisha | Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor |
| CN102522501A (en) * | 2011-12-29 | 2012-06-27 | 北京大学 | Resistance random access memory with cross array structure and preparation method |
| CN102664235A (en) * | 2012-04-12 | 2012-09-12 | 北京大学 | Small-electrode-structure resistance random access memory and preparation method of small-electrode-structure resistance random access memory |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040090815A1 (en) * | 2002-11-08 | 2004-05-13 | Sharp Kabushiki Kaisha | Nonvolatile variable resistor, memory device, and scaling method of nonvolatile variable resistor |
| CN102522501A (en) * | 2011-12-29 | 2012-06-27 | 北京大学 | Resistance random access memory with cross array structure and preparation method |
| CN102664235A (en) * | 2012-04-12 | 2012-09-12 | 北京大学 | Small-electrode-structure resistance random access memory and preparation method of small-electrode-structure resistance random access memory |
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