CN103035839B - Resistive random access memory and preparation method thereof - Google Patents
Resistive random access memory and preparation method thereof Download PDFInfo
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- CN103035839B CN103035839B CN201210555341.6A CN201210555341A CN103035839B CN 103035839 B CN103035839 B CN 103035839B CN 201210555341 A CN201210555341 A CN 201210555341A CN 103035839 B CN103035839 B CN 103035839B
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Abstract
The invention discloses a resistive random access memory and preparation method thereof. The resistive random access memory is formed on a substrate and comprises a first electrode, a resistive material and a second electrode. The first electrode, the resistive material and the second electrode are all grown on a surface of the substrate, the first electrode and the second electrode are arranged face to face, the resistive material is arranged between the first electrode and the second electrode, the resistive material is contacted with the first electrode and the second electrode at the same time, a contact area of the first electrode and the substrate is bigger than a first contact area of the first electrode and the resistive material, and/or a contact area of the second electrode and the substrate is bigger than a second contact area of the second electrode and the resistive material. According to the resistive random access memory, contact areas of the electrodes and the resistive material are reduces significantly, therefore operating current is reduced to a great extent.
Description
Technical field
The present invention relates to field of semiconductor devices, specifically, relate to a kind of resistance-variable storing device and preparation method thereof.
Background technology
Resistance-variable storing device (RRAM, RESISTANCE RANDOM ACCESS MEMORY) be a kind of novel memory devices part, due to resistance-variable storing device, to have structure simple, with existing complementary metal oxide semiconductors (CMOS) (CMOS, COMPLEMENTARYMETAL OXIDE SEMICONDUCTOR) advantage such as process compatible, obtain applying more and more widely.Common resistance-variable storing device is generally MIM(metal electrode-resistive material-metal electrode) structure, as shown in Figure 1, form by being positioned at the hearth electrode 12 of stacked setting on substrate 11, resistive material 13 and top electrode 14.
Resistance-variable storing device is the voltage by additional opposed polarity and size, changes the resistance sizes of resistive material, realizes that data store.As shown in Figure 1, when when the hearth electrode 12 of resistance-variable storing device is with top electrode 14 making alive, under DC Electric Field, there is migration and electrochemical reaction occur in the Lacking oxygen of resistive material 13, thus produces resistance variations.But have corresponding operating current while producing resistance variations to produce, operating current can bring certain power consumption to resistance-variable storing device device, thus reduces the performance of resistance-variable storing device device.In order to reduce the power consumption of resistance-variable storing device, improving the performance of resistance-variable storing device device, needing the operating current that reduction resistance-variable storing device produces when applied voltage.
Summary of the invention
Embodiments provide a kind of resistance-variable storing device and preparation method thereof, can operating current be reduced, reduce the power consumption of resistance-variable storing device device, improve the performance of resistance-variable storing device device.
On the one hand, embodiments provide a kind of resistance-variable storing device, described resistance-variable storing device is formed on substrate, described resistance-variable storing device comprises the first electrode, resistive material and the second electrode, described first electrode, resistive material and the second electrode all grow at described substrate surface, described first electrode and described second electrode are oppositely arranged, described resistive material between described first electrode and described second electrode, and simultaneously with described first electrode and described second electrode contact; Described first electrode is greater than the area of the first contact-making surface that described first electrode contacts with described resistive material with the contact-making surface area of described substrate, and/or described second electrode is greater than the area of the second contact-making surface that described second electrode contacts with described resistive material with the contact-making surface area of described substrate.
On the other hand, the embodiment of the present invention additionally provides a kind of preparation method of resistance-variable storing device, comprising: at substrate deposition of electrode material; Etch described electrode material, formed and be separated from each other and the first electrode be oppositely arranged and the second electrode; Deposit resistive material between described first electrode and the second electrode; Using described first electrode and described second electrode as stop-layer, chemical mechanical polish process is carried out to described resistive material, forms resistance-variable storing device, wherein, described resistive material simultaneously with described first electrode and described second electrode contact; Described first electrode is greater than the area of the first contact-making surface that described first electrode contacts with described resistive material with the contact-making surface area of described substrate, and/or described second electrode is greater than the area of the second contact-making surface that described second electrode contacts with described resistive material with the contact-making surface area of described substrate.
Compared with prior art, the resistance-variable storing device that the embodiment of the present invention provides, by traditional structure being formed at the resistance-variable storing device of the stacked setting of vertical direction on substrate, change into and be formed at the resistance-variable storing device that on substrate surface, horizontal direction is arranged, substantially reduce the contact area of electrode and resistive material, under DC Electric Field, the area of the Lacking oxygen of formation reduces, thus reduces operating current to a great extent.
Meanwhile, in preparation method, use traditional manufacture craft to complete, need not cost of manufacture be increased, and, compared with the resistance-variable storing device that making is traditional, further simplify the processing step of making.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.Shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawing indicates identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on purport of the present invention is shown.
Fig. 1 is the structural representation of prior art resistance-variable storing device;
Fig. 2 is the structural representation of the resistance-variable storing device of one embodiment of the invention;
Fig. 3 is the stereogram of the resistance-variable storing device of one embodiment of the invention;
Fig. 4 is the method flow diagram of preparation embodiment of the present invention resistance-variable storing device;
Fig. 5 ~ 8 are the schematic diagram of preparation embodiment of the present invention resistance-variable storing device.
Embodiment
In order to meet the requirement of resistance-variable storing device large-scale integrated application, the operating current of resistance-variable storing device is the smaller the better, according to the operation principle of resistance-variable storing device, when effective electrode area (the described effective electrode area of resistance-variable storing device, refer to two electrodes and resistive material cooperating contact, and under DC Electric Field, the area of the part that resistive material can be had an effect) more hour, operating current is also corresponding less, therefore reduce the effective electrode area of resistance-variable storing device, just become and reduce one of most effective method of resistance-variable storing device operating current.And in existing manufacturing technology, be positioned at substrate, the resistance-variable storing device of stacked setting, top electrode and hearth electrode respectively with the area of the contact-making surface of resistive material, minimumly can only reach 1 μm * 1 μm, if realize less area, cost of manufacture can increase to some extent, and can produce difficulty in manufacture craft.
Based on this, embodiments provide a kind of resistance-variable storing device and preparation method thereof, by changing the position relationship in resistance-variable storing device between top electrode, hearth electrode and resistive material, the effective electrode area of resistance-variable storing device can be reduced, thus can operating current be reduced, reduce the power consumption of resistance-variable storing device device, improve the performance of resistance-variable storing device device.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, carry out clear, complete description to the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; the schematic diagram of indication device structure can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
See Fig. 2, it is the structural representation of the resistance-variable storing device of one embodiment of the invention.
Described resistance-variable storing device comprises the first electrode 22, resistive material 24 and the second electrode 23, described first electrode 22, resistive material 24 and the second electrode 23 all grow on substrate 21 surface, wherein, described substrate 21 can be multicrystalline silicon substrate also can be other Semiconductor substrate.
Described first electrode 22 and described second electrode 23 are oppositely arranged, and described resistive material 24 between described first electrode 22 and described second electrode 23, and contacts with described second electrode 23 with described first electrode 22 simultaneously.
Wherein, described first electrode 22 and contact-making surface 221 area of described substrate 21 are greater than the area of the first contact-making surface 222 that described first electrode 22 contacts with described resistive material 24.Namely, if described first electrode 22 is cuboid, the length of described cuboid and the bottom surface (i.e. contact-making surface 221) at wide place contact with substrate 21, and the side (i.e. the first contact-making surface 222) at wide and high place contacts with resistive material 24, growing up in height of this cuboid.
Described second electrode 23 is greater than the area of the second contact-making surface 232 that described second electrode 23 contacts with described resistive material 24 with contact-making surface 231 area of described substrate 21.Namely, if described second electrode 23 is cuboid, the length of described cuboid and the bottom surface (i.e. contact-making surface 231) at wide place contact with substrate 21, and the side (i.e. the second contact-making surface 232) at wide and high place contacts with resistive material 24, growing up in height of this cuboid.
It is pointed out that the embodiment of the present invention is only example, the shape of the first electrode, resistive material and the second electrode is not limited only to cuboid, and can also be the shape that other are applicable to arbitrarily, this is not restricted.
This resistance-variable storing device can comprise first electrode and the second electrode with above-mentioned feature simultaneously, also first electrode with above-mentioned feature can be only included, and the specific features of the second electrode does not limit, or only include second electrode with above-mentioned feature, and the specific features of the first electrode does not limit, as long as the effective electrode area of resistance-variable storing device reduces.
The resistance-variable storing device of this structure is by the top electrode of setting stacked in prior art, resistive material and hearth electrode are changed to the first electrode be laid on substrate, resistive material and the second electrode, the virtual electrode area of resistance-variable storing device is changed to the first electrode by the lower surface area of top electrode and the upper surface area of hearth electrode, the lateralarea of the second electrode, therefore, as long as the lateralarea of the first electrode is less than the lower surface area of the first electrode, or the lateralarea of the second electrode is less than the lower surface area of the second electrode, the effective electrode area of resistance-variable storing device can be reduced, thus when resistance-variable storing device applied voltage, reduce the operating current produced.In actual fabrication process, to reduce the lateral area of the first electrode or the second electrode, as long as reduce the thickness of electrode material and resistive deposition of material, reduce two electrodes in the stepped construction of prior art of comparing and resistive material size in the horizontal direction wants easy many in technique.
In addition, the material forming described first electrode and described second electrode can for known or be about to the material being suitable as electrode that occurs arbitrarily, such as: Pt, Ti or Al; The material of described resistive material can for known or be about to the material being suitable as resistive material that occurs arbitrarily, such as: TaO, AlO or HfO.
The embodiment of the present invention is by all being formed the electrode of resistance-variable storing device and resistive material on a surface of the substrate, and make the contact area of electrode and resistive material be less than the contact area of electrode and substrate, thus obtain the less resistance-variable storing device of effective electrode area, therefore, when resistance-variable storing device applied voltage, the operating current produced can be reduced, and then the power consumption of memory can be reduced, reduce the impact on resistance-variable storing device performance.
Also referring to 3, is the stereogram of the resistance-variable storing device of one embodiment of the invention.
In the present embodiment, first electrode 32 of this resistance-variable storing device, resistive material 34 and the second electrode 33 Heterogeneous Permutation, wherein, the area of the first contact-making surface 322 of described first electrode 32 is less than the first lateralarea 321 of described first electrode 32, described first side 321 is the side at described first contact-making surface 322 place, the area of the second contact-making surface 332 of described second electrode 33 is less than the second lateralarea 331 of described second electrode 33, and described second side 331 is the side at described second contact-making surface 332 place.
It may be noted that, described first electrode 32 or described second electrode 33 can be micron order with the contact area of substrate, minimum area is 1 μm * 1 μm, and the area of the second side 331 of the first side 321 of described first electrode 32 and described second electrode 33 can be nanoscale, and the thickness of electrode minimum can be a few nanometer, the resistance-variable storing device that what the embodiment of the present invention provided be formed on substrate 31 surface, largely reduce the effective electrode area of resistance-variable storing device, and described first electrode 32 and the second electrode 33 shift to install, the contact area of described resistive material and two electrodes is reduced further, reduce effective electrode area further, thus make operating current less, reduce power consumption, further increase the performance of resistance-variable storing device.
Compared with prior art, the resistance-variable storing device that the embodiment of the present invention provides, contact area between resistive material and electrode is nanoscale, simultaneously, shifting to install between electrode, more substantially reduces the effective electrode area of resistance-variable storing device, thus greatly reduces the operating current of resistance-variable storing device, reduce power consumption, improve the device performance of resistance-variable storing device.
As Fig. 4, it is the method flow diagram of preparation embodiment of the present invention resistance-variable storing device.
The method can comprise the following steps:
Step 401, at substrate deposition of electrode material.
As shown in Figure 5, by chemical vapour deposition technique or physical vaporous deposition, deposition of electrode material on substrate 41.
Wherein, described electrode material 45 be arbitrarily known or be about to occur the material being suitable as electrode, such as: Pt, Ti or Al; The thickness that described electrode material is deposited on substrate 41 can from several nanometer to up to a hundred nanometers, and the present invention is not restricted this.
Step 402, etches described electrode material, is formed and is separated from each other and is oppositely arranged the first electrode and the second electrode.
As shown in Figure 6, etch described electrode material by dry etching or wet etching, formed be separated from each other and the first electrode 42 and the second electrode 43 be oppositely arranged.
In this step, further, mask plate can also be utilized to be reserved by the window of the first electrode and the second electrode, then the part outside described first electrode and the second electrode mask plate is etched by the mode of photoetching, the first electrode after having etched and the second electrode is made to form the structure of dislocation, this misconstruction makes the first side of the first electrode relative with the second lateral parts of the second electrode, thus can reduce the effective electrode area of resistance-variable storing device further.
Step 403, deposit resistive material between described first electrode and the second electrode.
This step is specifically as follows: substrate and on the first electrode and the second electrode on deposit resistive material.
As shown in Figure 7, by chemical vapour deposition technique or physical vaporous deposition, described substrate 41 and on the first electrode 42 and the second electrode 43 on deposit resistive material.
Wherein, the material of described electrode material is known or be about to the material being suitable as resistive material that occurs arbitrarily, such as: TaO, AlO or HfO.
Step 404, using described first electrode and described second electrode as stop-layer, carries out chemical mechanical polish process to described resistive material, forms resistance-variable storing device.
As shown in Figure 8, with described first electrode 42 and described second electrode 43 for stop-layer, chemical mechanical polish process is carried out to described resistive material 44, makes resistive material 44 identical with the thickness of the second electrode 43 on described substrate 41 with described first electrode 42.
Wherein, described resistive material simultaneously with described first electrode and described second electrode contact; Described first electrode is greater than the area of the first contact-making surface that described first electrode contacts with described resistive material with the contact-making surface area of described substrate, and/or described second electrode is greater than the area of the second contact-making surface that described second electrode contacts with described resistive material with the contact-making surface area of described substrate.The similar of the resistance-variable storing device in the structure of this resistance-variable storing device and previous embodiment, repeats no more herein.
It is to be noted, if described first electrode 42 formed shifts to install with described second electrode 43, then the effective electrode area of this resistance-variable storing device is the area of lap between described first electrode 42 and described second electrode 43, be deposited on the resistive material outside described lap, can be removed by dry etching or wet etching, but described in be deposited on resistive material outside described lap, can not have an impact in the use of resistance-variable storing device, so also can retain.
Compared with prior art, the resistance-variable storing device that the embodiment of the present invention provides, by traditional structure being formed at the resistance-variable storing device of the stacked setting of vertical direction on substrate, be set to be formed at the resistance-variable storing device that on substrate surface, horizontal direction is arranged, reduce the contact area of electrode and resistive material, under DC Electric Field, the area of the Lacking oxygen of formation reduces, thus reduces operating current to a great extent.And by two electrode mutual dislocation being arranged, making the first electrode and the second electrode part overlap, can reduce the effective electrode area of resistance-variable storing device further, further under DC Electric Field, resistance-variable storing device reduces the operating current produced.
Meanwhile, in preparation method, use traditional manufacture craft to complete, need not cost of manufacture be increased, and, compared with the resistance-variable storing device that making is traditional, further simplify the processing step of making.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (9)
1. a resistance-variable storing device, is characterized in that,
Described resistance-variable storing device is formed on substrate, described resistance-variable storing device comprises the first electrode, resistive material and the second electrode, described first electrode, resistive material and the second electrode all grow at described substrate surface, described first electrode and described second electrode are oppositely arranged, described resistive material between described first electrode and described second electrode, and simultaneously with described first electrode and described second electrode contact;
Described first electrode is greater than the area of the first contact-making surface that described first electrode contacts with described resistive material with the contact-making surface area of described substrate, and/or described second electrode is greater than the area of the second contact-making surface that described second electrode contacts with described resistive material with the contact-making surface area of described substrate;
Described first electrode, resistive material and the second malposition of electrode arrange, wherein, the area of the first contact-making surface of described first electrode is less than the first lateralarea of described first electrode, described first side is the side at described first contact-making surface place, the area of the second contact-making surface of described second electrode is less than the second lateralarea of described second electrode, and described second side is the side at described second contact-making surface place.
2. resistance-variable storing device as claimed in claim 1, is characterized in that,
Described first electrode, resistive material and the second electrode are cuboid.
3. resistance-variable storing device as claimed in claim 1, is characterized in that, described resistive material, described first electrode are all identical with described second electrode growth thickness over the substrate and be all less than 1 μm.
4. resistance-variable storing device as claimed in claim 1, is characterized in that, the material of described first electrode and described second electrode is one of following:
Pt、Ti、Al。
5. resistance-variable storing device as claimed in claim 1, is characterized in that, the material of described resistive material is one of following:
TaO、AlO、HfO。
6. a preparation method for resistance-variable storing device, is characterized in that, comprising:
At substrate deposition of electrode material;
Etch described electrode material, formed and be separated from each other and the first electrode be oppositely arranged and the second electrode;
Deposit resistive material between described first electrode and the second electrode;
Using described first electrode and described second electrode as stop-layer, chemical mechanical polish process is carried out to described resistive material, forms resistance-variable storing device, wherein, described resistive material simultaneously with described first electrode and described second electrode contact; Described first electrode is greater than the area of the first contact-making surface that described first electrode contacts with described resistive material with the contact-making surface area of described substrate, and/or described second electrode is greater than the area of the second contact-making surface that described second electrode contacts with described resistive material with the contact-making surface area of described substrate.
7. method as claimed in claim 6, is characterized in that,
Described first electrode, resistive material and the second malposition of electrode arrange, wherein, the area of the first contact-making surface of described first electrode is less than the first lateralarea of described first electrode, described first side is the side at described first contact-making surface place, the area of the second contact-making surface of described second electrode is less than the second lateralarea of described second electrode, and described second side is the side at described second contact-making surface place.
8. method as claimed in claim 6, is characterized in that, the material of described first electrode and described second electrode is one of following:
Pt、Ti、Al。
9. method as claimed in claim 6, is characterized in that, the material of described resistive material is one of following:
TaO、AlO、HfO。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102522501A (en) * | 2011-12-29 | 2012-06-27 | 北京大学 | Resistance random access memory with cross array structure and preparation method |
| CN102664235A (en) * | 2012-04-12 | 2012-09-12 | 北京大学 | Small-electrode-structure resistance random access memory and preparation method of small-electrode-structure resistance random access memory |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102522501A (en) * | 2011-12-29 | 2012-06-27 | 北京大学 | Resistance random access memory with cross array structure and preparation method |
| CN102664235A (en) * | 2012-04-12 | 2012-09-12 | 北京大学 | Small-electrode-structure resistance random access memory and preparation method of small-electrode-structure resistance random access memory |
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