CN103035811A - Light-emitting diode (LED) packaging structure - Google Patents
Light-emitting diode (LED) packaging structure Download PDFInfo
- Publication number
- CN103035811A CN103035811A CN2011102927494A CN201110292749A CN103035811A CN 103035811 A CN103035811 A CN 103035811A CN 2011102927494 A CN2011102927494 A CN 2011102927494A CN 201110292749 A CN201110292749 A CN 201110292749A CN 103035811 A CN103035811 A CN 103035811A
- Authority
- CN
- China
- Prior art keywords
- encapsulating structure
- led
- led encapsulating
- substrate
- encapsulated layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title abstract 9
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 11
- 239000004033 plastic Substances 0.000 claims description 9
- 229920003023 plastic Polymers 0.000 claims description 9
- 239000004954 Polyphthalamide Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 6
- 229920006375 polyphtalamide Polymers 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 4
- 239000012780 transparent material Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 2
- -1 for example Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 230000006978 adaptation Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED packaging structure. The LED packaging structure comprises a substrate, an LED chip, a reflecting layer and a packaging layer, wherein the substrate comprises at least two electrodes, electrodes are arranged on the top face of the substrate and are provided protruding portions which are located on two sides of the substrate respectively, the LED chip is arranged on electrodes and is electrically connected with electrodes, the reflecting layer surrounds the LED chip, and the packaging layer covers the substrate, the reflecting layer and the LED chip. According to the LED packaging structure, protruding portions of electrodes can form a lateral packaging structure, and the complete covering of the packaging layer can improve the tightness of the LED packaging structure.
Description
Technical field
The present invention relates to a kind of LED encapsulating structure, relate in particular to a kind of LED encapsulating structure with better adaptation.
Background technology
The LED industry is one of industry that attracted most attention in recent years, development so far, that the LED product has had is energy-conservation, power saving, high efficiency, the reaction time is fast, the life cycle time is long and not mercurous, have the advantage such as environmental benefit, yet the LED high power products has a reflector and arranges for obtaining needed brightness and color in the LED encapsulating structure.Described reflector typically uses plastics and makes, for example, and PPA (Polyphthalamide) or the plastics of other high thermoplasticity.When the electrode of described reflector substrate top surface in described encapsulating structure made from plastics like this arranges, because not good with the material adaptation of described electrode metal character, therefore can directly have influence on the adaptation of described LED encapsulating structure.Although the processing procedure running of punching first on described electrode metal sheet is arranged at present, then the pertusate described electrode of tool is arranged in the described LED encapsulating structure and uses, increase the contact area of described reflector and described substrate by described hole, thereby improve the adaptation of described LED encapsulating structure.But, improve the adaptation of described LED encapsulating structure in the processing procedure mode that increases described reflector contact area, not only cause the increase in man-hour and cost is improved, should strengthen the improvement that these improve the adaptation modes in fact.
Summary of the invention
In view of this, be necessary to provide a kind of adaptation, cost-effective LED encapsulating structure of improving.
A kind of LED encapsulating structure, it comprises a substrate, a led chip, a reflector and an encapsulated layer.Described substrate comprises at least two electrodes, and described electrode is arranged on the end face of described substrate, and has respectively the both sides that a protuberance is positioned at described substrate.Described led chip is arranged on the described electrode and with described electrode reaches electric connection.Described reflector is around described led chip, and described encapsulated layer covers described substrate, described reflector and described led chip.
Above-mentioned LED encapsulating structure, because described encapsulated layer intactly coats the structure of described substrate, described reflector and the combination of described led chip from the outside, therefore can directly improve the adaptation of described LED encapsulating structure, can not increase other extra processing procedure increases cost, the described protuberance that described electrode of while has, can make the configuration of described LED encapsulating structure formation side direction type, the utilization during convenient actual the use.
Description of drawings
Fig. 1 is the cutaway view of LED encapsulating structure of the present invention.
Fig. 2 is the vertical view of LED encapsulating structure of the present invention.
The main element symbol description
| The |
10 |
| Exiting |
102 |
| |
12 |
| |
122 |
| The |
124 |
| |
126、128 |
| |
1262、1282 |
| |
1264、1284 |
| |
14 |
| |
142 |
| The |
16 |
| The cup-shaped |
162 |
| The |
164、182 |
| Trailing |
166、184 |
| Encapsulated |
18 |
Following embodiment further specifies the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Below in conjunction with accompanying drawing the present invention being done one specifically introduces.
See also Fig. 1, be depicted as LED encapsulating structure 10 of the present invention, it comprises a substrate 12, a led chip 14, a reflector 16 and an encapsulated layer 18.Described substrate 12 has an end face 122 and a bottom surface 124, and described substrate 12 materials can be pottery, silicon or plastics.Comprise at least two electrodes 126,128 on the end face 122 of described substrate 12, described electrode 126,128 has respectively a join domain 1262,1282 and protuberances 1264,1284, wherein said join domain 1262,1282 is positioned at described substrate top surface 122, and described protuberance 1264,1284 then is positioned at the both sides of described substrate 12.Described led chip 14 is arranged at the join domain 1262 of one of them described electrode 126, and reaches electric connection with described electrode 126,128 described join domain 1262,1282 respectively by conductor wire 142.Described electrode 126,128 has different polarity, and one is that positive electrode, one are negative electrode.
Described reflector 16 is arranged at the end face 122 of described substrate 12, and is positioned at described substrate 12 periphery rings around described led chip 14.Described reflector 16 is around forming a cup-shaped groove 162, described electrode 126,128 described join domain 1262,1282 are embedded in the described cup-shaped groove 162, and described electrode 126,128 described protuberance 1264,1284 are then stretched out by the arranged on left and right sides face 164 of described cup-shaped groove 162.Described led chip 14 in the described cup-shaped groove 162 is luminous towards the top, and the end face that makes described cup-shaped groove 162 is the exiting surface 102 of described LED encapsulating structure 10.Please consult again the vertical view of Fig. 2 LED encapsulating structure of the present invention.Described cup-shaped groove 162 arranged on left and right sides faces 164 outward extending described protuberances 1264,1284 turn to the trailing flank 166 of described cup-shaped groove 162 to extend after extending laterally again.Described protuberance 1264,1284 to 166 extensions of described cup-shaped groove 162 trailing flanks, in order to be electrically connected with described circuit substrate (not indicating among the figure), make described LED encapsulating structure 10 form the encapsulation of side direction type (Side View Type), described exiting surface 102 is positioned at the side bright dipping of described circuit substrate.Described reflector 16 has the effect of reflection ray, to make in insert molding (Insert Molding) mode, its material can be plastics or macromolecular material, for example, and PPA (Polyphthalamide) plastics or epoxy resin (Epoxy) material.
Described encapsulated layer 18 coats in the outside in described reflector 16, and covers described substrate 12 and described led chip 14.Described encapsulated layer 18 intactly coats described reflector 16, described substrate 12 and described led chip 14, can effectively promote the adaptation of described LED encapsulating structure 10.Described encapsulated layer 18 is to make in insert molding (Insert Molding) mode, make described electrode 126,128 described protuberance 1264,1284, by after the extending laterally of described encapsulated layer 18 arranged on left and right sides faces 182, turn to again the trailing flank 184 of described encapsulated layer 18, keep side direction type (the Side View Type) encapsulation of described LED encapsulating structure 10.Described protuberance 1264,1284 development lengths at described trailing flank 184, concordant with described trailing flank 182 at least, described protuberance 1264,1284 can be electrically connected with circuit substrate reposefully.Described encapsulated layer 18 is thermoplasticity or heat cured transparent material, can include fluorescent material in the described transparent material.
Above-mentioned LED encapsulating structure 10, described electrode 126,128 described protuberance 1264,1284, after being extended laterally by described encapsulated layer 18 left and right two sides 182, turn to again the trailing flank 184 of described encapsulated layer 18, described protuberance 1264,1284 is electrically connected in the side of described encapsulated layer 18, described exiting surface 102 is formed on described circuit substrate side bright dipping because of vertical with described encapsulated layer 18 sides 182, conveniently consists of described side direction type (Side View Type) encapsulating structures.Described encapsulated layer 18 intactly coats reflector 16, described substrate 12 and described led chip 14 in described insert molding mode, just can directly strengthen the adaptation of described LED encapsulating structure 10.
To sum up, the described encapsulated layer of LED encapsulating structure of the present invention has complete covering property, the described protuberance that described electrode has, can extend side of rear steering by the both sides of described encapsulated layer electrical connection is provided, make described LED encapsulating structure form the side direction type encapsulation, reach the adaptation that promotes described LED encapsulating structure, setting that simultaneously can also be stable.
In addition, those skilled in the art also can do other variation in spirit of the present invention, and certainly, the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (11)
1. LED encapsulating structure, it comprises a substrate, a led chip, a reflector and an encapsulated layer, described substrate comprises at least two electrodes, described electrode is arranged on the end face of described substrate, and have respectively both sides that a protuberance is positioned at described substrate, described led chip is arranged on the described electrode and with described electrode reaches electric connection, and described reflector is around described led chip, and described encapsulated layer covers described substrate, described reflector and described led chip.
2. LED encapsulating structure as claimed in claim 1 is characterized in that: described baseplate material can be pottery, silicon or plastics.
3. LED encapsulating structure as claimed in claim 1, it is characterized in that: described at least two electrodes have a join domain at described substrate top surface, one of them described join domain arranges described led chip, and described led chip is electrically connected by conductor wire and described join domain.
4. LED encapsulating structure as claimed in claim 3, it is characterized in that: described at least two electrodes have different polarity, and one is positive electrode, and one is negative electrode.
5. LED encapsulating structure as claimed in claim 1, it is characterized in that: described reflector is arranged at the end face of described substrate around forming a cup-shaped groove, described cup-shaped groove is embedded in described join domain is set, and the end face of described cup-shaped groove is the exiting surface of described LED encapsulating structure.
6. LED encapsulating structure as claimed in claim 1, it is characterized in that: its material of described reflector is plastics or macromolecular material, for example, PPA (Polyphthalamide) plastics or epoxide resin material.
7. LED encapsulating structure as claimed in claim 1, it is characterized in that: described reflector and described encapsulated layer are to make in the insert molding mode.
8. LED encapsulating structure as claimed in claim 1 is characterized in that: the described protuberance of described electrode after being extended laterally by described encapsulated layer arranged on left and right sides face, turns to the trailing flank of described encapsulated layer again.
9. LED encapsulating structure as claimed in claim 8, it is characterized in that: described protuberance is concordant with described trailing flank at least at the development length of described encapsulated layer trailing flank.
10. LED encapsulating structure as claimed in claim 8 is characterized in that: described LED encapsulating structure is the side direction type encapsulation.
11. LED encapsulating structure as claimed in claim 1 is characterized in that: described encapsulated layer for thermoplasticity or heat cured transparent material, can include fluorescent material in the described transparent material.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102927494A CN103035811A (en) | 2011-09-30 | 2011-09-30 | Light-emitting diode (LED) packaging structure |
| TW100137672A TW201314976A (en) | 2011-09-30 | 2011-10-18 | Structure of the LED package |
| US13/366,376 US20130082293A1 (en) | 2011-09-30 | 2012-02-06 | Led package device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102927494A CN103035811A (en) | 2011-09-30 | 2011-09-30 | Light-emitting diode (LED) packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103035811A true CN103035811A (en) | 2013-04-10 |
Family
ID=47991746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102927494A Pending CN103035811A (en) | 2011-09-30 | 2011-09-30 | Light-emitting diode (LED) packaging structure |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20130082293A1 (en) |
| CN (1) | CN103035811A (en) |
| TW (1) | TW201314976A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110391326A (en) * | 2018-04-17 | 2019-10-29 | 展晶科技(深圳)有限公司 | LED of side view type encapsulating structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160141301A (en) * | 2015-05-29 | 2016-12-08 | 삼성전자주식회사 | Semiconductor light emitting device package |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101222003A (en) * | 2007-01-08 | 2008-07-16 | 宋文恭 | Method for manufacturing side direction LED and its structure |
| US20090256166A1 (en) * | 2005-08-05 | 2009-10-15 | Susumu Koike | Semiconductor light-emitting device |
| US20100252848A1 (en) * | 2009-04-01 | 2010-10-07 | Chih-Lung Liang | Method for forming an led lens structure and related structure |
| US20110018026A1 (en) * | 2008-03-25 | 2011-01-27 | Kabushiki Kaisha Toshiba | Light emitting device, and method and apparatus for manufacturing same |
-
2011
- 2011-09-30 CN CN2011102927494A patent/CN103035811A/en active Pending
- 2011-10-18 TW TW100137672A patent/TW201314976A/en unknown
-
2012
- 2012-02-06 US US13/366,376 patent/US20130082293A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090256166A1 (en) * | 2005-08-05 | 2009-10-15 | Susumu Koike | Semiconductor light-emitting device |
| CN101222003A (en) * | 2007-01-08 | 2008-07-16 | 宋文恭 | Method for manufacturing side direction LED and its structure |
| US20110018026A1 (en) * | 2008-03-25 | 2011-01-27 | Kabushiki Kaisha Toshiba | Light emitting device, and method and apparatus for manufacturing same |
| US20100252848A1 (en) * | 2009-04-01 | 2010-10-07 | Chih-Lung Liang | Method for forming an led lens structure and related structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110391326A (en) * | 2018-04-17 | 2019-10-29 | 展晶科技(深圳)有限公司 | LED of side view type encapsulating structure |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130082293A1 (en) | 2013-04-04 |
| TW201314976A (en) | 2013-04-01 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130410 |