CN102751425B - Encapsulation structure of LED and bearing part thereof - Google Patents
Encapsulation structure of LED and bearing part thereof Download PDFInfo
- Publication number
- CN102751425B CN102751425B CN201210173756.7A CN201210173756A CN102751425B CN 102751425 B CN102751425 B CN 102751425B CN 201210173756 A CN201210173756 A CN 201210173756A CN 102751425 B CN102751425 B CN 102751425B
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- bearing
- led
- chip bearing
- electrode
- encapsulation structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- Led Device Packages (AREA)
Abstract
The present invention discloses a kind of encapsulation structure of LED and bearing part thereof, and described encapsulation structure of LED comprises a bearing part, a light-emitting diode chip for backlight unit and at least one wire. Described bearing part comprises a lead frame and an insulation colloid, and described lead frame has a chip bearing and at least one electrode, between described chip bearing and electrode, is formed and is electrically insulated by a gap; Described electrode has at least one sunk structure, lead frame described in the insulating materials covered section of described insulation colloid bottom, and be filled in described gap and sunk structure, insulating materials in described sunk structure can extend outside aqueous vapor and penetrate into the path in described bearing part, thereby reduces the surface oxidation phenomenon of described chip bearing and electrode.
Description
Technical field
The present invention relates to a kind of encapsulation structure of LED and bearing part thereof, particularly relate to a kind of encapsulation structure of LED and bearing part thereof that reduces lead frame generation surface oxidation.
Background technology
Light emitting diode (lightemittingdiode, LED) be the solid-state light-emitting component made from semi-conducting material, great majority use III family chemical element and V family chemical element composition, after electronics being combined with electric hole with additional forward voltage, energy are discharged with the form of light; Due to electronics in its two polar body in different materials, electric hole shared can rank difference, gap that between the two can rank is called energy gap (gap), the light of different wave length is sent in impact in conjunction with the energy of rear photon, comprise visible ray and black light.
The feature of light emitting diode maximum is: environmental protection, power consumption is little, luminous efficiency is high, long service life, maintenance cost are low, safe and reliable, reaction speed is fast and rich color, its lighting source progressively replaces the conventional lights source of high consume, become new generation illumination main flow, be widely used at present consumption electronic products, traffic sign and automobile lighting, various situation light fixture and specific function as plant growth field etc.
Light emitting diode is mainly made up of parts such as chip, lead frame, insulation colloid and packaging adhesive materials. wherein lead frame has two large functions: the one, connect each element and support light-emittingdiode encapsulating structure, and the 2nd, transporting heat energy effectively in the time of element operation, therefore, can say parts very crucial in LED package. along with developing rapidly of integrated circuit, it is highly integrated, the variation of multifunction and encapsulation, and lead frame is just towards light, thin, short, little future development, also more and more high for the requirement of lead frame. but, when package structure for LED is exposed in oxygen or aqueous vapor, aqueous vapor can be located upwards to infiltrate along the interface that engages between itself and packaging adhesive material by the structure lateral border of lead frame or by lower surface etc., cause the exposed lead frame surface, bottom of the inside accommodation space of encapsulating structure to be oxidized, especially the indent (ear) that the accommodation space of colloid of insulating forms corresponding to the electrode routing position of lead frame is subject to aqueous vapor invasion most, and make electrode routing position produce oxidation blackening phenomena, this class oxidation blackening surface can absorb reverberation, and the brightness that light emitting diode is outwards penetrated by accommodation space declines, cause light color inhomogeneous or affect the routing reliability of wire, and then increase package structure for LED in operational unstability, cause the yield of product to reduce.
Therefore, be necessary to provide a kind of encapsulation structure of LED and bearing part thereof of improvement, to solve the existing problem of prior art.
Summary of the invention
In view of this, object of the present invention is to provide a kind of package structure for LED and bearing part thereof, and it can improve the technical problems such as the existing lead frame surface oxidation of existing encapsulating structure technology.
One embodiment of the invention provides a kind of encapsulation structure of LED, and it comprises: a bearing part, a light-emitting diode chip for backlight unit and at least one wire. Described bearing part comprises: a lead frame and an insulation colloid. Described lead frame has a chip bearing and at least one electrode, between described chip bearing and electrode, is formed and is electrically insulated by a gap, and described electrode respectively has a routing position and a sunk structure, and described routing position is relatively near described chip bearing. Described insulation colloid, its top has an opening, there is an inclined wall, to form an opening and an accommodation space, in described accommodation space, have at least one recess, and described sunk structure correspondence is positioned at described indent, described lead frame is positioned at the bottom of described accommodation space, and lead frame described in the insulating materials covered section of described insulation colloid bottom, and be filled in described gap and sunk structure. Described light-emitting diode chip for backlight unit is positioned in described chip bearing. Described wire is electrically connected the routing position of described light-emitting diode chip for backlight unit and described electrode, and wherein said recess is corresponding to the position of described wire and electrode electric connection.
Moreover another embodiment of the present invention provides a kind of bearing part of light-emittingdiode encapsulating structure, it comprises: a chip bearing, two electrodes and an insulation colloid. Described chip bearing has a chip bearing region. Described two electrodes are positioned at the both sides of described chip bearing, and are electrically insulated by a gap and described chip bearing respectively, and described electrode respectively has a routing position and a sunk structure, and described routing position is relatively near described chip bearing. Described insulation colloid has an inclined wall, to form an opening and an accommodation space, in described accommodation space, there is at least one recess, described sunk structure correspondence is positioned at described indent, and described chip bearing and electrode are positioned at the bottom of described accommodation space, and chip bearing and the described electrode of part described in the insulating materials covered section of described insulation colloid bottom, and be filled in described gap and sunk structure.
In addition, further embodiment of this invention provides a kind of bearing part of light-emittingdiode encapsulating structure, and it comprises: a chip bearing, two electrodes and an insulation colloid. Described chip bearing has a chip bearing region and two grooves, and described two grooves are positioned at the both ends in described chip bearing region. Described two electrodes are positioned at the both sides of described chip bearing and are electrically insulated by a gap and described chip bearing respectively, described gap is communicated in described groove, described electrode respectively has a routing position and a sunk structure, and described routing position is relatively near described chip bearing. Chip bearing and the described electrode of part described in the insulating materials covered section of described insulation colloid bottom, and be filled in described groove, gap and sunk structure, the insulating materials of wherein said insulation colloid bottom covers the region of described chip bearing upper surface except a chip predetermined set region.
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate appended graphicly, be described in detail below:
Brief description of the drawings
Fig. 1 is the three-dimensional structure diagram of the encapsulation structure of LED of one embodiment of the invention.
Fig. 2 is that the encapsulation structure of LED of Fig. 1 is along the sectional view of A-A line direction.
Fig. 3 is the three-dimensional structure diagram of lead frame in the encapsulation structure of LED of Fig. 1.
Fig. 4 is the three-dimensional structure diagram of the encapsulation structure of LED of another embodiment of the present invention.
Fig. 5 is the three-dimensional structure diagram of lead frame in Fig. 4 encapsulation structure of LED.
Detailed description of the invention
For above-mentioned purpose of the present invention, feature and advantage are become apparent, preferred embodiment of the present invention cited below particularly, and coordinate accompanying drawing, be described below in detail. Moreover, the direction term that the present invention mentions, for example " on ", D score, " left side ", " right side ", 'fornt', 'back', " interior ", " outward ", " side " etc., be only the direction with reference to annexed drawings. Therefore, the direction term of use is in order to illustrate and to understand the present invention, but not in order to limit the present invention.
The present invention is by below utilizing Fig. 1 to 2 to describe one by one detail structure, assembled relation and the operation principles thereof of the above-mentioned each element of one embodiment of the invention in detail.
Shown in Fig. 1, it discloses the encapsulation structure of LED 10 of one embodiment of the invention, and it mainly comprises a bearing part 101, a light-emitting diode chip for backlight unit 102, at least one wire 103 and a printing opacity lid 104.
Described bearing part 101 comprises a lead frame (leadframe) 105 and an insulation colloid 106, and the top of described insulation colloid 106 has an opening, and forms an accommodation space; Described light-emitting diode chip for backlight unit 102 is positioned on described lead frame 105, and described wire 103 is electrically connected described light-emitting diode chip for backlight unit 102 and described lead frame 105, and described printing opacity lid 104 covers the opening part of described bearing part 101. The opening of described bearing part 101 caves inward and forms an accommodation space, and its bottom internal diameter is slightly smaller than the aperture of opening.
As shown in Figure 2, disclose the encapsulation structure of LED of Fig. 1 along the sectional view of A-A line direction. Please refer to Fig. 2, described lead frame 105 comprises a chip bearing 107 and is located at two electrodes 108 of the left and right sides of described chip bearing 107. Gap 109 described in the filling insulating material of described insulation colloid 106 between chip bearing 107 and electrode 108 forms and is electrically insulated. Described gap 109 can separate described chip bearing 107 and electrode 108 completely on cross section. The manufacture of described lead frame 105 mainly comprises the single or double of processing sheet metal with chemical etching or mechanical stamping mode, to define described chip bearing 107, electrode 108 and gap 109. The material of described lead frame 105 can use copper, copper alloy, iron-nickel alloy or aluminum metal etc., but is not limited to this. In addition, can be on lead frame 105 plated surfaces a coat of metal (metalcoating) for example silver-plated or gold-plated, to increase electric conductivity.
As shown in Fig. 1 and 2, described insulation colloid 106 has an inclined wall 110, and to form described opening and accommodation space, described inclined wall 110 is around described light-emitting diode chip for backlight unit 102, and keeps a segment distance with described light-emitting diode chip for backlight unit 102. Described lead frame 105 is positioned at the bottom of described accommodation space. Described accommodation space has at least one recess 111, and described recess 111 correspondences are positioned at a routing position of described electrode 108. The material of described insulation colloid 106 can be lighttight packaging adhesive material or ceramic material, for example, comprise epoxy resin (epoxy) and filler particles, and described filler particles can be glass or alumina particle, but is not limited to this.
Described light-emitting diode chip for backlight unit 102 is installed in described chip bearing 107. For example, LED Chips for Communication 102 can be fixed on described chip bearing 107 via metal solder. Described wire 103 electricity respectively property connect the electrical connection pad (for example, anodal and negative pole connection pad) of described light-emitting diode chip for backlight unit 102 to a routing position of the electrode 108 of described lead frame 105. In another embodiment, described negative pole connection pad is not arranged at the upper surface of light-emitting diode chip for backlight unit 102 as shown in the previous embodiment, but is arranged at the lower surface of light-emitting diode chip for backlight unit 102. Described negative pole connection pad can be electrically connected to described chip bearing 107 by a conduction material, and an electrode 108 can be only set.
As shown in Fig. 1 and 2, in the present embodiment, described printing opacity lid 104 covers the opening part of described bearing part 101, to seal the accommodation space of described bearing part 101, the material of described printing opacity lid 104 can be the encapsulating material of printing opacity, for example light-transmissive resin or glass, wherein light-transmissive resin can be selected from epoxy resin (epoxy) and is or silicone resin (silicone) such as is at the light-transmissive resin material. Described light-emitting diode chip for backlight unit 102 light-emitting area upward can be coated with the printing opacity colloid (not illustrating) containing phosphor powder in addition. The light that described light-emitting diode chip for backlight unit 102 penetrates, for example: blue light, can be converted to by phosphor powder the light of different colours, for example: green glow, gold-tinted or ruddiness, the light of its different colours mixes to produce white light again. In other embodiments of the invention, also phosphor powder can be mixed to printing opacity lid 104 and replace the printing opacity colloid containing phosphor powder.
Fig. 3 discloses the three-dimensional structure diagram of lead frame in the encapsulation structure of LED of Fig. 1. As shown in Figure 3, described electrode 108 is except having a routing position (not indicating), separately have a sunk structure 114, described routing position is relatively near described chip bearing 107, and the outer side edges of the relatively close described insulation colloid 106 of described sunk structure 114. Described sunk structure 114 can be made in the lump when etching or punching press form described chip bearing 107 and electrode 108, for example use wet type to etch partially (halfetching) method, and using copper chloride as copper etchant solution, coordinate etch mask to define the figure of described sunk structure 114. In addition sunk structure 114 described in the filling insulating material part of described insulation colloid 106 bottoms. Because the sunk structure 114 of described electrode 108 is filled with insulating materials, and locate corresponding to described recess 111 (referring to Fig. 2), make the path that aqueous vapor is infiltrated recess 111 along gap between described electrode 108 lower surfaces (or side surface) and insulation colloid 106 originally elongated, therefore can effectively reduce the probability of infiltrating and then occur the surface oxidation at the routing position of described electrode 108 because of aqueous vapor.
As shown in Figure 3, on both ends 112a, the 112b of described chip bearing 107, respectively there is a groove 113a, 113b, described both ends 112a, 112b refer to the antelabium of the another both sides of described chip bearing 107, and described groove 113a, 113b can make together when etching or punching press form described chip bearing 107 and electrode 108. Described groove 113a, 113b are two grooves, and it is horizontally through described chip bearing 107, and the two ends of described groove 113a, 113b are connected with described gap 109. Between described two groove 113a, 113b and described two gaps 109, be defined as a chip bearing region of described chip bearing 107. The insulating materials covered section lead frame 105 of described insulation colloid 106 bottoms, and be also filled in described groove 113a, 113b.
As shown in Fig. 4 and 5, its encapsulation structure of LED that discloses another embodiment of the present invention is also roughly continued to use element title and the figure number of Fig. 1 embodiment similar in appearance to Fig. 1 embodiment, wherein the encapsulation structure of LED 10 of Fig. 4 comprises a bearing part 101 equally, one light-emitting diode chip for backlight unit 102, at least one wire 103 and a printing opacity lid 104, described bearing part 101 comprises a lead frame 105 and an insulation colloid 106, described lead frame 105 has a chip bearing 107 and two electrodes 108, between described chip bearing 107 and each electrode 108, there is respectively a gap 109, described insulation colloid 106 has an inclined wall 110, to form opening and the accommodation space at described bearing part 101 tops. described accommodation space has at least one recess 111, and described recess 111 correspondences are positioned at a routing position of described electrode 108. on both ends 112a, the 112b of described chip bearing 107, form respectively a groove 113c, 113d. described electrode 108 respectively has a routing position and a sunk structure 114.
Described in the present embodiment, groove 113c, the 113d of chip bearing 107 extends across in the bottom margin 106a (referring to Fig. 5) of the accommodation space of described insulation colloid 106, and makes the exposed surface of described chip bearing 107 in the accommodation space of described insulation colloid 106 minimize (that is the insulating materials of described insulation colloid 106 bottoms covers the region of described chip bearing 107 upper surfaces except a chip predetermined set region (chip bearing region)).
A large amount of being filled in described groove 113c, 113d of insulating materials of described insulation colloid 106 bottoms, make the path that aqueous vapor is infiltrated along gap between both ends 112a, 112b lower surface (or side surface) and the described insulation colloid 106 of described chip bearing 107 originally elongated, and also can relatively reduce the metal surface of exposure, therefore can effectively reduce the chance of infiltrating and then occur the surface oxidation of described chip bearing 107 because of aqueous vapor. In addition, because the sunk structure 114 of described electrode 108 is filled with insulating materials, and corresponding to described recess 111 places, make the path that aqueous vapor is infiltrated along described electrode 108 lower surfaces (or side surface) originally elongated, therefore equally also can effectively reduce the probability of infiltrating and then occur the surface oxidation at the routing position of described electrode 108 because of aqueous vapor.
The present invention is described by above-mentioned related embodiment, but above-described embodiment is only for implementing example of the present invention. Must be pointed out that, published embodiment does not limit the scope of the invention. On the contrary, be contained in the spirit of claims and the amendment of scope and impartial setting is included in scope of the present invention.
Claims (10)
1. an encapsulation structure of LED, is characterized in that: described encapsulation structure of LED comprises:
One bearing part, described bearing part comprises:
One lead frame, has a chip bearing and at least one electrode, between described chip bearing and electrode, is formed and is electrically insulated by a gap, and described electrode has a routing position and a sunk structure, and described routing position is relatively near described chip bearing; And
One insulation colloid, has an inclined wall, to form an opening and an accommodation space, in described accommodation space, there is at least one recess, and described sunk structure correspondence is positioned at described indent, lead frame described in described insulation colloid covered section, and be filled in described gap and sunk structure;
One light-emitting diode chip for backlight unit, is positioned in described chip bearing; And
At least one wire, it is electrically connected the routing position of described light-emitting diode chip for backlight unit and described electrode, and wherein said recess is corresponding to the position of described wire and electrode electric connection.
2. encapsulation structure of LED as claimed in claim 1, is characterized in that: described chip bearing has two grooves, extends across in the bottom margin of the accommodation space of described insulation colloid.
3. encapsulation structure of LED as claimed in claim 1, is characterized in that: described encapsulation structure of LED also comprises: a printing opacity lid, covers the opening part of described bearing part.
4. a bearing part for encapsulation structure of LED, is characterized in that: the bearing part of described encapsulation structure of LED comprises:
One chip bearing, has a chip bearing region;
Two electrodes, are positioned at the both sides of described chip bearing, and Bing is electrically insulated by a gap and described chip bearing respectively, and described electrode respectively has a routing position and a sunk structure, and described routing position is relatively near described chip bearing; And
One insulation colloid, there is an inclined wall, to form an opening and an accommodation space, in described accommodation space, there is at least one recess, described sunk structure correspondence is positioned at described indent, and described chip bearing and electrode some is exposed to described accommodation space respectively, and chip bearing and the described electrode of part described in described insulation colloid covered section, and be filled in described gap and sunk structure.
5. the bearing part of encapsulation structure of LED as claimed in claim 4, is characterized in that: described chip bearing has two grooves, extends across in the bottom margin of the accommodation space of described insulation colloid.
6. a bearing part for encapsulation structure of LED, is characterized in that: the bearing part of described encapsulation structure of LED comprises:
One chip bearing, has a chip bearing region and two grooves, and described two grooves are positioned at the both ends in described chip bearing region;
Two electrodes, be positioned at the both sides of described chip bearing, Bing is electrically insulated by a gap and described chip bearing respectively, and described gap is communicated in described groove, described electrode respectively has a routing position and a sunk structure, and described routing position is relatively near described chip bearing; And
One insulation colloid, its top has an opening and forms an accommodation space, and chip bearing and the described electrode of part described in described insulation colloid covered section, and be filled in described groove, gap and sunk structure, wherein said insulation colloid covers the region of described chip bearing upper surface except described chip bearing region.
7. the bearing part of encapsulation structure of LED as claimed in claim 6, is characterized in that: two grooves of described chip bearing extend across in the bottom margin of the accommodation space of described insulation colloid.
8. the bearing part of encapsulation structure of LED as claimed in claim 6, is characterized in that: the material of described insulation colloid is lighttight packaging adhesive material.
9. the bearing part of encapsulation structure of LED as claimed in claim 6, is characterized in that: described encapsulation structure of LED also comprises: a printing opacity lid, covers the opening part of described bearing part.
10. the bearing part of encapsulation structure of LED as claimed in claim 9, is characterized in that: the material of described printing opacity lid is light-transmissive resin.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610203583.7A CN105655471B (en) | 2012-05-30 | 2012-05-30 | Encapsulation structure of LED and its load-bearing part |
| CN201210173756.7A CN102751425B (en) | 2012-05-30 | 2012-05-30 | Encapsulation structure of LED and bearing part thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210173756.7A CN102751425B (en) | 2012-05-30 | 2012-05-30 | Encapsulation structure of LED and bearing part thereof |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610203583.7A Division CN105655471B (en) | 2012-05-30 | 2012-05-30 | Encapsulation structure of LED and its load-bearing part |
Publications (2)
| Publication Number | Publication Date |
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| CN102751425A CN102751425A (en) | 2012-10-24 |
| CN102751425B true CN102751425B (en) | 2016-05-04 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104752597B (en) * | 2013-12-30 | 2018-09-07 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulation structure and its packaging method |
| CN104064656B (en) * | 2014-06-25 | 2017-11-17 | 广东晶科电子股份有限公司 | A kind of LED support and its LED component and preparation method with humidity resistance |
| CN109560183B (en) * | 2015-04-29 | 2020-04-17 | 光宝光电(常州)有限公司 | Multi-layer circuit board and light emitting diode packaging structure |
| CN114335290A (en) * | 2019-08-13 | 2022-04-12 | 光宝光电(常州)有限公司 | Packaging structure |
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| CN101447477A (en) * | 2007-11-28 | 2009-06-03 | 三星电子株式会社 | Light emitting diode package, method for fabricating the same and backlight assembly including the same |
| CN201508851U (en) * | 2009-09-04 | 2010-06-16 | 复盛股份有限公司 | LED bracket structure |
| CN102163655A (en) * | 2010-12-31 | 2011-08-24 | 东莞市万丰纳米材料有限公司 | Preparation method of LED (light-emitting diode) packaging module |
| CN102201525A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light emitting device package and lighting system having the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012084810A (en) * | 2010-10-14 | 2012-04-26 | Toppan Printing Co Ltd | Lead frame substrate for led element and light emitting element |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447477A (en) * | 2007-11-28 | 2009-06-03 | 三星电子株式会社 | Light emitting diode package, method for fabricating the same and backlight assembly including the same |
| CN201508851U (en) * | 2009-09-04 | 2010-06-16 | 复盛股份有限公司 | LED bracket structure |
| CN102201525A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light emitting device package and lighting system having the same |
| CN102163655A (en) * | 2010-12-31 | 2011-08-24 | 东莞市万丰纳米材料有限公司 | Preparation method of LED (light-emitting diode) packaging module |
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