CN103035738A - Silicon plastic packaging patch diode - Google Patents

Silicon plastic packaging patch diode Download PDF

Info

Publication number
CN103035738A
CN103035738A CN 201110299578 CN201110299578A CN103035738A CN 103035738 A CN103035738 A CN 103035738A CN 201110299578 CN201110299578 CN 201110299578 CN 201110299578 A CN201110299578 A CN 201110299578A CN 103035738 A CN103035738 A CN 103035738A
Authority
CN
China
Prior art keywords
electrode
chip
ceramic substrate
diode
silicon plastic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 201110299578
Other languages
Chinese (zh)
Inventor
孔明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN 201110299578 priority Critical patent/CN103035738A/en
Publication of CN103035738A publication Critical patent/CN103035738A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The invention relates to a semiconductor element, in particular to a silicon plastic packaging patch diode which comprises a diode body and a packaging casing, wherein the diode body comprises a ceramic substrate arranged in the packaging casing, a back electrode, a surface electrode, a chip, an upper layer electrode and end electrodes, wherein the back electrode and the surface electrode are respectively printed on the back surface and the front surface of the ceramic substrate, the chip is bonded on the surface electrode, the upper layer electrode is arranged at the position above the protruding point at the top end of the chip, insulating protective glue is covered on the upper layer electrode, the end electrodes which are fractured into strip shape and arranged outside the packaging casing are arranged on two sides of the ceramic substrate, and the tail ends of the end electrodes are fractured to be granular. The silicon plastic package patch diode has the advantages of being small in size, light in weight, high in assembling density, free of leads, stable in electrical performance, high in reliability, favorable for being high in frequency and speed and capable of being matched with an automatic pasting device.

Description

The silicon plastic packaging patch diode
Technical field
The present invention relates to a kind of semiconductor device, especially a kind of silicon plastic packaging patch diode.
Background technology
At present in the industry, the diode product is mainly take the tubulose packing forms as main, but this profile has many shortcomings: in pickup, mount, in the process such as welding, the phenomenon such as material casting occurs easily, break, production efficiency is low, is not easy to high volume applications; Exist thermal coefficient of expansion not mate phenomenon, cause easily thermal mismatching and injury, reliability decrease; The bend resistance insufficient strength of product; The scarce capacity that the resisting temperature of the product of glass packaging is impacted causes breaking of product easily.Along with electronic product to lighter element, little, thin demand, the silicon plastic packaging patch diode is as a kind of new component of cost performance brilliance, it bring far-reaching influence will for its application.
Summary of the invention
The technical problem to be solved in the present invention is: based on the problems referred to above, the invention provides a kind of profile than plastic packaging Guan Gengxiao, manufacture process is easier, the silicon plastic packaging patch diode of performance high-quality.
The technical solution adopted for the present invention to solve the technical problems is: a kind of silicon plastic packaging patch diode is provided; comprise diode body and package casing; described diode body comprises the ceramic substrate that is positioned at package casing; backplate; facial electrode; chip; upper electrode and termination electrode; the back side of described ceramic substrate and front are printed with respectively backplate and facial electrode; be adhesive with chip on the facial electrode; salient point top position, chip top is upper electrode; be coated with insulation protection glue on the upper electrode; the ceramic substrate both sides be provided with jackknifing into strips be positioned at the outer termination electrode of package casing, termination electrode has the end that fractures and granulate.
The end surface of described termination electrode is the soldering-tin layer metal.
The raw material of described package casing is the flame retardant epoxy material.
The invention has the beneficial effects as follows: volume of the present invention is little, lightweight, and packaging density is high, without lead-in wire, and electric performance stablity, reliability is high, is conducive to high frequency, high speed, and can be sticked for being complementary with automatic mounting.
Description of drawings
The present invention is further described below in conjunction with accompanying drawing embodiment.
Fig. 1 is structural representation of the present invention.
Fig. 2 is the internal structure schematic diagram of Fig. 1.
Among the figure: 1. diode body, 2. package casing, 3. ceramic substrate, 4. backplate, 5. facial electrode, 6. chip, 7. upper electrode, 8. termination electrode, 9. insulation protection glue.
Embodiment
The invention will be further described in conjunction with specific embodiments now, and following examples are intended to illustrate the present invention rather than limitation of the invention further.
Silicon plastic packaging patch diode shown in Fig. 1~2; comprise diode body 1 and package casing 2; diode body 1 comprises the ceramic substrate 3 that is positioned at package casing 2; backplate 4; facial electrode 5; chip 6; upper electrode 7 and termination electrode 8; the back side of ceramic substrate 3 and front are printed with respectively backplate 4 and facial electrode 5; be adhesive with chip 6 on the facial electrode 5; salient point top position, chip 6 top is upper electrode 7; be coated with insulation protection glue 9 on the upper electrode 7; ceramic substrate 3 both sides be provided with jackknifing into strips be positioned at the outer termination electrode 8 of package casing 2, termination electrode 8 has the end that fractures and granulate.
The end surface of termination electrode 8 is the soldering-tin layer metal.
The raw material of package casing 2 is the flame retardant epoxy material.
Take above-mentioned foundation desirable embodiment of the present invention as enlightenment, by above-mentioned description, the relevant staff can in the scope that does not depart from this invention technological thought, carry out various change and modification fully.The technical scope of this invention is not limited to the content on the specification, must determine its technical scope according to the claim scope.

Claims (3)

1. silicon plastic packaging patch diode; comprise diode body (1) and package casing (2); it is characterized in that: described diode body (1) comprises the ceramic substrate (3) that is positioned at package casing (2); backplate (4); facial electrode (5); chip (6); upper electrode (7) and termination electrode (8); the back side of described ceramic substrate (3) and front are printed with respectively backplate (4) and facial electrode (5); be adhesive with chip (6) on the facial electrode (5); salient point top position, chip (6) top is upper electrode (7); be coated with insulation protection glue (9) on the upper electrode (7); ceramic substrate (3) both sides be provided with jackknifing into strips be positioned at the outer termination electrode (8) of package casing (2), termination electrode (8) has the end that fractures and granulate.
2. silicon plastic packaging patch diode according to claim 1, it is characterized in that: the end surface of described termination electrode (8) is the soldering-tin layer metal.
3. silicon plastic packaging patch diode according to claim 1, it is characterized in that: the raw material of described package casing (2) is the flame retardant epoxy material.
CN 201110299578 2011-09-30 2011-09-30 Silicon plastic packaging patch diode Pending CN103035738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201110299578 CN103035738A (en) 2011-09-30 2011-09-30 Silicon plastic packaging patch diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201110299578 CN103035738A (en) 2011-09-30 2011-09-30 Silicon plastic packaging patch diode

Publications (1)

Publication Number Publication Date
CN103035738A true CN103035738A (en) 2013-04-10

Family

ID=48022437

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201110299578 Pending CN103035738A (en) 2011-09-30 2011-09-30 Silicon plastic packaging patch diode

Country Status (1)

Country Link
CN (1) CN103035738A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112839437A (en) * 2020-12-31 2021-05-25 广州金升阳科技有限公司 Double-sided plastic package power supply product

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112839437A (en) * 2020-12-31 2021-05-25 广州金升阳科技有限公司 Double-sided plastic package power supply product

Similar Documents

Publication Publication Date Title
CN102593276A (en) Light emitting diode die-bonding with magnetic field
CN102347418A (en) Light-emitting diode packaging structure and manufacturing method thereof
CN102222625A (en) Manufacturing method of light-emitting diode (LED) packaging structure and base thereof
US20130062783A1 (en) Chip packaging structure and manufacturing method for the same
CN102903705B (en) Light emitting diode packaging structure and manufacturing method thereof
CN102856468B (en) Light emitting diode packaging structure and manufacturing method thereof
CN201226592Y (en) Silicon microphone packaged by flexible circuit board
CN103943763B (en) A kind of encapsulating structure and method of flip LED chips
CN101958387A (en) Novel LED light resource module packaging structure
CN103035738A (en) Silicon plastic packaging patch diode
CN202259317U (en) Silicon plastic packaging patch diode
CN103337496B (en) Based on LED integrated encapsulation structure and the making method of two-sided silicon substrate
CN103000780B (en) A kind of LED chip encapsulating structure and manufacture method, display unit
CN202662615U (en) Axial diode
CN203377261U (en) Light emitting diode (LED) packaging support and LED packaging structure
CN203466188U (en) Novel bar-shaped COB device
CN102403413B (en) LED (Light-Emitting Diode) heat dissipation base plate, LED packaging structure, and manufacturing method of LED heat dissipation base plate and LED packaging structure
CN104934517A (en) Low-thermal-resistance surface mounted LED packaging structure and method
CN102810617A (en) Light emitting diode encapsulating structure and manufacturing method thereof
CN105070813A (en) Large-power LED support and packaging method thereof
CN202259312U (en) Electronic diode
CN202405315U (en) High-power LED packaging structure
CN102005445A (en) Encapsulation structure of light emitting diode (LED) light source module
CN203871318U (en) Dual-layer wire rack structure
CN203351666U (en) Led module

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130410