CN103031533B - A kind of can the atomic layer deposition apparatus of real time data processing - Google Patents
A kind of can the atomic layer deposition apparatus of real time data processing Download PDFInfo
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- CN103031533B CN103031533B CN201110300813.9A CN201110300813A CN103031533B CN 103031533 B CN103031533 B CN 103031533B CN 201110300813 A CN201110300813 A CN 201110300813A CN 103031533 B CN103031533 B CN 103031533B
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Abstract
The present invention relates to a kind of semiconductor manufacturing equipment, especially relate to a kind of can the atomic layer deposition apparatus of real time data processing.Described atomic layer deposition apparatus, comprises vacuum component, heater block, gas path component, plasma-generating component and function unit; Described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma-generating component respectively.The present invention, by adopting computer and data processing module, improves the processing speed of atomic layer deposition apparatus, and reduce equipment failure, make whole device structure simple and clear, the relation between all parts becomes simple, is convenient to assembling, produces and safeguard.
Description
Technical field
The present invention relates to a kind of semiconductor manufacturing equipment, especially relate to a kind of can the atomic layer deposition apparatus of real time data processing.
Background technology
Traditional atomic layer deposition apparatus comprises vacuum component, heater block, gas path component, plasma-generating component and function unit, is interconnected, realizes the transmission and reception of data command between function unit and other each parts.But, function unit many employings computer of atomic layer deposition apparatus realizes, and computer needs and all parts is contacted directly, and provides adapter according to the input/output interface of each parts, then the mutual of data command is completed according to certain communication protocol, as shown in Figure 1.
But, the control texture of existing atomic layer deposition apparatus adopts multiple data transmission interface and device, computer needs coordinate and dispatch multiple control device, steering order may be caused not complete in real time, thus affect the veneer effect of atomic layer deposition apparatus.In addition, in atomic layer deposition apparatus operational process, need the data constantly obtaining and analyze each parts, and the deposition growing of film (or thin layer) requires that the processing speed of atomic layer deposition apparatus is fast as far as possible, otherwise the film (or thin layer) expected cannot be obtained, because existing atomic layer deposition apparatus adopts computer interface direct communication to control, computer receiving data, certain gap is there is in analyzing and processing data with the transmission speed of director data and the processing speed required by deposition growing of film (or thin layer), and constantly reduce along with the thickness of thin layer, the continuous complexity of atomic layer deposition apparatus structure, this gap can be increasing, atomic layer deposition apparatus is finally caused to lose efficacy.
Summary of the invention
The object of the present invention is to provide a kind of can the atomic layer deposition apparatus of real time data processing, described device data processing speed is fast, and fault is few, simple for structure clear, is convenient to assembling, produces and safeguard.
In order to achieve the above object, the technical solution used in the present invention is:
Can the atomic layer deposition apparatus of real time data processing, comprise vacuum component, heater block, gas path component, plasma-generating component and function unit; Described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma-generating component respectively;
Wherein, described computer, for indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module and other parts of equipment are controlled, and receive director data from data processing module, the director data received is analyzed; Described data processing module, processes for the data sent described vacuum component, heater block, gas path component, plasma-generating component.
In such scheme, the temperature controller in described heater block is connected with described data processing module by RS232 serial ports.
In such scheme, the pressure transmitter in described vacuum component is connected with described data processing module respectively by RS232 with RS485 serial ports with vacuumometer.
In such scheme, described data processing module is connected with the electric current and voltage amplification module in described vacuum component, and described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
In such scheme, described data processing module is connected with the radio-frequency power supply in described plasma-generating component.
In such scheme, described data processing module is connected with the mass flow controller in described gas path component and each magnetic valve.
Compared with prior art, the beneficial effect that the technical solution used in the present invention produces is as follows:
The present invention, by adopting computer and data processing module, improves the processing speed of atomic layer deposition apparatus, and reduce equipment failure, make whole device structure simple and clear, the relation between all parts becomes simple, is convenient to assembling, produces and safeguard.
Accompanying drawing explanation
Fig. 1 is the functional block diagram of sublayer, prior art Central Plains depositing device;
The functional block diagram of the atomic layer deposition apparatus that Fig. 2 provides for the embodiment of the present invention;
The structure iron of the atomic layer deposition apparatus that Fig. 3 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, technical solution of the present invention is described in detail.
As shown in Figure 2, the embodiment of the present invention provide a kind of can the atomic layer deposition apparatus of real time data processing, comprise vacuum component, heater block, gas path component, plasma-generating component and function unit.Function unit comprises computer 25 and data processing module 26, and computer 25 is connected with data processing module 26, and data processing module 26 is connected with vacuum component, heater block, gas path component, plasma-generating component respectively.Wherein, computer 25, for indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module and other parts of equipment are controlled, and receive director data from data processing module, the director data received is analyzed; Data processing module 26, processes for the data sent vacuum component, heater block, gas path component, plasma-generating component.
The present invention, on the basis of computer 25, adds data processing module 26, and for processing data real-time, object is the computing pressure alleviating computer, improves equipment travelling speed.
Computer 25 is as the control axis in atomic layer deposition apparatus, red-tape operati is carried out to the vacuum component of atomic layer deposition apparatus, heater block, gas path component, plasma-generating component, information interchange between operating device all parts, it is the dispatching center of whole equipment, the major portion of the data processing related in the equipment of being responsible for, the request of instruction analysis and transmission in finishing equipment, reception and other parts of process, realize controlling functions, guarantee equipment well runs.
Data processing module 26 is as the auxiliary data processing enter in atomic layer deposition apparatus, the data that the responsible vacuum component to atomic shell equipment, heater block, gas path component, plasma-generating component send process, concrete data processor is have cured in data processing module, by analyzing the request of all parts, enable corresponding handling procedure, real-time return result.Before this, the work done is needed to be carry out detailed analysis to the task of all relating to data processing in atomic layer deposition apparatus, to only need calculation result and the data processing type of delay process can distribute to data processing module, other task then all needs to be completed by computer.Data processing module is except carrying out data processing, also can be used as the vacuum component of atomic shell equipment, heater block, gas path component, the passage that exchanges between plasma-generating component and computer, data processing module directly can send the request not relating to data processing in these four parts to computer, response results responsively, is sent to other parts by data processing module by computer.Data processing module has powerful data processing function, share computer transmission, receive instruction and data and the calculating pressure to instruction, data analysis process, bear the operation of the processing data in a big chunk atomic shell equipment running process, make computer can be absorbed in the operation coordinated and control between vacuum component, heater block, gas path component, plasma-generating component, allow atomic layer deposition apparatus stablize work fast, meet the processing speed required by deposition growing of film (or thin layer).
As shown in Figure 3, Computer 25 of the present invention is connected with data processing module 26, computer 25 is for indicating system operation interface, reception external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module 26 and other parts of equipment are controlled, and receive director data from data processing module 26, the director data received is analyzed, coordinates and control whole atomic layer deposition apparatus and operate in normal operating conditions.Temperature controller 24 in heater block is connected with data processing module 26 by RS232 serial ports, pressure transmitter in vacuum component is connected with data processing module 26 respectively by RS232 with RS485 serial ports with vacuumometer 27, data processing module 26 exchanges treatment channel as radio-frequency power supply 16, mass flow controller 1, mass flow controller 23, electric current and voltage amplification module 29 with the data message of data processing module 26, make whole function unit clear in structure, be convenient to produce.Data processing module 26 is connected with electric current and voltage amplification module 29, and electric current and voltage amplification module 29 is connected with rly. 28, and rly. 28 lower end is pump group power supply 22.Data processing module 26 is connected with magnetic valve 2 to the magnetic valve 9 in gas path component.
When using of the present invention, first start-up simulation machine 25, enter atomic layer deposition apparatus Controlling System interface, this interface comprises atomic layer deposition apparatus operation instruction file, the skeleton construction schematic diagram of system, the operational process of animation display atomic layer deposition apparatus, atomic layer deposition apparatus master routine, carries out setting and display in real time by the controling parameters of computer 25 pairs of equipment.After optimum configurations, operating device is completed following operation by computer 25:
(1) computer 25 sends open command by data processing module 26, supply current amplification module 29 output HIGH voltage, the connection of relay 28, and then opens control pump group power supply 22, starts mechanical pump 21 and molecular pump 20.Data processing module 26 is connected with magnetic valve 2 to the magnetic valve 9 in gas path component, being to regulate gas path on-off to the control of magnetic valve 2 to magnetic valve 5, is the break-make in order to regulate bottle 10 to source, the source bottle 13 in gas path component to the control of magnetic valve 6 to magnetic valve 9 respectively.The instruction of computer 25, data are sent in mass flow controller and magnetic valve by data processing module 26, open manually-operated gate 14 and manually-operated gate 15, bleed to sediment chamber 19 and pipeline, take out base vacuum (about to 5 × 10
-4torr); The temperature information that data processing module 26 pairs of temperature controllers 24, thermopairs provide carries out analyzing and processing, result is returned to computer 25, the temperature of heating plate, source bottle, pipeline, chamber wall monitored by computer 25, determine that each parts to be heated continue heating or stop heating, make them be operated in the state of temperature of setting, complete the control to gas path component, heater block.
(2) under meter size is set by computer 25, and preserve this value, open mass flow controller 1, mass flow controller 23, magnetic valve 2, magnetic valve 3, gas 30, gas 31 will enter gas circuit, inflate gas path component, computer 25 pairs of system pressures are monitored, in real time when system reaches required operating pressure, close above-mentioned mass flow controller and magnetic valve, stop inflation.
(3) parameter required for deposition work is set, computer 25 is by the order of parameter access control, be sent to data processing module 26, data processing module 26 is as information channel, the instruction of computer 25 is sent in the receiving-member of radio-frequency power supply 16, control the unlatching of radio-frequency power supply 16 and the setting to output rating, meanwhile, radio-frequency power supply matching box 17 ensures that radio-frequency power supply 16 provides stable power for plasma production system 18.The output rating of radio-frequency power supply 16 feeds back to computer 25 as the quantities received of data processing module 26, computer 25 is analyzed this power, to make the plasma production system 18 in plasma-generating component be operated in stable state, thus complete the control of plasma production part and deposit.
(4) after deposition terminates, computer 25 controls n the cycle of whole equipment dry running, carries out purging purification, sends instruction, open magnetic valve 5 to magnetic valve 9, open bottle 10 to source, source bottle 13, purify sediment chamber 19 atomic layer deposition apparatus.
(5), after purging terminates, bolt down procedure, completes whole work of ald.
In the present invention, data processing module have selected the dsp chip TMS320C6748 of Texas Instruments, this chip adopts the C6000 treater of least cost and lowest power consumption, the treater of integrated SATA, mass data storage can be supported, C674x kernel up to 300MHz provides floating-point work capacity for high precision and wide dynamic range, the work requirements meeting equipment that can be fabulous, makes the control performance of computer better be showed.
In sum, the present invention, by adopting computer and data processing module, improves the processing speed of atomic layer deposition apparatus, reduce equipment failure, make whole device structure simple and clear, the relation between all parts becomes simple, is convenient to assembling, produces and safeguard.The present invention, when carrying out ald, can guarantee the operation that atomic layer deposition apparatus is reliable and stable, and have interlock function, can effectively prevention system can cause under improper operation performance damage, arithmetic speed also can meet the demand of sedimentation experiment.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. can the atomic layer deposition apparatus of real time data processing, comprise vacuum component, heater block, gas path component, plasma-generating component and function unit, it is characterized in that: described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma-generating component respectively;
Wherein, described computer, for indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module and other parts of described equipment are controlled, and receive director data from data processing module, the director data received is analyzed;
Described data processing module, data for sending described vacuum component, heater block, gas path component, plasma-generating component process, and described data processing module directly sends the request not relating to data processing in described vacuum component, heater block, gas path component, plasma-generating component to computer;
Wherein, the temperature controller in described heater block is connected with described data processing module by RS232 serial ports;
Wherein, the pressure transmitter in described vacuum component is connected with described data processing module respectively by RS232 with RS485 serial ports with vacuumometer;
Wherein, described data processing module is connected with the electric current and voltage amplification module in described vacuum component, and described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply;
Wherein, described data processing module is connected with the radio-frequency power supply in described plasma-generating component;
Wherein, described data processing module is connected with the mass flow controller in described gas path component and each magnetic valve.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101715602A (en) * | 2007-06-04 | 2010-05-26 | 东京毅力科创株式会社 | Film build method and film formation device |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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| CN101285788B (en) * | 2008-05-20 | 2011-10-12 | 中山大学 | Pyroelectric material measuring apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101715602A (en) * | 2007-06-04 | 2010-05-26 | 东京毅力科创株式会社 | Film build method and film formation device |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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