CN103031533A - Atomic layer deposition device capable of processing data in real time - Google Patents

Atomic layer deposition device capable of processing data in real time Download PDF

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Publication number
CN103031533A
CN103031533A CN2011103008139A CN201110300813A CN103031533A CN 103031533 A CN103031533 A CN 103031533A CN 2011103008139 A CN2011103008139 A CN 2011103008139A CN 201110300813 A CN201110300813 A CN 201110300813A CN 103031533 A CN103031533 A CN 103031533A
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data processing
processing module
atomic layer
layer deposition
component
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CN2011103008139A
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CN103031533B (en
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王燕
李勇滔
夏洋
赵章琰
石莎莉
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Abstract

The invention relates to semiconductor processing equipment and in particular to atomic layer deposition equipment capable of processing data in real time. The atomic layer deposition equipment comprises a vacuum component, a heating component, an air channel component, a plasma generating component and a control component, wherein the control component comprises a computer and a data processing module; the computer is connected with the data processing module; and the data processing module is respectively connected with the vacuum component, the heating component, the air channel component and the plasma generating component. With the adoption of the atomic layer deposition equipment, the computer and the data processing module are adopted, the processing speed of the atomic layer deposition equipment is improved, the equipment failure is reduced, the whole equipment is concise and distinct in structure; the relation among the components becomes simple; and the atomic layer deposition equipment is convenient to assemble, produce and maintain.

Description

But a kind of atomic layer deposition apparatus of real time data processing
Technical field
The present invention relates to a kind of semiconductor manufacturing equipment, but especially relate to a kind of atomic layer deposition apparatus of real time data processing.
Background technology
Traditional atomic layer deposition apparatus comprises vacuum component, heater block, gas path component, plasma generation parts and function unit, interconnects between function unit and other each parts, realizes sending and receiving of data command.Yet, the function unit of atomic layer deposition apparatus adopts computer realization more, and computer needs and all parts is contacted directly, and provides adapter according to the input/output interface of each parts, then finish the mutual of data command according to certain communication protocol, as shown in Figure 1.
But, the control texture of existing atomic layer deposition apparatus adopts a plurality of data transmission interfaces and device, a plurality of control devices need to be coordinated and dispatch to computer, may cause steering order not finish in real time, thereby affect the veneer effect of atomic layer deposition apparatus.In addition, in the atomic layer deposition apparatus operational process, need to constantly obtain and analyze the data of each parts, and the deposition growing of film (or thin layer) requires the processing speed of atomic layer deposition apparatus fast as far as possible, otherwise the film that can't obtain expecting (or thin layer), because existing atomic layer deposition apparatus adopts computer interface direct communication control, computer receiving data, there are certain gap in the speed of analyzing and processing data and transmission director data and the desired processing speed of deposition growing of film (or thin layer), and along with the thickness of thin layer constantly reduces, the continuous complexity of atomic layer deposition apparatus structure, this gap can be increasing, finally causes atomic layer deposition apparatus to lose efficacy.
Summary of the invention
But the object of the present invention is to provide a kind of atomic layer deposition apparatus of real time data processing, described device data processing speed is fast, and fault is few, and is simple for structure clear, is convenient to assembling, produces and safeguards.
In order to achieve the above object, the technical solution used in the present invention is:
But a kind of atomic layer deposition apparatus of real time data processing comprises vacuum component, heater block, gas path component, plasma generation parts and function unit; Described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma generation parts respectively;
Wherein, described computer, be used for the indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data and other parts of equipment are controlled to data processing module, and from data processing module reception director data, the director data that receives is analyzed; Described data processing module is used for the data that described vacuum component, heater block, gas path component, plasma generation parts send are processed.
In the such scheme, the temperature controller in the described heater block is connected with described data processing module by the RS232 serial ports.
In the such scheme, the pressure transmitter in the described vacuum component is connected with vacuumometer by RS232 and is connected with described data processing module with the RS485 serial ports.
In the such scheme, described data processing module connects with the electric current and voltage amplification module of being connected in the vacuum component, and described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
In the such scheme, described data processing module is connected with radio-frequency power supply in the described plasma generation parts.
In the such scheme, described data processing module links to each other with mass flow controller and each magnetic valve in the described gas path component.
Compare with the prior art scheme, the beneficial effect that the technical solution used in the present invention produces is as follows:
The present invention has improved the processing speed of atomic layer deposition apparatus by adopting computer and data processing module, reduces equipment failure, so that whole device structure simple and clear, the relation between all parts becomes simply, is convenient to assembling, produces and safeguards.
Description of drawings
Fig. 1 is the functional block diagram of sublayer, prior art Central Plains depositing device;
The functional block diagram of the atomic layer deposition apparatus that Fig. 2 provides for the embodiment of the invention;
The structure iron of the atomic layer deposition apparatus that Fig. 3 provides for the embodiment of the invention.
Embodiment
Below in conjunction with drawings and Examples technical solution of the present invention is described in detail.
As shown in Figure 2, but the embodiment of the invention provides a kind of atomic layer deposition apparatus of real time data processing, comprises vacuum component, heater block, gas path component, plasma generation parts and function unit.Function unit comprises computer 25 and data processing module 26, and computer 25 is connected with data processing module 26, and data processing module 26 is connected with vacuum component, heater block, gas path component, plasma generation parts respectively.Wherein, computer 25, be used for the indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data and other parts of equipment are controlled to data processing module, and from data processing module reception director data, the director data that receives is analyzed; Data processing module 26 is used for the data that vacuum component, heater block, gas path component, plasma generation parts send are processed.
The present invention has added data processing module 26 on the basis of computer 25, be used for real-time processing data, and purpose is the computing pressure of alleviating computer, improves the equipment travelling speed.
Computer 25 is as the control axis in the atomic layer deposition apparatus, vacuum component, heater block, gas path component, plasma generation parts to atomic layer deposition apparatus carry out red-tape operati, information interchange between the operating device all parts, it is the dispatching center of whole equipment, the major portion of the data processing that relates in the equipment of being responsible for, the request of instruction analysis and transmission in the finishing equipment, reception and other parts of processing realizes the control function, and assurance equipment well moves.
Data processing module 26 is as the auxiliary data processing enter in the atomic layer deposition apparatus, the data that responsible vacuum component to atomic shell equipment, heater block, gas path component, plasma generation parts send are processed, solidified concrete data processor in the data processing module, by analyzing the request of all parts, enable corresponding handling procedure, real-time return result.Before this, the work that need to do is that the task of all relating to data processing in the atomic layer deposition apparatus is carried out detailed analysis, to only need calculation result and data processing type that can delay process to distribute to data processing module, other task then all need to be finished by computer.Data processing module is except carrying out data processing, also can be used as the passage that exchanges between vacuum component, heater block, gas path component, plasma generation parts and the computer of atomic shell equipment, data processing module can directly send the request that does not relate to data processing in these four parts to computer, computer sends to other parts with response results by data processing module as response.Data processing module has powerful data processing function, the calculating pressure of having shared the computer transmission, having received instruction and data and instruction, data analysis are processed, bear the operation of the processing data in a big chunk atomic shell equipment running process, computer can be absorbed in coordinate and control vacuum component, heater block, gas path component, plasma generation parts between operation, allow atomic layer deposition apparatus stablize and work fast, satisfy the desired processing speed of deposition growing of film (or thin layer).
As shown in Figure 3, Computer 25 of the present invention is connected connection with data processing module, computer 25 is used for the indicating system operation interface, receives external command, the operating parameter of each parts of indicating system, send operating instructions and data and other parts of equipment are controlled to data processing module 26, and from data processing module 26 reception director datas, the director data that receives is analyzed, coordinated and control whole atomic layer deposition apparatus to operate in normal operating conditions.Temperature controller 24 in the heater block is connected with data processing module 26 by the RS232 serial ports, pressure transmitter in the vacuum component is connected with vacuumometer and is connected with data processing module 26 with the RS485 serial ports by RS232 respectively, data processing module 26 exchanges treatment channel as radio-frequency power supply 16, mass flow controller 1, mass flow controller 23, electric current and voltage amplification module 29 and the data message of data processing module 26, so that whole function unit clear in structure is convenient to produce.Data processing module 26 is connected connection with the electric current and voltage amplification module, electric current and voltage amplification module 29 is connected connection with rly., and rly. 28 lower ends are pump group power supply 22.Data processing module 26 links to each other with magnetic valve 2 to magnetic valve 9 in the gas path component.
Use when of the present invention, start first computer 25, enter atomic layer deposition apparatus Controlling System interface, this interface comprises skeleton construction synoptic diagram, the operational process of animation display atomic layer deposition apparatus, the atomic layer deposition apparatus master routine of atomic layer deposition apparatus operation instruction file, system, and the control parameter by 25 pairs of equipment of computer arranges and shows in real time.Parameter after setting completed, computer 25 is finished following operation with operating device:
(1) computer 25 sends open command by data processing module 26, supply current amplification module 29 output HIGH voltages, and the connection of relay 28, and then open control pump group power supply 22, start mechanical pump 21 and molecular pump 20.Data processing module 26 links to each other with magnetic valve 2 to magnetic valve 9 in the gas path component, being in order to regulate gas path on-off to magnetic valve 2 to the control of magnetic valve 5, is respectively in order to regulate source bottle 10 in the gas path component to the break-make of source bottle 13 to magnetic valve 6 to the control of magnetic valve 9.Data processing module 26 is sent to instruction, the data of computer 25 in mass flow controller and the magnetic valve, opens manually-operated gate 14 and manually-operated gate 15, is bled in sediment chamber 19 and pipeline, takes out base vacuum (approximately to 5 * 10 -4Torr); The temperature information that data processing module 26 pairs of temperature controllers 24, thermopairs provide carries out analyzing and processing, the result is returned to computer 25, the temperature of computer 25 monitoring heating plates, source bottle, pipeline, chamber wall, determine that each parts to be heated continue heating or stopped heating, make them be operated in the state of temperature of setting, finish the control to gas path component, heater block.
(2) by computer 25 the under meter size is set, and preserve this value, open mass flow controller 1, mass flow controller 23, magnetic valve 2, magnetic valve 3, gas 30, gas 31 will enter gas circuit, gas path component is inflated, and 25 pairs of system pressure Real Time Monitorings of computer are when system reaches required operating pressure, close above-mentioned mass flow controller and magnetic valve, stop inflation.
(3) the needed parameter of deposition work is set, computer 25 is with in the order of parameter access control, send to data processing module 26, data processing module 26 is as information channel, the instruction of computer 25 is sent in the receiving-member of radio-frequency power supply 16, the unlatching of control radio-frequency power supply 16 and to the setting of output rating, simultaneously, radio-frequency power supply matching box 17 guarantees that radio-frequency power supplies 16 provide stable power for plasma generation system 18.The output rating of radio-frequency power supply 16 feeds back to computer 25 as the quantities received of data processing module 26,25 pairs of these power of computer are analyzed, so that the plasma generation system 18 in the plasma generation parts is operated in stable state, thereby finishes the control of plasma production part and deposit.
(4) after deposition finishes, 25 control n cycles of whole equipment dry running of computer, atomic layer deposition apparatus is purged purification, send instruction, open magnetic valve 5 to magnetic valve 9, unlatching source bottle 10 purifies sediment chamber 19 to source bottle 13.
(5) after purging finished, bolt down procedure was finished whole work of ald.
Data processing module has been selected the dsp chip TMS320C6748 of Texas Instruments among the present invention, this chip adopts the C6000 treater of least cost and lowest power consumption, the treater of integrated SATA, can support mass data storage, provide the floating-point work capacity up to the C674x kernel of 300 MHz for high precision and wide dynamic range, the work requirements that satisfies equipment that can be fabulous is better showed the control performance of computer.
In sum, the present invention has improved the processing speed of atomic layer deposition apparatus by adopting computer and data processing module, reduce equipment failure, so that whole device structure simple and clear, the relation between all parts becomes simply, is convenient to assembling, produces and safeguards.The present invention can guarantee the operation that atomic layer deposition apparatus is reliable and stable when carrying out ald, and has interlock function, the effectively prevention system performance damage that under improper operation, can cause, and arithmetic speed also can satisfy the demand of sedimentation experiment.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (6)

1. but the atomic layer deposition apparatus of a real time data processing comprises vacuum component, heater block, gas path component, plasma generation parts and function unit, and it is characterized in that: described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma generation parts respectively;
Wherein, described computer, be used for the indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data and other parts of described equipment are controlled to data processing module, and from data processing module reception director data, the director data that receives is analyzed;
Described data processing module is used for the data that described vacuum component, heater block, gas path component, plasma generation parts send are processed.
2. but the atomic layer deposition apparatus of real time data processing as claimed in claim 1 is characterized in that: the temperature controller in the described heater block is connected with described data processing module by the RS232 serial ports.
3. but the atomic layer deposition apparatus of real time data processing as claimed in claim 1 is characterized in that: the pressure transmitter in the described vacuum component is connected with vacuumometer by RS232 and is connected with described data processing module with the RS485 serial ports.
4. but the atomic layer deposition apparatus of real time data processing as claimed in claim 1, it is characterized in that: described data processing module connects with the electric current and voltage amplification module of being connected in the vacuum component, described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
5. but the atomic layer deposition apparatus of real time data processing as claimed in claim 1 is characterized in that: described data processing module is connected with radio-frequency power supply in the described plasma generation parts.
6. but the atomic layer deposition apparatus of real time data processing as claimed in claim 1 is characterized in that: described data processing module links to each other with mass flow controller and each magnetic valve in the described gas path component.
CN201110300813.9A 2011-09-29 2011-09-29 A kind of can the atomic layer deposition apparatus of real time data processing Active CN103031533B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114300333A (en) * 2021-11-22 2022-04-08 北京北方华创微电子装备有限公司 Radio frequency power supply control system, method and semiconductor process equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101285788A (en) * 2008-05-20 2008-10-15 中山大学 Pyroelectric material measuring apparatus
CN101715602A (en) * 2007-06-04 2010-05-26 东京毅力科创株式会社 Film build method and film formation device
CN102127756A (en) * 2011-02-21 2011-07-20 东华大学 Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101715602A (en) * 2007-06-04 2010-05-26 东京毅力科创株式会社 Film build method and film formation device
CN101285788A (en) * 2008-05-20 2008-10-15 中山大学 Pyroelectric material measuring apparatus
CN102127756A (en) * 2011-02-21 2011-07-20 东华大学 Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114300333A (en) * 2021-11-22 2022-04-08 北京北方华创微电子装备有限公司 Radio frequency power supply control system, method and semiconductor process equipment
CN114300333B (en) * 2021-11-22 2024-01-05 北京北方华创微电子装备有限公司 Radio frequency power supply control system, method and semiconductor process equipment

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