CN103046024B - A kind of atomic layer deposition apparatus of anti-return and using method thereof - Google Patents
A kind of atomic layer deposition apparatus of anti-return and using method thereof Download PDFInfo
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- CN103046024B CN103046024B CN201110310015.4A CN201110310015A CN103046024B CN 103046024 B CN103046024 B CN 103046024B CN 201110310015 A CN201110310015 A CN 201110310015A CN 103046024 B CN103046024 B CN 103046024B
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Abstract
The present invention relates to technical field of manufacturing semiconductors, especially relate to a kind of atomic layer deposition apparatus of anti-return.Described atomic layer deposition apparatus, comprises vacuum component, heater block, gas path component, plasma-generating component, function unit and sediment chamber; Gas path component comprises the first pipeline and second pipe, and the first pipeline and the end junction of second pipe are extended one section of common conduit and be connected with sediment chamber; First pipeline and second pipe are respectively equipped with a pair reacting gas source bottle and cleaning gas source bottle, and reacting gas source bottle is arranged on the one end near sediment chamber on the first pipeline and second pipe.The present invention also provides a kind of using method of atomic layer deposition apparatus of anti-return.Invention increases the utilization ratio of atomic layer deposition apparatus chemical reagent, reduce remaining reagent to the pollution of gaseous reagent, decrease flow excursion, effectively prevent gas backstreaming phenomenon, reduce cleaning gas residence time and removal time of chemical reagent simultaneously, reduce deposition reaction cycle time.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, especially relate to a kind of atomic layer deposition apparatus and using method thereof of anti-return.
Background technology
During atomic layer deposition apparatus work, a deposition cycle often comprises four-stage: the first chemical reaction gas enters sediment chamber's reaction, the first cleaning purge of gas sediment chamber, the second chemical reaction gas enters sediment chamber's reaction, the second cleaning purge of gas sediment chamber, at this four-stage, the process passing into gas and extracting gases all can be related to.Existing atomic layer deposition apparatus comprises the chemical reagent conveying arm of the synchronous actuating employing multiple valve, i.e. the first chemical reaction gas, first cleaning gas, second chemical reaction gas and the second cleaning gas are all positioned on same gas channels, each gas source bottle is by corresponding Valve controlling, in such a system, because valve itself can not realize synchronously activating completely, therefore, can not really accomplish to eliminate flow excursion, and these inevitable flow excursions can reflux, produce the disadvantageous chemical reagent mixing of deposited product quality, affect the deposition effect of device.Existing structure as shown in Figure 1.
In order to improve the product performance of atomic layer deposition apparatus, eliminate flow excursion, reduce gas backstreaming as far as possible, avoid the pollution of chemical reagent to depositing the detrimentally affect brought, need to redesign the structure for conveying of the reactant gases of traditional atomic layer deposition apparatus, meet the requirement that device to be processed is more and more higher to deposition effect.
Summary of the invention
The object of the present invention is to provide a kind of atomic layer deposition apparatus of anti-return, reduce remaining reagent to the pollution of gaseous reagent, decrease flow excursion, effectively prevent gas backstreaming phenomenon.
Another object of the present invention is to the using method of the atomic layer deposition apparatus that a kind of anti-return is provided.
In order to achieve the above object, the technical solution used in the present invention is:
An atomic layer deposition apparatus for anti-return, comprises vacuum component, heater block, gas path component, plasma-generating component, function unit and sediment chamber; Described gas path component comprises the first pipeline and second pipe, and one section of common conduit is extended in the end junction of described first pipeline and described second pipe, and described common conduit is connected with described sediment chamber; Described first pipeline and described second pipe are respectively equipped with a pair reacting gas source bottle and cleaning gas source bottle, and described cleaning gas source bottle is arranged on the one end near described sediment chamber on described first pipeline and described second pipe.
In such scheme, described reacting gas source bottle and described cleaning gas source bottle are respectively equipped with the valve directly controlling respective sources bottle, pipeline between described reacting gas source bottle and described cleaning gas source bottle is provided with valve, and the junction of described first pipeline and described second pipe and described common conduit is respectively equipped with valve.
In such scheme, described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma-generating component respectively;
Wherein, described computer, for indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module and other parts of equipment are controlled, and receive director data from data processing module, the director data received is analyzed; Described data processing module, processes for the data sent described vacuum component, heater block, gas path component, plasma-generating component.
In such scheme, the temperature controller in described heater block is connected with described data processing module by RS232 serial ports.
In such scheme, the pressure transmitter in described vacuum component is connected with described data processing module respectively by RS232 with RS485 serial ports with vacuumometer.
In such scheme, described data processing module is connected with the electric current and voltage amplification module in described vacuum component, and described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
In such scheme, described data processing module is connected with the radio-frequency power supply in described plasma-generating component.
In such scheme, described data processing module is connected with the mass flow controller in described gas path component and each magnetic valve.
A using method for the atomic layer deposition apparatus of anti-return, comprises the steps:
Open the valve that gas reaction source bottle and gas on the by-pass valve control of gas reaction source bottle on gas path component first pipeline, described first pipeline clear up valve between the bottle of source and described first pipeline and common conduit junction, after sediment chamber's conveying chemical reaction gas to the amount of pre-setting, close above-mentioned valve;
After in described sediment chamber, the reaction of chemical reaction gas terminates, open the by-pass valve control of gas cleaning source bottle and the valve of described first pipeline and common conduit junction on described first pipeline, after pass into cleaning gas to the amount of pre-setting to described sediment chamber, close above-mentioned valve;
After cleaning in described sediment chamber, open the valve that gas reaction source bottle and gas on the by-pass valve control of gas reaction source bottle on described gas path component second pipe, described second pipe clear up valve between the bottle of source and described second pipe and described common conduit junction, after sediment chamber's conveying chemical reaction gas to the amount of pre-setting, close above-mentioned valve;
After in described sediment chamber, the reaction of chemical reaction gas terminates, open the by-pass valve control of gas cleaning source bottle and the valve of described second pipe and common conduit junction on described second pipe, after pass into cleaning gas to the amount of pre-setting to described sediment chamber, close above-mentioned valve.
Compared with prior art, the beneficial effect that the technical solution used in the present invention produces is as follows:
The present invention is by adopting two gas delivery channels and dual-valve structure, improve the utilization ratio of the chemical reagent of atomic layer deposition apparatus, reduce remaining reagent to the pollution of gaseous reagent, fabulous decreases flow excursion, effectively prevent gas backstreaming phenomenon, also can reduce the removal time of cleaning gas residence time and chemical reagent simultaneously, and then reduce deposition reaction cycle time.
Accompanying drawing explanation
Fig. 1 is the structural representation of sublayer, prior art Central Plains depositing device gas transmission pipeline;
The structural representation of the gas transmission pipeline of the atomic layer deposition apparatus that Fig. 2 provides for the embodiment of the present invention;
The system construction drawing of the atomic layer deposition apparatus that Fig. 3 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, technical solution of the present invention is described in detail.
The embodiment of the present invention provides a kind of atomic layer deposition apparatus of anti-return, comprises vacuum component, heater block, gas path component, plasma-generating component, function unit and sediment chamber.As shown in Figure 2, one section of common conduit 301 is extended in the end junction that gas path component comprises the first pipeline 101 and second pipe 201, first pipeline 101 and second pipe 201, and common conduit 301 is connected with sediment chamber 15.First pipeline 101 is provided with the first reacting gas source bottle 102 and the first cleaning gas source bottle 103, and second pipe 201 is provided with the second reacting gas source bottle 202 and the second cleaning gas source bottle 203.First cleaning gas source bottle 103 and the second cleaning gas source bottle 203 are separately positioned on the one end near sediment chamber 15 on the first pipeline 101 and second pipe 201.
Gas source bottle 103, second reacting gas source bottle 202 cleared up by first reacting gas source bottle 102, first and the second cleaning gas source bottle 203 is respectively equipped with the valve 104, valve 106, valve 204 and the valve 206 that directly control respective sources bottle; First reacting gas source bottle 102 and the first pipeline cleared up between gas source bottle 103 are provided with valve 105, second reacting gas source bottle 202 and the second pipeline cleared up between gas source bottle 203 are provided with valve 205, first pipeline 101 and are respectively equipped with valve 107 and valve 207 with second pipe 201 and the junction of common conduit 301.
The present invention adopts two channels transport of reactant gases body, effectively prevent the mixing of two kinds of reactant gasess, reduces the pollution of chemical reagent, reduces the usage quantity of chemical reagent, product quality and production efficiency are all improved.The present invention is on twin-channel basis, and each source bottle have employed double valve, after the conveying of corresponding chemical reaction reagent, close the double valve of gas, to avoid in pipeline remaining gas to enter public transport pipe, and follow other chemical reagent and enter sediment chamber, cause the pollution of reagent.
As shown in Figure 3, function unit comprises computer 21 and data processing module 22, and computer 21 is connected with data processing module 22, and data processing module 22 is connected with vacuum component, heater block, gas path component, plasma-generating component respectively.Wherein, computer 21, for indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module and other parts of equipment are controlled, and receive director data from data processing module, the director data received is analyzed; Data processing module 22, processes for the data sent vacuum component, heater block, gas path component, plasma-generating component.
Computer 21 is as the control axis in atomic layer deposition apparatus, red-tape operati is carried out to the vacuum component of atomic layer deposition apparatus, heater block, gas path component, plasma-generating component, information interchange between operating device all parts, it is the dispatching center of whole equipment, the major portion of the data processing related in the equipment of being responsible for, the request of instruction analysis and transmission in finishing equipment, reception and other parts of process, realize controlling functions, guarantee equipment well runs.
Data processing module 22 is as the auxiliary data processing enter in atomic layer deposition apparatus, the data that the responsible vacuum component to atomic shell equipment, heater block, gas path component, plasma-generating component send process, concrete data processor is have cured in data processing module 22, by analyzing the request of all parts, enable corresponding handling procedure, real-time return result.
Computer 21 of the present invention is connected with data processing module 22, computer 21 is for indicating system operation interface, reception external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module 22 and other parts of equipment are controlled, and receive director data from data processing module 22, the director data received is analyzed, coordinates and control whole atomic layer deposition apparatus and operate in normal operating conditions.Temperature controller 20 in heater block is connected with data processing module 22 by RS232 serial ports, pressure transmitter in vacuum component is connected with data processing module 22 respectively by RS232 with RS485 serial ports with vacuumometer 23, data processing module 22 exchanges treatment channel as radio-frequency power supply 12, mass flow controller 1, mass flow controller 19, electric current and voltage amplification module 25 with the data message of data processing module 22, make whole function unit clear in structure, be convenient to produce.Data processing module 22 is connected with electric current and voltage amplification module 25, and electric current and voltage amplification module 25 is connected with rly. 24, and rly. 24 lower end is pump group power supply 18.Data processing module 22 is connected with magnetic valve 2 to the magnetic valve 7 in gas path component.
The embodiment of the present invention also provides a kind of using method of atomic layer deposition apparatus of anti-return, comprises the steps:
(1) start-up simulation machine 21, enters atomic layer deposition apparatus Controlling System interface, arranges and estimates deposition reaction time and other working parameter of equipment;
(2) computer 21 sends open command by data processing module 22, supply current amplification module 25 output HIGH voltage, the connection of relay 24, and then opens control pump group power supply 18, starts mechanical pump 17 and molecular pump 16; Data processing module 22 is connected with magnetic valve 2 to the magnetic valve 7 in gas path component, being to regulate gas path on-off to the control of magnetic valve 2 to magnetic valve 5, is the break-make in order to regulate source bottle 8 in gas path component and source bottle 9 to the control of magnetic valve 6 and magnetic valve 7 respectively; The instruction of computer 21, data are sent in mass flow controller and magnetic valve by data processing module 22, open manually-operated gate 10 and manually-operated gate 11, bleed to sediment chamber 15 and pipeline, take out base vacuum (about to 5 × 10
-4torr); The temperature information that data processing module 22 pairs of temperature controllers 20, thermopairs provide carries out analyzing and processing, result is returned to computer 21, the temperature of heating plate, source bottle, pipeline, chamber wall monitored by computer 21, determine that each parts to be heated continue heating or stop heating, make them be operated in the state of temperature of setting, complete the control to gas path component, heater block;
(3) under meter size is set by computer 21, and preserve this value, open mass flow controller 1, mass flow controller 19, magnetic valve 2, magnetic valve 3, gas 26, gas 27 will enter gas circuit, inflate gas path component, computer 21 pairs of system pressures are monitored, in real time when system reaches required operating pressure, close above-mentioned mass flow controller and magnetic valve, stop inflation;
(4) parameter required for deposition work is set, computer 21 is by the order of parameter access control, be sent to data processing module 22, data processing module 22 is as information channel, the instruction of computer 21 is sent in the receiving-member of radio-frequency power supply 12, control the unlatching of radio-frequency power supply 12 and the setting to output rating, meanwhile, radio-frequency power supply matching box 13 ensures that radio-frequency power supply 12 provides stable power for plasma production system 14.The output rating of radio-frequency power supply 12 feeds back to computer 21 as the quantities received of data processing module 22, computer 21 is analyzed this power, to make the plasma production system 14 in plasma-generating component be operated in stable state, thus complete the control of plasma production part and deposit;
(5) valve 104 and the valve 105 of control first chemical reaction gas is opened, the valve 107 of the first cleaning gas near sediment chamber 15 is also in open mode simultaneously, chemical reagent is carried to sediment chamber 15, to the amount of pre-setting, control the first chemical reaction gas double valve to close, close the valve 107 of the nearly sediment chamber 15 of the first cleaning gas simultaneously; After the first chemical reaction gas reaction terminates, open valve 106 and valve 107 that gas is cleared up in control first, pass into cleaning gas to sediment chamber 15 to the amount of pre-setting, closing control first clears up the double valve of gas; Cleaning is complete, open valve 204 and the valve 205 of control second chemical reaction gas, open the valve 201 of the second cleaning gas near sediment chamber 15 simultaneously, the second chemical reaction gas is carried to sediment chamber 15, to the amount of pre-setting, the double valve controlling the second reactant gases is closed, and closes the valve 207 of the nearly sediment chamber 15 of the second cleaning gas simultaneously; After the second chemical reaction gas terminates, open valve 206 and valve 207 that gas is cleared up in control second, to sediment chamber 15 transferring cleaning gas to predetermined amount, closing control second clears up the double valve of gas;
(6) cleaning work is complete, and a deposition reaction end cycle, proceeds the work of above-mentioned steps (5), until deposition work completes;
(7) after deposition terminates, computer 21 controls n the cycle of whole equipment dry running, carries out purging purification, sends instruction, open magnetic valve 6 and magnetic valve 7, open source bottle 8 and source bottle 9, purify sediment chamber 15 atomic layer deposition apparatus.
(8), after purging terminates, bolt down procedure, completes whole work of ald.
The present invention is from the volume of sediment chamber, devise the chamber that can change volume in deposition cycle four-stage, effective change affects the factor volume V of gas residence time, although the change of V can cause the change of chamber pressure P, but compare the impact of volume change on the residence time, the impact of change on the time of pressure is less, thus can only consider that volume changes the result brought generally.
The present invention is by adopting two gas delivery channels and dual-valve structure, when carrying out ald, can guarantee that atomic layer deposition apparatus effectively reduces chemical reagent reflux problem, reduce flow excursion, prevent chemical reagent from polluting, improve the utilization ratio of chemical reagent, reduce reagent waste and tail gas pollution, and then reduce deposition reaction cycle time, thus improve deposition properties, obtain high-quality product.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the atomic layer deposition apparatus of an anti-return, comprise vacuum component, heater block, gas path component, plasma-generating component, function unit and sediment chamber, it is characterized in that: described gas path component comprises the first pipeline and second pipe, one section of common conduit is extended in the end junction of described first pipeline and described second pipe, and described common conduit is connected with described sediment chamber; Described first pipeline and described second pipe are respectively equipped with a pair reacting gas source bottle and cleaning gas source bottle, and described cleaning gas source bottle is arranged on the one end near described sediment chamber on described first pipeline and described second pipe;
Wherein, described reacting gas source bottle and described cleaning gas source bottle are respectively equipped with the valve directly controlling respective sources bottle, pipeline between described reacting gas source bottle and described cleaning gas source bottle is provided with valve, and the junction of described first pipeline and described second pipe and described common conduit is respectively equipped with valve;
Wherein, described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma-generating component respectively;
Wherein, described computer, for indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data to data processing module and other parts of equipment are controlled, and receive director data from data processing module, the director data received is analyzed; Described data processing module, processes for the data sent described vacuum component, heater block, gas path component, plasma-generating component.
2. the atomic layer deposition apparatus of anti-return as claimed in claim 1, is characterized in that: the temperature controller in described heater block is connected with described data processing module by RS232 serial ports.
3. the atomic layer deposition apparatus of anti-return as claimed in claim 1, is characterized in that: the pressure transmitter in described vacuum component is connected with described data processing module respectively by RS232 with RS485 serial ports with vacuumometer.
4. the atomic layer deposition apparatus of anti-return as claimed in claim 1, it is characterized in that: described data processing module is connected with the electric current and voltage amplification module in described vacuum component, described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
5. the atomic layer deposition apparatus of anti-return as claimed in claim 1, is characterized in that: described data processing module is connected with the radio-frequency power supply in described plasma-generating component.
6. the atomic layer deposition apparatus of anti-return as claimed in claim 1, is characterized in that: described data processing module is connected with the mass flow controller in described gas path component and each magnetic valve.
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| FI129578B (en) * | 2019-06-28 | 2022-05-13 | Beneq Oy | An atomic layer deposition apparatus |
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| EP2312617A1 (en) * | 2008-07-04 | 2011-04-20 | Sharp Kabushiki Kaisha | Vacuum processing device and gas supply method |
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