CN103046024A - Anti-backflow atomic layer deposition equipment and use method thereof - Google Patents
Anti-backflow atomic layer deposition equipment and use method thereof Download PDFInfo
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- CN103046024A CN103046024A CN2011103100154A CN201110310015A CN103046024A CN 103046024 A CN103046024 A CN 103046024A CN 2011103100154 A CN2011103100154 A CN 2011103100154A CN 201110310015 A CN201110310015 A CN 201110310015A CN 103046024 A CN103046024 A CN 103046024A
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 116
- 238000004140 cleaning Methods 0.000 claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- 239000012495 reaction gas Substances 0.000 claims abstract description 20
- 239000013049 sediment Substances 0.000 claims description 39
- 230000003321 amplification Effects 0.000 claims description 8
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 8
- 238000011022 operating instruction Methods 0.000 claims description 4
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 23
- 238000000151 deposition Methods 0.000 abstract description 18
- 230000008021 deposition Effects 0.000 abstract description 17
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 239000000376 reactant Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to anti-backflow atomic layer deposition equipment. The atomic layer deposition equipment comprises a vacuum component, a heating component, a gas path component, a plasma generation component, a control component and a deposition chamber; the gas path component comprises a first pipeline and a second pipeline, and a section of common pipeline extends from the joint of the tail ends of the first pipeline and the second pipeline to be connected with the deposition chamber; a pair of reaction gas source bottles and a cleaning gas source bottle are respectively arranged on the first pipeline and the second pipeline, and the reaction gas source bottles are arranged at one ends of the first pipeline and the second pipeline, which are close to the deposition chamber. The invention also provides a use method of the anti-backflow atomic layer deposition equipment. The invention improves the utilization rate of chemical reagents of the atomic layer deposition equipment, reduces the pollution of residual reagents to gas reagents, reduces flow deviation, effectively avoids the gas backflow phenomenon, and simultaneously reduces the retention time of cleaning gas and the removal time of the chemical reagents and reduces the deposition reaction period time.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, especially relate to a kind of atomic layer deposition apparatus and using method thereof of anti-return.
Background technology
During atomic layer deposition apparatus work, a deposition cycle often comprises four-stage: the first chemical reaction gas enters sediment chamber reaction, the first cleaning purge of gas sediment chamber, the second chemical reaction gas and enters sediment chamber's reaction, the second cleaning purge of gas sediment chamber, at this four-stage, all can relate to the process that passes into gas and extracting gases.Existing atomic layer deposition apparatus comprises the chemical reagent of the synchronous actuating of having used a plurality of valves and carries arm, i.e. the first chemical reaction gas, the first cleaning gas, the second chemical reaction gas and the second cleaning gas all are positioned on the same gas channels, each gas source bottle is controlled by corresponding valve, in such system, because valve itself can not be realized activating synchronously completely, therefore, can not really accomplish to eliminate flow excursion, and these inevitable flow excursions can reflux, generation mixes the disadvantageous chemical reagent of deposited product quality, affects the deposition effect of device.Existing structure as shown in Figure 1.
In order to improve the product performance of atomic layer deposition apparatus, eliminate flow excursion, reduce as far as possible gas backstreaming, the detrimentally affect of avoiding the pollution of chemical reagent that deposition is brought, need to the structure for conveying of the reactant gases of traditional atomic layer deposition apparatus be redesigned, satisfy the device to be processed requirement more and more higher to deposition effect.
Summary of the invention
The object of the present invention is to provide a kind of atomic layer deposition apparatus of anti-return, reduce residual reagent to the pollution of gaseous reagent, reduced flow excursion, effectively avoided the gas backstreaming phenomenon.
Another object of the present invention is to provide a kind of using method of atomic layer deposition apparatus of anti-return.
In order to achieve the above object, the technical solution used in the present invention is:
A kind of atomic layer deposition apparatus of anti-return comprises vacuum component, heater block, gas path component, plasma generation parts, function unit and sediment chamber; Described gas path component comprises the first pipeline and second pipe, and one section common conduit is extended in the terminal junction of described the first pipeline and described second pipe, and described common conduit links to each other with described sediment chamber; Be respectively equipped with a pair of reacting gas source bottle and cleaning gas source bottle on described the first pipeline and the described second pipe, described cleaning gas source bottle is arranged on an end of close described sediment chamber on described the first pipeline and the described second pipe.
In the such scheme, described reacting gas source bottle and described cleaning gas source bottle are respectively equipped with the valve of direct control respective sources bottle, pipeline between described reacting gas source bottle and the described cleaning gas source bottle is provided with valve, and the junction of described the first pipeline and described second pipe and described common conduit is respectively equipped with valve.
In the such scheme, described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma generation parts respectively;
Wherein, described computer, be used for the indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data and other parts of equipment are controlled to data processing module, and from data processing module reception director data, the director data that receives is analyzed; Described data processing module is used for the data that described vacuum component, heater block, gas path component, plasma generation parts send are processed.
In the such scheme, the temperature controller in the described heater block is connected with described data processing module by the RS232 serial ports.
In the such scheme, the pressure transmitter in the described vacuum component is connected with vacuumometer by RS232 and is connected with described data processing module with the RS485 serial ports.
In the such scheme, described data processing module connects with the electric current and voltage amplification module of being connected in the vacuum component, and described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
In the such scheme, described data processing module is connected with radio-frequency power supply in the described plasma generation parts.
In the such scheme, described data processing module links to each other with mass flow controller and each magnetic valve in the described gas path component.
A kind of using method of atomic layer deposition apparatus of anti-return comprises the steps:
Open on the by-pass valve control of gas reaction source bottle on gas path component the first pipeline, described the first pipeline valve between the bottle of gas reaction source bottle and gas cleaning source and the valve of described the first pipeline and common conduit junction, carry chemical reaction gas to the amount of setting in advance to the sediment chamber, close above-mentioned valve;
After the reaction of chemical reaction gas in the described sediment chamber finishes, open the by-pass valve control of gas cleaning source bottle on described the first pipeline and the valve of described the first pipeline and common conduit junction, passing into cleaning gas to described sediment chamber to the amount of setting in advance, close above-mentioned valve;
After cleaning in the described sediment chamber is complete, open on the by-pass valve control of gas reaction source bottle on the described gas path component second pipe, the described second pipe valve between the bottle of gas reaction source bottle and gas cleaning source and the valve of described second pipe and described common conduit junction, carry chemical reaction gas to the amount of setting in advance to the sediment chamber, close above-mentioned valve;
After the reaction of chemical reaction gas in the described sediment chamber finishes, open the by-pass valve control of gas cleaning source bottle on the described second pipe and the valve of described second pipe and common conduit junction, passing into cleaning gas to described sediment chamber to the amount of setting in advance, close above-mentioned valve.
Compare with the prior art scheme, the beneficial effect that the technical solution used in the present invention produces is as follows:
The present invention is by adopting two gas delivery channels and dual-valve structure, improved the utilization ratio of the chemical reagent of atomic layer deposition apparatus, reduce residual reagent to the pollution of gaseous reagent, fabulous minimizing flow excursion, effectively avoided the gas backstreaming phenomenon, also can reduce simultaneously the removal time of cleaning gas residence time and chemical reagent, and then reduce deposition reaction cycle time.
Description of drawings
Fig. 1 is the structural representation of sublayer, prior art Central Plains depositing device gas transmission pipeline;
The structural representation of the gas transmission pipeline of the atomic layer deposition apparatus that Fig. 2 provides for the embodiment of the invention;
The system construction drawing of the atomic layer deposition apparatus that Fig. 3 provides for the embodiment of the invention.
Embodiment
Below in conjunction with drawings and Examples technical solution of the present invention is described in detail.
The embodiment of the invention provides a kind of atomic layer deposition apparatus of anti-return, comprises vacuum component, heater block, gas path component, plasma generation parts, function unit and sediment chamber.As shown in Figure 2, gas path component comprises that the terminal junction of the first pipeline 101 and second pipe 201, the first pipelines 101 and second pipe 201 extends one section common conduit 301, and common conduit 301 links to each other with sediment chamber 15.The first pipeline 101 is provided with the first reacting gas source bottle 102 and the first cleaning gas source bottle 103, and second pipe 201 is provided with the second reacting gas source bottle 202 and the second cleaning gas source bottle 203.The first cleaning gas source bottle 103 and the second cleaning gas source bottle 203 are separately positioned on an end of close sediment chamber 15 on the first pipeline 101 and the second pipe 201.
The first reacting gas source bottle 102, the first cleaning gas source bottle 103, the second reacting gas source bottle 202 and the second cleaning gas source bottle 203 are respectively equipped with valve 104, valve 106, valve 204 and the valve 206 of direct control respective sources bottle; Pipeline between the first reacting gas source bottle 102 and the first cleaning gas source bottle 103 is provided with valve 105, the junction that pipeline between the second reacting gas source bottle 202 and the second cleaning gas source bottle 203 is provided with valve 205, the first pipelines 101 and second pipe 201 and common conduit 301 is respectively equipped with valve 107 and valve 207.
The present invention adopts two channels transport of reactant gases body, has effectively avoided the mixing of two kinds of reactant gasess, reduces the pollution of chemical reagent, reduces the usage quantity of chemical reagent, and product quality and production efficiency all are improved.The present invention is on twin-channel basis, and each source bottle has adopted double valve, after the conveying of corresponding chemical reaction reagent is complete, close the double valve of gas, avoid in the pipeline remaining gas to enter public transport pipe, and follow other chemical reagent and enter the sediment chamber, cause the pollution of reagent.
As shown in Figure 3, function unit comprises computer 21 and data processing module 22, and computer 21 is connected with data processing module 22, and data processing module 22 is connected with vacuum component, heater block, gas path component, plasma generation parts respectively.Wherein, computer 21, be used for the indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data and other parts of equipment are controlled to data processing module, and from data processing module reception director data, the director data that receives is analyzed; Data processing module 22 is used for the data that vacuum component, heater block, gas path component, plasma generation parts send are processed.
The embodiment of the invention also provides a kind of using method of atomic layer deposition apparatus of anti-return, comprises the steps:
(1) starts computer 21, enter atomic layer deposition apparatus Controlling System interface, arrange and estimate deposition reaction time and other working parameter of equipment;
(2) computer 21 sends open command by data processing module 22, supply current amplification module 25 output HIGH voltages, and the connection of relay 24, and then open control pump group power supply 18, start mechanical pump 17 and molecular pump 16; Data processing module 22 links to each other with magnetic valve 2 to magnetic valve 7 in the gas path component, being in order to regulate gas path on-off to magnetic valve 2 to the control of magnetic valve 5, is respectively in order to regulate source bottle 8 in the gas path component and the break-make of source bottle 9 to the control of magnetic valve 6 and magnetic valve 7; Data processing module 22 is sent to instruction, the data of computer 21 in mass flow controller and the magnetic valve, opens manually-operated gate 10 and manually-operated gate 11, is bled in sediment chamber 15 and pipeline, takes out base vacuum (approximately to 5 * 10
-4Torr); The temperature information that data processing module 22 pairs of temperature controllers 20, thermopairs provide carries out analyzing and processing, the result is returned to computer 21, the temperature of computer 21 monitoring heating plates, source bottle, pipeline, chamber wall, determine that each parts to be heated continue heating or stopped heating, make them be operated in the state of temperature of setting, finish the control to gas path component, heater block;
(3) by computer 21 the under meter size is set, and preserve this value, open mass flow controller 1, mass flow controller 19, magnetic valve 2, magnetic valve 3, gas 26, gas 27 will enter gas circuit, gas path component is inflated, and 21 pairs of system pressure Real Time Monitorings of computer are when system reaches required operating pressure, close above-mentioned mass flow controller and magnetic valve, stop inflation;
(4) the needed parameter of deposition work is set, computer 21 is with in the order of parameter access control, send to data processing module 22, data processing module 22 is as information channel, the instruction of computer 21 is sent in the receiving-member of radio-frequency power supply 12, the unlatching of control radio-frequency power supply 12 and to the setting of output rating, simultaneously, radio-frequency power supply matching box 13 guarantees that radio-frequency power supplies 12 provide stable power for plasma generation system 14.The output rating of radio-frequency power supply 12 feeds back to computer 21 as the quantities received of data processing module 22,21 pairs of these power of computer are analyzed, so that the plasma generation system 14 in the plasma generation parts is operated in stable state, thereby finishes the control of plasma production part and deposit;
(5) open valve 104 and the valve 105 of controlling the first chemical reaction gas, the first cleaning gas also is in open mode near the valve 107 of sediment chamber 15 simultaneously, 15 carry chemical reagent to the sediment chamber, to the amount of setting in advance, control the first chemical reaction gas double valve and close, close simultaneously the valve 107 of the nearly sediment chamber 15 of the first cleaning gas; After the reaction of the first chemical reaction gas finishes, open valve 106 and the valve 107 of control the first cleaning gas, 15 pass into cleaning gas to the amount of setting in advance to the sediment chamber, the double valve of closing control the first cleaning gas; Cleaning is complete, open valve 204 and the valve 205 of control the second chemical reaction gas, open simultaneously the second cleaning gas near the valve 201 of sediment chamber 15,15 carry the second chemical reaction gas to the sediment chamber, to the amount of setting in advance, control the double valve of the second reactant gases and close, close simultaneously the valve 207 of the nearly sediment chamber 15 of the second cleaning gas; After the second chemical reaction gas finishes, open valve 206 and the valve 207 of control the second cleaning gas, 15 transferring cleaning gases are to predetermined amount to the sediment chamber, the double valve of closing control the second cleaning gas;
(6) cleaning work is complete, and a deposition reaction end cycle is proceeded the work of above-mentioned steps (5), until deposition work is finished;
(7) after deposition finishes, 21 control n cycles of whole equipment dry running of computer, atomic layer deposition apparatus is purged purification, send instruction, open magnetic valve 6 and magnetic valve 7, unlatching source bottle 8 and source bottle 9 purify sediment chamber 15.
(8) after purging finished, bolt down procedure was finished whole work of ald.
The present invention is from the volume of sediment chamber, designed the chamber that in the deposition cycle four-stage, can change volume, effectively change the factor volume V that affects gas residence time, although the variation of V can cause the change of chamber pressure P, but compare the impact of volume change on the residence time, the change of pressure is less on the impact of time, thereby can only consider that generally volume changes the result who brings.
The present invention is by adopting two gas delivery channels and dual-valve structure, when carrying out ald, can guarantee that atomic layer deposition apparatus effectively reduces the chemical reagent reflux problem, reduce flow excursion, prevent that chemical reagent from polluting, and improves the utilization ratio of chemical reagent, reduce reagent waste and tail gas pollution, and then reduce deposition reaction cycle time, thus improve deposition properties, obtain work of high quality.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. the atomic layer deposition apparatus of an anti-return, comprise vacuum component, heater block, gas path component, plasma generation parts, function unit and sediment chamber, it is characterized in that: described gas path component comprises the first pipeline and second pipe, one section common conduit is extended in the terminal junction of described the first pipeline and described second pipe, and described common conduit links to each other with described sediment chamber; Be respectively equipped with a pair of reacting gas source bottle and cleaning gas source bottle on described the first pipeline and the described second pipe, described cleaning gas source bottle is arranged on an end of close described sediment chamber on described the first pipeline and the described second pipe.
2. atomic layer deposition apparatus as claimed in claim 1, it is characterized in that: described reacting gas source bottle and described cleaning gas source bottle are respectively equipped with the valve of direct control respective sources bottle, pipeline between described reacting gas source bottle and the described cleaning gas source bottle is provided with valve, and the junction of described the first pipeline and described second pipe and described common conduit is respectively equipped with valve.
3. atomic layer deposition apparatus as claimed in claim 1, it is characterized in that: described function unit comprises computer and data processing module; Described computer is connected with described data processing module, and described data processing module is connected with described vacuum component, heater block, gas path component, plasma generation parts respectively;
Wherein, described computer, be used for the indicating system operation interface, receive external command, the operating parameter of each parts of indicating system, send operating instruction and data and other parts of equipment are controlled to data processing module, and from data processing module reception director data, the director data that receives is analyzed; Described data processing module is used for the data that described vacuum component, heater block, gas path component, plasma generation parts send are processed.
4. atomic layer deposition apparatus as claimed in claim 3 is characterized in that: the temperature controller in the described heater block is connected with described data processing module by the RS232 serial ports.
5. atomic layer deposition apparatus as claimed in claim 3 is characterized in that: the pressure transmitter in the described vacuum component is connected with vacuumometer by RS232 and is connected with described data processing module with the RS485 serial ports.
6. atomic layer deposition apparatus as claimed in claim 3, it is characterized in that: described data processing module connects with the electric current and voltage amplification module of being connected in the vacuum component, described electric current and voltage amplification module is connected with rly., and described rly. lower end is pump group power supply.
7. atomic layer deposition apparatus as claimed in claim 3 is characterized in that: described data processing module is connected with radio-frequency power supply in the described plasma generation parts.
8. atomic layer deposition apparatus as claimed in claim 3 is characterized in that: described data processing module links to each other with mass flow controller and each magnetic valve in the described gas path component.
9. the using method of the atomic layer deposition apparatus of an anti-return is characterized in that, comprises the steps:
Open on the by-pass valve control of gas reaction source bottle on gas path component the first pipeline, described the first pipeline valve between the bottle of gas reaction source bottle and gas cleaning source and the valve of described the first pipeline and common conduit junction, carry chemical reaction gas to the amount of setting in advance to the sediment chamber, close above-mentioned valve;
After the reaction of chemical reaction gas in the described sediment chamber finishes, open the by-pass valve control of gas cleaning source bottle on described the first pipeline and the valve of described the first pipeline and common conduit junction, passing into cleaning gas to described sediment chamber to the amount of setting in advance, close above-mentioned valve;
After cleaning in the described sediment chamber is complete, open on the by-pass valve control of gas reaction source bottle on the described gas path component second pipe, the described second pipe valve between the bottle of gas reaction source bottle and gas cleaning source and the valve of described second pipe and described common conduit junction, carry chemical reaction gas to the amount of setting in advance to the sediment chamber, close above-mentioned valve;
After the reaction of chemical reaction gas in the described sediment chamber finishes, open the by-pass valve control of gas cleaning source bottle on the described second pipe and the valve of described second pipe and common conduit junction, passing into cleaning gas to described sediment chamber to the amount of setting in advance, close above-mentioned valve.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110310015.4A CN103046024B (en) | 2011-10-13 | 2011-10-13 | Anti-backflow atomic layer deposition equipment and use method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110310015.4A CN103046024B (en) | 2011-10-13 | 2011-10-13 | Anti-backflow atomic layer deposition equipment and use method thereof |
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| CN103046024A true CN103046024A (en) | 2013-04-17 |
| CN103046024B CN103046024B (en) | 2015-09-09 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108070844A (en) * | 2016-11-16 | 2018-05-25 | 矽碁科技股份有限公司 | Atomic layer deposition equipment and air pumping rate control method thereof |
| CN114026266A (en) * | 2019-06-28 | 2022-02-08 | Beneq有限公司 | Atomic layer deposition apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006032610A (en) * | 2004-07-15 | 2006-02-02 | Tokyo Electron Ltd | Apparatus for depositing film |
| EP2312617A1 (en) * | 2008-07-04 | 2011-04-20 | Sharp Kabushiki Kaisha | Vacuum processing device and gas supply method |
-
2011
- 2011-10-13 CN CN201110310015.4A patent/CN103046024B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006032610A (en) * | 2004-07-15 | 2006-02-02 | Tokyo Electron Ltd | Apparatus for depositing film |
| EP2312617A1 (en) * | 2008-07-04 | 2011-04-20 | Sharp Kabushiki Kaisha | Vacuum processing device and gas supply method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108070844A (en) * | 2016-11-16 | 2018-05-25 | 矽碁科技股份有限公司 | Atomic layer deposition equipment and air pumping rate control method thereof |
| CN108070844B (en) * | 2016-11-16 | 2019-10-18 | 矽碁科技股份有限公司 | Atomic layer deposition equipment and air pumping rate control method thereof |
| CN114026266A (en) * | 2019-06-28 | 2022-02-08 | Beneq有限公司 | Atomic layer deposition apparatus |
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| CN103046024B (en) | 2015-09-09 |
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