CN111101115B - Gas path switching device, control method thereof and semiconductor processing equipment - Google Patents
Gas path switching device, control method thereof and semiconductor processing equipment Download PDFInfo
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- CN111101115B CN111101115B CN201811249338.5A CN201811249338A CN111101115B CN 111101115 B CN111101115 B CN 111101115B CN 201811249338 A CN201811249338 A CN 201811249338A CN 111101115 B CN111101115 B CN 111101115B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The invention provides a gas path switching device, a control method thereof and semiconductor processing equipment, belongs to the technical field of semiconductor processing equipment, and can at least partially solve the technical problem of pressure fluctuation in the existing semiconductor processing equipment. The gas circuit switching device comprises a programmable logic controller and at least one gas circuit switching piece, wherein the gas circuit switching piece comprises a control signal input end, a gas inlet, a first gas outlet and a second gas outlet; the control signal input end is electrically connected with one IO end of the programmable logic controller; the air path switching piece is used for enabling the air flowing in from the air inlet to flow out from the first air outlet when the control signal input end receives a first level signal, and enabling the air flowing in from the air inlet to flow out from the second air outlet when the control signal input end receives a second level signal.
Description
Technical Field
The invention belongs to the technical field of semiconductor processing equipment, and particularly relates to a gas path switching device, semiconductor processing equipment and a control method of the gas path switching device.
Background
In the conventional semiconductor processing equipment, for example, an Atomic Layer Deposition (ALD) equipment, the film generation has periodicity. One of the preparation cycles comprises 4 process steps: the first step is to introduce a reaction precursor (Source) into the process chamber, the reaction precursor is absorbed on the surface of the wafer to form a layer of active agent, and the chemical absorption reaction is also finished when the absorption of the reaction precursor reaches a saturation state; the second step is to remove the residual reaction precursor and reaction by-product in the process chamber (Purge); introducing a second reaction precursor (Reactant) into the process chamber, wherein the second reaction precursor and an active agent on the surface of the wafer are subjected to chemical reaction, and a monolayer film to be prepared is generated on the surface of the wafer; the fourth step is to remove the second reactive precursor and by-products remaining in the process chamber. Thus completing one atomic layer deposition preparation cycle.
Atomic layer deposition processes are typically implemented by a Programmable Logic Controller (PLC) to control the rapid switching of various valves within the apparatus. As shown in fig. 1, the programmable logic control device 1 includes a computing module and an IO module, and the computing module sequentially controls output of each IO port in the IO module according to a ladder diagram coding mode. Each IO port is electrically connected to and controls one solenoid valve (solenoid valve SV1, solenoid valve SV2, solenoid valve SV3, solenoid valve SV 4). Each solenoid valve controls a control valve. Specifically, each solenoid valve controls whether high pressure air (CDA) flows to the corresponding control valve (control valve PV1, control valve PV2, control valve PV3, control valve PV 4).
Assuming that the control valve PV1 is a valve controlling the pumping of the process chamber, the control valve PV2 is a valve controlling the charging of the process chamber with the reactive precursors, and the control valve PV1 and the control valve PV2 are a set. Typically the aeration and extraction are counted by a mass flow Meter (MFC) (not shown in fig. 1). The flow of the PLC controlling the two control valves is as follows: firstly, a first IO port (labeled as IO1) sends a command to control the control valve PV1 to close, and a second IO port (labeled as IO2) sends a command to control the control valve PV2 to open; in the second step, the second IO port commands the control valve PV2 to close, and the first control valve PV1 commands the control valve PV1 to open. The PLC program is designed by ladder coding, and scans the IO ports in sequence according to a fixed sequence (for example, the sequence of IO1, IO2, IO3, and IO4 is circulated), that is, the control valves are controlled in sequence according to a fixed sequence. In addition, due to the characteristics of the atomic layer deposition equipment, the paired control valves cannot be opened at the same time, for example, the control valve PV1 and the control valve PV2 cannot be opened at the same time. This causes the following problems:
when the PLC scans the first IO port (i.e. scans the control valve PV1), since the control valve PV2 is now open, it is necessary to first close the control valve PV2 during this scan and then open the control valve PV1 during the next scan. This results in a period of time during which the control valve PV1 and the control valve PV2 are both closed, which results in a change in the amount of gas introduced into the process chamber, causing pressure fluctuations in the process chamber, which affects the process.
Disclosure of Invention
The invention at least partially solves the problem of pressure fluctuation in the existing semiconductor processing equipment, and provides a gas path switching device, semiconductor processing equipment and a control method of the gas path switching device.
According to a first aspect of the present invention, there is provided an air path switching device, comprising a programmable logic controller and at least one air path switching piece, wherein the air path switching piece comprises a control signal input end, a gas flow inlet, a first gas flow outlet and a second gas flow outlet;
the control signal input end is electrically connected with one IO end of the programmable logic controller;
the air path switching piece is used for enabling the air flowing in from the air inlet to flow out from the first air outlet when the control signal input end receives a first level signal, and enabling the air flowing in from the air inlet to flow out from the second air outlet when the control signal input end receives a second level signal.
Optionally, the air path switching piece comprises a relay and an electromagnetic valve, and a control signal input end of the relay is used as a control signal input end of the air path switching piece;
the relay is configured that when the control signal input end of the relay receives a first level signal, the first contact of the relay is electrically connected with the power supply and the second contact of the relay is disconnected with the power supply, and when the control signal input end of the relay receives a second level signal, the second contact of the relay is electrically connected with the power supply and the first contact of the relay is disconnected with the power supply;
a first input end of the electromagnetic valve is electrically connected with the first contact, and a second input end of the electromagnetic valve is electrically connected with the second contact;
the electromagnetic valve is configured to control the gas flowing in from the gas inlet to flow out from the first gas outlet when the first input end of the electromagnetic valve is connected with a power supply and the second input end of the electromagnetic valve is floating, and control the gas flowing in from the gas inlet to flow out from the second gas outlet when the second input end of the electromagnetic valve is connected with the power supply and the first input end of the electromagnetic valve is floating.
Optionally, the first contact is a normally closed contact, and the second contact is a normally open contact; or the first contact is a normally open contact, and the second contact is a normally closed contact.
Optionally, the first level signal is a high level signal, and the second level signal is a low level signal; or the first level signal is a low level signal, and the second level signal is a high level signal.
Optionally, the air path switching device includes a plurality of air path switching pieces, and a control signal input end of each air path switching piece is connected to a different IO end of the programmable logic controller.
According to a second aspect of the present invention, there is provided a semiconductor processing apparatus, comprising at least one control valve set and the gas path switching device provided by the first aspect of the present invention, each control valve set comprises a first control valve and a second control valve, the first gas outlet of each gas path switching piece of the gas path switching device is connected to the first control valve in one control valve set, and the second gas outlet is connected to the second control valve in the control valve set.
Optionally, a mass flow meter, a source bottle, a process chamber, and a first line from the flow meter to the process chamber, a second line from the flow meter to the process chamber through the source bottle, wherein,
the first control valve is used for controlling the on-off of the first pipeline, and the second control valve is used for controlling the on-off of the second pipeline.
Optionally, the second control valves are arranged in pairs, one of the second control valves being located in the second conduit at a position between the flow meter and the source bottle, and the other second control valve being located in the second conduit at a position between the source bottle and the process chamber.
Optionally, the semiconductor processing apparatus is an atomic layer deposition apparatus.
According to a third aspect of the present invention, there is provided a control method for a gas circuit switching device, which is applied to the gas circuit switching device according to the first aspect of the present invention, the control method comprising: one IO end of the programmable logic controller outputs a second electrical level to one control signal input end, and the air path switching piece enables air flowing in from the air inlet to flow out from the second air outlet; after the set time, the IO terminal outputs a first level to the control signal input terminal, and the gas path switching member causes the gas flowing in from the gas inlet to flow out from the first gas outlet.
By applying the gas path switching device provided by the invention, the two states of gas flowing out of the first gas outlet and gas flowing out of the second gas outlet can be switched without time delay.
Drawings
Fig. 1 is a schematic diagram of a gas path switching structure of a conventional semiconductor processing apparatus;
fig. 2 is a schematic structural diagram of a gas circuit switching device and a semiconductor processing apparatus formed by the gas circuit switching device according to an embodiment of the present invention;
FIG. 3 is a circuit diagram of a state of an example of the air passage switching member in FIG. 2;
fig. 4 is a circuit diagram of another state of an example of the air passage switching member in fig. 2.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Example 1:
the present embodiment provides an air path switching device, as shown in fig. 2, including a programmable logic controller 1 and at least one air path switching element 2, where the air path switching element 2 includes a control signal input end 21, a gas inlet 22, a first gas outlet 23, and a second gas outlet 24; the control signal input terminal 21 is electrically connected to one IO terminal (IO1 and IO2 in fig. 2) of the programmable logic controller 1; the gas path switching member 2 serves to flow the gas flowing in from the gas inlet port 22 out from the first gas outlet port 23 when the control signal input terminal 21 receives a first level signal, and to flow the gas flowing in from the gas inlet port 22 out from the second gas outlet port 24 when the control signal input terminal 21 receives a second level signal.
That is, the programmable logic controller 1 outputs two different signals (a first level signal and a second level signal, or a high level signal and a low level signal) through one IO terminal thereof, wherein each level signal triggers the air path switching member 2 to flow the air (usually high pressure air, CDA) flowing in from the air inlet 22 out from the first air outlet 23 or out from the second air outlet 24. If the first gas outflow port 23 and the second gas outflow port 24 are respectively communicated with different control valves (for example, the control valve PV1 and the control valve PV2 in fig. 2, and the control valves are specifically, for example, pneumatic valves) in one control valve group in the ald apparatus, only one control valve of the control valve PV1 and the control valve PV2 is opened and the other control valve is closed at the same time during the process, and there is no time delay in the switching between the two, so that the pressure in the process chamber 53 is not fluctuated, which is beneficial to improving the process yield.
Optionally, the first level signal is a high level signal, and the second level signal is a low level signal; or the first level signal is a low level signal, and the second level signal is a high level signal. I.e. whether the high or low output from the IO terminal of the programmable logic controller controls the gas flow out of the first gas flow outlet 23 or the second gas flow outlet 24, a flexible setting can be made by the skilled person, which need not be specified.
Alternatively, referring to fig. 3 and 4, the air path switching piece 2 includes a relay 3 and a solenoid valve 4, and a control signal input terminal 31 of the relay 3 serves as a control signal input terminal 21 of the air path switching piece 2; the relay 3 is configured such that when its control signal input terminal 31 receives a first level signal, its first contact 32 is electrically connected to the power supply 24V (providing 24V voltage) and its second contact 33 is disconnected from the power supply 24V, and when its control signal input terminal 31 receives a second level signal, its second contact 33 is electrically connected to the power supply 24V and its first contact 32 is disconnected from the power supply 24V; the first input 41 of the solenoid valve 4 is electrically connected to the first contact 32, and the second input 42 of the solenoid valve 4 is electrically connected to the second contact 33; the solenoid valve 4 is configured to control the gas flowing in from the gas inlet port 22 to flow out from the first gas outlet port 23 when the first input port 41 thereof is connected to the power source 24V and the second input port 42 is floated, and to control the gas flowing in from the gas inlet port 22 to flow out from the second gas outlet port 24 when the second input port 42 thereof is connected to the power source 24V and the first input port 41 is floated.
Only one of the first contact 32 and the second contact 33 of the relay 3 is in communication with the power supply 24V at the same time. So that only one of the first contact 32 and the second contact 33 is connected to the power supply 24V when the control signal input terminal 31 of the relay 3 and one of the IO ports of the programmable logic controller 1 receive a high level or a low level signal. Since the first contact 32 and the second contact 33 are connected to one input terminal (the first input terminal 41 and the second input terminal 42) of the solenoid valve 4, respectively, only one of the first input terminal 41 and the second input terminal 42 of the solenoid valve 4 is connected to the power supply 24V at the same time. Since the first input end 41 and the second output end 42 of the solenoid valve 4 respectively control the gas in the pipeline to flow out in different directions, the gas can flow out from the first gas outlet 23 or the second gas outlet 24 only by corresponding to a simple designed gas pipeline. The switching of the outflow 23 of gas from the first gas outflow opening and the outflow 24 of gas from the second gas outflow opening is thus achieved without delay. In the ALD system, the two gas outlets each control a different control valve in a control valve group, so that the switching of the individual control valves is not delayed.
Specifically, the first contact 32 is a normally closed contact, and the second contact 33 is a normally open contact; alternatively, the first contact 32 is a normally open contact and the second contact 33 is a normally closed contact. Flexible settings can be made by those skilled in the art.
Optionally, the air path switching device includes a plurality of air path switches 2, and a control signal input terminal 21 of each air path switch 2 is connected to a different IO terminal of the programmable logic controller 1.
Namely, different IO ends of the programmable logic controller 1 respectively control different air path switching pieces 2.
The present embodiment further provides a semiconductor processing apparatus, referring to fig. 2, including at least one control valve group (for example, control valve PV1 and PV2 are one control valve group, and control valve PV3 and PV4 are one control valve group) and the air path switching device (including programmable logic controller 1 and at least one air path switching member 2) provided in accordance with the present embodiment, each control valve group includes a first control valve and a second control valve, the first gas outflow port 23 of each air path switching member 2 is connected to the first control valve in one control valve group, and the second gas outflow port 24 is connected to the second control valve in the control valve group (for example, the first gas outflow port 23 of the left air path switching member 2 in fig. 2 is connected to control valve PV1, the second gas outflow port 24 thereof is connected to control valve PV2, and control valves PV1 and PV2 constitute one control valve group).
Namely, the programmable logic controller 1 controls the air path switching piece 2 to flow the high-pressure air CDA to the first control valve or the second control valve in the control valve group, and the delay cannot occur due to the internal logic limitation of the programmable logic controller 1.
Optionally, the semiconductor processing apparatus further comprises a mass flow meter (also referred to as TMA)51, a source bottle 52, a process chamber 53, and a first line from the flow meter 51 to the process chamber 53, a second line from the flow meter 51 to the process chamber 53 via the source bottle 52, wherein a first control valve (e.g., control valve PV1) is used to control the on-off of the first line, and a second control valve (e.g., control valve PV2) is used to control the on-off of the second line.
As the gases flow into the process chamber 53, a reactant precursor is introduced into the process chamber 53, and as the gases flow out of the process chamber 53, excess reactant precursor and reaction byproducts are withdrawn from the process chamber 53.
Optionally, the second control valves are arranged in pairs, one of which is located between the mass flow meter 51 and the source bottle 52 and the other of which is located between the source bottle 52 and the process chamber 53.
That is, as shown in fig. 2, two control valves PV2 are provided between the mass flow meter 51 and the source bottle 52, and between the source bottle 52 and the process chamber 53, respectively.
Optionally, the semiconductor processing apparatus is an atomic layer deposition apparatus. An atomic layer deposition process is performed within the process chamber 53.
The embodiment also provides a control method of the gas circuit switching device, which is applied to the gas circuit switching device according to the present invention, and the control method includes: an IO terminal (for example, IO1) of the programmable logic controller 1 outputs a second level to a control signal input terminal 21, and the air path switching member 2 causes the air flowing in the air inlet 22 to flow out from the second air outlet 24; after a predetermined time, the IO terminal (for example, IO1) outputs a first level to the control signal input terminal 21, and the gas path switching member 2 causes the gas flowing into the gas inlet 22 to flow out from the first gas outlet 23.
The working process of the gas path switching device will be described by taking the semiconductor processing equipment shown in fig. 2 as atomic layer deposition equipment as an example.
Firstly, when the programmable logic controller performs a first scanning, a first IO end (IO1) sends an instruction to a first air channel switching piece 2, the first air channel switching piece 2 controls two second control valves (two control valves PV2) to be opened, controls a first control valve (control valve PV1) to be closed, a first reaction precursor reaches a reaction chamber 53 through a source bottle 52, and a mass flow meter 51 counts the amount of the reaction precursor flowing in. Then, during the second scan, the first IO terminal (IO1) sends a command to the first air path switching element 2, the first air path switching element 2 controls the two second control valves (two control valves PV2) to close, controls the first control valve (control valve PV1) to open, and the air extractor (not shown) extracts the excess reaction precursor and the reaction byproducts from the reaction chamber 53. The control valve PV3 and the control valve PV4 form a control valve group, which is, for example, a control valve for controlling the reaction of the second reaction precursor, and the operation is the same as above.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. The air path switching device is characterized by comprising a programmable logic controller and at least one air path switching piece, wherein the air path switching piece comprises a control signal input end, an air flow inlet, a first air flow outlet and a second air flow outlet;
the control signal input end is electrically connected with one IO end of the programmable logic controller;
the gas path switching piece is used for enabling the gas flowing into the gas inlet to flow out of the first gas outlet when the control signal input end receives a first level signal, and enabling the gas flowing into the gas inlet to flow out of the second gas outlet when the control signal input end receives a second level signal;
the air path switching piece comprises a relay and an electromagnetic valve, and a control signal input end of the relay is used as a control signal input end of the air path switching piece;
the relay is configured that when the control signal input end of the relay receives a first level signal, the first contact of the relay is electrically connected with the power supply and the second contact of the relay is disconnected with the power supply, and when the control signal input end of the relay receives a second level signal, the second contact of the relay is electrically connected with the power supply and the first contact of the relay is disconnected with the power supply;
a first input end of the electromagnetic valve is electrically connected with the first contact, and a second input end of the electromagnetic valve is electrically connected with the second contact;
the electromagnetic valve is configured to control the gas flowing in from the gas inlet to flow out from the first gas outlet when the first input end of the electromagnetic valve is connected with a power supply and the second input end of the electromagnetic valve is floating, and control the gas flowing in from the gas inlet to flow out from the second gas outlet when the second input end of the electromagnetic valve is connected with the power supply and the first input end of the electromagnetic valve is floating.
2. The gas circuit switching device according to claim 1, wherein the first contact is a normally closed contact, and the second contact is a normally open contact; or the first contact is a normally open contact, and the second contact is a normally closed contact.
3. The gas circuit switching device according to claim 1, wherein the first level signal is a high level signal, and the second level signal is a low level signal; or the first level signal is a low level signal, and the second level signal is a high level signal.
4. The air path switching device according to claim 1, wherein the air path switching device comprises a plurality of air path switches, and a control signal input end of each air path switch is connected to a different IO end of the programmable logic controller.
5. A semiconductor processing apparatus, comprising at least one control valve group and a gas path switching device according to any one of claims 1 to 4, each control valve group comprising a first control valve and a second control valve, wherein the first gas outlet of each gas path switching member of the gas path switching device is connected to the first control valve of one control valve group, and the second gas outlet is connected to the second control valve of the control valve group.
6. The semiconductor processing apparatus of claim 5, further comprising a mass flow meter, a source bottle, a process chamber, and a first line from the flow meter to the process chamber, a second line from the flow meter to the process chamber through the source bottle, wherein,
the first control valve is used for controlling the on-off of the first pipeline, and the second control valve is used for controlling the on-off of the second pipeline.
7. The semiconductor processing apparatus of claim 6, wherein the second control valves are arranged in pairs, one of the second control valves being located in the second conduit at a position between the flow meter and the source bottle, and the other of the second control valves being located in the second conduit at a position between the source bottle and the process chamber.
8. The semiconductor processing apparatus of any of claims 5 to 7, wherein the semiconductor processing apparatus is an atomic layer deposition apparatus.
9. A control method for a gas circuit switching device, which is applied to the gas circuit switching device according to any one of claims 1 to 4, the control method comprising: one IO end of the programmable logic controller outputs a second electrical level to one control signal input end, and the air path switching piece enables air flowing in from the air inlet to flow out from the second air outlet; after the set time, the IO terminal outputs a first level to the control signal input terminal, and the gas path switching member causes the gas flowing in from the gas inlet to flow out from the first gas outlet.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6905547B1 (en) * | 2000-12-21 | 2005-06-14 | Genus, Inc. | Method and apparatus for flexible atomic layer deposition |
| CN101457351A (en) * | 2007-12-12 | 2009-06-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution system and semi-conductor processing arrangements employing the same |
| CN101812671A (en) * | 2010-01-07 | 2010-08-25 | 中国科学院半导体研究所 | Gas path device for metal organic chemical vapor deposition equipment |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1074743A (en) * | 1996-08-29 | 1998-03-17 | Fuji Film Micro Device Kk | Gas switching system |
| US6734020B2 (en) * | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| CN1574200A (en) * | 2003-05-12 | 2005-02-02 | 艾格瑞系统有限公司 | Method of mass flow control flow verification and calibration |
| JP4355321B2 (en) * | 2005-03-04 | 2009-10-28 | 株式会社ニューフレアテクノロジー | Vapor growth equipment |
| KR100848782B1 (en) * | 2007-08-21 | 2008-07-28 | 주식회사 동부하이텍 | N2 gas controlling system for photoresist changing process |
| JP2010153420A (en) * | 2008-12-24 | 2010-07-08 | Hitachi Kokusai Electric Inc | Substrate processing apparatus, valve control method and program thereof |
| US8790464B2 (en) * | 2010-01-19 | 2014-07-29 | Mks Instruments, Inc. | Control for and method of pulsed gas delivery |
| US9305810B2 (en) * | 2011-06-30 | 2016-04-05 | Applied Materials, Inc. | Method and apparatus for fast gas exchange, fast gas switching, and programmable gas delivery |
| CN103031544A (en) * | 2011-09-29 | 2013-04-10 | 中国科学院微电子研究所 | Atomic layer deposition device capable of rapidly processing data |
| JP6022908B2 (en) * | 2012-01-16 | 2016-11-09 | 東京エレクトロン株式会社 | Processing apparatus and valve operation confirmation method |
| CN104733347B (en) * | 2013-12-24 | 2018-03-09 | 北京北方华创微电子装备有限公司 | The device of gas switching, method and system in semiconductor processing equipment |
| CN203746799U (en) * | 2013-12-30 | 2014-07-30 | 北京七星华创电子股份有限公司 | Semiconductor process gas path display device |
| US9920844B2 (en) * | 2014-11-26 | 2018-03-20 | Lam Research Corporation | Valve manifold deadleg elimination via reentrant flow path |
| CN105353680B (en) * | 2015-11-19 | 2018-07-17 | 许昌学院 | A kind of control device for atomic layer deposition instrument |
| CN105506581B (en) * | 2015-12-15 | 2019-03-19 | 北京北方华创微电子装备有限公司 | A kind of implementation method preparing film using technique for atomic layer deposition |
-
2018
- 2018-10-25 CN CN201811249338.5A patent/CN111101115B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6905547B1 (en) * | 2000-12-21 | 2005-06-14 | Genus, Inc. | Method and apparatus for flexible atomic layer deposition |
| CN101457351A (en) * | 2007-12-12 | 2009-06-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas distribution system and semi-conductor processing arrangements employing the same |
| CN101812671A (en) * | 2010-01-07 | 2010-08-25 | 中国科学院半导体研究所 | Gas path device for metal organic chemical vapor deposition equipment |
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