CN105506581B - A kind of implementation method preparing film using technique for atomic layer deposition - Google Patents
A kind of implementation method preparing film using technique for atomic layer deposition Download PDFInfo
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- CN105506581B CN105506581B CN201510929984.6A CN201510929984A CN105506581B CN 105506581 B CN105506581 B CN 105506581B CN 201510929984 A CN201510929984 A CN 201510929984A CN 105506581 B CN105506581 B CN 105506581B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
Abstract
The invention discloses a kind of implementation methods that film is prepared using technique for atomic layer deposition, by with the different ALD technology modes of vacuum-pumping type or variable-flow formula, change the indoor purge gas air inflow of reaction chamber, the disturbance of airflow field is formed in chamber, the purging effect to superfluous reaction source and byproduct of reaction can be effectively improved, reduce the process time of film growth cycle, improve production efficiency, and parasitic CVD reaction can be reduced on this basis, ALD processing quality is improved, uniformity of film is improved.
Description
Technical field
The present invention relates to technique for atomic layer deposition fields, prepare more particularly, to a kind of application technique for atomic layer deposition
The implementation method of film.
Background technique
Atomic layer deposition (Atomic layer deposition, ALD) is by the way that gas phase predecessor to be alternately passed through instead
It answers device and occurs to chemically react and formed a kind of method (technology) of deposition film on the surface of matrix, which can be by substance
It is plated in substrate surface layer by layer with monoatomic layer form of film.
It, can be with the shape of chemisorption when predecessor reaches the surface of depositing base during atom layer deposition process
Formula is deposited on matrix surface.It also needs to purge reactor with inert gas between different precursor pulses, with clear
Except the unadsorbed superfluous reaction source in matrix surface, guarantee that chemical reaction only occurs in matrix surface.
According to the difference to reaction source (predecessor) isolation method, atomic layer deposition apparatus (ALD) can be divided into time type
Equipment and spatial equipment two types.For time type ALD equipment, two kinds of reaction sources can appear in same in different time
In a reaction chamber, each growth cycle of technique, which can be divided into, " to be passed through the first reaction source-and purges-be passed through second instead
Ying Yuan-purging " four-stage.For spatial ALD equipment, the movement of substrate location can use usually two kinds of reactions are isolated
Source body, to realize ALD technique.
For carrying out ALD technique on time type ALD equipment, conventional ALD technique generallys use four step process, i.e., often
A process cycles process includes four steps: being passed through the first reaction source-and purges-be passed through second of reaction source-purging.Wherein, into
Row purging when, be using side leading edge pumping by the way of, in the process the indoor purge gas air inflow of reaction chamber and be evacuated when
Pressure remains unchanged.The advantages of this Purge methods is to may make ALD technical process relatively easy, Yi Shixian.
But there is also some disadvantages simultaneously for above-mentioned conventional ALD technique: first consisting in using above-mentioned Purge methods, will make
It is relatively stable to obtain the indoor airflow field of reaction chamber, causes easily the presence of dead zone in cavity space, so that being not easy superfluous predecessor
It is clean with byproduct of reaction purging；Next is to will increase the consumption of purge time and inert gas using above-mentioned Purge methods,
To reduce the yield of ALD.
Summary of the invention
It is an object of the invention to overcome drawbacks described above of the existing technology, provide a kind of using technique for atomic layer deposition
The implementation method of film is prepared, to improve the purging effect to superfluous reaction source and byproduct of reaction.
To achieve the above object, technical scheme is as follows:
A kind of implementation method preparing film using technique for atomic layer deposition, comprising the following steps:
Step 1: the first reaction source is passed through into reaction chamber；
Step 2: in a manner of alternate variable-flow, purge gas is passed through into reaction chamber, is carried out first time gas and is blown
It sweeps；
Step 3: second of reaction source is passed through into reaction chamber；
Step 4: in a manner of alternate variable-flow, purge gas is passed through into reaction chamber, is carried out second of gas and is blown
It sweeps；
Wherein, the variable-flow mode includes:
Mode A: it is passed through the purge gas of certain flow；
Mode B: being passed through the purge gas of zero delivery, and reaction chamber is made to be in evacuated state；
The alternation method of the A in a manner of, mode B carry out first and second gas purging.
Preferably, mode A, mode B progress in no particular order.
Preferably, mode A, mode B alternately one are to several times.
A kind of implementation method preparing film using technique for atomic layer deposition, comprising the following steps:
Step 1: the first reaction source is passed through into reaction chamber；
Step 2: in a manner of alternate variable-flow, purge gas is passed through into reaction chamber, is carried out first time gas and is blown
It sweeps；
Step 3: second of reaction source is passed through into reaction chamber；
Step 4: in a manner of alternate variable-flow, purge gas is passed through into reaction chamber, is carried out second of gas and is blown
It sweeps；
Wherein, the variable-flow mode includes:
Mode C: it is passed through the purge gas of first flow；
Mode D: it is passed through the purge gas of second flow；
The alternation method of the C in a manner of, mode D carry out first time gas purging；And
Mode E: it is passed through the purge gas of third flow；
Mode F: it is passed through the purge gas of the 4th flow；
The alternation method of the E in a manner of, mode F carry out second of gas purging.
Preferably, mode C, mode D progress in no particular order, mode E, mode F progress in no particular order.
Preferably, mode C, mode D alternately one are to several times, and mode E, mode F alternately one are to several times.
Preferably, first flow is less than second flow, and third flow is less than the 4th flow.
Preferably, first flow is greater than third flow, and second flow is greater than the 4th flow.
It can be seen from the above technical proposal that the present invention with zero delivery by being vacuumized or the different modes of variable flow change
Become the indoor purge gas air inflow of reaction chamber, forms the disturbance of airflow field in chamber, can effectively improve to superfluous reaction source
And the purging effect of byproduct of reaction, the process time of film growth cycle is reduced, production efficiency is improved；On this basis, may be used
Parasitism CVD reaction is reduced, and ALD processing quality can be improved, so that uniformity of film is improved.
Detailed description of the invention
Fig. 1 is that one of one of preferable specific embodiment of the invention prepares film using technique for atomic layer deposition
Implementation method flow chart；
Fig. 2 is that one of two application technique for atomic layer deposition of a preferable specific embodiment of the invention prepare film
Implementation method flow chart；
Fig. 3 is a kind of gas circuit distribution schematic diagram of ALD system；1. ozone generator in figure, 2. gaseous state trimethyl aluminiums occur
Device, 3. reaction chambers, 4. reaction chamber exhaust outlets, 5. pneumatic operated valve V1-V6；
Fig. 4-Figure 10 is the ALD process cycle block diagram in one-embodiment of the embodiment of the present invention seven respectively.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.
It is existing on time type ALD equipment carry out ALD technique when, carry out purge in the indoor purge gass of reaction chamber
Pressure when body air inflow and pumping remains unchanged.This Purge methods have the drawback that: 1) will be so that reaction chamber is indoor
Airflow field is relatively stable, causes easily the presence of dead zone in cavity space, so that being not easy to blow superfluous predecessor and byproduct of reaction
It sweeps clean；2) it will increase the consumption of purge time and inert gas, to reduce the yield of ALD.
In view of the above-mentioned problems, the invention proposes a kind of variable-flows to purge ALD technique, i.e., make reaction chamber in purge
Indoor purge gas air inflow changes.A kind of realization side preparing film using technique for atomic layer deposition of the invention
Method, comprising the following steps:
Step 1: the first reaction source is passed through into reaction chamber；
Step 2: in a manner of alternate variable-flow, purge gas is passed through into reaction chamber, is carried out first time gas and is blown
It sweeps；
Step 3: second of reaction source is passed through into reaction chamber；
Step 4: in a manner of alternate variable-flow, purge gas is passed through into reaction chamber, is carried out second of gas and is blown
It sweeps.
The improved method of aforementioned present invention can be realized: a kind of to be to maintain in purge gas tube road by two ways
Flow is constant, vacuumizes mode by cutout and realizes ALD technique of the invention (vacuum-pumping type ALD technique)；Another kind is to blow
During sweeping, ALD technique of the invention (variable-flow formula ALD work is realized by directly adjusting the flow in purge gas pipeline
Skill).It is described in detail respectively following.
In a specific embodiment of the invention below, referring to Fig. 1, Fig. 1 is a preferable specific embodiment party of the invention
One of one of formula prepares the implementation method flow chart of film using technique for atomic layer deposition；Meanwhile Fig. 3 is please referred to,
Fig. 3 is a kind of gas circuit distribution schematic diagram of ALD system.As shown in Figure 1, prepared by a kind of application technique for atomic layer deposition of the invention
The implementation method of film, the switch by changing valve in gas circuit realizes the control to chamber charge flow rate, to change chamber
Interior air-flow trend, causes the disturbance of chamber interior air-flow field, improves purging effect, make superfluous reaction source and byproduct of reaction quilt
Clean (i.e. vacuum-pumping type ALD technique) is purged, method includes with the next stage:
Stage one: the first reaction source is passed through into reaction chamber.
Please refer to Fig. 3.Using TMA (trimethyl aluminium) as the first reaction source, ozone (O3) it is used as second of reaction source, nitrogen
For gas is as purge gas, the pneumatic operated valve (V6) for being set to reaction chamber exhaust outlet 4 and the gas set on purge gas pipeline are closed
Dynamic valve (V2, V3, V5) 5, opens the pneumatic operated valve (V4) 5 for being set to 2 pipeline of gaseous state trimethyl aluminium generator, leads into reaction chamber 3
Enter TMA.
Stage two: being passed through the purge gas of certain flow into reaction chamber, carries out first time gas purging.
In this stage, valve V6 is opened, valve V4 is closed, the nitrogen of certain flow is made to enter reaction chamber via valve V2, V3, V5
Room (i.e. mode A), purges TMA surplus reaction source and byproduct of reaction.
Stage three: stop being passed through purge gas into reaction chamber, and vacuumized.
In this stage, it keeps valve V6 to open, valve V4 closing, and closes valve V2, V3, V5, be passed through the purge gass of zero delivery
Body, that is, stop to purge gas, and (i.e. mode B) is vacuumized to deposition chambers, make TMA surplus reaction source and reaction
By-product is clean by thorough purging.
Stage four: second of reaction source is passed through into reaction chamber.
In this stage, valve V6 and valve V2, V3, V5 are closed, the pneumatic operated valve (V1) 5 for being set to 1 pipeline of ozone generator is opened,
Ozone is passed through into reaction chamber.
Stage five: being passed through the purge gas of certain flow into reaction chamber, carries out second of gas purging.
In this stage, valve V6 is opened, valve V1 is closed, the nitrogen of certain flow is made to enter reaction chamber via valve V2, V3, V5
Room (i.e. mode A), purges ozone surplus reaction source and byproduct of reaction.
Stage six: stop being passed through purge gas into reaction chamber, and vacuumized.
In this stage, it keeps valve V6 to open, valve V1 closing, and closes valve V2, V3, V5, be passed through the purge gass of zero delivery
Body, that is, stop to purge gas, and vacuumize (i.e. mode B) to deposition chambers makes ozone surplus reaction source and anti-
Answer by-product clean by thorough purging.
An Al is completed at this time2O3Film growth cycle can so recycle the entire original until completing certain film thickness
Sublayer deposition process.
As optional embodiment, the execution order in above-mentioned stage two and stage three be can be interchanged, stage five and stage
Six execution order can be interchanged, that is, carry out used mode A when first and second gas purging, the progress of mode B can be regardless of
Successively.Also, stage two and stage three during carrying out first time gas purging, stage five and stage six carrying out second
One can be carried out during secondary gas purging according to alternation method to several times, i.e., is adopted when first and second gas of progress purges
Mode A, mode B alternately number can be for one to several times, a combination thereof mode for example may is that AB, be also possible to
BA,ABA,BAB…….Further, when first and second gas purging, respective mode A, mode B alternately number with
And precedence can not also be identical.
In addition, reaction source gas can also use other gas sources, purge gas can also use inert gas, valve V2,
When V3, V5 are opened, the flow of purge gas can refer to the execution of the flow in prior art.
In another specific embodiment of the invention below, referring to Fig. 2, Fig. 2 is the preferably specific implementation of the present invention one
One of two of mode prepare the implementation method flow chart of film using technique for atomic layer deposition；Meanwhile please referring to figure
3, Fig. 3 be a kind of gas circuit distribution schematic diagram of ALD system.As shown in Fig. 2, a kind of application technique for atomic layer deposition system of the invention
The implementation method of standby film, the flow by changing purge gas gas circuit realize the disturbance to chamber interior air-flow field, improve purging
Effect makes superfluous reaction source and byproduct of reaction be purged clean (i.e. variable-flow formula ALD technique), and method includes following rank
Section:
Stage one: the first reaction source is passed through into reaction chamber.
Please refer to Fig. 3.Using TMA (trimethyl aluminium) as the first reaction source, ozone (O3) it is used as second of reaction source, nitrogen
For gas is as purge gas, outlet valve V6 and air intake valve V2, V3, V5 are closed, air intake valve V4 is opened, to reaction chamber
In be passed through TMA.
Stage two: being passed through the purge gas of first flow into reaction chamber, carries out first time gas purging.
In this stage, valve V6 is opened, valve V4 is closed, the nitrogen of first flow is made to enter reaction chamber via valve V2, V3, V5
Room (i.e. mode C), purges TMA surplus reaction source and byproduct of reaction.
Stage three: continue the purge gas that second flow is passed through into reaction chamber.
In this stage, it keeps valve V6 to open, valve V4 closing, enters the nitrogen of second flow via valve V2, V3, V5 anti-
Chamber (i.e. mode D) is answered, keeps TMA surplus reaction source and byproduct of reaction clean by thorough purging.
As optional embodiment, the execution order in above-mentioned stage two and stage three be can be interchanged, that is, be carried out for the first time
Used mode C when gas purges, mode D progress can be in no particular order.Also, stage two and stage three are carrying out for the first time
Gas can carry out one to several times according to alternation method during purging, i.e., progress first time gas purging when used side
Formula C, mode D alternately number can for one to several times, a combination thereof mode for example may is that CD, be also possible to DC, CDC,
DCD……。
As preferred embodiment, first flow is smaller than second flow, for example, 6slm can be made always to flow in the stage two
The nitrogen of amount enters reaction chamber via valve V2, V3, V5 (each logical 2slm flow of 3 valve groups)；In stage three, 9slm total flow can be made
Nitrogen via valve V2, V3, V5 (each logical 3slm flow of 3 valve groups) enter reaction chamber, by increase flow continue purging side
Method achievees the purpose that blow off the first superfluous predecessor and byproduct of reaction.
Stage four: second of reaction source is passed through into reaction chamber.
In this stage, valve V6 and valve V2, V3, V5 are closed, valve V1 is opened, ozone is passed through into reaction chamber.
Stage five: being passed through the purge gas of third flow into reaction chamber, carries out second of gas purging.
In this stage, valve V6 is opened, valve V1 is closed, the nitrogen of third flow is made to enter reaction chamber via valve V2, V3, V5
Room (i.e. mode E), purges ozone surplus reaction source and byproduct of reaction.
Stage six: continue the purge gas that the 4th flow is passed through into reaction chamber.
In this stage, it keeps valve V6 to open, valve V1 closing, enters the nitrogen of the 4th flow via valve V2, V3, V5 anti-
Chamber (i.e. mode F) is answered, keeps ozone surplus reaction source and byproduct of reaction clean by thorough purging.
As optional embodiment, the execution order in above-mentioned stage five and stage six be can be interchanged, that is, be carried out second
Used mode E when gas purges, mode F progress can be in no particular order.Also, stage five and stage six are carrying out second
Gas can carry out one to side used when several times, that is, carrying out second gas purging according to alternation method during purging
Formula E, mode F alternately number can for one to several times, a combination thereof mode for example may is that EF, be also possible to FE, EFE,
FEF……。
As preferred embodiment, third flow is smaller than the 4th flow；Also, first flow can be greater than third stream
Amount, second flow can be greater than the 4th flow, and effect is preferably applied in combination to obtain.For example, 3slm can be made total in the stage five
The nitrogen of flow enters reaction chamber via valve V2, V3, V5 (each logical 1slm flow of 3 valve groups)；In stage six, 6slm can be made always to flow
The nitrogen of amount enters reaction chamber via valve V2, V3, V5 (each logical 2slm flow of 3 valve groups), continues purging by increasing flow
Method achievees the purpose that blow off second of superfluous predecessor and byproduct of reaction.
As other optional embodiments, reaction source gas can also use other gas sources, and purge gas can also adopt
Use inert gas.
An Al is equally completed at this time2O3Film growth cycle can be recycled so until completing the whole of certain film thickness
A atomic layer deposition process.
Below to prepare aluminum oxide (Al2O3) for passivation film, following reality is provided according to the above method of the present invention
Apply example.
Embodiment one
It carries out 200 circulation films using vacuum-pumping type ALD technique to grow, to prepare the aluminium oxide of 20nm target thickness
Film, ALD technological parameter are as follows: 200 DEG C of technological temperature, (logical TMA 2s, vacuumizes 2s to ALD process cycle, purges 2s, leads to O32s,
Vacuumize 2s, purge 2s) total 12s.Please refer to the block diagram of Fig. 4.
Process results are gained film thickness 20.5nm, uniformity 2% in piece.
Embodiment two
It carries out 200 circulation films using vacuum-pumping type ALD technique to grow, to prepare the aluminium oxide of 20nm target thickness
Film, ALD technological parameter are as follows: 200 DEG C of technological temperature, (logical TMA 2s, purges 2s, vacuumize 2s ALD process cycle, leads to O32s,
2s is purged, 2s is vacuumized) total 12s.Please refer to the block diagram of Fig. 5.
Process results are gained film thickness 21.5nm, uniformity 1.5% in piece.
Embodiment three
It carries out 200 circulation films using vacuum-pumping type ALD technique to grow, to prepare the aluminium oxide of 20nm target thickness
Film, ALD technological parameter are as follows: 200 DEG C of technological temperature, (logical TMA 2s, purges 2s, vacuumize 2s ALD process cycle, leads to O32s,
Vacuumize 2s, purge 2s) total 12s.Please refer to the block diagram of Fig. 6.
Process results are gained film thickness 22.5nm, uniformity 2.5% in piece.
Example IV
It carries out 200 circulation films using vacuum-pumping type ALD technique to grow, to prepare the aluminium oxide of 20nm target thickness
Film, ALD technological parameter are as follows: 200 DEG C of technological temperature, (logical TMA 2s, vacuumizes 2s to ALD process cycle, purges 2s, leads to O32s,
2s is purged, 2s is vacuumized) total 12s.Please refer to the block diagram of Fig. 7.
Process results are gained film thickness 22nm, uniformity 2% in piece.
Embodiment five
It carries out 200 circulation films using vacuum-pumping type ALD technique to grow, to prepare the aluminium oxide of 20nm target thickness
Film, ALD technological parameter are as follows: 200 DEG C of technological temperature, (logical TMA 2s, purges 1s to ALD process cycle, vacuumizes 2s, purges 1s, leads to
O32s purges 1s, vacuumizes 2s, purges 1s) total 12s.Please refer to the block diagram of Fig. 8.
Process results are gained film thickness 19.5nm, uniformity 0.5% in piece.
Embodiment six
It carries out 200 circulation films using vacuum-pumping type ALD technique to grow, to prepare the aluminium oxide of 20nm target thickness
Film, ALD technological parameter are as follows: 200 DEG C of technological temperature, ALD process cycle (logical TMA 2s, vacuumizes 1s, purges 2s, vacuumizes 1s,
Logical O32s, vacuumizes 1s, purges 2s, vacuumizes 1s) total 12s.Please refer to the block diagram of Fig. 9.
Process results are gained film thickness 19.5nm, uniformity 0.5% in piece.
Embodiment seven
It carries out 200 circulation films using variable-flow formula ALD technique to grow, to prepare the aluminium oxide of 20nm target thickness
Film, ALD technological parameter are as follows: 200 DEG C of technological temperature, ALD process cycle (logical TMA 2s, 6slm N2Purge 2s, 9slm N2Purging
2s leads to O32s, 3slm N2Purge 2s, 6slm N2Purge 2s) total 12s.Please refer to the block diagram of Figure 10.
Process results are gained film thickness 20.5nm, uniformity 1.5% in piece.
In conclusion the present invention is by changing reaction chamber with the different ALD technology modes of vacuum-pumping type or variable-flow formula
Interior purge gas air inflow forms the disturbance of airflow field in chamber, can effectively improve to superfluous reaction source and reaction by-product
The purging effect of object reduces the process time of film growth cycle, improves production efficiency；On this basis, parasitic CVD can be reduced
Reaction, and ALD processing quality can be improved, so that uniformity of film is improved.
Above-described to be merely a preferred embodiment of the present invention, the patent that the embodiment is not intended to limit the invention is protected
Range is protected, therefore all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, similarly should be included in
In protection scope of the present invention.
Claims (5)
1. a kind of implementation method for preparing film using technique for atomic layer deposition, which comprises the following steps:
Step 1: the first reaction source is passed through into reaction chamber；
Step 2: in a manner of alternate variable-flow, it is passed through purge gas into reaction chamber, carries out first time gas purging；
Step 3: second of reaction source is passed through into reaction chamber；
Step 4: in a manner of alternate variable-flow, it is passed through purge gas into reaction chamber, carries out second of gas purging；
Wherein, the variable-flow mode includes:
Mode C: it is passed through the purge gas of first flow；
Mode D: it is passed through the purge gas of second flow；
The alternation method of the C in a manner of, mode D carry out first time gas purging；And
Mode E: it is passed through the purge gas of third flow；
Mode F: it is passed through the purge gas of the 4th flow；
The alternation method of the E in a manner of, mode F carry out second of gas purging.
2. the implementation method according to claim 1 for preparing film using technique for atomic layer deposition, which is characterized in that mode
C, the progress of mode D in no particular order, mode E, mode F progress in no particular order.
3. the implementation method according to claim 1 or 2 for preparing film using technique for atomic layer deposition, which is characterized in that
Mode C, mode D alternately one are to several times, and mode E, mode F alternately one are to several times.
4. the implementation method according to claim 1 for preparing film using technique for atomic layer deposition, which is characterized in that first
Flow is less than second flow, and third flow is less than the 4th flow.
5. the implementation method according to claim 1 or 4 for preparing film using technique for atomic layer deposition, which is characterized in that
First flow is greater than third flow, and second flow is greater than the 4th flow.
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| CN110396676B (en) * | 2018-04-24 | 2021-07-13 | 北京北方华创微电子装备有限公司 | Atomic layer deposition equipment and method |
| CN111101115B (en) * | 2018-10-25 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Gas path switching device, control method thereof and semiconductor processing equipment |
| CN111218668B (en) * | 2018-11-27 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Semiconductor processing apparatus and thin film deposition method |
| CN109576675B (en) * | 2019-01-15 | 2021-08-13 | 北京北方华创微电子装备有限公司 | Atomic layer deposition apparatus and method |
| CN112420731B (en) * | 2020-11-17 | 2021-12-17 | 长江存储科技有限责任公司 | Method for forming thin film layer in deep hole and method for manufacturing semiconductor device |
| CN114686851A (en) * | 2020-12-25 | 2022-07-01 | 中国科学院微电子研究所 | Plasma enhanced atomic layer deposition method and surface film forming method of groove/hole |
| CN114959646A (en) * | 2022-04-08 | 2022-08-30 | 普乐新能源科技(徐州)有限公司 | Excellent ALD coating process |
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