CN103022864B - Tunable narrow-linewidth array single-frequency fiber laser - Google Patents

Tunable narrow-linewidth array single-frequency fiber laser Download PDF

Info

Publication number
CN103022864B
CN103022864B CN201210535987.8A CN201210535987A CN103022864B CN 103022864 B CN103022864 B CN 103022864B CN 201210535987 A CN201210535987 A CN 201210535987A CN 103022864 B CN103022864 B CN 103022864B
Authority
CN
China
Prior art keywords
array
optical fiber
laser
output
fiber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210535987.8A
Other languages
Chinese (zh)
Other versions
CN103022864A (en
Inventor
徐善辉
杨中民
杨昌盛
冯洲明
张勤远
姜中宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hengqin Firay Sci Tech Co ltd
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN201210535987.8A priority Critical patent/CN103022864B/en
Priority to PCT/CN2012/086891 priority patent/WO2014089858A1/en
Publication of CN103022864A publication Critical patent/CN103022864A/en
Application granted granted Critical
Publication of CN103022864B publication Critical patent/CN103022864B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/04Arrangements for thermal management
    • H01S3/042Arrangements for thermal management for solid state lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2383Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • H01S3/06704Housings; Packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • H01S3/06754Fibre amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09Processes or apparatus for excitation, e.g. pumping
    • H01S3/091Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/1028Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02325Mechanically integrated components on mount members or optical micro-benches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Abstract

The invention provides a tunable narrow-linewidth array single-frequency fiber laser. The fiber laser comprises a semiconductor laser chip array portion, a tunable narrow-linewidth array single-frequency fiber laser array portion and a miniature short fiber power amplification portion. The tunable narrow-linewidth array single-frequency fiber laser can simultaneously achieve output of array single-frequency fiber lasers with 100GHz laser wavelength channel spacing, the single-transverse mode power is larger than or equal to 100mW, the signal to noise ratio is larger than or equal to 65dB, and the narrow-linewidth is smaller than or equal to 10kHz. A tunable function of central wavelength (or output ways) of each narrow-linewidth array single-frequency fiber laser output unit can be effectively achieved based on modes such as precise temperature control technology and selectivity pumping source working control, and accordingly real-time and effective tunable performance of output wavelength covering scopes formed by single-frequency fiber lasers in a narrow-linewidth array mode can be achieved. The tunable narrow-linewidth array single-frequency fiber laser can be widely used for coherent light communication and the application field that high-precision sensing and detection are carried out on a plurality of goals.

Description

A kind of tunable narrow linewidth array single frequency optical fiber laser
Technical field
The present invention relates to the applied optical-fiber lasers in field such as coherent optical communication, Fibre Optical Sensor and optical fiber remote sensing, especially a kind of tunable narrow linewidth array single-frequency fiber laser.
Background technology
Narrow-linewidth single frequency laser is an important directions of fiber laser development, it has utmost point narrow linewidth, low noise, excellent coherence, is widely used in the fields such as coherent optical communication, long distance and high-precision sensing, laser ranging and instruction and material technology.Especially for coherent optical communication, the spectral line width of General Requirements LASER Light Source is extremely narrow, and (live width is by the lowest bit error rate that directly determines can reach in communication system, must reduce as far as possible), high, the multi-wavelength of frequency stability or tunable wave length output (meeting multichannel work, superelevation message capacity bandwidth).Wherein narrow-linewidth single frequency optical-fiber laser spectral line width can reach 10 -8nm, than narrow 2 orders of magnitude of the live width of existing best narrow linewidth Distributed Feedback Laser, than narrow 5~6 orders of magnitude of the live width of DWDM signal optical source in current optical communication network.Therefore, develop tunable kHz magnitude narrow-line width single frequency optical fiber laser imperative.
Realize the output of narrow-linewidth single frequency optical-fiber laser, reasonably optical texture design is most important.At present, commercial narrow-linewidth single frequency optical-fiber laser, the general gain working media of the highly doped quartz substrate optical fiber of rare earth ion as single-frequency optical-fiber laser that adopt, in conjunction with short straight F-P cavity configuration mode, but the concentration that is limited by doping with rare-earth ions cannot further improve and the factor such as single-frequency laser resonator is long, the highest single-frequency optical-fiber laser that can only export several mW magnitudes, and live width is more difficult accomplishes below 10kHz.
But, adopt the gain working media of rare earth ion highly doped multicomponent glass matrix optical fiber as single-frequency laser, can effectively realize power output and be greater than the single-frequency optical-fiber laser output that 100mW, live width are less than 2kHz.For example: adopt the long Yb codoped phosphate optical fiber of 2cm, realized power output and be greater than that 200mW, live width are less than 2kHz, wavelength is the single-frequency optical-fiber laser output report [J. Lightwave Technol., 2004,22:57] of 1.5 μ m.In addition, 2004, Alexandria university of the U.S. and NP photon company have applied for high power narrow linewidth single-frequency laser system patent [publication number: US 2004/0240508 A1], based on microchip laser resonator structure, but its desired single frequency laser does not have full fiberize, tunable wave length and array feature.2011, American I PG company has applied for high power narrow linewidth fiber laser patent [publication number: US 7903696 B2], based on 2 ultrashort Simple Harmonics chamber output low-power narrow-linewidth single frequency laser signals, carry out laser power amplification by common erbium-doped fiber amplifier and High Power Double-Clad Fiber Amplifiers respectively, but its desired fiber laser do not have tunable wave length and array feature.
Summary of the invention
The object of the invention is to solve the problem of prior art aspect, and a kind of tunable narrow linewidth array single frequency optical fiber laser is provided.The present invention utilizes respectively highly doped and high gain characteristics, the semiconductor laser chip array of multicomponent glass optical fiber array to provide pump energy, narrow linewidth optical fiber optical grating array to carry out frequency-selecting, adopt short straight F-P cavity configuration design, in conjunction with accurate temperature control technology and selectivity pumping source job control mode, recycle miniature short fiber power amplifier technology, can effectively realize tunable kHz magnitude (as≤100kHz) narrow linewidth array single-frequency optical-fiber laser output.The present invention is achieved through the following technical solutions.
A kind of tunable narrow linewidth array format single frequency optical fiber laser, it comprises semiconductor laser chip array, collimating lens coupled system, multicomponent glass optical fiber array, narrow band fiber bragg grating array, high power semiconductor lasers chip, protects inclined to one side wave multiplexer, optical fiber front end plated film or the band optical fiber grating array of the inclined to one side Active Optical Fiber of the short guarantor of high-gain, optical isolator, the inclined to one side tail optical fiber of guarantor, thermoelectric refrigerating unit TEC, thermoelectric refrigerating unit TEC, heat sink and multicomponent glass optical fiber array, the output of semiconductor laser chip array is connected with collimating lens coupled system, collimating lens coupled system and multicomponent glass optical fiber array plated film end face or band optical fiber grating array are of coupled connections, multicomponent glass optical fiber array plated film end face or band optical fiber grating array are connected with multicomponent glass optical fiber array, multicomponent glass optical fiber array is connected with the input of narrow band fiber bragg grating array, the output of narrow band fiber bragg grating array is connected with the signal input part of protecting inclined to one side wave multiplexer, the output of high power semiconductor lasers chip is connected with the inclined to one side wave multiplexer pumping input of guarantor, the signal output part of protecting inclined to one side wave multiplexer is connected with the inclined to one side Active Optical Fiber of the short guarantor of high-gain, the inclined to one side Active Optical Fiber of the short guarantor of high-gain is connected with the input of optical isolator, the output of optical isolator is connected with the inclined to one side tail optical fiber of guarantor, it is upper that semiconductor laser chip array is arranged on the first thermoelectric refrigerating unit TEC, and multicomponent glass optical fiber array, narrow band fiber bragg grating array are arranged on the second thermoelectric refrigerating unit TEC, the component units number of each array is n, and n >=2(is as 2 ~ 120), the connected mode between array and array is being connected one to one of component units, described collimating lens coupled system comprises fast axis collimation lens and n slow axis collimating lens, and fast axis collimation lens and each slow axis collimating lens are of coupled connections.
Further optimize, described tunable narrow linewidth array format single frequency optical fiber laser also comprises heat sink, all building blocks of described tunable narrow linewidth array format single frequency optical fiber laser be all fixedly encapsulated in heat sink in.
Further optimize, the fibre core composition of the multicomponent glass optical fiber in multicomponent glass optical fiber array is phosphate glass, and its chemical composition is: 65P 2o 5-9Al 2o 3-20BaO-4La 2o 3-2Nd 2o 3; The host material of multicomponent glass optical fiber comprises phosphate glass, silicate glass, germanate glass and tellurate glass, (assembly of one or more in lanthanide ion, transition metal ions or other metal ions) of the rare earth luminous ion of fibre core doped with high concentration, the doping content of rare earth ion is greater than 1 × 10 19ions/cm 3, wherein the doping content of ytterbium is greater than the doping content of erbium.
Further optimize, the fibre core of the multicomponent glass optical fiber in multicomponent glass optical fiber array is circular, and core diameter is 3 ~ 15 μ m, and cladding diameter is 125 ~ 440 μ m; The refractive index of fibre core is N 1, the refraction index profile of covering is N 2, and meet relation: N 1>N 2.
Further optimize, the optical fiber front end plated film of multicomponent glass optical fiber array or band optical fiber grating array and multicomponent glass optical fiber array and narrow band fiber bragg grating array are connected to form multiple single-frequency optical-fiber laser output units; Each chip unit in semiconductor laser chip array carries out pumping to single-frequency optical-fiber laser output unit accordingly, each single-frequency optical-fiber laser output unit is arranged on one independently on thermoelectric refrigerating unit TEC, each semiconductor laser chip unit of semiconductor laser chip array is also installed in one independently on thermoelectric refrigerating unit TEC, by thermoelectric refrigerating unit TEC, each single-frequency optical-fiber laser output unit being carried out to critically temperature control regulates, thereby control single-frequency optical-fiber laser output wavelength, realize the fine tuning of Output of laser centre wavelength scope; The unlatching of the one or more semiconductor laser chips of Selective Control unit or close, realizes the tunable of output way, makes described single-frequency optical-fiber laser output unit become tunable narrow-linewidth single frequency optical-fiber laser output unit; Multiple tunable narrow-linewidth single frequency optical-fiber laser output units, by protecting inclined to one side wave multiplexer, take to close ripple mode and form array output, form tunable narrow linewidth array single-frequency optical-fiber laser output.
Further optimize, the optical fiber front end plated film of described multicomponent glass optical fiber array or band optical fiber grating array are thoroughly high to pump light wavelength, and transmissivity is between 80% ~ 99%; High anti-to laser signal wavelength, reflectivity is 80 ~ 99%; In narrow band fiber bragg grating array, each root narrow band fiber bragg grating is to the selective reflection of laser signal wavelength, and the reflectivity of its central wavelength is 5 ~ 90%; The foveal reflex wavelength of each root narrow band fiber bragg grating is positioned at the optical fiber front end plated film of multicomponent glass optical fiber array or the reflection spectral line of band optical fiber grating.
Further, described film or band optical fiber grating pair laser signal wavelength are high anti-, and reflectivity is greater than 85%; Thoroughly high to pump light wavelength, transmissivity is greater than 85%.
Further optimize, the semiconductor laser chip unit of described semiconductor laser chip array is more than one in the semiconductor laser chip of limit emitting structural semiconductor laser chip or other packing forms, described semiconductor laser chip unit output parameter is pumping wavelength 800~1500nm, output pump power is greater than 40mW, and pump mode is that semiconductor laser chip unit adopts forward pumping, backward pump, front and back two directional pump or the combination pump mode between them.
Further optimize, described high power semiconductor lasers chip output parameter is pumping wavelength 800~1500nm, and output pump power is greater than 200mW, and pump mode is that high power semiconductor lasers chip adopts forward pumping or backward pump mode; The inclined to one side tail optical fiber of described guarantor is monomode fiber, and its core diameter is 4~15 μ m, and cladding diameter is 125 μ m, and numerical aperture is 0.1~0.3.
Further optimize, the inclined to one side wave multiplexer of described guarantor is that plane-based plate hight is protected inclined to one side wave multiplexer, it is the Highgrade integration optical device that utilizes planar optical waveguide photoetching and ion etching technology to make, its type is (1+ m) × 1, signal input part port number m >=1, exports through signal output part after the pump light of m input signal (output signal of tunable narrow-linewidth single frequency optical-fiber laser unit) and a high power semiconductor lasers chip is closed to ripple again.
Further optimize, the inclined to one side Active Optical Fiber of the short guarantor of described high-gain is high-gain multicomponent glass polarization maintaining optical fibre, and cross sectional shape is panda face structure, and fibre core is circular, and core diameter is generally 2 ~ 15 μ m; Two panda eye symmetry arrangement and with fibre core spacing from being 10 ~ 40 μ m, panda eye diameter is 10 ~ 30 μ m; The inclined to one side Active Optical Fiber of the short guarantor of high-gain (9) covering is circular, and diameter is 125 ~ 440 μ m, and its fibre core composition is phosphate glass, and chemical composition is: 65P 2o 5-9Al 2o 3-20BaO-4La 2o 3-2Nd 2o 3its host material comprises phosphate glass, silicate glass, germanate glass or tellurate glass, (assembly of one or more in lanthanide ion, transition metal ions or other metal ions) of the rare earth luminous ion of its fibre core doped with high concentration, the doping content of rare earth ion is greater than 1 × 10 19ions/cm 3, the doping content of ytterbium is greater than the doping content of erbium.
Further optimize, described collimating lens coupled system comprises fast axis collimation lens and slow axis collimating lens, and for graded index profile microlens structure, cylindrical, diameter of phi is greater than 1mm, and thickness d is greater than 0.5mm.
Further optimize, multicomponent glass optical fiber array is as the working media of single-frequency optical-fiber laser, it is 0.5 ~ 20 cm that described multicomponent glass optical fiber uses length, and it specifically uses length to carry out different selections according to the watt level of single-frequency optical-fiber laser output unit, live width size requirements.
Further, the resonant cavity of described each single-frequency optical-fiber laser output unit adopts short bore configurations, is made up of the front Effect of Back-Cavity Mirror form of F-P cavity configuration each root multicomponent glass optical fiber end face coating or a band optical fiber grating (optional) and narrow band fiber bragg grating.Described front cavity mirror plates film by one end (front end) end face of each root multicomponent glass optical fiber or band optical fiber grating (optional) completes.The foveal reflex wavelength of described each root narrow band fiber bragg grating is positioned at the reflection spectral line of multicomponent glass optical fiber end face coating film or band optical fiber grating (optional).Narrow band fiber bragg grating is to the selective reflection of laser signal wavelength (being part transmission), and centre wavelength reflectivity is 5 ~ 90%, its Effect of Back-Cavity Mirror as single-frequency optical fiber laser resonant cavity and output coupling components and parts.
Further optimize, each single-frequency optical fiber laser resonant cavity (mainly being formed by multicomponent glass optical fiber and fiber grating), be placed in one and independently on thermoelectric refrigerating unit TEC, carry out accurate temperature control adjusting, its temperature control precision < ± 0.01 DEG C, realizes the fine tuning of the laser center wavelength of single-frequency optical-fiber laser output unit by accurate temperature control.
Further optimize, between described optical device or optical fiber, connected mode is by after its corresponding fiber end face of grinding and polishing, adopts mechanical splice coupling, or adopts heat sealing machine melting butt coupling.After the power amplification of described tunable narrow linewidth array single-frequency optical-fiber laser, then through optical isolator, protect the output of inclined to one side tail optical fiber, wherein optical isolator ensures the normal feedback of light path and suppresses the reflection of end face light, improves power stability and the reliability of Output of laser.
Further optimize, it is the Highgrade integration optical device that utilizes planar optical waveguide photoetching and ion etching technology to make that described plane-based plate hight is protected inclined to one side wave multiplexer, its type is (1+ m) × 1, (wherein m >=1, represent signal input part port number, as (1+1) × 1, (1+10) × 1, (1+40) × 1 etc.), m tunable narrow-linewidth single frequency optical-fiber laser unit can be closed to ripple with the pumping laser of a high power semiconductor lasers chip together with, export through its signal output part.
It is heat sink upper that described light path and components and parts are fixedly encapsulated in a metal material, effectively carries out heat dissipation, the accumulation of heat problem while avoiding tunable narrow linewidth array single-frequency optical-fiber laser work, the Stability and dependability of guarantee power output, laser work wavelength.
Described collimating lens coupled system is made up of a fast axis collimation lens unit and slow axis collimator lens array, the divergent state pumping laser of each LD chip unit output is through fast axis collimation lens unit focussed collimated, and then the pumping laser after collimation focuses on and is coupled into optical fiber through slow axis collimator lens array again.
The some work principle explanation of such scheme of the present invention: first, select semiconductor laser chip array (by multiple independent semiconductor laser chip cell formations) to carry out pumping to single-frequency optical fiber laser resonant cavity array (mainly being formed by multicomponent glass optical fiber array and optical fiber optical grating array), jointly realize the single-frequency optical-fiber laser output unit of array format.Then by temperature control micromodule---thermoelectric refrigerating unit (TEC chip) is carried out critically temperature control to each single-frequency optical-fiber laser output unit and is regulated, thereby can control single-frequency optical-fiber laser output wavelength, realize the fine tuning of Output of laser centre wavelength scope; In addition, the output of whether simultaneously working of one or more wavelength of Selective Control, realizes the tunable of output way (output wavelength number), and these control modes can realize the tunable formal output of narrow-linewidth single frequency optical-fiber laser.Secondly, multiple tunable narrow-linewidth single frequency optical-fiber laser output units, protect inclined to one side wave multiplexer by plane-based plate hight, take to close ripple mode and form array output, form tunable narrow linewidth array single-frequency optical-fiber laser output, but its power output are generally lower.Finally, adopt miniature short fiber power amplifier technology, the pumping laser of tunable narrow linewidth array single-frequency optical-fiber laser (signal seed laser) and a high power semiconductor lasers chip is closed to ripple together, enter one section of inclined to one side Active Optical Fiber of the short guarantor of high-gain and carry out power amplification to its power output and reach certain requirement, can realize the tunable narrow linewidth array single-frequency optical-fiber laser output of general application requirements.
Compared with prior art, tool of the present invention has the following advantages and remarkable result: high-gain multicomponent glass optical fiber array is as the working media of laser, and multicomponent glass optical fiber end face coating or band optical fiber grating (optional) and narrow band fiber bragg grating form the front Effect of Back-Cavity Mirror of short F-P cavity configuration.Under the continuous pumping excitation of semiconductor laser chip, rare earth luminous ion generation population inversion in multicomponent glass optical fiber fibre core, produces stimulated radiation flashlight, under the mirror effect of chamber, repeatedly oscillatory feedback repeatedly being amplified back and forth of flashlight, and finally produce Laser output.Because laserresonator chamber length only has a centimetre magnitude, the longitudinal mode spacing in chamber can reach GHz, narrow to 0.08nm when narrow band fiber bragg grating 3dB reflectance spectrum, can realize stable single longitudinal mode (single-frequency) Laser output.Continuing increases pumping light power, finally can realize the narrow-linewidth single frequency optical-fiber laser output of kHz magnitude.
Each narrow-linewidth single frequency optical-fiber laser output unit is placed in respectively to one independently on thermoelectric refrigerating unit TEC, carry out accurate temperature control adjusting, because extraneous thermal stress affects the reflection wavelength of fiber grating and causes the variation that laserresonator chamber is long, can cause the variation (skew) of laser center wavelength, but the optical maser wavelength offset ranges that variations in temperature causes is limited, can realize the fine tuning of the optical maser wavelength of each narrow-linewidth single frequency optical-fiber laser output unit; In addition, select wherein one or more LD chip units open or close, selectivity loads pumping source operating state, controls the output of whether simultaneously working of one or more wavelength, realizes the tunable of output wavelength (output way).Based on accurate temperature control technology and selectivity pumping source job control mode, can effectively realize the tunable of each narrow-linewidth single frequency optical-fiber laser output unit, multiple tunable narrow-linewidth single frequency optical-fiber laser output units take to close ripple mode (forming array format output), can realize tunable narrow linewidth array single-frequency optical-fiber laser output.
By miniature short fiber power amplification funtion part, adopt a plane-based plate hight to protect inclined to one side wave multiplexer, by each tunable narrow-linewidth single frequency optical-fiber laser (signal seed laser) output unit and the pumping laser of a high power semiconductor lasers chip close ripple to together with, enter one section of inclined to one side Active Optical Fiber of the short guarantor of high-gain; First, under the continuous pumping of high power semiconductor lasers chip, highly doped rare earth luminous ion generation population inversion in the inclined to one side Active Optical Fiber fibre core of the short guarantor of high-gain, in the time closing tunable narrow linewidth array single-frequency optical-fiber laser (signal seed laser) after ripple and pass through, metastable particle transits to ground state with the form of stimulated radiation, and discharge and the identical complete same photon of tunable narrow linewidth array single-frequency optical-fiber laser, thereby realize the power amplification of tunable narrow linewidth array single-frequency optical-fiber laser, make power output reach requirement.By optimizing the input power of narrow linewidth array single-frequency optical-fiber laser signal, the use length that high-gain is protected inclined to one side Active Optical Fiber, pumping wavelength and the pump power etc. of high power semiconductor lasers, can obtain high s/n ratio, moderate, the low noise tunable narrow linewidth array single-frequency optical-fiber laser output of power output.
brief description of the drawings
Fig. 1 is tunable narrow linewidth array single-frequency fiber laser principle schematic in the embodiment of the present invention.
Fig. 2 is TEC temperature control mode and encapsulation schematic diagram in the embodiment of the present invention.
Fig. 3 is Yb codoped phosphate polarization maintaining optical fibre structural representation in the embodiment of the present invention.
In figure: 1-semiconductor laser LD chip, 2-fast axis collimation lens, 3-slow axis collimating lens, 4-multicomponent glass optical fiber (Yb codoped phosphate optical fiber) plated film end face, 5-multicomponent glass optical fiber (Yb codoped phosphate optical fiber), 6-narrow band fiber bragg grating, 7-high power semiconductor lasers chip, 8-plane-based plate hight is protected inclined to one side wave multiplexer, the inclined to one side Active Optical Fiber of the short guarantor of 9-high-gain, 10-optical isolator, 11-protect inclined to one side tail optical fiber, the 12-the first thermoelectric refrigerating unit TEC, the 13-the second thermoelectric refrigerating unit TEC, 14-heat sink.
Embodiment
Below in conjunction with specific embodiment and accompanying drawing, explaination that the present invention is further illustrated, but be not limited to this execution mode.
As shown in Figure 1, in tunable narrow linewidth array single-frequency fiber laser, laser Effect of Back-Cavity Mirror is used plated film mode, and laser front cavity mirror uses narrow band fiber bragg grating, and each narrow-linewidth single frequency optical-fiber laser output unit adopts semiconductor laser forward pumping mode; Miniature short fiber power amplification unit adopts high power semiconductor lasers chip 7 forward pumping modes, semiconductor laser chip array 1 comprise 40 (1 ~ n, n=40) semiconductor laser (LD) chip units form with collimating lens coupled system together with forming array.Wherein each LD chip unit output and fast axis collimation lens 2 are of coupled connections, fast axis collimation lens 2 is of coupled connections with each slow axis collimating lens 3, slow axis collimating lens 3 focuses on and is of coupled connections with multicomponent glass optical fiber (Yb codoped phosphate optical fiber) plated film end face 4, and the low-loss that realizes so respectively 1 to 40 narrow-linewidth single frequency optical-fiber laser output unit of 40 LD chip units is of coupled connections.Wherein each LD chip unit carries out precision temperature control by the first thermoelectric refrigerating unit TEC 12 independently, ensures its job stability.
In tunable narrow linewidth array single-frequency fiber laser, by 40 tunable narrow-linewidth single frequency optical-fiber laser cell formation array formats, the optical maser wavelength channel spacing of each narrow linewidth array single-frequency optical-fiber laser unit is 100GHz, and it optical fiber front end plated film 4(that comprises multicomponent glass optical fiber array adopts Yb codoped phosphate optical fiber plated film), multicomponent glass optical fiber array 5(adopts Yb codoped phosphate optical fiber), narrow band fiber bragg grating array 6.The semiconductor laser chip array being made up of 40 LD chip units carries out pumping to 40 single-frequency optical-fiber laser unit respectively, wherein 40 Yb codoped phosphate optical fiber front end end face coatings connect together with 40 Yb codoped phosphate optical fiber integrallies respectively, 40 Yb codoped phosphate optical fiber are of coupled connections with narrow band fiber bragg grating array 6 inputs respectively, narrow band fiber bragg grating array 6 outputs with protect inclined to one side wave multiplexer 8(and adopt plane-based plate hight to protect inclined to one side wave multiplexer) signal input part is connected.
Wherein high-gain Yb codoped phosphate optical fiber, as the gain working media of laser, specifically uses length to determine according to single-frequency laser power output size and live width size, and it is 1cm that this example is used length, and generally using length is 0.5 ~ 20 cm.Rare earth luminous ion erbium and the ytterbium of doped with high concentration, its doping content is respectively 2 × 10 20ions/cm 3, 4.0 × 10 20ions/cm 3, its core diameter is that 6 μ m and cladding diameter are 125 μ m, fibre core main component is phosphate glass component (composition: 65P 2o 5-9Al 2o 3-20BaO-4La 2o 3-2Nd 2o 3), rare earth luminous ion is uniform high-concentration dopant in fibre core.Yb codoped phosphate optical fiber 5 is to make preform by boring method, rod-in-tube technique, and drawing forms in fiber drawing tower.
Yb codoped phosphate optical fiber one end end face coating 4(realizes for the anti-Effect of Back-Cavity Mirror of height of 1.5 μ m signal light wavelengths) and narrow band fiber bragg grating array 6 form the front Effect of Back-Cavity Mirror of short F-P cavity configuration.The foveal reflex wavelength of the each narrow band fiber bragg grating in narrow band fiber bragg grating array 6 is positioned at the gain spectral of laser working medium, and be positioned at the high reflectance spectrum of Yb codoped phosphate fiber end face plated film rete, reflectivity is 80%, and general reflectivity is 5 ~ 90%.Reflect the crucial optical parametric of the gratings such as spectrum width, centre wavelength, reflectivity by the 3dB of accurate control fiber grating, and strict control gate section length and reflectance spectrum side lobe effect, whole single-frequency laser resonator length is controlled at below 2 cm, thereby can ensure to be less than 0.05nm in the reflectance spectrum live width of narrow band fiber bragg grating, in laser cavity, only there is a single longitudinal mode pattern, and occur without mode hopping and mode competition phenomenon.With injecting pump light in semiconductor laser chip unit 1, adopt forward pumping mode, pump light is input in the high-gain array Yb codoped phosphate fiber core in laserresonator, make its highly doped rare earth luminous ion generation population inversion, produce the laser signal of stimulated radiation, flashlight is under the feedback effect of the front Effect of Back-Cavity Mirror of short F-P cavity configuration, repeatedly vibrate back and forth and repeatedly amplified, before laser power is saturated, along with the continuous enhancing of pump power, single-frequency laser live width will constantly narrow, finally can realize the narrow-linewidth single frequency optical-fiber laser output unit of kHz magnitude.
40 narrow-linewidth single frequency optical-fiber laser output units are placed in respectively to 40, and independently the second thermoelectric refrigerating unit TEC13 is upper, carries out accurate temperature control adjusting, can realize the fine tuning of the laser center wavelength of narrow-linewidth single frequency optical-fiber laser output unit; In addition, select wherein one or more LD chip units open or close, selectivity loads pumping source operating state, can realize the tunable of output wavelength (output way).Based on temperature control technology and selectivity pumping source job control mode, can effectively realize the tunable of narrow-linewidth single frequency optical-fiber laser, 40 tunable narrow-linewidth single frequency optical-fiber laser output units take to close ripple mode (forming array format output), can realize tunable narrow-linewidth single frequency laser array formal output.
As shown in Figure 2, miniature short fiber power amplification unit, by high power semiconductor lasers chip 7, protect inclined to one side wave multiplexer 8, the inclined to one side Active Optical Fiber 9 of the short guarantor of high-gain forms.Wherein, the inclined to one side Active Optical Fiber 9 of the short guarantor of high-gain adopts the short Yb codoped phosphate polarization maintaining optical fibre of high-gain, the end face of narrow band fiber bragg grating array 6 is carried out to grinding and polishing, narrow band fiber bragg grating array 6 outputs and plane-based plate hight are protected signal input part in inclined to one side wave multiplexer 8 and are of coupled connections, high power semiconductor lasers chip 7 outputs and plane-based plate hight are protected pumping input in inclined to one side wave multiplexer 8 and are of coupled connections, and plane-based plate hight is protected inclined to one side wave multiplexer 8 signal output parts and Yb codoped phosphate polarization maintaining optical fibre is of coupled connections.Protect inclined to one side wave multiplexer 8 by plane-based plate hight, tunable narrow linewidth array single-frequency optical-fiber laser output unit signal and a high power semiconductor lasers chip 7 are carried out to the photosynthetic ripple of flashlight pumping, among entering one section of short Yb codoped phosphate polarization maintaining optical fibre of high-gain, carry out power amplification, amplify one or more narrow-linewidth single frequency optical-fiber laser signal.The single-frequency optical-fiber laser signal output part amplifying is connected with the input of optical isolator 10, the output of optical isolator 10 is connected with the input of protecting inclined to one side tail optical fiber 11, finally by the tunable narrow linewidth array single-frequency optical-fiber laser of protecting inclined to one side tail optical fiber 11 output stable outputs, all light paths and components and parts are fixedly encapsulated in a metal material heat sink 14 and dispel the heat.
As shown in Figure 3, the core diameter of Yb codoped phosphate polarization maintaining optical fibre is 8 μ m, opal diameter is 15 μ m, with fibre core spacing from being 25 μ m, cladding diameter is 125 μ m, the use length of optimizing high-gain Yb codoped phosphate polarization maintaining optical fibre, this example is 5cm, obtains the tunable narrow linewidth array format single-frequency optical-fiber laser output of signal to noise ratio >=65dB, power output >=100mW, Output of laser live width≤10 kHz.

Claims (10)

1. a tunable narrow linewidth array format single frequency optical fiber laser, it is characterized in that comprising semiconductor laser chip array (1), collimating lens coupled system, multicomponent glass optical fiber array (5), narrow band fiber bragg grating array (6), high power semiconductor lasers chip (7), protect inclined to one side wave multiplexer (8), the inclined to one side Active Optical Fiber of the short guarantor of high-gain (9), optical isolator (10), protect inclined to one side tail optical fiber (11), the first thermoelectric refrigerating unit TEC(12), the second thermoelectric refrigerating unit TEC(13), the optical fiber front end plated film (4) of heat sink (14) and band optical fiber grating array or multicomponent glass optical fiber array, the output of semiconductor laser chip array is connected with collimating lens coupled system, collimating lens coupled system and multicomponent glass optical fiber array plated film end face or band optical fiber grating array are of coupled connections, multicomponent glass optical fiber array plated film end face or band optical fiber grating array are connected with multicomponent glass optical fiber array (5), multicomponent glass optical fiber array (5) is connected with the input of narrow band fiber bragg grating array (6), the output of narrow band fiber bragg grating array (6) is connected with the signal input part of protecting inclined to one side wave multiplexer (8), the output of high power semiconductor lasers chip (7) is connected with guarantor's inclined to one side wave multiplexer (8) pumping input, the signal output part of protecting inclined to one side wave multiplexer (8) is connected with the inclined to one side Active Optical Fiber of the short guarantor of high-gain (9), the inclined to one side Active Optical Fiber of the short guarantor of high-gain (9) is connected with the input of optical isolator, the output of optical isolator is connected with the inclined to one side tail optical fiber of guarantor, it is upper that semiconductor laser chip array (1) is arranged on the first thermoelectric refrigerating unit TEC, and multicomponent glass optical fiber array (5), narrow band fiber bragg grating array (6) are arranged on the second thermoelectric refrigerating unit TEC, the component units number of each array is n, n >=2, and the connected mode between array and array is being connected one to one of component units, described collimating lens coupled system comprises fast axis collimation lens (2) and n slow axis collimating lens (3), and fast axis collimation lens (2) is of coupled connections with each slow axis collimating lens (3).
2. the tunable narrow linewidth array format of one according to claim 1 single frequency optical fiber laser, characterized by further comprising heat sink (14), all building blocks of described tunable narrow linewidth array format single frequency optical fiber laser are all fixedly encapsulated in heat sink (14).
3. the tunable narrow linewidth array format of one according to claim 1 single frequency optical fiber laser, the fibre core composition that it is characterized in that the multicomponent glass optical fiber in multicomponent glass optical fiber array (5) is phosphate glass, its chemical composition is: 65P 2o 5-9Al 2o 3-20BaO-4La 2o 3-2Nd 2o 3; The host material of multicomponent glass optical fiber comprises phosphate glass, silicate glass, germanate glass and tellurate glass, the rare earth luminous ion of fibre core doped with high concentration, and the doping content of rare earth ion is greater than 1 × 10 19ions/cm 3, wherein the doping content of ytterbium is greater than the doping content of erbium.
4. the tunable narrow linewidth array format of one according to claim 1 single frequency optical fiber laser, it is characterized in that the fibre core of the multicomponent glass optical fiber in multicomponent glass optical fiber array (5) is for circular, core diameter is 3 ~ 15 μ m, and cladding diameter is 125 ~ 440 μ m; The refractive index of fibre core is N 1, the refraction index profile of covering is N 2, and meet relation: N 1>N 2.
5. the tunable narrow linewidth array format of one according to claim 1 single frequency optical fiber laser, is characterized in that
The optical fiber front end plated film (4) of multicomponent glass optical fiber array or band optical fiber grating array and multicomponent glass optical fiber array (5) and narrow band fiber bragg grating array (6) are connected to form multiple single-frequency optical-fiber laser output units; Each chip unit in semiconductor laser chip array carries out pumping to single-frequency optical-fiber laser output unit accordingly, each single-frequency optical-fiber laser output unit is arranged on one independently on thermoelectric refrigerating unit TEC, each semiconductor laser chip unit of semiconductor laser chip array (1) is also installed in one independently on thermoelectric refrigerating unit TEC, by thermoelectric refrigerating unit TEC, each single-frequency optical-fiber laser output unit being carried out to critically temperature control regulates, thereby control single-frequency optical-fiber laser output wavelength, realize the fine tuning of Output of laser centre wavelength scope; The unlatching of the one or more semiconductor laser chips of Selective Control unit or close, realizes the tunable of output way, makes described single-frequency optical-fiber laser output unit become tunable narrow-linewidth single frequency optical-fiber laser output unit; Multiple tunable narrow-linewidth single frequency optical-fiber laser output units, by protecting inclined to one side wave multiplexer, take to close ripple mode and form array output, form tunable narrow linewidth array single-frequency optical-fiber laser output.
6. the tunable narrow linewidth array format of one according to claim 1 single frequency optical fiber laser, the optical fiber front end plated film (4) or the band optical fiber grating array that it is characterized in that described multicomponent glass optical fiber array are thoroughly high to pump light wavelength, and transmissivity is between 80% ~ 99%; High anti-to laser signal wavelength, reflectivity is 80 ~ 99%; In narrow band fiber bragg grating array (6), each root narrow band fiber bragg grating is to the selective reflection of laser signal wavelength, and the reflectivity of its central wavelength is 5 ~ 90%; The foveal reflex wavelength of each root narrow band fiber bragg grating is positioned at the optical fiber front end plated film of multicomponent glass optical fiber array or the reflection spectral line of band optical fiber grating.
7. the tunable narrow linewidth array format of one according to claim 1 single frequency optical fiber laser, the semiconductor laser chip unit that it is characterized in that described semiconductor laser chip array is more than one in the semiconductor laser chip of limit emitting structural semiconductor laser chip or other packing forms, described semiconductor laser chip unit output parameter is pumping wavelength 800~1500nm, output pump power is greater than 40mW, pump mode is that semiconductor laser chip unit adopts forward pumping, backward pump, front and back two directional pump or the combination pump mode between them.
8. the tunable narrow linewidth array format of one according to claim 1 single frequency optical fiber laser, it is characterized in that described high power semiconductor lasers chip (7) output parameter is pumping wavelength 800~1500nm, output pump power is greater than 200mW, and pump mode is that high power semiconductor lasers chip (7) adopts forward pumping or backward pump mode; The inclined to one side tail optical fiber of described guarantor is monomode fiber, and its core diameter is 4~15 μ m, and cladding diameter is 125 μ m, and numerical aperture is 0.1~0.3.
9. the tunable narrow linewidth array format of one according to claim 1 single frequency optical fiber laser, it is characterized in that the inclined to one side wave multiplexer of described guarantor (8) protects inclined to one side wave multiplexer for plane-based plate hight, it is the Highgrade integration optical device that utilizes planar optical waveguide photoetching and ion etching technology to make, its type is (1+ m) × 1, signal input part port number m >=1, exports through signal output part after the pump light of m input signal and a high power semiconductor lasers chip is closed to ripple again.
10. the tunable narrow linewidth array format of one according to claim 1 single frequency optical fiber laser, it is characterized in that the inclined to one side Active Optical Fiber of the short guarantor of described high-gain (9) is high-gain multicomponent glass polarization maintaining optical fibre, cross sectional shape is panda face structure, fibre core is circular, and core diameter is generally 2 ~ 15 μ m; Two panda eye symmetry arrangement and with fibre core spacing from being 10 ~ 40 μ m, panda eye diameter is 10 ~ 30 μ m; The inclined to one side Active Optical Fiber of the short guarantor of high-gain (9) covering is circular, and diameter is 125 ~ 440 μ m, and its fibre core composition is phosphate glass, and chemical composition is: 65P 2o 5-9Al 2o 3-20BaO-4La 2o 3-2Nd 2o 3, its host material comprises phosphate glass, silicate glass, germanate glass or tellurate glass, the rare earth luminous ion of its fibre core doped with high concentration, the doping content of rare earth ion is greater than 1 × 10 19ions/cm 3, the doping content of ytterbium is greater than the doping content of erbium.
CN201210535987.8A 2012-12-13 2012-12-13 Tunable narrow-linewidth array single-frequency fiber laser Active CN103022864B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201210535987.8A CN103022864B (en) 2012-12-13 2012-12-13 Tunable narrow-linewidth array single-frequency fiber laser
PCT/CN2012/086891 WO2014089858A1 (en) 2012-12-13 2012-12-18 Tunable narrow-linewidth array single-frequency fiber laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210535987.8A CN103022864B (en) 2012-12-13 2012-12-13 Tunable narrow-linewidth array single-frequency fiber laser

Publications (2)

Publication Number Publication Date
CN103022864A CN103022864A (en) 2013-04-03
CN103022864B true CN103022864B (en) 2014-12-03

Family

ID=47971137

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210535987.8A Active CN103022864B (en) 2012-12-13 2012-12-13 Tunable narrow-linewidth array single-frequency fiber laser

Country Status (2)

Country Link
CN (1) CN103022864B (en)
WO (1) WO2014089858A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106532431A (en) * 2016-12-28 2017-03-22 尚华 Laser generation light introduction equipment applied to human body
CN109856111A (en) * 2017-11-30 2019-06-07 福州高意光学有限公司 A kind of array structure Raman spectrometer
CN108303124B (en) * 2018-02-05 2023-09-29 江南大学 Fiber bragg grating demodulation system and method based on static tunable light source
CN109149343A (en) * 2018-08-30 2019-01-04 华南理工大学 A kind of line width controllable optical fibre laser
CN111509534A (en) * 2019-01-31 2020-08-07 深圳大学 Narrow linewidth single-frequency laser light source
CN112653514B (en) * 2019-10-11 2022-07-22 华为技术有限公司 Multi-wavelength light source generator and method of generating multi-wavelength light source
CN111541135A (en) * 2020-05-07 2020-08-14 无锡锐科光纤激光技术有限责任公司 Q-switched pulse fiber laser and preparation method thereof
CN111600184A (en) * 2020-05-20 2020-08-28 华南理工大学 Short cavity laser
CN112414235B (en) * 2020-11-09 2023-04-25 中国工程物理研究院应用电子学研究所 360-degree full-view-field scanning and detecting laser fuze device
CN114552378B (en) 2020-11-20 2023-03-31 中国科学院苏州纳米技术与纳米仿生研究所 Narrow linewidth laser
CN113708205A (en) * 2021-08-28 2021-11-26 光惠(上海)激光科技有限公司 Fiber laser system
CN114665379A (en) * 2022-03-25 2022-06-24 中国工程物理研究院应用电子学研究所 Semiconductor laser device with stable wavelength
CN115390200B (en) * 2022-09-13 2023-07-25 中国电子科技集团公司第五十四研究所 High-speed PAM4 silicon optical modulation module based on narrow linewidth laser
CN115425507A (en) * 2022-09-30 2022-12-02 西安工业大学 Distributed gain high-power all-fiber laser resonant cavity

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0917262B1 (en) * 1997-11-10 2004-02-04 Agere Systems Optoelectronics Guardian Corporation Wavelength selectable laser source
CN101383474A (en) * 2008-10-23 2009-03-11 华南理工大学 Multipath amplifying optical fiber array amplifier
CN101420099A (en) * 2008-11-28 2009-04-29 华南理工大学 Germanate glass optical fiber laser with laser wavelength within 1.7-2.1 mu m
CN101800393A (en) * 2010-04-09 2010-08-11 浙江大学 Integrated array waveguide laser based on diffraction grating
CN202997294U (en) * 2012-12-13 2013-06-12 华南理工大学 Single-frequency fiber laser of tunable narrow linewidth array format

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693925B2 (en) * 2001-04-18 2004-02-17 Chromaplex, Inc Modulatable multi-wavelength fiber laser source
US6606331B2 (en) * 2001-07-09 2003-08-12 Multiwave Networks Portugal, Lda. Step-tunable all-fiber laser apparatus and method for dense wavelength division multiplexed applications
CN101459313B (en) * 2008-12-31 2011-08-17 华南理工大学 Multiple wavelength outputting ultra-narrow wire single frequency optical fiber laser
US7903696B2 (en) * 2008-12-31 2011-03-08 Ipg Photonics Corporation High-power narrowed-linewidth fiber laser system
CN101667710B (en) * 2009-10-09 2011-01-05 北京航空航天大学 Tunable single-frequency single polarization fiber laser based on polarization-preserved fiber grating
CN102361210B (en) * 2011-09-24 2013-06-26 中国人民解放军国防科技大学 Single-frequency ultra-narrow linewidth Brillouin erbium-doped fiber laser

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0917262B1 (en) * 1997-11-10 2004-02-04 Agere Systems Optoelectronics Guardian Corporation Wavelength selectable laser source
CN101383474A (en) * 2008-10-23 2009-03-11 华南理工大学 Multipath amplifying optical fiber array amplifier
CN101420099A (en) * 2008-11-28 2009-04-29 华南理工大学 Germanate glass optical fiber laser with laser wavelength within 1.7-2.1 mu m
CN101800393A (en) * 2010-04-09 2010-08-11 浙江大学 Integrated array waveguide laser based on diffraction grating
CN202997294U (en) * 2012-12-13 2013-06-12 华南理工大学 Single-frequency fiber laser of tunable narrow linewidth array format

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Arjmand, M,et al.Wavelength-Selective Optical Amplifier Based on Microfiber Coil Resonators.《Journal of Lightwave Technology 》.2012,第30卷(第16期),2596-2602. *
Wavelength-Selective Optical Amplifier Based on Microfiber Coil Resonators;Arjmand, M,et al;《Journal of Lightwave Technology 》;20120815;第30卷(第16期);2596-2602 *
Xiaolin Dong,et al.122-W high-power single-frequency MOPA fiber laser in all-fiber format.《Chin. Opt. Lett》.2011,第9卷(第11期),1-3. *
张伟南,等.基于高掺Yb~(3+)磷酸盐光纤的1080nm短腔单频光纤激光器.《激光与光电子学进展》.2012,第49卷(第10期),1-4. *

Also Published As

Publication number Publication date
CN103022864A (en) 2013-04-03
WO2014089858A1 (en) 2014-06-19

Similar Documents

Publication Publication Date Title
CN103022864B (en) Tunable narrow-linewidth array single-frequency fiber laser
CN103956638B (en) A kind of tunable narrow-linewidth single-frequency linearly polarized laser device
US7848368B2 (en) Fiber laser system
Zellmer et al. Double-clad fiber laser with 30 W output power
CN101447637A (en) Single longitudinal-mode optical fiber laser with low noise, narrow linewidth and high power
CN103337778A (en) Frequency modulating single frequency fiber laser
AU2020101195A4 (en) An ultra-wideband high gain multi-core fiber light source
CN102522693A (en) Fiber Raman yellow laser based on main oscillation power amplifier
CN104092087A (en) High-energy short-pulse fiber laser amplifier
CN111129923B (en) Single-frequency and single-polarization optical fiber distributed feedback laser
CN102684045A (en) High-power broadband ASE (Amplified Spontaneous Emission) light source in 1064 nm waveband
US9882341B2 (en) High power single mode fiber laser system for wavelengths operating in 2 μm range
CN104051938A (en) Optical fiber laser device
CN104092095A (en) High-stability ultra-narrow-linewidth single-frequency fiber laser
CN202997294U (en) Single-frequency fiber laser of tunable narrow linewidth array format
CN203871645U (en) Low-noise polarization-maintaining single-frequency fiber laser
CN113675720A (en) High-efficiency single-frequency thulium-doped fiber laser based on in-band pumping
CN105140764A (en) Tunable bandwidth ASE light source
Even et al. High-power double-clad fiber lasers: a review
CN112213813A (en) Ultra-wideband high-gain multi-core optical fiber light source
CN203288929U (en) Frequency modulation single-frequency fiber laser
CN103825180B (en) A kind of low noise protects inclined single frequency optical fiber laser
Bhagavatula et al. Progress in high-power fiber lasers
CN111446612A (en) 2um waveband random fiber laser based on inclined fiber grating
CN202616595U (en) High power broadband amplified spontaneous emission (ASE) light source of 1064 nm wave band

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20230720

Address after: 519031 room 105-24877, No.6 Baohua Road, Hengqin New District, Zhuhai City, Guangdong Province (centralized office area)

Patentee after: HENGQIN FIRAY SCI-TECH CO.,LTD.

Address before: 510640 No. five, 381 mountain road, Guangzhou, Guangdong, Tianhe District

Patentee before: SOUTH CHINA University OF TECHNOLOGY

TR01 Transfer of patent right