CN114665379A - Semiconductor laser device with stable wavelength - Google Patents
Semiconductor laser device with stable wavelength Download PDFInfo
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- CN114665379A CN114665379A CN202210299021.2A CN202210299021A CN114665379A CN 114665379 A CN114665379 A CN 114665379A CN 202210299021 A CN202210299021 A CN 202210299021A CN 114665379 A CN114665379 A CN 114665379A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000013307 optical fiber Substances 0.000 claims abstract description 29
- 238000004891 communication Methods 0.000 claims description 10
- 238000010248 power generation Methods 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 10
- 238000012423 maintenance Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012994 industrial processing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention discloses a semiconductor laser device with stable wavelength, which comprises a power supply, an LD module and an optical fiber beam combiner; the LD modules are arranged in parallel, each LD module is independently connected with one power supply functional module, and the power supply functional modules are connected with a power supply and connected or disconnected with the LD modules through the power supply functional modules; and the output optical fibers of the LD modules are connected with the input arm of the optical fiber combiner, and output light sources through the combiner. The semiconductor laser device with stable wavelength has the advantages of stable wavelength in a full power range, adjustable power step, distributed efficient heat dissipation, high and low temperature environment working resistance, easy maintenance and engineering realization.
Description
Technical Field
The invention relates to a semiconductor laser device with stable wavelength, belonging to the technical field of semiconductor laser.
Background
The semiconductor laser has important application value in the aspects of optical fiber laser pumping source, industrial processing, high-precision laser detection and high-precision molecular absorption. The pumping or absorption efficiency of the semiconductor laser with narrow linewidth and stable wavelength is higher in application, and the demand is increasing. Semiconductor lasers have a problem that the beam quality is poor and the wavelength is affected by power, current, and temperature, as compared with optical fibers or solid-state lasers. The conventional wavelength-stabilized semiconductor laser light source adopts a VBG locking or grating external cavity locking mode, but has the defect of wavelength unlocking under low power. The traditional electric switches are connected in parallel on each laser and are connected in series with each other, the lasers are also connected in series with each other, and the voltage of a plurality of lasers is simultaneously loaded on the same laser due to the time delay or asynchronism of the switches, so that the laser is electrically destroyed.
Aiming at the defects of the existing semiconductor laser, a semiconductor laser with stable wavelength in a full power range is needed, and the problem of lock losing of a traditional VBG locking semiconductor laser module under low power is solved.
Disclosure of Invention
The invention aims to: in view of the above-described problems, the present invention provides a semiconductor laser device having a stable wavelength, which is adjustable in power and can maintain a stable wavelength at each power.
The technical scheme adopted by the invention is as follows:
a semiconductor laser device with stable wavelength comprises a power supply, an LD module and an optical fiber beam combiner;
the LD modules are arranged in parallel, each LD module is independently connected with one power supply functional module, and the power supply functional modules are connected with a power supply and connected or disconnected with the LD modules through the power supply functional modules;
and the output optical fibers of the LD modules are connected with the input arm of the optical fiber combiner, and output light sources through the combiner.
In the invention, the electrical parameters of each power supply functional module are the same, each power supply functional module is equivalent to an independent laser power supply, and the power supply functional modules are not interfered with each other, thereby ensuring the safe and reliable work of the laser. Compared with the traditional lasers which are connected in series, the scheme of the invention is favorable for protecting the lasers from being electrically destroyed, and the adjustment of the light output quantity of the lasers is realized by switching on and off the power supply functional module, so that the power of the laser device is adjusted.
Preferably, the LED module further comprises a TEC module connected with a power supply, and the plurality of LD modules are arranged on the TEC module.
In the scheme, the plurality of lasers are adopted for beam combination, and the heat of each laser is small, so that distributed heat dissipation is realized, and the distributed heat dissipation TEC has the advantage of small heat flux density and can be matched with the heat dissipation performance of the TEC module.
Preferably, the plurality of LD modules are uniformly arranged on the TEC module.
Preferably, the thermoelectric module type thermoelectric module comprises a box body, the power supply and the TEC module are arranged on two sides in the box body, and an air channel is arranged between the power supply and the TEC module.
In the above scheme, the fan is installed to the tip in wind channel, adopts TEC module and forced air cooling's technique to dispel the heat, compares in traditional water-cooling mode, has high environmental suitability's advantage, and the temperature control rate is fast.
Preferably, the power and wavelength parameters of the plurality of LD modules are the same.
Preferably, the power supply function module controls the current of the LD module to be constant.
In the above scheme, the current of the LD module is fixed, and the quantity of light emitted from the LD module is controlled by the power supply function module, so that the wavelength of the output laser is stable and the power is adjustable.
Preferably, the power supply is a dc power supply having a communication function.
Preferably, the power supply is connected with the control system through a communication interface.
Preferably, the control system is an upper computer of a computer or an industrial personal computer.
In the scheme, the power supply is connected with the control system through the communication interface, communication control is performed through the control system, and the on-off of each power supply functional module is controlled to realize the adjustment of the light emitting quantity of the laser.
Preferably, the number of the LD modules is 10-20.
Preferably, the number of the optical LD modules is controlled, so that the power is adjustable and the wavelength is stable.
According to the semiconductor laser device with stable wavelength, optical fiber beam combination is carried out through the plurality of semiconductor laser modules, the current of each semiconductor laser single module is fixed, so that the wavelength is not changed, meanwhile, the number of lasers is gated and controlled by the electric function module, so that the power is adjustable, and the purposes of adjustable power and stable wavelength are achieved.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. the wavelength stability is ensured by fixing the loading current and the temperature of the semiconductor laser, and the power tuning is carried out by gating control of the optical fiber beam combiner and the power supply functional module, so that the wavelength stability under full power is ensured, and the problem of lock losing under low power of the traditional VBG locking semiconductor laser module can be solved;
2. the multiple lasers are adopted for beam combination, and the heat of each laser is small, so that distributed heat dissipation is realized, and the laser has the advantage of small heat flux density and can be matched with the heat dissipation performance of the TEC;
3. the TEC and the air cooling technology are adopted for heat dissipation, and compared with the traditional water cooling mode, the method has the advantages of high environmental adaptability and high temperature control speed.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a semiconductor laser apparatus;
FIG. 2 is a control schematic of a conventional laser apparatus;
fig. 3 is a schematic structural view of the semiconductor laser device.
The mark in the figure is: the device comprises a power supply 1, a 2-LD module, a 3-optical fiber beam combiner, a 4-TEC module, an air duct 5 and a heat sink 6.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
Example 1
As shown in fig. 1, a semiconductor laser device with stable wavelength of the present embodiment includes a power supply, an LD module, and an optical fiber combiner;
the 19 LD modules are arranged in parallel, each LD module is independently connected with a power supply functional module, the power supply functional module is connected with a power supply, and the LD modules connected with the power supply functional module are connected or disconnected;
the output optical fibers of the 19 LD modules are connected with the input arm of a 19X 1 optical fiber beam combiner, and the light source is output through the beam combiner.
Fig. 2 is an electrical connection mode of a conventional laser device, in which an electrical switch is connected in parallel to each laser and connected in series with each other, and the lasers are also connected in series with each other, and due to the delay or asynchronism of the switches, the voltages of multiple lasers are simultaneously applied to the same laser, so that the laser is electrically destroyed.
As shown in fig. 1, in this embodiment, electrical parameters of each power supply functional module are the same, each power supply functional module is equivalent to an independent power supply for the laser after being connected with a power supply, and the power supply functional modules do not interfere with each other, so that safe and reliable operation of the laser can be ensured. The invention realizes the adjustment of the light emitting quantity of the laser through the on-off of the power supply functional module, thereby adjusting the power of the laser device.
Example 2
As shown in fig. 3, the semiconductor laser device with stable wavelength of the present embodiment includes a power supply, an LD module, a TEC module, and an optical fiber combiner;
the power supply and the TEC module are arranged on two sides in the box body, and an air channel and a fan are arranged between the power supply and the TEC module; two rows of 12 LD modules are arranged on the TEC module, each LD module is independently connected with one power supply function module, the voltage of each LD module is 3.6V, 12W power is output under the current of 7A, and the wavelength is 808.1 nm; the LD module is adopted for optical fiber beam combination, and the LD module is fixed on the TEC module for distributed heat dissipation, so that the heat dissipation efficiency of the TEC module is improved;
connecting output optical fibers of 12 LD modules with an output arm of an optical fiber combiner, wherein the optical fiber combiner is connected with a heat sink, the output optical fibers of the LD modules have a core diameter of 100 mu m and an NA of 0.17, the optical fiber combiner adopts a 12 multiplied by 1 combiner, the core diameter of an input optical fiber is 100 mu m, the numerical aperture NA is less than 0.2, the core diameter of an output optical fiber is 400 mu m, and the NA is less than 0.22; the output optical fiber of the optical fiber combiner is output by adopting a standard SMA connector, a flange plate adapter is arranged on a panel of the box body for optical fiber switching, and finally the output end is output by adopting a D80 interface and connected with a collimation head, so that the output light beam can be collimated, and the collimation divergence angle is adjustable;
the power is the DC power supply who possesses communication function, and the power passes through the host computer of communication interface connection industrial computer, carries out communication control through the host computer, realizes the regulation of laser instrument light-emitting quantity through controlling the disconnection of every power function module, can realize the light-emitting of 1, 2, 3 … … 12 laser instrument, and power 12W ~ 130W is stepping adjustable, and the interval is about 12W, realizes that the power of output laser is adjustable.
In this embodiment, the loading current of each LD module controlled by the power supply function module is 7A, and the TEC is controlled by the upper computer to be constant at 28 ℃, so that the wavelength is kept unchanged as the power increases.
In the embodiment, the purpose of direct semiconductor laser output can be achieved by adopting an optical, thermal and electrical integrated structure design and realizing power-up and connection of a communication interface; the light, electricity and heat of the semiconductor laser light source are modularized, so that the semiconductor laser light source is high in integration level and reliability and easy to realize engineering.
In summary, the semiconductor laser device with stable wavelength of the invention has the advantages of stable wavelength in the full power range, adjustable power step, distributed efficient heat dissipation, high and low temperature environment working resistance, easy maintenance and engineering realization, and can make up for the defects of the VBG locking semiconductor laser module, thereby meeting the purposes of adjustable power, high and low temperature working resistance and stable wavelength.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (10)
1. A wavelength stabilized semiconductor laser device, characterized in that: the device comprises a power supply, an LD module and an optical fiber combiner;
the LD modules are arranged in parallel, each LD module is independently connected with one power supply functional module, and the power supply functional modules are connected with a power supply and connected or disconnected with the LD modules through the power supply functional modules;
and the output optical fibers of the LD modules are connected with the input arm of the optical fiber combiner, and output light sources through the combiner.
2. The wavelength stabilized semiconductor laser device according to claim 1, wherein: the LED module is characterized by further comprising a TEC module connected with a power supply, and the plurality of LD modules are arranged on the TEC module.
3. A wavelength stabilized semiconductor laser device according to claim 2, wherein: the plurality of LD modules are uniformly arranged on the TEC module.
4. A wavelength stabilized semiconductor laser device according to claim 2, wherein: the thermoelectric power generation device comprises a box body, wherein a power supply and TEC modules are arranged on two sides in the box body, and an air channel is arranged between the power supply and the TEC modules.
5. The wavelength stabilized semiconductor laser device according to claim 1, wherein: the power and wavelength parameters of the LD modules are the same.
6. The wavelength stabilized semiconductor laser device according to claim 1, wherein: and the power supply functional module controls the current of the LD module to be constant.
7. The wavelength stabilized semiconductor laser device according to claim 1, wherein: the power supply is a direct current power supply with a communication function.
8. The wavelength stabilized semiconductor laser device according to claim 1, wherein: the power supply is connected with the control system through the communication interface.
9. The wavelength stabilized semiconductor laser device according to claim 1, wherein: the number of the LD modules is 10-20.
10. The wavelength stabilized semiconductor laser device according to claim 1, wherein: by controlling the number of the light-emitting LD modules, the power is adjustable and the wavelength is stable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210299021.2A CN114665379A (en) | 2022-03-25 | 2022-03-25 | Semiconductor laser device with stable wavelength |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210299021.2A CN114665379A (en) | 2022-03-25 | 2022-03-25 | Semiconductor laser device with stable wavelength |
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| CN202210299021.2A Pending CN114665379A (en) | 2022-03-25 | 2022-03-25 | Semiconductor laser device with stable wavelength |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115189774A (en) * | 2022-06-29 | 2022-10-14 | 武汉光迅科技股份有限公司 | Marshallable optical module and using method |
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Application publication date: 20220624 |