CN103022272A - Device preparing non-crystalline silicon/non-crystalline germanium-silicon laminated solar cell thin films - Google Patents
Device preparing non-crystalline silicon/non-crystalline germanium-silicon laminated solar cell thin films Download PDFInfo
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- CN103022272A CN103022272A CN2012105617808A CN201210561780A CN103022272A CN 103022272 A CN103022272 A CN 103022272A CN 2012105617808 A CN2012105617808 A CN 2012105617808A CN 201210561780 A CN201210561780 A CN 201210561780A CN 103022272 A CN103022272 A CN 103022272A
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Abstract
The invention discloses a device preparing non-crystalline silicon/non-crystalline germanium-silicon laminated solar cell thin films. The device comprises a vacuum chamber and a plasma generator arranged in the vacuum chamber, a first electrode plate connected with a radio-frequency power supply and a second electrode plate connected with the ground are arranged in the plasma generator, the second electrode plate connected with the ground is designed into a V-shaped structure, an opening of the V-shape faces the first electrode plate, the V-structure second electrode plate is divided into an upper plate and a lower plate, the second electrode plate is provided with air holes, and hole diameters of the air holes are gradually enlarged from top to bottom. The electrode plates used for generating plasmas are designed into the non-parallel structure, accordingly uneven distribution of electric field intensity in the plasma area along gas flow direction is achieved, gas at different positions is performed with differentiated compensation during manufacturing process, the aim of gradual decomposition and even deposition of germane from top to bottom is achieved, prepared film layers are even in component, and photoelectric conversion efficiency of cells is remarkably improved.
Description
Technical field
The invention belongs to the semiconductive thin film preparing technical field, relate to the device of a kind of amorphous silicon for preparing Large-Area-Uniform/amorphous germanium silicon lamination solar cell film.
Background technology
In the silicon-based film solar cells technology, in order to reduce photo attenuation to the impact of battery performance, usually amorphous silicon battery can be made amorphous silicon/amorphous silicon double junction structure.Wherein the amorphous silicon of the first knot is used for absorbing the energy of light intermediate waves wave band, and the second junction amorphous silicon is used for absorbing the energy of long wave band.If replace the amorphous silicon of the second knot with the microcrystal silicon material, it is exactly said microcrystalline silicon film battery, thereby then can solve better the photo attenuation effect owing to the high stability of microcrystalline silicon film, simultaneously because the material behavior of microcrystalline silicon film, can increase the long-wave band Optical Absorption, and then so that the photoelectric conversion efficiency of battery promoted, but expensive equipment price so that the large-scale production of microcrystalline silicon film battery be restricted.
The another kind of method that improves silicon-base thin-film battery efficient is to participate in an amount of Ge element when deposition intrinsic is undoped amorphous silicon intrinsic layer, be made into amorphous silicon/amorphous silicon germanium/laminated cell, amorphous germanium silicon (a-SiGe) not only has the high absorption coefficient of amorphous silicon, have again simultaneously the effect to long-wave band high absorption similar with microcrystal silicon, so amorphous germanium silicon also is a kind of ideal thin-film solar cells material.Mixing suitable Ge element in amorphous silicon can improve the long-wave band Optical Absorption.By changing the content of germanium, can be so that the sub-battery of amorphous silicon germanium reaches optimum to Optical Absorption efficient because every sub-battery of this laminated construction all can absorb the light wave of corresponding wave band, can be with the light absorption of each wave band more abundant.Because it has good absorption coefficient each absorbed layer can make very thinly, shorter more being conducive to of the transmission range of charge carrier collects like this, thereby can access higher fill factor, curve factor, the while has also alleviated the photo attenuation effect.
For amorphous germanium silicon, a difficult problem is how to make the amorphous germanium silicon film of Large-Area-Uniform.Plasma enhanced chemical vapor deposition equipment for parallel model, plasma zone between the parallel electrode plate, its electric field strength from top to bottom is more or less the same, when this can cause Germane gas to flow along the battery lead plate direction from top to bottom, it just easily decomposes on top, and it is not enough in bottom Germane gas amount, thereby the skewness of prepared amorphous germanium silicon thin film, the top Ge content is large, and the bottom Ge content is little, the unstrpped gas germane of germanium in argon-arc plasma field than the easier decomposition of silane, like this when the large-area manufacturing film, will occur because the content of germanium edge is parallel to battery lead plate direction problem pockety from top to bottom, thereby seriously influenced the conversion efficiency of device, especially must increase the content of germanium for better absorption long-wave band light on the second knot battery, certainly will increase the weight of like this situation pockety of germanium, the skewness on this space is especially obvious in the parallel model plasma enhanced chemical vapor deposition equipment of single chamber multi-disc.Because germane is easier to be decomposed, the Ge content difference of the device upper and lower of making under this parallel model like this is very large, causes the device conversion efficiency to drop to unacceptable stage.
Based on above problem, the present invention is by changing the plasma enhanced chemical vapor deposition electrode structure, glow discharge apparatus under a kind of non-parallel pattern is proposed, carry out simultaneously replenishing of Germane gas in the specific region, the amorphous silicon of realization preparation Large-Area-Uniform component/amorphous germanium silicon overlapping thin film solar battery.
Summary of the invention
For solving in the existing parallel pole plate mode Ge content along gas flow fortune direction problem pockety, the present invention proposes the device of a kind of suitable preparation Large-Area-Uniform amorphous silicon/amorphous germanium silicon lamination solar cell film, can obtain again comparatively uniformly amorphous germanium silicon thin film when being implemented in the uniform amorphous silicon membrane of preparation, thereby prepare high performance amorphous silicon/amorphous germanium silicon overlapping thin film solar battery.
For achieving the above object, the present invention adopts following technological means, a kind of device for preparing amorphous silicon/amorphous germanium silicon lamination solar cell film, described amorphous silicon/amorphous germanium silicon lamination solar cell film comprises two PIN knots, the I layer of first PIN knot is amorphous silicon membrane, the I layer of second PIN knot is the amorphous germanium silicon thin film, P layer and the N layer of two PIN knots are amorphous silicon membrane, described device comprises vacuum chamber, be provided with plasma generator in the vacuum chamber, air inlet is offered at the top of vacuum chamber, the bottom of vacuum chamber connects vacuum pump, the first battery lead plate of being connected with radio-frequency power supply and the second battery lead plate of ground connection are housed in the plasma generator, the upper and lower side of battery lead plate is fixed by draw-in groove, the upper end of battery lead plate is provided with air admission hole, described air admission hole is distributed in the outside and the inboard of the second battery lead plate, radio-frequency power supply is injected by the middle part of the first battery lead plate, the glass substrate that is used for deposit film places the zone that forms plasma between the first battery lead plate and the second battery lead plate, process gas is injected by described air inlet, flow through the zone of described formation plasma from top to bottom, vacuum pump by the vacuum chamber bottom is extracted out, it is characterized in that, the second battery lead plate of described ground connection is designed to " V " word structure, " V " word opening is towards the first battery lead plate, " V " word structure the second battery lead plate is divided into upper plate and lower plate, offer the pore that the aperture increases from top to bottom gradually on the second battery lead plate, replenish in order to the differentiation to gas in technical process.
The air vent aperture of offering on described the second battery lead plate is 0.1～0.4mm.
The air admission hole in described the second battery lead plate outside is provided with valve.
The shortest upper and lower end points of described the second battery lead plate distance the first battery lead plate equates with distance between the first battery lead plate on a vertical line,
Beeline between described the second battery lead plate and the first battery lead plate is 13～20mm,
Upper plate and the angle between the first battery lead plate of described " V " word structure the second battery lead plate are 0.4～0.8 °, angle between the lower plate of the second battery lead plate and the first battery lead plate is 0.3～0.6 °, and the angle between the upper plate of the second battery lead plate and the first battery lead plate is all the time greater than the lower plate of the second battery lead plate and the angle between the first battery lead plate.
Beneficial effect of the present invention:
Innovation of the present invention is to connect the battery lead plate of radio-frequency power supply and the battery lead plate of ground connection takes to be different from traditional non-parallel design, and the battery lead plate of ground connection adopts " V " word structural design, the aperture of pore up and down angles different and two battery lead plates are different on the battery lead plate of ground connection, by being designed to for generation of the battery lead plate of plasma nonparallel structure, realize that electric field strength is along the uneven distribution on the gas flow direction in the plasma zone, and by in the technical process gas at diverse location place being carried out the compensation of differentiation, reach germane is from top to bottom progressively decomposed, the purpose of uniform deposition, be implemented in the equally distributed film of preparation in the non-homogeneous argon-arc plasma field, amorphous germanium silicon (a-SiGe) film particularly, and then with the amorphous silicon of this film preparation/amorphous germanium silicon (a-Si/a-SiGe) overlapping thin film solar battery, photoelectric conversion efficiency significantly promotes.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention;
Fig. 2 is the plane graph of the second battery lead plate.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
As shown in Figure 1, a kind of device for preparing amorphous silicon/amorphous germanium silicon lamination solar cell film provided by the present invention, described amorphous silicon/amorphous germanium silicon lamination solar cell film comprises two PIN knots, the I layer of first PIN knot is amorphous silicon membrane, the I layer of second PIN knot is the amorphous germanium silicon thin film, P layer and the N layer of two PIN knots are amorphous silicon membrane, described device comprises vacuum chamber 1, be provided with plasma generator 2 in the vacuum chamber 1, air inlet 6 is offered at the top of vacuum chamber 1, the bottom of vacuum chamber 1 connects vacuum pump 13, flat the first battery lead plate 3 of being connected with radio-frequency power supply 10 and " V " word structure second battery lead plate 4 of ground connection are housed in the plasma generator 2, " V " word opening of the second battery lead plate 4 is towards the first battery lead plate 3, " V " word structure the second battery lead plate 4 is divided into upper plate and lower plate, and the spacing between the first battery lead plate 3 and the second battery lead plate 4, is reduced by the middle part as maximum up and down successively take the middle part, and asymmetric up and down, the top spacing is slightly larger than the bottom spacing; In conjunction with shown in Figure 2, offer the aperture is increased to 0.4mm from top to bottom gradually by 0.1mm circular pore 14 on the second battery lead plate 4, replenish in order to the differentiation to gas in technical process; The upper and lower side of the first battery lead plate 3, the second battery lead plate 4 is fixed by draw-in groove 11,12 respectively, and the draw-in groove 11 of fixing the first battery lead plate 3 adopts polytetrafluoroethylmaterial materials, so that itself and the draw-in groove 12 of fixing the second battery lead plate 4 and plasma generator 2 insulation; The upper end of battery lead plate is provided with and is distributed in the second battery lead plate 4 outsides and inboard air admission hole 9,7, wherein air admission hole 9 places in the second battery lead plate 4 outsides are provided with valve 8, just when preparation amorphous germanium silicon thin film, open valve 8, valve 8 is closed when preparing other film, radio-frequency power supply 10 is injected by the middle part of the first battery lead plate 3, the glass substrate 5 that is used for deposit film places the zone that forms plasma between the first battery lead plate 3 and the second battery lead plate 4, process gas is injected by air inlet 6, flow through the zone of described formation plasma from top to bottom, vacuum pump 13 by vacuum chamber 1 bottom is extracted out, the shortest upper of the second battery lead plate 4 distance the first battery lead plate 3, lower extreme point is on a vertical line, and equate with the distance between the first battery lead plate, be 13～20mm, angle between the upper plate of the second battery lead plate 4 and the first battery lead plate 3 is 0.4～0.8 °, angle in this example is 0.65 °, angle between the lower plate of the second battery lead plate 4 and the first battery lead plate 3 is 0.3～0.6 °, angle in this example is 0.45 °, requires the upper plate of the second battery lead plate 4 and the angle between the first battery lead plate 3 all the time greater than the lower plate of the second battery lead plate 4 and the angle between the first battery lead plate 3.
The technique mist is entered by air inlet 6, when opening by air admission hole 7 and air admission hole 9(valve 8) flow downward, regional by the plasma that the pore on the second battery lead plate 4 enters between the first battery lead plate 3 and the second battery lead plate 4 again by the gas that air admission hole 9 enters, technical process is carried out gas compensation, mist is extracted out from the vacuum chamber bottom by vacuum pump 13, and is stable with the pressure that keeps technical process.
Get each fritter of top, middle part and bottom of the battery device of preparation on the glass substrate 5, area is 2 * 2cm
2, test respectively its photoelectric properties, as shown in table 1.Photoelectric properties for the amorphous silicon of amorphous silicon of the same area/amorphous silicon laminated battery and the present invention preparation/amorphous germanium silicon laminated cell are more as shown in table 2.By as seen from Table 1, the laminated cell of the present invention's preparation has comparatively uniformly component, and as shown in table 2 with the photoelectric properties of its amorphous silicon as opto-electronic conversion/amorphous germanium silicon (a-Si/a-SiGe) laminated cell, its photovoltaic performance index is compared simple amorphous silicon (a-Si/a-Si) laminated cell significant lifting.
Table 1 adopts the photovoltaic performance at the battery device diverse location place of apparatus of the present invention preparation
| ? | Thickness (nm) | V OC（V） | J SC（mA/cm 2） | FF | Efficiency（%） |
| Top | 716 | 1.42 | 10.1 | 0.701 | 10.05 |
| The middle part | 721 | 1.43 | 9.99 | 0.712 | 10.17 |
| The bottom | 719 | 1.41 | 9.94 | 0.696 | 9.75 |
The amorphous silicon of table 2 apparatus of the present invention preparations/amorphous germanium silicon and amorphous silicon/amorphous silicon laminated cell photovoltaic Performance Ratio
| ? | V OC（V） | I SC（A） | FF | P MAX（W） |
| Amorphous silicon/amorphous germanium silicon | 118.1 | 1.66 | 0.701 | 137.43 |
| Amorphous silicon/amorphous silicon | 143.6 | 1.16 | 0.689 | 114.77 |
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, any simple modification of above embodiment being done according to technical spirit of the present invention, be equal to replacements, equivalence changes and modify, all still belong in the scope that technical solution of the present invention protects.
Claims (6)
1. device for preparing amorphous silicon/amorphous germanium silicon lamination solar cell film, described amorphous silicon/amorphous germanium silicon lamination solar cell film comprises two PIN knots, the I layer of first PIN knot is amorphous silicon membrane, the I layer of second PIN knot is the amorphous germanium silicon thin film, P layer and the N layer of two PIN knots are amorphous silicon membrane, described device comprises vacuum chamber, be provided with plasma generator in the vacuum chamber, air inlet is offered at the top of vacuum chamber, the bottom of vacuum chamber connects vacuum pump, the first battery lead plate of being connected with radio-frequency power supply and the second battery lead plate of ground connection are housed in the plasma generator, the upper and lower side of battery lead plate is fixed by draw-in groove, the upper end of battery lead plate is provided with air admission hole, described air admission hole is distributed in the outside and the inboard of the second battery lead plate, radio-frequency power supply is injected by the middle part of the first battery lead plate, the glass substrate that is used for deposit film places the zone that forms plasma between the first battery lead plate and the second battery lead plate, process gas is injected by described air inlet, flow through the zone of described formation plasma from top to bottom, vacuum pump by the vacuum chamber bottom is extracted out, it is characterized in that, the second battery lead plate of described ground connection is designed to " V " word structure, " V " word opening is towards the first battery lead plate, " V " word structure the second battery lead plate is divided into upper plate and lower plate, offers the pore that the aperture increases from top to bottom gradually on the second battery lead plate.
2. a kind of device for preparing amorphous silicon/amorphous germanium silicon lamination solar cell film according to claim 1 is characterized in that the air vent aperture of offering on described the second battery lead plate is 0.1～0.4mm.
3. a kind of device for preparing amorphous silicon/amorphous germanium silicon lamination solar cell film according to claim 1 is characterized in that, the air admission hole in described the second battery lead plate outside is provided with controlled valve.
4. a kind of device for preparing amorphous silicon/amorphous germanium silicon lamination solar cell film according to claim 1, it is characterized in that, the shortest upper and lower end points of described the second battery lead plate distance the first battery lead plate equates with distance between the first battery lead plate on a vertical line.
5. according to claim 1 or 4 described a kind of devices that prepare amorphous silicon/amorphous germanium silicon lamination solar cell film, it is characterized in that the beeline between described the second battery lead plate and the first battery lead plate is 13～20mm.
6. a kind of device for preparing amorphous silicon/amorphous germanium silicon lamination solar cell film according to claim 1, it is characterized in that, upper plate and the angle between the first battery lead plate of described " V " word structure the second battery lead plate are 0.4～0.8 °, angle between the lower plate of the second battery lead plate and the first battery lead plate is 0.3～0.6 °, and the angle between the upper plate of the second battery lead plate and the first battery lead plate is all the time greater than the lower plate of the second battery lead plate and the angle between the first battery lead plate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107564788A (en) * | 2016-07-01 | 2018-01-09 | 朗姆研究公司 | Room plugger external member for dielectric etch chamber |
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| US20110068085A1 (en) * | 2005-10-20 | 2011-03-24 | Paul Lukas Brillhart | Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control |
| CN101960562B (en) * | 2008-01-01 | 2012-07-25 | 东莞宏威薄膜真空技术有限公司 | A system for processing the substrate in the chamber |
| CN102634774A (en) * | 2012-05-05 | 2012-08-15 | 云南师范大学 | Method for preparing amorphous silicon germanium thin-film batteries with box type PECVD (plasma enhanced chemical vapor deposition) equipment |
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Patent Citations (4)
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| US20110068085A1 (en) * | 2005-10-20 | 2011-03-24 | Paul Lukas Brillhart | Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control |
| CN101245448A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Method for manufacturing thin membrane silicon electrooptical device with single-chamber plasma case |
| CN101960562B (en) * | 2008-01-01 | 2012-07-25 | 东莞宏威薄膜真空技术有限公司 | A system for processing the substrate in the chamber |
| CN102634774A (en) * | 2012-05-05 | 2012-08-15 | 云南师范大学 | Method for preparing amorphous silicon germanium thin-film batteries with box type PECVD (plasma enhanced chemical vapor deposition) equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107564788A (en) * | 2016-07-01 | 2018-01-09 | 朗姆研究公司 | Room plugger external member for dielectric etch chamber |
| CN107564788B (en) * | 2016-07-01 | 2020-03-31 | 朗姆研究公司 | Chamber filler kit for dielectric etch chamber |
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Application publication date: 20130403 |