CN103022162A - Method for manufacturing silicon-film solar cell with high light capturing efficiency by utilizing zinc oxide-doped boron - Google Patents
Method for manufacturing silicon-film solar cell with high light capturing efficiency by utilizing zinc oxide-doped boron Download PDFInfo
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- CN103022162A CN103022162A CN2011102825293A CN201110282529A CN103022162A CN 103022162 A CN103022162 A CN 103022162A CN 2011102825293 A CN2011102825293 A CN 2011102825293A CN 201110282529 A CN201110282529 A CN 201110282529A CN 103022162 A CN103022162 A CN 103022162A
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- film solar
- solar batteries
- boron
- zinc oxide
- silicon film
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The invention aims at providing a method for manufacturing a silicon-film solar cell with high light capturing efficiency by utilizing zinc oxide-doped boron. According to the technical method, compounds of zinc, oxide and boron are utilized for manufacturing a silicon-film solar cell with high light capturing efficiency by changing the ZnO to ZnO:B, so that incident light can be effectively captured to avoid efficiency loss due to reflection or dispersion of excessive incident light when the incident light can pass through ZnO:B; the efficiency can be improved by least 80%, and the silicon-film solar cell with high light capturing efficiency can be generated.
Description
Technical field
The present invention mixes the silicon film solar batteries that boron is made high light capturing efficiency about a kind of zinc oxide that utilizes, and its purpose is significantly to increase the light capturing efficiency of sunlight incident silicon film solar batteries, and then reaches the silicon film solar batteries of high efficiency.
Background technology
Because energy prices are surging, all parts of the world is sought the green energy resource that substitutes all again, and silicon film solar batteries namely is a kind of efficient green energy resource that sunlight is converted to electric energy.
At present, industry adopts zinc oxide to be used as the window layer of silicon film solar batteries mostly, but this mode still has the low shortcoming of light capturing efficiency to exist, wherein cause solar cell to fail effectively to take full advantage of sunlight, make solar battery efficiency reduce and selling at exorbitant prices the large factor during effectively universalness is applied to live.
Summary of the invention
Main purpose of the present invention is that a kind of zinc oxide that utilizes mixes the silicon film solar batteries that boron is made high light capturing efficiency, this technical method is in the compound that utilizes zinc, oxygen, boron, ZnO becomes ZnO:B by script, to make the silicon film solar batteries of high light capturing efficiency, when its purpose is to make incident light to pass through ZnO:B, can effectively mends and catch incident light, avoid too much incident light reflection or scattering, cause the loss of efficient, promote at least 80%, and produce the high efficiency silicon film solar batteries.
A kind of zinc oxide that utilizes mixes the silicon film solar batteries that boron is made high light capturing efficiency, it is characterized in that, has comprised: a transparent glass substrate; One ZnO:B transparency conducting layer is positioned on this transparent glass substrate; One P layer silicon thin film semiconductor layer is positioned on this ZnO:B transparency conducting layer; One silicon thin film extrinsic semiconductor layer is positioned on this P layer silicon thin film semiconductor layer; One N layer silicon thin film semiconductor layer is positioned on this silicon thin film extrinsic semiconductor layer; Once transparency conducting layer is positioned on this N layer silicon thin film semiconductor layer; One outer transparent glass substrate is positioned on this time transparency conducting layer.
Wherein, the glass substrate of this transparent glass substrate material selection superelevation penetration is to increase the ratio of incident light.
Wherein, this ZnO:B transparency conducting layer, the transparency conducting layer of the compound making of use zinc, oxygen, boron passes through in a large number incident optical energy, and enters silicon thin film intrinsic layer, and then provides sunlight to absorb and promote the efficient of silicon film solar batteries.
Wherein, this P layer silicon thin film semiconductor layer uses PH3 to form the semiconductor layer in charged hole.
Wherein, this silicon thin film extrinsic semiconductor layer uses hydrogen and methane to make extrinsic semiconductor's layer, can absorb more sun incident lights, and significantly promote the efficient of silicon film solar batteries.
Wherein, this N layer silicon thin film semiconductor layer uses TMB and B2H6 to form the semiconductor layer of having electronic.
Make comparisons with conventional oxidation zinc thin film technique, effective benefit that the present invention has is: the zinc oxide that utilizes used in the present invention mixes the silicon film solar batteries that boron is made high light capturing efficiency, has comprised transparent glass substrate, ZnO:B transparency conducting layer, P layer silicon thin film semiconductor layer, silicon thin film extrinsic semiconductor layer, N layer silicon thin film semiconductor layer, lower transparency conducting layer and outer transparent glass substrate.Utilize novel zinc oxide to mix the transparency conducting layer that boron is made, effectively promote solar cell to the capturing efficiency of incident sunlight, and then improve silicon film solar batteries to the absorption efficiency of sunlight, and obtain the high efficiency silicon film solar batteries, and reduce production costs and reach the purpose that accords with the demands of the market.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples, Fig. 1 is that the present invention's the zinc oxide that utilizes mixes the new structure figure that boron is made the silicon film solar batteries of high light capturing efficiency, primary clustering symbol description 1 ... transparent glass substrate 2 ... ZnO:B transparency conducting layer 3 ... P layer silicon thin film semiconductor layer 4 ... silicon thin film extrinsic semiconductor layer 5 ... N layer silicon thin film semiconductor layer 6 ... lower transparency conducting layer 7 ... outer transparent glass substrate.
Embodiment
Hereby the present invention is cooperated accompanying drawing, is described in detail as follows:
With reference to Fig. 1, be that the present invention utilizes zinc oxide to mix the new structure figure that boron is made the silicon film solar batteries of high light capturing efficiency, wherein comprised transparent glass substrate 1, ZnO:B transparency conducting layer 2, P layer silicon thin film semiconductor layer 3, silicon thin film extrinsic semiconductor layer 4, N layer silicon thin film semiconductor layer 5, lower transparency conducting layer 6 and outer transparent glass substrate 7.
In order to obtain the silicon film solar batteries of high light capturing efficiency, its storehouse is sequentially as follows: ZnO:B transparency conducting layer 2, P layer silicon thin film semiconductor layer 3, silicon thin film extrinsic semiconductor layer 4 and N layer silicon thin film semiconductor layer 5.When solar light irradiation during in the PN junction, have part of atoms and obtain energy, and then formation free electron, and the atom that loses electronics will form electric hole, attracts respectively electronics and electric hole by P type and N type semiconductor, and positive electricity and negative electricity are separated, therefore form a potential difference at the two ends of PN junction, then connect circuit at conductive layer, make electronics can by and at the other end of PN junction again in conjunction with electronics and electric hole pair, can utilize wire that electric energy is exported.
Therefore, novel zinc oxide used in the present invention mixes the boron transparency conducting layer, its purpose is improving the capturing efficiency of solar cell to the incident sunlight, and then improve silicon film solar batteries to the absorption efficiency of sunlight, and obtain the high efficiency silicon film solar batteries, and reduce production costs and reach the purpose that accords with the demands of the market.
More than explanation is just illustrative, nonrestrictive for the purpose of the present invention; those of ordinary skills understand; in the situation that does not break away from the spirit and scope that claim limits, can make many corrections, variation or equivalence, but all will fall within protection scope of the present invention.
Claims (6)
1. one kind is utilized zinc oxide to mix the silicon film solar batteries that boron is made high light capturing efficiency, and its purpose is significantly to increase the light capturing efficiency of sunlight incident silicon film solar batteries, and then reaches the silicon film solar batteries of high efficiency.
2. a kind of zinc oxide that utilizes according to claim 1 mixes the silicon film solar batteries that boron is made high light capturing efficiency, and the glass substrate of transparent glass substrate material selection superelevation penetration wherein is to increase the ratio of incident light.
3. a kind of zinc oxide that utilizes according to claim 1 mixes the silicon film solar batteries that boron is made high light capturing efficiency, this ZnO:B transparency conducting layer wherein, use the transparency conducting layer of the compound making of zinc, oxygen, boron, incident optical energy is passed through in a large number, and enter silicon thin film intrinsic layer, and then provide sunlight to absorb and promote the efficient of silicon film solar batteries.
4. a kind of zinc oxide that utilizes according to claim 1 mixes the silicon film solar batteries that boron is made high light capturing efficiency, and wherein this P layer silicon thin film semiconductor layer uses PH3 to form the semiconductor layer in charged hole.
5. a kind of zinc oxide that utilizes according to claim 1 mixes the silicon film solar batteries that boron is made high light capturing efficiency, this silicon thin film extrinsic semiconductor layer wherein, use hydrogen and methane to make extrinsic semiconductor's layer, can absorb more sun incident lights, and significantly promote the efficient of silicon film solar batteries.
6. a kind of zinc oxide that utilizes according to claim 1 mixes the silicon film solar batteries that boron is made high light capturing efficiency, and wherein this N layer silicon thin film semiconductor layer uses TMB and B2H6 to form the semiconductor layer of having electronic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102825293A CN103022162A (en) | 2011-09-22 | 2011-09-22 | Method for manufacturing silicon-film solar cell with high light capturing efficiency by utilizing zinc oxide-doped boron |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011102825293A CN103022162A (en) | 2011-09-22 | 2011-09-22 | Method for manufacturing silicon-film solar cell with high light capturing efficiency by utilizing zinc oxide-doped boron |
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| CN103022162A true CN103022162A (en) | 2013-04-03 |
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| CN2011102825293A Pending CN103022162A (en) | 2011-09-22 | 2011-09-22 | Method for manufacturing silicon-film solar cell with high light capturing efficiency by utilizing zinc oxide-doped boron |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090020154A1 (en) * | 2007-01-18 | 2009-01-22 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
| CN101593792A (en) * | 2008-05-26 | 2009-12-02 | 福建钧石能源有限公司 | The manufacture method of thin-film solar cells |
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- 2011-09-22 CN CN2011102825293A patent/CN103022162A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090020154A1 (en) * | 2007-01-18 | 2009-01-22 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
| CN101593792A (en) * | 2008-05-26 | 2009-12-02 | 福建钧石能源有限公司 | The manufacture method of thin-film solar cells |
Non-Patent Citations (1)
| Title |
|---|
| 孟凡英，江民林等: "用MOCVD方法制备ZnO:B透明导电薄膜及其性能优化", 《太阳能学报》, vol. 29, no. 8, 31 August 2008 (2008-08-31) * |
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Application publication date: 20130403 |