CN107210368A - Perovskite solar module - Google Patents
Perovskite solar module Download PDFInfo
- Publication number
- CN107210368A CN107210368A CN201680006331.3A CN201680006331A CN107210368A CN 107210368 A CN107210368 A CN 107210368A CN 201680006331 A CN201680006331 A CN 201680006331A CN 107210368 A CN107210368 A CN 107210368A
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- Prior art keywords
- perovskite solar
- absorbed layer
- battery cell
- solar battery
- connecting portion
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 230000005540 biological transmission Effects 0.000 claims abstract description 29
- 238000009413 insulation Methods 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 5
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 150000002220 fluorenes Chemical class 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 238000007146 photocatalysis Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- -1 HfOx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of perovskite solar module, including：Transparency carrier, it is divided into first module region and second unit region；And first perovskite solar battery cell and the second perovskite solar battery cell, include on its first module region being respectively formed on transparency carrier and second unit region and respectively：Transparency electrode；Absorbed layer, it is formed by perovskite material；Metal electrode, hole is from absorbed layer flows into metal electrode；And hole transmission layer, it is arranged between absorbed layer and metal electrode and hole is sent into metal electrode, wherein, the metal electrode includes connecting portion, it is connected with the transparency electrode being included in the second perovskite solar battery cell, and the first perovskite solar battery cell and the second perovskite solar battery cell are electrically connected, the hole transmission layer includes insulation division, it is arranged between absorbed layer and connecting portion so that absorbed layer is electrically insulated with connecting portion.
Description
Technical field
The present invention relates to a kind of perovskite solar module, being included in particular to one kind has perovskite knot
The perovskite solar module that the material of structure is electrically coupled to each other as the solar battery cell of absorbed layer.
Background technology
Due to the existing fossil energy resource exhaustion of such as oil and coal, therefore researching and developing such as Fukushima nuclear power station thing
Therefore example like that can be with the energy of safety come instead of existing fossil energy, and as the rise of greenhouse effects of the earth problem can
The energy of environmental pollution is reduced, wherein can be by unlimited using therefore carrying out especially many grind using the solar energy of sunshine
Study carefully.
It is to be converted to luminous energy using photovoltaic effect (photovoltaic effect) using the solar cell of sunshine
The device of electric energy, typically with silicon solar cell, typically conventional solar cell is made up of p-type and n-type semiconductor, by
The electronics and hole for possessing front-back electrode in the conventional solar cell and being generated through light irradiation are separated and collected electricity
On extremely.Thus, the unit cells of solar energy battery module are formed.
But, the voltage and current generated in a solar battery cell is small, so that in order to obtain power output,
Packed after multiple solar battery cells are connected in series or in parallel for outdoor use, this form is referred to as too
Positive energy battery module.
In addition, for the solar battery cell comprising the material with perovskite structure as absorbed layer, with showing
Some silicon film solar batteries compare, and the separation of charge and optical charge Accumulation of the solar battery cell are excellent, from
And with excellent photoelectric transformation efficiency.
, can when manufacturing perovskite solar module making the perovskite solar battery cell be electrically connected to each other
The patterning of absorbed layer is carried out by laser scribing process or mechanical scratching technique.Now, it is possible to produce following problem：
Damage or shunting (SHUNT) for being possible to during the scribing process in the absorbed layer that is produced in works etc..Particularly, produce
The electronics generated by the contact between metal electrode and absorbed layer in the absorbed layer will not to transparency electrode movement but
The distributary phenomenon moved to the metal electrode, it is possible to producing the opto-electronic conversion of the perovskite solar module
The problem of efficiency is reduced.
The content of the invention
Technical problem
The present invention is used to solve above-mentioned problem of the prior art, and shunting can be suppressed it is an object of the invention to provide one kind
Generation to improve the perovskite solar module of photoelectric transformation efficiency.
Technical scheme
Perovskite solar module involved by embodiments of the invention includes：Transparency carrier, it is divided into
One unit area and second unit region；And first perovskite solar battery cell and the second perovskite solar cell list
Member, it is respectively formed on the first module region on the transparency carrier and the second unit region and difference
Including：Transparency electrode；Absorbed layer, it is formed by perovskite material；Metal electrode, hole flows into the metal from the absorbed layer
In electrode；And hole transmission layer, it is arranged between the absorbed layer and the metal electrode and is sent to the hole
The metal electrode, wherein, the metal electrode includes connecting portion, and the connecting portion is with being included in the second perovskite sun
Transparency electrode connection that can be in battery unit, and by the first perovskite solar battery cell and second perovskite
Solar battery cell is electrically connected, and the hole transmission layer includes insulation division, and the insulation division is arranged on the absorbed layer and institute
State between connecting portion so that the absorbed layer is electrically insulated with the connecting portion.
In one embodiment of this invention, each of described perovskite solar battery cell may also include resistance respectively
Barrier, the barrier layer is arranged between the transparency electrode and the absorbed layer returns to the absorbed layer to suppress electronics.
In one embodiment of this invention, the absorbed layer included in the first perovskite solar battery cell
Including extension, the extension is electrically connected with the transparency electrode included in the second perovskite solar battery cell,
Each of described perovskite solar battery cell also includes barrier layer respectively, and the barrier layer is arranged on the transparent electricity
Return to the absorbed layer between pole and the absorbed layer to suppress electronics, the extension can be arranged on the insulation division with
Between the barrier layer.
In one embodiment of this invention, the end of the insulation division can be connected with the transparency carrier.
In one embodiment of this invention, each of described perovskite solar battery cell may also include point respectively
Suppressing portion is flowed, the shunting suppressing portion is arranged between the side wall of the absorbed layer and the insulation division and suppresses electronics from described
Absorbed layer is moved to the connecting portion.
In one embodiment of this invention, the absorbed layer may include extension, and the extension is adjacent with being included in
Transparency electrode electrical connection in solar battery cell.
Here, the end of the extension can be connected with the transparency carrier.
Perovskite solar module involved by embodiments of the invention includes：Transparency carrier, it is divided into
One unit area and second unit region；First perovskite solar battery cell and the second perovskite solar battery cell,
Wrap on its first module region being respectively formed on the transparency carrier and the second unit region and respectively
Transparency electrode, the absorbed layer and metal electrode that are formed by perovskite material are included, wherein hole flows into the gold from the absorbed layer
Belong in electrode；Connecting portion, its metal electrode that will be contained in the first perovskite solar battery cell and included in institute
The transparency electrode stated in the second perovskite solar battery cell is connected to each other, so that by the first perovskite solar cell
Unit and the second perovskite solar battery cell electrical connection；And shunting suppress film, its be arranged on the connecting portion with
Moved between the absorbed layer with the electronics for suppressing to be formed in the absorbed layer to the connecting portion.
In one embodiment of this invention, the connecting portion can be with the end of the metal electrode and the transparency electrode
It is physically contacted on top.
In one embodiment of this invention, the connecting portion and the metal electrode can be formed from the same material.
In one embodiment of this invention, the diffusion length that the shunting suppresses film can be shorter than the diffusion of the absorbed layer away from
From.
In one embodiment of this invention, the shunting, which suppresses film, to be formed by dielectric material.
In one embodiment of this invention, each of described perovskite solar battery cell also includes stopping respectively
Layer, the barrier layer is arranged between the transparency electrode and the absorbed layer returns to the absorbed layer to suppress electronics.
It is may be provided at here, the shunting suppresses film between the barrier layer and the connecting portion.
Beneficial effect
Embodiments in accordance with the present invention, the insulation division included in hole transmission layer may be provided at included in metal electrode
Connecting portion and the absorbed layer between so that the electronics for suppressing to be formed in the absorbed layer is moved to the connecting portion.Thus,
It can suppress to make the damage and shunting produced during perovskite solar module.As a result, the perovskite sun can be increased
The efficiency of energy battery module.
In addition, the perovskite solar module involved by embodiments of the invention, which possesses shunting, suppresses film, described point
Stream suppresses film and is arranged between connecting portion and the absorbed layer and suppresses the electronics that is formed in the absorbed layer to the connecting portion
It is mobile.Thereby, it is possible to the damage and shunting produced when suppressing and making perovskite solar module.Thereby, it is possible to increase calcium
The efficiency of titanium ore solar module.
Brief description of the drawings
Fig. 1 is the sectional view for illustrating the perovskite solar module involved by one embodiment of the invention.
Fig. 2 is the sectional view for illustrating the perovskite solar module involved by another embodiment of the present invention.
Fig. 3 is the sectional view for illustrating the perovskite solar module involved by one embodiment of the invention.
Fig. 4 is the sectional view for illustrating the perovskite solar module involved by one embodiment of the invention.
Fig. 5 is the sectional view for illustrating the perovskite solar module involved by another embodiment of the present invention.
Embodiment
Below, embodiments of the invention are described in detail referring to the drawings.The present invention can carry out numerous variations and can have
There are diversified forms, specific embodiment is represented schematically in the drawings and the specific embodiment is carried out specifically in this manual
It is bright.It however, it should be understood that for the present invention is not limited to particular implementation, included in the technological thought and technology model of the present invention
Having altered in enclosing, equivalent and substitute are also contained in the present invention.In the accompanying drawings, For the clarity of this invention, than
Illustrate the size and dimension for finishing structure thing with actually expanding or shrinking.
First, second grade term can be used for explanation various structures key element, but the structural element is not limited by the term
It is fixed.The term can be used for the purpose for distinguishing a structural element and other structures key element.For example, not departing from the present invention
Interest field in the case of, first structure key element can be named as the second structural element, and similarly the second structural element can be named
For first structure key element.
The term used in this application is merely to illustrate specific embodiment, not for limiting the present invention.Singulative
Statement include the statement of plural form, unless otherwise expressly specified within a context.It should be appreciated that in this application, " bag
Include " or the term such as " possessing " be to specify feature, step, function, structural element or the combinations thereof described in specification
In the presence of, be not for exclude in advance further feature or step, function, structural element or combinations thereof exist or it is additional can
Can property.
In addition, if without other definition, then including technology or science term, all terms as used herein have
The implication identical implication being commonly understood by with those of ordinary skill of the present invention.Such as the art defined in the dictionary that generally uses
Language, should be interpreted that with the implication identical implication in the context of correlation technique, and if in this application not by
Explicitly define, then should not be construed as the implication of preferable or excessive form.
According to one embodiment of the invention, perovskite solar module includes：Transparency carrier, it is divided into first
Unit area and second unit region；And first perovskite solar battery cell and the second perovskite solar cell list
Member, it is respectively formed on the first module region and the second unit region on the transparency carrier and wrapped respectively
Include：Transparency electrode；Absorbed layer, it is formed by perovskite material；Metal electrode, hole flows into metal electrode from the absorbed layer
In；And hole transmission layer, it is arranged between the absorbed layer and the metal electrode and is sent to the hole described
Metal electrode, wherein, the metal electrode includes connecting portion, and the connecting portion is with being included in the second perovskite solar-electricity
Transparency electrode connection in pool unit, and by the first perovskite solar battery cell and the second perovskite sun
Energy battery unit electrical connection, the hole transmission layer includes insulation division, and the insulation division is arranged on the absorbed layer and the company
Between socket part and the absorbed layer and the connecting portion is set to be electrically insulated.
Embodiment
Fig. 1 is the sectional view for illustrating the perovskite solar module involved by one embodiment of the invention.
Reference picture 1, solar module 100 involved by one embodiment of the invention include transparency carrier 110 and by
The solar battery cell 120,130 of first solar battery cell 120 and the second solar battery cell 130 composition.
The transparency carrier 110 may include glass substrate or polymeric substrates.Can be via under the transparency carrier 110
Surface and incident external sunshine.
The transparency carrier 110 can be divided into multiple unit areas 111,112.For example, the transparency carrier is divided
For first module region 111 and second unit region 112.It can distinguish shape on the unit area 111, each of 112
Into there is perovskite solar battery cell.
First solar battery cell 120 is formed on the first module region on the transparency carrier 110
On 111.First solar battery cell 120 is performed by using via the incident sunshine of the transparency carrier 110
Opto-electronic conversion and produce electric power.
First solar battery cell 120 includes transparency electrode 121, absorbed layer 123, metal electrode 125 and hole
Transport layer 124.
The transparency electrode 121 is formed on the transparency carrier 110.The transparency electrode 121 for example can be by such as
ITO, FTO, ZnO, ATO, PTO, AZO and IZO etc. transparent conductive oxides are formed.Because of photoelectricity in the absorbed layer 123
Effect and the electronics that generates can flow to the transparency electrode 121.
The absorbed layer 123 is formed on the transparency electrode 121.The absorbed layer 123 absorbs sunshine and profit
With photoelectric effect formation electronics and the carrier pair in hole.
The absorbed layer 123 is formed by the material with perovskite structure.For example, the absorbed layer 123 can be by titanyl
The material of thing and perovskite structure is formed.
The metal electrode 125 is formed on the absorbed layer 123.The metal electrode 125 can by such as Pt, Au,
Ni, Cu, Ag, In, Ru, Pd, Rh, Ir and Os etc. metal are formed.
The hole generated in the absorbed layer 123 can flow to the metal electrode 125.
The metal electrode 125 includes connecting portion 125a, the connecting portion 125a with being included in second perovskite too
Positive transparency electrode connection that can be in battery unit, and by the first perovskite solar battery cell and the second calcium titanium
Ore deposit solar cell is electrically connected.
The connecting portion 140 is connected with the transparency electrode 121 included in the second perovskite solar battery cell 130.
Thus, the first perovskite solar battery cell 120 and the second perovskite solar battery cell 130 are electrically connected
Connect.That is, described connecting portion 140 is by the first perovskite solar battery cell 120 and the second perovskite solar-electricity
Pond 130 is connected in series.Thus, formed and include the first perovskite solar battery cell 120 and second perovskite too
The perovskite solar module 100 of positive energy battery unit 130.
The connecting portion 140 can have the shape that the upper surface relative to the transparency carrier 121 is extends in the vertical direction.
Side of the connecting portion 140 along the hole transmission layer 124 included in the first perovskite solar battery cell 120
Wall is formed.The connecting portion 140 can be with the transparency electrode 121 included in the second perovskite solar battery cell 130
Upper surface connection.
The hole transmission layer 124 is arranged between the absorbed layer 123 and metal electrode 125.The hole transmission layer
The hole (hole) generated in the absorbed layer 123 can be effectively transmitted to the metal electrode 125 by 124.
The hole transmission layer 124 includes the insulation division 124a being arranged between the absorbed layer and the connecting portion.Institute
Stating insulation division 124a can make the absorbed layer be electrically insulated with the connecting portion.
Thus, the electronics generated in the absorbed layer 123 by photoelectric effect is suppressed to included in the metal electrode
Connecting portion 125a in 125 moves and produced the phenomenon of leakage current.That is, described insulation division 124a can suppress distributary phenomenon.
In addition, the insulation division 124a is directly contacted by the sidepiece with the absorbed layer 123a and hole can be made by increasing
(hole) effective area being moved between the hole transmission layer 124 and the absorbed layer 123.Thus, in the absorbed layer
The hole generated in 123 can effectively be moved via the hole transmission layer 124 to metal electrode 125.
The hole transmission layer 124 can be the layer comprising unimolecule or polymeric hole transport material, but be not limited to
This.For example, spiro-MeOTAD (2,2', 7'- tetra--(N, N- bis--to first can be used as the unimolecule hole mobile material
Phenyl-amino)-the fluorenes of 9,9- spiral shells two, 2,2', 7'-tetrakis- (N, N-di-p-methoxyphenyl-amine) -9,
9'spirobifluorene)。
Mixed in addition, can further include the Li systems dopant as dopant, Co systems in the hole transmission layer 124
Both miscellaneous dose or Li systems dopant and Co systems dopant.In addition, can further include tBP etc. in the hole transmission layer 124
Additive.For example, the material for constituting the hole transmission layer 124 can be using the mixed of spiro-MeOTAD, tBP and Li-TFSI
Compound.
In one embodiment of this invention, first solar battery cell 120 can further comprise barrier layer 122.
The barrier layer 122 is arranged between the transparency electrode 121 and the absorbed layer 123.Although the absorbed layer
The electronics generated in 123 should be moved to transparency electrode 121, but electronics possibly can not be moved to the transparency electrode 121 but weight
Newly return to absorbed layer 123.That is, described barrier layer 122 can be by making electronics easily change to the transparency electrode 121 movement
Kind photoelectric transformation efficiency.
The barrier layer 122 can include titanium oxide.The barrier layer 120 can be by with anatase (anatase) structure
Material formed.Thus, the barrier layer 122 can have excellent photocatalysis characteristic.
Second solar battery cell 130 is formed on the second unit region on the transparency carrier 110
On 112.Second solar battery cell 130 can have substantially with the identical of the first solar battery cell 120
Structure.
In one embodiment of this invention, the absorbed layer included in the first perovskite solar battery cell
123 may include that extension 123a, the extension 123a are saturating in the second perovskite solar battery cell with being included in
Prescribed electrode is electrically connected.Thus, the section of the absorbed layer 123 can haveWord shape.
Now, extension 123a may be provided between the insulation division 125a and the barrier layer 122.Thus, it is included in
The extension 123a in the absorbed layer 123 can be by the electronics that makes to be moved in the barrier layer 122 to the extension
Portion 123a moves and suppressed the generation of leakage current.
Fig. 2 is the sectional view for illustrating the perovskite solar module involved by one embodiment of the invention.
Reference picture 2, solar module 100 involved by one embodiment of the invention includes transparency carrier 110 and too
Positive energy battery unit 120,130.The solar module have substantially with included in using above-mentioned Fig. 1 as reference explanation
Transparency carrier 110 and solar battery cell 120,130 identical structures in solar module.But, to difference
It is described in detail.
The end of the insulation division 124a is connected with the transparency carrier.In addition, extension 123a end with it is described
Bright substrate connection.Thus, due to the hole transmission layer 124 and absorbed layer 123 will not with included in the second adjacent solar energy
Transparency electrode 121 in battery unit 130 is directly connected to, therefore, it is possible to effectively further suppress distributary phenomenon.
Fig. 3 is the sectional view for illustrating the perovskite solar module involved by one embodiment of the invention.
Reference picture 3, solar module 100 involved by one embodiment of the invention includes transparency carrier 110 and too
Positive energy battery unit 120,130.The solar module have substantially with included in using above-mentioned Fig. 2 as reference explanation
Transparency carrier 110 and solar battery cell 120,130 identical structures in solar module.
Included in the solar battery cell in the solar module 100 involved by one embodiment of the invention
Each also includes the shunting suppressing portion 150 being arranged between the side wall of the absorbed layer 123 and the insulation division 124a respectively.
In the case where the insulation division 124a has the thickness of relative thin, can reduce the absorbed layer 123 with it is described
Insulation effect between connecting portion 125a.In this case, because the shunting suppressing portion 150 is arranged on the absorbed layer 123
Side wall and the insulation division 124a between, therefore the electronics for suppressing to be formed in the absorbed layer 123 moves directly to the company
Socket part 140.Thus, the shunting suppresses the leakage electricity that film 150 can suppress to be possible to produce in solar module 100
Stream.
Fig. 4 is the sectional view for illustrating the perovskite solar module involved by one embodiment of the invention.
Reference picture 4, the solar module 100 involved by one embodiment of the invention includes transparency carrier 110, first
Solar battery cell 120, the second solar battery cell 130, connecting portion 140 and shunting suppress film 150.
The transparency carrier 110 may include glass substrate or polymeric substrates.Can via the transparency carrier 110 following table
Face and incident external sunshine.
The transparency carrier 110 can be divided into multiple unit areas 111,112.For example, the transparency carrier is divided
For first module region 111 and second unit region 112.It can distinguish shape on the unit area 111, each of 112
Into there is perovskite solar battery cell.
First solar battery cell 120 is formed on the first module region on the transparency carrier 110
On 111.First solar battery cell 120 performs photoelectricity using via the incident sunshine of the transparency carrier 110
Change and produce electric power.
First solar battery cell 120 includes transparency electrode 121, absorbed layer 123 and metal electrode 125.
The transparency electrode 121 is formed on the transparency carrier 110.The transparency electrode 121 for example can be by such as
ITO, FTO, ZnO, ATO, PTO, AZO and IZO etc. transparent conductive oxides are formed.Because of photoelectricity in the absorbed layer 123
Effect and the electronics that generates can flow to the transparency electrode 121.
The absorbed layer 123 is formed on the transparency electrode 121.The absorbed layer 123 absorbs sunshine and led to
Cross photoelectric effect formation electronics and the carrier pair in hole.
The absorbed layer 123 is formed by the material with perovskite structure.For example, the absorbed layer 123 can be by titanyl
The material of thing and perovskite structure is formed.
The metal electrode 125 is formed on the absorbed layer 123.The metal electrode 125 can by such as Pt, Au,
Ni, Cu, Ag, In, Ru, Pd, Rh, Ir and Os metal formed.
The hole generated in the absorbed layer 123 can flow to the metal electrode 125.
Can be to including the first solar battery cell of the transparency electrode 121, absorbed layer 123 and metal electrode 125
120 carry out independent driving.
In one embodiment of this invention, first solar battery cell 120 can further comprise the He of barrier layer 122
Hole transmission layer 124.
The barrier layer 122 is arranged between the transparency electrode 121 and the absorbed layer 123.Although the absorbed layer
The electronics generated in 123 should be moved to transparency electrode 121, but electronics possibly can not be moved to the transparency electrode 121 but weight
Newly return to absorbed layer 123.That is, described barrier layer 122 can be changed by making electronics easily be moved to the transparency electrode 121
Kind photoelectric transformation efficiency.
The barrier layer 122 can include titanium oxide.The barrier layer 120 can be by with anatase (anatase) structure
Material formed.Thus, the barrier layer 122 can have excellent photocatalysis characteristic.
The hole transmission layer 124 is arranged between the absorbed layer 123 and metal electrode 125.The hole transmission layer
124 can effectively transmit the hole (hole) generated in the absorbed layer 123 to the metal electrode 125.
The hole transmission layer 124 can be the layer comprising unimolecule or polymer hole transferable material, but be not limited to
This.For example, spiro-MeOTAD (2,2', 7'- tetra--(N, N- bis--to first can be used as the unimolecule hole transport material
Phenyl-amino)-the fluorenes of 9,9- spiral shells two, 2,2', 7'-tetrakis- (N, N-di-p-methoxyphenyl-amine) -9,
9'spirobifluorene)。
Mixed in addition, can further include the Li systems dopant as dopant, Co systems in the hole transmission layer 124
Both miscellaneous dose or Li systems dopant and Co systems dopant.In addition, can further include tBP etc. in the hole transmission layer 124
Additive.For example, being used as the composition hole transmission layer using spiro-MeOTAD, tBP and Li-TFSI mixture
124 material.
Second solar battery cell 130 is formed on the second unit region on the transparency carrier 110
On 112.Second solar battery cell 130 can have substantially with the identical of the first solar battery cell 120
Structure.
The He of metal electrode 125 that the connecting portion 140 will be contained in the first perovskite solar battery cell 120
Transparency electrode 121 included in the second perovskite solar battery cell 130 is connected to each other.Thus, first calcium
Titanium ore solar battery cell 120 and the second perovskite solar battery cell 130 are electrically connected.That is, described connecting portion
140 are connected in series the first perovskite solar battery cell 120 and the second perovskite solar cell 130.By
This, forms comprising the first perovskite solar battery cell 120 and the second perovskite solar battery cell 130
Perovskite solar module 100.
The connecting portion 140 can be by forming with the identical material of metal electrode 125.That is, described connecting portion 140 can be with
The metal electrode 125 is formed simultaneously.
The connecting portion 140 can have the shape that the upper surface relative to the transparency carrier 121 is extends in the vertical direction.
The connecting portion 140 can along the absorbed layer 123 included in the first perovskite solar battery cell 120 side wall
It is upper with the end of metal electrode 125 and the transparency electrode 121 included in the second perovskite solar battery cell 130
Surface is connected.
The shunting suppresses film 150 and is arranged between the connecting portion 140 and the absorbed layer 123.The shunting suppresses
The electronics that film 150 suppresses to be formed in the absorbed layer 123 is directly mobile to the connecting portion 140.Thus, the shunting suppresses film
150 can suppress the leakage current that is possible to produce in solar module 100.
In addition, being formed by the Patternized technique of such as laser technology or scribing process included in the first perovskite solar energy
Absorbed layer 123 in battery unit and the second perovskite solar battery cell.In the Patternized technique, it is possible to inhaling
Receive and damage is produced on the side of layer 123.Now, the shunting, which suppresses film 150, can relax the generation in the Patternized technique
In the damage exposed on side of the absorbed layer 123.
In one embodiment of this invention, by the sidepiece thermalization of absorbed layer 123 that makes to expose during Patternized technique and shape
Suppress film 150 into the shunting.That is, it can form the shunting by applying heat to the absorbed layer 123 and suppress film 150.By
This, the shunting, which suppresses film 150, can be arranged to extend vertically along the sidepiece of the absorbed layer 123.
Unlike this, can also be by way of depositing operation be with the diffusion length shorter than the absorbed layer 123
Form the shunting and suppress film 150.
In addition, the section of the absorbed layer 123 can haveWord shape.Thus, the absorbed layer 123 can cover institute
State the sidepiece on barrier layer 122 and upper with the transparency electrode 121 included in the second perovskite solar battery cell 130
Surface is contacted.In this case, because side wall shunting formed by thermalization of exposing of the absorbed layer 123 suppresses film 150
It is formed to cover the sidepiece of the absorbed layer 123 on the whole, and makes the barrier layer 122 and the electricity of the connecting portion 140 absolutely
Edge.Therefore, the shunting, which suppresses film 150, can suppress electronics and moved from the barrier layer 122 to the connecting portion 140.
Fig. 5 is the sectional view for illustrating the perovskite solar module involved by one embodiment of the invention.
Reference picture 5, the solar module 100 involved by one embodiment of the invention includes transparency carrier 110, first
Solar battery cell 120, the second solar battery cell 130, connecting portion 140 and shunting suppress film 150.The solar-electricity
Pond module have substantially with the transparency carrier 110 in using above-mentioned Fig. 1 as the solar module of reference explanation, the
One solar battery cell 120, the second solar battery cell 130 and the identical structure of connecting portion 140.
The shunting suppresses film 150 and is arranged between the connecting portion 140 and the absorbed layer 123.The shunting suppresses
The electronics that film 150 suppresses to be formed in the absorbed layer 123 is directly mobile to the connecting portion 140.Thus, the shunting suppresses film
150 can suppress the leakage current that is possible to produce in solar module 100.
In addition, being formed by the Patternized technique of such as laser technology or scribing process included in the first perovskite solar energy
Absorbed layer 123 in battery unit and the second perovskite solar battery cell.In the Patternized technique, it is possible to inhaling
That receives layer 123 exposes generation damage on side.Now, the shunting, which suppresses film 150, can relax in the Patternized technique
Produce the damage on the side of the absorbed layer 123.
Now, institute can be formed by deposition of dielectric materials on the side of the absorbed layer 123 exposed in Patternized technique
State shunting and suppress film 150.That is, it can form described by after the patterning process using dielectric material formation dielectric substance
Shunting suppresses film 150.
The shunting suppresses film 150 can be by such as TiO2、SiNx、Al2O3, SiOx, intrinsic amorphous silicon, HfOx, ZrOx or ZnS
Material formed.
In addition, it is described shunting suppress film 150 can be arranged between the connecting portion 140 and hole transmission layer 124 and
Between the connecting portion 140 and barrier layer 122.Thus, it is described shunting suppress film can suppress electronics from the barrier layer 122 to
Leakage current formed by the movement of connecting portion 140.
Industrial usability
Embodiments in accordance with the present invention, the insulation division included in hole transmission layer is arranged on included in metal electrode
Between connecting portion and the absorbed layer, moved so as to the electronics that suppresses to be formed in the absorbed layer to the connecting portion.By
This, can suppress to make the damage and shunting produced during perovskite solar module.In addition, setting shunting to suppress film, institute
State shunting and suppress film and be arranged between connecting portion and the absorbed layer to suppress the electronics that is formed in the absorbed layer to the company
Socket part is moved.Thereby, it is possible to the damage and shunting produced when suppressing and making perovskite solar module.As a result, can
Strengthen the efficiency of perovskite solar module.
The present invention discussed above is not limited to foregoing embodiment and appended accompanying drawing, technology neck belonging to the present invention
The technical staff in domain should be able to be clear and definite, do not depart from the present invention technological thought in the range of can carry out it is various displacement, deformation and
Change.
Claims (14)
1. a kind of perovskite solar module, it is characterised in that including：
Transparency carrier, it is divided into first module region and second unit region；And
First perovskite solar battery cell and the second perovskite solar battery cell, it is respectively formed at described transparent
Include on the first module region and the second unit region on substrate and respectively：Transparency electrode；Absorbed layer, its by
Perovskite material is formed；Metal electrode, hole is from the absorbed layer flows into the metal electrode；And hole transmission layer, its
It is arranged between the absorbed layer and the metal electrode and the hole is sent to the metal electrode,
Wherein, the metal electrode includes connecting portion, and the connecting portion is with being included in the second perovskite solar cell list
Transparency electrode connection in member, and by the first perovskite solar battery cell and the second perovskite solar-electricity
Pool unit is electrically connected,
The hole transmission layer includes insulation division, and the insulation division is arranged between the absorbed layer and the connecting portion so that institute
Absorbed layer is stated to be electrically insulated with the connecting portion.
2. perovskite solar module according to claim 1, it is characterised in that
Each of described perovskite solar battery cell also includes barrier layer respectively, and the barrier layer is arranged on described
Between prescribed electrode and the absorbed layer absorbed layer is returned to suppress electronics.
3. perovskite solar module according to claim 1, it is characterised in that
The absorbed layer included in the first perovskite solar battery cell includes extension, the extension and bag
The transparency electrode electrical connection in the second perovskite solar battery cell is contained in,
Each of described perovskite solar battery cell also includes barrier layer respectively, and the barrier layer is arranged on described
The absorbed layer is returned to suppress electronics between prescribed electrode and the absorbed layer,
The extension is arranged between the insulation division and the barrier layer.
4. perovskite solar module according to claim 1, it is characterised in that
The end of the insulation division is connected with the transparency carrier.
5. perovskite solar module according to claim 1, it is characterised in that
Each of described perovskite solar battery cell also includes shunting suppressing portion respectively, and the shunting suppressing portion is set
Between the side wall and the insulation division of the absorbed layer and suppress electronics and moved from the absorbed layer to the connecting portion.
6. perovskite solar module according to claim 1, it is characterised in that
The absorbed layer includes extension, the extension and the transparency electrode electricity included in adjacent solar battery cell
Connection.
7. perovskite solar module according to claim 1, it is characterised in that
The end of the extension is connected with the transparency carrier.
8. a kind of perovskite solar module, it is characterised in that including：
Transparency carrier, it is divided into first module region and second unit region；
First perovskite solar battery cell and the second perovskite solar battery cell, it is respectively formed at described transparent
Include on the first module region and the second unit region on substrate and respectively transparency electrode, by perovskite material
The absorbed layer and metal electrode of formation, wherein hole are from the absorbed layer flows into the metal electrode；
Connecting portion, its metal electrode that will be contained in the first perovskite solar battery cell and included in described second
Transparency electrode in perovskite solar battery cell is connected to each other, thus by the first perovskite solar battery cell and
The second perovskite solar battery cell electrical connection；And
Shunting suppresses film, and it is arranged between the connecting portion and the absorbed layer to suppress the electronics formed in the absorbed layer
Moved to the connecting portion.
9. perovskite solar module according to claim 8, it is characterised in that
The connecting portion is physically contacted with the end of the metal electrode and the top of the transparency electrode.
10. perovskite solar module according to claim 8, it is characterised in that
The connecting portion and the metal electrode are formed from the same material.
11. perovskite solar module according to claim 8, it is characterised in that
The diffusion length that the shunting suppresses film is shorter than the diffusion length of the absorbed layer.
12. perovskite solar module according to claim 8, it is characterised in that
The shunting suppresses film and formed by dielectric material.
13. perovskite solar module according to claim 8, it is characterised in that
Each of described perovskite solar battery cell also includes barrier layer respectively, and the barrier layer is arranged on described
Between prescribed electrode and the absorbed layer absorbed layer is returned to suppress electronics.
14. perovskite solar module according to claim 13, it is characterised in that
The shunting suppresses film and is arranged between the barrier layer and the connecting portion.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
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| KR10-2015-0068615 | 2015-05-18 | ||
| KR1020150068615A KR101852237B1 (en) | 2015-05-18 | 2015-05-18 | Perovskite photovoltaic cell module |
| KR10-2015-0068619 | 2015-05-18 | ||
| KR1020150068619A KR101666748B1 (en) | 2015-05-18 | 2015-05-18 | Perovskite photovoltaic cell module |
| PCT/KR2016/003378 WO2016186317A1 (en) | 2015-05-18 | 2016-04-01 | Perovskite solar cell module |
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| CN107210368A true CN107210368A (en) | 2017-09-26 |
| CN107210368B CN107210368B (en) | 2019-11-08 |
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| CN111653673A (en) * | 2020-07-22 | 2020-09-11 | 天合光能股份有限公司 | Packaging structure of perovskite solar cell and preparation method thereof |
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| WO2016186317A1 (en) | 2016-11-24 |
| CN107210368B (en) | 2019-11-08 |
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