CN103011052A - Sacrificial layer of MEMS (Micro-Electro-Mechanical-System) device, MEMS device and manufacturing method thereof - Google Patents
Sacrificial layer of MEMS (Micro-Electro-Mechanical-System) device, MEMS device and manufacturing method thereof Download PDFInfo
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Abstract
Different from the scheme that an organic material layer is separately used as a sacrificial layer of an MEMS (Micro-Electro-Mechanical-System) device, the invention adopts the following scheme that after the organic material layer is patterned, a covering layer with the decomposition temperature higher than that of the organic material layer covers the surface of the patterned organic material layer, so that a subsequent deposited structural material layer is isolated from the organic material layer to play a role of preventing a machine cavity from being polluted due to the decomposition and escape of the organic material layer in the high-temperature deposition process. In addition, the covering layer provides a larger material selection range for the organic material layer. Based on the sacrificial layer, the invention also provides the MEMS device comprising the sacrificial layer and a manufacturing method of the MEMS device.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to sacrifice layer, MEMS device of a kind of MEMS device and preparation method thereof.
Background technology
In recent years, along with MEMS (Micro-Electro-Mechanical-System, MEMS) development of technology, various microelectromechanicdevices devices, comprise: microsensor, micro-actuator etc. has been realized microminaturization, above-mentioned miniaturization is conducive to improve the device integrated level, thereby becomes the main direction of future development.
Early stage MEMS technique is take bulk silicon technological as main, and namely by silicon chip being corroded structures such as forming overarm, more information about the bulk silicon MEMS device please refer to the United States Patent (USP) of publication number US6170332B1.
Yet the technique of above-mentioned body silicon and existing CMOS technique are incompatible.For the problems referred to above, surface silicon technique has appearred in the industry, namely take Semiconductor substrate as substrate, prepare three-dimensional micro mechanical structure by multilayer film deposit and graphical technique.Particularly, device portions is processed by the thin layer of deposit, and sacrificial layer technology is adopted in the space between structure and the substrate, and this sacrifice layer plays a supportive role in structure-forming process, and after structure formed, this sacrifice layer was released.
Sacrifice layer process is to be developed by California, USA university Berkeley branch school in the eighties in 20th century the earliest, be mainly used in the processing of two-dimensional surface figure, it is take polysilicon as structure sheaf, silica is sacrifice layer, adopting silicon dioxide layer is to remove to use wet etching as the disadvantage of sacrifice layer, and wet etching can bring the effect of sticking of least wishing appearance in the MEMS, upper bottom crown sticks and causes inefficacy after causing sacrifice layer to be removed, development along with sacrifice layer process, the technical staff begins to adopt the organic materials such as photoresist or class photoresist as sacrifice layer, this sacrifice layer can adopt the processing procedures such as dry etching such as ashing (Ashing) to remove, thereby avoided sticking effect, improved the yield of MEMS system.
The inventor finds under study for action, the decomposition temperature of this organic material is because the deposition temperature of general low follow-up thereon structural film layer of carrying out, thereby, in subsequent deposition operation process, decomposing phenomenon can appear in this organic material, above-mentioned decomposition molecule out is attached to chamber inner wall easily, causes chamber contamination, and this is unfavorable for the carrying out of depositing technics.
For the problems referred to above, the present invention proposes a kind of new sacrifice layer and solves.
Summary of the invention
The problem that the present invention solves is to propose a kind of sacrifice layer, occurs easily decomposing with the sacrifice layer that solves existing MEMS device, and then causes polluting the problem of chamber.
For addressing the above problem, the invention provides a kind of sacrifice layer of MEMS device, comprising:
Patterned organic material layer and be coated on cover layer on the described patterned organic material layer, described tectal decomposition temperature is higher than the decomposition temperature of described organic material layer.
Alternatively, the material of described organic material layer is photoresist.
Alternatively, the material of described organic material layer is polyimides.
Alternatively, described tectal material is SOG or low temperature oxide.
Based on above-mentioned sacrifice layer, the present invention also provides a kind of MEMS device and preparation method thereof, and wherein, this MEMS device also comprises except comprising above-mentioned sacrifice layer: the graphic structure that forms on the described sacrifice layer.
Alternatively, described graphic structure is sensitive thin film.
Alternatively, the material of described sensitive thin film is at least a in SiGe, monocrystalline silicon, polysilicon, the metal.
Correspondingly, the preparation method of MEMS device comprises:
Form organic material layer in described Semiconductor substrate, described organic material layer is carried out selective removal form graphical organic material layer;
Form cover layer at described patterned organic material layer, described tectal decomposition temperature is higher than the decomposition temperature of described organic material layer;
Form graphic structure at described cover layer.
Alternatively, the material of described organic material layer is photoresist, and described organic material layer is carried out selective removal by exposure, the realization of developing.
Alternatively, forming the graphic structure step comprises:
Adopt PVD or CVD to form the graphic structure material layer;
Described graphic structure material layer is carried out selective etch form graphic structure.
Alternatively, the temperature of described PVD or CVD is higher than 350 ℃.
Alternatively, described selective etch forms in the graphic structure process, also forms the window that exposes described organic material layer, and the removal of described patterned organic material layer is undertaken by described window.
Alternatively, ashing method is adopted in the removal of described patterned organic material layer.
Compared with prior art, the present invention has the following advantages: 1) be different from prior art and adopt separately organic material layer as the scheme of sacrifice layer, the present invention adopts this organic material layer by after graphical, the cover layer that is higher than this organic material layer in its surface coverage one deck decomposition temperature, come with organic material layer is isolated with the structural wood bed of material that subsequent deposition is formed, play preventing that this organic material layer in the high-temperature deposition process from decomposing and overflow and cause the effect of board cavity pollution.In addition, this tectal setting also provides larger material range of choice for organic material layer.
2) in the possibility, the material of this organic material layer is polyimides, tectal material is spin-coating glass (Spin on Glass) or low temperature oxide (Low Temperature Oxide, LTO), and this polyimides is a kind of photoresist, compare with other photoresist, have the following advantages: a) viscosity is high, makes easily the sacrifice layer of high thickness, b) has good flowability, so that sacrificial layer surface is easier to planarization, be conducive to make smooth structure.SOG can be high temperature resistant, form at normal temperatures, can not cause organic material layer to decompose, and SOG is also adopted in semiconductor technology in a large number, there are not the problems such as contamination or process compatibility, the characteristic of SOG is the same with silica simultaneously, belongs to the maturation process in the semiconductor, does not need the extra targetedly processing procedure of developing newly.In addition, this cover layer can also be selected low temperature oxide, and this low temperature oxide is a kind of in the oxide, can be high temperature resistant, and its formation temperature is lower, generally is not higher than 200 ℃.
Description of drawings
Fig. 1 is to the structural representation of the preparation method that Figure 5 shows that the MEMS pressure sensor that the embodiment of the invention one provides.
The specific embodiment
As previously mentioned, in the prior art, for avoiding etching technics, generally adopt photoresist as sacrifice layer, yet this photoresist is organic substance, and its decomposition temperature is lower, when follow-up deposit thereon forms structure, temperature is higher, easily decomposes, and can overflow after the decomposition and cause the board chamber contamination.For the problems referred to above, the present invention adopts this organic material layer by after graphical, the cover layer that is higher than this organic material layer in its surface coverage one deck decomposition temperature, come with organic material layer is isolated with the structural wood bed of material that subsequent deposition is formed, play preventing that this organic material layer in the high-temperature deposition process from decomposing and overflow and cause the purpose of board contamination.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization in the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of the following public specific embodiment.
As stated in the Background Art, existing MEMS device can be sensor, actuator etc., below introduces technical scheme of the present invention as an example of pressure sensor example.In addition, tectal in the sacrifice layer of the present invention act as the structural wood bed of material that subsequent deposition is formed and comes with organic material layer is isolated, plays preventing that this organic material layer in the high-temperature deposition process from decomposing and overflow and cause the effect of board contamination.Thereby the material that satisfies above-mentioned condition can be cover layer of the present invention, below describes respectively as an example of spin-coating glass (Spin on Glass, SOG) and low temperature oxide (Low Temperature Oxide, LTO) example respectively.
Embodiment one
Fig. 1 is to the structural representation of the preparation method that Figure 5 shows that the MEMS pressure sensor that present embodiment provides.Below in conjunction with Fig. 1 to Fig. 5, by the preparation method of this MEMS pressure sensor, introduce in detail the technical scheme of sacrifice layer provided by the invention.
Execution in step S11: as shown in Figure 1, provide Semiconductor substrate 100, be formed with fixed electrode 110 on the Semiconductor substrate 100.Fixed electrode 110 can utilize metal to make, and also can utilize the semi-conducting material that the includes adulterant silicon materials of germanium (as comprise) to make, and certainly, fixed electrode 110 also can utilize other conductive material to make.In addition, when being formed with active component, passive element or metal interconnecting layer in the Semiconductor substrate 100, can utilize corresponding conductive component to double as fixed electrode 110.In one embodiment, can utilize the metal line in the Semiconductor substrate 100 to double as fixed electrode 110.Fixed electrode 110 can be positioned at the surface of Semiconductor substrate 100, also can be positioned at the inside of Semiconductor substrate 100.
Execution in step S12: with reference to Fig. 1 and shown in Figure 2, form organic material layer 120 in Semiconductor substrate 100, described organic material layer 120 is carried out selective removal form graphical organic material layer 120 '.Organic material layer 120 can be photosensitive material, and for example photoresist adopts coating method to be arranged on the Semiconductor substrate 100.The selection of above-mentioned photoresist, with respect to other material, silica for example, can adopt dry etching such as ashing (Ashing) thus remove and avoid sticking effect.Preferably, this photoresist is polyimides, compares with other photoresist, and polyimides has the following advantages: a) viscosity is high, makes easily the sacrifice layer of high thickness; B) have good flowability, so that sacrificial layer surface is easier to planarization, be conducive to make smooth structure.
Among other embodiment, this organic material layer 120 can according to its specific nature, carry out targetedly selective removal.
Execution in step S13: continue with reference to shown in Figure 2, form cover layer 130 at described patterned organic material layer 120 '.The material of this cover layer 130 need satisfy the decomposition temperature that its decomposition temperature is higher than organic material layer 120, so that during the follow-up graphic structure of deposit thereon material, play the purpose of isolated organic material layer 120 and graphic structure material, avoid the high temperature of depositing technics to cause organic material to decompose the pollution depositing technics board chamber of overflowing and causing.
The material of this cover layer 130 is spin-coating glass (Spin on Glass, SOG), this spin-coating glass forms by coating process at normal temperatures, do not relate to high-temperature technology, thereby, can not cause organic material layer 120 to decompose, secondly, the thermal insulation of this spin-coating glass is better, can avoid the high temperature of depositing technics to cause organic material layer 120 to decompose.In addition, because the existence of this cover layer 130 pollutes even organic material layer 120 has decomposed also can not enter the board cavity.
The inventor finds to select suitable organic material layer 120 and cover layer 130 effectively, also can not cause organic material layer 120 and cover layer 130 that strong peeling off occurs when organic material layer 120 has decomposed and causes cover layer 130 to come off.
More than patterned organic material layer 120 ' and on cover layer 130 formed the sacrifice layer in the present embodiment.Particularly, the decomposition temperature of cover layer 130 is higher than the decomposition temperature of organic material layer 120.
Among the embodiment, the material of organic material layer 120 is photoresist.Preferably, the material of organic material layer 120 is polyimides.
This sacrifice layer need be removed in the MEMS pressure sensor.Below continue to introduce other making step of MEMS pressure sensor.
Execution in step S14: with reference to shown in Figure 3, form graphic structure 140 ' at cover layer 130.
Particularly, the formation step of this graphic structure 140 ' comprising: at first, with reference to shown in Figure 3, adopt PVD or CVD deposit graphic structure material layer 140 on cover layer 130, this graphic structure layer is the functional structure of MEMS pressure sensor, have multiplely, below be introduced as an example of sensitive thin film (movable electrode) example.This sensitive thin film can be selected existing movable electrode material, for example SiGe, monocrystalline silicon, polysilicon or metal.The PVD of above-mentioned deposit SiGe, monocrystalline silicon, polysilicon or metal or CVD technique are existing technique, generally generate by high temperature sputter or reaction, generate temperature and generally are higher than 350 ℃.
Then, with reference to shown in Figure 4, graphic structure material layer 140 is carried out photoetching, etching formation graphic structure 140 '.This step can according to the difference in functionality demand of graphic structure 140 ', be selected different mask board to explosure.Preferably, this step also forms the window 150 that exposes patterned organic material layer 120 ' when forming graphic structure 140 '.Among other embodiment, this window 150 also can adopt extra photoetching, etching technics to form.The concrete structure of this window 150 can be groove (Trench) or through hole (Via).
Execution in step S15: with reference to shown in Figure 5, remove by 150 pairs of patterned organic material layers 120 ' of window.The removal method of this step can be ashing (Ashing).
So far, the MEMS pressure sensor of present embodiment forms.Its structure also comprises except comprising above-mentioned sacrifice layer: the graphic structure 140 ' that forms on the described sacrifice layer.
Among the embodiment, this graphic structure 140 ' is sensitive thin film.Preferably, the material of sensitive thin film is at least a in SiGe, monocrystalline silicon, polysilicon, the metal.
Embodiment two
The sacrifice layer of the MEMS pressure sensor that present embodiment two provides, MEMS pressure sensor and preparation method thereof are roughly roughly the same with embodiment one.Difference is: the tectal material in the sacrifice layer adopts low temperature oxide (Low Temperature Oxide, LTO) to substitute SOG.This low temperature oxide is a kind of in the oxide, can be high temperature resistant, and its formation temperature is lower, generally is not higher than 200 ℃.This low temperature oxide also can be so that during the follow-up graphic structure of deposit thereon material, play the effect of isolated organic material layer 120 and graphic structure material, avoid the high temperature of depositing technics to cause organic material to decompose effusion, thereby realize avoiding polluting the purpose of depositing technics chamber.
Be understandable that, above-mentionedly introduce technical scheme of the present invention as an example of the MEMS pressure sensor example, but adopt the MEMS device of sacrifice layer can adopt technical scheme of the present invention.In addition, tectal material in the above-mentioned sacrifice layer is with spin-coating glass (Spin on Glass, SOG) with low temperature oxide (LowTemperature Oxide, LTO) describe for example, be understandable that can play the cover layer material that prevents this organic material layer decomposition effusion purpose in the high-temperature deposition process can be as cover layer of the present invention.
Among the present invention, each embodiment adopts laddering literary style, and emphasis is described the difference with previous embodiment, and the same structure among each embodiment and preparation method are with reference to the same section of previous embodiment.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection domain of technical solution of the present invention according to technical spirit of the present invention.
Claims (13)
1. the sacrifice layer of a MEMS device is characterized in that, comprising:
Patterned organic material layer and be coated on cover layer on the described patterned organic material layer, described tectal decomposition temperature is higher than the decomposition temperature of described organic material layer.
2. the sacrifice layer of MEMS device according to claim 1 is characterized in that, the material of described organic material layer is photoresist.
3. the sacrifice layer of MEMS device according to claim 1 is characterized in that, the material of described organic material layer is polyimides.
4. according to claim 1 to the sacrifice layer of the described MEMS device of 3 any one, it is characterized in that described tectal material is SOG or low temperature oxide.
5. a MEMS device is characterized in that, comprising:
The described sacrifice layer of the claims 1 to 4 any one;
The graphic structure that forms on the described sacrifice layer.
6. MEMS device according to claim 5 is characterized in that, described graphic structure is sensitive thin film.
7. MEMS device according to claim 6 is characterized in that, the material of described sensitive thin film is at least a in SiGe, monocrystalline silicon, polysilicon, the metal.
8. the preparation method of a MEMS device is characterized in that, comprising:
Form organic material layer in described Semiconductor substrate, described organic material layer is carried out selective removal form patterned organic material layer;
Form cover layer at described patterned organic material layer, described tectal decomposition temperature is higher than the decomposition temperature of described organic material layer;
Form graphic structure at described cover layer.
9. preparation method according to claim 8 is characterized in that, the material of described organic material layer is photoresist, and described organic material layer is carried out selective removal by exposure, the realization of developing.
10. preparation method according to claim 8 is characterized in that, forms the graphic structure step and comprises:
Adopt PVD or CVD to form the graphic structure material layer;
Described graphic structure material layer is carried out selective etch form graphic structure.
11. preparation method according to claim 10 is characterized in that, the temperature of described PVD or CVD is higher than 350 ℃.
12. preparation method according to claim 10 is characterized in that, described selective etch forms in the graphic structure process, also forms the window that exposes described organic material layer, and the removal of described patterned organic material layer is undertaken by described window.
13. preparation method according to claim 12 is characterized in that, ashing method is adopted in the removal of described patterned organic material layer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104627955A (en) * | 2015-02-06 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | Method for preparing MEMS closed chamber |
| CN104743497A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring MEMS release performances |
| CN104787719A (en) * | 2015-03-11 | 2015-07-22 | 上海华虹宏力半导体制造有限公司 | Manufacturing method for micro-electro-mechanical system pressure sensor |
| CN105092112A (en) * | 2014-05-21 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | MEMS pressure sensor and preparation method thereof |
| CN113555287A (en) * | 2021-07-22 | 2021-10-26 | 吉林建筑大学 | Preparation method of moisture triggered degradation P-type transient thin film transistor |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000022172A (en) * | 1998-06-30 | 2000-01-21 | Matsushita Electric Ind Co Ltd | Converter and manufacture thereof |
| WO2006077565A1 (en) * | 2005-01-24 | 2006-07-27 | University College Cork - National University Of Ireland, Cork; | Packaging of micro devices |
| CN101298313A (en) * | 2008-05-30 | 2008-11-05 | 中国科学院上海技术物理研究所 | Technological process for quickly releasing edge millimeter-level large area film |
| CN101367504A (en) * | 2007-08-17 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing micro-electronic mechanical system with micro-mirror |
| CN102353459A (en) * | 2011-07-05 | 2012-02-15 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| CN102616731A (en) * | 2012-03-27 | 2012-08-01 | 上海宏力半导体制造有限公司 | Manufacture method of micro electro mechanical system (MEMS) device |
| CN102683474A (en) * | 2011-03-18 | 2012-09-19 | 浙江大立科技股份有限公司 | Infrared detector manufacturing method based on compound sacrificial layers |
-
2012
- 2012-12-21 CN CN2012105644152A patent/CN103011052A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000022172A (en) * | 1998-06-30 | 2000-01-21 | Matsushita Electric Ind Co Ltd | Converter and manufacture thereof |
| WO2006077565A1 (en) * | 2005-01-24 | 2006-07-27 | University College Cork - National University Of Ireland, Cork; | Packaging of micro devices |
| CN101367504A (en) * | 2007-08-17 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing micro-electronic mechanical system with micro-mirror |
| CN101298313A (en) * | 2008-05-30 | 2008-11-05 | 中国科学院上海技术物理研究所 | Technological process for quickly releasing edge millimeter-level large area film |
| CN102683474A (en) * | 2011-03-18 | 2012-09-19 | 浙江大立科技股份有限公司 | Infrared detector manufacturing method based on compound sacrificial layers |
| CN102353459A (en) * | 2011-07-05 | 2012-02-15 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| CN102616731A (en) * | 2012-03-27 | 2012-08-01 | 上海宏力半导体制造有限公司 | Manufacture method of micro electro mechanical system (MEMS) device |
Non-Patent Citations (1)
| Title |
|---|
| O. BRAND，G. K. FEDDER: "《CMOS MEMS技术与应用》", 31 July 2007 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104743497A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring MEMS release performances |
| CN105092112A (en) * | 2014-05-21 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | MEMS pressure sensor and preparation method thereof |
| CN105092112B (en) * | 2014-05-21 | 2018-03-20 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS pressure sensor and preparation method thereof |
| CN104627955A (en) * | 2015-02-06 | 2015-05-20 | 苏州工业园区纳米产业技术研究院有限公司 | Method for preparing MEMS closed chamber |
| CN104787719A (en) * | 2015-03-11 | 2015-07-22 | 上海华虹宏力半导体制造有限公司 | Manufacturing method for micro-electro-mechanical system pressure sensor |
| CN104787719B (en) * | 2015-03-11 | 2017-03-15 | 上海华虹宏力半导体制造有限公司 | Microelectronic pressure sensor for mechanical system manufacture method |
| CN113555287A (en) * | 2021-07-22 | 2021-10-26 | 吉林建筑大学 | Preparation method of moisture triggered degradation P-type transient thin film transistor |
| CN113555287B (en) * | 2021-07-22 | 2022-05-24 | 吉林建筑大学 | Preparation method of moisture triggered degradation P-type transient thin film transistor |
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