CN103002229B - 固体拍摄元件 - Google Patents

固体拍摄元件 Download PDF

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Publication number
CN103002229B
CN103002229B CN201210070761.5A CN201210070761A CN103002229B CN 103002229 B CN103002229 B CN 103002229B CN 201210070761 A CN201210070761 A CN 201210070761A CN 103002229 B CN103002229 B CN 103002229B
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CN
China
Prior art keywords
mentioned
reset
elementary cell
solid
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210070761.5A
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English (en)
Chinese (zh)
Other versions
CN103002229A (zh
Inventor
关根弘一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN103002229A publication Critical patent/CN103002229A/zh
Application granted granted Critical
Publication of CN103002229B publication Critical patent/CN103002229B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201210070761.5A 2011-09-16 2012-03-16 固体拍摄元件 Expired - Fee Related CN103002229B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP202814/2011 2011-09-16
JP2011202814A JP5547150B2 (ja) 2011-09-16 2011-09-16 固体撮像素子

Publications (2)

Publication Number Publication Date
CN103002229A CN103002229A (zh) 2013-03-27
CN103002229B true CN103002229B (zh) 2016-04-20

Family

ID=47879831

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210070761.5A Expired - Fee Related CN103002229B (zh) 2011-09-16 2012-03-16 固体拍摄元件

Country Status (4)

Country Link
US (1) US8754974B2 (enExample)
JP (1) JP5547150B2 (enExample)
CN (1) CN103002229B (enExample)
TW (1) TWI463649B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3055569B2 (ja) 1991-02-25 2000-06-26 小松精練株式会社 ポリアミド系繊維のバニリンによる黄変の防止方法
FR2971085A1 (fr) * 2011-01-31 2012-08-03 Commissariat Energie Atomique Matrice de composants electronique fiabilisee et procede de localisation de defaut dans la matrice
WO2016163241A1 (ja) * 2015-04-07 2016-10-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および電子装置
CN105578074B (zh) * 2015-12-18 2017-11-10 广东欧珀移动通信有限公司 图像传感器及具有其的终端
JP2017204528A (ja) 2016-05-10 2017-11-16 セイコーエプソン株式会社 固体撮像装置
JP7467061B2 (ja) * 2019-10-09 2024-04-15 株式会社ジャパンディスプレイ 検出装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1848925A (zh) * 2005-04-15 2006-10-18 株式会社东芝 固体摄像装置
CN101978499A (zh) * 2008-03-17 2011-02-16 伊斯曼柯达公司 具有共享扩散区域的堆叠式图像传感器

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Publication number Priority date Publication date Assignee Title
JP3838665B2 (ja) 1995-08-11 2006-10-25 株式会社 東芝 Ｍｏｓ型固体撮像装置
KR100374250B1 (ko) * 1996-07-24 2003-05-16 오끼 덴끼 고오교 가부시끼가이샤 반도체장치
EP0950881A3 (de) * 1998-04-17 2000-08-16 NanoPhotonics AG Verfahren und Vorrichtung zur automatischen relativen Justierung von Proben bezüglich eines Ellipsometers
JP3512152B2 (ja) * 1998-10-14 2004-03-29 松下電器産業株式会社 増幅型固体撮像装置およびその駆動方法
US6657665B1 (en) * 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
US7123299B1 (en) * 1999-04-15 2006-10-17 Olympus Optical Co., Ltd. Color image pickup device and color image pickup apparatus including a randomized color coding array
US7142240B1 (en) * 2000-07-17 2006-11-28 Psion Teklogix Systems, Inc. Active pixel sensor array reset
JP2003007995A (ja) * 2001-06-20 2003-01-10 Iwate Toshiba Electronics Co Ltd Ｃｍｏｓイメージセンサ
EP1605686B1 (en) * 2004-06-05 2007-04-11 STMicroelectronics Limited Solid state image sensor
KR100674925B1 (ko) * 2004-12-07 2007-01-26 삼성전자주식회사 허니콤 구조의 능동 픽셀 센서
US7714917B2 (en) * 2005-08-30 2010-05-11 Aptina Imaging Corporation Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
US7465623B2 (en) * 2006-08-28 2008-12-16 Advanced Micro Devices, Inc. Methods for fabricating a semiconductor device on an SOI substrate
KR20080041912A (ko) * 2006-11-08 2008-05-14 삼성전자주식회사 감도 제어가 가능한 씨모스 이미지 센서의 픽셀 회로
US8144226B2 (en) * 2008-01-04 2012-03-27 AltaSens, Inc Two-by-two pixel structure in an imaging system-on-chip
KR20110083936A (ko) * 2010-01-15 2011-07-21 삼성전자주식회사 광자 굴절용 마이크로 렌즈를 구비하는 단위화소, 상기 단위화소를 구비하는 백사이드 일루미네이션 ｃｍｏｓ 이미지센서 및 상기 단위화소의 형성방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1848925A (zh) * 2005-04-15 2006-10-18 株式会社东芝 固体摄像装置
CN101978499A (zh) * 2008-03-17 2011-02-16 伊斯曼柯达公司 具有共享扩散区域的堆叠式图像传感器

Also Published As

Publication number Publication date
CN103002229A (zh) 2013-03-27
JP2013065652A (ja) 2013-04-11
US8754974B2 (en) 2014-06-17
JP5547150B2 (ja) 2014-07-09
US20130069119A1 (en) 2013-03-21
TWI463649B (zh) 2014-12-01
TW201314875A (zh) 2013-04-01

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