CN102998036B - 力传感器 - Google Patents

力传感器 Download PDF

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Publication number
CN102998036B
CN102998036B CN201210337966.5A CN201210337966A CN102998036B CN 102998036 B CN102998036 B CN 102998036B CN 201210337966 A CN201210337966 A CN 201210337966A CN 102998036 B CN102998036 B CN 102998036B
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CN
China
Prior art keywords
alar part
semiconductor body
power
force snesor
ingress area
Prior art date
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CN201210337966.5A
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English (en)
Chinese (zh)
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CN102998036A (zh
Inventor
M·鲍曼
A·彼得
P·鲁特
O·保罗
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TDK- Maikenasi limited liability company
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MEIKENAS CO
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Publication of CN102998036A publication Critical patent/CN102998036A/zh
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Measuring Fluid Pressure (AREA)
CN201210337966.5A 2011-09-13 2012-09-13 力传感器 Active CN102998036B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201110112935 DE102011112935B4 (de) 2011-09-13 2011-09-13 Kraftsensor
DE102011112935.2 2011-09-13

Publications (2)

Publication Number Publication Date
CN102998036A CN102998036A (zh) 2013-03-27
CN102998036B true CN102998036B (zh) 2015-12-02

Family

ID=47022430

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210337966.5A Active CN102998036B (zh) 2011-09-13 2012-09-13 力传感器

Country Status (4)

Country Link
US (1) US8915152B2 (fr)
EP (1) EP2570786B1 (fr)
CN (1) CN102998036B (fr)
DE (1) DE102011112935B4 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015104410B4 (de) * 2015-03-24 2018-09-13 Tdk-Micronas Gmbh Drucksensor
DE102015114386B3 (de) * 2015-08-28 2016-11-17 Bundesrepublik Deutschland, vertr. durch das Bundesministerium für Wirtschaft und Energie, dieses vertreten durch den Präsidenten der Physikalisch-Technischen Bundesanstalt Lastverteilerelement
CN114046911B (zh) * 2021-11-19 2023-11-17 山东理工大学 一种静电激励梳齿检测的mems谐振式压力传感器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129042A (en) * 1977-11-18 1978-12-12 Signetics Corporation Semiconductor transducer packaged assembly
US5600074A (en) * 1991-11-15 1997-02-04 Robert Bosch Gmbh Silicon chip for use in a force-detection sensor
CN2888651Y (zh) * 2005-10-26 2007-04-11 哈尔滨市东北汽车电子工程技术研究开发中心 抗高过载soi压力敏感芯片的结构
CN201935780U (zh) * 2010-05-26 2011-08-17 苏州敏芯微电子技术有限公司 用于真空测量的低量程压阻式压力传感器

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US3417361A (en) * 1966-03-07 1968-12-17 Conrac Corp Semiconductive pressure transducer
US4359498A (en) * 1981-04-20 1982-11-16 Kulite Semiconductor Products, Inc. Transducer structure employing vertically walled diaphragms with quasi rectangular active areas
DE3702412A1 (de) 1987-01-28 1988-08-18 Philips Patentverwaltung Druckaufnehmer mit einem siliziumkoerper
GB2207804B (en) * 1987-08-06 1990-08-15 Stc Plc Pressure sensor and manufacturing process therefor
DE3937522A1 (de) * 1989-11-10 1991-05-16 Texas Instruments Deutschland Mit einem traegerelement verbundener halbleiter-drucksensor
DE4106102A1 (de) * 1991-02-27 1992-09-03 Bosch Gmbh Robert Druckgeber zur druckerfassung im brennraum von brennkraftmaschinen
JP3114006B2 (ja) * 1994-08-29 2000-12-04 セイコーインスツルメンツ株式会社 半導体装置、及び、その製造方法
JP3079983B2 (ja) * 1995-12-26 2000-08-21 株式会社日立製作所 半導体型燃焼圧センサ
US6346742B1 (en) * 1998-11-12 2002-02-12 Maxim Integrated Products, Inc. Chip-scale packaged pressure sensor
JP3479064B1 (ja) * 2002-04-12 2003-12-15 北陸電気工業株式会社 半導体力センサ
US7772657B2 (en) * 2004-12-28 2010-08-10 Vladimir Vaganov Three-dimensional force input control device and fabrication
US7554167B2 (en) * 2003-12-29 2009-06-30 Vladimir Vaganov Three-dimensional analog input control device
FR2867275B1 (fr) * 2004-03-03 2006-05-19 Seb Sa Capteur de poids
WO2006114832A1 (fr) * 2005-04-06 2006-11-02 Murata Manufacturing Co., Ltd. Détecteur d’accélération
US7723232B2 (en) * 2005-06-30 2010-05-25 Texas Instruments Incorporated Full backside etching for pressure sensing silicon
WO2007032032A1 (fr) * 2005-09-16 2007-03-22 Stmicroelectronics S.R.L. Capteur de pression présentant une valeur de pleine échelle élevée et son boîtier
JP5303101B2 (ja) 2006-05-02 2013-10-02 本田技研工業株式会社 力覚センサ用チップ
US7331241B1 (en) * 2006-08-22 2008-02-19 Kulite Semiconductor Products, Inc. Low cost pressure sensor for measuring oxygen pressure
NL2000566C2 (nl) * 2007-03-30 2008-10-02 Elmos Advanced Packaging B V Sensorelement en sensorsamenstel met omhulling.
US8445978B2 (en) * 2008-11-26 2013-05-21 Freescale Semiconductor, Inc. Electromechanical transducer device and method of forming a electromechanical transducer device
JP5024358B2 (ja) * 2009-01-08 2012-09-12 株式会社日本自動車部品総合研究所 作用力検出装置
JP2011112419A (ja) * 2009-11-25 2011-06-09 Alps Electric Co Ltd フォースセンサ及びその実装方法
EP2523895B1 (fr) * 2010-01-11 2014-06-04 ELMOS Semiconductor AG Composant semi-conducteur microélectromécanique
US8378435B2 (en) * 2010-12-06 2013-02-19 Wai Yew Lo Pressure sensor and method of assembling same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129042A (en) * 1977-11-18 1978-12-12 Signetics Corporation Semiconductor transducer packaged assembly
US5600074A (en) * 1991-11-15 1997-02-04 Robert Bosch Gmbh Silicon chip for use in a force-detection sensor
CN2888651Y (zh) * 2005-10-26 2007-04-11 哈尔滨市东北汽车电子工程技术研究开发中心 抗高过载soi压力敏感芯片的结构
CN201935780U (zh) * 2010-05-26 2011-08-17 苏州敏芯微电子技术有限公司 用于真空测量的低量程压阻式压力传感器

Also Published As

Publication number Publication date
US20130061691A1 (en) 2013-03-14
EP2570786B1 (fr) 2016-04-27
DE102011112935A1 (de) 2013-03-14
DE102011112935B4 (de) 2015-02-12
EP2570786A3 (fr) 2015-11-04
EP2570786A2 (fr) 2013-03-20
CN102998036A (zh) 2013-03-27
US8915152B2 (en) 2014-12-23

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Address after: Freiburg

Patentee after: TDK- Maikenasi limited liability company

Address before: Freiburg

Patentee before: Meikenas Co.