CN102995111B - Method and device for measuring silicon material liquid level position in single crystal furnace in non-contact manner - Google Patents
Method and device for measuring silicon material liquid level position in single crystal furnace in non-contact manner Download PDFInfo
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- CN102995111B CN102995111B CN201210441205.4A CN201210441205A CN102995111B CN 102995111 B CN102995111 B CN 102995111B CN 201210441205 A CN201210441205 A CN 201210441205A CN 102995111 B CN102995111 B CN 102995111B
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Abstract
The invention discloses a method and a device for measuring silicon material liquid level position in a single crystal furnace in a non-contact manner in the field of single crystal manufacturing technology. The device comprises a camera used for capturing projected images of the inner side at the lower port of a flow guiding cylinder on a silicon material liquid level, a computer which is connected with the camera for measuring the distance between two points on the image and computing the distance between the image collecting point and the silicon material liquid level, and a PLC (Programmable Logic Controller) which is used for adjusting the silicon material liquid level position. The method and the device disclosed in the invention can directly and accurately measure the relative position of the liquid level of liquid-state polycrystalline silicon material under the high-temperature and negative-pressure environment, reduce the labor intensity of on-site single crystal workers and provide a low-cost and high-reliability liquid level measuring scheme for an automatic single crystal furnace.
Description
Technical field
The present invention relates to monocrystalline manufacturing technology field, particularly single crystal growing furnace contactless silicon feed liquid face location measurement method and device.
Background technology
Pulling of crystals manufacture is that many for raw material silicon crystal blocks are put into quartz crucible, and in the environment of high temperature negative pressure, heating and melting forms liquid-state silicon material, and use seed crystal to insert liquid-state silicon feed liquid face and complete seeding, shouldering, isodiametric growth, final production goes out silicon single crystal rod.The silicon single crystal rod grown in single crystal growing furnace as shown in Figure 1, in this production process, need the liquid level position of liquid polycrystalline silicon material to be positioned at the heating ideal area of well heater all the time constant, when the solid-liquid interface of such guarantee solid single crystal silicon rod and liquid polycrystalline silicon material has suitable growth temperature and a single crystal growing, liquid level is stable.In Fig. 1, the growth pulling rate v of silicon single crystal rod
jbe far longer than or be less than the raising speed v of liquid polycrystalline silicon material liquid level
gtime, all can there is the situation that liquid level leaves heating ideal zone, therefore, ensure v
jand v
gmutual coupling, just can make the liquid level position of liquid polycrystalline silicon material be positioned at the heating ideal area of well heater all the time.Usually by v
jwith v
gratio be called crucible follow than, only ensure that crucible follows the liquid level position of polycrystalline silicon material more liquid than, guarantee to be positioned at the heating ideal area of well heater all the time.
At present without any the Method and Technology of direct-detection liquid level position, the method that artificial visually examine or employing can only be leaned on to weigh is estimated indirectly.Rise too fast or excessively slow if workman estimates liquid level, then go adjustment crucible to follow than parameter, ensure that the liquid level position of liquid polycrystalline silicon material is positioned at the heating ideal area of well heater all the time with this.Indirect estimation of weighing is then take the silicon single crystal rod total amount grown into, then remaining liquid silicon material in crucible is estimated, the position of liquid-state silicon material is judged according to the estimation of crucible volumetric shape, because crucible is easily out of shape in hot environment, therefore in estimation process, easily there is the situation that estimation error strengthens, cause liquid level position measurement effect very bad.In single crystal growth process, because the factors such as velocity error crucible distortion can cause crucible to follow than change, if find that crucible is followed than change not in time, then liquid level can be caused to rise too fast or decline too fast, if liquid level rising is too fast do not find that the result caused is exactly that liquid level floods guide shell, cause accident; If liquid level decline is too fast do not find that the result caused is exactly brilliant line broken string, greatly affect crystal forming rate, and liquid level is once have left desirable heating zone, temperature cannot ensure also greatly to affect crystal forming rate.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is: how in real time accurately control crucible follow than.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of single crystal growing furnace contactless silicon feed liquid face position-measurement device, it is characterized in that, this device for controlled by the imaging be projected on camera inside guide shell end opening on silicon feed liquid face crucible follow than, this device comprises:
Camera, for gathering the image projected on silicon feed liquid face inside guide shell end opening;
The computer be connected with camera, the Distance geometry computed image collection point in measurement image between two points is to the distance in silicon feed liquid face;
The PLC be connected with computer, for adjusting the position in silicon feed liquid face.
A kind of single crystal growing furnace contactless silicon feed liquid face location measurement method, it is characterized in that, the method comprises the following steps:
S1: by camera collection crucible follow than for inside guide shell end opening during set(ting)value at the projected image in silicon feed liquid face;
S2: measure the projector distance of guide shell end opening inside diameter on silicon feed liquid face on described projected image;
S3: calculate the distance of camera to silicon feed liquid face;
S4: the projected image in silicon feed liquid face inside Real-time Collection guide shell end opening, when the camera that the projected image of Real-time Collection calculates to the Distance geometry crucible in silicon feed liquid face follow than for camera during set(ting)value different to the distance in silicon feed liquid face time, by computer control PLC, the position in silicon feed liquid face is adjusted, until and the crucible of setting follow than till equal.
Described camera to the calculation formula of the distance in silicon feed liquid face is:
L=(H×f)/h
Wherein:
L is the distance of camera to silicon feed liquid face;
H is guide shell end opening inside diameter value;
F is the focal length of camera;
H is the projector distance of guide shell end opening inside diameter on silicon feed liquid face.
Described step S4 is specially:
S41: the projected image in silicon feed liquid face inside camera collection guide shell end opening;
S42: when the camera that the projected image that gathers according to step S41 calculates is followed than for camera during set(ting)value is to when the difference of the distance in silicon feed liquid face is in setting range to the Distance geometry crucible in silicon feed liquid face, return step S41, otherwise enter step S43;
S43: when described difference be on the occasion of time, control PLC increases the lift velocity of crucible and reduces the growth pulling rate of silicon single crystal rod, returns step S41;
When described difference is negative value, control PLC reduces the lift velocity of crucible and increases the growth pulling rate of silicon single crystal rod, returns step S41.
The lift velocity of described increase crucible is: make the lift velocity of crucible this moment increase per hour 4 millimeters.
The growth pulling rate of described reduction silicon single crystal rod is: make the growth pulling rate of silicon single crystal rod this moment reduction per hour 6 millimeters.
The lift velocity of described reduction crucible is: make the lift velocity of crucible this moment reduction per hour 4 millimeters.
The growth pulling rate of described increase silicon single crystal rod is: make the growth pulling rate of silicon single crystal rod this moment increase per hour 6 millimeters.
(3) beneficial effect
The present invention measures silicon material liquid level position in real time, when discovery silicon material liquid level position has variation will send signal to PLC, allow PLC automatically adjust crucible follow than, completely without manpower intervention, significantly reduce the labour intensity of workman.The present invention can the liquid level relative position of direct Measurement accuracy liquid polycrystalline silicon material under high temperature subnormal ambient, reduces the labour intensity of on-the-spot monocrystalline workman, the level detection scheme that the single crystal growing furnace for automatization provides low cost highly reliable.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention;
Fig. 2 is the distance schematic diagram of collection point to silicon feed liquid face of calculating projected image;
Fig. 3 is that crucible is followed than the measuring distance for projected image during set(ting)value;
The measuring distance of projected image when Fig. 4 is the rising of silicon feed liquid face;
The measuring distance of projected image when Fig. 5 is the decline of silicon feed liquid face.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
The present invention by the imaging be projected on camera inside guide shell end opening on silicon feed liquid face control crucible follow than, comprising:
Camera, for gathering the image projected on silicon feed liquid face inside guide shell end opening;
The computer be connected with camera, the Distance geometry computed image collection point in measurement image between two points is to the distance in silicon feed liquid face;
The PLC be connected with computer, for adjusting the position in silicon feed liquid face.
The inventive method comprises the following steps:
S1: by camera collection crucible follow than for inside guide shell end opening during set(ting)value at the projected image in silicon feed liquid face;
S2: measure the projector distance of guide shell end opening inside diameter on silicon feed liquid face on described projected image;
S3: calculate the distance of camera to silicon feed liquid face;
S4: the projected image in silicon feed liquid face inside Real-time Collection guide shell end opening, when the camera that the projected image of Real-time Collection calculates to the Distance geometry crucible in silicon feed liquid face follow than for camera during set(ting)value different to the distance in silicon feed liquid face time, by computer control PLC, the position in silicon feed liquid face is adjusted, until and the crucible of setting follow than till equal.
S41: the projected image in silicon feed liquid face inside camera collection guide shell end opening;
S42: when the camera that the projected image that gathers according to step S41 calculates is followed than for camera during set(ting)value is to when the difference of the distance in silicon feed liquid face is in setting range to the Distance geometry crucible in silicon feed liquid face, return step S41, otherwise enter step S43;
S43: when described difference be on the occasion of time, control PLC increases the lift velocity of crucible and reduces the growth pulling rate of silicon single crystal rod, returns step S41;
When described difference is negative value, control PLC reduces the lift velocity of crucible and increases the growth pulling rate of silicon single crystal rod, returns step S41.
The present invention is that the camera of high pixel is installed at some place outside body of heater, camera is enable directly to photograph guide shell end opening in body of heater and the inverted image of end opening on liquid level, camera lens is L to the distance being positioned at desirable heating zone liquid level, signal of the present invention as shown in Figure 1, comprise, silicon single crystal rod 1, guide shell 2, crucible 3, well heater 4, camera 5, computer 6 and PLC7.
Because camera has a certain degree, (this angle is determined according to single crystal furnace structure scene) gathers image from the side, so, inside the end opening of guide shell 2, and inverted image inside end opening and liquid level finally on camera imaging be just all oval, the image display of this imaging is as Fig. 2.Inverted image inside the end opening of imaging on camera 5 is determined the inverted image point of two end points of the end opening inside diameter of two distances point A and B(farthest and guide shell 2), distance between measurement point A and B, the distance between these 2 is exactly the inverted image value h of end opening inside diameter.When installing guide shell, the diameter value H inside the end opening using slide calliper rule actual measurement to obtain guide shell 2, then according to Optical Formula h/H=f/L, deriving camera to the calculation formula of the distance in silicon feed liquid face is:
L=(H×f)/h （1）
Wherein:
L is the distance of camera to silicon feed liquid face;
H is the diameter value inside guide shell end opening, and slide calliper rule just can be used when installing guide shell to survey and obtain, be certain value, as shown in Figure 2;
F is the focal length of camera, is definite value;
H is the projector distance of guide shell end opening inside diameter on silicon feed liquid face, and the position difference according to silicon feed liquid face changes, and is a variable; As shown in Figure 2.
Fig. 3 is the distance schematic diagram of collection point to silicon feed liquid face of calculating projected image.
Formula (1) describe camera to the distance L in silicon feed liquid face be one with the re-imaging length h on camera be inversely proportional to fixing than array function relation, there is this relation, as long as we detect re-imaging length h accurately can judge that liquid level relatively and the physical location of camera lens.
According to above rational analysis, as long as we determine the liquid level position in desirable heating zone, the actual change situation of silicon material liquid level position in single crystal growth process afterwards can be judged, with this adjust crucible follow than.Concrete grammar is as follows:
After molten material completes, silicon feed liquid face is just in time positioned at desirable heating zone, and camera starts to gather image and determines h at this moment, as Fig. 3, after seeding starts, if when crucible is followed more improper than parameter, can produce two kinds of situations:
1. liquid level rises
The now imaging of guide shell inverted image will become large, and the diameter value h namely projected on silicon feed liquid face inside guide shell end opening will be increased to h ', as Fig. 4.According to formula 1-1, L will diminish, it can thus be appreciated that liquid level rises, computer calculates the L ' after liquid level rising according to formula 1-1, according to L before, the ascending amount Δ x=L-L ' that just can calculate liquid level on the occasion of, Δ x is sent to PLC, PLC, according to Δ x, makes the growth pulling rate v of silicon single crystal rod
jincrease per hour 6 millimeters, makes the lift velocity of crucible reduction per hour 4 millimeters, to reduce the raising speed v in silicon feed liquid face
g, with this ensure suitable crucible follow than, make liquid level be positioned at desirable heating zone all the time.
2. liquid level declines
The now imaging of guide shell inverted image will diminish, and the diameter value h namely projected on silicon feed liquid face inside guide shell end opening will be reduced to h ", as Fig. 5.According to formula 1-1, L will become large, it can thus be appreciated that liquid level declines, computer calculates the L ' after liquid level decline according to formula 1-1, according to L before, the ascending amount Δ x=L-L ' that just can calculate liquid level is negative value, sends Δ x to PLC, PLC, according to Δ x, makes the growth pulling rate v of silicon single crystal rod
jreduction per hour 6 millimeters, makes the lift velocity of crucible increase per hour 4 millimeters, to increase the raising speed v in silicon feed liquid face
g, with this ensure suitable crucible follow than, make liquid level be positioned at desirable heating zone all the time.
Above embodiment is only for illustration of the present invention; and be not limitation of the present invention; the those of ordinary skill of relevant technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (1)
1. utilize a single crystal growing furnace contactless silicon feed liquid face location measurement method for single crystal growing furnace contactless silicon feed liquid face position-measurement device, it is characterized in that,
Described device for controlled by the imaging be projected on camera inside guide shell end opening on silicon feed liquid face crucible follow than, this device comprises:
Camera, for gathering the image projected on silicon feed liquid face inside guide shell end opening;
The computer be connected with camera, the Distance geometry computed image collection point in measurement image between two points is to the distance in silicon feed liquid face;
The PLC be connected with computer, for adjusting the position in silicon feed liquid face;
Said method comprising the steps of:
S1: by camera collection crucible follow than for inside guide shell end opening during set(ting)value at the projected image in silicon feed liquid face;
S2: measure the projector distance of guide shell end opening inside diameter on silicon feed liquid face on described projected image;
S3: calculate the distance of camera to silicon feed liquid face;
S4: the projected image in silicon feed liquid face inside Real-time Collection guide shell end opening, when the camera that the projected image of Real-time Collection calculates to the Distance geometry crucible in silicon feed liquid face follow than for camera during set(ting)value different to the distance in silicon feed liquid face time, by computer control PLC, the position in silicon feed liquid face is adjusted, until and the crucible of setting follow than till equal;
Wherein, described camera to the calculation formula of the distance in silicon feed liquid face is:
L＝(H×f)/h
Wherein:
L is the distance of camera to silicon feed liquid face;
H is guide shell end opening inside diameter value;
F is the focal length of camera;
H is the projector distance of guide shell end opening inside diameter on silicon feed liquid face;
Wherein, described step S4 is specially:
S41: the projected image in silicon feed liquid face inside camera collection guide shell end opening;
S42: when the camera that the projected image that gathers according to step S41 calculates is followed than for camera during set(ting)value is to when the difference of the distance in silicon feed liquid face is in setting range to the Distance geometry crucible in silicon feed liquid face, return step S41, otherwise enter step S43;
S43: when described difference be on the occasion of time, control PLC increases the lift velocity of crucible and reduces the growth pulling rate of silicon single crystal rod, returns step S41;
When described difference is negative value, control PLC reduces the lift velocity of crucible and increases the growth pulling rate of silicon single crystal rod, returns step S41;
Wherein, step S43 regulate in the following way crucible follow than:
Liquid level is risen:
The distance L ' of the rear camera of liquid level rising to silicon feed liquid face is calculated according to L=(H × f)/h, before rising according to liquid level, camera is to the distance L in silicon feed liquid face, the ascending amount calculating liquid level is positive value delta x=L-L ', send Δ x to PLC, PLC, according to Δ x, makes the growth pulling rate v of silicon single crystal rod
jincrease per hour 6 millimeters, makes the lift velocity of crucible reduction per hour 4 millimeters, to reduce the raising speed v in silicon feed liquid face
g, with ensure suitable crucible follow than, make liquid level be positioned at desirable heating zone all the time;
Liquid level is declined:
The distance L ' of the rear camera of liquid level decline to silicon feed liquid face is calculated according to L=(H × f)/h, before declining according to liquid level, camera is to the L of the distance in silicon feed liquid face, the slippage calculating liquid level is negative value Δ x=L-L ', send Δ x to PLC, PLC, according to Δ x, makes the growth pulling rate v of silicon single crystal rod
jreduction per hour 6 millimeters, makes the lift velocity of crucible increase per hour 4 millimeters, to increase the raising speed v in silicon feed liquid face
g, with ensure suitable crucible follow than, make liquid level be positioned at desirable heating zone all the time.
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| CN201210441205.4A CN102995111B (en) | 2012-11-07 | 2012-11-07 | Method and device for measuring silicon material liquid level position in single crystal furnace in non-contact manner |
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