CN116288662A - Method for controlling surface distance of Czochralski single crystal liquid - Google Patents
Method for controlling surface distance of Czochralski single crystal liquid Download PDFInfo
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- CN116288662A CN116288662A CN202310558556.1A CN202310558556A CN116288662A CN 116288662 A CN116288662 A CN 116288662A CN 202310558556 A CN202310558556 A CN 202310558556A CN 116288662 A CN116288662 A CN 116288662A
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- 239000007788 liquid Substances 0.000 title claims abstract description 262
- 239000013078 crystal Substances 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title claims abstract description 84
- 238000001514 detection method Methods 0.000 claims abstract description 146
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 6
- 239000000523 sample Substances 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 abstract description 25
- 230000001105 regulatory effect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000005266 casting Methods 0.000 description 6
- 230000001174 ascending effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a method for controlling the surface distance of a Czochralski single crystal liquid, which comprises the following steps: when entering a temperature stabilizing process, adjusting the liquid level detection device to a preset liquid level distance; and (3) detecting the surface position of the silicon solution: judging whether the liquid level detection device is in contact with the liquid level of the silicon solution, if so, controlling the crucible to descend, and otherwise, controlling the crucible to ascend; repeating the steps until the furnace stopping process, and stopping the liquid surface distance control. The invention has the beneficial effects that the crucible is controlled to ascend or descend according to whether the liquid level detection device is in contact with the surface of the silicon solution or not, so that the actual liquid level distance is adapted to the preset liquid level distance, the relation between the actual liquid level distance and the preset liquid level distance is regulated in real time in the crystal pulling process, so that the actual liquid level distance and the preset liquid level distance are kept in dynamic balance, the actual liquid level distance meets the crystal pulling process requirement, the liquid level distance is ensured to be accurately controlled according to the process requirement, and the requirement of the Czochralski single crystal, especially the IC-level semiconductor single crystal, on the temperature gradient is ensured.
Description
Technical Field
The invention belongs to the technical field of Czochralski crystals, and particularly relates to a method for controlling the surface distance of a Czochralski crystal liquid.
Background
As shown in fig. 3, the control of the liquid level distance is currently determined by a small quartz rod 8 mounted on the inner guide cylinder 5, for example, the liquid level distance is required to be 20mm, the small quartz rod 8 extends out of the lower edge of the outer guide cylinder 6 by 10mm, and after the small quartz rod 8 contacts the silicon solution surface 7, the crucible 9 descends by 10mm, so that the positioning of the liquid level distance of 20mm is realized.
The disadvantage of using small quartz rods to determine the liquid surface distance:
and (3) mounting a small quartz rod: as shown in fig. 3, the inner guide cylinder 5 is perforated, one end of an L-shaped small quartz rod 8 is clamped into the inner guide cylinder 5, and the installation angle of the small quartz rod 8 is affected by the perforation angle. If the holes are too large, the small quartz rods 8 can be loosened and swayed, and when the small quartz rods are found to be too late in inclination after material melting, the liquid surface distance cannot be determined.
In the process of re-throwing the raw materials: the small quartz rod may be broken or askew by the repeated feeding, so that the liquid level distance cannot be accurately determined.
In the crucible position setting process, different operators observe that the judgment standards of the contact of the quartz small rod 8 with the silicon solution surface 7 are different, so that the lifting height of the crucible is different, and human errors are caused.
In the crystal pulling process, the liquid surface distance is simulated by the pixel value captured by the CCD, if the CCD lens is moved in the process, the view brightness change is blocked by the oxide of the observation window, the pixel value correction and the like can possibly cause larger difference between the actual liquid surface distance and the liquid surface distance simulated by the pixel value in the single crystal growth process.
Disclosure of Invention
In view of the above, the present invention provides a method for controlling the surface distance of a Czochralski single crystal liquid, so as to solve the above or other problems in the prior art.
In order to solve the technical problems, the invention adopts the following technical scheme: a method for controlling the surface distance of Czochralski crystal liquid comprises,
when entering a temperature stabilizing process, adjusting the liquid level detection device to a preset liquid level distance;
and (3) detecting the surface position of the silicon solution: judging whether the liquid level detection device is in contact with the liquid level of the silicon solution, if so, controlling the crucible to descend, and otherwise, controlling the crucible to ascend;
repeating the steps until the furnace stopping process, and stopping the liquid surface distance control.
Further, in the step of detecting the surface position of the silicon solution, the crucible is moved according to a set distance and a set speed, the crucible is controlled to ascend or descend, the set distance is 0.1-1mm, and the set speed is 0.1-1mm/min.
Further, the detection of the surface position of the silicon solution is carried out every first time period, and the first time period is 1-2min.
Further, in the step of detecting the surface position of the silicon solution, the crucible-to-heel ratio is controlled according to a set proportion, the crucible is controlled to ascend or descend, and the set proportion is 0.1-0.4.
Further, the detection of the surface position of the silicon solution is carried out every second time period, and the second time period is 10-15min.
Furthermore, zero correction is carried out on the liquid level detection device before crystal pulling.
Further, the zero position of the liquid level detection device is the position where the liquid level detection device is flush with the lower edge of the outer guide cylinder.
Further, the detection end of the liquid level detection device extends into the single crystal furnace and extends to the lower edge of the inner guide cylinder.
Further, the liquid level detection device is a liquid level probe.
Further, the position of the liquid level detection device is detected by a position detection device, and the position detection device is a position sensor.
According to the technical scheme, the device for controlling the liquid surface distance of the Czochralski single crystal is adopted to control the liquid surface distance in the Czochralski single crystal process, the preset liquid surface distance height is set, the distance of the liquid level detection device is moved according to the preset liquid surface distance height, then the crucible is controlled to ascend or descend according to whether the liquid level detection device is in contact with the surface of the silicon solution, so that the actual liquid surface distance is matched with the preset liquid surface distance, the relation between the actual liquid surface distance and the preset liquid surface distance is regulated in real time in the crystal pulling process, the actual liquid surface distance and the preset liquid surface distance are kept in dynamic balance, the actual liquid surface distance meets the crystal pulling process requirement, the liquid surface distance is accurately controlled according to the process requirement, and the requirement of the Czochralski single crystal, especially the IC-level semiconductor single crystal on the temperature gradient is ensured; the liquid level detection device is arranged along the inner side wall surface of the inner guide cylinder, and cannot interfere with the single crystal re-casting action, so that the problems of initial crucible position deviation caused by the fact that a quartz small rod is askew or the raw material is broken during re-casting when the single crystal is pulled by the Czochralski single crystal furnace, or liquid level distance deviation caused by unreasonable crucible heel ratio arrangement or liquid level pixel value deviation during the crystal pulling process are effectively solved;
the problems of changing V/G, inducing the generation of defects such as vortex, OISF and the like and even breaking bracts caused by temperature gradient change due to inconsistent liquid level distance and technological requirements can be avoided; the quality problems of resistivity deviation, RRV, ORG deterioration and the like caused by air flow change due to inconsistent liquid level distance and process requirements can be avoided; the risk of breaking the buds caused by the fact that the small quartz rod is broken and falls into the silicon solution in the re-casting process and impurities are introduced can be avoided;
the device for controlling the vertical pulling single crystal liquid surface distance is simple in structure, easy to realize and high in accuracy, compared with the situation that two persons are required to cooperate, a person observes the contact condition of the quartz small rod and the liquid surface by naked eyes, and controls the crucible to lift by one person.
Drawings
FIG. 1 is a schematic view showing the structure of an apparatus for controlling the liquid surface distance of a Czochralski crystal according to an embodiment of the present invention;
FIG. 2 is a flow chart of the control of liquid level distance according to an embodiment of the present invention;
fig. 3 is a schematic view of a structure of a liquid level distance measuring device in the prior art.
In the figure:
1. a liquid level detection device; 2. a position detecting device; 3. a driving device; 4. a furnace cover of the single crystal furnace; 5. an inner guide shell; 6. an outer guide shell; 7. a silicon solution surface; 8. a quartz stick; 9. and a crucible.
Detailed Description
The invention will be further described with reference to the drawings and the specific examples.
Fig. 1 shows a schematic structure of an embodiment of the present invention, which relates to a method for controlling the liquid surface distance of a czochralski single crystal, and is used for controlling the liquid surface distance in the process of czochralski single crystal, automatically controlling and adjusting the liquid surface distance in the process of crystal pulling, ensuring that the liquid surface distance is accurately controlled according to the process requirement, and ensuring the strict requirement of the czochralski single crystal, especially the IC-level semiconductor single crystal, on the temperature gradient.
Liquid surface distance refers to the distance from the lower edge of the guide cylinder to the surface of the silicon solution, and liquid surface distance control refers to the distance from the lower edge of the guide cylinder to the surface of the silicon solution.
The influence of the liquid surface distance on the Czochralski single crystal is as follows: if the liquid level distance is uncontrollable during the growth process, the temperature gradient of the single crystal growth will change, which affects the quality of the single crystal, such as OISF, SW and other defects, or causes the single crystal to break. Meanwhile, the liquid surface distance also influences quality parameters such as oxygen content, RRV, ORG, resistivity and the like of the single crystal. Therefore, accurate control of the liquid level is important in the growth process of Czochralski single crystals.
An apparatus for controlling the surface distance of a Czochralski crystal liquid, as shown in FIG. 1, comprises,
the liquid level detection device 1 is used for contacting with the silicon solution, the liquid level detection device 1 contacts with the silicon solution surface 7, the liquid level detection device 1 generates potential change, whether the liquid level detection device 1 contacts with the silicon solution can be judged, and the position of the silicon solution surface 7 is detected;
the driving device 3 is connected with the liquid level detection device 1, drives the liquid level detection device 1 to move, adjusts the position of the detection end of the liquid level detection device 1, and can control the position of the detection end of the liquid level detection device 1 according to actual requirements;
the control unit is connected with the driving device 3 and the crucible lifting structure, controls the driving device 3 to act, receives the signal of the liquid level detection device 1, controls the crucible lifting structure to act according to whether the liquid level detection device 1 is in contact with the silicon solution surface 7 or not, and enables the crucible 9 to ascend or descend so as to adjust the distance between the lower edge of the outer guide cylinder 6 and the silicon solution surface 7, namely, adjusts the liquid surface distance according to whether the liquid level detection device 1 is in contact with the silicon solution surface 7 or not, so that the liquid surface distance meets the crystal pulling process requirement.
The driving device 3 is disposed on the single crystal furnace cover 4 and is fixedly mounted on the outer surface of the single crystal furnace cover 4, in this embodiment, preferably, the driving device 3 is a servo motor, the servo motor can be fixedly mounted on the single crystal furnace cover 4 through a mounting seat, and the servo motor is a commercially available product and is selected according to actual requirements, and specific requirements are not made here. The control unit can control the descending distance of the liquid level detection device 1 according to the related parameters such as the rotating speed of the servo motor and the diameter of the output shaft.
The liquid level detection device 1 is electrically connected with the control unit, detection signals are transmitted to the control unit, the liquid level detection device 1 is connected with the driving device 3, the detection end of the liquid level detection device 1 penetrates through the through hole of the single crystal furnace cover 4 to enter the single crystal furnace, sealing treatment is carried out on the position of the through hole of the liquid level detection device 1 and the single crystal furnace cover 4, the liquid level detection device 1 is arranged along the axis direction of the inner guide cylinder 5, extends along the direction of the inner side surface of the inner guide cylinder 5 and extends out the lower edge of the inner guide cylinder 5, so that the detection end of the liquid level detection device 1 can be in contact with the liquid level of the silicon solution, the detection end of the liquid level detection device 1 can be lifted or lowered through rotation of the driving device 3, position adjustment is carried out on the detection end of the liquid level detection device 1, and the distance between the detection end of the liquid level detection device 1 and the surface 7 of the silicon solution is adjusted to control the liquid surface distance.
In this embodiment, the liquid level detecting device 1 is preferably a liquid level probe.
The device for controlling the vertical pulling single crystal liquid surface distance further comprises a position detection device 2 which is connected with the control unit, detects the position of the liquid level detection device 1 and transmits detection signals to the control unit, the control unit controls the driving device 3 to act according to the received detection signals, and controls the moving distance of the liquid level detection device 1 so that the moving distance of the liquid level detection device 1 is equal to the preset liquid surface distance height, and the position detection device 2 is arranged, so that the moving distance of the liquid level detection device 1 is controlled more accurately.
The above-mentioned position detecting device 2 is installed on the outer surface of the furnace lid 4 of the single crystal furnace, and detects the distance moved by the liquid level detecting device 1, in this embodiment, preferably, the position detecting device 2 is a position sensor, and is a commercially available product, and is selected according to the actual requirement, where no specific requirement is made.
The control unit is preferably a PLC controller.
When the device for controlling the vertical pulling single crystal liquid surface distance is used, a driving device 3 is arranged on a single crystal furnace cover 4, a position detection device 2 is arranged on the single crystal furnace cover 4, a liquid level detection device 1 is connected with the driving device 3, and the detection end of the liquid level detection device 1 extends into the single crystal furnace and extends to the lower edge (small diameter port of an inner guide cylinder 5) of the inner guide cylinder 5 along the inner guide cylinder 5;
before crystal pulling, zero correction is carried out on the liquid level detection device 1, and the driving device 3 drives the liquid level detection device 1 to move so that the detection end of the liquid level detection device 1 is level with the lower edge of the outer guide cylinder 6;
after the crystal pulling process is carried out, the liquid level distance is controlled, the control unit controls the driving device 3 to act, the driving device 3 drives the liquid level detection device 1 to move towards the direction of the silicon solution surface 7 by a preset liquid level distance height, in the moving process of the liquid level detection device 1, the position detection device 2 detects the moving position of the liquid level detection device 1, when the moving distance of the liquid level detection device 1 reaches the preset liquid level distance height, the control unit controls the driving device 3 to stop acting, and according to whether the liquid level detection device 1 is in contact with the silicon solution surface 7 or not, the control unit controls the crucible lifting structure to ascend or descend, the liquid level distance is adjusted, so that the liquid level distance meets the process requirement, and the requirement of a Czochralski single crystal on the temperature gradient is ensured.
A method for controlling the liquid surface distance of a Czochralski single crystal, which adopts the device for controlling the liquid surface distance of the Czochralski single crystal to control the liquid surface distance, can ensure that the actual liquid surface distance is consistent with the liquid surface distance required by the process in the whole crystal pulling process, and produces the single crystal meeting the process requirement, as shown in figure 2,
before crystal pulling, zero correction is performed on the liquid level detection device 1 so as to ensure that the moving distance of the liquid level detection device 1 is accurate when the position of the subsequent liquid level detection device 1 is regulated, wherein the zero position of the liquid level detection device 1 is the position of the liquid level detection device 1 which is parallel to the lower edge of the outer guide cylinder 6. When zero correction of the liquid level detection device 1 is performed, the control unit controls the driving device 3 to act according to the position of the liquid level detection device 1 before the furnace is opened, so as to drive the liquid level detection device 1 to ascend or descend, for example: before the furnace is opened, the detection end of the liquid level detection device 1 is positioned above the lower edge of the outer guide cylinder 6, the driving device 3 acts to drive the liquid level detection device 1 to move downwards, if the detection end of the liquid level detection device 1 is positioned below the lower edge of the outer guide cylinder 6, the driving device 3 acts to drive the liquid level detection device 1 to move upwards, the detection end of the liquid level detection device 1 moves to a position flush with the lower edge of the outer guide cylinder 6, the driving device 3 stops acting, and the control unit records that the position is the zero position of the liquid level detection device 1.
When the liquid level detection device 1 carries out zero correction, an operator can manually adjust the liquid level detection device or automatically adjust the liquid level detection device, the liquid level detection device is set according to actual requirements, and specific requirements are not required here.
After zero correction, according to the type of pulled single crystal, corresponding pulling technological parameter procedures are selected in a single crystal production process system to pull the single crystal.
When entering the temperature stabilizing procedure, the liquid level detection device 1 is adjusted to preset liquid level distance height: the corresponding crystal pulling processes are different, the crystal pulling processes are different, and the corresponding liquid level distance heights are also different, so that the preset liquid level distance heights are selected and set according to the crystal pulling process requirements, the corresponding theoretical liquid level distance heights are selected as the preset liquid level distance heights, and the preset liquid level distance heights are set in the control unit;
the control unit controls the driving device 3 to act and drive the liquid level detection device 1 to move downwards, the liquid level detection device 1 moves in the process, the position detection device 2 detects the position of the liquid level detection device 1 in real time and transmits detection signals to the control unit, the control unit compares the detected moving distance of the liquid level detection device 1 with the preset liquid level distance height, when the descending distance of the liquid level detection device 1 reaches the preset liquid level distance height, the control unit controls the driving device 3 to stop acting, the liquid level detection device 1 stops descending, at the moment, the distance between the detection end of the liquid level detection device 1 and the silicon solution surface 7 is the preset liquid level distance height, and if the liquid level detection device 1 can always keep the distance to be in contact with the silicon solution surface 7 in the crystal pulling process, the liquid level distance in the crystal pulling process can meet the control requirement of the crystal pulling process, and the requirement of the Czochralski single crystal on the temperature gradient can be ensured.
After the liquid level detection device 1 descends to the preset liquid level distance, judging whether the liquid level detection device 1 is in contact with the silicon solution surface 7, if so, controlling the crucible 9 to descend, and otherwise, controlling the crucible 9 to ascend: when the liquid level detection device 1 is in contact with the silicon solution surface 7, the liquid level detection device 1 generates potential change, the liquid level detection device 1 transmits a detection signal to the control unit, at the moment, the control unit judges that the liquid level detection device 1 is in contact with the silicon solution surface 7, the control unit controls the crucible lifting structure to act, controls the crucible 9 to descend, increases the actual liquid surface distance until the liquid level detection device 1 is separated from the silicon solution surface 7, and controls the crucible lifting structure to stop descending, at the moment, the actual liquid surface distance is matched with the preset liquid surface distance, and meets the requirement of a crystal pulling process, if the liquid level detection device 1 is not in contact with the silicon solution surface 7, no potential change is generated, the liquid level detection device 1 cannot transmit a detection signal to the control unit, at the moment, the control unit judges that the liquid level detection device 1 is not in contact with the silicon solution surface 7, controls the crucible lifting structure to act, controls the crucible 9 to ascend, and reduces the actual liquid surface distance until the liquid level detection device 1 is in contact with the silicon solution surface 7, and the control unit controls the crucible lifting structure to stop ascending action, at the moment, the actual liquid surface distance is matched with the preset liquid surface distance, and meets the requirement of the crystal pulling process, and meets the requirement of a dynamic equilibrium, and the requirement of the crystal pulling process is met;
in the process of single crystal pulling, the liquid surface distance needs to be automatically controlled in real time, so that the actual liquid surface distance and the preset liquid surface distance are in dynamic balance, and the requirement of the crystal pulling process is met, namely detection is carried out at intervals of a certain time period, the crucible lifting structure is controlled to act according to whether the liquid level detection device 1 is in contact with the silicon solution surface 7, the crucible 9 is controlled to ascend or descend, and the actual liquid surface distance and the preset liquid surface distance are controlled to be in dynamic balance, so that the liquid surface distance can be ensured to meet the requirement of the crystal pulling process in the crystal pulling process, and the quality of single crystals is ensured;
when detection is performed at regular intervals, the detection method can be as follows: the crucible 9 is moved at intervals of a first time period, the crucible 9 is controlled to ascend or descend according to a set distance and a set speed, the set distance is 0.1-1mm, the set speed is 0.1-1mm/min, the first time period is 1-2min, and the set distance, the set speed and the first time period are selected and set according to actual requirements, so that specific requirements are not made. If the temperature stabilizing process is carried out, the liquid level distance detection is carried out, when the detection is carried out, whether the liquid level detection device 1 is in contact with the silicon solution surface 7 is judged, if yes, the crucible 9 is controlled to descend, otherwise, the crucible 9 is controlled to ascend, when the crucible 9 is controlled to ascend or descend, the ascending or descending speed of the crucible 9 is 0.5mm/min, the ascending or descending moving distance of the crucible 9 is 0.5mm, after the crucible 9 is ascended or descended, the control unit judges whether the liquid level detection device 1 is in contact with the silicon solution surface 7 again, and the steps are repeated until the liquid level detection device 1 is separated from the silicon solution surface 7; after 1min, detecting the liquid level distance again, and repeating the steps; after 1min, detecting the liquid level distance again, and repeating the steps; … …; in the crystal pulling process, the liquid level distance is detected in real time, so that the actual liquid level distance and the preset liquid level distance are kept in dynamic balance, and the actual liquid level distance meets the crystal pulling process requirement.
Alternatively, when the detection is performed at regular intervals, it may be: every second time period, the crucible-to-heel ratio is controlled according to the set proportion, the crucible 9 is controlled to ascend or descend, the set proportion is 0.1-0.4, the second time period is 10-15min, the set proportion and the second time period are selected and set according to actual requirements, and specific requirements are not made here. If the temperature stabilizing process is carried out, the liquid level distance detection is carried out, and when the detection is carried out, whether the liquid level detection device 1 is in contact with the silicon solution surface 7 is judged, if yes, the crucible 9 is controlled to descend, otherwise, the crucible 9 is controlled to ascend, when the crucible 9 is controlled to ascend or descend, the crucible-to-crucible ratio is reduced or enlarged according to a set proportion, if the set proportion is 0.3, the ascending or descending speed of the crucible 9 is controlled until the liquid level detection device 1 is separated from the silicon solution surface 7; after 10min, detecting the liquid level distance again, and repeating the steps; after 10min, detecting the liquid level distance again, and repeating the steps; … …; in the crystal pulling process, the liquid level distance is detected in real time, so that the actual liquid level distance and the preset liquid level distance are kept in dynamic balance, and the actual liquid level distance meets the crystal pulling process requirement.
And repeating the steps until the furnace stopping process and stopping the liquid surface distance control, wherein in the crystal pulling process, the steps of controlling the crucible 9 to ascend or descend according to whether the liquid level detection device 1 is in contact with the silicon solution surface 7 are always kept and repeated, and the relation between the actual liquid surface distance and the preset liquid surface distance is adjusted, so that the actual liquid surface distance and the preset liquid surface distance are kept in dynamic balance, the actual liquid surface distance is adjusted in real time until the furnace stopping process and stopping the liquid surface distance adjustment, the actual liquid surface distance meets the requirement of the crystal pulling process in the whole crystal pulling process, and the requirement of the Czochralski single crystal on the temperature gradient in the crystal pulling process is ensured.
According to the technical scheme, the device for controlling the liquid surface distance of the Czochralski single crystal is adopted to control the liquid surface distance in the Czochralski single crystal process, the preset liquid surface distance height is set, the distance of the liquid level detection device is moved according to the preset liquid surface distance height, then the crucible is controlled to ascend or descend according to whether the liquid level detection device is in contact with the surface of the silicon solution, so that the actual liquid surface distance is matched with the preset liquid surface distance, the relation between the actual liquid surface distance and the preset liquid surface distance is regulated in real time in the crystal pulling process, the actual liquid surface distance and the preset liquid surface distance are kept in dynamic balance, the actual liquid surface distance meets the crystal pulling process requirement, the liquid surface distance is accurately controlled according to the process requirement, and the requirement of the Czochralski single crystal, especially the IC-level semiconductor single crystal on the temperature gradient is ensured; the liquid level detection device is arranged along the inner side wall surface of the inner guide cylinder, and cannot interfere with the single crystal re-casting action, so that the problems of initial crucible position deviation caused by the fact that a quartz small rod is askew or the raw material is broken during re-casting when the single crystal is pulled by the Czochralski single crystal furnace, or liquid level distance deviation caused by unreasonable crucible heel ratio arrangement or liquid level pixel value deviation during the crystal pulling process are effectively solved;
the problems of changing V/G, inducing the generation of defects such as vortex, OISF and the like and even breaking bracts caused by temperature gradient change due to inconsistent liquid level distance and technological requirements can be avoided; the quality problems of resistivity deviation, RRV, ORG deterioration and the like caused by air flow change due to inconsistent liquid level distance and process requirements can be avoided; the risk of breaking the buds caused by the fact that the small quartz rod is broken and falls into the silicon solution in the re-casting process and impurities are introduced can be avoided;
the device for controlling the vertical pulling single crystal liquid surface distance is simple in structure, easy to realize and high in accuracy, compared with the situation that two persons are required to cooperate, a person observes the contact condition of the quartz small rod and the liquid surface by naked eyes, and controls the crucible to lift by one person.
The foregoing describes the embodiments of the present invention in detail, but the description is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the invention. All equivalent changes and modifications within the scope of the present invention are intended to be covered by the present invention.
Claims (10)
1. A method for controlling the surface distance of a Czochralski crystal liquid is characterized in that: comprising the steps of (a) a step of,
when entering a temperature stabilizing process, adjusting the liquid level detection device to a preset liquid level distance;
and (3) detecting the surface position of the silicon solution: judging whether the liquid level detection device is in contact with the liquid level of the silicon solution, if so, controlling the crucible to descend, otherwise, controlling the crucible to ascend;
repeating the steps until the furnace stopping process, and stopping the liquid surface distance control.
2. The method for controlling the face distance of a Czochralski single crystal liquid according to claim 1, wherein: in the step of detecting the surface position of the silicon solution, the crucible is moved according to a set distance and a set speed, the crucible is controlled to ascend or descend, the set distance is 0.1-1mm, and the set speed is 0.1-1mm/min.
3. The method for controlling the face distance of a Czochralski single crystal liquid according to claim 2, wherein: and detecting the surface position of the silicon solution once every first time period, wherein the first time period is 1-2min.
4. The method for controlling the face distance of a Czochralski single crystal liquid according to claim 1, wherein: in the step of detecting the surface position of the silicon solution, the crucible-to-heel ratio is controlled according to a set proportion, and the crucible is controlled to ascend or descend, wherein the set proportion is 0.1-0.4.
5. The method for controlling the face distance of a Czochralski single crystal of claim 4, wherein: and detecting the surface position of the silicon solution once every second time period, wherein the second time period is 10-15min.
6. The method for controlling the face distance of a Czochralski single crystal liquid according to any one of claims 1 to 5, wherein: and before crystal pulling, zero correction is carried out on the liquid level detection device.
7. The method for controlling the face distance of a Czochralski single crystal of claim 6, wherein: the zero position of the liquid level detection device is the position where the liquid level detection device is flush with the lower edge of the outer guide cylinder.
8. The method for controlling the face distance of a Czochralski single crystal liquid according to claim 1, wherein: the detection end of the liquid level detection device extends into the single crystal furnace and extends to the lower edge of the inner guide cylinder.
9. The method for controlling the face distance of a Czochralski single crystal of claim 8, wherein: the liquid level detection device is a liquid level probe.
10. The method for controlling the liquid surface distance of a Czochralski crystal according to claim 8 or 9, wherein: the position of the liquid level detection device is detected by the position detection device, and the position detection device is a position sensor.
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