CN102990081B - 单分散、尺寸均一的贵金属纳米球的制备方法 - Google Patents
单分散、尺寸均一的贵金属纳米球的制备方法 Download PDFInfo
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- CN102990081B CN102990081B CN201210535818.4A CN201210535818A CN102990081B CN 102990081 B CN102990081 B CN 102990081B CN 201210535818 A CN201210535818 A CN 201210535818A CN 102990081 B CN102990081 B CN 102990081B
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CN104588678A (zh) * | 2015-01-09 | 2015-05-06 | 中国科学院合肥物质科学研究院 | 金-银复合纳米环的制备方法 |
CN105458247B (zh) * | 2015-11-26 | 2017-09-19 | 中国科学院合肥物质科学研究院 | 金‑氧化锡核壳结构复合纳米材料及其制备方法 |
CN109238974A (zh) * | 2018-08-30 | 2019-01-18 | 南京理工大学 | 一种日盲型深紫外等离子体共振纳米颗粒的制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1251326A (zh) * | 1999-10-20 | 2000-04-26 | 中山大学 | 制备纳米贵金属微粒的方法 |
CN1411936A (zh) * | 2001-10-09 | 2003-04-23 | 黑龙江省光电技术研究所 | 液相介质中紫外激光制备纳米粉的方法 |
CN101462774A (zh) * | 2007-12-18 | 2009-06-24 | 中国科学院合肥物质科学研究院 | 纳米氧化亚铁胶体及其制备方法 |
CN101734715A (zh) * | 2008-11-10 | 2010-06-16 | 南通大学 | 金红石相纳米二氧化钛颗粒的制备方法 |
CN101774023A (zh) * | 2010-02-26 | 2010-07-14 | 中山大学 | 一种利用脉冲激光在液相环境中烧蚀制备单分散贵金属纳米颗粒的方法 |
CN102717083A (zh) * | 2012-05-28 | 2012-10-10 | 天津大学 | 激光制备金属镉纳米颗粒的方法 |
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CN101381093A (zh) * | 2008-10-15 | 2009-03-11 | 东华大学 | 分步法稀土掺杂氟化物LnF3:Re3+纳米发光颗粒的制备 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1251326A (zh) * | 1999-10-20 | 2000-04-26 | 中山大学 | 制备纳米贵金属微粒的方法 |
CN1411936A (zh) * | 2001-10-09 | 2003-04-23 | 黑龙江省光电技术研究所 | 液相介质中紫外激光制备纳米粉的方法 |
CN101462774A (zh) * | 2007-12-18 | 2009-06-24 | 中国科学院合肥物质科学研究院 | 纳米氧化亚铁胶体及其制备方法 |
CN101734715A (zh) * | 2008-11-10 | 2010-06-16 | 南通大学 | 金红石相纳米二氧化钛颗粒的制备方法 |
CN101774023A (zh) * | 2010-02-26 | 2010-07-14 | 中山大学 | 一种利用脉冲激光在液相环境中烧蚀制备单分散贵金属纳米颗粒的方法 |
CN102717083A (zh) * | 2012-05-28 | 2012-10-10 | 天津大学 | 激光制备金属镉纳米颗粒的方法 |
Non-Patent Citations (1)
Title |
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液相脉冲激光烧蚀法制备高熔点的纳米金属粒子;余乐,姚佳,傅正文;《物理化学学报》;20070630;第23卷(第6期);第946页左栏第1行-第949页左栏倒数第1段 * |
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Effective date of registration: 20181022 Address after: 230088 12, Hefei Innovation Institute, 2666, Xi you road, Hefei hi tech Zone, Anhui. Patentee after: CAS (HEFEI) INSTITUTE OF TECHNOLOGY INNOVATION Address before: 230031 Shushan Lake Road, Shushan District, Hefei, Anhui 350 Patentee before: HEFEI INSTITUTES OF PHYSICAL SCIENCE, CHINESE ACADEMY OF SCIENCES |
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Address after: 230088 12, Hefei Innovation Institute, 2666, Xi you road, Hefei hi tech Zone, Anhui. Patentee after: Hefei Institute of Technology Innovation Engineering Address before: 230088 12, Hefei Innovation Institute, 2666, Xi you road, Hefei hi tech Zone, Anhui. Patentee before: CAS (HEFEI) INSTITUTE OF TECHNOLOGY INNOVATION |
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Effective date of registration: 20221103 Address after: Room 413/414, R&D Building, Hefei Institute of Technological Innovation, Chinese Academy of Sciences, northwest corner of the intersection of Xiyou Road and Shilian South Road, Hefei Hi tech Zone, 230000, Anhui Province Patentee after: Hefei Zhongkenap New Materials Co.,Ltd. Address before: 230088 12, Hefei Innovation Institute, 2666, Xi you road, Hefei hi tech Zone, Anhui. Patentee before: Hefei Institute of Technology Innovation Engineering |