CN102983232B - The manufacture method of vertical type light emitting diode - Google Patents
The manufacture method of vertical type light emitting diode Download PDFInfo
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- CN102983232B CN102983232B CN201210436414.XA CN201210436414A CN102983232B CN 102983232 B CN102983232 B CN 102983232B CN 201210436414 A CN201210436414 A CN 201210436414A CN 102983232 B CN102983232 B CN 102983232B
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Abstract
The invention discloses a kind of manufacture method of vertical type light emitting diode, by the vertical type light emitting diode that manufacture method of the present invention is obtained, its upper surface, lower surface and all sides all form surface coarsening layer, and this vertical type light emitting diode also has the reflector of two row's side-by-side parallel, while this structure can increase substantially luminous efficiency, the uniformity of luminance of light-emitting diode can also be improved further.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of manufacture method of light-emitting diode of vertical-type.
Background technology
Semiconductor light-emitting-diode application is increasingly extensive, and in illumination, particularly have the trend replacing incandescent lamp and fluorescent lamp, but also face some technical problems at present, particularly light extraction efficiency is lower.
In recent years, in order to improve luminous power and the efficiency of light-emitting diode, develop the light-emitting diode of vertical stratification, relative to the light-emitting diode of positive assembling structure, the light-emitting diode plurality of advantages of vertical stratification.For the light-emitting diode of positive assembling structure, because n, p-electrode are all in the same side of substrate, therefore electric current must between the n of homonymy, p-type electrode lateral flow, so just cause current crowding, caloric value is high.And two of light emitting diode with vertical structure electrodes are in the both sides of light-emitting diode respectively, electric current almost all flows vertically through epitaxial loayer, does not have the electric current of lateral flow, therefore homogeneous current distribution, and the heat of generation is relatively less.And because two electrodes of vertical stratification are in both sides, therefore go out the stop that can not be subject to same lateral electrode in photoreduction process, its light extraction efficiency is higher.
In the practical work process of light-emitting diode, when light leaves diode inside, in any case it all cannot avoid loss occurs, causing the main cause of loss, is that the semi-conducting material owing to forming LED surface layer has high index of refraction.High optical refractive index can cause light to produce total reflection at this semiconductor material surface, thus the light that LED internal is sent cannot be launched fully.At present, improve the total reflection of light in diode inside by surface texture technology in the industry, thus raising luminous efficiency, but, because prior art usually only carries out roughening treatment to the surface that diode portion is grouped into structure, which results in its roughened surface skewness, therefore cannot effective improving luminous efficiency.
Simultaneously, light-emitting diode send only by its internal structure luminescent layer produce, the light that luminescent layer sends mainly is sent by the front of light-emitting diode, and the light sent from its side must first through the total reflection of LED internal structure, the light path of light is changed could be sent by side.Which results in existing light-emitting diode front bright dipping too much and side bright dipping is not enough, therefore also just cause the uneven of light-emitting diode bright dipping.
Fig. 1 is existing vertical type light emitting diode.In Fig. 1, be formed with transparent metal ohmic contact layer 100 below substrate 101, n-type electrode 111 realizes being electrically connected with this substrate 101 by this transparent metal ohmic contact layer 100.And above substrate 101, form GaN resilient coating 102, n-type GaN layer 103, multiple quantum well light emitting layer (MQW) 104, p-type AlGaN layer 105, p-type GaN layer 106, transparent electrode layer 107, p metal electrode 112 successively; Wherein GaN resilient coating 102 surface is roughened process, to form nano level jagged surface coarsening layer 122.
In the light emitting diode construction shown in Fig. 1, because roughened layer is only formed at the inside of light-emitting diode, on the surface of i.e. GaN resilient coating 102, therefore, although the light produced by multiple quantum well light emitting layer 104 is through the reflection of roughened layer 122, can improve the luminous efficiency of side in certain degree, but this roughened layer be in LED internal is also not enough to improve luminous efficiency further.
And, the light-emitting diode of structure shown in Figure 1, what visible multiple quantum well light emitting layer 104 sent wide is manyly appeared by the front of light-emitting diode, namely appeared by the upper surface of transparent electrode layer 107, only have a small amount of light to be appeared by the side of light-emitting diode after the total reflection of transparent electrode layer 107.Therefore, the uniformity of luminance of the light-emitting diode of structure shown in Fig. 1 need to improve.
Summary of the invention
The present invention is directed to the problem of prior art, propose a kind of manufacture method with the vertical type light emitting diode in coarse surface and reflector, thus improve luminous efficiency and the uniformity of luminance of light-emitting diode.
The manufacture method of the vertical type light emitting diode that the present invention proposes comprises the steps:
(1) on substrate, adopt MOCVD epitaxy growing GaN resilient coating;
(2) utilize the surface of alkaline solution to GaN resilient coating to corrode, thus on GaN buffer-layer surface, form nano level jagged described surface coarsening layer;
(3) on the surface that GaN resilient coating is roughened, adopt MOCVD or molecular beam epitaxy technique (MBE) to form n-type GaN layer, multiple quantum well light emitting layer (MQW), p-type AlGaN layer, p-type GaN layer successively;
(4) at p-type GaN layer spin coating photoresist on the surface, photoetching process is utilized to carry out photoetching to p-type GaN layer surface, to form groove in the both sides of p-type GaN layer;
(5) utilize sputtering process or electron beam evaporation process on the groove of p-type GaN layer both sides, form the first reflector and the second reflector;
(6) chemico-mechanical polishing (CMP) technique is carried out to the p-type GaN layer surface behind sputter first reflector and the second reflector, to make the surface planarisation of the first reflector, the second reflector and p-type GaN layer;
(7) sputtering process is adopted to form transparent electrode layer on the surface in p-type GaN layer;
(8) sputtering process is adopted to form described transparent resistive metal layer at the lower surface of substrate;
(9) vertical type light emitting diode of complete layer stack structure is immersed in alkaline solution, so that by all surface alligatoring of this stepped construction, forms described surface coarsening layer;
(10) form n-type electrode at the lower surface of transparent resistive metal layer, form p-type electrode at the upper surface of transparent electrode layer.
Wherein, the material of substrate is sapphire, carborundum, zinc sulphide or GaAs;
Wherein, surface coarsening layer can also utilize plasma chambers carry out dry etching to the surface of GaN resilient coating or carry out wet etching and then utilize plasma chambers to carry out dry etching having combined by being first immersed in alkaline solution;
Wherein, the material in the first reflector and the second reflector is Al/Ag alloying metal reflector, AlAs/Al
xga
1-xas or AlInP/ (Al
xga
1-x)
yin
1-yp distributed Bragg reflecting layer (DBR).
Accompanying drawing explanation
Accompanying drawing 1 is the light emitting diode construction schematic diagram only having part coarse surface in prior art.
The light emitting diode construction schematic diagram with coarse surface and reflector that accompanying drawing 2 proposes for the present invention.
The planar structure schematic diagram that accompanying drawing 3 is light-emitting diode shown in Fig. 2.
Embodiment
The manufacture method of the vertical type light emitting diode that the present invention proposes, comprises the following steps:
(1) adopt MOCVD epitaxy growing GaN resilient coating 202 on the substrate 201, the material of described substrate is sapphire, carborundum, zinc sulphide or GaAs;
(2) utilize the surface of alkaline solution to GaN resilient coating 202 to corrode, thus form nano level jagged surface coarsening layer 222 on the surface at GaN resilient coating 202; In the present invention, the surface of GaN resilient coating 202 is corroded to be formed except surface coarsening layer 222 except alkaline solution can be utilized, also plasma chambers can being utilized to carry out dry etching to the surface of GaN resilient coating 202 come, wet etching can also being carried out and then utilize plasma chambers to carry out dry etching having combined by being first immersed in alkaline solution.Combine for wet etching and dry etching and form the technique of surface coarsening layer, the present invention does not limit must dry etching after first wet etching, adopts first dry etching to be equally also fine at wet etching;
(3) on the surface that GaN resilient coating 202 is roughened, adopt MOCVD or molecular beam epitaxy technique (MBE) to form n-type GaN layer 203, multiple quantum well light emitting layer (MQW) 204, p-type AlGaN layer 205, p-type GaN layer 206 successively;
(4) at p-type GaN layer 206 spin coating photoresist on the surface, photoetching process is utilized to carry out photoetching to p-type GaN layer 206 surface, to form groove (232 of Fig. 2 and the position of 231) in the both sides of p-type GaN layer 206;
(5) utilize sputtering process or electron beam evaporation process on the groove of p-type GaN layer 206 both sides, form reflector 231 and 232, the material in this reflector 231 and 232 can be Al/Ag alloying metal reflector, also can be AlAs/Al
xga
1-xas or AlInP/ (Al
xga
1-x)
yin
1-yp distributed Bragg reflecting layer (DBR); Overlooked by the top of Fig. 2 and look over, reflector 231 is arranged in the both sides of p-type GaN layer 206 with 232 in two parallel array structures, i.e. dash area as shown in Figure 3;
(6) chemico-mechanical polishing (CMP) technique is carried out to p-type GaN layer 206 surface behind sputter reflector 231 and 232, to make the surface planarisation in reflector 231,232 and p-type GaN layer 206;
(7) sputtering process is adopted to form transparent electrode layer 207 on the surface in p-type GaN layer 206;
(8) sputtering process is adopted to form transparent resistive metal layer 200 in the below of substrate 201;
(9) vertical type light emitting diode of complete layer stack structure is immersed in alkaline solution, so that by all surface alligatoring of this stepped construction, forms surface coarsening layer 221;
(10) form n-type electrode 211 at the lower surface of transparent resistive metal layer 200, form p-type electrode 212 at the upper surface of transparent electrode layer 207; The formation method of electrode 211 and 212 can adopt the technique of this area routine to be formed, such as first spin coating photoresist on the surface of transparent electrode layer 207, expose the surface of the transparent electrode layer 207 that will form electrode 212 after development, after this by sputtering process to form electrode 212; The formation method of electrode 211 is identical therewith.
So far, vertical type light emitting diode 2 is formed by method of the present invention, see Fig. 2, the structure of light-emitting diode 2 comprises:: be formed with transparent resistive metal layer 200 in the below of substrate 201, n-type electrode 211 realizes being electrically connected with this substrate 201 by this transparent metal ohmic contact layer 200.Surface on the substrate 201, it forms GaN resilient coating 202, n-type GaN layer 203, multiple quantum well light emitting layer (MQW) 204, p-type AlGaN layer 205, p-type GaN layer 206, transparent electrode layer 207, p metal electrode 212, surface coarsening layer 221 successively.
After roughening treatment is carried out to the whole outer surface of light-emitting diode 2, the light that multiple quantum well light emitting layer 204 sends is behind each surface arriving light-emitting diode 2, light outside transmission critical angle is due to the repeatedly refraction through surface coarsening layer, finally can enter critical angle interior by each surface transmission out, thus make light-emitting diode 2 send more light, therefore also just improve luminous efficiency.
In addition, manufacture method of the present invention is also provided with reflector further in vertical type light emitting diode 2.This reflector 231 and 232 can be arranged on the upper surface (as shown in Figure 2) of p-type GaN layer 206, also can be arranged on the upper surface (not shown in Fig. 2) of p-type AlGaN layer 205, or the lower surface being arranged on p-type GaN layer 206 or p-type AlGaN layer 205 also can.
See Fig. 2, by arranging reflector 231 and 232, a part for the light sent by multiple quantum well light emitting layer 204 is directly appeared by the front of light-emitting diode 2, and another part is then appeared by the side of light-emitting diode 2 after the reflection in reflector 231 and 232.Owing to there being the existence in reflector 231 and 232, the light that so can arrive light-emitting diode 2 front is just restricted to the part in Fig. 2 between reflector 231 and 232, and the light reflected by reflector 231 and 232 can only appear from the side of light-emitting diode 2, therefore, this design just can improve the uniformity of luminance of light-emitting diode front and side.
Fig. 3 is the floor map of Fig. 2, is namely overlooked by the top of Fig. 2 and the schematic diagram obtained.See Fig. 3, reflector 231 and 232 is two parallel array structures, a part for the light that the multiple quantum well light emitting layer 204 of light-emitting diode 2 sends is appeared by the region 300 in Fig. 3, and another part light appears from the side of light-emitting diode due to the reflection in reflector 232 and 231.
So far, foregoing description has specifically understood the manufacture method of vertical type light emitting diode of the present invention, while the vertical type light emitting diode manufactured by method of the present invention can increase substantially luminous efficiency, the uniformity of luminance of light-emitting diode can also be improved further.The embodiment of description is above only the preferred embodiments of the present invention, and it is not intended to limit the present invention.Those skilled in the art, under the prerequisite not departing from spirit of the present invention, can make any amendment, and protection scope of the present invention are limited to the appended claims to the present invention.
Claims (3)
1. a manufacture method for vertical type light emitting diode, comprises the following steps successively:
(1) on zinc sulphide or gallium arsenide substrate, MOCVD epitaxy growing GaN resilient coating is adopted;
(2) utilize the surface of alkaline solution to GaN resilient coating to corrode, thus on GaN buffer-layer surface, form nano level jagged first surface roughened layer;
(3) on the surface that GaN resilient coating is roughened, adopt MOCVD or molecular beam epitaxy technique (MBE) to form n-type GaN layer, multiple quantum well light emitting layer (MQW), p-type AlGaN layer, p-type GaN layer successively;
(4) at p-type GaN layer spin coating photoresist on the surface, photoetching process is utilized to carry out photoetching to p-type GaN layer surface, to form groove in the both sides of p-type GaN layer;
(5) utilize sputtering process or electron beam evaporation process on the groove of p-type GaN layer both sides, form the first reflector and the second reflector;
(6) chemico-mechanical polishing (CMP) technique is carried out to the p-type GaN layer surface behind sputter first reflector and the second reflector, to make the surface planarisation of the first reflector, the second reflector and p-type GaN layer;
(7) on the surface in p-type GaN layer, the first reflector and the second reflector, sputtering process is adopted to form transparent electrode layer;
(8) sputtering process is adopted to form transparent resistive metal layer at the lower surface of substrate;
(9) vertical type light emitting diode of complete layer stack structure is immersed in alkaline solution, so that by all surface alligatoring of this stepped construction, forms second surface roughened layer;
(10) form n-type electrode at the lower surface of transparent resistive metal layer, form p-type electrode at the upper surface of transparent electrode layer.
2. the manufacture method of vertical type light emitting diode as claimed in claim 1, is characterized in that:
Described first surface roughened layer can also utilize plasma chambers carry out dry etching to the surface of GaN resilient coating or carry out wet etching and then utilize plasma chambers to carry out dry etching having combined by being first immersed in alkaline solution.
3. the manufacture method of vertical type light emitting diode as claimed in claim 2, is characterized in that:
The material in described first reflector and described second reflector is Al/Ag alloying metal reflector, AlAs/Al
xga
1-xas or AlInP/ (Al
xga
1-x)
yin
1yp distributed Bragg reflecting layer (DBR).
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|---|---|---|---|
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| CN102983232B true CN102983232B (en) | 2016-04-13 |
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| WO2021134571A1 (en) * | 2019-12-31 | 2021-07-08 | 重庆康佳光电技术研究院有限公司 | Micro light-emitting diode chip and manufacturing method therefor, and display device |
| CN111200046B (en) * | 2020-01-13 | 2022-06-03 | 广东省半导体产业技术研究院 | LED chip structure and manufacturing method thereof |
| CN113328013A (en) * | 2020-02-28 | 2021-08-31 | 山东浪潮华光光电子股份有限公司 | Preparation method of high-brightness infrared light emitting diode core and diode core |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629653A (en) * | 2011-02-07 | 2012-08-08 | 晶元光电股份有限公司 | Light-emitting element and the manufacturing method thereof |
| CN102709420A (en) * | 2012-06-21 | 2012-10-03 | 安徽三安光电有限公司 | GaN-based LED |
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| JP3881472B2 (en) * | 1999-04-15 | 2007-02-14 | ローム株式会社 | Manufacturing method of semiconductor light emitting device |
| JP4957130B2 (en) * | 2006-09-06 | 2012-06-20 | 日立電線株式会社 | Light emitting diode |
| JP2009021346A (en) * | 2007-07-11 | 2009-01-29 | Rohm Co Ltd | Semiconductor light-emitting element |
| KR20120073745A (en) * | 2010-12-27 | 2012-07-05 | 일진머티리얼즈 주식회사 | Gan based light emitting device with excellent light efficiency and crystal quality and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102629653A (en) * | 2011-02-07 | 2012-08-08 | 晶元光电股份有限公司 | Light-emitting element and the manufacturing method thereof |
| CN102709420A (en) * | 2012-06-21 | 2012-10-03 | 安徽三安光电有限公司 | GaN-based LED |
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