CN102983233B - The manufacture method of gallium nitride based light emitting diode - Google Patents
The manufacture method of gallium nitride based light emitting diode Download PDFInfo
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- CN102983233B CN102983233B CN201210437522.9A CN201210437522A CN102983233B CN 102983233 B CN102983233 B CN 102983233B CN 201210437522 A CN201210437522 A CN 201210437522A CN 102983233 B CN102983233 B CN 102983233B
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Abstract
The present invention proposes a kind of manufacture method of gallium nitride based light emitting diode, it is ledge structure, has substrate, and the lower surface of described substrate is formed with metallic reflector; The upper surface of described substrate is formed with successively GaN resilient coating, n-type GaN layer, multiple quantum well light emitting layer (MQW), p-type AlGaN layer, p-type GaN layer, transparent electrode layer, p metal electrode; Described n-type GaN layer is formed n metal electrode; The surface of described GaN resilient coating is roughened process rear formation first surface roughened layer; The upper surface of described light-emitting diode, all sides form second surface roughened layer.Wherein, the upper surface of described p-type GaN layer is formed with the parallel reflector of two rows.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of manufacture method of gallium nitride based light emitting diode.
Background technology
Semiconductor light-emitting-diode application is increasingly extensive, in illumination, particularly there is the trend replacing incandescent lamp and fluorescent lamp, but also face some technical problems at present, particularly light extraction efficiency is lower, usually, affect the reason that light extraction efficiency mainly contains three aspects: a kind of is because material is to the absorption of light, another kind is light producing total reflection through during different medium.
The raising of light-emitting diode luminous efficiency is pursuing a goal of technology always, and improve the quality of epitaxial material, by transparent substrates bonding, thick current expansion window, these all play good effect to the raising of efficiency.But when light leaves diode inside, in any case it all cannot avoid loss occurs, causing the main cause of loss, is that the semi-conducting material owing to forming LED surface layer has high index of refraction.High optical refractive index can cause light to produce total reflection at this semiconductor material surface, thus the light that LED internal is sent cannot be launched fully.At present, improve the total reflection of light in diode inside by surface texture technology in the industry, thus raising luminous efficiency, but, because prior art usually only carries out roughening treatment to the surface that diode portion is grouped into structure, which results in its roughened surface skewness, therefore cannot effective improving luminous efficiency.
Simultaneously, light-emitting diode send only by its internal structure luminescent layer produce, the light that luminescent layer sends mainly is sent by the front of light-emitting diode, and the light sent from its side must first through the total reflection of LED internal structure, the light path of light is changed could be sent by side.Which results in existing light-emitting diode front bright dipping too much and side bright dipping is not enough, therefore also just cause the uneven of light-emitting diode bright dipping.
Fig. 1 is existing light emitting diode construction.In Fig. 1, substrate 101 is formed successively GaN resilient coating 102, n-type GaN layer 103, multiple quantum well light emitting layer (MQW) 104, p-type AlGaN layer 105, p-type GaN layer 106, transparent electrode layer 107, p metal electrode 112; And n-type GaN layer 103 forms n metal electrode 111.Wherein GaN resilient coating 102 surface is roughened process, to form nano level jagged surface coarsening layer 122.Also be formed with metallic reflector 100 below substrate 101, thus multiple quantum well light emitting layer 104 sends light after the reflection of metallic reflector 100, appears (not shown in figure 1) by the front of light-emitting diode or side, to improve luminous efficiency.
In the light emitting diode construction shown in Fig. 1, because roughened layer is only formed at the inside of light-emitting diode, on the surface of i.e. GaN resilient coating 102, therefore, although the light produced by multiple quantum well light emitting layer 104 is through the reflection of roughened layer 122, can improve the luminous efficiency of side in certain degree, but this roughened layer be in LED internal is also not enough to improve luminous efficiency further.
And, the light-emitting diode of structure shown in Figure 1, what visible multiple quantum well light emitting layer 104 sent wide is manyly appeared by the front of light-emitting diode, namely appeared by the upper surface of transparent electrode layer 107, only have a small amount of light to be appeared by the side of light-emitting diode after the total reflection of transparent electrode layer 107.Therefore, the uniformity of luminance of the light-emitting diode of structure shown in Fig. 1 need to improve.
Summary of the invention
The present invention is directed to the problem of prior art, propose a kind of manufacture method with the gallium nitride based light emitting diode in coarse surface and reflector, by the gallium nitride based light emitting diode that manufacture method of the present invention obtains, it has luminous efficiency and the uniformity of luminance of raising.
The manufacture method of the gallium nitride based light emitting diode that the present invention proposes comprises the following steps:
(1) on substrate, adopt MOCVD epitaxy growing GaN resilient coating, the material of described substrate is sapphire, carborundum, zinc sulphide or GaAs;
(2) utilize the surface of alkaline solution to GaN resilient coating to corrode, thus form surface coarsening layer on GaN buffer-layer surface;
(3) on the surface that GaN resilient coating is roughened, adopt MOCVD or molecular beam epitaxy technique (MBE) to form the stepped construction of n-type GaN layer, multiple quantum well light emitting layer (MQW), p-type AlGaN layer and p-type GaN layer successively;
(4) at the surperficial spin coating photoresist of p-type GaN layer, expose its part surface after development, after this using plasma carries out dry etching to above-mentioned stepped construction, till the part etching into n-type GaN layer; Be preferably 1/2 to 2/3 of the thickness retaining n-type GaN layer;
(5) groove is formed respectively in the both sides on p-type GaN layer surface;
(6) adopt sputtering process or electron beam evaporation process on the groove of p-type GaN layer both sides, form the first reflector and the second reflector;
(7) chemico-mechanical polishing (CMP) technique is carried out to the p-type GaN layer surface behind sputter first reflector and the second reflector, to make the surface planarisation of the first reflector, the second reflector and p-type GaN layer;
(8) sputtering process is adopted to form transparent electrode layer on the surface in p-type GaN layer;
(9) gallium nitride based light emitting diode completing ledge structure is immersed in alkaline solution, to form surface coarsening layer;
(10) carry out thinning to substrate, preferably remove 1/2 to 2/3 of the thickness of substrate; After this adopt sputtering process to form metallic reflector in the below of substrate;
(11) form n-type electrode at the ledge surface of n-type GaN layer, form p-type electrode at the upper surface of transparent electrode layer;
Wherein, the material in described first reflector and the second reflector can be Al/Ag alloying metal reflector, also can be AlAs/Al
xga
1-xas or AlInP/ (Al
xga
1-x)
yin
1-yp distributed Bragg reflecting layer (DBR); First reflector and the second reflector are two parallel array structures and are arranged in the both sides of p-type GaN layer;
Wherein, described surface coarsening layer is nanoscale zigzag roughened layer.
Accompanying drawing explanation
Accompanying drawing 1 is the light emitting diode construction schematic diagram only having part coarse surface in prior art.
The light emitting diode construction schematic diagram with coarse surface and reflector that accompanying drawing 2 proposes for the present invention.
The planar structure schematic diagram that accompanying drawing 3 is light-emitting diode shown in Fig. 2.
Embodiment
The manufacture method of the gallium nitride based light emitting diode that the present invention proposes comprises the following steps:
(1) adopt MOCVD epitaxy growing GaN resilient coating 202 on the substrate 201, the material of described substrate is sapphire, carborundum, zinc sulphide or GaAs;
(2) utilize the surface of alkaline solution to GaN resilient coating 202 to corrode, thus form nano level jagged surface coarsening layer 222 on the surface at GaN resilient coating 202; In the present invention, the surface of GaN resilient coating 202 is corroded to be formed except surface coarsening layer 222 except alkaline solution can be utilized, also plasma chambers can being utilized to carry out dry etching to the surface of GaN resilient coating 202 come, wet etching can also being carried out and then utilize plasma chambers to carry out dry etching having combined by being first immersed in alkaline solution.Combine for wet etching and dry etching and form the technique of surface coarsening layer, the present invention does not limit must dry etching after first wet etching, adopts first dry etching to be equally also fine at wet etching;
(3) on the surface that GaN resilient coating 202 is roughened, adopt MOCVD or molecular beam epitaxy technique (MBE) to form the stepped construction of n-type GaN layer 203, multiple quantum well light emitting layer (MQW) 204, p-type AlGaN layer 205 and p-type GaN layer 206 successively;
(4) at the surperficial spin coating photoresist of p-type GaN layer 206, expose its part surface after development, after this using plasma carries out dry etching to above-mentioned stepped construction, till the part etching into n-type GaN layer 203; Be preferably 1/2 of the thickness retaining n-type GaN layer 203; The ledge structure shown in Fig. 2 is formed after dry etching;
(5) groove (232 of Fig. 2 and the position of 231) is formed respectively in the both sides on p-type GaN layer 206 surface;
(6) adopt sputtering process or electron beam evaporation process on the groove of p-type GaN layer 206 both sides, form reflector 231 and 232, the material in this reflector 231 and 232 can be Al/Ag alloying metal reflector, also can be AlAs/Al
xga
1-xas or AlInP/ (Al
xga
1-x)
yin
1-yp distributed Bragg reflecting layer (DBR); Overlooked by the top of Fig. 2 and look over, reflector 231 is arranged in the both sides of p-type GaN layer 206 with 232 in two parallel array structures, i.e. dash area as shown in Figure 3;
(7) chemico-mechanical polishing (CMP) technique is carried out to p-type GaN layer 206 surface behind sputter reflector 231 and 232, to make the surface planarisation in reflector 231,232 and p-type GaN layer 206;
(8) sputtering process is adopted to form transparent electrode layer 207 on the surface in p-type GaN layer 206;
(9) gallium nitride based light emitting diode completing ledge structure is immersed in alkaline solution, to form surface coarsening layer 221;
(10) carry out thinning to substrate 201, preferably remove 1/2 to 2/3 of the thickness of substrate 201; After this adopt sputtering process to form metallic reflector 200 in the below of substrate 201;
(11) form n-type electrode 211 at the ledge surface of n-type GaN layer 203, form p-type electrode 212 at the upper surface of transparent electrode layer 207; The formation method of electrode 211 and 212 can adopt the technique of this area routine to be formed, such as first spin coating photoresist on the surface of transparent electrode layer 207, expose the surface of the transparent electrode layer 207 that will form electrode 212 after development, after this by sputtering process to form electrode 212; The formation method of electrode 211 is identical therewith.
By the present invention propose the obtained gallium nitride based light emitting diode of manufacture method, owing to being also formed with metallic reflector 200 below substrate 201, thus multiple quantum well light emitting layer 204 sends light is appeared (not shown in Fig. 2) by the front of light-emitting diode or side, to improve luminous efficiency after the reflection of metallic reflector 200.
In addition, in order to the luminous efficiency of light-emitting diode 2 significantly can be improved, in the present invention, except carrying out roughening treatment to GaN resilient coating 202 surface, to be formed beyond nano level jagged surface coarsening layer 222, also to the upper surface of light-emitting diode 2, namely the upper surface of transparent electrode layer 207 carries out roughening treatment, meanwhile, also further equally roughening treatment is carried out to all sides of light-emitting diode 2, thus form surface coarsening layer 221 as shown in Figure 2.After roughening treatment is carried out to the whole outer surface of light-emitting diode 2, the light that multiple quantum well light emitting layer 204 sends is behind each surface arriving light-emitting diode 2, light outside transmission critical angle is due to the repeatedly refraction through surface coarsening layer, finally can enter critical angle interior by each surface transmission out, thus make light-emitting diode 2 send more light, therefore also just improve luminous efficiency.
In order to solve the problem of lumination of light emitting diode lack of uniformity in prior art, the present invention has prepared reflector further.See Fig. 2, be provided with two row reflector 231 and 232 in p-type GaN layer 206, this reflector 231 and 232 can be Al/Ag alloying metal reflector, also can be AlAs/Al
xga
1-xas or AlInP/ (Al
xga
1-x)
yin
1-yp distributed Bragg reflecting layer (DBR).This reflector 231 and 232 can be arranged on the upper surface (as shown in Figure 2) of p-type GaN layer 206, also can be arranged on the upper surface (not shown in Fig. 2) of p-type AlGaN layer 205, or the lower surface being arranged on p-type GaN layer 206 or p-type AlGaN layer 205 also can.
See Fig. 2, by arranging reflector 231 and 232, a part for the light sent by multiple quantum well light emitting layer 204 is directly appeared by the front of light-emitting diode 2, and another part is then appeared by the side of light-emitting diode 2 after the reflection in reflector 231 and 232.Owing to there being the existence in reflector 231 and 232, the light that so can arrive light-emitting diode 2 front is just restricted to the part in Fig. 2 between reflector 231 and 232, and the light reflected by reflector 231 and 232 can only appear from the side of light-emitting diode 2, therefore, this design just can improve the uniformity of luminance of light-emitting diode front and side.
Fig. 3 is the floor map of Fig. 2, is namely overlooked by the top of Fig. 2 and the schematic diagram obtained.See Fig. 3, reflector 231 and 232 is two parallel array structures, a part for the light that the multiple quantum well light emitting layer 204 of light-emitting diode 2 sends is appeared by the region 300 in Fig. 3, and another part light appears from the side of light-emitting diode due to the reflection in reflector 232 and 231.
So far, specifically manufacture method of the present invention is understood.But the embodiment described above is only the preferred embodiments of the present invention, and it is not intended to limit the present invention.Those skilled in the art, under the prerequisite not departing from spirit of the present invention, can make any amendment, and protection scope of the present invention are limited to the appended claims to the present invention.
Claims (2)
1. a manufacture method for gallium nitride based light emitting diode, comprises the following steps:
(1) on substrate, adopt MOCVD epitaxy growing GaN resilient coating, the material of described substrate is sapphire, carborundum, zinc sulphide or GaAs;
(2) utilize the surface of alkaline solution to GaN resilient coating to corrode, thus on GaN buffer-layer surface, form nanoscale hackly surface roughened layer;
(3) on the surface that GaN resilient coating is roughened, adopt MOCVD or molecular beam epitaxy technique (MBE) to form the stepped construction of n-type GaN layer, multiple quantum well light emitting layer (MQW), p-type AlGaN layer and p-type GaN layer successively;
(4) at the surperficial spin coating photoresist of p-type GaN layer, expose its part surface after development, after this using plasma carries out dry etching to above-mentioned stepped construction, until n-type GaN layer is etched away the 1/3-1/2 of its thickness;
(5) groove is formed respectively in the both sides on p-type GaN layer surface;
(6) adopt sputtering process or electron beam evaporation process on the groove of p-type GaN layer both sides, form the first reflector and the second reflector;
(7) chemico-mechanical polishing (CMP) technique is carried out to the p-type GaN layer surface behind sputter first reflector and the second reflector, to make the surface planarisation of the first reflector, the second reflector and p-type GaN layer;
(8) sputtering process is adopted to form transparent electrode layer on the surface in p-type GaN layer;
(9) gallium nitride based light emitting diode completing ledge structure is immersed in alkaline solution, to form nanoscale hackly surface roughened layer;
(10) carry out thinning to substrate, remove 1/2 to 2/3 of the thickness of substrate; After this adopt sputtering process to form metallic reflector in the below of substrate;
(11) form n-type electrode at the ledge surface of n-type GaN layer, form p-type electrode at the upper surface of transparent electrode layer;
Wherein, the first reflector and the second reflector are two parallel array structures and are arranged in the both sides of p-type GaN layer.
2. the manufacture method of gallium nitride based light emitting diode as claimed in claim 1, is characterized in that:
Wherein, the material in described first reflector and the second reflector is Al/Ag alloying metal reflector, or AlAs/Al
xga
1-xas or AlInP/ (Al
xga
1-x)
yin
1-yp distributed Bragg reflecting layer (DBR).
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| CN105679906A (en) * | 2016-03-18 | 2016-06-15 | 厦门乾照光电股份有限公司 | Gallium nitride-based light-emitting diode with lateral wall microstructure and processing technology of gallium nitride-based light-emitting diode |
| US20220376145A1 (en) * | 2019-12-31 | 2022-11-24 | Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. | Micro light-emitting diode chip and manufacturing method therefor, and display device |
| CN112968100A (en) * | 2020-08-14 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Light-emitting device, preparation method and electronic equipment |
| CN112670387B (en) * | 2020-12-31 | 2024-04-02 | 华南理工大学 | Surface plasmon enhanced LED and preparation method thereof |
| CN113555479B (en) * | 2021-07-26 | 2023-09-01 | 苏州汉骅半导体有限公司 | Inverted deep ultraviolet LED and preparation method thereof |
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| CN101593804A (en) * | 2009-06-26 | 2009-12-02 | 厦门大学 | High brightness LED of GaN based multiquantum-well structure and preparation method thereof |
| CN102468376A (en) * | 2010-11-16 | 2012-05-23 | 上海大晨光电科技有限公司 | Method for preparing ternary GaAsP aluminum electrode light-emitting diode chip |
| CN102709420A (en) * | 2012-06-21 | 2012-10-03 | 安徽三安光电有限公司 | GaN-based LED |
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| KR20120073745A (en) * | 2010-12-27 | 2012-07-05 | 일진머티리얼즈 주식회사 | Gan based light emitting device with excellent light efficiency and crystal quality and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101593804A (en) * | 2009-06-26 | 2009-12-02 | 厦门大学 | High brightness LED of GaN based multiquantum-well structure and preparation method thereof |
| CN102468376A (en) * | 2010-11-16 | 2012-05-23 | 上海大晨光电科技有限公司 | Method for preparing ternary GaAsP aluminum electrode light-emitting diode chip |
| CN102709420A (en) * | 2012-06-21 | 2012-10-03 | 安徽三安光电有限公司 | GaN-based LED |
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