CN102983071B - 一种使用普通砂料的单晶硅晶圆片背损伤加工方法 - Google Patents
一种使用普通砂料的单晶硅晶圆片背损伤加工方法 Download PDFInfo
- Publication number
- CN102983071B CN102983071B CN201210534687.8A CN201210534687A CN102983071B CN 102983071 B CN102983071 B CN 102983071B CN 201210534687 A CN201210534687 A CN 201210534687A CN 102983071 B CN102983071 B CN 102983071B
- Authority
- CN
- China
- Prior art keywords
- sand
- silicon wafer
- sand blasting
- course
- sandblasting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000006378 damage Effects 0.000 title claims abstract description 25
- 239000004576 sand Substances 0.000 title claims abstract description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 13
- 238000003672 processing method Methods 0.000 title claims abstract description 7
- 238000005488 sandblasting Methods 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000010926 purge Methods 0.000 claims abstract description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 7
- 235000011089 carbon dioxide Nutrition 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 239000007921 spray Substances 0.000 claims abstract description 6
- 239000004570 mortar (masonry) Substances 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 19
- 208000027418 Wounds and injury Diseases 0.000 claims description 14
- 208000014674 injury Diseases 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 4
- 230000008676 import Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210534687.8A CN102983071B (zh) | 2012-12-12 | 2012-12-12 | 一种使用普通砂料的单晶硅晶圆片背损伤加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210534687.8A CN102983071B (zh) | 2012-12-12 | 2012-12-12 | 一种使用普通砂料的单晶硅晶圆片背损伤加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102983071A CN102983071A (zh) | 2013-03-20 |
CN102983071B true CN102983071B (zh) | 2015-05-06 |
Family
ID=47856959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210534687.8A Active CN102983071B (zh) | 2012-12-12 | 2012-12-12 | 一种使用普通砂料的单晶硅晶圆片背损伤加工方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102983071B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106298439A (zh) * | 2015-05-14 | 2017-01-04 | 比亚迪股份有限公司 | 晶圆的处理方法、制备半导体元件的方法及其应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101347926A (zh) * | 2008-08-22 | 2009-01-21 | 洛阳市鼎晶电子材料有限公司 | 硅片背面干法喷砂制造吸杂源、消除硅抛光表面氧化雾的工艺方法 |
CN101528883A (zh) * | 2006-08-30 | 2009-09-09 | 圣戈本陶瓷及塑料股份有限公司 | 浓的磨料浆料组合物,及其制备方法和使用方法 |
CN101930909A (zh) * | 2009-06-24 | 2010-12-29 | 硅电子股份公司 | 生产半导体晶片的方法 |
CN102027101A (zh) * | 2008-04-24 | 2011-04-20 | Ppt研究公司 | 稳定的水性浆料悬浮体 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100447255B1 (ko) * | 2001-12-31 | 2004-09-07 | 주식회사 하이닉스반도체 | 입자 함침층 조성물 및 이를 이용한 연마 패드 |
-
2012
- 2012-12-12 CN CN201210534687.8A patent/CN102983071B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101528883A (zh) * | 2006-08-30 | 2009-09-09 | 圣戈本陶瓷及塑料股份有限公司 | 浓的磨料浆料组合物,及其制备方法和使用方法 |
CN102027101A (zh) * | 2008-04-24 | 2011-04-20 | Ppt研究公司 | 稳定的水性浆料悬浮体 |
CN101347926A (zh) * | 2008-08-22 | 2009-01-21 | 洛阳市鼎晶电子材料有限公司 | 硅片背面干法喷砂制造吸杂源、消除硅抛光表面氧化雾的工艺方法 |
CN101930909A (zh) * | 2009-06-24 | 2010-12-29 | 硅电子股份公司 | 生产半导体晶片的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102983071A (zh) | 2013-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106119977B (zh) | 单晶硅片制绒添加剂及应用 | |
WO2017049801A1 (zh) | 硅片表面钝化方法及n型双面电池的制作方法 | |
CN204478805U (zh) | 太阳能电池片烧结炉 | |
CN102931290A (zh) | 一种不损伤绒面的多晶硅太阳能电池返工方法 | |
CN102074617A (zh) | 一种丝网印刷返工硅片的处理方法 | |
CN107564805A (zh) | 一种超薄碳化硅芯片的制作方法 | |
CN105185870A (zh) | 一种硅片的磷吸杂扩散工艺 | |
CN102217031A (zh) | 基底处理方法、基底和用于实施该方法的处理装置 | |
CN102983071B (zh) | 一种使用普通砂料的单晶硅晶圆片背损伤加工方法 | |
WO2012022349A3 (de) | Verfahren zur herstellung einer solarzelle mit einem selektiven emitter | |
CN105118896A (zh) | 升温推结扩散工艺 | |
CN102653887A (zh) | 油污晶体硅片的处理方法及制绒方法 | |
CN102299204B (zh) | 一种太阳能电池片扩散工艺中的退舟出炉方法 | |
CN103545169A (zh) | 防止晶圆翘曲变形的方法 | |
WO2012091395A3 (ko) | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 | |
CN106653561B (zh) | 一种具有背吸杂能力的300mm重掺硅片的加工方法 | |
CN106449873A (zh) | 一种铸锭多晶硅片铝吸杂的方法 | |
CN108350604A (zh) | 用于制造半导体层的方法和装置 | |
CN104183476B (zh) | 切削残余部除去装置 | |
CN110137126A (zh) | 一种半导体晶圆双膜切割方法 | |
CN104299890A (zh) | 一种硅片表面钨铁金属离子的清洗方法 | |
CN102174691A (zh) | 在薄膜光伏电池规模制造中基材快速升降温技术 | |
CN203528055U (zh) | 硅片印刷机正面电极印刷工位的定位工装 | |
CN104022187B (zh) | N型晶体硅太阳能电池的选择性发射结结构的实现方法 | |
USH2207H1 (en) | Additional post-glass-removal processes for enhanced cell efficiency in the production of solar cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191220 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 Tianjin Huayuan Technology Industry Park Xiqing district (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |