CN102969424A - 固态发光半导体结构及其外延层成长方法 - Google Patents
固态发光半导体结构及其外延层成长方法 Download PDFInfo
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Abstract
本发明公开一种固态发光半导体结构及其外延层成长方法。此方法包括:提供一基板。形成多个彼此互相间隔的凸出物于基板上。形成一缓冲层于此些凸出物上,并填满或部分填满此些凸出物彼此间的间隙。形成一半导体外延堆叠层于缓冲层上,半导体外延堆叠层包括依序形成的一第一型半导体层、一有源层以及一第二型半导体层。
Description
技术领域
本发明涉及一种发光结构,且特别是涉及一种固态发光半导体结构及其外延层成长方法。
背景技术
发光二极管(Light-Emitting Diode,LED)主要是通过电能转化为光能的方式发光。发光二极管的主要的组成材料是半导体,其中含有带正电的空穴比率较高的称为P型半导体,含有带负电的电子比率较高的称为N型半导体。P型半导体与N型半导体相接处形成PN接面。在发光二极管芯片的正极及负极两端施加电压时,电子将与空穴结合。电子与空穴结合后便以光的形式发出。
以氮化镓为材料的蓝光发光二极管,因材料受限而发展较为缓慢。以蓝宝石为外延承载基板为例,先形成缓冲层于基板上,再于缓冲层上生长出氮化镓,可获得品质较佳的氮化镓晶体。但蓝宝石基板会产生散热不佳的问题,必须再经由转移至高导热性的基板,才能提高发光二极管的散热效率。因此,现有的制作工艺提高制作成本,且增加制作工艺的困难度,并非十分理想。另一方面,若直接在低成本的硅基板上直接生长出氮化镓,则会形成多结晶的氮化镓,且在高温的结晶过程中容易产生裂痕,无法得到无裂痕且高品质的氮化镓晶体,有待进一步改善。
发明内容
本发明的目的在于提供一种固态发光半导体结构及其外延层成长方法,其可制作出高品质及高发光效能的外延层。
根据本发明的一方面,提出一种固态发光半导体结构的外延层成长方法。此方法包括下列步骤。提供一基板。形成多个彼此互相间隔的凸出物于基板上。形成一缓冲层于此些凸出物上,并填满或部分填满此些凸出物彼此间的间隙。形成一半导体外延堆叠层于缓冲层上,半导体外延堆叠层包括依序形成的一第一型半导体层、一有源层以及一第二型半导体层。
根据本发明的另一方面,提出一种固态发光半导体结构,包括一基板、多个凸出物、一缓冲层以及一半导体外延堆叠层。凸出物彼此互相间隔地设于基板上。缓冲层位于些凸出物上并填满或部分填满此些凸出物彼此间的间隙。半导体外延堆叠层位于缓冲层上,其中半导体外延堆叠层依序包括一第一型半导体层、一有源层以及一第二型半导体层。
为了对本发明的上述及其他方面有更佳的了解,下文特举较佳实施例,并配合所附附图,作详细说明如下:
附图说明
图1A~图1D为本发明一实施例的固态发光半导体结构的外延层成长方法的流程示意图;
图2为本发明一实施例的固态发光半导体结构的示意图。
主要元件符号说明
100、100’:固态发光半导体结构
110:基板
112:凸出物
114:空隙
120:缓冲层
130:半导体外延堆叠层
131:未掺杂杂质氮化物外延层
132:第一型半导体层
134:有源层
136:第二型半导体层
具体实施方式
本实施例的固态发光半导体结构及其外延层成长方法,是利用气相沉积法将缓冲层形成于基板的凸出物上,并使缓冲层横向成长而填满基板凸出物彼此间的间隙,以减缓半导体基板与半导体外延堆叠层之间因晶格常数差异产生的应力,避免发生纵向的贯穿裂痕,以防止外延层的品质发生劣化。因此,经过长时间的结晶成长,半导体外延堆叠层成长的品质仍符合要求。
缓冲层的材质可选自氮化铝、氮化镓铝或碳化硅所构成的族群。此外,半导体外延堆叠层的材质可由周期表IIIA族元素的氮化物所构成。IIIA族元素包括硼、铝、镓、铟、铊或其组合。又,N型掺杂的半导体层可添加镁或钙等杂质,而P型掺杂的半导体层可添加硅、硫、硒、锑或锗等杂质。
以下是提出实施例进行详细说明,实施例仅用以作为范例说明,并非用以限缩本发明欲保护的范围。
图1A~图1D绘示依照本发明一实施例的固态发光半导体结构的外延层成长方法的流程示意图。图2绘示依照本发明一实施例的固态发光半导体结构的示意图。固态发光半导体结构100可包括一基板110、多个凸出物112、一缓冲层120以及一半导体外延堆叠层130。以下介绍固态发光半导体结构100的外延层成长方法。
请先参照图1A~图1D。首先,提供一基板110。形成多个彼此互相间隔的凸出物112于基板110上。形成一缓冲层120于此些凸出物112上,并填满此些凸出物112彼此间的间隙。形成一半导体外延堆叠层130于缓冲层120上,半导体外延堆叠层130包括依序形成的一第一型半导体层132、一有源层134以及一第二型半导体层136。
在一实施例中,凸出物112与基板110的材质包括硅。在图1B中,凸出物112是以光刻及蚀刻基板110的方式形成的硅晶凸出物112,蚀刻基板110的方式可为湿式蚀刻或干式蚀刻。凸出物112之间以适当的间隙周期性地在基板110表面上排列出凹凸的结构。在图1C中,通过凸出物112,可使缓冲层120均一地填满于凸出物112彼此间的间隙中。凸出物112可为纳米柱结构或微米柱结构,其高度介于10纳米至10,000纳米(10微米)之间,较佳为100至200纳米之间。两相邻凸出物112的顶端间相距可为10纳米至1000纳米之间,较佳为50至100纳米之间。凸出物112的几何形状也可为三角形、长方形、菱形或其他多边形等,本发明对其形状不加以限制。通过调整凸出物112的大小、间隙及结晶成长条件,使缓冲层120的膜厚减少。
此外,图2所示的另一实施例的固态发光半导体结构100’,缓冲层120可只是部分填满凸出物112之间的间隙,例如图2中的空隙114,即是未受缓冲层120沉积之间隙下半部,而间隙上半部是有受到缓冲层120沉积的。
由于缓冲层120可由凸出物112的顶部及侧面横向成长,直到相互连结成为连贯的平面为止,因此半导体外延堆叠层130与底部的基板110因晶格常数差而产生的应力得以缓和,以避免发生纵向的贯穿裂痕,故能提高后续半导体外延堆叠层130的结晶品质。
缓冲层120的形成方法可为化学气相沉积法(chemical vapor deposition,CVD),例如热丝化学气相沉积法或微波等离子体辅助化学气相沉积法等;或物理气相沉积法(physical vapor deposition,PVD),例如离子束溅镀或蒸镀法等。此外,半导体外延堆叠层130的形成方法包括有机化学气相沉积法(MOCVD)、分子束外延法(MBE)、液相外延法(LPE)或气相外延法(VPE)等。
在图1D中,半导体外延堆叠层130的有源层134可包括多量子阱层,第一型半导体层132可为添加N型杂质的氮化物半导体层,第二型半导体层136可为添加P型杂质的氮化物半导体层。第一型半导体层132与第二型半导体层136可为电性相异的N型半导体层与P型半导体层,可由周期表IIIA族元素的氮化物所构成,例如为氮化镓、氮化镓铝、氮化铟镓或氮化铝铟镓等。
在图1D中,可选择性地形成一未掺杂杂质氮化物外延层131于缓冲层120与第一型半导体层132之间,且未掺杂杂质氮化物外延层131是由周期表IIIA族元素的氮化物所构成,例如是氮化铝、氮化镓或氮化铟镓等。
在本实施例中,虽未绘示后续的制作工艺,但依照实际的需求,半导体外延堆叠层130可经由图案化而裸露出部分第一型半导体层132,以成为具有平台状(mesa)结构的发光二极管。
本发明上述实施例所揭露的固态发光半导体结构及其外延层成长方法,是利用气相沉积法将缓冲层形成于基板的凸出物上,并使缓冲层横向成长而填满基板凸出物彼此间的间隙,以减缓半导体基板与半导体外延堆叠层之间因晶格常数差产生的应力。此外,将缓冲层形成于基板的凸出物上,更可克服不易在硅基板上外延生长出高品质的半导体外延堆叠层的问题,以提高产品的品质。再者,以单晶硅基板做为外延承载基板,具有较佳的导热性,不需再进行基板移除制作工艺,故可简化制作工艺的步骤及成本,并可提高发光二极管的发光效率。
综上所述,虽然结合以上较佳实施例揭露了本发明,然而其并非用以限定本发明。本发明所属技术领域中熟悉此技术者,在不脱离本发明的精神和范围内,可作各种的更动与润饰。因此,本发明的保护范围应以附上的权利要求所界定的为准。
Claims (20)
1.一种固态发光半导体结构的外延层成长方法,包括:
提供一基板;
形成多个彼此互相间隔的凸出物于该基板上;
形成一缓冲层于该些凸出物上,并填满或部分填满该些凸出物彼此间的间隙;以及
形成一半导体外延堆叠层于该缓冲层上,该半导体外延堆叠层包括依序形成的一第一型半导体层、一有源层以及一第二型半导体层。
2.如权利要求1所述的外延层成长方法,其中该些凸出物的形成方法是利用光刻及蚀刻方式形成。
3.如权利要求1所述的外延层成长方法,其中该缓冲层是以化学气相沉积法形成。
4.如权利要求1所述的外延层成长方法,其中该些凸出物是纳米柱结构,每一该纳米柱结构的高度介于10纳米至10,000纳米之间。
5.如权利要求1所述的外延层成长方法,其中两相邻的该多个凸出物的顶端间相距为10纳米至1000纳米之间。
6.如权利要求1所述的外延层成长方法,其中该缓冲层的材质是选自氮化铝或氮化镓铝所构成的族群。
7.如权利要求1所述的外延层成长方法,其中该半导体外延层的材质是由周期表IIIA族元素的氮化物所构成。
8.如权利要求1所述的外延层成长方法,其中该些凸出物的材质包括硅,该基板的材质包括硅。
9.如权利要求1所述的外延层成长方法,其中该第一型半导体层为N型半导体层,该第二型半导体层为P型半导体层。
10.如权利要求1所述的外延层成长方法,其中该有源层包括有多个量子阱层。
11.如权利要求1~10其中任一项所述的外延层成长方法,其中还包括形成一未掺杂杂质氮化物外延层于该缓冲层与该第一型半导体层之间,且该未掺杂杂质氮化物外延层是由周期表IIIA族元素的氮化物所构成。
12.一种固态发光半导体结构,包括:
基板;
多个凸出物,彼此互相间隔地设于该基板上;
缓冲层,位于该些凸出物上并填满或部分填满该些凸出物彼此间的间隙;以及
半导体外延堆叠层,位于该缓冲层上,其中该半导体外延堆叠层依序包括一第一型半导体层、一有源层以及一第二型半导体层。
13.如权利要求12所述的固态发光半导体结构,其中该些凸出物是纳米柱结构,每一该纳米柱结构的高度介于10纳米至10,000纳米之间。
14.如权利要求12所述的固态发光半导体结构,其中两相邻的该多个凸出物的顶端间相距为10纳米至1000纳米之间。
15.如权利要求12所述的固态发光半导体结构,其中该缓冲层的材质是选自氮化铝或氮化镓铝所构成的族群。
16.如权利要求12所述的固态发光半导体结构,其中该半导体外延堆叠层的材质是由周期表IIIA族元素的氮化物所构成。
17.如权利要求12所述的固态发光半导体结构,其中该些凸出物与该基材的材质包括硅。
18.如权利要求12所述的固态发光半导体结构,其中该第一型半导体层为N型半导体层,该第二型半导体层为P型半导体层。
19.如权利要求12所述的固态发光半导体结构,其中该有源层包括有多个量子阱层。
20.如权利要求12~19其中任一项所述的固态发光半导体结构,还包括一未掺杂杂质氮化物外延层于该缓冲层与该第一型半导体层之间,且该未掺杂杂质氮化物外延层是由周期表IIIA族元素的氮化物所构成。
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---|---|---|---|---|
WO2015067183A1 (zh) * | 2013-11-07 | 2015-05-14 | 上海芯元基半导体科技有限公司 | 一种ⅲ-ⅴ族氮化物半导体外延片、包含该外延片的器件及其制备方法 |
CN107093651A (zh) * | 2017-05-18 | 2017-08-25 | 江西比太科技有限公司 | 太阳能硅片二合一自动上下料设备 |
CN111742085A (zh) * | 2017-12-22 | 2020-10-02 | 法国原子能源和替代能源委员会 | 获得氮化物层的方法 |
Families Citing this family (4)
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TWI474507B (zh) * | 2011-10-18 | 2015-02-21 | Lextar Electronics Corp | 固態發光元件之製作方法 |
WO2019127424A1 (zh) * | 2017-12-29 | 2019-07-04 | 深圳前海小有技术有限公司 | 垂直结构led芯片及其制备方法 |
CN112951960B (zh) * | 2021-01-29 | 2023-03-14 | 华灿光电(浙江)有限公司 | 发光二极管外延片及其制备方法 |
CN113314647B (zh) * | 2021-05-27 | 2022-05-31 | 聚灿光电科技(宿迁)有限公司 | 一种led外延结构、led芯片及led外延结构制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101071841A (zh) * | 2006-05-12 | 2007-11-14 | 日立电线株式会社 | 氮化物半导体发光元件 |
US20070290224A1 (en) * | 2006-06-15 | 2007-12-20 | Sharp Kabushiki Kaisha | Method of manufacturing nitride semiconductor light-emitting element and nitride semiconductor light-emitting element |
US20090114933A1 (en) * | 2006-03-31 | 2009-05-07 | Showa Denko K.K., | GaN BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND LAMP |
CN102130245A (zh) * | 2010-12-23 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1284250C (zh) * | 2001-03-21 | 2006-11-08 | 三菱电线工业株式会社 | 半导体发光元件 |
TWI413279B (zh) * | 2008-06-20 | 2013-10-21 | Toyoda Gosei Kk | Iii族氮化物半導體發光元件及其製造方法、以及燈 |
US7781242B1 (en) * | 2009-12-10 | 2010-08-24 | Walsin Lihwa Corporation | Method of forming vertical structure light emitting diode with heat exhaustion structure |
US8399931B2 (en) * | 2010-06-30 | 2013-03-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Layout for multiple-fin SRAM cell |
-
2011
- 2011-08-30 TW TW100131138A patent/TWI514614B/zh not_active IP Right Cessation
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090114933A1 (en) * | 2006-03-31 | 2009-05-07 | Showa Denko K.K., | GaN BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND LAMP |
CN101071841A (zh) * | 2006-05-12 | 2007-11-14 | 日立电线株式会社 | 氮化物半导体发光元件 |
US20070290224A1 (en) * | 2006-06-15 | 2007-12-20 | Sharp Kabushiki Kaisha | Method of manufacturing nitride semiconductor light-emitting element and nitride semiconductor light-emitting element |
CN102130245A (zh) * | 2010-12-23 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015067183A1 (zh) * | 2013-11-07 | 2015-05-14 | 上海芯元基半导体科技有限公司 | 一种ⅲ-ⅴ族氮化物半导体外延片、包含该外延片的器件及其制备方法 |
US10230018B2 (en) | 2013-11-07 | 2019-03-12 | Chip Foundation Technology Ltd. | Substrate used for III-V-nitride growth and manufacturing method thereof |
CN107093651A (zh) * | 2017-05-18 | 2017-08-25 | 江西比太科技有限公司 | 太阳能硅片二合一自动上下料设备 |
CN107093651B (zh) * | 2017-05-18 | 2023-08-04 | 江西比太科技有限公司 | 太阳能硅片二合一自动上下料设备 |
CN111742085A (zh) * | 2017-12-22 | 2020-10-02 | 法国原子能源和替代能源委员会 | 获得氮化物层的方法 |
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TWI514614B (zh) | 2015-12-21 |
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