CN102965731B - 一种解决铌酸钾晶体退火开裂的方法 - Google Patents

一种解决铌酸钾晶体退火开裂的方法 Download PDF

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CN102965731B
CN102965731B CN201210462544.0A CN201210462544A CN102965731B CN 102965731 B CN102965731 B CN 102965731B CN 201210462544 A CN201210462544 A CN 201210462544A CN 102965731 B CN102965731 B CN 102965731B
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crystal
annealing
cracking
boule
acid potassium
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CN102965731A (zh
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王昌运
吴少凡
陈伟
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Fujian Castech Crystals Inc
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Fujian Castech Crystals Inc
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Abstract

一种解决铌酸钾晶体退火开裂的方法,本发明的核心内容是采用碳酸钾和氧化铌为原料,其中钾的过量2%~10%摩尔百分比,经过原料处理,化料,生长,得到晶体毛坯,按照设定降温程序,降温至500℃左右,扭断籽晶,取出铂金杆,让晶体毛坯在坩锅中完成缓慢的退火程序,得到不开裂的晶体毛坯。本发明的优点是采用无籽晶杆退火,降低籽晶杆对晶体毛坯散热不均匀的影响,降低退火引起的开裂问题。

Description

一种解决铌酸钾晶体退火开裂的方法
技术背景
铌酸钾的非线性光学品质因数、电光品质因数、光折变品质因数以及压电性能,在非线性晶体及压电晶体中都名列前茅。二次谐波发生性能指数M大,约等于30,略低于KTP的4倍,是一种性能优良的非线性光学晶体,在激光倍频、参量振荡、电光调制、光束耦合、相位共轭、实时全息存贮等领域有重要应用价值。
铌酸钾晶体在退火阶段需要经过两次相变,等梯度均匀的温场对晶体退火特别重要。现有的晶体生长技术中的晶体退火阶段一般都将铂金杆与晶体一起退火,铂金杆具有导热作用,因此影响了温场,造成晶体内部和边缘散热的不均匀,导致晶体在降温过程中发生开裂。所以要得到完整不开裂晶体,对晶体生长退火程序要求很高,只有完整的晶体在合适的退火条件下才有可能经过两次相变而不发生开裂。
发明内容
本为了解决现有铌酸钾晶体生长中的开裂问题,本发明提供了一种解决铌酸钾晶体退火开裂问题的方法,通过如下方式实现:采用碳酸钾和氧化铌为原料,其中钾元素过量2%~10%摩尔百分比,经过原料处理,化料,生长,得到晶体毛坯,按照设定的降温程序,降温至450~500℃范围内,扭断籽晶,取出铂金杆,让晶体毛坯单独在坩锅中完成退火程序,从而得到不开裂的晶体毛坯。
本发明的优点是晶体毛坯在退火阶段处于一个受热均匀的温场中,降低退火引起的开裂问题。
具体实施方式
实施例一:称取一定量的碳酸钾和氧化铌,满足K比Nb过量2%~10%(摩尔百分比)于原料桶中混匀。将混好的量经过烧结处理,于1200℃化料,倒入直径85mm铂金坩埚,置于晶体生长装置中,升温至1200℃保温、搅拌一天,24h之后取出搅拌桨,下籽晶片试晶直至不熔不长,然后在该温度点以上2℃下种。经过十天左右生长提起,按10℃/h降温速率降至500℃,然后将晶体毛坯摇至坩锅中,扭断籽晶,取出籽晶杆,让晶体按2℃/h降温速率降至室温,得到不开裂晶体毛坯68g。

Claims (2)

1.一种解决铌酸钾晶体退火开裂的方法,其特征在于,包括以下步骤:
S1:采用碳酸钾和氧化铌为原料,经过原料处理,化料,生长,得到晶体毛坯;
S2:待晶体毛坯降温至450~500℃后,扭断籽晶,取出铂金杆,单独让晶体毛坯在坩埚中完成退火程序。
2.如权利要求1所述一种解决铌酸钾晶体退火开裂的方法,其特征在于:所述步骤S1中原料所含钾元素过量2%~10%摩尔百分比。
CN201210462544.0A 2012-11-16 2012-11-16 一种解决铌酸钾晶体退火开裂的方法 Active CN102965731B (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1043537A (zh) * 1988-11-05 1990-07-04 山道士有限公司 铌酸盐晶体
CN102242399A (zh) * 2010-05-12 2011-11-16 上海伟钊光学科技有限公司 钒酸钇晶体的退火方法

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JPH09328394A (ja) * 1996-06-07 1997-12-22 Shin Etsu Chem Co Ltd 酸化物単結晶の製造方法
JP2002220295A (ja) * 2001-01-18 2002-08-09 Mitsui Chemicals Inc 結晶育成方法
JP2003327490A (ja) * 2002-05-15 2003-11-19 Mitsui Chemicals Inc 酸化物単結晶の製造方法および該製造方法に用いられる製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1043537A (zh) * 1988-11-05 1990-07-04 山道士有限公司 铌酸盐晶体
CN102242399A (zh) * 2010-05-12 2011-11-16 上海伟钊光学科技有限公司 钒酸钇晶体的退火方法

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