CN102956779B - 发光器件及发光器件封装件 - Google Patents

发光器件及发光器件封装件 Download PDF

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Publication number
CN102956779B
CN102956779B CN201210023389.2A CN201210023389A CN102956779B CN 102956779 B CN102956779 B CN 102956779B CN 201210023389 A CN201210023389 A CN 201210023389A CN 102956779 B CN102956779 B CN 102956779B
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China
Prior art keywords
light emitting
layer
semiconductor layer
conductive type
contact
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CN201210023389.2A
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Chinese (zh)
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CN102956779A (zh
Inventor
丁焕熙
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Suzhou Liyu Semiconductor Co ltd
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LG Innotek Co Ltd
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Publication of CN102956779A publication Critical patent/CN102956779A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
CN201210023389.2A 2011-08-22 2012-02-02 发光器件及发光器件封装件 Active CN102956779B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110083723A KR20130021300A (ko) 2011-08-22 2011-08-22 발광소자, 발광소자 패키지, 및 라이트 유닛
KR10-2011-0083723 2011-08-22

Publications (2)

Publication Number Publication Date
CN102956779A CN102956779A (zh) 2013-03-06
CN102956779B true CN102956779B (zh) 2017-06-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210023389.2A Active CN102956779B (zh) 2011-08-22 2012-02-02 发光器件及发光器件封装件

Country Status (5)

Country Link
US (1) US9564422B2 (enExample)
EP (1) EP2562815B1 (enExample)
JP (1) JP5960436B2 (enExample)
KR (1) KR20130021300A (enExample)
CN (1) CN102956779B (enExample)

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EP2755245A3 (en) * 2013-01-14 2016-05-04 LG Innotek Co., Ltd. Light emitting device
KR102098110B1 (ko) * 2013-04-11 2020-04-08 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
EP2985792B1 (en) * 2013-04-12 2019-09-18 Seoul Viosys Co., Ltd. Ultraviolet light-emitting device
WO2014178654A1 (ko) * 2013-04-30 2014-11-06 주식회사 세미콘라이트 반도체 발광소자, 반도체 발광소자의 제조방법 및 반도체 발광소자를 포함하는 백라이트 유닛
KR101521574B1 (ko) * 2013-06-25 2015-05-19 비비에스에이 리미티드 반도체 발광소자를 제조하는 방법
KR101534941B1 (ko) * 2013-11-15 2015-07-07 현대자동차주식회사 도전성 전극패턴의 형성방법 및 이를 포함하는 태양전지의 제조방법
US10910350B2 (en) * 2014-05-24 2021-02-02 Hiphoton Co., Ltd. Structure of a semiconductor array
JP6462274B2 (ja) * 2014-08-21 2019-01-30 株式会社東芝 半導体発光素子
TWI552394B (zh) * 2014-11-18 2016-10-01 隆達電子股份有限公司 發光二極體結構與發光二極體模組
JP2017059638A (ja) * 2015-09-15 2017-03-23 株式会社東芝 半導体発光素子
TWI646706B (zh) 2015-09-21 2019-01-01 隆達電子股份有限公司 發光二極體晶片封裝體
JP6354799B2 (ja) * 2015-12-25 2018-07-11 日亜化学工業株式会社 発光素子
KR20180073866A (ko) * 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자
KR102381866B1 (ko) * 2017-05-02 2022-04-04 서울바이오시스 주식회사 자외선 발광 다이오드
CN109768134A (zh) * 2019-01-28 2019-05-17 华引芯（武汉）科技有限公司 一种发光高效率反转垂直结构高压芯片及其制备方法
KR102761522B1 (ko) * 2020-08-14 2025-02-04 삼성디스플레이 주식회사 표시 장치 및 그 제조방법

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CN101828270A (zh) * 2007-10-15 2010-09-08 Lg伊诺特有限公司 发光器件及其制造方法
CN101859758A (zh) * 2009-04-06 2010-10-13 美商克立股份有限公司 高电压低电流面发射led
CN102005465A (zh) * 2009-08-31 2011-04-06 Lg伊诺特有限公司 发光器件以及具有该发光器件的发光器件封装

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EP0926744B8 (en) * 1997-12-15 2008-05-21 Philips Lumileds Lighting Company, LLC. Light emitting device
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
TWI223460B (en) * 2003-09-23 2004-11-01 United Epitaxy Co Ltd Light emitting diodes in series connection and method of making the same
WO2006098545A2 (en) 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
WO2009106063A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Monolithischer, optoelektronischer halbleiterkörper und verfahren zur herstellung eines solchen
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
DE102009006177A1 (de) * 2008-11-28 2010-06-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
TWM374153U (en) * 2009-03-19 2010-02-11 Intematix Technology Ct Corp Light emitting device applied to AC drive
WO2010114250A2 (en) * 2009-03-31 2010-10-07 Seoul Semiconductor Co., Ltd. Light emitting device having plurality of light emitting cells and method of fabricating the same
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP2011199221A (ja) 2010-03-24 2011-10-06 Hitachi Cable Ltd 発光ダイオード
CN102859726B (zh) * 2010-04-06 2015-09-16 首尔伟傲世有限公司 发光二极管及其制造方法
DE102011015821B4 (de) * 2011-04-01 2023-04-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
WO2012158709A1 (en) * 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
CN101828270A (zh) * 2007-10-15 2010-09-08 Lg伊诺特有限公司 发光器件及其制造方法
CN101859758A (zh) * 2009-04-06 2010-10-13 美商克立股份有限公司 高电压低电流面发射led
CN102005465A (zh) * 2009-08-31 2011-04-06 Lg伊诺特有限公司 发光器件以及具有该发光器件的发光器件封装

Also Published As

Publication number Publication date
KR20130021300A (ko) 2013-03-05
JP2013046049A (ja) 2013-03-04
EP2562815A2 (en) 2013-02-27
EP2562815B1 (en) 2018-11-14
US20130049008A1 (en) 2013-02-28
CN102956779A (zh) 2013-03-06
EP2562815A3 (en) 2014-08-27
JP5960436B2 (ja) 2016-08-02
US9564422B2 (en) 2017-02-07

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Effective date of registration: 20210813

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China