CN102956775A - 一种发光二极管芯片及其制造方法 - Google Patents
一种发光二极管芯片及其制造方法 Download PDFInfo
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- CN102956775A CN102956775A CN2011102415299A CN201110241529A CN102956775A CN 102956775 A CN102956775 A CN 102956775A CN 2011102415299 A CN2011102415299 A CN 2011102415299A CN 201110241529 A CN201110241529 A CN 201110241529A CN 102956775 A CN102956775 A CN 102956775A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000001259 photo etching Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 238000001039 wet etching Methods 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 27
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000009616 inductively coupled plasma Methods 0.000 abstract description 14
- 229910002601 GaN Inorganic materials 0.000 description 23
- 238000005516 engineering process Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004224 protection Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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CN201110241529.9A CN102956775B (zh) | 2011-08-22 | 2011-08-22 | 一种发光二极管芯片及其制造方法 |
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CN201110241529.9A CN102956775B (zh) | 2011-08-22 | 2011-08-22 | 一种发光二极管芯片及其制造方法 |
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CN102956775A true CN102956775A (zh) | 2013-03-06 |
CN102956775B CN102956775B (zh) | 2015-02-18 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103647005A (zh) * | 2013-12-04 | 2014-03-19 | 南昌大学 | 一种用于AlGaInN材料体系薄膜生长的分割图形蓝宝石衬底 |
CN108666212A (zh) * | 2018-05-02 | 2018-10-16 | 南方科技大学 | 一种led芯片制作方法 |
CN108666306A (zh) * | 2017-03-27 | 2018-10-16 | 英属开曼群岛商錼创科技股份有限公司 | 图案化基板与发光二极管晶圆 |
CN110690327A (zh) * | 2019-09-11 | 2020-01-14 | 佛山市国星半导体技术有限公司 | 一种高亮度紫光led芯片的制备方法及led芯片 |
CN115207175A (zh) * | 2022-08-26 | 2022-10-18 | 江苏第三代半导体研究院有限公司 | 基于图形化衬底的发光二极管芯片及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005091389A1 (en) * | 2004-03-19 | 2005-09-29 | Showa Denko K.K. | Compound semiconductor light-emitting device and production method thereof |
KR20090022286A (ko) * | 2007-08-30 | 2009-03-04 | 서울옵토디바이스주식회사 | 발광 다이오드 및 그 제조방법 |
JP2009176781A (ja) * | 2008-01-21 | 2009-08-06 | Mitsubishi Chemicals Corp | GaN系LEDチップおよびGaN系LEDチップの製造方法 |
CN101661988A (zh) * | 2009-09-17 | 2010-03-03 | 上海蓝光科技有限公司 | 发光二极管芯片及其制造方法 |
CN101814565A (zh) * | 2010-03-02 | 2010-08-25 | 上海蓝光科技有限公司 | 一种发光二极管芯片的结构及其制造方法 |
-
2011
- 2011-08-22 CN CN201110241529.9A patent/CN102956775B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005091389A1 (en) * | 2004-03-19 | 2005-09-29 | Showa Denko K.K. | Compound semiconductor light-emitting device and production method thereof |
KR20090022286A (ko) * | 2007-08-30 | 2009-03-04 | 서울옵토디바이스주식회사 | 발광 다이오드 및 그 제조방법 |
JP2009176781A (ja) * | 2008-01-21 | 2009-08-06 | Mitsubishi Chemicals Corp | GaN系LEDチップおよびGaN系LEDチップの製造方法 |
CN101661988A (zh) * | 2009-09-17 | 2010-03-03 | 上海蓝光科技有限公司 | 发光二极管芯片及其制造方法 |
CN101814565A (zh) * | 2010-03-02 | 2010-08-25 | 上海蓝光科技有限公司 | 一种发光二极管芯片的结构及其制造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103647005A (zh) * | 2013-12-04 | 2014-03-19 | 南昌大学 | 一种用于AlGaInN材料体系薄膜生长的分割图形蓝宝石衬底 |
CN108666306A (zh) * | 2017-03-27 | 2018-10-16 | 英属开曼群岛商錼创科技股份有限公司 | 图案化基板与发光二极管晶圆 |
CN108666306B (zh) * | 2017-03-27 | 2021-11-16 | 英属开曼群岛商錼创科技股份有限公司 | 图案化基板与发光二极管晶圆 |
CN108666212A (zh) * | 2018-05-02 | 2018-10-16 | 南方科技大学 | 一种led芯片制作方法 |
CN108666212B (zh) * | 2018-05-02 | 2023-01-10 | 南方科技大学 | 一种led芯片制作方法 |
CN110690327A (zh) * | 2019-09-11 | 2020-01-14 | 佛山市国星半导体技术有限公司 | 一种高亮度紫光led芯片的制备方法及led芯片 |
CN115207175A (zh) * | 2022-08-26 | 2022-10-18 | 江苏第三代半导体研究院有限公司 | 基于图形化衬底的发光二极管芯片及其制备方法 |
CN115207175B (zh) * | 2022-08-26 | 2024-05-28 | 江苏第三代半导体研究院有限公司 | 基于图形化衬底的发光二极管芯片及其制备方法 |
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CN102956775B (zh) | 2015-02-18 |
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Effective date of registration: 20151120 Address after: 250101 No. 2877, route No., hi tech Zone, Shandong, Ji'nan Patentee after: Inspur Group Co., Ltd. Address before: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Patentee before: Shandong Inspur Huaguang Optoelectronics Co., Ltd. |
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Effective date of registration: 20160612 Address after: 276025 No. 28, Hangzhou Road, Linyi economic and Technological Development Zone, Shandong Patentee after: Shandong Inspur Co., Ltd. Address before: 250101 No. 2877, route No., hi tech Zone, Shandong, Ji'nan Patentee before: Inspur Group Co., Ltd. |
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