CN102956759B - 一种剥离制备ito图形的方法 - Google Patents
一种剥离制备ito图形的方法 Download PDFInfo
- Publication number
- CN102956759B CN102956759B CN201110241691.0A CN201110241691A CN102956759B CN 102956759 B CN102956759 B CN 102956759B CN 201110241691 A CN201110241691 A CN 201110241691A CN 102956759 B CN102956759 B CN 102956759B
- Authority
- CN
- China
- Prior art keywords
- sio
- layer
- ito
- evaporation
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 31
- 238000001704 evaporation Methods 0.000 claims abstract description 27
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 36
- 230000008020 evaporation Effects 0.000 claims description 23
- 238000005260 corrosion Methods 0.000 claims description 15
- 230000007797 corrosion Effects 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 10
- 239000000428 dust Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 16
- 229910052681 coesite Inorganic materials 0.000 abstract 8
- 229910052906 cristobalite Inorganic materials 0.000 abstract 8
- 239000000377 silicon dioxide Substances 0.000 abstract 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract 8
- 229910052682 stishovite Inorganic materials 0.000 abstract 8
- 229910052905 tridymite Inorganic materials 0.000 abstract 8
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 230000003313 weakening effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- -1 indium tin metal oxide Chemical class 0.000 description 1
- KYCHGXYBBUEKJK-UHFFFAOYSA-K indium(3+);trichloride;hydrate Chemical compound O.Cl[In](Cl)Cl KYCHGXYBBUEKJK-UHFFFAOYSA-K 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110241691.0A CN102956759B (zh) | 2011-08-22 | 2011-08-22 | 一种剥离制备ito图形的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110241691.0A CN102956759B (zh) | 2011-08-22 | 2011-08-22 | 一种剥离制备ito图形的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102956759A CN102956759A (zh) | 2013-03-06 |
CN102956759B true CN102956759B (zh) | 2015-04-01 |
Family
ID=47765292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110241691.0A Expired - Fee Related CN102956759B (zh) | 2011-08-22 | 2011-08-22 | 一种剥离制备ito图形的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102956759B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104362226B (zh) * | 2014-09-30 | 2017-03-15 | 山东成林光电技术有限责任公司 | 新型led芯片的制作方法 |
CN108206229A (zh) * | 2016-12-20 | 2018-06-26 | 山东浪潮华光光电子股份有限公司 | 一种GaN基LED中ITO图形的制作方法 |
CN111487845A (zh) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | 一种可以直接剥离的led管芯电极掩模图形的制作方法 |
CN110148556A (zh) * | 2019-05-20 | 2019-08-20 | 上海华虹宏力半导体制造有限公司 | 一种改善半导体制造中光刻胶倒胶的方法 |
CN113506729B (zh) * | 2021-06-25 | 2023-12-12 | 上海华虹宏力半导体制造有限公司 | 红外mems电极的制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101631746A (zh) * | 2007-03-19 | 2010-01-20 | 韩国电子通信研究院 | 氧化铟锡电子束光刻胶的合成方法和使用其形成氧化铟锡图案的方法 |
CN101800242A (zh) * | 2009-02-11 | 2010-08-11 | 中国科学院微电子研究所 | 用纳米晶材料作为库仑岛的纳米电子器件及其制作方法 |
CN102130230A (zh) * | 2010-12-28 | 2011-07-20 | 中国科学院半导体研究所 | 发光二极管的制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10104193A1 (de) * | 2001-01-31 | 2002-08-01 | Max Planck Gesellschaft | Verfahren zur Herstellung einer Halbleiterstruktur mit Siliziumclustern und/oder -nanokristallen und eine Halbleiterstruktur dieser Art |
-
2011
- 2011-08-22 CN CN201110241691.0A patent/CN102956759B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101631746A (zh) * | 2007-03-19 | 2010-01-20 | 韩国电子通信研究院 | 氧化铟锡电子束光刻胶的合成方法和使用其形成氧化铟锡图案的方法 |
CN101800242A (zh) * | 2009-02-11 | 2010-08-11 | 中国科学院微电子研究所 | 用纳米晶材料作为库仑岛的纳米电子器件及其制作方法 |
CN102130230A (zh) * | 2010-12-28 | 2011-07-20 | 中国科学院半导体研究所 | 发光二极管的制备方法 |
Non-Patent Citations (1)
Title |
---|
掩膜对GaAs基二维光子晶体ICP刻蚀效果的影响;徐晨等;《纳米技术与精密工程》;20110531;第9卷(第3期);第279-282页 * |
Also Published As
Publication number | Publication date |
---|---|
CN102956759A (zh) | 2013-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102956759B (zh) | 一种剥离制备ito图形的方法 | |
CN104752490B (zh) | 一种有机发光二极管显示面板及其制作方法、显示装置 | |
AU2010202844B2 (en) | Method for etching a see-through thin film solar module | |
CN105914183B (zh) | Tft基板的制造方法 | |
US9583729B2 (en) | Method for producing an electronic component | |
CN104733569B (zh) | 纳米尺寸图形化衬底的制备方法 | |
WO2015027626A1 (zh) | 显示面板及其制备方法、显示装置 | |
CN102522323A (zh) | 一种ito图案化方法 | |
CN105719955B (zh) | 一种GaN基发光二极管芯片的制备方法 | |
CN108511573A (zh) | 一种GaN基发光二极管芯片的制备方法 | |
CN102969393A (zh) | 一种基底上ito薄膜图案化方法 | |
CN104518056B (zh) | 一种反极性AlGaInP红光LED芯片的制备方法 | |
CN106025012A (zh) | 一种led芯片的制备方法及采用该方法制备的led芯片 | |
CN103723927A (zh) | 具波浪形表面的玻璃基板的制造方法 | |
JP2016533004A (ja) | 導電性基板およびその製造方法 | |
CN105226502B (zh) | 一种窄脊条型GaAs基GaInP量子阱结构半导体激光器的制备方法 | |
CN107546246A (zh) | 柔性oled显示器件及制作方法 | |
CN102931298B (zh) | 一种GaN基LED制造工艺中ITO图形的制作方法 | |
CN104659165A (zh) | 一种GaN基发光二极管芯片的制备方法 | |
CN105355554A (zh) | 一种100v肖特基二极管台面制作方法 | |
CN103700670B (zh) | 阵列基板及其制作方法、显示装置 | |
CN103117333A (zh) | 一种提高器件良率的透明电极制作方法 | |
TWI430400B (zh) | 製備薄膜電晶體基材之方法及剝離組合物 | |
CN108206229A (zh) | 一种GaN基LED中ITO图形的制作方法 | |
CN104465511B (zh) | 阵列基板、显示装置以及阵列基板的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151120 Address after: 250101 No. 2877, route No., hi tech Zone, Shandong, Ji'nan Patentee after: Inspur Group Co., Ltd. Address before: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Patentee before: Shandong Inspur Huaguang Optoelectronics Co., Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160606 Address after: 276025 No. 28, Hangzhou Road, Linyi economic and Technological Development Zone, Shandong Patentee after: Shandong Inspur Co., Ltd. Address before: 250101 No. 2877, route No., hi tech Zone, Shandong, Ji'nan Patentee before: Inspur Group Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150401 Termination date: 20160822 |
|
CF01 | Termination of patent right due to non-payment of annual fee |