CN102956570B - 母座、功率半导体模块以及具有多个功率半导体模块的半导体模块组装件 - Google Patents
母座、功率半导体模块以及具有多个功率半导体模块的半导体模块组装件 Download PDFInfo
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- CN102956570B CN102956570B CN201210293867.1A CN201210293867A CN102956570B CN 102956570 B CN102956570 B CN 102956570B CN 201210293867 A CN201210293867 A CN 201210293867A CN 102956570 B CN102956570 B CN 102956570B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 233
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 230000000712 assembly Effects 0.000 claims description 4
- 238000000429 assembly Methods 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000010891 electric arc Methods 0.000 description 17
- 239000004020 conductor Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 241000036318 Callitris preissii Species 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- -1 i.e. Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Conversion In General (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11177800.7 | 2011-08-17 | ||
EP11177800 | 2011-08-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102956570A CN102956570A (zh) | 2013-03-06 |
CN102956570B true CN102956570B (zh) | 2017-06-23 |
Family
ID=46581855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210293867.1A Active CN102956570B (zh) | 2011-08-17 | 2012-08-17 | 母座、功率半导体模块以及具有多个功率半导体模块的半导体模块组装件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130043578A1 (zh) |
EP (1) | EP2560204A3 (zh) |
JP (1) | JP6013079B2 (zh) |
KR (1) | KR102125099B1 (zh) |
CN (1) | CN102956570B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104282636A (zh) * | 2014-10-17 | 2015-01-14 | 国家电网公司 | 一种使用热管的压接式igbt封装结构 |
WO2018047300A1 (ja) * | 2016-09-09 | 2018-03-15 | 三菱電機株式会社 | 半導体装置 |
JP6692438B2 (ja) * | 2016-09-13 | 2020-05-13 | 三菱電機株式会社 | 半導体モジュール |
CN110767643B (zh) * | 2018-07-25 | 2024-05-31 | 清华大学 | 一种电气器件 |
WO2021220351A1 (ja) * | 2020-04-27 | 2021-11-04 | 三菱電機株式会社 | 通電構造およびパワー半導体モジュール |
CN112490724B (zh) * | 2020-11-27 | 2023-02-03 | 株洲中车时代半导体有限公司 | 一种碟簧组件及功率半导体模块 |
CN113834527A (zh) * | 2021-09-18 | 2021-12-24 | 重庆大学 | 一种压接型功率半导体结构及其内部压力在线测量方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1513207A (zh) * | 2001-06-01 | 2004-07-14 | Abb瑞士有限公司 | 接触装置 |
EP1475832A1 (de) * | 2003-05-05 | 2004-11-10 | ABB Technology AG | Druckkontaktierbares Leistungshalbleitermodul |
CN1561543A (zh) * | 2001-09-10 | 2005-01-05 | Abb瑞士有限公司 | 可压力接触的功率半导体模块 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19903245A1 (de) * | 1999-01-27 | 2000-08-03 | Asea Brown Boveri | Leistungshalbleitermodul |
EP1263045A1 (en) * | 2001-06-01 | 2002-12-04 | ABB Schweiz AG | High power semiconductor module |
-
2012
- 2012-08-02 EP EP12178974.7A patent/EP2560204A3/en not_active Withdrawn
- 2012-08-16 US US13/587,461 patent/US20130043578A1/en not_active Abandoned
- 2012-08-17 JP JP2012180884A patent/JP6013079B2/ja active Active
- 2012-08-17 CN CN201210293867.1A patent/CN102956570B/zh active Active
- 2012-08-17 KR KR1020120090073A patent/KR102125099B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1513207A (zh) * | 2001-06-01 | 2004-07-14 | Abb瑞士有限公司 | 接触装置 |
CN1561543A (zh) * | 2001-09-10 | 2005-01-05 | Abb瑞士有限公司 | 可压力接触的功率半导体模块 |
EP1475832A1 (de) * | 2003-05-05 | 2004-11-10 | ABB Technology AG | Druckkontaktierbares Leistungshalbleitermodul |
Also Published As
Publication number | Publication date |
---|---|
CN102956570A (zh) | 2013-03-06 |
EP2560204A3 (en) | 2016-06-08 |
JP6013079B2 (ja) | 2016-10-25 |
KR102125099B1 (ko) | 2020-06-22 |
EP2560204A2 (en) | 2013-02-20 |
KR20130020629A (ko) | 2013-02-27 |
JP2013048239A (ja) | 2013-03-07 |
US20130043578A1 (en) | 2013-02-21 |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180504 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB TECHNOLOGY Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210618 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231226 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |