CN102947943A - 包含透明的导电氧化物膜的基底及其制造方法 - Google Patents
包含透明的导电氧化物膜的基底及其制造方法 Download PDFInfo
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Abstract
本发明涉及一种基底,其包含由透明的导电氧化物(TCO)制成的至少一个散射膜,和涉及制造这样的基底的方法。它还涉及包含这样的基底的太阳能电池。本发明的基底包含由选自电介质和透明导电氧化物的材料制成的球形粒子层,该层涂覆有TCO膜,并且所述的球形粒子的直径属于至少两个不同的直径群。本发明可具体用于太阳能电池。
Description
本发明涉及一种基底,其包含由透明的导电氧化物(TCO)制成的至少一个散射膜,和涉及制造这样的基底的方法。
它还涉及包含这样的基底的太阳能电池。
在改进薄膜太阳能电池性能方面一个非常令人感兴趣的主题是开发用于沉积具有优化的电学和光学性能的透明的导电氧化物(TCO)的方式,即,典型的在350-1100nm波长范围内透射率高于90%和电阻率低于5×10-4Ω.cm。这些太阳能电池是基于氢化的无定形硅(a-Si:H)的电池、串联电池、基于由Cu(In,Ga)Se2(CIGS)制成的吸收层的电池等。
在这些太阳能电池中,使用表面纹理化的TCO来改进光子朝着太阳能电池活性材料的散射(光学捕获),和因此提高光电转化效率。
纹理化的透明的导电氧化物的光学响应通常是通过它的“雾度值”(即,它的光散射因子)来量化的。
这种量是透射的散射光与透射光总量的比率。
为了改进光子朝着太阳能电池活性材料的散射,和因此提高光电转化效率,已知的是将透明氧化物层的表面(入射光经由该表面进入太阳能电池)进行“纹理化”。这种“纹理化”对应于在TCO层表面上产生粗糙度,即,产生一系列的凹陷和突起。
图1示意了一种具有上层(superstrate)构造的a-Si:H太阳能电池,即,光穿过玻璃基底进入其中,和
图2示意了具有基底构造的CIGS电池的结构。
可以看到,在这些结构中,TCO层的厚度典型的是200nm-1μm。
在这些构造中,TCO层(其功能是透射光线)充当了电荷收集电极,并且通过它的“纹理化”来散射光线。
该纹理化的TCO层是通过大气压化学气相沉积(APCVD),在200-600℃的温度生产的,这样来获得“纹理化”。
通常,TCO是氟掺杂的氧化锡(SnO2:F)。
这种玻璃是使用欧洲专利申请No.1443527A1中所述的方法来制造的。
这种方法的组成为:在500℃的温度,通过大气压化学气相沉积来在玻璃基底上沉积透明的导电氧化物膜,同时注入四氯化锡、水和气态氯化氢。使用这种方法,在玻璃基底表面上形成了不连续的突起。
接下来,使用大气压化学气相沉积方法在这些不连续的突起上形成连续的透明的导电氧化物层。这个层还可以通过电子束气相沉积、真空气相沉积方法、喷雾方法或者溅射方法来生产。
但是,在这种方法中,所形成的凹陷和突起,独立于它们的纹理化,全部都是相同尺寸的,并且所获得的玻璃具有比中心在大约350-400nm的波长范围仅仅80%更高的扩散光透射率。
另外,这些扩散透射率值从550nm向上时非常快的降低到低于80%。
此外,J.Zhu等人在“Nanodome Solar Cells with Efficient Light Management andSelf-Cleaning”Nanoletters 2009中描述了一种技术,用于将基底纹理化成纳米圆盖的形式,来结构化完全的a-Si:H太阳能电池多层。这些纳米圆盖是通过等离子体蚀刻事先沉积在基底上的二氧化硅珠来生产的。
这些珠子的蚀刻产生了一种周期性阵列的纳米圆盖。这种周期性阵列然后经由多层的沉积来在整个电池中再现。但是,这种方法包含许多步骤,包括蚀刻二氧化硅珠的步骤。在制造方法中引入另外的步骤导致了不可忽视的成本增加。
本发明目标是如下来克服形成包含一个或多个由透明的导电氧化物制成的散射层的基底的方法的问题:通过提供包含至少一个透明的导电氧化物散射层的基底及其制造方法,使得散射因子或者雾度值能够高于在350-1500nm的整个波长上所获得的80%,该方法仅需几个制造步骤。
为此目的,本发明涉及一种基底,其包含由沉积在载体至少一个表面上的透明的导电氧化物(TCO)制成的至少第一散射层,特征在于它另外包含由选自电介质材料和透明的导电氧化物的材料制成的球形粒子的层,并且其直径属于至少两个不同的直径群,在由TCO制成的层中,该由TCO制成的层具有基本上恒定的厚度,即,是等形沉积(conformal deposition)的。
措词“基本上恒定的厚度”被理解为表示在所述层的平均厚度上下,厚度差异不大于20%和优选不大于10%。
措词“两个不同的直径群”被具体理解为表示在形成层3的总球形粒子群中,至少5%数目的所述的粒子所具有的直径比相对于球形粒子总数的至少5%数目的球形粒子的直径大或小多于500nm。
优选本发明的基底另外在载体和球形粒子层之间包含由透明的导电氧化物制成的第二层,该导电氧化物等同于或者不同于形成第一TCO层的导电氧化物。
有利的,该第一和第二TCO层包覆球形粒子层,以使得所述的粒子与TCO层连续接触。
本发明基底的载体是由选自下面的材料制成的:玻璃、p-掺杂的硅、n-掺杂的硅、氢化的无定形硅(a-Si:H)、Cu(In,Ga)Se2、单晶硅或者多晶硅、CdS、或者有机电池层。
在本发明所用的球形粒子层中,所述粒子没有彼此全部接触。优选它们仅仅部分接触。
该球形粒子优选的平均直径是300nm-10μm。这个直径可以通过透射电子显微镜法来测量。
根据一种优选的实施方案,在形成层3的球形粒子总群中,至少15%数目的所述的粒子具有比在100%数目的球形粒子中至少15%数目的球形粒子的直径大或小多于500nm的直径。
在另外一种优选的实施方案中,整个球形粒子群的至少10%和优选15%数目的粒子的直径是200nm-4μm,和整个球形粒子群的至少10%和优选15%数目的粒子的直径是4.5μm-12μm,其余的粒子具有中间直径。
在这种情况中,更优选在直径为200nm-4μm的粒子群中,相对于粒子总数,至少5%数目的粒子的直径是300nm-3.5μm,和在直径为4.5μm-12μm的粒子群中,相对于粒子总数,5%数目的全部的粒子群一起采用了大于4.5μm和小于6μm的直径。
该球形粒子是由选自下面的材料制成的:SiO2、SnO2、ZnO、ZnO:Al、ZnO:B、SnO2:F、ITO、氟-掺杂的氧化铟、In2O3:Mo(IMO)和ZnO:Ga。
关于透明的导电氧化物,它选自ZnO:Al(AZO)、ZnO:B(BZO)、ZnO:Ga(GZO)、SnO2:F、In2O3:Sn(ITO)、ITO:ZnO、ITO:Ti、In2O3、In2O3:ZnO(IZO)、In2O3:F、In2O3:Mo(IMO)、In2O3:Ga、In2O3:Ti、In2O3:W、In2O3:Zr、In2O3:Nb、ZnO:(Al,F)和ZnO:(Ga,B)。
本发明还提供了一种制造基底的方法,该基底包含由透明的导电氧化物(TCO)制成的至少一个散射层,特征在于它包含下面的步骤:
a)在载体的至少一个表面上沉积选自电介质材料和透明的导电氧化物的材料制成的球形粒子的层,并且其直径属于至少两个不同的直径群;和
b)在该球形粒子层的空闲表面上沉积由等角的透明的导电氧化物制成的层。
在一种优选的实施方案中,本发明的方法另外包含在步骤a)之前,在载体上沉积的球形粒子层上沉积由透明的导电氧化物制成的第二层的步骤,该透明的导电氧化物等同于或者不同于形成第一TCO层的透明的导电氧化物,这个层与所述层接触的表面具有与它所接触的所形成的表面相同的形状。
根据第一变化,该一层或多层的透明的导电氧化物是通过物理气相沉积(PVD)来沉积的。
优选和根据第二变化,该一层或多层的透明的导电氧化物是通过化学气相沉积(CVD)来沉积的。
在本发明方法全部的变化中,所述载体是由选自下面的材料制成的:玻璃、p-掺杂的硅、n-掺杂的硅、氢化的无定形硅(a-Si:H)、Cu(InGa)Se2、单晶硅或者多晶硅、CdS、或者有机电池层。
同样优选的,该球形粒子的直径是300nm-10μm。
最优选占球形粒子总群的至少10%和优选15%数目的粒子的直径是200nm-4μm,和占球形粒子总群的至少10%和优选15%数目的粒子的直径是4.5μm-12μm,其余的部分的群是由中间直径的粒子组成的。
另外,优选该球形粒子是由选自下面的材料制成:SiO2、ZnO、ZnO:Al、ZnO:B、SO2:F、ITO、氟-掺杂的氧化铟、In2O3:Mo(IMO)和ZnO:Ga。
关于透明的导电氧化物,它优选是选自ZnO:Al(AZO)、ZnO:B(BZO)、ZnO:Ga(GZO)、SnO2:F、In2O3:Sn(ITO)、ITO:ZnO、ITO:Ti、In2O3、In2O3:ZnO(IZO)、In2O3:F、In2O3:Mo(IMO)、In2O3:Ga、In2O3:Ti、In2O3:W、In2O3:Zr、In2O3:Nb、ZnO:(Al,F)和ZnO:(Ga,B)。
本发明还涉及一种太阳能电池,其包含本发明的基底或者是通过本发明的方法来获得的。
通过阅读下面的参考附图给出的示例性说明,本发明将更好理解,并且它的其他特征和优点将变得更加显而易见,在其中:
-图1表示了现有技术的a-Si:H太阳能电池的构造,其处于上层构造;
-图2表示了现有技术的CIGS太阳能电池的示意结构,其处于基底构造;
-图4表示了根据本发明的a-Si:H太阳能电池的结构示意,其处于上层构造;
-图5表示了根据本发明的CIGS太阳能电池的结构示意,其处于基底构造;
-图6表示了实施例1所用的二氧化硅珠的粒度分布;和
-图7表示了作为入射光波长的函数的雾度因子,其用下面的基底来获得:
-本发明的基底,具有单个尺寸或者多个尺寸的珠子;
-包含无纹理的透明的导电氧化物层的基底。
纹理化透明的导电氧化物层的光学响应通常是通过它的雾度值(即,光的散射因子)来量化的。
这个量是透射的散射光与透射的光的总量的比率。
已经广泛的证实了这个量在透明的导电氧化物(TCO)层纹理化时得以改进。
在下面,术语“纹理化”被理解为表示所产生的粗糙度,即,在TCO层中或者通过该层所形成的连续的凹陷和突起。
从图4和5中可见,本发明的基底包含在载体(参见图4和5中的1)上由透明的导电氧化物制成的至少一个散射层(参见图4和5中的2),与图1、2和3所示的现有技术的沉积的基底相同。但是,不同于图1、2和3所示的现有技术的基底,本发明的基底另外包含由选自电介质材料和透明的导电氧化物的材料制成的球形粒子的层,参见图4和5中的3。
明确的,将由材料例如诸如SiO2、ZnO、铟掺杂的氧化锡制成的球形粒子沉积到载体1和层2之间。将这些球形粒子的尺寸研磨成至少两个直径群。
换句话说,该形成层3的球形粒子并非全部具有相同的直径。
依靠这些粒子可变的尺寸,将散射光在宽的波长范围(即,350nm-1500nm)的透射效率进行了优化。
这些粒子的尺寸在300nm-10μm之间是可变的。因此获得了不同高度和宽度的突起和凹陷,这用欧洲专利申请1443527A1的方法是不可能的。当然也可以选择该电介质粒子的尺寸(直径)来选择精确的波长范围。
在一种优选的实施方案中,和为了在宽的波长范围350nm-1500nm中获得最佳的效率,占所用的球形粒子总群的至少10%和优选15%数目的粒子的直径是200nm-4μm,和占所用球形粒子总群的至少10%和优选15%数目的粒子的直径是4.5μm-12μm,其余是由中间直径的粒子组成的。
根据本发明的一种改进,在上述15%中,至少5%数目(相对于总群)的粒子的直径是300nm-3.5μm,和5%数目(相对于总群)的粒子的直径是4.5μm-μm。
为了进一步改进扩散透射效率,和在一种特别优选的实施方案中,该球形粒子没有彼此完全接触,和优选它们是全部彼此分离的。
这意味着,如图4和5中所见,这些球形粒子形成了单层,即,该球形粒子并非彼此叠置的。
该球形粒子优选是通过Langmuir-Blodgett类型的沉积来沉积的,其具有优点,即,使得大的面积得以廉价的处理,或者甚至通过用溶胶凝胶旋涂、浸涂来处理,由此精确的控制该球形粒子的尺寸和面密度。优选使用液体聚合物/球形粒子纳米复合材料,并且其的粒子浓度决定了所处理的基底表面上的最终密度。该聚合物溶剂然后通过热处理来蒸发。可以使用表面活性剂来促进粒子的良好分散。
球形粒子的这个层3然后用透明的导电氧化物层包覆。
如从图4和5中所见,透明的导电氧化物层2的形状是球形粒子的层3的表面的阴面。它在每个点上具有相同的厚度。它是等角沉积的。
作为透明的导电氧化物,可以使用本领域技术人员已知的任何透明的导电氧化物。作为例子,可以提到的是ZnO:Al、铟掺杂的氧化锡(ITO)、钼掺杂的氧化锡(IMO)、未掺杂的或者氟掺杂的SnO2(SnO2:F)、SnO2、ZnO:B、SnO2:F、ITO、氟-掺杂的氧化铟、In2O3:Mo(IMO)、ZnO:Ga。
在本发明的一种优选的变化中,本发明的装置另外在基底1和球形粒子的层3之间包括由透明的导电氧化物制成的第二层(参见图4和5中的4),该透明的导电氧化物等同于层2的导电氧化物,或者与之不同。
该透明的导电氧化物的层4选自与在层2中提及的那些相同的材料。
用于形成层2或者层4的该透明的导电氧化物可以通过物理气相沉积(PVD)或者通过化学气相沉积(CVD)而沉积。
这些技术使得由电介质材料制成的球形粒子包封到TCO薄膜中。该球形粒子是包覆的。
当该沉积是通过PVD进行时,TCO层2和/或4中的凹陷和突起的表面不具有“纹理化”,即,它优选是光滑的。
但是,为了获得TCO层2(其优选在它们形成的表面处是与球形粒子的形状匹配的,并且在每个点具有相同的厚度),它优选是使用CVD方法。在这种情况中,因为凹陷和突起的表面与球形粒子的层3的形状是匹配的,因此它们本身将具有粗糙度(纹理化)。
制造本发明基底的方法包含下面的步骤:
a)在载体1的至少一个表面上沉积选自电介质材料和透明的导电氧化物的材料制成的球形粒子的层3,并且其直径属于至少两个不同的直径群;和
b)在层3的空闲表面上沉积由透明的导电氧化物制成的层。
在一种优选的实施方案中,本发明的方法另外包含在步骤a)之前,沉积由透明的导电氧化物制成的层4的步骤,该导电氧化物等同于或者不同于形成层2的那些。
用于沉积层2和/或4和球形粒子的方法已经在上面进行了描述,并且形成层2和/或4和3的材料的性质也已经在上面进行了描述。
该球形粒子的尺寸也在上面进行了描述。
本发明的基底或者通过本发明的方法获得的基底特别适于形成由TCO制成的用于太阳能电池的散射层。
因此,本发明的另一主题是包含这样的基底的太阳能电池。
为了更好的理解本发明,现在将它能够给完全示例性的和非限制性的实施例来描述其实施方案。
实施例1:
生产由基于球形二氧化硅粒子的TCO制成的散射层:生产本发明的基底。
在第一步骤中,将100nm厚的用2.5wt%的铝掺杂的ZnO层通过磁控管溅射沉积到玻璃载体上。
接下来,将球形二氧化硅粒子(其的粒度分布表示在图6中)使用Langmuir-Blodgett方法进行沉积。
接下来,将球形粒子层用2.5%的Al掺杂的ZnO层(其是通过磁控管溅射来沉积的)进行覆盖。这个层的厚度是400nm。
实施例2
在这个实施例中,用2.5%的Al掺杂的第一ZnO层是使用磁控管溅射技术来沉积的。
所用的沉积参数是在紧下面给出的。
靶子 | ZnO:Al(2.5wt%) |
靶子直径 | 200mm |
基底 | Eagle XG玻璃 |
压力 | 0.15Pa |
Ar流速 | 20sccm |
移动 | 旋转-10rpm |
功率 | 500W |
功率密度 | 1.6W/cm2 |
靶子-基底距离 | 55mm |
时间 | 38min |
沉积速率 | 100nm/min |
接下来,沉积直径为1μm的单尺寸二氧化硅粒子。
这些粒子是使用Langmuir-Blodgett技术来沉积的。
接下来,将用2.5%Al掺杂的等角的200nm厚的第二ZnO层沉积到单层的二氧化硅粒子上,来完全覆盖它。
这个沉积是通过磁控管溅射来进行的。在这个沉积过程中所用的参数与实施例1中所用的那些相同。
结果
接下来,通过分光光度法测量雾度因子,用于穿过实施例1所获得的基底的入射光;并且为了对比,还测量了用AsahiHU结构获得的雾度因子,和用仅仅包含无“纹理化”的直接沉积到玻璃基底上的用2.5%的铝掺杂的ZnO层的结构的雾度因子,和根据本发明的,但是球形粒子是单尺寸的结构(例如实施例2所获得的结构)的雾度因子。
所获得的曲线表示在图7中。
从图7中可见,在玻璃上的仅仅用2.5%Al掺杂的ZnO层形成的结构不具有雾度因子。这是参照结构。
同等的,使用单尺寸球不会改进雾度因子。相反,使用本发明的基底,雾度因子在310-2300nm宽的波长范围内大于80%。
Claims (18)
1.一种基底,其包含由沉积在载体(1)至少一个表面上的由透明的导电氧化物(TCO)制成的至少一个散射层(2),特征在于它另外包含由选自电介质材料和透明的导电氧化物的材料制成的球形粒子的层(3),并且其直径属于至少两个不同的直径群,在由TCO制成的层(2)中,该由TCO制成的层(2)具有基本上恒定的厚度。
2.权利要求1所要求的基底,特征在于它在载体(1)和球形粒子的层(3)之间,另外包含由透明的导电氧化物制成的第二层(4),该透明的导电氧化物等同于或者不同于形成层(2)的透明的导电氧化物。
3.权利要求2所要求的基底,特征在于该第一和第二TCO层(2,4)包覆着球形粒子层(3)。
4.前述任一项权利要求所要求的基底,特征在于该载体(1)是由选自下面的材料制成:玻璃、p-掺杂的硅、n-掺杂的硅、氢化的无定形硅(a-Si:H)、Cu(In,Ga)Se2、单晶硅或者多晶硅、CdS、或者有机电池的层。
5.前述任一项权利要求所要求的基底,特征在于该球形粒子的直径是300nm-10μm。
6.前述任一项权利要求所要求的基底,特征在于在形成层(3)的球形粒子总群中,至少5%数目的所述的粒子具有比相对于球形粒子总数的至少5%数目的球形粒子的直径大或小多于500nm的直径。
7.前述任一项权利要求所要求的基底,特征在于该球形粒子是由选自下面的材料制成的:SiO2、ZnO、ZnO:Al、ZnO:B、SnO2:F、ITO、氟-掺杂的氧化铟、In2O3:Mo(IMO)和ZnO:Ga。
8.前述任一项权利要求所要求的基底,特征在于该透明的导电氧化物选自ZnO:Al(AZO)、ZnO:B(BZO)、ZnO:Ga(GZO)、SnO2:F、In2O3:Sn(ITO)、ITO:ZnO、ITO:Ti、In2O3、In2O3:ZnO(IZO)、In2O3:F、In2O3:Mo(IMO)、In2O3:Ga、In2O3:Ti、In2O3:W、In2O3:Zr、In2O3:Nb、ZnO:(Al,F)和ZnO:(Ga,B)。
9.一种制造基底的方法,该基底包含由透明的导电氧化物(TCO)制成的至少一个散射层(2),特征在于它包含下面的步骤:
a)在载体(1)的至少一个表面上沉积选自电介质材料和透明的导电氧化物的材料制成的球形粒子的层(3),并且其直径属于至少两个不同的直径群;和
b)在层(3)的空闲表面上沉积由透明的导电氧化物制成的、具有基本上恒定厚度的层(2)。
10.权利要求9所要求的方法,特征在于它另外在步骤a)之前包括,在基底(1)与球形电介质粒子层(3)之间,沉积由透明的导电氧化物制成的层(4)的步骤,该透明的导电氧化物等同于或者不同于形成第一层(2)的透明的导电氧化物,层(4)与层(3)接触的表面具有与它所接触的(3)所形成的表面相同的形状。
11.权利要求9和10任一项所要求的方法,特征在于该一层或多层的透明的导电氧化物是通过物理气相沉积(PVD)来沉积的。
12.权利要求9和10任一项所要求的方法,特征在于该一层或多层的透明的导电氧化物是通过化学气相沉积(CVD)来沉积的。
13.权利要求9-12任一项所要求的方法,特征在于该载体(1)是由选自下面的材料制成:玻璃、p-掺杂的硅、n-掺杂的硅、氢化的无定形硅(a-Si:H)、Cu(In,Ga)Se2、单晶硅或者多晶硅、CdS、或者有机电池的层。
14.权利要求9-13任一项所要求的方法,特征在于该球形粒子的直径是300nm-10μm。
15.权利要求9-14任一项所要求的方法,特征在于该球形粒子总群的至少10%和优选15%数目的粒子的直径是200nm-4μm,和该球形粒子总群的至少10%和优选15%数目的粒子的直径是4.5μm-12μm,所述群的其余部分是由中间直径的粒子组成的。
16.权利要求9-15任一项所要求的方法,特征在于该球形粒子是由选自下面的材料制成的:SiO2、ZnO、ZnO:Al、ZnO:B、SO2:F、ITO、氟-掺杂的氧化铟、In2O3:Mo(IMO)和ZnO:Ga。
17.权利要求9-16任一项所要求的方法,特征在于该透明的导电氧化物选自ZnO:Al(AZO)、ZnO:B(BZO)、ZnO:Ga(GZO)、SnO2:F、In2O3:Sn(ITO)、ITO:ZnO、ITO:Ti、In2O3、In2O3:ZnO(IZO)、In2O3:F、In2O3:Mo(IMO)、In2O3:Ga、In2O3:Ti、In2O3:W、In2O3:Zr、In2O3:Nb、ZnO:(Al,F)和ZnO:(Ga,B)。
18.太阳能电池,特征在于它包含权利要求1-8任一项所要求的基底或者是通过权利要求9-17任一项所要求的方法来获得的。
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PCT/IB2011/052738 WO2011161632A1 (fr) | 2010-06-23 | 2011-06-22 | Substrat comprenant une couche d'oxyde transparent conducteur et son procede de fabrication |
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CN104037247A (zh) * | 2013-03-07 | 2014-09-10 | 台积太阳能股份有限公司 | 具有高透射率结构的透明导电氧化物层及其制造方法 |
CN104576962A (zh) * | 2013-10-29 | 2015-04-29 | 原子能和能源替代品委员会 | 用于封装敏感器件的装置以及用于制备所述器件的方法 |
CN106630670A (zh) * | 2017-02-07 | 2017-05-10 | 肇庆学院 | 一种有序双层膜微球壳结构玻璃及其制造方法 |
CN110178187A (zh) * | 2017-01-31 | 2019-08-27 | 日东电工株式会社 | 透明导电性薄膜 |
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JP5808119B2 (ja) * | 2010-04-13 | 2015-11-10 | キヤノン株式会社 | 模型眼、光断層画像撮像装置の調整方法、及び評価方法 |
DE102012201688A1 (de) * | 2012-02-06 | 2013-08-08 | Robert Bosch Gmbh | Solarzelle und Verfahren zu deren Herstellung |
CN103579380A (zh) | 2012-08-09 | 2014-02-12 | 索尼公司 | 受光或者发光元件、太阳能电池、光传感器、发光二极管 |
CN103022255B (zh) * | 2012-12-27 | 2014-12-17 | 沈阳工程学院 | 一种在未引入电极的太阳能电池片上制备ZnO/Al薄膜的方法 |
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CN104037247A (zh) * | 2013-03-07 | 2014-09-10 | 台积太阳能股份有限公司 | 具有高透射率结构的透明导电氧化物层及其制造方法 |
CN104576962A (zh) * | 2013-10-29 | 2015-04-29 | 原子能和能源替代品委员会 | 用于封装敏感器件的装置以及用于制备所述器件的方法 |
CN104576962B (zh) * | 2013-10-29 | 2017-12-08 | 原子能和能源替代品委员会 | 用于封装敏感器件的装置以及用于制备所述器件的方法 |
CN110178187A (zh) * | 2017-01-31 | 2019-08-27 | 日东电工株式会社 | 透明导电性薄膜 |
CN110178187B (zh) * | 2017-01-31 | 2021-04-13 | 日东电工株式会社 | 透明导电性薄膜 |
CN106630670A (zh) * | 2017-02-07 | 2017-05-10 | 肇庆学院 | 一种有序双层膜微球壳结构玻璃及其制造方法 |
CN106630670B (zh) * | 2017-02-07 | 2022-09-09 | 肇庆学院 | 一种有序双层膜微球壳结构玻璃及其制造方法 |
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FR2961952A1 (fr) | 2011-12-30 |
KR20130098986A (ko) | 2013-09-05 |
JP2013529845A (ja) | 2013-07-22 |
FR2961952B1 (fr) | 2013-03-29 |
EP2586063A1 (fr) | 2013-05-01 |
EP2586063B1 (fr) | 2014-04-30 |
US20130092230A1 (en) | 2013-04-18 |
WO2011161632A1 (fr) | 2011-12-29 |
CN102947943B (zh) | 2016-11-09 |
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