CN102939406B - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
CN102939406B
CN102939406B CN201180029114.3A CN201180029114A CN102939406B CN 102939406 B CN102939406 B CN 102939406B CN 201180029114 A CN201180029114 A CN 201180029114A CN 102939406 B CN102939406 B CN 102939406B
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CN
China
Prior art keywords
container
introduction part
pipe arrangement
substrate
unstripped gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180029114.3A
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English (en)
Chinese (zh)
Other versions
CN102939406A (zh
Inventor
铃木康正
木村贤治
塚越和也
池长宣昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of CN102939406A publication Critical patent/CN102939406A/zh
Application granted granted Critical
Publication of CN102939406B publication Critical patent/CN102939406B/zh
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45578Elongated nozzles, tubes with holes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305Sulfides, selenides, or tellurides
    • C23C16/306AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN201180029114.3A 2010-06-14 2011-06-13 成膜装置 Active CN102939406B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010135503 2010-06-14
JP2010-135503 2010-06-14
PCT/JP2011/063483 WO2011158781A1 (ja) 2010-06-14 2011-06-13 成膜装置

Publications (2)

Publication Number Publication Date
CN102939406A CN102939406A (zh) 2013-02-20
CN102939406B true CN102939406B (zh) 2014-09-03

Family

ID=45348180

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180029114.3A Active CN102939406B (zh) 2010-06-14 2011-06-13 成膜装置

Country Status (5)

Country Link
JP (1) JP5478723B2 (ja)
KR (1) KR101553453B1 (ja)
CN (1) CN102939406B (ja)
TW (1) TWI496941B (ja)
WO (1) WO2011158781A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102106969B1 (ko) * 2013-02-26 2020-05-08 삼성디스플레이 주식회사 기판 열처리 장치 및 그 방법
KR102159868B1 (ko) * 2015-10-06 2020-09-24 가부시키가이샤 알박 혼합기, 진공 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW505542B (en) * 1999-02-04 2002-10-11 Steag Rtp Systems Gmbh Rapid thermal processing system and its apparatus and method
EP2309023A1 (en) * 2008-07-30 2011-04-13 Kyocera Corporation Deposition film forming apparatus and deposition film forming method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008129977A1 (ja) * 2007-04-17 2008-10-30 Ulvac, Inc. 成膜装置
JP5015085B2 (ja) * 2008-07-15 2012-08-29 シャープ株式会社 気相成長装置
JP5231117B2 (ja) * 2008-07-24 2013-07-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW505542B (en) * 1999-02-04 2002-10-11 Steag Rtp Systems Gmbh Rapid thermal processing system and its apparatus and method
JP2002536829A (ja) * 1999-02-04 2002-10-29 シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 急速熱処理(rtp)装置のための冷却シャワーヘッド
EP2309023A1 (en) * 2008-07-30 2011-04-13 Kyocera Corporation Deposition film forming apparatus and deposition film forming method

Also Published As

Publication number Publication date
WO2011158781A1 (ja) 2011-12-22
TWI496941B (zh) 2015-08-21
TW201211306A (en) 2012-03-16
CN102939406A (zh) 2013-02-20
JP5478723B2 (ja) 2014-04-23
KR20130027035A (ko) 2013-03-14
KR101553453B1 (ko) 2015-09-15
JPWO2011158781A1 (ja) 2013-08-19

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