CN102936485B - A kind of Wafer adhesive wax - Google Patents
A kind of Wafer adhesive wax Download PDFInfo
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- CN102936485B CN102936485B CN201110234279.6A CN201110234279A CN102936485B CN 102936485 B CN102936485 B CN 102936485B CN 201110234279 A CN201110234279 A CN 201110234279A CN 102936485 B CN102936485 B CN 102936485B
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- wax
- colophonium
- wafer
- softening point
- wafer adhesive
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Abstract
It is an object of the invention to open a kind of Wafer adhesive wax, it comprises following components in percentage by weight: microwax 1 5%, synthetic wax 5 10%, amide waxe 5 10%, Colophonium 65 75% and modified rosin 5 10%；Compared with prior art, softening point at 80 90 DEG C, 110 DEG C of degree kinematic viscosity 100 200mm2/ s, tensile shear strength is more than 30Kg/cm2, softening point is moderate, viscosity and good fluidity, and cohesiveness is high, it is achieved the purpose of the present invention.
Description
Technical field
The present invention relates to a kind of bonding wax, particularly to a kind of crystalline substance with high tensile shear strength
The bonding wax of sheet.
Background technology
In the polishing process of various wafers, the more commonly used polishing mode is without wax polishing and to have
Wax polishing.Along with the continuous increase of single crystal diameter, wax polishing is had progressively to become major diameter wafer
Mainly polish mode.For the wafer of thinner thickness, due to have wax polishing be by
Wafer is completely fixed on substrate, has the advantages that to be difficult to fragment in polishing process, the most also
Become the main polishing mode of thinner thickness wafer.Above-mentioned " wax " is really the bonding of the content of wax
Material, actually in the course of processing of wafer, cutting and polishing process are required for entering wafer
Being adhesively fixed of row high intensity, the adhesives of current main flow be all Colophonium add paraffin allotment and
Become.
As the patent of invention of Chinese Patent Application No. 200910030364.3 discloses a kind of bonding
Wafer glue: the weight ratio of each composition is No. 85 ceresine: Colophonium: PUR=5: 3: 5.
The patent of invention of China Patent Publication No. CN101984012A discloses one has wax to add
Work wafer binding agent and preparation method thereof, this binding agent is mainly by paraffin, Colophonium and Lac group
Becoming, wherein paraffin, Colophonium, Lac are by 20-50: the quality of 40-75: 5-20 compares proportioning.
The patent of invention of the Chinese patent patent No. 00117420.7 discloses a kind of containing Colophonium and purple
The accurate Magnetitum cutting hot-melt adhesive powder of glue and preparation method thereof, this hot-melt adhesive powder counts by weight,
Composition include Colophonium 30-50 part, lac 30-50 part, newtrex 3-8 part, through silicone oil table
Precipitated calcium carbonate 2-5 part that face processes.
Bonding wax in above-mentioned patent be mainly composed of paraffin, Colophonium, purple (worm) glue and poly-
Closing Colophonium etc., wherein Colophonium plays main viscous effect, and purple (worm) glue, newtrex are main
Thering is provided cohesive strength and certain viscosity, paraffin is to reduce viscosity (improving the mobility of glue) to make
With.Colophonium viscosity is good, but softening point is low, and in the case of particularly adding paraffin, softening point is only
Can reach 55 DEG C-65 DEG C, in the course of processing, chip temperature raises, and causes adhesive strength drastically
Decline, so newtrex or lac must be added.Newtrex and lac cohesiveness are strong, soften
Point is high, up to 145 DEG C, can be effectively improved softening point and the cohesive strength of Wafer adhesive wax, but
Melting kinematic viscosity is big, and mobility is deteriorated, and adhesive effect can be brought to decline, mobility to be improved,
Can only increase paraffin content or improve applying glue temperature, increase paraffin content then softening point, cohesion by force
Degree and viscosity reduce, and improve applying glue temperature (such as 120 DEG C) then Colophonium perishable, and loss is viscous
Property, so newtrex and lac addition are restricted.Someone is replaced with above-mentioned paraffin poly-
Ethylene waxes or Fischer Tropsch waxes, cohesiveness increases, but tests data from tensile shear strength
See, the most tangible raising of bonding force.
In terms of the requirement of bonding wafer, need a kind of softening point moderate, viscosity and good fluidity,
The bonding wax that cohesiveness is high.
When usual bonding wax uses, temperature controls when exceeding softening point 30 DEG C preferably, less than this
Starting crystallization occur in individual temperature then wax, wellability declines, and bonding force declines；Exceed this temperature
Degree, then kinematic viscosity is the lowest, and mobility is too high, causes bonding plane the thinnest, and adhesive strength declines.
Although softening point is the highest more heatproof, but use hot-water soak, by wafer after the processing of some wafer
Bonding wax maceration remove down, then require that the softening point of bonding wax is no more than 100 DEG C.And contain
The bonding wax use temperature of Colophonium is no more than 120 DEG C, typically at about 110 DEG C, thus viscous
The softening point of grafting wax is no more than 90 DEG C, and general control is at about 80 DEG C.
Mobility is to represent with kinematic viscosity index, when the kinematic viscosity of a certain temperature is the lowest,
Mobility at a temperature of being then somebody's turn to do is the best.When transporting kinetic viscosity height under bonding temp, the most bonding wax and
The wellability of wafer declines substantially, and bonding force declines.As it was previously stated, kinematic viscosity is not more
Low the best, from using summary of experience, at 110 DEG C, kinematic viscosity controls at 100-200mm2/ s is
Good.
Test it can be seen that major part is all cohesional failure from actual tensile shear strength, the most viscous
Connect layer cohesive strength inadequate.Knowable to the shearing force that polishing produces, tensile shear strength index is not
Can be less than 20Kg/cm2.But the bonding wax of current disclosed technology, after tested, tensile shear
Intensity is generally at 12-22Kg/cm2, so having fashion sometimes in the actual wafer course of processing
Bad, basic reason is exactly that bonding force is inadequate, i.e. tensile shear strength is not high enough.
In sum, for the defect of prior art, it is accordingly required in particular to a kind of Wafer adhesive wax, with
Solve above-mentioned problem.
Summary of the invention
It is an object of the invention to provide a kind of Wafer adhesive wax, solve lacking of above-mentioned prior art
Falling into, softening point is moderate, viscosity and good fluidity, and cohesiveness is high.
Technical problem solved by the invention can realize by the following technical solutions:
A kind of Wafer adhesive wax, it is characterised in that it comprises following components in percentage by weight:
Microwax 1-5%, synthetic wax 5-10%, amide waxe 5-10%, Colophonium 50-75% and modification pine
Fragrant 5-10%.
In one embodiment of the invention, described synthetic wax uses Fischer Tropsch waxes, molecular weight
Narrowly distributing, melt viscosity is low, can effectively reduce the kinematic viscosity under molten state, and accelerate
The setting rate of Wafer adhesive wax.
In one embodiment of the invention, described amide waxe uses N.N '-1,2-second diyl
Double 12 (carbon) amide or N.N '-1, double 18 (carbon) amide of 2-second diyl, effectively carry
The tensile shear strength of high Wafer adhesive wax.
In one embodiment of the invention, described Colophonium uses hydrogenated rosin, it is provided that wafer glues
The main viscosity of grafting wax, has more preferable non-oxidizability and anti-crystallization.
In one embodiment of the invention, described modified rosin uses newtrex or Colophonium season
Doutrate, except improving the cohesive strength of Wafer adhesive wax, also can improve bonding force, more main
Want is the compatibility promoting Colophonium and amide waxe, it is to avoid Colophonium and amide under molten state
Wax layering or the possibility of crystallization.
In one embodiment of the invention, the softening point of described Wafer adhesive wax at 80-90 DEG C,
110 DEG C of degree kinematic viscosity 100-200mm2/ s, tensile shear strength is more than 30Kg/cm2。
The Wafer adhesive wax of the present invention, compared with prior art, softening point at 80-90 DEG C, 110
DEG C degree kinematic viscosity 100-200mm2/ s, tensile shear strength is more than 30Kg/cm2, softening point
Moderate, viscosity and good fluidity, cohesiveness is high, it is achieved the purpose of the present invention.
The feature of the present invention see the detailed description of following preferable embodiment and obtains clear
Ground is understood.
Detailed description of the invention
For the technological means making the present invention realize, creation characteristic, reach purpose and be prone to effect
Understand and understand, the present invention is further elucidated below.
The Wafer adhesive wax of the present invention, it comprises following components in percentage by weight: microwax
1-5%, synthetic wax 5-10%, amide waxe 5-10%, Colophonium 65-75% and modified rosin 5-10%.
Wherein, described microwax can each component of effectively plasticising Wafer adhesive wax, reduce wafer glue
Kinematic viscosity under grafting wax fragility and molten state, and increase the tack of Colophonium, according to need
High-melting-point hard microwax to be used.
Described synthetic wax uses Fischer Tropsch waxes, and narrow molecular weight distribution, melt viscosity is low, can have
Effect reduces the kinematic viscosity under molten state, and the setting rate of the bonding wax of faster wafer.
Described amide waxe employing N.N '-1, double 12 (carbon) amide of 2-second diyl or N.N '-1,
Double 18 (carbon) amide of 2-second diyl, amide waxe have high-melting-point and in molten mass low-viscosity
Peculiar property, particularly with rosinous material coordinate, good fluidity under molten state, infiltration
Property is splendid, and main cohesive strength is the highest, and the tensile shear being effectively improved Wafer adhesive wax is strong
Degree.
Described Colophonium uses hydrogenated rosin, it is provided that the main viscosity of Wafer adhesive wax, has more preferably
Non-oxidizability and anti-crystallization.
Described modified rosin uses newtrex or pentalyn, glues except improving wafer
The cohesive strength of grafting wax, also can improve bonding force, more importantly promote Colophonium and amide waxe
The compatibility, it is to avoid Colophonium and amide waxe layering or the possibility of crystallization under molten state.
The softening point of described Wafer adhesive wax at 80-90 DEG C, 110 DEG C of degree kinematic viscositys
100-200mm2/ s, tensile shear strength is more than 30Kg/cm2。
Embodiment 1:
The Wafer adhesive wax of the present invention comprises following components in percentage by weight: microwax 5%,
Synthetic wax 10%, amide waxe 10%, Colophonium 65% and modified rosin 10%.
The softening point of described Wafer adhesive wax at 89 DEG C, 110 DEG C of degree kinematic viscosity 156mm2/ s,
Tensile shear strength is 42Kg/cm2。
Embodiment 2:
The Wafer adhesive wax of the present invention comprises following components in percentage by weight: microwax 5%,
Synthetic wax 10%, amide waxe 5%, Colophonium 70% and modified rosin 10%.
The softening point of described Wafer adhesive wax at 84 DEG C, 110 DEG C of degree kinematic viscosity 137mm2/ s,
Tensile shear strength is 32Kg/cm2。
Embodiment 3:
The Wafer adhesive wax of the present invention comprises following components in percentage by weight: microwax 5%,
Synthetic wax 5%, amide waxe 10%, Colophonium 75% and modified rosin 5%.
The softening point of described Wafer adhesive wax at 87 DEG C, 110 DEG C of degree kinematic viscosity 185mm2/ s,
Tensile shear strength is 39Kg/cm2。
Embodiment 4:
The Wafer adhesive wax of the present invention comprises following components in percentage by weight: microwax 1%,
Synthetic wax 5%, amide waxe 10%, Colophonium 75% and modified rosin 9%.
The softening point of described Wafer adhesive wax at 88 DEG C, 110 DEG C of degree kinematic viscosity 198mm2/ s,
Tensile shear strength is 38Kg/cm2。
Embodiment 5:
The Wafer adhesive wax of the present invention comprises following components in percentage by weight: microwax 3%,
Synthetic wax 8%, amide waxe 8%, Colophonium 73% and modified rosin 8%.
The softening point of described Wafer adhesive wax at 88 DEG C, 110 DEG C of degree kinematic viscosity 169mm2/ s,
Tensile shear strength is 36Kg/cm2。
The above-mentioned ultimate principle that the present invention has been shown and described and principal character and the present invention's is excellent
Point.Skilled person will appreciate that of the industry, the present invention is not restricted to the described embodiments, on
State the principle that the present invention is simply described described in embodiment and description, without departing from the present invention
On the premise of spirit and scope, the present invention also has various changes and modifications, and these change and change
Entering and both fall within scope of the claimed invention, claimed scope is by appended power
Profit claim and equivalent thereof define.
Claims (1)
1. a Wafer adhesive wax, it is characterised in that it comprises following components in percentage by weight: crystallite
Wax 1-5%, synthetic wax 5-10%, amide waxe 5-10%, Colophonium 65-75% and modified rosin 5-10%；
Described synthetic wax uses Fischer Tropsch waxes；
Described amide waxe uses N, N '-1, double 18 (carbon) amide of 2-second diyl；
Described Colophonium uses hydrogenated rosin；
Described modified rosin uses newtrex or pentalyn；
The softening point of described Wafer adhesive wax at 80-90 DEG C, 110 DEG C of degree kinematic viscosity 100-200mm2/ s, draws
Stretch shear strength more than 30kg/cm2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110234279.6A CN102936485B (en) | 2011-08-16 | 2011-08-16 | A kind of Wafer adhesive wax |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110234279.6A CN102936485B (en) | 2011-08-16 | 2011-08-16 | A kind of Wafer adhesive wax |
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| CN102936485A CN102936485A (en) | 2013-02-20 |
| CN102936485B true CN102936485B (en) | 2016-08-10 |
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| CN201110234279.6A Active CN102936485B (en) | 2011-08-16 | 2011-08-16 | A kind of Wafer adhesive wax |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103232833B (en) * | 2013-05-02 | 2016-06-29 | 衢州飞瑞特种陶瓷有限公司 | The Formula of paraffin adhesive that a kind of special cermacis is bonding with iron plate |
| CN104004494A (en) * | 2014-06-09 | 2014-08-27 | 成都泰美克晶体技术有限公司 | Quartz wafer and crystal lump adhesive for surface mounted device (SMD) and preparation technology thereof |
| CN109628018B (en) * | 2018-11-29 | 2021-03-30 | 康威通信技术股份有限公司 | Method for applying oxidized PE wax to sealing protection of circuit board |
| CN113348951A (en) * | 2021-07-22 | 2021-09-07 | 水利部沙棘开发管理中心（水利部水土保持植物开发管理中心) | High-stem-cutting rejuvenation method for sea buckthorn |
| CN114634793A (en) * | 2022-03-23 | 2022-06-17 | 福州硕榕光电有限公司 | Optical disc wax and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101367999A (en) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | Wax for micro-electronic product and method of producing the same |
| CN101510516A (en) * | 2009-03-20 | 2009-08-19 | 南京德研电子有限公司 | Method and apparatus for bonding wafer |
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2011
- 2011-08-16 CN CN201110234279.6A patent/CN102936485B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101367999A (en) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | Wax for micro-electronic product and method of producing the same |
| CN101510516A (en) * | 2009-03-20 | 2009-08-19 | 南京德研电子有限公司 | Method and apparatus for bonding wafer |
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Address after: Suzhou City, Jiangsu province 215151 Suzhou Xuguan Economic Development Zone hu Qing Road No. 1 Applicant after: JIANGSU TAIER NEW MATERIAL TECHNOLOGY CO., LTD. Address before: Suzhou high tech Zone and Xushuguan Town Road Suzhou city Jiangsu province 215151 No. 26 Applicant before: Jiangsu Tai'er New Material Technology Co., Ltd. |
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