CN102936485A - Wafer adhesive wax - Google Patents
Wafer adhesive wax Download PDFInfo
- Publication number
- CN102936485A CN102936485A CN2011102342796A CN201110234279A CN102936485A CN 102936485 A CN102936485 A CN 102936485A CN 2011102342796 A CN2011102342796 A CN 2011102342796A CN 201110234279 A CN201110234279 A CN 201110234279A CN 102936485 A CN102936485 A CN 102936485A
- Authority
- CN
- China
- Prior art keywords
- wax
- rosin
- bonding
- bonding wafer
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Adhesives Or Adhesive Processes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention aims to disclose a wafer adhesive wax, comprising the following components of, by weight, 1-5% of a microcrystalline wax, 5-10 % of a synthetic wax, 5-10% of a amide wax, 65-75% of rosin and 5-10% of a modified rosin. Compared with a conventional wafer adhesive wax, the wafer adhesive wax provided by the invention has a moderate softening point, good viscosity and fluidity and high cohesive force. The softening point is 80-90 DEG C; kinematic viscosity is 100-200 mm<2>/s at a temperature of 110 DEG C; and the tensile shear strength is higher than 30 Kg/cm<2>. The wafer adhesive wax can realize the object of the invention.
Description
Technical field
The present invention relates to a kind of bonding wax, particularly a kind of bonding wafer wax with high tensile shear strength.
Background technology
In the polishing process of various wafers, relatively polishing mode commonly used is without wax polishing and wax polishing is arranged.Along with the continuous increase of single crystal diameter, there is wax polishing progressively to become the main polishing mode of major diameter wafer.Simultaneously, for the wafer of thinner thickness, be that wafer is completely fixed on the substrate because wax polishing being arranged, have the advantages that in polishing process, to be difficult for fragment, therefore also become the main polishing mode of thinner thickness wafer.Above-mentioned " wax " is actual to be the adhesives of the content of wax, and in fact in the course of processing of wafer, cutting and polishing process all need wafer is carried out high-intensity being adhesively fixed, and the adhesives of main flow all is that rosin adds the paraffin allotment and forms at present.
Patent of invention such as Chinese patent application numbers 200910030364.3 discloses a kind of bonding wafer glue: each weight ratio that forms is No. 85 ceresine: rosin: hot melt adhesive=5: 3: 5.
The patent of invention of China Patent Publication No. CN101984012A discloses a kind of wax processed wafer binding agent and preparation method thereof that has, this binding agent mainly is comprised of paraffin, rosin and shellac, and wherein paraffin, rosin, shellac compare proportioning by the quality of 20-50: 40-75: 5-20.
The patent of invention of the Chinese patent patent No. 00117420.7 discloses a kind of accurate magnetite cutting hot-melt adhesive powder and method for making thereof that contains rosin and lac, this hot-melt adhesive powder is counted by weight, forms and to comprise rosin 30-50 part, lac 30-50 part, polymerized rosin 3-8 part, through silicone oil surface-treated light calcium carbonate 2-5 part.
The main component of the bonding wax in the above-mentioned patent is paraffin, rosin, purple (worm) glue and polymerized rosin etc., wherein rosin plays main viscous effect, purple (worm) glue, polymerized rosin mainly provide cohesive strength and certain viscosity, and paraffin is for reducing viscosity (improving the flowability of glue) effect.Rosin viscosity is good, but softening temperature is low, particularly adds in the situation of paraffin, and softening temperature can only reach 55 ℃-65 ℃, and chip temperature raises in the course of processing, causes bonding strength sharply to descend, so must add polymerized rosin or lac.Polymerized rosin and lac force of cohesion are strong, and softening temperature is high, can reach 145 ℃, but softening temperature and the cohesive strength of Effective Raise bonding wafer wax, but melting kinematic viscosity is large, and mobile variation can bring adhesive effect to descend, improve flowability, can only increase paraffinicity or improve the applying glue temperature, increase paraffinicity then softening temperature, cohesive strength and viscosity reduction, then rosin is perishable to improve applying glue temperature (such as 120 ℃), loss viscosity is so polymerized rosin and lac addition are restricted.Someone is replaced with polyethylene wax or Fischer-Tropsch synthetic wax to above-mentioned paraffin, and force of cohesion increases, but from the tensile shear strength test data, the not tangible raising of bonding force.
From the requirement of bonding wafer, need a kind of softening temperature moderate, viscosity and good fluidity, the bonding wax that force of cohesion is high.
Temperature was controlled at when exceeding 30 ℃ of softening temperatures as well when common bonding wax used, and was lower than this temperature and then began to occur crystallization in the wax, and wetting property descends, bonding force decline; Exceed this temperature, then kinematic viscosity is too low, and is mobile too high, causes bonding plane too thin, and bonding strength descends.Although the more high more heatproof of softening temperature adopts hot-water soak after some wafer process, except lower, then require the softening temperature of bonding wax should not be above 100 ℃ the bonding wax maceration on the wafer.And the bonding wax use temperature that contains rosin should not surpass 120 ℃, and generally about 110 ℃, so the softening temperature of bonding wax should not surpass 90 ℃, general control is about 80 ℃.
Flowability is to represent with the kinematic viscosity index, and when the kinematic viscosity of a certain temperature is lower, then the flowability under this temperature is better.When kinetic viscosity was high under the fortune bonding temp, then the wetting property of bonding wax and wafer descended obviously, and bonding force descends.As previously mentioned, kinematic viscosity neither be more low better, sums up from use experience, and 110 ℃ of lower kinematic viscosity are controlled at 100-200mm
2/ s is for well.
Can find out from actual tensile shear strength test, major part all is cohesive failure, and namely the adhesive linkage cohesive strength is inadequate.The shearing force that produces from polishing as can be known, the tensile shear strength index can not be lower than 20Kg/cm
2But the bonding wax of present disclosed technology, after tested, tensile shear strength is generally at 12-22Kg/cm
2So, in the actual wafer course of processing, there is fashion sometimes bad, basic reason is exactly that bonding force is inadequate, and namely tensile shear strength is not high enough.
In sum, for the defective of prior art, need especially a kind of bonding wafer wax, to solve above-mentioned problem.
Summary of the invention
The object of the present invention is to provide a kind of bonding wafer wax, solve the defective of above-mentioned prior art, softening temperature is moderate, viscosity and good fluidity, and force of cohesion is high.
Technical problem solved by the invention can realize by the following technical solutions:
A kind of bonding wafer wax is characterized in that, it comprises the component of following weight percent: Microcrystalline Wax 1-5%, synthetic wax 5-10%, amide waxe 5-10%, rosin 50-75% and modified rosin 5-10%.
In one embodiment of the invention, described synthetic wax adopts the Fischer-Tropsch synthetic wax, narrow molecular weight distribution, and melt viscosity is low, can effectively reduce the kinematic viscosity under the melted state, and the setting rate of the bonding wax of faster wafer.
In one embodiment of the invention, described amide waxe adopts N.N '-1, two 12 (carbon) acid amides of 2-second two bases or N.N '-1, two 18 (carbon) acid amides of 2-second two bases, the tensile shear strength of Effective Raise bonding wafer wax.
In one embodiment of the invention, described rosin adopts staybelite, and the main viscosity of bonding wafer wax is provided, and has better oxidation-resistance and anti-crystallization.
In one embodiment of the invention, described modified rosin adopts polymerized rosin or pentalyn, except improving the cohesive strength of bonding wafer wax, also can improve bonding force, main is the consistency that has promoted rosin and amide waxe, has avoided the possibility of rosin and amide waxe layering or crystallization under the melted state.
In one embodiment of the invention, the softening temperature of described bonding wafer wax is spent kinematic viscosity 100-200mm for 110 ℃ at 80-90 ℃
2/ s, tensile shear strength is greater than 30Kg/cm
2
Bonding wafer wax of the present invention, compared with prior art, softening temperature is spent kinematic viscosity 100-200mm for 110 ℃ at 80-90 ℃
2/ s, tensile shear strength is greater than 30Kg/cm
2, softening temperature is moderate, viscosity and good fluidity, and force of cohesion is high, realizes purpose of the present invention.
Characteristics of the present invention can be consulted the detailed description of following better embodiment and be obtained to be well understood to.
Embodiment
For technique means, creation characteristic that the present invention is realized, reach purpose and effect is easy to understand, below further set forth the present invention.
Bonding wafer wax of the present invention, it comprises the component of following weight percent: Microcrystalline Wax 1-5%, synthetic wax 5-10%, amide waxe 5-10%, rosin 65-75% and modified rosin 5-10%.
Wherein, described Microcrystalline Wax is each component of plasticising bonding wafer wax effectively, reduces the kinematic viscosity under bonding wafer wax fragility and the melted state, and increases the tack of rosin, adopts as required high-melting-point hard Microcrystalline Wax.
Described synthetic wax adopts the Fischer-Tropsch synthetic wax, narrow molecular weight distribution, and melt viscosity is low, can effectively reduce the kinematic viscosity under the melted state, and the setting rate of the bonding wax of faster wafer.
Described amide waxe adopts N.N '-1, two 12 (carbon) acid amides of 2-second two bases or N.N '-1, two 18 (carbon) acid amides of 2-second two bases, amide waxe has high-melting-point and the peculiar property of low-viscosity in molten mass, particularly with the rosin based material-mix, the melted state current downflow is good, wetting property is splendid, main cohesive strength is very high, the tensile shear strength of Effective Raise bonding wafer wax.
Described rosin adopts staybelite, and the main viscosity of bonding wafer wax is provided, and has better oxidation-resistance and anti-crystallization.
Described modified rosin adopts polymerized rosin or pentalyn, except improving the cohesive strength of bonding wafer wax, also can improve bonding force, main is the consistency that has promoted rosin and amide waxe, has avoided the possibility of rosin and amide waxe layering or crystallization under the melted state.
The softening temperature of described bonding wafer wax is spent kinematic viscosity 100-200mm for 110 ℃ at 80-90 ℃
2/ s, tensile shear strength is greater than 30Kg/cm
2
Embodiment 1:
Bonding wafer wax of the present invention comprises the component of following weight percent: Microcrystalline Wax 5%, synthetic wax 10%, amide waxe 10%, rosin 65% and modified rosin 10%.
The softening temperature of described bonding wafer wax is spent kinematic viscosity 156mm for 110 ℃ at 89 ℃
2/ s, tensile shear strength are 42Kg/cm
2
Embodiment 2:
Bonding wafer wax of the present invention comprises the component of following weight percent: Microcrystalline Wax 5%, synthetic wax 10%, amide waxe 5%, rosin 70% and modified rosin 10%.
The softening temperature of described bonding wafer wax is spent kinematic viscosity 137mm for 110 ℃ at 84 ℃
2/ s, tensile shear strength are 32Kg/cm
2
Embodiment 3:
Bonding wafer wax of the present invention comprises the component of following weight percent: Microcrystalline Wax 5%, synthetic wax 5%, amide waxe 10%, rosin 75% and modified rosin 5%.
The softening temperature of described bonding wafer wax is spent kinematic viscosity 185mm for 110 ℃ at 87 ℃
2/ s, tensile shear strength are 39Kg/cm
2
Embodiment 4:
Bonding wafer wax of the present invention comprises the component of following weight percent: Microcrystalline Wax 1%, synthetic wax 5%, amide waxe 10%, rosin 75% and modified rosin 9%.
The softening temperature of described bonding wafer wax is spent kinematic viscosity 198mm for 110 ℃ at 88 ℃
2/ s, tensile shear strength are 38Kg/cm
2
Embodiment 5:
Bonding wafer wax of the present invention comprises the component of following weight percent: Microcrystalline Wax 3%, synthetic wax 8%, amide waxe 8%, rosin 73% and modified rosin 8%.
The softening temperature of described bonding wafer wax is spent kinematic viscosity 169mm for 110 ℃ at 88 ℃
2/ s, tensile shear strength are 36Kg/cm
2
Above-mentioned demonstration and described ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; that describes in above-described embodiment and the specification sheets just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications; these changes and improvements all fall in the claimed scope of the invention, and the claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (6)
1. a bonding wafer wax is characterized in that, it comprises the component of following weight percent: Microcrystalline Wax 1-5%, synthetic wax 5-10%, amide waxe 5-10%, rosin 65-75% and modified rosin 5-10%.
2. bonding wafer wax as claimed in claim 1 is characterized in that, described synthetic wax adopts the Fischer-Tropsch synthetic wax.
3. bonding wafer wax as claimed in claim 1 is characterized in that, described amide waxe adopts N.N '-1, two 12 (carbon) acid amides of 2-second two bases or N.N '-1, two 18 (carbon) acid amides of 2-second two bases.
4. bonding wafer wax as claimed in claim 1 is characterized in that, described rosin adopts staybelite.
5. bonding wafer wax as claimed in claim 1 is characterized in that, described modified rosin adopts polymerized rosin or pentalyn.
6. bonding wafer wax as claimed in claim 1 is characterized in that, the softening temperature of described bonding wafer wax is spent kinematic viscosity 100-200mm for 110 ℃ at 80-90 ℃
2/ s, tensile shear strength is greater than 30Kg/cm
2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110234279.6A CN102936485B (en) | 2011-08-16 | 2011-08-16 | A kind of Wafer adhesive wax |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110234279.6A CN102936485B (en) | 2011-08-16 | 2011-08-16 | A kind of Wafer adhesive wax |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102936485A true CN102936485A (en) | 2013-02-20 |
| CN102936485B CN102936485B (en) | 2016-08-10 |
Family
ID=47695409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110234279.6A Active CN102936485B (en) | 2011-08-16 | 2011-08-16 | A kind of Wafer adhesive wax |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102936485B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103232833A (en) * | 2013-05-02 | 2013-08-07 | 衢州飞瑞特种陶瓷有限公司 | Formula of paraffin adhesive for bonding special ceramics and iron plate |
| CN104004494A (en) * | 2014-06-09 | 2014-08-27 | 成都泰美克晶体技术有限公司 | Quartz wafer and crystal lump adhesive for surface mounted device (SMD) and preparation technology thereof |
| CN109628018A (en) * | 2018-11-29 | 2019-04-16 | 山东康威通信技术股份有限公司 | A method of oxidation PE wax is applied to circuit board sealing protection |
| CN113348951A (en) * | 2021-07-22 | 2021-09-07 | 水利部沙棘开发管理中心（水利部水土保持植物开发管理中心) | High-stem-cutting rejuvenation method for sea buckthorn |
| CN114634793A (en) * | 2022-03-23 | 2022-06-17 | 福州硕榕光电有限公司 | Optical disc wax and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101367999A (en) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | Wax for micro-electronic product and method of producing the same |
| CN101510516A (en) * | 2009-03-20 | 2009-08-19 | 南京德研电子有限公司 | Method and apparatus for bonding wafer |
-
2011
- 2011-08-16 CN CN201110234279.6A patent/CN102936485B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101367999A (en) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | Wax for micro-electronic product and method of producing the same |
| CN101510516A (en) * | 2009-03-20 | 2009-08-19 | 南京德研电子有限公司 | Method and apparatus for bonding wafer |
Non-Patent Citations (1)
| Title |
|---|
| 石军等: "《热熔胶黏剂实用手册》", 31 May 2004, 化学工业出版社 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103232833A (en) * | 2013-05-02 | 2013-08-07 | 衢州飞瑞特种陶瓷有限公司 | Formula of paraffin adhesive for bonding special ceramics and iron plate |
| CN104004494A (en) * | 2014-06-09 | 2014-08-27 | 成都泰美克晶体技术有限公司 | Quartz wafer and crystal lump adhesive for surface mounted device (SMD) and preparation technology thereof |
| CN109628018A (en) * | 2018-11-29 | 2019-04-16 | 山东康威通信技术股份有限公司 | A method of oxidation PE wax is applied to circuit board sealing protection |
| CN113348951A (en) * | 2021-07-22 | 2021-09-07 | 水利部沙棘开发管理中心（水利部水土保持植物开发管理中心) | High-stem-cutting rejuvenation method for sea buckthorn |
| CN114634793A (en) * | 2022-03-23 | 2022-06-17 | 福州硕榕光电有限公司 | Optical disc wax and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102936485B (en) | 2016-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102936485A (en) | Wafer adhesive wax | |
| CN104559860B (en) | A kind of low-temperature hot melt adhesive | |
| CN101928535A (en) | Hot melting pressure-sensitive adhesive for joint of cable semi-conductive tape and manufacture method thereof | |
| CN105111971A (en) | Compound type EVA (ethylene vinyl acetate copolymer) hot glue and preparation method thereof | |
| CN103881618B (en) | A kind of fast package hot melt adhesive and preparation method thereof | |
| CN101307214A (en) | Hot-fusible adhesive and method for preparing same | |
| CN104449509B (en) | A kind of high temperature resistant bonded adhesives | |
| CN102504725A (en) | Book side glue and production method thereof | |
| CN101948671B (en) | Adhesive for precision machining and environment-friendly cleaning method thereof | |
| CN103170757A (en) | Solder paste and preparation method thereof | |
| CN108864987A (en) | Hot melt adhesive for air conditioner internal unit | |
| CN102618212B (en) | Hot melt adhesive and preparation process and application thereof | |
| CN101857457A (en) | Transition layer for combination of ceramic composite substrate and metal and preparation method thereof | |
| CN104119807B (en) | A kind of gluing hot melt adhesive special of notebook of the gluing hot melt adhesive special of notebook containing multiple fiber | |
| CN104087206B (en) | A kind of bonding cable heat shrinkage bush hot melt adhesive | |
| CN102568650B (en) | Silver electrode paste for negative temperature coefficient (NTC) thermistors and preparation method thereof | |
| CN105111968B (en) | Low-density packaging hot melt adhesive and preparation method thereof | |
| JP5465865B2 (en) | Hot melt adhesive composition | |
| CN108329875A (en) | A kind of high temperature resistant two-component bonded adhesives | |
| CN105195916A (en) | Lead-free solder alloy soldering paste | |
| CN104388019A (en) | Hot melt adhesive | |
| JP4420596B2 (en) | Method for producing hot melt adhesive | |
| CN109233706A (en) | A kind of overlay film cardboard box glue | |
| CN104559841A (en) | Hot-melt adhesive | |
| JP2004197012A (en) | Polyamide resin based hot melt adhesive composition for electromagnetic induction heating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: Suzhou City, Jiangsu province 215151 Suzhou Xuguan Economic Development Zone hu Qing Road No. 1 Applicant after: JIANGSU TAIER NEW MATERIAL TECHNOLOGY CO., LTD. Address before: Suzhou high tech Zone and Xushuguan Town Road Suzhou city Jiangsu province 215151 No. 26 Applicant before: Jiangsu Tai'er New Material Technology Co., Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: JIANGSU TAI ER NEW MATERIAL TECHNOLOGY CO., LTD. TO: JIANGSU TAIER NEW MATERIAL CO., LTD. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |