CN102931128B - Method for rounding edge corner of shallow groove separation - Google Patents
Method for rounding edge corner of shallow groove separation Download PDFInfo
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- CN102931128B CN102931128B CN201210496571.XA CN201210496571A CN102931128B CN 102931128 B CN102931128 B CN 102931128B CN 201210496571 A CN201210496571 A CN 201210496571A CN 102931128 B CN102931128 B CN 102931128B
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Abstract
The invention provides a method for rounding an edge corner of shallow groove separation, comprising the following steps of: step S1, depositing a liner oxidized layer and a hard mask layer on the surface of a substrate; step S2, forming an opening; step S3, etching to form a shallow groove; step S4, growing the liner oxidized layer in the shallow groove; furthermore, utilizing less hydrogen to dilute oxygen to anneal in a temperature rising process from a first temperature T1 to a second temperature T2 until a furnace temperature reaches to the second temperature T2; growing the liner oxidized layer at the second temperature T2 by adopting a wet oxygen manner; raising the temperature from the second temperature T2 to a third temperature T3 and growing the liner oxidized layer at the third temperature T3 by adopting a dry oxygen manner; step S5, depositing an insulating medium layer; step S6, chemically and mechanically milling the insulating medium layer; and step S7, obtaining the rounded shallow groove separation. According to the method for rounding the edge corner of the shallow groove separation, the defect generated at a top angle and a bottom angle of the shallow groove separation by stress can be eliminated, the bottom angle and the top angle of the shallow groove separation are rounded, the product yield is extremely improved and the stability of a device is improved.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly relate to a kind of shallow trench isolation from the method for corner sphering.
Background technology
Along with semiconductor device technology development and in proportion size reduce, the growth of shallow groove isolation layer is more and more difficult, is a very large challenge to the lifting of final yield.Shallow trench isolation layer affects the puncture voltage of grid oxide layer and the leakage current of device, if the corner of shallow trench isolation too sharply will cause defects of semiconductor device and stress to be concentrated, cause leakage current to become large, grid oxygen puncture voltage step-down, thus require shallow trench isolation from the corner of top and bottom try one's best sphering to meet the demand of device.
But traditional shallow groove isolation layer growth adopts traditional dry oxide growth mode mostly, the sphering process for corner, top and corner, bottom can not meet the demand of 90nm and following processing procedure.Refer to Fig. 9 (a), SEM collection of illustrative plates that Fig. 9 (b), Fig. 9 (a), Fig. 9 (b) are depicted as the shallow groove isolation layer of conventional dry oxygen pattern growth.The demand thickness of described conventional shallow trench separator is 100 dusts, and the corner that its SEM collection of illustrative plates shows this conventional shallow trench isolation 2 is sufficiently oily, and the part thickness of corner is relatively thin.In the process of puncture voltage test, corner can become the place the most easily punctured, thus has influence on the stability of device.
How to prepare and there is sphering corner, and the homogeneous shallow trench isolation of thickness is from becoming industry problem demanding prompt solution.
Therefore for prior art Problems existing, this case designer is by means of being engaged in the industry experience for many years, and active research improves, then had a kind of shallow trench isolation of the present invention from the method for corner sphering.
Summary of the invention
The present invention be directed in prior art, the conventional shallow trench isolated border the top of the horn that traditional shallow trench isolation obtains from preparation method is sharp, and the uneven first-class defect of thickness provide a kind of shallow trench isolation from the method for corner sphering.
In order to solve the problem, the invention provides a kind of shallow trench isolation from the method for corner sphering, described method comprises:
Perform step S1: provide Semiconductor substrate, and at described semiconductor substrate surface deposit cushion oxide layer successively and hard mask layer;
Perform step S2: remove described shallow trench isolation from the cushion oxide layer on corresponding region and hard mask layer, and form the opening exposing substrate;
Perform step S3: with described opening for mask, in described substrate etching formed shallow trench isolation from shallow trench;
Perform step S4: described shallow trench isolation from shallow trench inwall growth oxidation lining, the growth of described oxidation lining comprises further: the first, at described first temperature T
1to described second temperature T
2temperature-rise period in, adopt hydrogen and oxygen to anneal, until described furnace temperature reaches the second temperature T
2; The second, at described second temperature T
2the mode of lower employing wet oxygen grows described oxidation lining; Three, from described second temperature T
2be warming up to described 3rd temperature T
3, and at described 3rd temperature T
3the mode of the dry oxygen of lower employing grows described oxidation lining; Described first temperature T
1be arbitrary temperature value of 400 ~ 700 DEG C, described second temperature T
2be arbitrary temperature value of 700 ~ 900 DEG C, described 3rd temperature T
3it is arbitrary temperature value of 1000 ~ 1150 DEG C;
Perform step S5: deposit insulating medium layer in the shallow trench with oxidation lining, described insulating medium layer also covers described hard mask layer;
Perform step S6: insulating medium layer described in cmp, makes described grinding stop at described hard mask layer place;
Perform step S7: remove described hard mask layer and cushion oxide layer, obtain sphering shallow trench isolation from.
Alternatively, described front Rotating fields system by semiconductor technology prior to described semiconductor defect place Film preparation.
Alternatively, described second temperature T
2be 900 DEG C, described 3rd temperature T
3it is 1050 DEG C.
Alternatively, described first temperature T
1to described second temperature T
2temperature-rise period in, adopt hydrogen and oxygen to anneal, described hydrogen is 0.2Slm, and described oxygen is 0.3Slm.
Alternatively, described first temperature T
1to described second temperature T
2heating rate be 5 ~ 10 DEG C/min.
Alternatively, described second temperature T
2the mode of lower employing wet oxygen grows described oxidation lining, and described hydrogen is 3Slm, and described oxygen is 3Slm, and described igniting wet oxygen growth time is 3min.
Alternatively, described second temperature T
2be warming up to described 3rd temperature T
3, and adopting the mode of dry oxygen to grow described oxidation lining under described 3rd temperature T3, described dry oxygen is 9Slm.
Alternatively, described second temperature T
2to described 3rd temperature T
3heating rate be 2 DEG C/min.
Alternatively, described cushion oxide layer is silicon oxide layer.
Alternatively, described hard mask layer is silicon nitride layer.
In sum, shallow trench isolation of the present invention from the method for corner sphering by described first temperature T
1to described second temperature T
2temperature-rise period in, adopt hydrogen and oxygen to anneal, until described furnace temperature reaches the second temperature T
2, can eliminate described shallow trench isolation from drift angle and base angle place stress produce defect; At described second temperature T
2the mode of lower employing diluted in hydrogen wet oxygen grows described oxidation lining, can to described shallow trench isolation from base angle carry out sphering; From described second temperature T
2be warming up to described 3rd temperature T
3, and at described 3rd temperature T
3the mode of the dry oxygen of lower employing grows described oxidation lining, can to described shallow trench isolation from drift angle carry out sphering, and the shallow trench isolation obtained by the method for the invention is from having sphering corner, and thickness is homogeneous, greatly improve product yield and the stability improving device.
Accompanying drawing explanation
Figure 1 shows that shallow trench isolation of the present invention from the flow chart of method of corner sphering;
Figure 2 shows that the structural representation of the substrate with cushion oxide layer and hard mask layer;
Figure 3 shows that the structural representation of opening;
Figure 4 shows that shallow trench isolation from shallow ditch groove structure schematic diagram;
Figure 5 shows that the oxidation liner structure schematic diagram after sphering;
Figure 6 shows that dielectric packed layer structural representation;
Figure 7 shows that shallow trench isolation from structural representation;
Fig. 8 (a), Fig. 8 (b) be depicted as sphering shallow trench isolation that the present invention obtains from SEM figure;
Fig. 9 (a), Fig. 9 (b) are depicted as the SEM figure of conventional shallow trench isolation.
Embodiment
By describe in detail the invention technology contents, structural feature, reached object and effect, coordinate accompanying drawing to be described in detail below in conjunction with embodiment.
Refer to Fig. 1, Figure 1 shows that shallow trench isolation of the present invention from the flow chart of method of corner sphering.Described shallow trench isolation from the method for corner sphering, comprise the following steps:
Perform step S1: provide Semiconductor substrate, and at described semiconductor substrate surface deposit cushion oxide layer successively and hard mask layer;
Perform step S2: remove described shallow trench isolation from the cushion oxide layer on corresponding region and hard mask layer, and form the opening exposing substrate;
Perform step S3: with described opening for mask, in described substrate etching formed shallow trench isolation from shallow trench;
Perform step S4: described shallow trench isolation from shallow trench inwall growth oxidation lining, the growth of described oxidation lining comprises further: the first, at described first temperature T
1to described second temperature T
2temperature-rise period in, adopt hydrogen and oxygen to anneal, until described furnace temperature reaches the second temperature T
2; The second, at described second temperature T
2the mode of lower employing diluted in hydrogen wet oxygen grows described oxidation lining; Three, from described second temperature T
2be warming up to described 3rd temperature T
3, and at described 3rd temperature T
3the mode of the dry oxygen of lower employing grows described oxidation lining.
Perform step S5: deposit insulating medium layer in the shallow trench with oxidation lining, described insulating medium layer also covers described hard mask layer;
Perform step S6: insulating medium layer described in cmp, makes described grinding stop at described hard mask layer place;
Perform step S7: remove described hard mask layer, obtain sphering shallow trench isolation from.
Refer to Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, and continue to consult Fig. 1, Figure 2 shows that the structural representation of the substrate with cushion oxide layer and hard mask layer.Figure 3 shows that the structural representation of opening.Figure 4 shows that shallow trench isolation from shallow ditch groove structure schematic diagram.Figure 5 shows that the oxidation liner structure schematic diagram after sphering.Figure 6 shows that dielectric packed layer structural representation.Figure 7 shows that shallow trench isolation from structural representation.As execution mode particularly, described shallow trench isolation from the method for corner sphering, comprise the following steps:
Perform step S1: provide Semiconductor substrate 10, and at described Semiconductor substrate 10 surface deposit cushion oxide layer successively 11 and hard mask layer 12;
The silicon oxide layer that described cushion oxide layer 11 normally adopts thermal oxidation technology to be formed or the silicon oxide layer adopting high density plasma CVD technique to be formed.Described hard mask layer is such as the silicon nitride layer adopting chemical vapor deposition method to be formed.
Perform step S2: remove described shallow trench isolation from the cushion oxide layer 11 on region corresponding to 1 and hard mask layer 12, and form the opening 13 exposing substrate 10; The method of described formation opening 13 normally adopts dry etch process.
Perform step S3: with described opening 13 for mask, in described substrate 10, etching forms the shallow trench 14 of shallow trench isolation from 1; The technique of described formation shallow trench 14 adopts dry etch process usually.
Perform step S4: at the shallow trench 14 inwall growth oxidation lining 15 of described shallow trench isolation from 1, the growth of described oxidation lining 15 comprises further: the first, at described first temperature T
1to described second temperature T
2temperature-rise period in, adopt hydrogen and oxygen to anneal, until described furnace temperature reaches the second temperature T
2; The second, at described second temperature T
2the mode of lower employing diluted in hydrogen wet oxygen grows described oxidation lining 15; Three, from described second temperature T
2be warming up to described 3rd temperature T
3, and at described 3rd temperature T
3the mode of the dry oxygen of lower employing grows described oxidation lining 15.
Wherein, described first temperature T
1it is arbitrary temperature value of 400 ~ 700 DEG C.Described second temperature T
2it is arbitrary temperature value of 700 ~ 900 DEG C.Described 3rd temperature T
3it is arbitrary temperature value of 1000 ~ 1150 DEG C.In the present invention, preferably, described second temperature T
2it is 900 DEG C.Described 3rd temperature T
3it is 1050 DEG C.At described first temperature T
1to described second temperature T
2temperature-rise period in, adopt hydrogen and oxygen to anneal, described hydrogen is 0.2Slm, and described oxygen is 0.3Slm.Described first temperature T
1to described second temperature T
2heating rate be 5 ~ 10 DEG C/min.At described second temperature T
2the mode of lower employing diluted in hydrogen wet oxygen grows described oxidation lining 15, and described hydrogen is 3Slm, and described oxygen is 3Slm, and described igniting wet oxygen growth time is 3min.From described second temperature T
2be warming up to described 3rd temperature T
3, and at described 3rd temperature T
3the mode of the dry oxygen of lower employing grows described oxidation lining, and described dry oxygen is 9Slm.Described second temperature T
2to described 3rd temperature T
3heating rate be 2 DEG C/min.
Perform step S5: deposit insulating medium layer 16 in the shallow trench 14 with oxidation lining 15, described insulating medium layer 16 also covers described hard mask layer 12;
Described insulating medium layer 16 can be silicon dioxide layer; Described in deposit, the technique of insulating medium layer 16 such as adopts high-density plasma chemical vapor deposition technique.
Perform step S6: insulating medium layer 16 described in cmp, and grinding is stopped at described hard mask layer 12 place;
Perform step S7: remove described hard mask layer 12 and cushion oxide layer 11, obtain the shallow trench isolation of sphering from 1.
Refer to Fig. 8 (a), Fig. 8 (b), and combine and consult Fig. 7, Fig. 8 (a), Fig. 8 (b) be depicted as sphering shallow trench isolation that the present invention obtains from SEM figure.At described first temperature T
1to described second temperature T
2temperature-rise period in, adopt hydrogen and oxygen to anneal, until described furnace temperature reaches the second temperature T
2, the defect that the drift angle 17 of described shallow trench isolation from 1 and base angle 18 place stress produce can be eliminated.At described second temperature T
2the mode of lower employing wet oxygen grows described oxidation lining 15, can carry out sphering to the base angle 18 of described shallow trench isolation from 1; From described second temperature T
2be warming up to described 3rd temperature T
3, and at described 3rd temperature T
3the mode of the dry oxygen of lower employing grows described oxidation lining 15, can carry out sphering to the drift angle 17 of described shallow trench isolation from 1.
In sum, shallow trench isolation of the present invention from the method for corner sphering by described first temperature T
1to described second temperature T
2temperature-rise period in, adopt hydrogen and oxygen to anneal, until described furnace temperature reaches the second temperature T
2, can eliminate described shallow trench isolation from drift angle and base angle place stress produce defect; At described second temperature T
2the mode of lower employing low temperature wet oxygen grows described oxidation lining, can to described shallow trench isolation from base angle carry out sphering; From described second temperature T
2be warming up to described 3rd temperature T
3, and at described 3rd temperature T
3the mode of the dry oxygen of lower employing high temperature grows described oxidation lining, can to described shallow trench isolation from drift angle carry out sphering, and the shallow trench isolation obtained by the method for the invention is from having sphering corner, and thickness is homogeneous, greatly improve product yield and the stability improving device.
Those skilled in the art all should be appreciated that, without departing from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thus, if when any amendment or modification fall in the protection range of appended claims and equivalent, think that these amendment and modification are contained in the present invention.
Claims (9)
1. shallow trench isolation from the method for corner sphering, it is characterized in that, described method comprises:
Perform step S1: provide Semiconductor substrate, and at described semiconductor substrate surface deposit cushion oxide layer successively and hard mask layer;
Perform step S2: remove described shallow trench isolation from the cushion oxide layer on corresponding region and hard mask layer, and form the opening exposing substrate;
Perform step S3: with described opening for mask, in described substrate etching formed shallow trench isolation from shallow trench;
Perform step S4: described shallow trench isolation from shallow trench inwall growth oxidation lining, the growth of described oxidation lining comprises further: the first, at the first temperature T
1to the second temperature T
2temperature-rise period in, adopt diluted in hydrogen oxygen to anneal, until furnace temperature reaches the second temperature T
2; The second, at described second temperature T
2the mode of lower employing wet oxygen grows described oxidation lining; Three, from described second temperature T
2be warming up to the 3rd temperature T
3, and at described 3rd temperature T
3the mode of the dry oxygen of lower employing grows described oxidation lining; Described first temperature T
1be arbitrary temperature value of 400 ~ 700 DEG C, described second temperature T
2be arbitrary temperature value of 700 ~ 900 DEG C, described 3rd temperature T
3it is arbitrary temperature value of 1000 ~ 1150 DEG C;
Perform step S5: deposit insulating medium layer in the shallow trench with oxidation lining, described insulating medium layer also covers described hard mask layer;
Perform step S6: insulating medium layer described in cmp, makes described grinding stop at described hard mask layer place;
Perform step S7: remove described hard mask layer and cushion oxide layer, obtain sphering shallow trench isolation from.
2. shallow trench isolation as claimed in claim 1 from the method for corner sphering, it is characterized in that, described second temperature T
2be 900 DEG C, described 3rd temperature T
3it is 1050 DEG C.
3. shallow trench isolation as claimed in claim 1 from the method for corner sphering, it is characterized in that, described first temperature T
1to described second temperature T
2temperature-rise period in, adopt hydrogen and oxygen to anneal, described hydrogen is 0.2Slm, and described oxygen is 0.3Slm.
4. shallow trench isolation as claimed in claim 3 from the method for corner sphering, it is characterized in that, described first temperature T
1to described second temperature T
2heating rate be 5 ~ 10 DEG C/min.
5. shallow trench isolation as claimed in claim 4 from the method for corner sphering, it is characterized in that, described second temperature T
2the mode of lower employing wet oxygen grows described oxidation lining, and described hydrogen is 3Slm, and described oxygen is 3Slm, and igniting wet oxygen growth time is 3min.
6. shallow trench isolation as claimed in claim 5 from the method for corner sphering, it is characterized in that, described second temperature T
2be warming up to described 3rd temperature T
3, and at described 3rd temperature T
3the mode of the dry oxygen of lower employing grows described oxidation lining, and described dry oxygen is 9Slm.
7. shallow trench isolation as claimed in claim 6 from the method for corner sphering, it is characterized in that, described second temperature T
2to described 3rd temperature T
3heating rate be 2 DEG C/min.
8. shallow trench isolation as claimed in claim 1 from the method for corner sphering, it is characterized in that, described cushion oxide layer is silicon oxide layer.
9. shallow trench isolation as claimed in claim 1 from the method for corner sphering, it is characterized in that, described hard mask layer is silicon nitride layer.
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| CN108447770B (en) * | 2018-03-08 | 2020-07-28 | 清华大学 | Preparation method of silicon dioxide film |
| CN112447507B (en) * | 2019-08-30 | 2024-06-18 | 株洲中车时代半导体有限公司 | GOI test sample wafer manufacturing method for improving breakdown characteristics of trench gate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6051478A (en) * | 1997-12-18 | 2000-04-18 | Advanced Micro Devices, Inc. | Method of enhancing trench edge oxide quality |
| US6387777B1 (en) * | 1998-09-02 | 2002-05-14 | Kelly T. Hurley | Variable temperature LOCOS process |
| DE19721114B4 (en) * | 1997-05-20 | 2004-02-12 | Siced Electronics Development Gmbh & Co. Kg | Process for producing an oxide layer on silicon carbide and use of the process |
| CN101335228A (en) * | 2007-06-25 | 2008-12-31 | 联华电子股份有限公司 | Seamless shallow groove isolation manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970006216B1 (en) * | 1994-03-11 | 1997-04-24 | 현대전자산업 주식회사 | Field oxidation film forming method of semiconductor device |
| US20020197823A1 (en) * | 2001-05-18 | 2002-12-26 | Yoo Jae-Yoon | Isolation method for semiconductor device |
| KR100554836B1 (en) * | 2003-06-30 | 2006-03-03 | 주식회사 하이닉스반도체 | Method of manufacturing flash memory device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19721114B4 (en) * | 1997-05-20 | 2004-02-12 | Siced Electronics Development Gmbh & Co. Kg | Process for producing an oxide layer on silicon carbide and use of the process |
| US6051478A (en) * | 1997-12-18 | 2000-04-18 | Advanced Micro Devices, Inc. | Method of enhancing trench edge oxide quality |
| US6387777B1 (en) * | 1998-09-02 | 2002-05-14 | Kelly T. Hurley | Variable temperature LOCOS process |
| CN101335228A (en) * | 2007-06-25 | 2008-12-31 | 联华电子股份有限公司 | Seamless shallow groove isolation manufacturing method |
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