CN102918634A - 激光能量穿透停止层的使用以在激光刻划多层图案化工件中达到最小化碎片产生 - Google Patents
激光能量穿透停止层的使用以在激光刻划多层图案化工件中达到最小化碎片产生 Download PDFInfo
- Publication number
- CN102918634A CN102918634A CN2011800266974A CN201180026697A CN102918634A CN 102918634 A CN102918634 A CN 102918634A CN 2011800266974 A CN2011800266974 A CN 2011800266974A CN 201180026697 A CN201180026697 A CN 201180026697A CN 102918634 A CN102918634 A CN 102918634A
- Authority
- CN
- China
- Prior art keywords
- laser
- mechanicalness
- layer
- weak
- partition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000003989 dielectric material Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 38
- 238000005520 cutting process Methods 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000005192 partition Methods 0.000 claims description 17
- 238000010276 construction Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 71
- 235000012239 silicon dioxide Nutrition 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052799 carbon Inorganic materials 0.000 description 19
- 239000012634 fragment Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000635 electron micrograph Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000005441 aurora Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 239000010802 sludge Substances 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Laser Beam Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Dicing (AREA)
Abstract
一种针对由机械半导体工件(10)的机械锯切造成的失效机理的解决方案,需要使用激光束以从切割道(18)切削并移除导电(32)材料层和低k电介质(34)材料层,随后进行锯切割以分开半导体器件(12)。激光束在所述导电和低k电介质材料层中形成诸如沟槽(44)的激光刻划区(44、52),所述沟槽的底部(50)止于位于所述导电和低k电介质材料层(38)中各者下方的氧化硅激光能量穿透停止层(30)。所揭示的工艺需要选择诸如波长、脉冲宽度以及注量等激光参数,这些激光参数协作以保持所述氧化硅停止层完好无损或几乎未损坏。机械锯切削所述氧化硅层和位于所述氧化硅层下方的所有其他材料层(40)以及衬底(16),从而分开所述半导体器件。
Description
版权声明
2010电子科技股份有限公司(2010 Electro Scientific Industries,Inc.)本专利文献的揭示内容的一部分含有受版权保护的材料。当本专利文献或本专利揭示内容以专利商标局专利文件或记录的形式出现时,版权所有人不反对任何人对其进行传真复制,但除此之外保留所有版权权利。37 CFR§1.71(d)。
技术领域
本发明涉及图案化半导体工件的激光刻划,具体而言,涉及激光能量穿透停止层的使用,以在最小化激光刻划碎片产生的情况下实现多层图案化工件中的沟槽刻划。
背景技术
半导体器件是在诸如硅晶片等衬底上生成的多层结构,随后半导体器件在封装之前通过机械锯或激光束而切割成单独的芯片。半导体器件的趋势是用低k电介质材料层取代二氧化硅电介质层。低k电介质材料机械强度不高;因此,对低k电介质材料层进行机械锯切可导致一组独特的器件失效机理。激光刻划半导体器件的问题在于,激光束与多层结构相互作用而产生必须移除或处理的大量碎片。激光所产生的碎片极热并且含有熔料。当这些碎片落在晶片表面上时,熔料或熔渣将熔合到该表面上。起于刻划的激光所产生碎片的处理方式为:在刻划之后清理晶片,或在刻划之前将水基涂层涂布于晶片表面以防止热渣粘到晶片表面,并且随后在刻划之后一起清理所述涂层以及所产生的碎片。然而,涂布和清理增加了刻划工艺的成本和复杂性。因此,需要提供一种方法,以在最小化碎片产生的情况下快速完全地刻划半导体器件。
发明内容
一种针对由机械锯切造成的失效机理的解决方案,需要使用激光束在进行锯切割之前从切割道切削并移除导电和低k电介质材料层。所揭示的工艺使用激光束以在包含导电(例如,铜)材料层和低k电介质材料层的半导体工件中形成诸如沟槽或凹槽(下文中“沟槽”)等激光刻划区,所述沟槽的底部止于位于导电材料层和低k电介质材料层中各者下方的氧化硅(SiOx)(优选为二氧化硅)激光能量穿透停止层。所述氧化硅层可通过许多常用工艺来制备,诸如,物理和化学沉积、旋涂式玻璃法(spin on glass)(例如,四乙基原硅酸盐(TEOS))或硅的氧化(例如,热氧化)。半导体工件还可含有电路。所揭示的工艺需要选择诸如波长、脉冲宽度以及注量等激光参数,这些激光参数协作以保持氧化硅层停止层完好无损或几乎未损坏。此结果为,沟槽底板与氧化硅停止层一致。
存在刻划半导体工件并随后对其进行切割以分开半导体器件的两个优选实施例。一个实施例需要对具有侧边界的沟槽进行激光切削,所述侧边界界定了大于锯条宽度的沟槽宽度,从而向下移除器件层直至沟槽底板,并且随后使用机械锯以在所得沟槽中切割半导体器件。另一个实施例需要在切割道的两条侧边缘上切削出两条刻划线,沿深度方向切削至氧化硅停止层,并且随后用机械锯在刻划线之间切割半导体器件。
通过下文中参考附图进行的优选实施例的详细描述,容易发现本发明的其他方面和优点。
附图说明
图1为包含由切割道分开的多个相互隔开的半导体器件在内的图案化半导体工件的局部平面图。
图2为示出图1中包含多层结构的半导体器件的横截面图的放大图像,所述多层结构由被导电材料层和低k电介质材料层覆盖的二氧化硅下层组成。
图3A和图3B为图1的经修改副本,所示为经配置以分开图1中的半导体器件的两个优选激光刻划区。
图4A为在对硅晶片执行激光刻划之后碎片区域的电子显微图倾斜图像,图4B为大体示出经刻划以产生图4A中所示的碎片区域的硅晶片多层结构的简化框图。
图5为根据现有技术的由于在硅衬底中激光刻划出刻划线而产生的碎片区域的电子显微图。
具体实施方式
图1为图案化半导体工件10的局部平面图,图案化半导体工件10作为包含多个相互隔开的半导体器件12(图示了四个器件12的部分)的硅晶片来实施,半导体器件12包含制造于硅衬底16(图2)上的多层结构14(图2)并且由切割道18分开。替代衬底16包含玻璃、应变硅、绝缘体上硅、锗、砷化镓以及磷化铟。图1还图示了多个对准标线20以及占用切割道18内面积的其他牺牲性测试结构(sacrificial test structure)22。
图2为包含多层结构或堆14的半导体器件12的横截面图,多层结构或堆14由低k电介质材料层34所包围的铜线32层所覆盖的二氧化硅下层30组成。二氧化硅层30包围钨互连线36。铜线32和钨互连线36延伸至切割道18中。铜线32层和低k电介质材料层34特征为弱热机械强度性质,因此与二氧化硅层30相比,它们构成多层堆14的弱机械性层38,所述二氧化硅层30具有强机械性在于它几乎在每种热机械性质方面都比低k材料层好大约10倍。这些热机械性质包含层间粘附力、对铜的粘附力、热稳定性、抗张强度、模量、硬度、内聚强度以及蚀刻选择性。多层堆14经制造以使弱机械性层38沿深度方向定位成距硅衬底16较远,并且使包含二氧化硅层30以及在二氧化硅层30下方形成的任何层在内的强热机械性层40沿深度方向定位成距硅衬底16较近。
在最小化碎片产生的情况下对半导体工件10进行激光刻划需要发射暂时隔开的激光脉冲的脉冲激光束,并且使所述激光脉冲与切割道18中的一者对准,以便入射在半导体工件10的弱机械性上层38上。激光脉冲的特征在于波长、脉冲宽度及注量,以使得多层堆14的弱机械性上层38吸收传播通过半导体工件10的激光束的能量,而强机械性下层40透射所述激光束的能量。二氧化硅层30用作弱机械性上层38的层能量穿透停止层。
二氧化硅层30用作激光能量停止层的原因在于,二氧化硅层30与硅衬底16热接触。硅衬底16充当二氧化硅停止层30的散热器,因此二氧化硅停止层30在激光刻划期间完好无损。相比之下,弱上层38堆中所包含的一个或多个二氧化硅钝化层不同于二氧化硅层30,因为前一种二氧化硅层被其他电介质材料(不良热导体)包围。这样可使热量在形成弱上层38各部分的二氧化硅层中积聚,使得弱上层38可通过激光能量移除。
赋予半导体工件10与对准切割道18的脉冲激光束之间的相对运动的激光束定位系统(未图示)在最小化碎片产生的情况下实现对弱机械性上层38在深度方向上的移除,并因此形成具有沿切割道18纵向延伸的侧边界的激光刻划区。根据参考图3A和图3B而描述的两个优选实施例中的任一者,所形成的激光刻划区的侧边界由激光能量穿透停止层30的暴露部分来界定,其中图3A和图3B所示为图1的副本,而为清晰起见将对准标线及牺牲性测试结构移除。
图3A所示为根据第一优选实施例的沟槽44形式的激光刻划区,沟槽44的切削方式为,引导脉冲激光束沿切割道18通过一次或多次。沟槽44具有分开一段距离48的侧边界46,所述距离48界定沟槽宽度。激光束在侧边界46之间移除弱机械性上层38材料以形成沟槽44,而作为底板50的二氧化硅层30基本上未被激光束损坏。可通过使用定位平台(positioning stage)或其他器件以纵向地沿切割道18赋予机械锯与半导体工件10之间的相对运动,来执行半导体器件12的分离。机械锯具有厚度小于沟槽宽度的锯条,以使机械锯不切穿上层30的弱机械性材料而分开位于沟槽44任一侧的半导体器件12。
图3B所示为根据第二优选实施例的每一条侧边界由刻划线54形成的激光刻划区52,刻划线54的切削方式为,引导脉冲激光束沿切割道18的侧边缘56通过一次或多次。刻划线54确定一段距离58以界定激光刻划区切削宽度。激光束移除弱机械性上层38材料以形成每一刻划线54,而作为底板60的二氧化硅层30基本上未被激光束损坏。弱机械性上层38材料存在于刻划线54之间的空间中。
可通过使用定位平台或其他器件以纵向地沿切割道18赋予机械锯与半导体工件10之间的相对运动,来执行半导体器件的分离。机械锯具有厚度在激光刻划区切削宽度58以内但未延伸超出切割道18的任一侧边缘56的锯条,使得当半导体器件12被分开时机械锯不切穿半导体器件12的上层38的弱机械性材料。机械锯切削区超出锯条厚度以允许x-y锯条位置变化以及锯条偏转。锯条可切削至刻划线54内,但不可切削至侧边缘56以外。由于位于刻划线54任一侧的弱上层38材料之间不存在实体附接,因此机械锯可在激光刻划区58内部的任何地方进行切削,而不会损坏侧边缘56以外的弱上层38。
技术人员将了解,用机械锯进行切削可产生冷颗粒形式的大量碎片,所述冷颗粒不会熔合至晶片表面。此碎片可在后续锯切清理操作过程中容易地洗净。此外,可在使用水流(有时混合有液体润滑剂)的情况下执行机械锯切,该水流能降低热渣形成的可能性。
图4A为根据与图3A相关的第一优选实施例的在执行硅晶片72(图4B)的激光刻划之后碎片区域70的电子显微图倾斜图像。图4B为大体上示出硅晶片72的多层结构的简化框图。硅晶片72包含由黑钻石1(Black Diamond 1)低k电介质层34包围的0.5μm厚的铜线32层。铜线32和电介质层34在50nm厚的碳化硅层76上形成,碳化硅层76在0.5μm厚的TEOS二氧化硅层30上形成。重复率为20KHz、功率为200mW,脉冲宽度约为20ns并且扫描速度为20mm/sec的具有30μm光斑直径的圆顶帽形355μm激光束的两次通过仅移除弱机械性层38,即铜线32和低k电介质层34及76。包含二氧化硅层30的强机械性下层40保持未切削状态,以便用机械锯来完成单片化工艺。图4A示出上述工艺大大消除了激光刻划工艺所产生的碎片和渣。图4A还示出沟槽44的底板50极其平坦。由于二氧化硅层30在制造半导体器件12期间沉积,因此沟槽底板50的平坦度与二氧化硅层30的平坦度相关。由于所揭示工艺可移除材料的弱上层38直至底部二氧化硅层30,因此在激光刻划工艺开始时,沟槽底板50与二氧化硅层30一样平坦。
图5为根据现有技术的由于在硅衬底84中激光刻划出刻划线82而产生的碎片区域80的电子显微图。由于对衬底84进行激光刻划而产生的碎片在刻划线82的任一侧延伸出数百微米。
通常,可选择激光波长、脉冲宽度及注量,以使得氧化硅停止层在根据所揭示技术的激光刻划之后完好无损或几乎未损坏。此结果为,沟槽底板与氧化硅停止层一致。这是有可能的,因为通过适当地选择激光参数,激光能穿透氧化硅材料,但不能穿透金属和低k结构。
刻划至氧化硅停止层所需的准确激光参数是由器件决定的。所需激光参数取决于半导体器件的多层结构中不同层的成分、定向以及厚度。对于任何给定的半导体工件10,存在界定工艺窗口的激光参数范围以用于刻划直至氧化硅停止层。通常,波长、光斑大小、光斑形状以及重复率的参数是固定的,而激光功率、刻划速度以及刻划通过的次数是可变的,直到体现出刻划至氧化物(scribe-to-oxide)工艺窗口为止。如果所得到的工艺窗口太小,那么光斑大小、光斑形状、重复率或激光波长可根据需要进行调整以改进工艺。下文中的表1总结了参数范围。
表1
波长(±10nm):532nm、355nm以及266nm
光斑大小(1/e2):3μm到100μm。
光斑形状(空间):高斯型、顶帽圆形、正方形
重复率:10KHz到2MHz
刻划速度:50mm/s到5000mm/s。
达到下氧化物停止层的刻划通过的次数:1到25
激光功率范围:0.1W到20W
各半导体材料层中待切削、移除或处理的厚度在0.5nm与10,000nm之间。层数在1与50之间(排除二氧化硅停止层30)。待用激光束切削、移除或处理的半导体材料层含有以下材料中的一种或多种:
a)电介质材料SiO2(二氧化硅)、Si3N4(氮化硅)、碳化硅、氧氮化硅、氮化钽或氧化钽;
b)用硅、氧、氮、碳、氢以及氟中的两种或两种以上元素的任何化合物制成的电介质材料。这些电介质材料包含低k材料。根据所选择的元素,除“不饱和键”之外,电介质材料的各化学键为C-C、C=C、C C、C-F、C-H、O-H、C-O、C=O、C-N、C=N、C≡N;
c)上文在项目a)和b)中列出的具有多孔结构以降低材料介电常数的电介质材料(例如,干凝胶或气凝胶);
d)铜(Cu)、铝(Al)、钨(W)、铬(Cr)、钛(Ti)、镍(Ni)、钴(Co)、钽(Ta)、金(Au)以及铂(Pt)的金属层(包含这些材料上的表面氧化物);以及
e)多晶硅和硅。
以下是用激光切削的所有低k材料的列表:
a)由以下三家公司制造或特许的市售低K电介质材料中的任一种:
(i)应用材料黑钻石(Applied Materials Black Diamond)1TM、黑钻石(BlackDiamond)2TM以及BLOkTM。
(ii)Novellus CoralTM
(iii)ASM国际极光(ASM International Aurora)TM
b)“掺碳氧化硅”类或“掺氟氧化硅”类低k电介质材料。这些材料具有由以下元素中的两种或两种以上元素的任何化合物组成的化学计量:硅、氧、氮、碳、氢以及氟。除“不饱和键”之外,元素之间可根据元素通过单键、双键或三键来键合,即,C-C、C=C、C C、C-F、C-H、O-H、C-O、C=O、C-N、C=N、C≡N;
c)旋涂式聚合(Spin-on polymeric)低k电介质,诸如,陶氏化学(DowChemical)的SiLKTM、聚酰亚胺、聚降冰片烯、苯并环丁烯、PTFE(TeflonTM)以及类似于TeflonTM的材料诸如PFA、硅酮基聚合电介质材料、氢倍半硅氧烷(hydrogen silsesquioxane,HSQ)以及甲基倍半硅氧烷(methylsilsesquioxane,MSQ);以及
d)在以上项目中列出的具有多孔结构以降低材料介电常数的电介质材料。
所属领域的技术人员将很清楚,可在不脱离本发明的基本原则的前提下,对上述实施例的具体细节进行许多改变。因此,本发明的范围应仅由权利要求书来确定。
Claims (8)
1.一种带有最小化碎片产生的刻划半导体器件的方法,所述方法包括:
提供含有多个相互隔开的半导体器件的图案化半导体工件,所述半导体器件包含在半导体衬底上制造的多层结构并且由切割道分开,所述多层结构包含沿深度方向分别定位成距所述半导体衬底较远和较近的弱机械性上层和强机械性下层的材料,所述弱机械性上层包含特征为弱热机械强度性质的导电材料和低k电介质材料,而所述强机械性下层包含特征为强热机械强度性质的电介质材料,并且所述强机械性下层包含用作所述弱机械性上层的激光能量穿透停止层的氧化硅材料层;
产生特征在于波长、脉冲宽度及注量的多个暂时隔开的激光脉冲的脉冲激光束,以使得所述弱机械性上层吸收所述激光束而所述强机械性下层透射所述激光束;
使所述脉冲激光束与所述切割道中的一者对准;以及
沿所述切割道纵向地赋予所述脉冲激光束与所述半导体工件之间的相对运动,从而在最小化碎片产生的情况下实现对所述弱机械性上层在深度方向上的移除并因此形成具有侧边界的激光刻划区,所述侧边界由所述激光能量穿透停止层的暴露部分来界定并且基本上不被所述脉冲激光束损坏。
2.根据权利要求1所述的方法,其进一步包括分开所述半导体器件,具体为,沿所述切割道纵向地赋予机械锯与所述半导体工件之间的相对运动并且赋予所述激光刻划区的所述侧边界之间的相对运动,从而切穿所述强机械性下层以分开位于所述激光刻划区任一侧的所述半导体器件。
3.根据权利要求2所述的方法,其中所述机械锯包含具有一定锯条宽度的锯条,所述激光刻划区的所述侧边界分开一段距离以界定大于所述锯条宽度的激光刻划区宽度,并且所述弱机械性上层材料没有任何部分存在于所述机械锯所切穿的所述激光刻划区之内。
4.根据权利要求2所述的方法,其中所述机械锯包含具有一定锯条宽度的锯条,所述激光刻划区的每一所述侧边界都由刻划线形成,所述刻划线确定一段距离以界定大于所述锯条宽度的激光刻划区切削宽度,并且所述弱机械性上层材料的一部分存在于形成所述机械锯所切穿的所述激光刻划区的所述刻划线之间。
5.根据权利要求4所述的方法,其中所述切割道由侧边缘来界定,并且其中所述刻划线在所述切割道的所述侧边缘上形成。
6.根据权利要求1所述的方法,其中所述低k电介质材料包含氧化物衍生物、有机物以及高度多孔氧化物中的一者或多者。
7.根据权利要求1所述的方法,其中所述导电材料包含铜、铝、钨、铬、钛、镍、钴、钽、金或铂。
8.根据权利要求1所述的方法,其中所述半导体衬底用硅制成。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/751,736 | 2010-03-31 | ||
US12/751,736 US7977213B1 (en) | 2010-03-31 | 2010-03-31 | Use of laser energy transparent stop layer to achieve minimal debris generation in laser scribing a multilayer patterned workpiece |
PCT/US2011/027758 WO2011126649A2 (en) | 2010-03-31 | 2011-03-09 | Use of laser energy transparent stop layer to achieve minimal debris generation in laser scribing a multilayer patterned workpiece |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102918634A true CN102918634A (zh) | 2013-02-06 |
CN102918634B CN102918634B (zh) | 2015-05-20 |
Family
ID=44245500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180026697.4A Expired - Fee Related CN102918634B (zh) | 2010-03-31 | 2011-03-09 | 激光能量穿透停止层的使用以在激光刻划多层图案化工件中达到最小化碎片产生 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7977213B1 (zh) |
JP (1) | JP5922642B2 (zh) |
KR (1) | KR20130009798A (zh) |
CN (1) | CN102918634B (zh) |
WO (1) | WO2011126649A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114178700A (zh) * | 2021-11-30 | 2022-03-15 | 武汉新芯集成电路制造有限公司 | 一种晶圆及其切割方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6037659B2 (ja) * | 2012-05-25 | 2016-12-07 | 株式会社ディスコ | ウェーハの分割方法 |
US20160172243A1 (en) * | 2014-12-11 | 2016-06-16 | Nxp B.V. | Wafer material removal |
DE102015204698B4 (de) * | 2015-03-16 | 2023-07-20 | Disco Corporation | Verfahren zum Teilen eines Wafers |
KR101685428B1 (ko) * | 2015-07-20 | 2016-12-12 | 주식회사 이오테크닉스 | 레이저 마킹방법 |
JP7066263B2 (ja) * | 2018-01-23 | 2022-05-13 | 株式会社ディスコ | 加工方法、エッチング装置、及びレーザ加工装置 |
JP7083572B2 (ja) * | 2018-04-09 | 2022-06-13 | 株式会社ディスコ | ウェーハの加工方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020031899A1 (en) * | 1999-06-08 | 2002-03-14 | Ran Manor | Apparatus and method for singulating semiconductor wafers |
CN1612304A (zh) * | 2003-10-22 | 2005-05-04 | 株式会社迪斯科 | 晶片分割方法 |
US20070272666A1 (en) * | 2006-05-25 | 2007-11-29 | O'brien James N | Infrared laser wafer scribing using short pulses |
US20080064186A1 (en) * | 2006-09-13 | 2008-03-13 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor element |
US20080132035A1 (en) * | 2006-11-30 | 2008-06-05 | Disco Corporation | Method of processing wafer |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6303977B1 (en) * | 1998-12-03 | 2001-10-16 | Texas Instruments Incorporated | Fully hermetic semiconductor chip, including sealed edge sides |
US6555447B2 (en) * | 1999-06-08 | 2003-04-29 | Kulicke & Soffa Investments, Inc. | Method for laser scribing of wafers |
JP2003320466A (ja) * | 2002-05-07 | 2003-11-11 | Disco Abrasive Syst Ltd | レーザビームを使用した加工機 |
JP2004296905A (ja) * | 2003-03-27 | 2004-10-21 | Toshiba Corp | 半導体装置 |
JP2005064230A (ja) * | 2003-08-12 | 2005-03-10 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
US7611966B2 (en) * | 2005-05-05 | 2009-11-03 | Intel Corporation | Dual pulsed beam laser micromachining method |
US20080213978A1 (en) * | 2007-03-03 | 2008-09-04 | Dynatex | Debris management for wafer singulation |
GB2444037A (en) * | 2006-11-27 | 2008-05-28 | Xsil Technology Ltd | Laser Machining |
US8526473B2 (en) * | 2008-03-31 | 2013-09-03 | Electro Scientific Industries | Methods and systems for dynamically generating tailored laser pulses |
US7923350B2 (en) * | 2008-09-09 | 2011-04-12 | Infineon Technologies Ag | Method of manufacturing a semiconductor device including etching to etch stop regions |
US8293581B2 (en) * | 2009-02-18 | 2012-10-23 | Globalfoundries Inc. | Semiconductor chip with protective scribe structure |
-
2010
- 2010-03-31 US US12/751,736 patent/US7977213B1/en not_active Expired - Fee Related
-
2011
- 2011-03-09 CN CN201180026697.4A patent/CN102918634B/zh not_active Expired - Fee Related
- 2011-03-09 WO PCT/US2011/027758 patent/WO2011126649A2/en active Application Filing
- 2011-03-09 KR KR1020127025530A patent/KR20130009798A/ko not_active Application Discontinuation
- 2011-03-09 JP JP2013502603A patent/JP5922642B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020031899A1 (en) * | 1999-06-08 | 2002-03-14 | Ran Manor | Apparatus and method for singulating semiconductor wafers |
CN1612304A (zh) * | 2003-10-22 | 2005-05-04 | 株式会社迪斯科 | 晶片分割方法 |
US20070272666A1 (en) * | 2006-05-25 | 2007-11-29 | O'brien James N | Infrared laser wafer scribing using short pulses |
US20080064186A1 (en) * | 2006-09-13 | 2008-03-13 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor element |
US20080132035A1 (en) * | 2006-11-30 | 2008-06-05 | Disco Corporation | Method of processing wafer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114178700A (zh) * | 2021-11-30 | 2022-03-15 | 武汉新芯集成电路制造有限公司 | 一种晶圆及其切割方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011126649A2 (en) | 2011-10-13 |
JP5922642B2 (ja) | 2016-05-24 |
CN102918634B (zh) | 2015-05-20 |
US7977213B1 (en) | 2011-07-12 |
JP2013524509A (ja) | 2013-06-17 |
KR20130009798A (ko) | 2013-01-23 |
WO2011126649A3 (en) | 2011-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102918634B (zh) | 激光能量穿透停止层的使用以在激光刻划多层图案化工件中达到最小化碎片产生 | |
US11103960B2 (en) | Method of separating surface layer of semiconductor crystal using a laser beam perpendicular to the separating plane | |
JP6734202B2 (ja) | 脆性材料をスクライブして化学エッチングする方法およびシステム | |
KR102442524B1 (ko) | 반도체 웨이퍼에 부착된 관통-홀을 가진 무기 웨이퍼 | |
US9221124B2 (en) | Ultrashort laser pulse wafer scribing | |
JP5496657B2 (ja) | 低誘電材料を含むワークピースのレーザ加工 | |
CN101681876B (zh) | 使用短脉冲红外激光刻划晶片 | |
JP4781661B2 (ja) | レーザ加工方法 | |
US6720522B2 (en) | Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining | |
JP3660294B2 (ja) | 半導体装置の製造方法 | |
EP2460633B1 (en) | Method for cutting processing target | |
CN106938370A (zh) | 一种激光加工系统及方法 | |
KR20150032582A (ko) | 웨이퍼 다이싱을 위한, 레이저, 플라즈마 에칭 및 배면 그라인딩 프로세스 | |
KR20150005966A (ko) | 플라즈마 에칭을 갖는 하이브리드 멀티-스텝 레이저 스크라이빙 프로세스를 이용한 웨이퍼 다이싱 | |
WO2004082006A1 (ja) | レーザ加工方法 | |
US20150303113A1 (en) | Wafer processing method | |
US7883992B2 (en) | Wafer dividing method | |
JP2004221286A (ja) | 半導体装置及びその製造方法 | |
TW201250832A (en) | Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch | |
JP2005142398A (ja) | 半導体ウエーハの分割方法 | |
JP2008071870A (ja) | 半導体素子の製造方法 | |
TWI607526B (zh) | 切割包含複數個積體電路之基板的方法 | |
US20180108565A1 (en) | Method of laser-processing device wafer | |
JP4684544B2 (ja) | シリコンから形成された半導体ウエーハの分割方法及び装置 | |
CN107378259B (zh) | 一种Low-k材料的激光加工装置及方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150520 Termination date: 20170309 |
|
CF01 | Termination of patent right due to non-payment of annual fee |