CN102915703B - Pixel driving circuit and driving method thereof - Google Patents
Pixel driving circuit and driving method thereof Download PDFInfo
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- CN102915703B CN102915703B CN201210425355.6A CN201210425355A CN102915703B CN 102915703 B CN102915703 B CN 102915703B CN 201210425355 A CN201210425355 A CN 201210425355A CN 102915703 B CN102915703 B CN 102915703B
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Abstract
The invention discloses a pixel driving circuit and a driving method thereof. The pixel driving circuit comprises a first transistor, a second transistor, a third transistor and a fourth transistor, storage capacitors, an organic light emitting diode (OLED), a bypass circuit, a data line, an N-1st scanning line and an Nth scanning line. A second end of the storage capacitor is connected with a source electrode of the first transistor, and the OLED is connected with the bypass circuit in parallel, so that current flowing through the OLED is completely determined by data voltage and is irrelevant to threshold voltage of the first transistor; the current flowing through the OLED completely relays on the data voltage of the data line, without increasing the number of the transistors, the capacitors and control lines too much, the threshold voltage can be accurately compensated in order to maintain uniformity and constancy of the display brightness, the aperture ratio and the display resolution can be improved easily, and the capability of inhibiting nonuniform distribution of the threshold voltage is improved; therefore, the pixel driving circuit and the driving method thereof have a relatively high practical value and can be expected to be widely used in a microelectronic industry and a flat panel display industry.
Description
Technical field
The invention belongs to flat pannel display field, be specifically related to a kind of pixel-driving circuit and driving method thereof.
Background technology
It is little that active matrix organic light-emitting diode (Active Matrix Organic Light-Emitting Diode) AMOLED has volume, simple in structure, from main light emission, the advantage such as brightness is high, image quality good, visible angle is large, low in energy consumption and response time is short, thereby cause extensive concern, become most probably the display technique of future generation that replaces liquid crystal.
Current, mainly contain amorphous silicon film transistor and polycrystalline SiTFT for the thin film transistor (TFT) TFT that drives AMOLED.Due to the characteristic of organic light emitting diode OLED current drives, OLED needs large electric current to drive, because amorphous silicon film transistor cannot provide enough drive currents because carrier mobility is low, and the carrier mobility of polycrystalline SiTFT and metal oxide semiconductor transistor much larger than amorphous silicon film transistor due to carrier mobility, can meet the requirement of driving OLED, thereby polycrystalline SiTFT and metal oxide semiconductor transistor become the first-selection of driving OLED.In prior art, conventionally adopt the pixel-driving circuit of an electric capacity 2T1C of two transistors to be used for driving OLED.But using multi-crystal TFT as driving tube, due to the grain boundary stochastic distribution of polycrystalline silicon material, the threshold voltage of multi-crystal TFT is skewness between each pixel of viewing area, causes viewing area brightness irregularities; Most of metal-oxide semiconductor (MOS) is also polycrystalline structure, also has threshold voltage problem pockety between each pixel.Therefore, the pixel-driving circuit structure of a traditional electric capacity 2T1C of two transistors is not suitable for high-quality AMOLED demonstration.In order to realize the compensation of the threshold voltage to driving tube, need to better drive image element circuit by circuit compensation.
But in prior art, the design of most of AMOLED pixel-driving circuit can only compensate the threshold voltage of driving tube to a certain extent, can not accurately eliminate the inhomogeneous problem of demonstration of being brought by threshold value skewness.
In prior art, the second end ground connection of OLED, the electric current that flows through OLED is directly proportional to the difference of the cut-in voltage of OLED to supply voltage.In the present invention, because the second end of memory capacitance connects the source electrode of the first transistor, square being directly proportional of the electric current that flows through like this OLED and data voltage.Therefore, in the case of ensure to flow through the electric current of OLED identical, data voltage of the present invention can be much smaller.Because data voltage is larger, just poorer for suppressing threshold voltage ability pockety, therefore, the present invention can in the case of ensure to flow through the electric current of OLED identical, effectively reduce data voltage, greatly improved inhibition threshold voltage ability pockety.
Beneficial effect of the present invention:
Pixel-driving circuit of the present invention, the source electrode of the second termination the first transistor of employing memory capacitance, and OLED is in parallel with bypass circuit, and the electric current that flows through OLED is determined by data voltage completely, and irrelevant with the threshold voltage of the first transistor.The present invention is in exceeding the quantity that increases transistor, electric capacity and control line, the place one's entire reliance upon data voltage of data line of the electric current of OLED of making to flow through, can accurately realize threshold voltage compensation to keep the evenly constant of display brightness, be conducive to improve aperture opening ratio and display resolution, and can in the case of ensure to flow through the electric current of OLED identical, effectively reduce data voltage, greatly improved inhibition voltage ability pockety.Therefore, the present invention has higher practical value, is expected to be widely used in microelectronics and dull and stereotyped display industries.
Summary of the invention
In order to overcome defect and the deficiency of above-mentioned prior art, the invention provides pixel-driving circuit and the driving method thereof of a kind of AMOLED of threshold voltage of fine compensation driving tube.
One object of the present invention is to provide a kind of pixel-driving circuit.
Pixel-driving circuit of the present invention comprises: the first transistor to the four transistors, memory capacitance, organic light emitting diode OLED, bypass circuit, data line, N-1 sweep trace and N sweep trace; Wherein, N is natural number,
The drain electrode of the first transistor connects supply voltage, and grid connects the first end of memory capacitance, and source electrode connects the second end of memory capacitance and the anode of OLED;
The drain and gate of transistor seconds connects the grid of first end, the 3rd transistorized source electrode and the first transistor of memory capacitance, and source electrode connects the 4th transistorized drain electrode;
The 3rd transistorized grid connects N-1 sweep trace, and drain electrode connects supply voltage, and source electrode connects the grid of memory capacitance, the first transistor and the drain and gate of transistor seconds;
The 4th transistorized grid connects N sweep trace, and drain electrode connects the source electrode of transistor seconds, and source electrode connects data line;
Grid and the drain electrode of grid, the 3rd transistor source and the transistor seconds of the first termination the first transistor of memory capacitance, the second anode of termination OLED and the source electrode of the first transistor;
The anode of OLED connects the second end of memory capacitance and the source electrode of the first transistor, plus earth;
Bypass circuit is in parallel with OLED, and two control ends connect respectively N-1 sweep trace and N sweep trace.
The first transistor is as driving tube, for OLED provides drive current.
Transistor seconds, the 3rd transistor and bypass circuit are high level and sweep trace N sweep trace while being low level at N-1 sweep trace, and memory capacitance is carried out to precharge.
Transistor seconds, the 4th transistor and bypass circuit are low level and N sweep trace while being high level at N-1 sweep trace, and data voltage is written to the grid of the first transistor and is stored in memory capacitance.
Sweep trace when N sweep trace is the N time programming; Sweep trace when N-1 sweep trace is the N-1 time programming.
The first transistor to the four transistors adopt polycrystalline SiTFT or metal oxide semiconductor transistor.
In viewing area, each pixel is positioned at zones of different, therefore be positioned at the drift different (increase or reduce) of the transistorized threshold voltage of the pixel of zones of different, and the drift of transistorized threshold voltage in same pixel is consistent (increases simultaneously or reduce).Therefore, in same pixel, the first transistor and transistor seconds arrange middle close-packed arrays at domain, and measure-alike, make both threshold voltages in same pixel remain in the same size, i.e. V
tH1=V
tH2.
Bypass circuit is in parallel with OLED, and two control ends connect respectively N-1 sweep trace and N sweep trace.In the time of programming state, N-1 sweep trace is that high level and N sweep trace are low level, or N-1 sweep trace is that low level and N sweep trace are while being high level, bypass circuit conducting, electric current passes through from bypass circuit, and OLED is bypassed, thereby OLED is not luminous, avoid having large electric current to flow through the situation of OLED in the time that N-1 sweep trace is high level, be conducive to improve aperture opening ratio and display resolution.
The second termination of OLED is as the source electrode of the first transistor of driving tube, avoided the impact on OLED of drive current at working stage.
Another object of the present invention is to provide a kind of driving method of above-mentioned pixel-driving circuit.
A driving method for pixel-driving circuit, comprises the following steps:
1) in the default stage: N-1 sweep trace is that high level and N sweep trace are low level, in this stage, transistor seconds and the 3rd transistor are opened, bypass circuit conducting, and supply voltage is precharged to supply voltage to memory capacitance;
2) adjusting stage: N-1 sweep trace is that low level and N sweep trace are the high level stage, in this stage, transistor seconds and the 4th transistor are opened, bypass circuit conducting, memory capacitance is by transistor seconds and the electric discharge of the 4th transistor, stop electric discharge until transistor seconds enters cut-off state, now the voltage in memory capacitance is the threshold voltage that data voltage adds transistor seconds;
3) working stage: N-1 sweep trace and N sweep trace are low level, in this stage, transistor seconds, the 4th transistor and bypass circuit cut-off, the voltage at memory capacitance two ends remains unchanged, and wherein, N is natural number.
At working stage, due to transistor seconds, the 4th transistor and bypass circuit cut-off, there is not the path of releasing in memory capacitance, therefore the voltage at the two ends of memory capacitance remains unchanged, so time voltage in memory capacitance be the anode voltage sum of threshold voltage and the OLED of data voltage, transistor seconds.And the electric current that now flows through the first transistor is the electric current that flows through OLED, square being directly proportional of its size of current direct ratio and the gate source voltage of the first transistor and the difference of threshold voltage, and the threshold voltage of the first transistor equals the threshold voltage of transistor seconds, therefore flow through OLED electric current to square being directly proportional of data voltage.Therefore the electric current that flows through OLED determines by data voltage completely, and irrelevant with the threshold voltage of the first transistor.
Brief description of the drawings
Fig. 1 is the circuit diagram of the embodiment mono-of pixel-driving circuit of the present invention;
Fig. 2 is the circuit diagram of the embodiment bis-of pixel-driving circuit of the present invention;
Fig. 3 is the signal timing diagram of embodiments of the invention.
Embodiment
Below in conjunction with accompanying drawing, by embodiment, the present invention will be further described.
Embodiment mono-
Pixel-driving circuit of the present invention comprises: the first transistor T1 to the four transistor Ts 4, memory capacitance C
s, organic light emitting diode OLED, bypass circuit, data line, N-1 sweep trace V
n-1with N sweep trace V
n; Wherein,
The drain electrode of the first transistor T1 connects supply voltage, and grid meets memory capacitance C
sfirst end, source electrode meets memory capacitance C
sthe second end and the anode of OLED;
The drain and gate of transistor seconds T2 meets memory capacitance C
sfirst end, the source electrode of the 3rd transistor T 3 and the grid of the first transistor T1, source electrode connects the drain electrode of the 4th transistor T 4;
The grid of the 3rd transistor T 3 connects N-1 sweep trace, and drain electrode connects supply voltage, and source electrode meets memory capacitance C
s, the grid of the first transistor T1 and the drain and gate of transistor seconds T2;
The grid of the 4th transistor T 4 connects N sweep trace, and drain electrode connects the source electrode of transistor seconds T2, and source electrode connects data line;
Memory capacitance C
sgrid and the drain electrode of grid, the 3rd transistor T 3 source electrodes and transistor seconds T2 of the first termination the first transistor T1, the source electrode of the anode of the second termination OLED and the first transistor T1;
The anode of OLED connects the second end of memory capacitance and the source electrode of the first transistor T1, plus earth;
In the present embodiment, bypass circuit is asynchronous double grid thin film transistor (TFT) T5, in parallel with OLED, and drain electrode connects the anode of OLED, source ground, and top gate electrode meets N-1 sweep trace V
n-1, bottom gate thin film meets N sweep trace V
n.
Transistor seconds T2, the 3rd transistor T 3 and the 5th transistor T 5 are at sweep trace V
n-1for high level and sweep trace V
nduring for low level to memory capacitance C
scarry out preliminary filling.
Transistor seconds T2, the 4th transistor T 4 and the 5th transistor T 5 are at sweep trace V
n-1for low level and sweep trace V
nduring for high level, data voltage be written to the grid of the first transistor and be stored in memory capacitance C
s.
The first transistor and transistor seconds close-packed arrays in layout design, is designed to same size, makes the threshold voltage V of the first transistor and transistor seconds in same pixel
tH1and V
tH2in the same size, i.e. V
tH1=V
tH2.
In the present embodiment, the parameter of each element is respectively: VDD gets 12V; V
n-1when high level, get 10V, 50uS holds time; V
nwhen high level, get 10V, 50uS holds time; C
selectric capacity is got 0.5pS; The breadth length ratio of T1 is set to 18um/6um; The breadth length ratio of T2 is set to 18um/6um; The breadth length ratio of T3 is set to 6um/6um; The breadth length ratio of T4 is set to 6um/6um; The breadth length ratio of T5 is set to 6um/6um.
As shown in Figure 3, the driving method of above-mentioned pixel-driving circuit, comprises the following steps the sequential of each signal wire:
1) the default stage (stage 1): N-1 sweep trace V
n-1for high level and N sweep trace V
nfor low level, in this stage, transistor seconds T2, the 3rd transistor T 3 and the 5th transistor T 5 are opened, supply voltage V
dDto memory capacitance C
sbe precharged to supply voltage V
dD;
2) adjusting stage (stage 2): N-1 sweep trace V
n-1for low level and N sweep trace V
nfor the high level stage, in this stage, transistor seconds T2, the 4th transistor T 4 and the 5th transistor T 5 are opened, memory capacitance C
sdischarge by transistor seconds T2 and the 4th transistor T 4, stop electric discharge, now memory capacitance C until transistor seconds T2 enters cut-off state
son voltage be data voltage V
dATAadd the threshold voltage V of transistor seconds
tH2, i.e. V
dATA+ V
tH2;
3) working stage (stage 3): N-1 sweep trace V
n-1with N sweep trace V
nfor low level, in this stage, transistor seconds T2, the 4th transistor T 4 and the 5th transistor T 5 end, memory capacitance C
sthe voltage at two ends remains unchanged, and wherein, N is natural number.
At working stage, because transistor seconds T2, the 4th transistor T 4 and the 5th transistor T 5 end, memory capacitance C
sthere is not the path of releasing, therefore memory capacitance C
sthe voltage at two ends remain unchanged, so time voltage in memory capacitance be the anode voltage sum of threshold voltage and the OLED of data voltage, transistor seconds, i.e. V
dATA+ V
tH2+ V
oLED, wherein V
oLEDfor the cut-in voltage of OLED.And the electric current that now flows through the first transistor T1 is the electric current that flows through OLED, the gate source voltage V of size of current direct ratio and the first transistor T1
gS1with threshold voltage V
tH1square being directly proportional of difference, i.e. (V
gS1-V
tH1)
2, namely (V
dATA+ V
tH2+ V
oLED-V
oLED-V
tH1)
2, and the threshold voltage V of the first transistor and transistor seconds
tH1and V
tH2equate i.e. V
tH1=V
tH2, namely, flow through OLED electric current to square being directly proportional of data voltage, i.e. V
dATA 2.Therefore flow through the electric current of OLED completely by data voltage V
dATAdetermine, and with the threshold voltage V of the first transistor
tH1irrelevant.
Embodiment bis-
In the present embodiment, bypass circuit is the 6th transistor and the 7th transistor T 6 and T7 in parallel, and in parallel with OLED, the drain electrode of T6 and T7 connects respectively the anode of OLED, the source ground of T6 and T7, and the grid of T6 meets N-1 sweep trace V
n-1, the grid of T7 meets N sweep trace V
n, other circuit connects identical with embodiment mono-, as shown in Figure 2.
The drive scheme of above-mentioned pixel-driving circuit, comprises the following steps:
1) the default stage: N-1 sweep trace V
n-1for high level and N sweep trace V
nfor low level, in this stage, transistor seconds T2, the 3rd transistor T 3 and the 6th and the 7th transistor T 6 and T7 open, supply voltage V
dDto memory capacitance C
sbe precharged to supply voltage V
dD;
2) adjusting stage: N-1 sweep trace V
n-1for low level and N sweep trace V
nfor the high level stage, in this stage, transistor seconds T2, the 4th transistor T 4 and the 6th and the 7th transistor T 6 and T7 open, memory capacitance C
sdischarge by transistor seconds T2 and the 4th transistor T 4, stop electric discharge, now memory capacitance C until transistor seconds T2 enters cut-off state
son voltage be data voltage V
dATAadd the threshold voltage V of transistor seconds
tH2, i.e. V
dATA+ V
tH2;
3) working stage: N-1 sweep trace V
n-1with N sweep trace V
nfor low level, in this stage, transistor seconds T2, the 4th transistor T 4 and the 6th and the 7th transistor T 6 and T7 cut-off, memory capacitance C
sthe voltage at two ends remains unchanged.
With embodiment mono-in like manner, memory capacitance C
sthe voltage at two ends remains unchanged, and the electric current that flows through the first transistor T1 is the electric current that flows through OLED, is proportional to V
dATA 2.Therefore flow through the electric current of OLED completely by V
dATAdetermine, and with the threshold voltage V of the first transistor
tH1irrelevant.
Finally it should be noted that, the object of publicizing and implementing mode is to help further to understand the present invention, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the disclosed content of embodiment, and the scope that the scope of protection of present invention defines with claims is as the criterion.
Claims (4)
1. a pixel-driving circuit, is characterized in that, described pixel-driving circuit comprises: the first transistor T1 to the four transistor Ts 4, memory capacitance C
s, organic light emitting diode OLED, bypass circuit, data line, N-1 sweep trace V
n-1with N sweep trace V
n; Wherein, N is natural number,
The drain electrode of described the first transistor T1 connects supply voltage, and grid connects the first end of memory capacitance, and source electrode connects the second end of memory capacitance and the anode of OLED;
The drain and gate of described transistor seconds T2 connects first end, the source electrode of the 3rd transistor T 3 and the grid of the first transistor T1 of memory capacitance, and source electrode connects the drain electrode of the 4th transistor T 4;
The grid of described the 3rd transistor T 3 connects N-1 sweep trace, and drain electrode connects supply voltage, and source electrode connects the grid of memory capacitance, the first transistor T1 and the drain and gate of transistor seconds T2;
The grid of described the 4th transistor T 4 connects N sweep trace, and drain electrode connects the source electrode of transistor seconds T2, and source electrode connects data line;
Described memory capacitance C
sgrid and the drain electrode of grid, the 3rd transistor T 3 source electrodes and transistor seconds T2 of the first termination the first transistor T1, the source electrode of the anode of the second termination OLED and the first transistor T1;
The anode of described OLED connects the second end of memory capacitance and the source electrode of the first transistor T1, plus earth;
Described bypass circuit is in parallel with OLED, and two control ends connect respectively N-1 sweep trace and N sweep trace;
Described bypass circuit is asynchronous double grid thin film transistor (TFT) T5, in parallel with OLED, and drain electrode connects the anode of OLED, source ground, and top gate electrode meets N-1 sweep trace V
n-1, bottom gate thin film meets N sweep trace V
n; Or described bypass circuit is the 6th transistor T 6 and the 7th transistor T 7 in parallel, in parallel with OLED, the drain electrode of described the 6th transistor T 6 and the 7th transistor T 7 connects respectively the anode of OLED, source ground, and the grid of the 6th transistor T 6 meets N-1 sweep trace V
n-1, the grid of the 7th transistor T 7 meets N sweep trace V
n.
2. pixel-driving circuit as claimed in claim 1, is characterized in that, described the first transistor to the four transistor Ts 1 to T4 adopt polycrystalline SiTFT or metal oxide semiconductor transistor.
3. pixel-driving circuit as claimed in claim 1, is characterized in that, described the first transistor and transistor seconds close-packed arrays in layout design, is designed to same size, makes the threshold voltage V of the first transistor and transistor seconds in same pixel
tH1and V
tH2in the same size, i.e. V
tH1=V
tH2.
4. a driving method for pixel-driving circuit described in claim 1, is characterized in that, described driving method comprises the following steps:
1) in the default stage: N-1 sweep trace is that high level and N sweep trace are low level, in this stage, transistor seconds and the 3rd transistor are opened, bypass circuit conducting, and supply voltage is precharged to supply voltage to memory capacitance;
2) adjusting stage: N-1 sweep trace is that low level and N sweep trace are the high level stage, in this stage, transistor seconds and the 4th transistor are opened, bypass circuit conducting, memory capacitance is by transistor seconds and the electric discharge of the 4th transistor, stop electric discharge until transistor seconds enters cut-off state, now the voltage in memory capacitance is the threshold voltage that data voltage adds transistor seconds;
3) working stage: N-1 sweep trace and N sweep trace are low level, in this stage, transistor seconds, the 4th transistor and bypass circuit cut-off, the voltage at memory capacitance two ends remains unchanged, and wherein, N is natural number.
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|---|---|---|---|
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| CN201210425355.6A CN102915703B (en) | 2012-10-30 | 2012-10-30 | Pixel driving circuit and driving method thereof |
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|---|---|---|---|---|
| US10157573B2 (en) | 2016-04-26 | 2018-12-18 | Facebook Technologies, Llc | Display with redundant light emitting devices |
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| CN103606351B (en) * | 2013-11-29 | 2016-04-20 | 中国科学院上海高等研究院 | Active matrix organic light-emitting diode pixel-driving circuit and driving method thereof |
| CN103594059B (en) * | 2013-11-29 | 2017-01-11 | 中国科学院上海高等研究院 | AMOLED (Active Matrix/Organic Light-Emitting Diode) pixel driving circuit and method |
| CN104050914B (en) * | 2014-05-19 | 2016-05-18 | 京东方科技集团股份有限公司 | Pixel-driving circuit, display unit and image element driving method |
| CN104009187A (en) * | 2014-05-29 | 2014-08-27 | 四川虹视显示技术有限公司 | Multicolor organic light emitting diode lighting (OLED) device |
| CN104637446B (en) * | 2015-02-03 | 2017-10-24 | 北京大学深圳研究生院 | Image element circuit and its driving method and a kind of display device |
| CN104575395B (en) * | 2015-02-03 | 2017-10-13 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuits |
| CN104821150B (en) * | 2015-04-24 | 2018-01-16 | 北京大学深圳研究生院 | Image element circuit and its driving method and display device |
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| CN105632419B (en) * | 2016-03-15 | 2018-05-11 | 深圳市华星光电技术有限公司 | The compensation circuit of liquid crystal display device and its Organic Light Emitting Diode |
| KR102570832B1 (en) | 2016-05-23 | 2023-08-24 | 엘지디스플레이 주식회사 | Organic light emitting diode display device and driving method the same |
| CN108053792B (en) * | 2018-01-19 | 2019-09-20 | 昆山国显光电有限公司 | A kind of pixel circuit and its driving method, display device |
| TWI734287B (en) * | 2019-12-05 | 2021-07-21 | 友達光電股份有限公司 | Display device and display panel |
| CN111028769B (en) * | 2019-12-31 | 2020-12-25 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit, driving method, display panel and display device |
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| CN114664254B (en) * | 2022-03-31 | 2023-08-01 | 武汉天马微电子有限公司 | Display panel, driving method thereof and display device |
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| KR101054327B1 (en) * | 2004-04-30 | 2011-08-04 | 엘지디스플레이 주식회사 | Current driven active matrix organic electroluminescent display device with pixel structure for improving image quality |
| KR100578813B1 (en) * | 2004-06-29 | 2006-05-11 | 삼성에스디아이 주식회사 | Light emitting display and method thereof |
| CN102290027B (en) * | 2010-06-21 | 2013-10-30 | 北京大学深圳研究生院 | Pixel circuit and display device |
| CN101986378A (en) * | 2010-11-09 | 2011-03-16 | 华南理工大学 | Pixel driving circuit for active organic light-emitting diode (OLED) display and driving method thereof |
| CN102654976B (en) * | 2012-01-12 | 2014-12-24 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof, and displau device |
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Cited By (1)
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| US10157573B2 (en) | 2016-04-26 | 2018-12-18 | Facebook Technologies, Llc | Display with redundant light emitting devices |
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