CN104715714A - Pixel circuit, drive method thereof and active matrix organic light-emitting diode - Google Patents

Pixel circuit, drive method thereof and active matrix organic light-emitting diode Download PDF

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Publication number
CN104715714A
CN104715714A CN201310693291.2A CN201310693291A CN104715714A CN 104715714 A CN104715714 A CN 104715714A CN 201310693291 A CN201310693291 A CN 201310693291A CN 104715714 A CN104715714 A CN 104715714A
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transistor
capacitor
electrically connected
scanning line
horizontal scanning
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CN104715714B (en
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张金方
朱修剑
韩真真
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Kunshan Govisionox Optoelectronics Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
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Kunshan Guoxian Photoelectric Co Ltd
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Abstract

The invention provides a pixel circuit, a drive method thereof and an active matrix organic light-emitting diode. According to the pixel circuit, a capacitor C3 is connected between a grid electrode of a transistor T2 and a grid electrode of a transistor T6 in series, that is, the threshold value voltage information of the transistor T6 is stored to the capacitor C3, and when the threshold value voltage of the transistor T6 fluctuates, compensation can be conducted through charging or discharging of the capacitor C3. In the initial phase, line scanning lines Sn-1 are second-order low-level signals or multi-order low-level signals and can make voltage change relatively gently; due to the fact that the line scanning lines Sn-1 are electrically connected with the grid electrode of the transistor T6, the influence of Feed Through voltage generated by stray capacitance Cgd in the transistor T6 when the switching voltage is shut off instantaneously can be weaken effectively through the stepwise low-potential, and the uniformity of luminance of the OLED can be further guaranteed.

Description

Image element circuit and driving method thereof and a kind of active array organic light emitting display device
Technical field
The present invention relates to organic light emitting display technical field, particularly relate to one and effectively can improve TFT device creepage I offthe OLED pixel circuit that the display brought bigger than normal is bad and driving method thereof and a kind of active array organic light emitting display device.
Background technology
In flat panel display, AMOLED(Active Matrix Organic Light EmittingDiode---active matrix organic light-emitting display device), active illuminating, fast response time, wide viewing angle, rich color and high brightness frivolous with it, low-power consumption, the advantage such as high-low temperature resistant, be applied in high-performance and large scale display, and progressively become the display technique of new generation in display field.
Current AMOLED display technique many employings LTPS(Low Temperature Poly-silicon-low temperature polycrystalline silicon) technique realizes, be because with general Amorphous SI(amorphous silicon) compared with technique, the thin film transistor (TFT) that LTPS realizes has higher electron mobility and the stability of Geng Gao.But, the device creepage I of the thin film transistor (TFT) that LTPS technique realizes offstability and the performance of device can be affected.Therefore I is reduced by compensation transistor cut-in voltage in prior art offthe impact brought improves the stability of display circuit.
The luminescence process of driving method shown in image element circuit shown in composition graphs 1 and Fig. 2 to image element circuit is described, and wherein VDD represents the first power supply, and VSS represents second source, and Vinit represents the 3rd power supply.
The t1 time period is initial phase: horizontal scanning line Sn-1 is low level, horizontal scanning line Sn, LED control signal En, data voltage signal Dm are high level, now only has transistor T6 conducting, OLED is closed, the grid voltage Vg of transistor T2 is initialised, now the grid voltage Vg=Vinit of transistor T2.
The t2 time period is data write phase: horizontal scanning line Sn-1, LED control signal En are high level, horizontal scanning line Sn, data voltage signal Dm are low level, now transistor T1 and T3 conducting, transistor T2 is with the form work of diode, the source voltage of transistor T2 is the voltage VDm of data voltage signal Dm, therefore the grid voltage Vg=VDm-│ Vth │ of transistor T2, Vth is the threshold voltage of transistor T2.
The t3 time period is glow phase: LED control signal En is low level, and horizontal scanning line Sn-1 and horizontal scanning line Sn is high level.LED control signal En makes the source voltage Vs of transistor T2 be VDD, and the grid voltage Vg of transistor T2 remains on VDm-│ Vth │; Voltage Vsg between the grid source electrode of transistor T2 obtains according to following formula: Vsg=Vs-Vg=VDD-(VDm-│ Vth │), then Vsg-│ Vth │=VDD-VDm.Even if the threshold voltage vt h of transistor T2 changes like this, the upper voltage of transistor T2 also can keep stable, and then keeps stable through the drive current of transistor T2, achieves compensation effect to a certain degree.But during actual pixels circuit working can not as embodied in above-mentioned formula ideal, because the grid of transistor T2 is electrically connected with the source electrode of transistor T6, therefore when the electric leakage/threshold voltage of transistor T6 changes, the grid voltage of transistor T2 can be had influence on, the leakage current that namely still can exist because of transistor T6 causes the instability of transistor T2 voltage, thus have influence on through transistor T2 drive current so that affect the stability of OLED drive current, destroy picture quality.
Summary of the invention
The OLED drive current de-stabilising effect picture quality that technical matters to be solved by this invention is image element circuit of the prior art because the leakage current of transistor and threshold voltage instability cause, thus provide a kind of can the image element circuit of offseting transistor threshold voltage fluctuation and driving method thereof, and provide the active array organic light emitting display device of this image element circuit of a kind of application and driving method.
For solving the problems of the technologies described above, the present invention is achieved by the following technical solutions:
The invention provides a kind of image element circuit, comprising: OLED, transistor T1-T6, capacitor C1, capacitor C2 and energy-storage travelling wave tube;
Described transistor T1, its grid is electrically connected with the first end of horizontal scanning line Sn, described capacitor C2 and the grid of described transistor T3; Its first end is electrically connected with second end of described transistor T4 and the first end of described transistor T2; Its second end is electrically connected with data voltage signal;
Described transistor T2, second end of its grid and the first end of the first end of described transistor T3, described transistor T6, described capacitor C2, second end of described capacitor C1 and the first end of described energy-storage travelling wave tube are electrically connected; Its second end is electrically connected with second end of described transistor T3 and the first end of described transistor T5;
Described transistor T4, its grid is electrically connected with the grid of LED control signal En and described transistor T5; Its first end is electrically connected with the first end of the first power supply and described capacitor C1;
Described transistor T5, its second end is electrically connected with the anode of described OLED;
Described transistor T6, its grid is electrically connected with the second end of horizontal scanning line Sn-1 and described energy-storage travelling wave tube; Its second end is connected with the 3rd power electric;
Described capacitor C1, its first end is connected with the first power electric;
Described energy-storage travelling wave tube, its second end is electrically connected with the grid of horizontal scanning line Sn-1, described transistor T6;
The negative electrode of described OLED is electrically connected with second source.
Above-mentioned image element circuit, described energy-storage travelling wave tube is capacitor C3.
Above-mentioned image element circuit, described capacitor C3 is more than or equal to 0.03PF.
Above-mentioned image element circuit, described capacitor C3 is more than or equal to 0.5PF.
Above-mentioned image element circuit, described transistor T1-T6 is P-channel metal-oxide-semiconductor transistor.
Above-mentioned image element circuit, described first power supply is high level power supply, and described second source is low level power.
The present invention also provides a kind of driving method driving above-mentioned image element circuit, and the scan period comprises the following time period:
Initialization: control lines sweep trace Sn, LED control signal En, data voltage signal are high level, horizontal scanning line Sn-1 is the above low level signal of second order;
Data write: control lines sweep trace Sn-1, LED control signal En are high level; Horizontal scanning line Sn, data voltage signal are low level;
Luminous: controlling LED control signal En is low level, and horizontal scanning line Sn-1, horizontal scanning line Sn, data voltage signal are high level.
Above-mentioned driving method, during described initialization in the stage, horizontal scanning line Sn-1 is quadravalence low level signal.
The present invention also provides a kind of active array organic light emitting display device, comprises above-mentioned image element circuit.
Above-mentioned organic light-emitting display device, the driving method described in employing drives described image element circuit.
Technique scheme of the present invention has the following advantages compared to existing technology:
(1) image element circuit of the present invention, by being in series with energy-storage travelling wave tube capacitor C3 between the grid and the grid of transistor T6 of transistor T2, the information of the threshold voltage of transistor T6 is equivalent to be stored on capacitor C3, when fluctuation occurs the threshold voltage of such transistor T6, can be compensated by the charging of capacitor C3 or electric discharge.The grid voltage that such scheme effectively prevent transistor T2 in prior art is caused the problem of non-uniform light by the effect of leakage of transistor T6.
(2) image element circuit of the present invention, described electric capacity C3 is more than or equal to 0.03PF, and further, described electric capacity C3 is more than or equal to 0.5PF.When selecting the size of capacitor C3, also the restriction in process conditions and domain space will be considered, because capacitor itself also needs to take certain space, in image element circuit preparation process, the size requiring comprehensive consideration capacitor C3 to the Luminescence Uniformity of image element circuit is combined according to the space that capacitor setting position is remaining, if such as designed for existing 4.6Inch, capacitor C3 can be designed as 0.1pF.And capacitor C3 selects by above-mentioned value, through overtesting, the conservation rate of the grid voltage of transistor T2 effectively can be improved.
(3) driving method of the present invention is second order low level signal or multistage low level signal at initial phase horizontal scanning line Sn-1, and the change procedure of voltage can be made comparatively mild.Because horizontal scanning line Sn-1 is electrically connected with the grid of transistor T6, effectively can be weakened the impact of the Feed Through voltage (leaping voltage) that transistor T6 internal parasitic capacitances Cgd produces when switching voltage is closed instantaneously by this stepped electronegative potential, the homogeneity of OLED luminescence can be ensured further.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein,
Fig. 1 is the image element circuit figure of image element circuit described in background technology of the present invention;
Fig. 2 is the driver' s timing figure of image element circuit described in background technology of the present invention;
Fig. 3 is the image element circuit figure of active array organic light emitting display device described in one embodiment of the invention;
Image element circuit figure described in Fig. 4 one embodiment of the invention;
Fig. 5 is driver' s timing figure described in one embodiment of the invention;
Driver' s timing figure described in Fig. 6 one embodiment of the invention.
In figure, Reference numeral is expressed as: 110-image element circuit, 120-scanner driver, 130-data driver, 140-emission control driver.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Describe according to certain exemplary embodiments of the present invention referring to accompanying drawing.Here, when the first element is described as " electrical connection " to the second element, the first element can be connected directly to the second element, or is indirectly connected to the second element through one or more add ons.Further, for the sake of clarity, concisely eliminate for fully understanding for the present invention not necessarily some element.In addition, identical Reference numeral refers to identical element all the time.
embodiment 1
The present embodiment provides a kind of image element circuit and driving method thereof, as shown in Figure 3, described image element circuit 110 is by data line Dm(m=1,2,3 ...) be electrically connected from data driver 130, by horizontal scanning line Sn(n value different expression different rows sweep trace) be electrically connected with scanner driver 120, by emissioning controling signal line En(n=1,2,3 ...) be electrically connected with emission control driver 140.As shown in Figure 4, each image element circuit comprises further: OLED, transistor T1-T6, capacitor C1, capacitor C2 and energy-storage travelling wave tube.
Described transistor T1, its grid is electrically connected with the first end of horizontal scanning line Sn, described capacitor C2 and the grid of described transistor T3; Its first end is electrically connected with second end of described transistor T4 and the first end of described transistor T2; Its second end is electrically connected with data voltage signal.
Described transistor T2, second end of its grid and the first end of the first end of described transistor T3, described transistor T6, described capacitor C2, second end of described capacitor C1 and the first end of described energy-storage travelling wave tube are electrically connected; Its second end is electrically connected with second end of described transistor T3 and the first end of described transistor T5.
Described transistor T4, its grid is electrically connected with the grid of LED control signal En and described transistor T5; Its first end is electrically connected with the first end of the first power supply and described capacitor C1.
Described transistor T5, its second end is electrically connected with the anode of described OLED.
Described transistor T6, its grid is electrically connected with the second end of horizontal scanning line Sn-1 and described energy-storage travelling wave tube; Its second end is connected with the 3rd power electric.
Described capacitor C1, its first end is connected with the first power electric.
Described energy-storage travelling wave tube, its second end is electrically connected with the grid of horizontal scanning line Sn-1, described transistor T6.
The negative electrode of described OLED is electrically connected with second source.
In the present embodiment, for each transistor, it comprises grid, first end and the second end, and first end and the second end should represent source electrode and drain electrode respectively.Described energy-storage travelling wave tube is the element that can realize charging and discharging, and energy-storage travelling wave tube described in the present embodiment selects the capacitor C3 shown in figure.
In the present embodiment, described first power supply is high level power supply, and described second source is low level power.Described transistor T1-T6 is polycrystalline SiTFT or metal oxide semiconductor films transistor.In above-mentioned image element circuit, the conducting situation of each transistor and the pass of its external voltage are:
When horizontal scanning line Sn is low level, transistor T1 and transistor T3 conducting;
When horizontal scanning line Sn-1 is low level, transistor T6 conducting;
When LED control signal En is low level, OLED is unlocked.
When horizontal scanning line Sn and horizontal scanning line Sn-1 is high level, when LED control signal En is low level, transistor T4 and transistor T5 conducting and OLED are opened, and realize luminous.
Adopt the foregoing circuit in the present embodiment, drive with the driving method shown in Fig. 2.Then:
The t1 time period: horizontal scanning line Sn-1 is low level, horizontal scanning line Sn, LED control signal En, data voltage signal Dm are high level, now only have transistor T6 conducting, OLED is closed, and the grid voltage Vg of transistor T2 is initialized to the voltage Vinit of the 3rd power supply.
The t2 time period: horizontal scanning line Sn-1, LED control signal En are high level, horizontal scanning line Sn, data voltage signal Dm are low level, now transistor T1 and T3 conducting, transistor T2 is with the form work of diode, the source voltage Vs of transistor T2 is the voltage VDm of data voltage signal Dm, the grid voltage of transistor T2 is Vg=VDm-│ Vth │, and Vth is the threshold voltage of driving transistors T2.
The t3 time period is glow phase: LED control signal En is low level, and horizontal scanning line Sn-1 and horizontal scanning line Sn is high level.LED control signal En makes the source voltage of transistor T2 be VDD, and the grid voltage of transistor T2 remains on VDm-│ Vth │; Voltage Vsg between the grid source electrode of transistor T2 obtains according to following formula: Vsg=Vs-Vg=VDD-(VDm-│ Vth │), then Vsg-│ Vth │=VDD-VDm.
Now, even if the threshold voltage fluctuation of transistor T6, owing to being in series with capacitor C3 between the grid and the grid of transistor T6 of transistor T2, the information of the threshold voltage of transistor T6 is equivalent to be stored on capacitor C3, when fluctuation occurs the threshold voltage of such transistor T6, can be compensated by the charging of capacitor C3 or electric discharge.Monitor the stability of N point voltage for when monitoring and do not arrange capacitor C3 to the stability of N point voltage after arranging capacitor C3, comparing result is as shown in table 1:
Table 1
C3(PF) Node N voltage retention
0 91.5%
0.03 92.1%
0.1 93.1%
0.3 95.2%
0.5 96.3%
As can be seen from Table 1, when capacitor C3 is 0, namely do not power up the situation of container C 3, now N point voltage conservation rate is 91.5%, and when capacitor C3 is 0.03PF, 01PF, 0.3PF, 0.5PF, N point voltage conservation rate has had obvious lifting.When capacitor C3 is 0.5PF, can obtain and improve four percentage points nearly than stability when not powering up container C 3, and this raising of four percentage points, for the homogeneity improving OLED luminescence, be very rare, effect has been highly significant.
Associative list 1, can be more than or equal to 0.03PF by preferred described electric capacity C3 in the present embodiment.Further, described electric capacity C3 is more than or equal to 0.5PF.When selecting the size of capacitor C3, also fresh water (FW) condition and domain space constraint will be considered, because capacitor itself also needs to take certain space, in image element circuit preparation process, the size requiring comprehensive consideration capacitor C3 to the Luminescence Uniformity of image element circuit is combined according to the space that capacitor setting position is remaining, if such as designed for existing 4.6Inch, capacitor C3 can be designed as 0.1pF.
embodiment 2
The present embodiment provides a kind of driving method driving image element circuit in embodiment 1, comprises the steps:
Initialization: control lines sweep trace Sn, LED control signal En, data voltage signal are high level, horizontal scanning line Sn-1 is the above low level signal of second order, wherein the Sn-1 of horizontal scanning line shown in Fig. 5 is second order low level signal (the first rank low-voltage V2, second-order low-voltage V3), the Sn-1 of horizontal scanning line shown in Fig. 6 is quadravalence low level signal (the first rank low-voltage V2, second-order low-voltage V3, the 3rd rank low-voltage V4, quadravalence low-voltage V5).
Data write: control lines sweep trace Sn-1, LED control signal En are high level; Horizontal scanning line Sn, data voltage signal are low level.
Luminous: controlling LED control signal En is low level, and horizontal scanning line Sn-1, horizontal scanning line Sn, data voltage signal are high level.
Because horizontal scanning line Sn-1 is electrically connected with the grid of transistor T6, therefore, if horizontal scanning line Sn-1 directly jumps to high level from low level at the end of the t1 time period, also the unexpected jump with regard to making the grid of transistor T6 have a voltage, the stray capacitance Cgd of transistor T6 inside can produce Feed Through voltage (leaping voltage).According to well-known to those skilled in the art, Feed Through voltage (leaping voltage) can cause show electrode voltage to have the voltage drop of a Feed Through voltage (leaping voltage), and has influence on the correctness of GTG display.And this Feed Through voltage (leaping voltage) is unlike horizontal scanning line Sn-1 is when driving, only impact just disappears quickly, but meeting one value affects the voltage of show electrode, until after the grid of transistor T6 is opened again by driving voltage next time.And the driving method in the present embodiment, within the time period of t1 shown in initial phase and Fig. 5, horizontal scanning line Sn-1 is the above low level signal of second order, the change procedure of voltage can be made comparatively mild, also just can weaken the impact of Feed Through voltage (leaping voltage).Thus, the homogeneity of OLED luminescence can be ensured further.And as preferred embodiment, the second order electronegative potential shown in Fig. 5 can be adopted, also can adopt three rank electronegative potentials, quadravalence electronegative potential etc.And emulate by experiment, extraordinary effect can be obtained during quadravalence electronegative potential shown in known employing Fig. 6.
embodiment 3
The present embodiment provides a kind of active array organic light emitting display device, as shown in Figure 3, comprising: some pixel cells 110, scanner driver 120, data driver 130 and emission control driver 140.Described pixel cell 110 is arranged in the intersection region of horizontal scanning line Sn and data line Dm in the matrix form, and be electrically connected with data driver 130 by data line Dm, be electrically connected with scanner driver 120 by horizontal scanning line Sn, by LED control signal line En(m=1,2,3 ...).
Be initialised during each pixel cell 110 provides the first time period of scan control signal at horizontal scanning line Sn, and the second time period of scan control signal that pixel cell 110 provides at horizontal scanning line Sn accepts the data-signal that provides from data voltage signal line Dm; During the 3rd time period, suitable level is transitted to after the scan control signal that horizontal scanning line Sn provides, thus provide electric current to the Organic Light Emitting Diode OLED arranged in each pixel cell 110, pixel cell 110 is launched and has with the light of data voltage signal corresponding bright to show image.
Wherein said image element circuit 110 adopts the image element circuit provided in embodiment 1, adopts to the driving method of described image element circuit 110 driving method provided in embodiment 2.
Meanwhile, pixel cell 110 receive provide from outside from the first power vd D, second source VSS and the 3rd power supply Vinit, the first power vd D and second source VSS is used separately as high level voltage source and low level voltage source; First power vd D and second source VSS is used as the driving power of pixel cell 110, the change of the voltage that the grid that the 3rd power supply Vinit is used for compensation transistor T2 causes due to leakage current.
Scanner driver 120 produces to be provided (such as with outside, there is provided from timing control unit) the corresponding scan control signal of scan control signal, the scan control signal produced by scanning monitor 120 is supplied to pixel cell 110 respectively by horizontal scanning line Sn and horizontal scanning line Sn-1.
Data driver 130 produces provides the data of (such as, providing from timing control unit) and the corresponding data-signal of data controlling signal with outside.The data-signal produced by data driver 130 is synchronously supplied to pixel cell 110 by data line D1 to Dm with sweep signal.
Emission control driver 140 produces the emissioning controling signal providing (such as, providing from timing control unit) with outside.The emissioning controling signal produced by emission control driver 140 is sequentially fed to LED control signal line line E1 to En, namely emissioning controling signal controls the launch time of pixel cell 110.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among protection scope of the present invention.

Claims (10)

1. an image element circuit, is characterized in that, comprising: OLED, transistor T1-T6, capacitor C1, capacitor C2 and energy-storage travelling wave tube;
Described transistor T1, its grid is electrically connected with the first end of horizontal scanning line Sn, described capacitor C2 and the grid of described transistor T3; Its first end is electrically connected with second end of described transistor T4 and the first end of described transistor T2; Its second end is electrically connected with data voltage signal;
Described transistor T2, second end of its grid and the first end of the first end of described transistor T3, described transistor T6, described capacitor C2, second end of described capacitor C1 and the first end of described energy-storage travelling wave tube are electrically connected; Its second end is electrically connected with second end of described transistor T3 and the first end of described transistor T5;
Described transistor T4, its grid is electrically connected with the grid of LED control signal En and described transistor T5; Its first end is electrically connected with the first end of the first power supply and described capacitor C1;
Described transistor T5, its second end is electrically connected with the anode of described OLED;
Described transistor T6, its grid is electrically connected with the second end of horizontal scanning line Sn-1 and described energy-storage travelling wave tube; Its second end is connected with the 3rd power electric;
Described capacitor C1, its first end is connected with the first power electric;
Described energy-storage travelling wave tube, its second end is electrically connected with the grid of horizontal scanning line Sn-1, described transistor T6;
The negative electrode of described OLED is electrically connected with second source.
2. image element circuit according to claim 1, is characterized in that:
Described energy-storage travelling wave tube is capacitor C3.
3. image element circuit according to claim 2, is characterized in that:
Described capacitor C3 is more than or equal to 0.03PF.
4. image element circuit according to claim 2, is characterized in that:
Described capacitor C3 is more than or equal to 0.5PF.
5., according to the arbitrary described image element circuit of claim 1-4, it is characterized in that:
Described transistor T1-T6 is P-channel metal-oxide-semiconductor transistor.
6. image element circuit according to claim 5, is characterized in that:
Described first power supply is high level power supply, and described second source is low level power.
7. drive a driving method for the arbitrary described image element circuit of claim 1-6, it is characterized in that, the scan period comprises the following time period:
Initialization: control lines sweep trace Sn, LED control signal En, data voltage signal are high level, horizontal scanning line Sn-1 is the above low level signal of second order;
Data write: control lines sweep trace Sn-1, LED control signal En are high level; Horizontal scanning line Sn, data voltage signal are low level;
Luminous: controlling LED control signal En is low level, and horizontal scanning line Sn-1, horizontal scanning line Sn, data voltage signal are high level.
8. driving method according to claim 7, is characterized in that, during described initialization in the stage, horizontal scanning line Sn-1 is quadravalence low level signal.
9. an active array organic light emitting display device, is characterized in that, comprises the arbitrary described image element circuit of claim 1-6.
10. active array organic light emitting display device according to claim 9, is characterized in that, adopts the driving method described in claim 7 or 8 to drive described image element circuit.
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Denomination of invention: Pixel circuit and its driving method and an active matrix organic light emitting display device

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