CN102890910B - Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof - Google Patents
Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof Download PDFInfo
- Publication number
- CN102890910B CN102890910B CN201210389785.7A CN201210389785A CN102890910B CN 102890910 B CN102890910 B CN 102890910B CN 201210389785 A CN201210389785 A CN 201210389785A CN 102890910 B CN102890910 B CN 102890910B
- Authority
- CN
- China
- Prior art keywords
- transistor
- emitting diode
- light emitting
- pixel
- transistor seconds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and a drive method thereof. The pixel drive circuit comprises a first transistor, a second transistor, a storage capacitor and a light emitting diode, wherein, the first transistor is a synchronous bi-gate TFT and the second transistor is an asynchronous bi-gate TFT. A synchronous bi-gate structure and an asynchronous bi-gate structure are introduced in on the basis of the traditional 2T1C circuit and a precharging voltage and a feedback line are added to the pixel drive circuit. Thus, the maintaining effect to data voltage at a non-gating stage of the storage capacitor is effectively improved. In addition, the threshold voltage compensation of the driving transistors is effectively realized. Thus, the uniformity and the stability of the luminance of displays are ensured. Compared with most pixel drive circuits which are adopted to realize data maintaining and threshold compensation, the transistors, the capacitors and the control lines are saved and the circuit structure is greatly simplified. Thus, the opening ratio and the resolution ratio are increased and the cost is reduced.
Description
Technical field
The invention belongs to flat display field, be specifically related to a kind of synchronous and asynchronous double grid TFT-OLED pixel-driving circuit and driving method thereof.
Background technology
It is little that active matrix organic light-emitting diode (Active Matrix Organic Light-Emitting Diode) AMOLED has volume, structure is simple, from main light emission, brightness is high, and image quality is good, and visible angle is large, low in energy consumption, the advantages such as the response time is short, thus cause extensive concern, become the display technique of future generation replacing liquid crystal most probably.
Current, mainly contain amorphous silicon film transistor, polycrystalline SiTFT for driving the thin film transistor (TFT) TFT of AMOLED.Due to the characteristic that OLED electric current drives, amorphous silicon film transistor cannot provide enough drive currents because carrier mobility is low, and thus polycrystalline SiTFT becomes the first-selection of driving OLED.In prior art, the pixel-driving circuit of the 2T1C of two transistor T10 and T20 and electric capacity C is usually adopted to be used for driving OLED, as shown in Figure 1.But, on the one hand, because the threshold voltage of transistor T20 can drift about along with the working time, thus cause the luminescence of OLED unstable; On the other hand, due to the existence of the leakage current of transistor T10, make the spread of voltage of electric capacity C, thus the luminescence that result also in OLED is unstable.And, because the drift of the threshold voltage of the transistor T20 of each pixel is different, increase or reduce, making the non-uniform light between each pixel.Therefore, the pixel-driving circuit of traditional two transistors electric capacity 2T1C has been not suitable for the display of high-quality AMOLED.In order to realize the threshold voltage compensation of driving tube, the various novel circuit structure of research is needed to drive pixel cell better.
But, so far the pixel-driving circuit of most AMOLED design otherwise adopt complicated circuit structure for realizing good threshold voltage compensation, or adopt simple circuit structure and fail well to realize valve value compensation.
Summary of the invention
In order to overcome defect and the deficiency of above-mentioned prior art, the invention provides a kind of synchronous and asynchronous double grid TFT-OLED pixel-driving circuit and driving method thereof.
One object of the present invention is to provide a kind of synchronous and asynchronous double grid TFT-OLED pixel-driving circuit.
Pixel-driving circuit of the present invention comprises: the first transistor, transistor seconds, memory capacitance and light emitting diode; Wherein, transistor seconds is asynchronous double-gated transistor;
One end ground connection of memory capacitance;
The drain electrode of the first transistor connects data line, and grid connects scan control line, and source electrode connects the ungrounded end of memory capacitance;
The drain electrode of transistor seconds is connected to the negative electrode of OLED and is connected with power lead by Organic Light Emitting Diode, and top grid connect the ungrounded end of memory capacitance, source ground, and bottom gate is connect pre-charge voltage and is connected with drain electrode by feedback line.
Transistor seconds is asynchronous double gate thin-film transistor, and namely top grid and bottom gate are by different Control of Voltage, and top grid connect the ungrounded end of memory capacitance, and bottom gate is connect pre-charge voltage and is connected with drain electrode by feedback line.Transistor seconds, as driving tube, drives organic light-emitting diode, and realizes valve value compensation by the feedback regulation effect of pre-charge voltage, makes the luminous homogeneous constant of each pixel.
Further, the first transistor of the present invention is synchronous double gate thin-film transistor, and namely top grid and bottom gate are by same electrical pressure-controlled, and double grid connects same scan control line.The first transistor, as switching tube, is written to the grid of transistor seconds for data voltage and is stored in memory capacitance and provides switch ways; Meanwhile, due to the double grid synchro control of synchronous double-gated transistor, efficiently reduce leakage current, make the voltage of memory capacitance keep stable.Utilize the feature that the leakage current of synchronous double-gated transistor is little, increase memory capacitance to the hold facility of data voltage, thus can reduce the size of required memory capacitance during non-gated, saves capacity area.
The first transistor and transistor seconds are polycrystalline SiTFT or zinc oxide thin-film transistor etc.
Another object of the present invention is the driving method providing a kind of synchronous and asynchronous double grid TFT-OLED pixel-driving circuit.
The driving method of pixel-driving circuit of the present invention comprises the following steps:
1) scanning and data voltage write phase: scan control line is high level, and data line is significant level, and the first transistor is conducting state, data voltage is written to the top grid of transistor seconds by the first transistor and remains to next frame renewal by memory capacitance;
2) the luminous and valve value compensation stage: scan control line is low level, data line is inactive level, the first transistor is off state, the voltage that memory capacitance keeps makes transistor seconds conducting, transistor seconds drives organic light-emitting diode, the gate source voltage of glow phase transistor seconds remains unchanged, thus it is constant until next frame image update to maintain Organic Light Emitting Diode brightness in a frame time.
When the threshold voltage shift of the transistor seconds as driving tube, drive current changes in the opposite direction, and the pre-charge voltage of transistor seconds changes in the same direction with threshold voltage, threshold voltage due to asynchronous double-gated transistor increases with pre-charge voltage and reduces, therefore the threshold voltage reverse excursion of transistor seconds, namely the drift of the threshold voltage of the transistor seconds as driving tube is restrained effectively by the feedback regulation effect of pre-charge voltage, achieve valve value compensation, thus maintain drive current and luminosity homogeneous constant.
Pixel-driving circuit of the present invention only introduces synchronous double-gate structure and an asynchronous double-gate structure on the basis of traditional 2T1C circuit, increase a pre-charge voltage and a feedback line, both the maintenance effect of memory capacitance in the non-gated stage to data voltage had been effectively increased, have effectively achieved again the threshold voltage compensation of driving transistors, thus ensure that homogeneity and the constancy of display lighting brightness.In other words, compared to major part for realizing data and keep and valve value compensation and 4T1C or the 4T2C pixel-driving circuit that adopts, save transistor, electric capacity and control line, enormously simplify circuit structure, thus improve aperture opening ratio and resolution and reduce and realize cost.
Beneficial effect of the present invention:
The synchronous and asynchronous double grid pixel-driven structure that the present invention proposes, realize data keep and valve value compensation with while keeping display brightness homogeneous constant, save the quantity of required transistor, electric capacity and control line, simplify circuit, save cost, reduce the area of unit pixel, thus can improve aperture opening ratio and display resolution.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the pixel-driving circuit of 2T1C structure of the prior art;
Fig. 2 is the circuit diagram of the present invention synchronous and asynchronous double grid TFT-OLED pixel-driving circuit;
Fig. 3 be one embodiment of the present of invention signal timing diagram.
Embodiment
Below in conjunction with accompanying drawing, by example, the present invention will be further described.
Embodiment
As shown in Figure 1, pixel-driving circuit of the present invention comprises: the first transistor T1, transistor seconds T2, memory capacitance C
sT, and Organic Light Emitting Diode OLED; Wherein, the first transistor T1 is synchronous double grid polycrystalline SiTFT, and transistor seconds T2 is asynchronous double grid polycrystalline SiTFT;
One end ground connection GND of memory capacitance;
The drain electrode of the first transistor T1 meets data line DATA, and double grid meets same scan control line SCAN, and source electrode meets the ungrounded end VG of memory capacitance, and the first transistor T1 is that data voltage is written to the top grid of transistor seconds T2 and is stored in memory capacitance C
sTswitch ways is provided;
The drain electrode of transistor seconds T2 is connected to the negative electrode VD of OLED OLED and is connected with power lead VDD by OLED, and top grid meet the ungrounded end VG of memory capacitance, source ground, and bottom gate is met pre-charge voltage VPRE and is connected with drain electrode VD by feedback line Lf.
During pixel-driving circuit work, the first transistor T1 realizes the selection of pixel cell as switching tube, and transistor seconds T2 is responsible for driving and the valve value compensation of OLED as driving tube.
As shown in Figure 3, the control method of pixel-driving circuit of the present invention comprises the following steps the sequential of each signal wire:
1) scanning and data voltage write (stage 1): scan control line SCAN voltage VSCAN is high level, data line DATA voltage VDATA is significant level, the first transistor T1 is switch-turn-ON states, data voltage VDATA by the first transistor T1 be written to transistor seconds T2 top grid and by memory capacitance C
sTremain to next frame to upgrade;
2) luminous and valve value compensation (stage 2): scan control line SCAN voltage VSCAN is low level, and data line DATA voltage VDATA is inactive level, and the first transistor T1 is off state, memory capacitance C
sTthe voltage of upper maintenance makes transistor seconds T2 conducting, transistor seconds T2 drives Organic Light Emitting Diode OLED luminous, glow phase transistor seconds gate source voltage VG-GND=VDATA remains unchanged, thus it is constant until next frame image update to maintain Organic Light Emitting Diode brightness in a frame time.
As the threshold voltage V of the transistor seconds T2 as driving tube
tHtime drift (increase or reduce), due to asynchronous double-gated transistor threshold voltage V
tHincrease with pre-charge voltage VPRE and reduce, therefore the threshold voltage reverse excursion of transistor seconds T2, achieve valve value compensation.
As the threshold voltage V of transistor seconds T2
tHduring increase, drive current I
oLEDchange in the opposite direction, i.e. I
oLEDreduce, driving voltage V
oLEDreduce, and the pre-charge voltage VPRE of driving tube T2 is with threshold voltage V
tHchange in the same direction, i.e. pre-charge voltage VPRE=VD=VDD-V
oLEDincrease, due to asynchronous double-gated transistor threshold voltage V
tHincrease with pre-charge voltage VPRE and reduce, therefore the threshold voltage V of transistor seconds T2
tHreverse excursion, i.e. V
tHreduce; As the threshold voltage V of transistor seconds T2
tHdrive current I when drift reduces
oLEDchange in the opposite direction, i.e. I
oLEDincrease, driving voltage V
oLEDincrease, and the pre-charge voltage VPRE of driving tube T2 is with threshold voltage V
tHchange in the same direction, i.e. VPRE=VD=VDD-V
oLEDreduce, due to asynchronous double-gated transistor threshold voltage V
tHreduce with pre-charge voltage VPRE and increase, therefore the threshold voltage V of transistor seconds T2
tHreverse excursion, i.e. V
tHincrease.The threshold voltage V of transistor seconds T2 is effectively inhibit by the feedback regulation effect of pre-charge voltage VPRE
tHdrift, achieve valve value compensation, thus maintain drive current and luminosity evenly with constant.
In pixel-driving circuit of the present invention, the heterogeneity of the threshold voltage of each pixel and drift can not affect the luminance difference of luminescent device OLED substantially.Luminescent device OLED brightness is directly proportional to drive current size.At sweep phase, data voltage VDATA is stored in holding capacitor C
sTuntil next frame, and in glow phase, the threshold voltage difference of different pixels point and same pixel different time is compensated by the feedback regulation effect of pre-charge voltage.Therefore the size of current that glow phase flows through each OLED is basic homogeneous constant, i.e. each pixel luminosity homogeneous constant.
It is finally noted that, the object publicizing and implementing mode is to help to understand the present invention further, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the content disclosed in embodiment, and the scope that the scope of protection of present invention defines with claims is as the criterion.
Claims (4)
1. a pixel-driving circuit, comprising: the first transistor T1, transistor seconds T2, memory capacitance CST and Organic Light Emitting Diode OLED; Wherein, described transistor seconds T2 is asynchronous double grid polycrystalline SiTFT;
One end ground connection GND of described memory capacitance CST;
The drain electrode of described the first transistor T1 meets data line DATA, grid meets scan control line SCAN, source electrode meets the ungrounded end VG of memory capacitance CST, and the top grid of described the first transistor T1 described transistor seconds T2 for data voltage is written to also are stored in described memory capacitance CST and provide switch ways;
The drain electrode of described transistor seconds T2 is met the negative electrode VD of described Organic Light Emitting Diode OLED and is connected with power lead VDD by Organic Light Emitting Diode OLED, top grid meet the ungrounded end VG of described memory capacitance CST, source ground, bottom gate is met pre-charge voltage VPRE and is connected with drain electrode VD by feedback line Lf.
2. pixel-driving circuit as claimed in claim 1, it is characterized in that, described the first transistor T1 is synchronous double gate thin-film transistor, and double grid connects same scan control line.
3. pixel-driving circuit as claimed in claim 1, it is characterized in that, described the first transistor T1 and transistor seconds T2 is polycrystalline SiTFT or zinc oxide thin-film transistor.
4. a driving method for pixel-driving circuit described in claim 1, is characterized in that, described driving method comprises the following steps:
1) scanning and data voltage write phase: scan control line is high level, data line is significant level, the first transistor T1 is conducting state, and data voltage is written to the top grid of transistor seconds T2 by the first transistor T1 and remains to next frame renewal by memory capacitance CST;
2) the luminous and valve value compensation stage: scan control line is low level, data line is inactive level, the first transistor T1 is off state, the voltage that memory capacitance CST keeps makes transistor seconds T2 conducting, transistor seconds T2 drives Organic Light Emitting Diode OLED luminous, the gate source voltage of glow phase transistor seconds T2 remains unchanged, thus it is constant until next frame image update to maintain Organic Light Emitting Diode OLED brightness in a frame time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210389785.7A CN102890910B (en) | 2012-10-15 | 2012-10-15 | Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210389785.7A CN102890910B (en) | 2012-10-15 | 2012-10-15 | Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102890910A CN102890910A (en) | 2013-01-23 |
| CN102890910B true CN102890910B (en) | 2015-06-10 |
Family
ID=47534399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210389785.7A Active CN102890910B (en) | 2012-10-15 | 2012-10-15 | Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102890910B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018068391A1 (en) * | 2016-10-14 | 2018-04-19 | 深圳市华星光电技术有限公司 | Amoled pixel driver circuit, and drive method |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014160203A (en) * | 2013-02-20 | 2014-09-04 | Sony Corp | Display unit and driving method of the same, and electronic apparatus |
| CN103117042B (en) * | 2013-02-22 | 2015-03-18 | 合肥京东方光电科技有限公司 | Pixel unit drive circuit, pixel unit drive method, pixel unit and display device |
| CN103545343A (en) * | 2013-10-28 | 2014-01-29 | 深圳丹邦投资集团有限公司 | High-accuracy voltage programming pixel circuit and OLED displayer |
| CN103927981B (en) * | 2014-03-24 | 2016-05-18 | 京东方科技集团股份有限公司 | Image element circuit and driving method thereof, display unit |
| CN103927985B (en) * | 2014-04-01 | 2016-04-06 | 深圳市华星光电技术有限公司 | A kind of pixel-driving circuit of OLED display, array base palte and respective display |
| CN104050918B (en) * | 2014-06-16 | 2016-02-03 | 上海和辉光电有限公司 | Pixel unit drive circuit and display device |
| CN105225637B (en) * | 2014-06-18 | 2018-01-26 | 上海和辉光电有限公司 | A kind of pixel compensation circuit |
| CN104282264B (en) * | 2014-09-26 | 2016-09-07 | 京东方科技集团股份有限公司 | A kind of active matrix driving oganic light-emitting display device |
| CN104282265B (en) | 2014-09-26 | 2017-02-01 | 京东方科技集团股份有限公司 | Pixel circuit, drive method thereof, an organic light-emitting display panel and display device |
| US10607556B2 (en) | 2014-11-07 | 2020-03-31 | The Hong Kong University Of Science And Technology | Driving scheme for ferroelectric liquid crystal displays |
| CN104517570B (en) * | 2014-12-15 | 2017-04-05 | 广东威创视讯科技股份有限公司 | A kind of LED display static state pulse amplitude control driving method and LED driver |
| CN104732927B (en) | 2015-04-09 | 2017-10-03 | 京东方科技集团股份有限公司 | A kind of image element circuit and its driving method and display device |
| CN105047131B (en) * | 2015-07-29 | 2018-07-13 | 深圳丹邦投资集团有限公司 | A kind of control method of AMOLED pixel circuit |
| CN106558280B (en) * | 2015-09-16 | 2020-11-10 | 中国科学院物理研究所 | Thin film transistor driving circuit |
| CN105632419B (en) * | 2016-03-15 | 2018-05-11 | 深圳市华星光电技术有限公司 | The compensation circuit of liquid crystal display device and its Organic Light Emitting Diode |
| CN105788532B (en) * | 2016-03-24 | 2018-04-03 | 东南大学 | A kind of active matrix organic light-emitting diode image element circuit and driving method |
| CN105741779B (en) * | 2016-03-24 | 2018-03-20 | 北京大学深圳研究生院 | A kind of image element circuit and its driving method based on double-gated transistor |
| CN105654904B (en) * | 2016-03-24 | 2018-02-23 | 东南大学 | A kind of AMOLED pixel circuit and driving method |
| CN105741781B (en) * | 2016-04-12 | 2018-10-26 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuits and image element driving method |
| CN106504700B (en) * | 2016-10-14 | 2018-03-06 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuits and driving method |
| CN106652910B (en) * | 2016-10-31 | 2019-12-24 | 昆山工研院新型平板显示技术中心有限公司 | Pixel circuit, driving method thereof and organic light emitting display |
| KR102566551B1 (en) * | 2016-12-05 | 2023-08-14 | 삼성디스플레이주식회사 | Display device and method for driving the same |
| CN106531086A (en) * | 2017-01-06 | 2017-03-22 | 昆山工研院新型平板显示技术中心有限公司 | Pixel circuit, display panel and display apparatus |
| CN108597444B (en) * | 2018-04-19 | 2020-08-14 | 东南大学 | Silicon-based OLED pixel circuit and method for compensating OLED electrical characteristic change thereof |
| TWI670702B (en) * | 2018-07-24 | 2019-09-01 | 友達光電股份有限公司 | Dual gate transistor circuit, pixel circuit and gate drive circuit therof |
| CN109061713B (en) * | 2018-08-08 | 2020-06-30 | 京东方科技集团股份有限公司 | Pixel circuit, array substrate, and X-ray intensity detection device and method |
| KR102646909B1 (en) * | 2019-01-24 | 2024-03-14 | 삼성디스플레이 주식회사 | Display device |
| CN109671391A (en) * | 2019-02-25 | 2019-04-23 | 深圳市华星光电半导体显示技术有限公司 | Pixel-driving circuit and display panel |
| CN110021265B (en) * | 2019-04-26 | 2021-01-12 | 上海天马微电子有限公司 | Pixel circuit and driving method thereof, display device and driving method |
| CN110189707A (en) * | 2019-05-30 | 2019-08-30 | 京东方科技集团股份有限公司 | A kind of pixel-driving circuit and its driving method, display device |
| CN110164361B (en) * | 2019-06-05 | 2020-12-25 | 京东方科技集团股份有限公司 | Pixel driving circuit and driving method thereof, and display panel |
| CN110491340B (en) * | 2019-07-25 | 2021-03-19 | 北京大学深圳研究生院 | Micro display pixel device, micro display device and compensation method |
| CN111402788A (en) * | 2020-04-08 | 2020-07-10 | 深圳市华星光电半导体显示技术有限公司 | Pixel circuit and display panel |
| CN112365846B (en) * | 2020-11-12 | 2021-10-08 | 深圳市华星光电半导体显示技术有限公司 | Pixel circuit and display device |
| CN112767882B (en) * | 2021-03-08 | 2022-02-08 | 东南大学 | Active matrix organic light emitting diode pixel compensation circuit and driving method thereof |
| CN114822384A (en) * | 2022-05-23 | 2022-07-29 | 深圳市华星光电半导体显示技术有限公司 | Pixel circuit and display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1532789A (en) * | 2003-03-21 | 2004-09-29 | 友达光电股份有限公司 | Active matrix organic light emitting diode pixel circuit capable of automatically compensating current |
| CN101650916A (en) * | 2008-08-08 | 2010-02-17 | 索尼株式会社 | Display device and electronic apparatus |
| CN101714870A (en) * | 2008-10-01 | 2010-05-26 | 三星电子株式会社 | Inverter, method of operating the same and logic circuit comprising inverter |
| CN102568373A (en) * | 2010-12-27 | 2012-07-11 | 上海天马微电子有限公司 | Organic light-emitting diode (LED) pixel circuit and display device |
-
2012
- 2012-10-15 CN CN201210389785.7A patent/CN102890910B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1532789A (en) * | 2003-03-21 | 2004-09-29 | 友达光电股份有限公司 | Active matrix organic light emitting diode pixel circuit capable of automatically compensating current |
| CN101650916A (en) * | 2008-08-08 | 2010-02-17 | 索尼株式会社 | Display device and electronic apparatus |
| CN101714870A (en) * | 2008-10-01 | 2010-05-26 | 三星电子株式会社 | Inverter, method of operating the same and logic circuit comprising inverter |
| CN102568373A (en) * | 2010-12-27 | 2012-07-11 | 上海天马微电子有限公司 | Organic light-emitting diode (LED) pixel circuit and display device |
Non-Patent Citations (1)
| Title |
|---|
| 几种OLED有源驱动电路中像素单元电路的分析;谢强;《液晶与显示》;20041231;第462页 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018068391A1 (en) * | 2016-10-14 | 2018-04-19 | 深圳市华星光电技术有限公司 | Amoled pixel driver circuit, and drive method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102890910A (en) | 2013-01-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102890910B (en) | Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof | |
| CN102982767B (en) | Pixel unit driving circuit, driving method and display device | |
| CN102930824B (en) | Pixel circuit and driving method and display device | |
| CN102651194B (en) | Voltage driving pixel circuit, driving method thereof and display panel | |
| CN103218970B (en) | Active matrix organic light emitting diode (AMOLED) pixel unit, driving method and display device | |
| US9852687B2 (en) | Display device and driving method | |
| CN103117042B (en) | Pixel unit drive circuit, pixel unit drive method, pixel unit and display device | |
| CN103258501B (en) | Pixel circuit and driving method thereof | |
| CN103714778B (en) | Image element circuit, the driving method of image element circuit and display device | |
| CN104485074B (en) | Pixel-driving circuit, method and display device | |
| CN104318899B (en) | Pixel unit driving circuit and method, pixel unit and display device | |
| CN104933993A (en) | Pixel driving circuit and driving method thereof and display device | |
| CN106935201B (en) | Pixel circuit and its driving method and active matrix/organic light emitting display | |
| WO2015085699A1 (en) | Oled pixel circuit, driving method, and display apparatus | |
| WO2019010873A1 (en) | Pixel driving circuit and driving method | |
| CN108777131B (en) | AMOLED pixel driving circuit and driving method | |
| CN103077680A (en) | Organic light-emitting diode (OLE) pixel driving circuit | |
| WO2016155183A1 (en) | Pixel circuit, display device and drive method therefor | |
| CN104715714A (en) | Pixel circuit, drive method thereof and active matrix organic light-emitting diode | |
| CN107393477B (en) | Top emitting AMOLED pixel circuit and its driving method | |
| CN102411893A (en) | Pixel driving circuit | |
| US11615747B2 (en) | Pixel circuit and driving method thereof, array substrate and display apparatus | |
| US11688345B2 (en) | Pixel driving circuit, driving method thereof and display panel | |
| CN203085133U (en) | Alternating current pixel driving circuit of active organic electroluminescence display | |
| CN102542977B (en) | Organic light emitting diode pixel structure, display panel and electronic display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20140612 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100871 HAIDIAN, BEIJING TO: 100015 CHAOYANG, BEIJING |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20140612 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Applicant after: BOE Technology Group Co., Ltd. Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Applicant before: Peking University |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |