CN106531086A - Pixel circuit, display panel and display apparatus - Google Patents
Pixel circuit, display panel and display apparatus Download PDFInfo
- Publication number
- CN106531086A CN106531086A CN201710010953.XA CN201710010953A CN106531086A CN 106531086 A CN106531086 A CN 106531086A CN 201710010953 A CN201710010953 A CN 201710010953A CN 106531086 A CN106531086 A CN 106531086A
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- China
- Prior art keywords
- electrode
- driving transistor
- transistor
- image element
- element circuit
- Prior art date
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
Abstract
The invention provides a pixel circuit, a display panel and a display apparatus. The pixel circuit comprises a switch transistor, a driving transistor, a storage capacitor and a light emitting diode. The driving transistor is a double-gate structure. A top gate of the driving transistor is connected to a first reference voltage source. A bottom gate of the driving transistor is connected to a data signal through the switch transistor. A first electrode of the driving transistor is connected to the first reference voltage source. A second electrode of the driving transistor is connected to a second reference voltage source through the light emitting diode. The top gate of the driving transistor is connected to the first reference voltage source. A migration rate of the driving transistor is increased and simultaneously a leakage current is maintained to be basically the same so that purposes of increasing a migration rate of an IGZO technology device and improving a driving capability of a semiconductor device are reached.
Description
Technical field
The present invention relates to display technology field, and in particular to a kind of image element circuit, display floater and display device.
Background technology
IGZO (indium gallium zinc oxide) is the diminution of indium gallium zinc oxide, and amorphous IGZO materials are to use
Channel layer materials in thin-film transistor technologies of new generation, are one kind of metal oxide (Oxide) panel technology.
(Organic Light Emitting Diode, have display screen power consumption can be made to be close to OLED using IGZO technologies
Machine light emitting diode), but cost is lower, and thickness is also only higher by 25% than OLED, and resolution ratio can reach full HD (full
HD, 1920*1080P) or even ultra high-definition (Ultra Definition, resolution ratio 4k*2k) rank degree.
IGZO be at present very it is popular be applied to OLED display in drive TFT (Thin Film Transistor, it is thin
Film transistor) substrate material, relative to LTPS (Low Temperature Poly-silicon, low temperature polycrystalline silicon) technique
Backplane technology, has the advantages of uniformity is good, and suitable large scale shows based on the TFT of IGZO techniques；But IGZO techniques TFT
Mobility is relatively low, and AMOLED (Active Matrix Organic Light Emitting Diode, organic of active matrix
Optical diode) device driven as electric current is shown, it is to need larger mobility.
Prior art improves the mobility of IGZO typically by the raising and improvement of technique, but itself has certain
The limit, for the raising effect of mobility is not fine.
Therefore, the mobility for how improving IGZO techniques TFT is the technical problem of those skilled in the art's urgent need to resolve.
The content of the invention
It is an object of the invention to provide a kind of image element circuit, display floater and display device, lift IGZO process devices
Mobility, so as to improve the driving force of semiconductor devices.
For achieving the above object, the present invention provides a kind of image element circuit, including switching transistor, driving transistor, storage
Electric capacity and light emitting diode, wherein, the driving transistor is double-gate structure, and the top-gated of the driving transistor is connected to one
First reference voltage source, the bottom gate of the driving transistor are connected to data-signal, the driving by the switching transistor
The first electrode of transistor is connected to one first reference voltage source, and the second electrode of the driving transistor passes through described luminous two
Pole pipe is connected to one second reference voltage source.
Optionally, the second electrode of the driving transistor is connected to the anode of the light emitting diode, and described luminous two
The negative electrode of pole pipe is connected to second reference voltage source.
Optionally, the grid of the switching transistor is connected to scanning signal, and the first electrode of the switching transistor connects
Data-signal is connected to, the second electrode of the switching transistor is connected to the bottom gate of the driving transistor.
Optionally, one end of the storage capacitance is connected to the bottom gate of the driving transistor, the storage capacitance it is another
One end is connected to the first electrode of the driving transistor.
Optionally, the first electrode is source electrode, and the second electrode is drain electrode；Or, the first electrode is drain electrode,
The second electrode is source electrode.
Optionally, the driving transistor is metal oxide thin-film transistor.
Optionally, the driving transistor includes being set in turn on substrate grid, gate insulator, metal oxide
Semiconductor layer, etching barrier layer, source/drain, passivation layer and conductive layer, wherein, the grid is bottom gate, a part of described
Source/drain is used as top-gated.
Optionally, the metal oxide semiconductor layer is IGZO layers.
Accordingly, the present invention also provides a kind of display floater, including above-mentioned image element circuit.
Accordingly, the present invention also provides a kind of display device, including above-mentioned display floater.
Compared with prior art, the present invention is provided image element circuit, display floater and display device, driving transistor is set
Double-gate structure is set to, wherein top-gated is connected to the first reference voltage source, and bottom gate is connected to data-signal by switching transistor, the
One electrode is connected to the first reference voltage source, and second electrode is connected to the second reference voltage source by the switching transistor, leads to
Cross and the top-gated of driving transistor is connected with the first reference voltage source, increased the mobility of driving transistor, while keeping leakage
Electric current is not changed in substantially, so as to reach the mobility for lifting IGZO process devices, improves the driving force of semiconductor devices
Purpose.
Description of the drawings
The structural representation of the image element circuit that Fig. 1 is provided by one embodiment of the invention；
The sectional view of the driving transistor that Fig. 2 is provided by one embodiment of the invention；
The Id-Vg curve synoptic diagrams that Fig. 3 is provided by one embodiment of the invention.
Specific embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is done into one
Step explanation.Certainly the specific embodiment is the invention is not limited in, general replacement well known to the skilled artisan in the art is also contained
Lid is within the scope of the present invention.
Secondly, the present invention has carried out detailed statement using schematic diagram, when present example is described in detail, for the ease of saying
Bright, schematic diagram, should not be to this as restriction of the invention not according to general ratio partial enlargement.
The core concept of the present invention is that driving transistor is set to double-gate structure, and wherein top-gated is connected to the first ginseng
Voltage source is examined, bottom gate is connected to data-signal by switching transistor, and first electrode is connected to the first reference voltage source, and second is electric
Pole is connected to the second reference voltage source by the switching transistor, by by the top-gated of driving transistor and the first reference voltage
Source connects, and increased the mobility of driving transistor, while keeping leakage current to be not changed in substantially, lifts IGZO works so as to reach
The mobility of skill device, improves the purpose of the driving force of semiconductor devices.
The structural representation of the image element circuit that Fig. 1 is provided by one embodiment of the invention, as shown in figure 1, the present invention is proposed
One image element circuit, including switching transistor SW, driving transistor DR, storage capacitance C and light emitting diode OLED, wherein, institute
It is double-gate structure to state driving transistor DR, and the top-gated of driving transistor DR is connected to one first reference voltage source VDD, described
The bottom gate of driving transistor DR is connected to data-signal VDTAT by switching transistor SW, driving transistor DR
First electrode is connected to one first reference voltage source VDD, and the second electrode of driving transistor DR passes through the light-emitting diodes
Pipe OLED is connected to one second reference voltage source VSS.
Specifically, the top-gated of driving transistor DR is connected to the first reference voltage source VDD, driving transistor DR
Bottom gate be connected to the second electrode of switching transistor SW, the first electrode of driving transistor DR is connected to the first ginseng
Voltage source VDD is examined, the second electrode of driving transistor DR is connected to the anode of the light emitting diode OLED, described luminous
The negative electrode of diode OLED is connected to the second reference voltage source VSS.The grid of switching transistor SW is connected to scanning signal
SCAN, the first electrode of switching transistor SW are connected to data-signal VDTAT, the second electrode of switching transistor SW
It is connected to the bottom gate of driving transistor DR.One end of storage capacitance C is connected to the bottom gate of driving transistor DR,
The other end of storage capacitance C is connected to the first electrode of driving transistor DR.
In the present embodiment, the first electrode is source electrode, and the second electrode is drain electrode；Or the first electrode is leakage
Pole, the second electrode are source electrode.The transistor adopted in all embodiments of the invention can be that thin film transistor (TFT) or field are imitated
Should manage or other characteristic identical devices.Preferably, driving transistor DR is film crystalline substance with switching transistor SW
Body pipe, it is furthermore preferred that driving transistor DR is metal oxide thin-film transistor with switching transistor SW.
The present invention increased moving for driving transistor by the top-gated of driving transistor is connected with the first reference voltage source
Shifting rate, while keeping leakage current to be not changed in substantially, so as to reach the mobility for lifting IGZO process devices, improves semiconductor device
The purpose of the driving force of part.
The sectional view of the driving transistor that Fig. 2 is provided by one embodiment of the invention, as shown in Fig. 2 the driving crystal
Grid 201 that pipe DR includes being set in turn on substrate 200, gate insulator 202, metal oxide semiconductor layer 203, etching
Barrier layer (etch stop layer, ESL) 204, source/drain 205, passivation layer (passivation, PVX) 206 and conduction
Layer 207, wherein, the grid 201 is bottom gate, and a part of source electrode 205 or drain electrode 205 are used as top-gated.
Specifically, grid material is formed with the substrate 200, the grid 201 is formed by exposure and etching；
Gate insulator 202 is formed with the grid 201 and the substrate 200 that exposes；On the gate insulator 202
Metal oxide semiconductor material is formed with, the metal oxide semiconductor layer 203, the gold are formed by exposure and etching
Category oxide semiconductor layer 203 is located at the surface of the grid 201；Then the metal oxide semiconductor layer 203 with
And etching barrier layer 204 on the gate insulator 202 for exposing, is formed, multiple the are formed with the etching barrier layer 204
One through hole, on the first through hole and part etching barrier layer 204, deposition has metal level, forms source/drain 205, institute
State source/drain 205 to be connected with the metal oxide semiconductor layer 203 by first through hole；The source/drain 205 with
And passivation layer 206 on the etching barrier layer 204 for exposing, is formed, multiple second through holes are formed on the passivation layer 206, in institute
Formation conductive layer 207 on the second through hole and part passivation layer 206 is stated, the conductive layer 207 passes through second through hole
It is connected with the source/drain 205；Third through-hole is formed with the conductive layer 207, the third through-hole is positioned at described in two
Between second through hole.
The substrate 200 is, for example, glass substrate, plastic base or stainless steel substrate, and the shape of the substrate can be flat
Face, curved surface or other are irregularly shaped.The material that the gate insulator 202 is adopted is, for example, oxide, nitride or oxygen nitrogen
Compound.The material that the etching barrier layer (etch stop layer, ESL) adopts is, for example, oxide, nitride or oxygen nitrogen
Compound.The source/drain 205 and conductive layer 207 can be using chromium (Cr), tungsten (W), titanium (Ti), thallium (Ta), molybdenum (Mo),
The monofilm of the metal or alloy such as aluminium (Al), copper (Cu), or using the laminated film being made up of multiple layer metal film, example
Such as, the complex thin film structure of Mo/Cu/Mo.The material that the passivation layer (passivation, PVX) 206 adopts for example, is aoxidized
Thing, nitride or oxynitrides.The top-gated (a part of source/drain 205) of driving transistor DR is connected to first
Reference voltage source VDD, bottom gate are connected to data-signal VDATA by switching transistor SW, by top-gated and the first reference voltage
The connection in source, increased the mobility of driving transistor, while keeping leakage current to be not changed in substantially, lift IGZO so as to reach
The mobility of process devices, improves the purpose of the driving force of semiconductor devices.
The Id-Vg curve synoptic diagrams that Fig. 3 is provided by one embodiment of the invention, as shown in figure 3, abscissa is voltage Vg,
Ordinate is electric current Ig, wherein (1) is the Id-Vg curves of the IGZO technique TFT devices using image element circuit of the present invention,
(2) it is the Id-Vg curves of IGZO technique TFT devices common in prior art, and the raceway groove of two IGZO technique TFT devices
With identical breadth length ratio.From figure 3, it can be seen that compared with common IGZO technique TFT devices, pixel of the present invention
The IGZO technique TFT devices of circuit possess higher electron mobility.
Accordingly, the present invention also provides a kind of display floater, and the display floater includes above-mentioned image element circuit.
There is in the display floater of the present embodiment above-mentioned image element circuit, therefore driving transistor be set to into double-gate structure,
Wherein top-gated is connected to the first reference voltage source, and bottom gate is connected to data-signal by switching transistor, and first electrode is connected to
First reference voltage source, second electrode are connected to the second reference voltage source by the switching transistor, by driving crystal
The top-gated of pipe is connected with the first reference voltage source, increased the mobility of driving transistor, while keeping leakage current not have substantially
Change, so as to reach the mobility for lifting IGZO process devices, improves the purpose of the driving force of semiconductor devices.
Accordingly, the present invention also provides a kind of display device, and the display device includes above-mentioned display floater.
Display device in the present embodiment has above-mentioned display floater, therefore driving transistor is set to double-gate structure,
Wherein top-gated is connected to the first reference voltage source, and bottom gate is connected to data-signal by switching transistor, and first electrode is connected to
First reference voltage source, second electrode are connected to the second reference voltage source by the switching transistor, by driving crystal
The top-gated of pipe is connected with the first reference voltage source, increased the mobility of driving transistor, while keeping leakage current not have substantially
Change, so as to reach the mobility for lifting IGZO process devices, improves the purpose of the driving force of semiconductor devices.
In sum, the present invention is provided image element circuit, display floater and display device, driving transistor are set to double
Grid structure, wherein top-gated are connected to the first reference voltage source, and bottom gate is connected to data-signal, first electrode by switching transistor
The first reference voltage source is connected to, second electrode is connected to the second reference voltage source by the switching transistor, by driving
The top-gated of dynamic transistor is connected with the first reference voltage source, increased the mobility of driving transistor, while keeping leakage current base
Originally it is not changed in, so as to reach the mobility for lifting IGZO process devices, improves the purpose of the driving force of semiconductor devices.
Foregoing description is only the description to present pre-ferred embodiments, not any restriction to the scope of the invention, this
Any change that the those of ordinary skill in bright field is done according to the disclosure above content, modification, belong to the protection of claims
Scope.
Claims (10)
1. a kind of image element circuit, it is characterised in that including switching transistor, driving transistor, storage capacitance and light-emitting diodes
Pipe, wherein, the driving transistor is double-gate structure, and the top-gated of the driving transistor is connected to the first reference voltage source, institute
The bottom gate for stating driving transistor is connected to data-signal by the switching transistor, and the first electrode of the driving transistor connects
One first reference voltage source is connected to, the second electrode of the driving transistor is connected to one second ginseng by the light emitting diode
Examine voltage source.
2. image element circuit as claimed in claim 1, it is characterised in that the second electrode of the driving transistor is connected to described
The anode of light emitting diode, the negative electrode of the light emitting diode are connected to second reference voltage source.
3. image element circuit as claimed in claim 1, it is characterised in that the grid of the switching transistor is connected to scanning letter
Number, the first electrode of the switching transistor is connected to a data-signal, and the second electrode of the switching transistor is connected to institute
State the bottom gate of driving transistor.
4. image element circuit as claimed in claim 3, it is characterised in that one end of the storage capacitance be connected to it is described drive it is brilliant
The bottom gate of body pipe, the other end of the storage capacitance are connected to the first electrode of the driving transistor.
5. the image element circuit as any one of Claims 1 to 4, it is characterised in that the first electrode is source electrode, described
Second electrode is drain electrode；Or, the first electrode is drain electrode, and the second electrode is source electrode.
6. the image element circuit as any one of Claims 1 to 4, it is characterised in that the driving transistor is metal oxygen
Compound thin film transistor (TFT).
7. image element circuit as claimed in claim 6, it is characterised in that the driving transistor includes being set in turn on substrate
Grid, gate insulator, metal oxide semiconductor layer, etching barrier layer, source/drain, passivation layer and conductive layer, its
In, the grid is bottom gate, and a part of source/drain is used as top-gated.
8. image element circuit as claimed in claim 7, it is characterised in that the metal oxide semiconductor layer is IGZO layers.
9. a kind of display floater, it is characterised in that include the image element circuit as any one of claim 1～8.
10. a kind of display device, it is characterised in that including the display floater described in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710010953.XA CN106531086A (en) | 2017-01-06 | 2017-01-06 | Pixel circuit, display panel and display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710010953.XA CN106531086A (en) | 2017-01-06 | 2017-01-06 | Pixel circuit, display panel and display apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106531086A true CN106531086A (en) | 2017-03-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710010953.XA Pending CN106531086A (en) | 2017-01-06 | 2017-01-06 | Pixel circuit, display panel and display apparatus |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09321547A (en) * | 1996-05-27 | 1997-12-12 | Nippon Telegr & Teleph Corp <Ntt> | Matching amplifier |
| CN102074186A (en) * | 2009-11-24 | 2011-05-25 | 索尼公司 | Display apparatus, method of driving the display device, and electronic device |
| CN102890910A (en) * | 2012-10-15 | 2013-01-23 | 北京大学 | Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof |
| CN104465788A (en) * | 2015-01-04 | 2015-03-25 | 京东方科技集团股份有限公司 | Thin film transistor, preparing method of thin film transistor, array substrate, preparing method of array substrate and display device |
| CN104732927A (en) * | 2015-04-09 | 2015-06-24 | 京东方科技集团股份有限公司 | Pixel circuit, drive method thereof and display device |
-
2017
- 2017-01-06 CN CN201710010953.XA patent/CN106531086A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09321547A (en) * | 1996-05-27 | 1997-12-12 | Nippon Telegr & Teleph Corp <Ntt> | Matching amplifier |
| CN102074186A (en) * | 2009-11-24 | 2011-05-25 | 索尼公司 | Display apparatus, method of driving the display device, and electronic device |
| CN102890910A (en) * | 2012-10-15 | 2013-01-23 | 北京大学 | Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof |
| CN104465788A (en) * | 2015-01-04 | 2015-03-25 | 京东方科技集团股份有限公司 | Thin film transistor, preparing method of thin film transistor, array substrate, preparing method of array substrate and display device |
| CN104732927A (en) * | 2015-04-09 | 2015-06-24 | 京东方科技集团股份有限公司 | Pixel circuit, drive method thereof and display device |
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Application publication date: 20170322 |