CN104217674A - Pixel unit drive circuit and method, pixel drive circuit and AMOLED (active matrix/organic light-emitting diode) display device - Google Patents
Pixel unit drive circuit and method, pixel drive circuit and AMOLED (active matrix/organic light-emitting diode) display device Download PDFInfo
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- CN104217674A CN104217674A CN201410234435.2A CN201410234435A CN104217674A CN 104217674 A CN104217674 A CN 104217674A CN 201410234435 A CN201410234435 A CN 201410234435A CN 104217674 A CN104217674 A CN 104217674A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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Abstract
The invention provides a pixel unit drive circuit and method, a pixel drive circuit and an AMOLED (active matrix/organic light-emitting diode) display device. The pixel unit drive circuit comprises a drive unit and a reverse bias control unit. Th drive unit is used for driving an OLED (organic light-emitting diode) and connected with a scanning line. The drive unit is connected with the OLED through the reverse bias control unit which is used for breaking the connection between the drive unit and the OLED and controlling the reverse bias of the OLED during the reverse bias period. The reverse bias period is a pre-selected period during the close stage of the scanning line in each scanning cycle. According to the arrangement, the OLED is prevented from staying in the direct current bias light-emitting state for the long term, thus polarization of the organic material of the OLED is reduced.
Description
Technical field
The present invention relates to display technique field, particularly relate to a kind of pixel unit drive circuit, method, pixel-driving circuit and AMOLED display device.
Background technology
In the prior art, due to OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) in direct drive luminescence display, the electric field of long-time driving DC voltage causes OLED inner ion polarity, form built in field, thus OLED threshold voltage is increased, greatly reduce the luminescence efficiency of OLED, shorten the OLED life-span.
As shown in Figure 1A, Figure 1B, DTFT and T that existing 2T1C pixel unit drive circuit comprises driving transistors DTFT, memory capacitance C1 and input transistors T, Figure 1A employing is n-type transistor, DTFT and T that Figure 1B adopts is p-type transistor, and C1 is memory capacitance, V
sCANfor scanning voltage, DTFT for driving Organic Light Emitting Diode D1, data voltage V
dATAinput DTFT by T, VDD is high level, and VSS is low level.
2T1C pixel unit drive circuit as shown in Figure 1A operationally, works as V
sCANduring for high level, driving voltage data voltage V
dATAinput DTFT by T, DTFT conducting, now the current potential of A point (node be connected with the anode of D1) is VDATA-Vth-Voled (Vth is the threshold voltage of DTFT), works as V
sCANduring for low level, the voltage be stored in C1 still can make DTFT be in conducting state, and now the current potential of A point is still V
dATA-Vth-Voled, Voled are the voltage difference between the anode of OLED and the negative electrode of OLED.As from the foregoing, the 2T1C pixel unit drive circuit as shown in Figure 1A, Figure 1B adds data voltage V by data line
dATAafter, just luminescence display always within the time of a frame, OLED is in direct current biasing luminance for a long time, the polarityization of organic material is accelerated, and causes the built in field of OLED to strengthen, and OLED threshold voltage increases, greatly reduce the luminescence efficiency of OLED, shorten the OLED life-span.2T1C pixel unit drive circuit shown in Figure 1A, Figure 1B is by the impact that driving tube Vth drifts about and OLED is aging.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of pixel unit drive circuit, method, pixel-driving circuit and AMOLED display device, to avoid OLED to be in direct current biasing luminance for a long time, to weaken the polarity of the organic material of OLED.
In order to achieve the above object, the invention provides a kind of pixel unit drive circuit, comprise the driver element for driving OLED be connected with sweep trace, also comprise reverse bias control module, described driver element is connected with OLED by described reverse bias control module;
Described reverse bias control module, for controlling the connection of the described driver element of disconnection and OLED in reverse-bias time section and controlling described OLED reverse bias;
Described reverse-bias time section is the time period chosen in advance in the stage of closing of the described sweep trace in every scan cycle.
During enforcement, described reverse bias control module comprises drive control transistor and bias control transistor;
Described driver element is connected with the anode of described OLED by described drive control transistor;
Bias voltage accesses the tie point of described drive control transistor and described OLED by described bias control transistor;
Described drive control transistor disconnects in described reverse-bias time section, and described bias control transistor is in the conducting of described reverse-bias time section;
Described bias voltage is less than the first driving voltage of the negative electrode of the directly described OLED of access;
The type of described drive control transistor and the type complementation of described bias control transistor.
During enforcement, described reverse bias control module comprises drive control transistor and bias control transistor;
Described driver element is connected with the negative electrode of described OLED by described drive control transistor;
Bias voltage accesses the tie point of described drive control transistor and described OLED by described bias control transistor;
Described drive control transistor disconnects in described reverse-bias time section, and described bias control transistor is in the conducting of described reverse-bias time section;
Described bias voltage is greater than the first driving voltage of the anode of the directly described OLED of access;
The type of described drive control transistor and the type complementation of described bias control transistor.
During enforcement, described driver element comprises data input module and driver module;
Described reverse bias control module, for not being in driver module and described OLED described in reverse-bias time section time control conducting when described sweep trace is opened and in described sweep trace closedown, and control to disconnect described driver module and described OLED in described reverse-bias time section;
Described data input module, is connected with described sweep trace, for writing data voltage when described sweep trace is opened to described driver module;
Described driver module, for storing this data voltage when described sweep trace is opened and drive described OLED according to this data voltage, and continues to drive described OLED by the data voltage stored when described sweep trace is closed and is not in reverse-bias time section.
During enforcement, described driver module comprises the driving transistors be connected between the second driving voltage input end and described reverse bias control module;
Described pixel unit drive circuit also comprises: compensating unit, for the threshold voltage that the gate source voltage by controlling described driving transistors in reverse-bias time section is described driving transistors, and control the threshold voltage compensating described driving transistors with the gate source voltage of described driving transistors when described sweep trace is opened and when described sweep trace is closed and is not in reverse-bias time section.
During enforcement, described compensating unit comprises compensation memory capacitance and compensatory control module;
The first end of described compensation memory capacitance, is connected with the grid of described driving transistors, and accesses the second driving voltage by described compensatory control module;
Second end of described compensation memory capacitance, is connected with the source electrode of described driving transistors by described compensatory control module;
Described compensatory control module, first end for controlling described compensation memory capacitance in reverse-bias time section accesses the second driving voltage, the second end controlling described compensation memory capacitance is connected with the source electrode of described driving transistors, and the voltage difference of the first end and the second end that control described compensation memory capacitance is the threshold voltage of described driving transistors, also for controlling the first end disconnection of described compensation memory capacitance and the connection of the second driving voltage input end when described sweep trace is opened and when described sweep trace closedown is not in reverse-bias time section, control the connection disconnecting the second end of described compensation memory capacitance and the source electrode of described driving transistors, with the threshold voltage making the gate source voltage of described driving transistors compensate described driving transistors.
During enforcement, the time period that the sweep trace in the reverse-bias time section in every scan cycle and adjacent lower scan cycle is opened is close to.
The present invention also provides a kind of pixel cell driving method, is applied to above-mentioned pixel unit drive circuit, it is characterized in that, comprising:
When sweep trace is opened and when described sweep trace closedown is not in reverse-bias time section, reverse bias control module controls conducting driver element and OLED;
In reverse-bias time section, reverse bias control module controls to disconnect described driver element and described OLED, and controls described OLED reverse bias.
Present invention also offers a kind of pixel-driving circuit, comprise the pixel unit drive circuit that N level is above-mentioned; N be greater than 1 integer;
Except first order pixel unit drive circuit, the bias control signal of every one-level pixel unit drive circuit postpones a clock period than the bias control signal of adjacent upper level pixel unit drive circuit.
Present invention also offers a kind of AMOLED display device, comprise above-mentioned pixel-driving circuit.
Compared with prior art, pixel unit drive circuit of the present invention, method, pixel-driving circuit and AMOLED display device, in the time period that sweep trace in every scan cycle is closed, choose a time period in advance as reverse-bias time section, in reverse-bias time section, reverse bias control module controls the connection disconnecting driver element and OLED, and control OLED reverse bias, thus avoid OLED to be in direct current biasing luminance for a long time, to weaken the polarity of the organic material of OLED, reduce the built in field of OLED, thus reduce the threshold voltage of OLED, improve the luminescence efficiency of OLED, improve the life-span of OLED.
Accompanying drawing explanation
Figure 1A, Figure 1B are the circuit diagrams of existing 2T1C pixel unit drive circuit;
Fig. 2 is the structured flowchart of the pixel unit drive circuit described in first embodiment of the invention;
Fig. 3 A is the structural representation of the pixel unit drive circuit described in second embodiment of the invention;
Fig. 3 B is the structural representation of the pixel unit drive circuit described in third embodiment of the invention;
Fig. 3 C is the structural representation of the pixel unit drive circuit described in fourth embodiment of the invention;
Fig. 4 is the structured flowchart of the pixel unit drive circuit described in fifth embodiment of the invention;
Fig. 5 is the structured flowchart of the pixel unit drive circuit described in sixth embodiment of the invention;
Fig. 6 is the structured flowchart of the pixel unit drive circuit described in seventh embodiment of the invention;
Fig. 7 is the circuit diagram of the pixel unit drive circuit described in eighth embodiment of the invention;
Fig. 8 is the signal timing diagram of the pixel unit drive circuit described in eighth embodiment of the invention;
Fig. 9 a, Fig. 9 b, Fig. 9 c are the equivalent circuit diagram of the pixel unit drive circuit described in the 8th embodiment in first stage, subordinate phase, phase III respectively;
Figure 10 is the structured flowchart of the pixel-driving circuit described in the embodiment of the present invention;
Figure 11 is the signal timing diagram of the pixel-driving circuit described in this embodiment of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The transistor adopted in all embodiments of the present invention can be all thin film transistor (TFT) or field effect transistor or the identical device of other characteristics.In embodiments of the present invention, for distinguishing transistor the two poles of the earth except grid, wherein will be called source electrode in a pole, another pole is called drain electrode.In addition, distinguish transistor can be divided into N-type transistor or P-type crystal pipe according to the characteristic of transistor.In embodiments of the present invention, concrete is that those skilled in the art can expect, therefore also in embodiments of the invention protection domain easily not making under creative work prerequisite when adopting N-type transistor or P-type crystal pipe to realize.
In embodiments of the present invention, first of N-type transistor can be extremely source electrode, and second of N-type transistor can be extremely drain electrode; First of P-type crystal pipe can be extremely drain electrode, and second of P-type crystal pipe can be extremely source electrode.
As shown in Figure 2, the pixel unit drive circuit described in the embodiment of the present invention, comprising:
The driver element 21 for driving OLED be connected with sweep trace SCAN;
And, reverse bias control module 22;
Described driver element 21 is connected with OLED by described reverse bias control module 22;
Described reverse bias control module 22, for controlling the connection of the described driver element 21 of disconnection and OLED in reverse-bias time section and controlling described OLED reverse bias;
Described reverse-bias time section is the time period chosen in advance in the stage of closing of the described sweep trace SCAN in every scan cycle;
In fig. 2, V1 is the first driving voltage of the negative electrode directly accessing OLED.
Fig. 2 is for end light emitting-type OLED structure, and the pixel unit drive circuit described in the embodiment of the present invention is equally also applicable to top light emitting-type OLED structure.
When practical operation, sweep trace SCAN is in every scan cycle, first open and close again, in the pixel unit drive circuit described in the embodiment of the present invention, in the time period that sweep trace SCAN in every scan cycle closes, choose a time period in advance as reverse-bias time section, in reverse-bias time section, reverse bias control module controls the connection disconnecting driver element 21 and OLED, and control OLED reverse bias, thus avoid OLED to be in direct current biasing luminance for a long time, to weaken the polarity of the organic material of OLED, reduce the built in field of OLED, thus reduce the threshold voltage of OLED, improve the luminescence efficiency of OLED, improve the life-span of OLED.
Pixel unit drive circuit described in the embodiment of the present invention be easy to realize, to top-illuminating OLED structure and end emitting OLED structure all applicable.
As shown in Figure 3A, concrete, described reverse bias control module can comprise drive control transistor TQ and bias control transistor TP;
Described driver element 21 is connected with the anode of described OLED by described drive control transistor TQ;
Bias voltage VP accesses the tie point of described drive control transistor TQ and described OLED by described bias control transistor;
Described drive control transistor TQ disconnects in described reverse-bias time section, and described bias control transistor TP is in the conducting of described reverse-bias time section;
Described bias voltage VP is less than the first driving voltage V1 of the negative electrode of the directly described OLED of access;
The type of TQ and the type complementation of TP.
In figure 3 a, the grid of TP and the grid of TQ all access bias control signal Ctrl, and TQ is n-type transistor, and TP is p-type transistor.When practical operation, as shown in Figure 3 B, TQ also can be made to be p-type transistor, and TP is n-type transistor, but when TP and TQ adopts bias control signal Ctrl access grid to control to open and turn off, the type of TQ and the type of TP need complementation.
Pixel unit drive circuit described in the embodiment of the present invention as shown in Figure 3A operationally, described bias voltage VP is less than the first driving voltage V1 of the negative electrode of the directly described OLED of access, so in reverse-bias time section, described drive control transistor TQ disconnects, described bias control transistor TP conducting, thus the cathode voltage that the voltage of the anode of OLED is VP, OLED is V1, VP is less than V1, therefore OLED reverse bias.
As shown in Figure 3 C, concrete, when the pixel unit drive circuit described in the embodiment of the present invention is applied to top light emitting-type OLED structure, described reverse bias control module can comprise drive control transistor TQ and bias control transistor TP;
Described driver element 21 is connected with the negative electrode of described OLED by described drive control transistor TQ;
Bias voltage VP accesses the tie point of described drive control transistor TQ and described OLED by described bias control transistor;
Described drive control transistor TQ disconnects in described reverse-bias time section, and described bias control transistor TP is in the conducting of described reverse-bias time section;
Described bias voltage VP is greater than the first driving voltage V1 of the anode of the directly described OLED of access;
The type of TQ and the type complementation of TP;
In embodiment as shown in Figure 3 C, TQ is n-type transistor, and TP is p-type transistor.
As shown in Figure 4, concrete, described driver element can comprise data input module 211 and driver module 212;
Described reverse bias control module 22, for not being in driver module and described OLED described in reverse-bias time section time control conducting when described sweep trace SCAN opens and in described sweep trace SCAN closedown, and control to disconnect described driver module and described OLED in described reverse-bias time section;
Described data input module 211, is connected with described sweep trace SCAN, for writing data voltage Vdata when described sweep trace SCAN opens to described driver module 212;
Described driver module 212, for storing this data voltage Vdata when described sweep trace SCAN opens and drive described OLED according to this data voltage Vdata, and continue to drive described OLED by the data voltage Vdata stored when described sweep trace SCAN closes and is not in reverse-bias time section.
As shown in Figure 5, concrete, described driver module 212 comprises the driving transistors DTFT be connected to for inputting between the second driving voltage input end of the second driving voltage V2 and described reverse bias control module 22;
Described pixel unit drive circuit also comprises: compensating unit 23, for the threshold voltage that the gate source voltage by controlling described driving transistors DTFT in reverse-bias time section is described driving transistors DTFT, and control the threshold voltage compensating described driving transistors DTFT with the gate source voltage of described driving transistors DTFT when described sweep trace SCAN opens and when described sweep trace SCAN closes and is not in reverse-bias time section.
As shown in Figure 6, concrete, described compensating unit comprises compensation memory capacitance Cs and compensatory control module 231;
The first end of described compensation memory capacitance Cs, is connected with the grid of described driving transistors DTFT, and accesses described second driving voltage V2 by described compensatory control module 231;
Second end of described compensation memory capacitance Cs, is connected by the source electrode of described compensatory control module 231 with described driving transistors DTFT;
Described compensatory control module 231, first end for controlling described compensation memory capacitance Cs in reverse-bias time section accesses the second driving voltage V2, the second end controlling described compensation memory capacitance Cs is connected with the source electrode of described driving transistors DTFT, and the voltage difference of the first end and the second end that control described compensation memory capacitance Cs is the threshold voltage of described driving transistors DTFT, also for controlling the first end disconnection of described compensation memory capacitance Cs and the connection of the second driving voltage input end of input the second driving voltage V2 when described sweep trace SCAN opens and when described sweep trace SCAN closedown is not in reverse-bias time section, control the connection disconnecting second end of described compensation memory capacitance Cs and the source electrode of described driving transistors DTFT, with the threshold voltage making the gate source voltage of described driving transistors DTFT compensate described driving transistors DTFT.
As shown in Figure 7, concrete, described driver element comprises data input transistors TD, driving transistors DTFT and drives memory capacitance C;
Described reverse bias control module comprises drive control transistor TQ and bias control transistor TP;
Described compensating unit comprises compensation memory capacitance Cs, the first compensatory control transistor T1 and the second compensatory control transistor T2;
Described data input transistors TD, grid is connected with sweep trace SCAN, the first pole access data voltage Vdata, and the first low level VSS is accessed by driving memory capacitance C in the second pole;
Described driving transistors DTFT, grid is connected with second pole of described data input transistors TD by described compensation memory capacitance Cs, and the first pole is connected by the anode of described drive control transistor TQ and OLED, the second pole access high level VDD;
The anode of OLED accesses the second low level VSS2 by described bias control transistor TP, and the negative electrode of OLED accesses the first low level VSS;
The grid of described drive control transistor TQ and the grid of described bias control transistor TP all access bias control signal Ctrl;
Described first compensatory control transistor T1, grid accesses described bias control signal Ctrl, the first pole access high level VDD, and the second pole is connected with the grid of described driving transistors DTFT;
Described second compensatory control transistor T2, grid accesses described bias control signal Ctrl, and the first pole is connected with first pole of described driving transistors DTFT, and the second pole is connected with second pole of described data input transistors TD.
In pixel unit drive circuit as shown in Figure 7, data input transistors TD, driving transistors DTFT and drive control transistor TQ are N-type transistor, bias control transistor TP, the first compensatory control transistor T1 and the second compensatory control transistor T2 are P-type crystal pipe, A point is the connected node of the grid of Cs and DTFT, and B point is the connected node between Cs and TD.
Fig. 8 is the scanning voltage V that the bias control signal Ctrl of pixel unit drive circuit as shown in Figure 7, sweep trace SCAN export
sCAN, data voltage Vdata sequential chart.Preferably, due in embodiments of the present invention, compensated stage and reverse-bias time section are the same time periods, and the time period that the reverse-bias time section of every scan cycle and the sweep trace in next cycle adjacent are opened is adjacent, namely compensated and carried out data input immediately, to ensure the effect of valve value compensation.
Fig. 9 a, Fig. 9 b, Fig. 9 c are the circuit diagram of pixel unit drive circuit as shown in Figure 7 at the equivalent electrical circuit of first stage, subordinate phase, phase III.
As illustrated in fig. 9, in the first stage, namely OLED is biased and the valve value compensation stage, Ctrl and V
sCANfor low level, T1, T2, TP open, TD and TQ closes, and DTFT is that a diode enters state of saturation in fact, and VDD is charged to C by DTFT, until the gate source voltage of DTFT (voltage difference namely between A point and B point) is Vth.The now voltage VB=VDD-Vth of the voltage VA=VDD of A point, B point, voltage VCs=VA-VB=VDD-(the VDD-Vth)=Vth at Cs two ends; TQ closes, and the guiding path of DTFT and OLED turns off; TP opens, and negative electrode access VSS, the VSS2<VSS of anode access VSS2, the OLED of OLED, make OLED be in reverse-bias state;
As shown in figure 9b, in subordinate phase, i.e. OLED glow phase, Ctrl and V
sCANfor high level, T1 and T2 closes, TD and TQ opens, TP closes, and Vdata writes, VB=Vdata, the voltage VC=VB=Vdata at C two ends, because the voltage of Cs can not suddenly change, therefore the A terminal voltage of VA=VB+VCs=Vdata+Vth, Cs drives DTFT, OLED is made to start luminescence, the gate source voltage Vgs=VA-Voled=Vdata+Vth-Voled of DTFT, Voled is the voltage difference between the anode of OLED and the negative electrode of OLED, flows through the electric current I oled=K (Vgs-Vth) of OLED
2=K (Vdata+Vth-Voled-Vth)
2=K (Vdata-Voled)
2;
As is shown in fig. 9 c, in the phase III, i.e. in the OLED luminous maintenance stage, Ctrl is high level, V
sCANfor low level, T1, T2 and TD close, and TQ opens, TP closes, Cs and C does not have the path of charge or discharge, according to principle of charge conservation, do not consume the loop of electric charge, therefore the electric charge of Cs and C, the voltage at two ends all remains unchanged, VC=Vdata, VCs=Vth, VB=Vdata, VA=Vdata+Vth, A point voltage is constant, and the electric current therefore flowing through OLED remains K (Vdata-Voled)
2, OLED keeps luminance during data voltage write.
From the principle Analysis of the above exemplary embodiments to pixel unit drive circuit of the present invention shown in Fig. 7, can find out, by increasing the drive control transistor of control OLED luminescence and the bias control transistor making OLED reverse, by the bias control signal of control linkage drive control transistor and bias control transistor, the time period chosen in advance in the stage that the described sweep trace of OLED in every scan cycle is closed realizes reverse bias, greatly improves the life-span of OLED.
Present invention also offers a kind of pixel cell driving method, be applied to above-mentioned pixel unit drive circuit, comprise:
When sweep trace is opened and when described sweep trace closedown is not in reverse-bias time section, reverse bias control module controls conducting driver element and OLED;
In reverse-bias time section, reverse bias control module controls to disconnect described driver element and described OLED, and controls described OLED reverse bias.
As shown in Figure 10, present invention also offers a kind of pixel-driving circuit, comprise the pixel unit drive circuit that N level is above-mentioned; N be greater than 1 integer; Ctrl1 is the bias control signal of access the 1st grade of pixel unit drive circuit, and Ctrl2 is the bias control signal of access the 2nd grade of pixel unit drive circuit, and CtrlN is the bias control signal of access N level pixel unit drive circuit.
As shown in figure 11, except first order pixel unit drive circuit, the bias control signal Ctrln of every one-level pixel unit drive circuit postpones a clock period than the bias control signal Ctrln-1 of adjacent upper level pixel unit drive circuit, n is greater than the integer that 1 is less than or equal to N, Ctrln is the bias control signal of access n-th grade of pixel unit drive circuit, Ctrln-1 is the bias control signal of access (n-1) level pixel unit drive circuit, SCANn is the sweep trace be connected with n-th grade of pixel unit drive circuit, SCANn-1 is the sweep trace be connected with (n-1) level pixel unit drive circuit.
Bias control signal in Figure 11 is P-type crystal Guan Shiwei example with bias control transistor, if bias control transistor is N-type transistor, bias control signal should be that high level is effective.
Present invention also offers a kind of AMOLED display device, comprise above-mentioned pixel-driving circuit.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a pixel unit drive circuit, comprises the driver element for driving OLED be connected with sweep trace, it is characterized in that, also comprise reverse bias control module, and described driver element is connected with OLED by described reverse bias control module;
Described reverse bias control module, for controlling the connection of the described driver element of disconnection and OLED in reverse-bias time section and controlling described OLED reverse bias;
Described reverse-bias time section is the time period chosen in advance in the stage of closing of the described sweep trace in every scan cycle.
2. pixel unit drive circuit as claimed in claim 1, it is characterized in that, described reverse bias control module comprises drive control transistor and bias control transistor;
Described driver element is connected with the anode of described OLED by described drive control transistor;
Bias voltage accesses the tie point of described drive control transistor and described OLED by described bias control transistor;
Described drive control transistor disconnects in described reverse-bias time section, and described bias control transistor is in the conducting of described reverse-bias time section;
Described bias voltage is less than the first driving voltage of the negative electrode of the directly described OLED of access;
The type of described drive control transistor and the type complementation of described bias control transistor.
3. pixel unit drive circuit as claimed in claim 1, it is characterized in that, described reverse bias control module comprises drive control transistor and bias control transistor;
Described driver element is connected with the negative electrode of described OLED by described drive control transistor;
Bias voltage accesses the tie point of described drive control transistor and described OLED by described bias control transistor;
Described drive control transistor disconnects in described reverse-bias time section, and described bias control transistor is in the conducting of described reverse-bias time section;
Described bias voltage is greater than the first driving voltage of the anode of the directly described OLED of access;
The type of described drive control transistor and the type complementation of described bias control transistor.
4. the pixel unit drive circuit as described in claim arbitrary in claims 1 to 3, is characterized in that, described driver element comprises data input module and driver module;
Described reverse bias control module, for not being in driver module and described OLED described in reverse-bias time section time control conducting when described sweep trace is opened and in described sweep trace closedown, and control to disconnect described driver module and described OLED in described reverse-bias time section;
Described data input module, is connected with described sweep trace, for writing data voltage when described sweep trace is opened to described driver module;
Described driver module, for storing this data voltage when described sweep trace is opened and drive described OLED according to this data voltage, and continues to drive described OLED by the data voltage stored when described sweep trace is closed and is not in reverse-bias time section.
5. pixel unit drive circuit as claimed in claim 4, is characterized in that,
Described driver module comprises the driving transistors be connected between the second driving voltage input end and described reverse bias control module;
Described pixel unit drive circuit also comprises: compensating unit, for the threshold voltage that the gate source voltage by controlling described driving transistors in reverse-bias time section is described driving transistors, and control the threshold voltage compensating described driving transistors with the gate source voltage of described driving transistors when described sweep trace is opened and when described sweep trace is closed and is not in reverse-bias time section.
6. pixel unit drive circuit as claimed in claim 5, is characterized in that, described compensating unit comprises compensation memory capacitance and compensatory control module;
The first end of described compensation memory capacitance, is connected with the grid of described driving transistors, and accesses the second driving voltage by described compensatory control module;
Second end of described compensation memory capacitance, is connected with the source electrode of described driving transistors by described compensatory control module;
Described compensatory control module, first end for controlling described compensation memory capacitance in reverse-bias time section accesses the second driving voltage, the second end controlling described compensation memory capacitance is connected with the source electrode of described driving transistors, and the voltage difference of the first end and the second end that control described compensation memory capacitance is the threshold voltage of described driving transistors, also for controlling the first end disconnection of described compensation memory capacitance and the connection of the second driving voltage input end when described sweep trace is opened and when described sweep trace closedown is not in reverse-bias time section, control the connection disconnecting the second end of described compensation memory capacitance and the source electrode of described driving transistors, with the threshold voltage making the gate source voltage of described driving transistors compensate described driving transistors.
7. pixel unit drive circuit as claimed in claim 5, is characterized in that, the time period that the sweep trace in the reverse-bias time section in every scan cycle and adjacent lower scan cycle is opened is close to.
8. a pixel cell driving method, is applied to the pixel unit drive circuit as described in claim arbitrary in claim 1 to 7, it is characterized in that, comprising:
When sweep trace is opened and when described sweep trace closedown is not in reverse-bias time section, reverse bias control module controls conducting driver element and OLED;
In reverse-bias time section, reverse bias control module controls to disconnect described driver element and described OLED, and controls described OLED reverse bias.
9. a pixel-driving circuit, is characterized in that, comprises the pixel unit drive circuit of N level as described in claim arbitrary in claim 1 to 7; N be greater than 1 integer;
Except first order pixel unit drive circuit, the bias control signal of every one-level pixel unit drive circuit postpones a clock period than the bias control signal of adjacent upper level pixel unit drive circuit.
10. an AMOLED display device, is characterized in that, comprises pixel-driving circuit as claimed in claim 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410234435.2A CN104217674B (en) | 2014-05-29 | 2014-05-29 | Pixel unit drive circuit and method, pixel drive circuit and AMOLED (active matrix/organic light-emitting diode) display device |
| PCT/CN2014/085388 WO2015180276A1 (en) | 2014-05-29 | 2014-08-28 | Pixel unit drive circuit and method, pixel drive circuit and amoled display apparatus |
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| CN201410234435.2A CN104217674B (en) | 2014-05-29 | 2014-05-29 | Pixel unit drive circuit and method, pixel drive circuit and AMOLED (active matrix/organic light-emitting diode) display device |
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| WO2015180276A1 (en) | 2015-12-03 |
| CN104217674B (en) | 2017-01-25 |
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