CN102651194A - Voltage driving pixel circuit, driving method thereof and display panel - Google Patents

Voltage driving pixel circuit, driving method thereof and display panel Download PDF

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Publication number
CN102651194A
CN102651194A CN2011102620880A CN201110262088A CN102651194A CN 102651194 A CN102651194 A CN 102651194A CN 2011102620880 A CN2011102620880 A CN 2011102620880A CN 201110262088 A CN201110262088 A CN 201110262088A CN 102651194 A CN102651194 A CN 102651194A
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transistor
grid
driving
driving transistors
connects
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CN102651194B (en
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吴仲远
王刚
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US13/698,003 priority patent/US8941309B2/en
Priority to PCT/CN2012/081012 priority patent/WO2013034075A1/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/60—Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0852—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory with more than one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • G09G3/3291—Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of El Displays (AREA)

Abstract

The invention discloses a voltage driving pixel circuit which relates to the technical field of organic light emitting display. The voltage driving pixel circuit comprises a driving transistor, a maintain transistor, a switching transistor, a compensation transistor, a storage capacitor and an OLED (Organic Light Emitting Diode) device, wherein the grid electrode of the switching transistor is connected with a grid line, the source electrode of the switching transistor is connected with a data line, and the drain electrode of the switching transistor is connected with one end of the storage capacitor and the source electrode of the maintain transistor; the grid electrode of the maintain transistor is connected with a first control signal line used for controlling the conduction of the maintain transistor, and the drain electrode of the maintain transistor is connected with the grid electrode of the driving transistor; the grid electrode of the compensation transistor is connected with a second control signal line used for controlling the conduction of the compensation transistor, the source electrode of the compensation transistor is connected with the drain electrode of the driving transistor, and the drain electrode of the compensation transistor is connected with the grid electrode of the driving transistor; the source electrode of the driving transistor is connected with the other end of the storage capacitor and the anode of the OLED device; both the drain electrode of the driving transistor and the source electrode of the drive transistor are connected with a first power supply line; and the cathode of the OLED device is connected with a second power supply line. According to the voltage driving pixel circuit, the nonuniformity of the threshold voltage of an N type TFT (Thin Film Transistor) driving tube and the OLED nonuniformity are effectively compensated.

Description

Driven image element circuit and driving method thereof, display panel
Technical field
The present invention relates to the organic light emitting display technical field, particularly a kind of driven image element circuit and driving method thereof, display panel.
Background technology
(Organic Electroluminesence Display OLED) is applied in the high-performance demonstration as a kind of current mode luminescent device the organic light emitting display diode more and more.The Traditional passive matrix/organic light emitting shows (Passive Matrix OLED) increase along with display size, needs the driving time of shorter single pixel, thereby needs to increase transient current, increases power consumption.The application of big electric current simultaneously can cause on the ITO line pressure drop excessive, and makes the OLED WV too high, and then reduces its efficient.And active matrix organic light-emitting shows that (Active Matrix OLED AMOLED) through the switching tube input OLED electric current of lining by line scan, can address these problems well.
But in the AMOLED back plate design, there is the heterogeneity problem of the brightness between pixel and the pixel.
At first, AMOLED adopts thin film transistor (TFT) (TFT) to make up image element circuit and for the OLED device corresponding electric current is provided.Low-temperature polysilicon film transistor (LTPS TFT) or the oxide thin film transistors (Oxide TFT) of adopting more.Compare with general amorphous silicon film transistor (amorphous-Si TFT, a-Si TFT), LTPS TFT and Oxide TFT have higher mobility and stable properties more, are more suitable for being applied to during AMOLED shows.But because the limitation of crystallization process; For the LTPSTFT that on the large-area glass substrate, makes; Usually because such as having heterogeneity on the electrical parameters such as threshold voltage, mobility; This heterogeneity can be converted into the current difference and the luminance difference of OLED display device, and by the perception of human eye institute, i.e. moire (mura) phenomenon.Though the homogeneity of Oxide TFT technology is better, and is similar with a-Si TFT, under long-time pressurization and high temperature; Drift can appear in its threshold voltage; Because display frame is different, the threshold drift amount of panel each several part TFT is also different, can cause display brightness difference; Because the preceding with it images displayed of this species diversity is relevant, therefore often is rendered as ghost phenomena.
Second; Show in the application in large scale; Because there is certain resistance in the backboard power lead; And the drive current of all pixels is all provided by ARVDD, and it is high than the supply voltage in territory, far field from the power supply position therefore in backboard, to compare near the supply voltage of the ARVDD power supply power supply band of position, and this phenomenon is called as resistance drop (IR Drop).Because the voltage of ARVDD is relevant with electric current, IR Drop also can cause the current difference of zones of different, and then when showing, produces moire.Adopt the LTPS technology of P-Type TFT structure pixel cell especially responsive to this problem, because its MM CAP is connected between ARVDD and the TFT grid, the voltage of ARVDD changes, and can directly influence the Vgs of drive TFT pipe.
The 3rd, the OLED device when vapor deposition because the thickness inequality also can cause the heterogeneity of electric property.For adopting N-Type TFT to make up the a-Si or the Oxide TFT technology of pixel cell; Its MM CAP is connected between drive TFT grid and the OLED anode; When data voltage is transferred to grid; If each pixel OLED anode voltage is different, then the Vgs of actual loaded on TFT is also different, thereby because the drive current difference causes display brightness difference.
AMOLED can be divided into three major types according to driving type: digital, current type and voltage-type.Wherein, Digital driving method is through realizing GTG with TFT as the mode of switch controlling and driving time; Need not to compensate heterogeneity, but its frequency of operation increases with display size and rises at double, causes very big power consumption; And reach the physics limit of design within the specific limits, therefore be not suitable for large scale and show and use.Current type drives method and realizes GTG through the electric current that varies in size directly is provided to the mode of driving tube; It can compensate TFT heterogeneity and IR Drop preferably; But when writing low GTG signal; Little electric current can cause the write time long to stray capacitance charging bigger on the data line, and this problem is especially serious and be difficult to overcome in large scale shows.Voltage-type driving method and traditional AMLCD driving method are similar, by drive IC a voltage signal of representing GTG are provided, and this voltage signal can be converted into the current signal of driving tube in image element circuit inside; Thereby driving OLED realizes intensity gray scale; It is fast that this method has actuating speed, realizes simple advantage, is fit to drive large size panel; By industry-wide adoption, but need extra TFT and the capacitor element of design to compensate TFT heterogeneity, IR Drop and OLED heterogeneity.
Fig. 1 is 2 TFT transistors of Traditional use, 1 voltage driven type image element circuit structure (2T1C) that electric capacity is formed.Wherein switch transistor T 2 is with the grid of the voltage transmission on the data line to driving tube T1; Driving tube T1 is converted into corresponding current supply OLED device with this data voltage; When operate as normal, driving tube T1 should be in the saturation region, in the sweep time of delegation, steady current is provided.Its electric current can be expressed as:
I OLED = 1 2 μ n · C OX · W L · ( V data - V oled - V th ) 2
μ wherein nBe carrier mobility, C OXBe gate oxide electric capacity, W/L is the transistor breadth length ratio, V DataBe data voltage, V OledBe the OLED WV, for all pixel cells are shared V TnThreshold voltage for transistor T 1.Can know by following formula, if the V between the different pixels unit ThDifference, then electric current there are differences.If the V of pixel ThDrift about in time, then possibly cause first after-current different, cause ghost.And, also can cause current difference because OLED device heterogeneity causes OLED WV difference.
Have towards the heteropical dot structure of Vth heterogeneity, drift and OLED a variety of, to large scale, high-resolution back plate design, need simple in structure, adopt the less image element circuit structure of components and parts.
Like the structure in the list of references [1], as shown in Figure 2, this structure only can compensate Vth heterogeneity and the drift of driving tube T4, but can not compensate the OLED heterogeneity.
Like the structure in the list of references [2], as shown in Figure 3, this structure can compensate Vth heterogeneity, drift and the OLED heterogeneity of driving tube T1, but needs 6 TFT and 1 electric capacity, complex structure.
Like the structure in the list of references [3], as shown in Figure 4, this structure only can compensate heterogeneity and the drift of driving tube T1, can not compensate the OLED heterogeneity.
Like the structure in the list of references [4], as shown in Figure 5, this structure can compensate the heteropical influence of Vth heterogeneity, drift and OLED, but needs 5T2C, is not easy to realize the design of high aperture.
In sum, in the design of AMOLED dot structure, driving circuit can't solve TFT heterogeneity, IR Drop and OLED heterogeneity problem well.
List of references is following:
[1]“A?New?a-Si:H?Thin-Film?Transistor?Pixel?Circuit?for?Active-Matrix?Organic?Light-Emitting?Diodes”IEEE?ELECTRON?DEVICE?LETTERS，VOL.24，NO.9，SEPTEMBER?2003.
[2]“A?New?a-Si:H?TFT?Pixel?Circuit?Compensating?the?Threshold?Voltage?Shift?of?a-Si:H?TFT?and?OLED?for?Active?Matrix?OLED”IEEE?ELECTRON?DEVICE?LETTERS，VOL.26，NO.12，DECEMBER?2005.
[3]“A?New?Pixel?Circuit?for?Active?Matrix?Organic?Light?Emitting?Diodes”IEEE?ELECTRON?DEVICE?LETTERS，VOL.23，NO.9，SEPTEMBER?2002.
[4]“Amorphous?Oxide?TFT?Backplane?for?Large?Size?AMOLED?TVs”SID?2010.
Summary of the invention
The technical matters that (one) will solve
The technical matters that the present invention will solve is: how under the simple relatively situation of circuit structure, to compensate the threshold voltage heterogeneity and the OLED heterogeneity of N type TFT driving transistors effectively, thereby promote display effect.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of driven image element circuit, comprising: driving transistors, maintenance transistor, switching transistor, compensation transistor, MM CAP and OLED device,
The grid of said switching transistor connects grid line, and source electrode connects data line, and drain electrode connects an end and the transistorized source electrode of said maintenance of said MM CAP, is used for the writing of voltage signal of control data line;
The transistorized grid of said maintenance connects first control signal wire that is used to control its conducting, and drain electrode connects the grid of said driving transistors, is used to keep the grid voltage of said driving transistors;
The grid of said compensation transistor connects second control signal wire that is used to control its conducting, and source electrode connects the drain electrode of said driving transistors, and drain electrode connects the grid of said driving transistors;
The source electrode of said driving transistors connects the other end of MM CAP and the anode of said OLED device, is used to drive said OLED device;
The drain electrode of said driving transistors all is connected first power lead with the source electrode of compensation transistor;
The negative electrode of said OLED device connects the second source line.
The present invention also provides a kind of driving method of above-mentioned driven image element circuit, may further comprise the steps:
S1: the said driving transistors of conducting, maintenance transistor and switching transistor, oppositely by said OLED device, the source electrode preliminary filling that makes said driving transistors is to low level;
S2: the said compensation transistor of conducting, turn-off said maintenance transistor, go into to be used to compensate the threshold voltage according of said driving transistors for said MM CAP preliminary filling;
S3: turn-off said switching transistor and compensation transistor, and said maintenance transistor of conducting and OLED device, keep the grid voltage of said driving transistors, utilize the said OLED device of driven that is stored in the said MM CAP luminous.
Wherein, said step S1 specifically comprises:
Import high power level to said data line and second source line; Import high switch level to said first control signal wire and grid line, the said maintenance transistor of conducting, switching transistor and driving transistors, said second control signal wire input low switch level; Turn-off said compensation transistor; Said first power lead connects low power level, and said OLED device is ended, and the source electrode of said driving transistors is discharged to said low power level.
Wherein, said step S2 specifically comprises:
Change the data voltage of said data line voltage to present frame; Said first power lead input direct current datum; Said first control signal wire input low switch level turn-offs said maintenance transistor, and said second control signal wire is imported high switch level; The said compensation transistor of conducting makes said MM CAP preliminary filling go into to be used to compensate the threshold voltage according of said driving transistors.
Wherein.Step S3 specifically comprises:
Said grid line and second control signal wire input low switch level; Turn-off said switching transistor and compensation transistor, said first control signal wire is imported high switch level, the said maintenance transistor of conducting; Said first power lead connects high power level; Said second source line connects low power level, and the said OLED device of conducting utilizes the said OLED device of driven that is stored in the said MM CAP luminous.
The present invention also provides a kind of display panel, comprises above-mentioned driven image element circuit.
Wherein, said driven image element circuit is formed on the array base palte, and said array base palte is provided with many data lines and grid line, and said many data lines and grid line define a plurality of described driven image element circuits; Said array base palte also comprises chip for driving, is used to said grid line, data line, first control signal wire and second control signal wire clock signal is provided, for said first power lead and second source line provide power supply signal.
(3) beneficial effect
Compensate the threshold voltage heterogeneity and the OLED heterogeneity of N type TFT driving tube effectively through driven image element circuit of the present invention and driving method thereof, reached better display effect.
Description of drawings
Fig. 1 is the structural representation of existing a kind of driven image element circuit;
Fig. 2 is the structural representation of existing another kind of driven image element circuit;
Fig. 3 is the structural representation of existing another kind of driven image element circuit;
Fig. 4 is the structural representation of existing another kind of driven image element circuit;
Fig. 5 is the structural representation of existing another kind of driven image element circuit;
Fig. 6 is the structural representation of a kind of driven image element circuit of the embodiment of the invention;
Fig. 7 is the driving sequential chart of driven image element circuit driving method shown in Figure 6;
Equivalent circuit structure synoptic diagram when Fig. 8 is a driven image element circuit shown in Figure 6 by driving sequential chart work shown in Figure 7;
Fig. 9 is the TFT threshold voltage heterogeneity compensating analog comparative graph as a result of driven image element circuit shown in Figure 6 and driven image element circuit shown in Figure 1;
Figure 10 is the OLED device voltage heterogeneity compensating analog comparative graph as a result of driven image element circuit shown in Figure 6 and driven image element circuit shown in Figure 1.
Embodiment
Below in conjunction with accompanying drawing and embodiment, specific embodiments of the invention describes in further detail.Following examples are used to explain the present invention, but are not used for limiting scope of the present invention.
As shown in Figure 6; Comprise: 4 TFT transistors (n type) and 1 electric capacity and 1 OLED device; Be respectively driving transistors 1, keep transistor 2, switching transistor 3, compensation transistor 4, MM CAP 5 and OLED device 6, the OLED device is light emitting diode of equivalence and capacitor C on electric property OLEDParallel connection.
The grid of switching transistor 3 connects grid line SCAN, and source electrode connects data line VD, and drain electrode connects an end and the source electrode that keeps transistor 2 of MM CAP 5, is used for the writing of voltage signal of control data line.Keep the grid of transistor 2 to connect the first control signal wire EM, drain electrode connects the grid of driving transistors 1, is used to keep the grid voltage of driving transistors 1, and the first control signal wire EM is used to control the break-make that keeps transistor 2.The grid of compensation transistor 4 connects the second control signal wire VC, and source electrode connects the drain electrode of driving transistors 1, and drain electrode connects the grid of driving transistors 1, and the second control signal wire VC is used for the break-make of control compensation transistor 4.The source electrode of driving transistors 1 connects the other end of MM CAP 5 and the anode of OLED device 6, is used for driving OLED device 6.The source electrode of the drain electrode of driving transistors 1 and compensation transistor 4 all is connected the first power lead VP.The negative electrode of OLED device 6 connects second source line VN.
As shown in Figure 7, be the driving sequential chart of above-mentioned driven image element circuit driving method, the equivalent circuit structure synoptic diagram during work, driving method are divided into and are three phases:
Initial phase, its fundamental purpose are to make the source electrode N3 point preliminary filling of driving transistors 1 to low level.
At initial phase; Equivalent electrical circuit is shown in (a) among Fig. 8, and data line VD, second source line VN are high power level (ARVDD); The first power lead VP is low power level (ARVSS), because OLED device 6 can equivalence be a light emitting diode and capacitor C on electric property OLEDParallel connection, so 6 anti-phases of OLED device end.Grid line SCAN, the first control signal wire EM are high switch level (VGH), and the second control signal wire VC is low switch level (VGL).At this moment, keep transistor 2 and switching transistor 3 conductings, compensation transistor 4 turn-offs, and circuit N1 and N2 point transmit high power level ARVDD through keeping transistor 2 and switching transistor 3 to the N1 point, open driving transistors 1 and make the N3 point be discharged to ARVSS.
Compensated stage, equivalent electrical circuit are shown in (b) among Fig. 8, and VD is the data voltage V of present frame (n frame) DATA(n), VP is direct current datum (VREF), VN is high power level (ARVDD), OLED device 6 keeps anti-phases to end.SCAN, VC are high switch level (VGH), and EM is low switch level (VGL).In this stage, because the bootstrap effect of electric capacity 5, when VD becomes V DATA(n) time, the voltage that N3 is ordered becomes negative V DATA(n)-ARVDD+ARVSS; Because VREF＞0, and driving transistors 1 formation diode current flow connection, electric current charges to the N3 point from VREF; Be increased to VREF-Vth until the N3 point voltage; Driving transistors 1 is ended, and when compensated stage finished, the electric charge that is stored in MM CAP 5 two ends was (VREF-Vth-V DATA(n)) C ST, C STCapacitance for MM CAP.
Keep glow phase, equivalent electrical circuit is shown in (c) among Fig. 8, and in this stage, VP is high power level (ARVDD), and VN is low power level (ARVSS), OLED forward conduction.SCAN, VC are low switch level (VGL); EM is high switch level (VGH), and driving transistors 1 turn-offs with compensation transistor 4 with maintenance transistor 2 conductings, switching transistor 3; MM CAP 5 is connected between the grid and source electrode of driving transistors 1, keeps the V of driving transistors 1 GS, its charge stored remains unchanged, and along with the electric current of OLED device 6 tends towards stability, the N3 point voltage becomes V OLED, because the bootstrap effect of MM CAP 5, N1 and N2 point voltage become V OLED+ V DATA(n)-VREF+Vth.The V that keeps driving transistors 1 GSRemain V DATA(n)-and VREF+Vth, the electric current that flow through driving transistors 1 this moment is:
I OLED = 1 2 · μ n · C OX · W L · [ V DATA ( n ) - VREF + Vthn - Vth ] 2
= 1 2 · μ n · C OX · W L · [ V DATA ( n ) - VREF ] 2
μ wherein nBe carrier mobility, C OXBe gate oxide electric capacity, W/L is the transistor breadth length ratio, can be known that by following formula therefore the independent from voltage at its electric current and threshold voltage and OLED two ends has eliminated threshold voltage heterogeneity, drift and the heteropical influence of OLED electric property basically.
Shown in Figure 9 for compensating the heteropical analog result of threshold voltage; 2T1C is the traditional structure of band compensate function; The circuit structure that 4T1C adopts for the present invention, the driving tube breadth length ratio adopts identical W/L=30/10 in two kinds of structures, adopts identical TFT model during analog simulation.When threshold voltage shift ± 0.6V, adopt traditional 2T1C structure OLED electric current maximum drift to reach more than 90%, and the 4T1C structure among the present invention, the OLED current fluctuation is less than 10%.Figure 10 is the traditional structure of band compensation for the analog result of compensation OLED voltage non-uniformity, 2T1C, and as OLED WV drift ± 0.45V, OLED electric current maximum drift possibly reach 60%, and the 4T1C structure among the present invention, the OLED current fluctuation is less than 5%.
This shows; Adopt the circuit of 4T1C structure of the present invention on compensation threshold voltage heterogeneity, drift and OLED heterogeneity, to have clear improvement with respect to the 2T1C structure; The image element circuit of similar other structures of comparing simultaneously; Its area occupied is littler, only needs 4 TFT pipes and 1 electric capacity, more is prone to realize high aperture.
The present invention also provides a kind of display panel, comprises above-mentioned driven image element circuit.This driven image element circuit is formed on the array base palte, and array base palte is provided with many data lines and grid line, and many data lines and grid line define a plurality of driven image element circuits; Array base palte also comprises chip for driving, is used to said grid line, data line, first control signal wire and second control signal wire clock signal is provided, and is that first power lead and second source line provide power supply signal.Because this display panel adopts above-mentioned driven image element circuit, so display effect is good, has avoided ghost phenomena.
Above embodiment only is used to explain the present invention; And be not limitation of the present invention; The those of ordinary skill in relevant technologies field under the situation that does not break away from the spirit and scope of the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.

Claims (7)

1. driven image element circuit comprises: driving transistors, keeps transistor, switching transistor, compensation transistor, MM CAP and OLED device, it is characterized in that,
The grid of said switching transistor connects grid line, and source electrode connects data line, and drain electrode connects an end and the transistorized source electrode of said maintenance of said MM CAP, is used for the writing of voltage signal of control data line;
The transistorized grid of said maintenance connects first control signal wire that is used to control its conducting, and drain electrode connects the grid of said driving transistors, is used to keep the grid voltage of said driving transistors;
The grid of said compensation transistor connects second control signal wire that is used to control its conducting, and source electrode connects the drain electrode of said driving transistors, and drain electrode connects the grid of said driving transistors;
The source electrode of said driving transistors connects the other end of MM CAP and the anode of said OLED device, is used to drive said OLED device;
The drain electrode of said driving transistors all is connected first power lead with the source electrode of compensation transistor;
The negative electrode of said OLED device connects the second source line.
2. the driving method of a driven image element circuit as claimed in claim 1 is characterized in that, may further comprise the steps:
S1: the said driving transistors of conducting, maintenance transistor and switching transistor, oppositely by said OLED device, the source electrode preliminary filling that makes said driving transistors is to low level;
S2: the said compensation transistor of conducting, turn-off said maintenance transistor, go into to be used to compensate the threshold voltage according of said driving transistors for said MM CAP preliminary filling;
S3: turn-off said switching transistor and compensation transistor, and said maintenance transistor of conducting and OLED device, keep the grid voltage of said driving transistors, utilize the said OLED device of driven that is stored in the said MM CAP luminous.
3. the driving method of driven image element circuit as claimed in claim 2 is characterized in that, said step S1 specifically comprises:
Import high power level to said data line and second source line; Import high switch level to said first control signal wire and grid line, the said maintenance transistor of conducting, switching transistor and driving transistors, said second control signal wire input low switch level; Turn-off said compensation transistor; Said first power lead connects low power level, and said OLED device is ended, and the source electrode of said driving transistors is discharged to said low power level.
4. the driving method of driven image element circuit as claimed in claim 2 is characterized in that, said step S2 specifically comprises:
Change the data voltage of said data line voltage to present frame; Said first power lead input direct current datum; Said first control signal wire input low switch level turn-offs said maintenance transistor, and said second control signal wire is imported high switch level; The said compensation transistor of conducting makes said MM CAP preliminary filling go into to be used to compensate the threshold voltage according of said driving transistors.
5. the driving method of driven image element circuit as claimed in claim 2 is characterized in that.Step S3 specifically comprises:
Said grid line and second control signal wire input low switch level; Turn-off said switching transistor and compensation transistor, said first control signal wire is imported high switch level, the said maintenance transistor of conducting; Said first power lead connects high power level; Said second source line connects low power level, and the said OLED device of conducting utilizes the said OLED device of driven that is stored in the said MM CAP luminous.
6. a display panel is characterized in that, comprises the described driven image element circuit of claim 1.
7. display panel as claimed in claim 6; It is characterized in that; Said driven image element circuit is formed on the array base palte, and said array base palte is provided with many data lines and grid line, and said many data lines and grid line define a plurality of described driven image element circuits; Said array base palte also comprises chip for driving, is used to said grid line, data line, first control signal wire and second control signal wire clock signal is provided, for said first power lead and second source line provide power supply signal.
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