CN104715712A - Pixel circuit and driving method and application thereof - Google Patents
Pixel circuit and driving method and application thereof Download PDFInfo
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Abstract
The invention provides a pixel circuit and a driving method thereof. A first capacitor is electrically connected between the positive pole of an organic LED and the grid electrode of a driving transistor. When all pixel circuits respond to the same data signal, the carrier mobilities of the driving transistors of all the pixel circuits are different, so that current flowing through the organic LEDs is not absolutely the same, and the uniformity of the lighting brightness of all pixel units is influenced; and voltage variation is fed back to the grid electrodes of the driving transistors through the first capacitors connected in parallel with the driving transistors, and all the transistors which are field-effect transistors with the same channel polarity can play a role of negative feedback adjustment of current flowing into the positive poles of the organic LEDs, so that current, flowing through the organic LEDs, in all pixels is compensated to be consistent, and accordingly, the problem that the display effect of an organic light-emitting display device applying the organic LEDs is influenced by nonuniformity of the organic LEDs due to difference between the carrier mobilities is effectively solved.
Description
Technical field
The present invention relates to display technique field, be specifically related to a kind ofly can effectively improve display device response characteristic and show image element circuit and the driving method thereof of even pixel qualities, and apply the display device of described image element circuit.
Background technology
Flat-panel monitor has the features such as complete complanation, light, thin, power saving, is inexorable trend and the research focus of image display development.In various types of panel display apparatus, due to active array organic light emitting display device, (English full name is Active Matrix Organic Light EmittingDisplay, be called for short AMOLED) (English full name is OrganicLight Emitting Diode to use self luminous Organic Light Emitting Diode, be called for short OLED) show image, there is the response time short, low-power consumption is used to drive, the relatively better characteristic of brightness and colour purity, so organic light-emitting display device has become the focus of display device of future generation.
For large-scale active array organic light emitting display device, comprise multiple pixel cells of the intersection region being positioned at sweep trace and data line.Each pixel cell includes OLED and for driving the image element circuit of described Organic Light Emitting Diode, image element circuit then comprises switching transistor further, the components and parts such as driving transistors and holding capacitor.
The pixel characteristic of active array organic light emitting display device is subject to the impact of the unfavorable factors such as the leakage current of difference between driving transistors and switching transistor, therefore the quality uniformity of the image of active array organic light emitting display device and consistance are difficult to be guaranteed, particularly along with the continuous increase of active matrix panel display apparatus size, the increase of pixel cell quantity, this problem becomes particularly outstanding.
As shown in Figure 1, traditional active array organic light emitting display device generally includes sweep trace Sn1, data line Dm, power lead ELVDD and ELVSS, and is connected to these lines and the pixel cell arranged in the matrix form.Each pixel cell generally includes an Organic Light Emitting Diode OLED, two thin film transistor (TFT)s and one for keeping the capacitor of data voltage; One of them thin film transistor (TFT) is the switching transistor T2 for data signal, and one is the driving transistors T3 for driving Organic Light Emitting Diode OLED according to data-signal.
Although the matrix/organic light emitting of conventional active described in Fig. 1 display device has the advantage of low-power consumption, but due to the reason in the preparation technology of thin film transistor (TFT), be difficult to make all thin film transistor (TFT)s in active array organic light emitting display device have identical carrier mobility, particularly in different pixels unit, the carrier mobility of driving transistors is different, make when adding identical gate drive voltage, the electric current flowing through Organic Light Emitting Diode is inconsistent, causes the brightness of Organic Light Emitting Diode in different pixels unit inconsistent; Each pixel cell, when responding same data-signal, produces the light with different brightness, has a strong impact on the display effect of active array organic light emitting display device.
Summary of the invention
For this reason, to be solved by this invention is that the carrier mobility of driving transistors in the image element circuit of different pixels unit is not quite similar, very easily affect the technical matters of display effect, a kind of image element circuit that can compensate driving transistors carrier mobility differential in the image element circuit of different pixels unit is provided, and the driving method of described image element circuit and application.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of image element circuit of the present invention, be electrically connected with data driver by data line, be electrically connected with scanner driver by sweep trace, each image element circuit comprises the first power supply, second source further, is connected to driving transistors between the first power supply and second source and Organic Light Emitting Diode in turn, and each image element circuit also comprises:
First capacitor, is connected electrically between the anode of described Organic Light Emitting Diode and the grid of described driving transistors.
Each image element circuit also comprises:
The first transistor, be connected electrically between the 7th transistor and described first capacitor, the grid of described the first transistor is electrically connected to three scan line;
7th transistor, is connected electrically between described the first transistor and the 3rd power supply, and the grid of described 7th transistor is electrically connected to described three scan line;
Described 3rd power supply regulates generation in real time by external drive circuit, and it is equal with the absolute value of the voltage difference between described drive transistor gate that described 3rd power supply and the absolute value of the voltage difference between described drive transistor gate equal described first power supply.
Described first power supply is high level voltage source, and described second source is low level voltage source.
Each image element circuit also comprises:
Transistor seconds, is connected electrically between data line and driving transistors, and the grid of described transistor seconds is electrically connected to the second sweep trace;
4th transistor, is connected electrically between described the first transistor and the 8th transistor, and the grid of described 4th transistor is electrically connected to the second sweep trace;
8th transistor, is connected electrically between described 4th transistor and described driving transistors.
Each image element circuit also comprises:
5th transistor, is connected electrically between the first power supply and described driving transistors, and the grid of described 5th transistor is electrically connected to the first sweep trace;
6th transistor, is connected electrically between described driving transistors and the anode of Organic Light Emitting Diode, and the grid of described 6th transistor is electrically connected to described first sweep trace.
The source electrode of described 4th transistor is electrically connected to the pole plate that the grid of described driving transistors and described first capacitor are electrically connected with described the first transistor.
Also be electrically connected with the second capacitor between described first power supply and described first capacitor, and the pole plate that described second capacitor is connected with described first capacitor electrode is also electrically connected to the grid of described driving transistors.
All described transistors are the field effect transistor that raceway groove polarity is identical.
The driving method of a kind of described image element circuit of the present invention, is divided into initial phase, programming phases and glow phase by the scan period of every row pixel cell, comprises the steps:
S1, at described initial phase, scanner driver output low level sweep signal is to three scan line, and conducting the first transistor and the 7th transistor, make the voltage of the 3rd power supply be supplied to driving transistors as resetting voltage;
S2, in described programming phases, described scanner driver output low level sweep signal to the second sweep trace, conducting transistor seconds, the 4th transistor and the 8th transistor, because described driving transistors is initialised at described initial phase, so driving transistors forward conduction, to the first capacitor charging;
S3, in described glow phase, described scanner driver output low level sweep signal to the first sweep trace, conducting the 5th transistor and the 6th transistor, drive current flows to second source along the first power supply through described 5th transistor, described driving transistors, described 6th transistor and Organic Light Emitting Diode, current line pixel unit luminescence display image.
Described 3rd power supply regulates generation in real time by external drive circuit, and it is equal with the absolute value of the voltage difference between described drive transistor gate that described 3rd power supply and the absolute value of the voltage difference between described drive transistor gate equal described first power supply.
Described first power supply is high level voltage source, and described second source is low level voltage source.
In step S2, also to the second capacitor charging after described driving transistors forward conduction.
A kind of active array organic light emitting display device of the present invention, comprises described image element circuit.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of image element circuit of the present invention and driving method thereof, is electrically connected with the first capacitor between the anode and the grid of described driving transistors of Organic Light Emitting Diode, each image element circuit is when responding same data-signal, if the carrier mobility of the driving transistors of each image element circuit is not identical, cause the electric current flowing through Organic Light Emitting Diode to be not quite similar, now, make the voltage being carried in Organic Light Emitting Diode anode also different, by first capacitor in parallel with driving transistors, change in voltage is fed back to the grid of driving transistors, because all crystals pipe is the field effect transistor that raceway groove polarity is identical, when the gate drive voltage of driving transistors increases, voltage difference between source-drain electrode reduces, the electric current being provided with OLED anode is reduced, when the gate drive voltage of driving transistors reduces, voltage difference between source-drain electrode increases, the electric current being provided with OLED anode is increased, thus by consistent for the current compensation flowing through Organic Light Emitting Diode in each pixel cell, the uneven problem affecting display effect of oled luminance that effective solution causes due to the difference of carrier mobility.
2, a kind of image element circuit of the present invention and driving method thereof, because the drive transistor threshold voltage of different pixels circuit is not quite similar, cause the electric current being provided with OLED inconsistent, the consistance of current each pixel cell luminosity is deteriorated, and picture quality is uneven; Described image element circuit has threshold voltage compensation transistor (the 4th transistor and the 8th transistor), the information of threshold voltage is stored into the first capacitor by threshold voltage compensation transistor, for the threshold voltage variation of compensation for drive transistor, thus improve the light characteristic of current pixel unit, thus display device is made to show the image with balanced picture quality.
3, a kind of image element circuit of the present invention and driving method thereof, due to the leakage current of the 4th transistor and the 8th transistor, the gate drive voltage being carried in drive transistor gate is changed at the voltage of the glow phase of each frame, make the bad stability of pixel cell brightness, thus cause image flicker serious; Described image element circuit has leakage compensated transistor (the first transistor and the 7th transistor), leakage compensated transistor is used for compensating because the leakage current of threshold voltage compensation transistor (the 4th transistor and the 8th transistor) causes the change of the grid voltage of driving transistors in the pixel light emission stage, thus the blinking characteristic of pixel cell can be improved, thus display device is made to show the image with low flicker picture quality.
4, a kind of active array organic light emitting display device of the present invention, in its image element circuit, all crystals pipe is the field effect transistor that raceway groove polarity is identical, between the anode and the grid of described driving transistors of Organic Light Emitting Diode, be electrically connected with the first capacitor; Each image element circuit is when responding same data-signal, change in voltage is fed back to the grid of driving transistors by first capacitor in parallel with driving transistors, thus the current compensation that will flow through Organic Light Emitting Diode in each pixel cell is consistent, effectively solve the uneven problem affecting display effect of Organic Light Emitting Diode that the difference due to carrier mobility causes; Described image element circuit also has threshold voltage compensation transistor (the 4th transistor and the 8th transistor), the information of threshold voltage is stored into the first capacitor by threshold voltage compensation transistor, for the threshold voltage variation of compensation for drive transistor, thus improve the light characteristic of current pixel unit, thus display device is made to show the image with balanced picture quality; Described image element circuit has leakage compensated transistor (the first transistor and the 7th transistor), leakage compensated transistor is used for compensating because the leakage current of threshold voltage compensation transistor causes the change of the grid voltage of driving transistors in the pixel light emission stage, thus the blinking characteristic of pixel cell can be improved, thus display device is made to show the image with low flicker picture quality.In addition, because described image element circuit reduces the leakage current of drive transistor gate, therefore, the capacitance of memory capacitance in image element circuit can be reduced, thus can capacity area be reduced, the space of a whole page area of image element circuit is reduced, the object improving described active array organic light emitting display device resolution can be realized.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the image element circuit figure of conventional active matrix/organic light emitting display device in prior art;
Fig. 2 is image element circuit figure described in the embodiment of the present invention 1;
Fig. 3 is image element circuit figure described in the embodiment of the present invention 2;
Fig. 4 is the oscillogram of the method driving image element circuit in Fig. 2 and Fig. 3;
Fig. 5 is the structural map of active array organic light emitting display device described in the embodiment of the present invention 3.
In figure, Reference numeral is expressed as: T1-the first transistor, T2-transistor seconds, T3-driving transistors, T4-the 4th transistor, T5-the 5th transistor, T6-the 6th transistor, T7-the 7th transistor, T8-the 8th transistor, N1-first node, N2-Section Point, N3-the 3rd node, C1-first capacitor, C2-second capacitor, C
oLEDthe stray capacitance of-Organic Light Emitting Diode, Dm-m column data line, Sn-n-th line sweep trace, Sn1-n-th line first sweep trace, Sn2-n-th line second sweep trace, Sn3-n-th line three scan line, Sn4-n-th line the 4th sweep trace, OLED-Organic Light Emitting Diode, ELVDD-first power supply, ELVSS – second source, ELVL-the 3rd power supply, t1-initial phase, t2-programming phases, t3-glow phase, 110-pixel cell, 120-scanner driver, 130-data driver.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Describe according to certain exemplary embodiments of the present invention referring to accompanying drawing.Here, when being described as ' attach ' to the second element by the first element, the first element can be connected directly to the second element, or is indirectly connected to the second element through one or more add ons.Further, for the sake of clarity, concisely eliminate for fully understanding for the present invention not necessarily some element.In addition, identical Reference numeral refers to identical element all the time.
Embodiment 1
The present embodiment provides a kind of image element circuit and driving method thereof, and as shown in Figure 5, described image element circuit is electrically connected with data driver 130 by data line Dm, be electrically connected with scanner driver 120 by sweep trace Sni (i is 1,2,3); Each pixel cell 110 is initialised at the initial phase t1 of the scan control signal that sweep trace Sni provides, the data model provided from data line Dm being provided at programming phases t2, showing image at glow phase t3 by launching the light with the brightness corresponding to data-signal; At glow phase t3, sweep trace Sni transits to suitable level after providing scan control signal, thus provides electric current to the Organic Light Emitting Diode arranged in each pixel cell 110.
As shown in Figure 2, each image element circuit comprises the first power supply ELVDD and the second source ELVSS of outside access further, first power supply ELVDD and second source ELVSS is used as the driving power of image element circuit, and described image element circuit also comprises and is connected to driving transistors T3 between the first power supply ELVDD and second source ELVSS and Organic Light Emitting Diode OLED in turn.
The external 3 articles of sweep traces of described image element circuit: the first sweep trace Sn1, the second sweep trace Sn2, three scan line Sn3; External 1 the data line Dm of described image element circuit.
Described image element circuit also comprises:
The first capacitor C1 between the grid being connected electrically in described Organic Light Emitting Diode OLED anode and described driving transistors T3; Be connected electrically in the first transistor T1 between the 7th transistor T7 and described first capacitor C1, the grid of described the first transistor T1 is electrically connected to three scan line Sn3; Be connected electrically in the transistor seconds T2 between data line Dm and driving transistors T3, the grid of described transistor seconds T2 is electrically connected to the second sweep trace Sn2; Be connected electrically in the 4th transistor T4 between described the first transistor T1 and the 8th transistor T8, the grid of described 4th transistor T4 is electrically connected to the second sweep trace Sn2; Be connected electrically in the 5th transistor T5 between the first power supply ELVDD and described driving transistors T3, the grid of described 5th transistor T5 is electrically connected to the first sweep trace Sn1; Be connected electrically in the 6th transistor T6 between described driving transistors T3 and the anode of Organic Light Emitting Diode OLED, the grid of described 6th transistor T6 is electrically connected to described first sweep trace Sn1; Be connected electrically in the 7th transistor T7 between described the first transistor T1 and the 3rd power supply ELVL, the grid of described 7th transistor T7 is electrically connected to described three scan line Sn3; Be connected electrically in the 8th transistor T8 between described 4th transistor T4 and described driving transistors T3.
Wherein, first node N1 is electrically connected the source electrode of driving transistors T3, the drain electrode of the 5th transistor T5 and the source electrode of the 8th transistor T8;
Section Point N2 is electrically connected the pole plate that the grid of driving transistors T3, the drain electrode of the 4th transistor T4 and the first capacitor C1 are electrically connected with the first transistor T1;
3rd node N3 is electrically connected the drain electrode of the 6th transistor T6, the anode of Organic Light Emitting Diode OLED and the first capacitor C1 pole plate away from the first transistor T1;
4th node N4 is electrically connected the drain electrode of transistor seconds T2, the drain electrode of driving transistors T3 and the source electrode of the 6th transistor T6.
In Fig. 2, C
oLEDfor the stray capacitance of Organic Light Emitting Diode.
First power supply ELVDD is high level voltage source, and second source ELVSS is low level voltage source; 3rd power supply ELVL regulates generation in real time by external drive circuit, makes the 3rd power supply ELVL and the absolute value of the voltage difference of Section Point N2 equal the first power supply ELVDD equal with the absolute value of the voltage difference between Section Point N2.The absolute value that the absolute value of the voltage difference namely between described 3rd power supply ELVL with described driving transistors T3 grid equals the voltage difference between described first power supply ELVDD with described driving transistors T3 grid is equal.
Fig. 4 illustrates the oscillogram of the method driving image element circuit in Fig. 2, for the ease of illustrating, by the drive singal being supplied to image element circuit in an image duration shown in Figure 4, the scan period of every row pixel cell 110 is divided into initial phase t1, programming (programming) stage t2 and glow phase t3.
At described initial phase t1, scanner driver 120 output low level sweep signal is to three scan line Sn3, and conducting the first transistor T1 and the 7th transistor T7, makes the voltage of the 3rd power supply ELVL be supplied to Section Point N2 as resetting voltage; The first transistor T1 and the 7th transistor T7 provides constant voltage to Section Point N2 in the initialization time of pixel cell 110 during section.
In the present embodiment, resetting voltage is set to the 3rd power supply ELVL, thus Section Point N2 can be reset to the 3rd power supply ELVL consistently in each frame.
At described programming phases t2, scanner driver 120 output low level sweep signal to the second sweep trace Sn2, transistor seconds T2 is connected between data line Dm and the drain electrode of third transistor T3, the grid of transistor seconds T2 is connected to sweep trace Sn2, transistor seconds T2 conducting, thus the data-signal provided from data line Dm is supplied to pixel cell 110.
Third transistor T3 is connected between first node N1 and the 6th transistor T6, and the grid of third transistor T3 is connected to Section Point N2, and third transistor T3 control flow check is to the amplitude of the drive current of Organic Light Emitting Diode OLED.
Between the source electrode that 4th transistor T4 is connected to the 8th transistor T8 and Section Point N2, the grid of the 4th transistor T4 is connected to sweep trace Sn2.At described programming phases t2, the 4th transistor T4 and the common conducting of the 8th transistor T8, thus the source electrode of third transistor T3 is connected with Section Point N2.
The threshold voltage of the driving transistors T3 in each image element circuit is not quite similar, and causes the electric current being provided with OLED OLED inconsistent, and the consistance of current each pixel cell luminosity is deteriorated, and picture quality is uneven; Image element circuit described in the present embodiment comprises and has threshold voltage compensation transistor, 4th transistor T4 and the 8th transistor T8, the information of threshold voltage is stored into the first capacitor C1 by threshold voltage compensation transistor, for the threshold voltage variation of compensation for drive transistor T3, thus improve the light characteristic of current pixel unit, thus display device is made to show the image with balanced picture quality.
5th transistor T5 is connected between the first power supply ELVDD and first node N1, and the grid of the 5th transistor T5 is connected to sweep trace Sn1; 6th transistor T6 is connected between third transistor T3 and Organic Light Emitting Diode OLED, and the grid of the 6th transistor T6 connects sweep trace Sn1.
At described glow phase t3, described scanner driver output low level sweep signal to the first sweep trace Sn1, conducting the 5th transistor T5 and the 6th transistor T6, the source electrode of third transistor T3 is connected to the first power supply ELVDD, driving transistors T3 is connected to Organic Light Emitting Diode OLED, thus driving transistors T3 is supplied to Organic Light Emitting Diode OLED drive current.High level scan control signal is being supplied to the time period of sweep trace Sn1, the 6th transistor T6 ends, thus drive current can be prevented to be provided to Organic Light Emitting Diode OLED.
First capacitor C1 is connected between Section Point N2 and the 3rd node N3.At initial phase t1, the 3rd supply voltage ELVL is provided to carry out initialization first capacitor C1 by the first transistor T1 and the 7th transistor T7; Thereafter, at programming phases t2, will with through transistor seconds T2, third transistor T3, the corresponding store voltages of data-signal that the 8th transistor T8 and the 4th transistor T4 provides is in the first capacitor C1; Finally, at glow phase t3, namely image element circuit 110 enters normal luminous displaying time section, Organic Light Emitting Diode OLED starts to send the light corresponding to data voltage, and the change of Organic Light Emitting Diode OLED anode voltage feeds back to the grid of driving transistors T3 by the first capacitor C1 in parallel with it.Because all crystals pipe is the field effect transistor that raceway groove polarity is identical, as being all P type field effect transistor or being all N-type field effect transistor, when the gate drive voltage of driving transistors T3 increases, voltage difference between source-drain electrode reduces, the electric current being provided with OLED OLED anode is reduced, when the gate drive voltage of driving transistors T3 reduces, voltage difference between source-drain electrode increases, the electric current being provided with OLED OLED anode is increased, thus by consistent for the current compensation flowing through Organic Light Emitting Diode OLED in each pixel cell 110, in each pixel cell that effective solution causes due to the difference of carrier mobility, Organic Light Emitting Diode OLED brightness irregularities affects the problem of display effect.
Because the 4th transistor T4 and the 8th transistor T8 exists leakage current, the gate drive voltage being carried in driving transistors T3 grid is changed at the voltage of the glow phase t3 of each frame, make the bad stability of pixel cell brightness, thus cause image flicker serious.But, image element circuit described in the present embodiment has leakage compensated transistor, i.e. the first transistor T1 and the 7th transistor T7, leakage compensated transistor is used for compensating because the leakage current of threshold voltage compensation transistor (the 4th transistor T4 and the 8th transistor T8) causes the change of the grid voltage of driving transistors T3 at pixel light emission stage t3, thus the blinking characteristic of pixel cell can be improved, thus display device is made to show the image with low flicker picture quality.
Embodiment 2
The present embodiment provides a kind of image element circuit and driving method thereof, as shown in Figure 3, described image element circuit and driving method thereof with embodiment 1, uniquely unlike, be electrically connected with the second capacitor C2 between the 5th transistor T5 source electrode and the drain electrode of the first transistor T1.
The pole plate that second capacitor C2 is electrically connected with the first transistor T1 is electrically connected to Section Point N2, first capacitor C1 and the second capacitor C2 can play the anode voltage negative feedback of Organic Light Emitting Diode OLED simultaneously, therefore, the voltage of described Organic Light Emitting Diode OLED anode feedback is multiplied by C1/ (C1+C2) factor, the voltage of described Organic Light Emitting Diode OLED anode feedback so just can be controlled by the capacitance setting the second capacitor C2, the electric current flowing into described Organic Light Emitting Diode OLED can be controlled more flexibly, thus by consistent for the current compensation flowing through Organic Light Emitting Diode OLED in each pixel cell 110, in each pixel cell that effective solution causes due to the difference of carrier mobility, Organic Light Emitting Diode OLED brightness irregularities affects the problem of display effect.
Embodiment 3
The present embodiment provides the active array organic light emitting display device of image element circuit described in a kind of Application Example 1, as shown in Figure 5, described in the present embodiment, active array organic light emitting display device comprises: some pixel cells 110, scanner driver 120 and data driver 130.Described pixel cell 110 is arranged in the intersection region of sweep trace Sni and data line Dm in the matrix form, and is electrically connected with data driver 130 by data line Dm, is electrically connected with scanner driver 120 by sweep trace Sni.
Each pixel cell 110 provides the initial phase t1 of scan control signal to be initialised at sweep trace Sni, and programming (programming) the stage t2 of scan control signal that pixel cell 110 provides at sweep trace Sni accepts the data-signal that provides from data line Dm; At glow phase t3, suitable level is transitted to after the scan control signal that sweep trace Sn provides, thus provide electric current to the Organic Light Emitting Diode OLED arranged in each pixel cell 110, pixel cell 110 is launched and has with the light of data-signal corresponding bright to show image.
Meanwhile, pixel cell 110 receives the first power supply ELVDD, second source ELVSS and the 3rd power supply ELVL, and the first power supply ELVDD and second source ELVSS is used separately as high level voltage source and low level voltage source; First power supply ELVDD and second source ELVSS is used as the driving power of pixel cell 110.
Scanner driver 120 produces to be provided (such as with outside, there is provided from timing control unit) the corresponding scan control signal of scan control signal, the scan control signal produced by scanning monitor 120 is sequentially supplied to pixel cell 110 respectively by n-th line sweep trace Sn1 to Sn3.
Data driver 130 produces provides the data of (such as, providing from timing control unit) and the corresponding data-signal of data controlling signal with outside.The data-signal produced by data driver 130 is synchronously supplied to pixel cell 110 by data line D1 to Dm with sweep signal.
A kind of active array organic light emitting display device described in the present embodiment, in its image element circuit, all crystals pipe is the field effect transistor that raceway groove polarity is identical, between the anode and the grid of described driving transistors T3 of Organic Light Emitting Diode OLED, be electrically connected with the first capacitor C1; Each image element circuit is when responding same data-signal, change in voltage is fed back to the grid of driving transistors T3 by the first capacitor C1 in parallel with driving transistors T3, thus the current compensation that will flow through Organic Light Emitting Diode OLED in each pixel cell is consistent, effectively solve the uneven problem affecting display effect of Organic Light Emitting Diode OLED that the difference due to carrier mobility causes; Described image element circuit also has threshold voltage compensation transistor (the 4th transistor T4 and the 8th transistor T8), the information of threshold voltage is stored into the first capacitor C1 by threshold voltage compensation transistor, for the threshold voltage variation of compensation for drive transistor T3, thus improve the light characteristic of current pixel unit, thus display device is made to show the image with balanced picture quality; Described image element circuit has leakage compensated transistor (the first transistor T1 and the 7th transistor T7), leakage compensated transistor is used for compensating because the leakage current of threshold voltage compensation transistor causes the change of the grid voltage of driving transistors T3 at pixel light emission stage t3, thus the blinking characteristic of pixel cell can be improved, thus display device is made to show the image with low flicker picture quality.In addition, because described image element circuit reduces the leakage current of driving transistors T3 grid, therefore, the capacitance of memory capacitance in image element circuit can be reduced, thus can capacity area be reduced, the space of a whole page area of image element circuit is reduced, the object improving described active array organic light emitting display device resolution can be realized.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (13)
1. an image element circuit, be electrically connected with data driver (130) by data line (Dm), be electrically connected with scanner driver (120) by sweep trace (Sni), each image element circuit comprises the first power supply (ELVDD), second source (ELVSS) further, is connected to driving transistors (T3) between the first power supply (ELVDD) and second source (ELVSS) and Organic Light Emitting Diode (OLED) in turn, it is characterized in that, each image element circuit also comprises:
First capacitor (C1), is connected electrically between the anode of described Organic Light Emitting Diode (OLED) and the grid of described driving transistors (T3).
2. image element circuit according to claim 1, is characterized in that, each image element circuit also comprises:
The first transistor (T1), be connected electrically between the 7th transistor (T7) and described first capacitor (C1), the grid of described the first transistor (T1) is electrically connected to three scan line (Sn3);
7th transistor (T7), is connected electrically between described the first transistor (T1) and the 3rd power supply (ELVL), and the grid of described 7th transistor (T7) is electrically connected to described three scan line (Sn3);
Described 3rd power supply (ELVL) regulates generation in real time by external drive circuit, and it is equal with the absolute value of the voltage difference between described driving transistors (T3) grid that described 3rd power supply (ELVL) and the absolute value of the voltage difference between described driving transistors (T3) grid equal described first power supply (ELVDD).
3. image element circuit according to claim 2, is characterized in that, described first power supply (ELVDD) is high level voltage source, and described second source (ELVSS) is low level voltage source.
4. image element circuit according to claim 3, is characterized in that, each image element circuit also comprises:
Transistor seconds (T2), is connected electrically between data line (Dm) and driving transistors (T3), and the grid of described transistor seconds (T2) is electrically connected to the second sweep trace (Sn2);
4th transistor (T4), is connected electrically between described the first transistor (T1) and the 8th transistor (T8), and the grid of described 4th transistor (T4) is electrically connected to the second sweep trace (Sn2);
8th transistor (T8), is connected electrically between described 4th transistor (T4) and described driving transistors (T3).
5. image element circuit according to claim 4, is characterized in that, each image element circuit also comprises:
5th transistor (T5), is connected electrically between the first power supply (ELVDD) and described driving transistors (T3), and the grid of described 5th transistor (T5) is electrically connected to the first sweep trace (Sn1);
6th transistor (T6), between the anode being connected electrically in described driving transistors (T3) and Organic Light Emitting Diode (OLED), the grid of described 6th transistor (T6) is electrically connected to described first sweep trace (Sn1).
6. image element circuit according to claim 5, it is characterized in that, the source electrode of described 4th transistor (T4) is electrically connected to the pole plate that the grid of described driving transistors (T3) and described first capacitor (C1) are electrically connected with described the first transistor (T1).
7. image element circuit according to claim 5, it is characterized in that, also be electrically connected with the second capacitor (C2) between described first power supply (ELVDD) and described first capacitor (C1), and the pole plate that described second capacitor (C2) is electrically connected with described first capacitor (C1) is also electrically connected to the grid of described driving transistors (T3).
8., according to the arbitrary described image element circuit of claim 1-7, it is characterized in that, all described transistors are the field effect transistor that raceway groove polarity is identical.
9. the driving method of the arbitrary described image element circuit of claim 1-8, it is characterized in that, is divided into initial phase (t1), programming (programming) stage (t2) and glow phase (t3) scan period of every row pixel cell, comprises the steps:
S1, at described initial phase (t1), scanner driver output low level sweep signal is to three scan line (Sn3), conducting the first transistor (T1) and the 7th transistor (T7), make the voltage of the 3rd power supply (ELVL) be supplied to driving transistors (T3) as resetting voltage;
S2, at described programming phases (t2), described scanner driver output low level sweep signal to the second sweep trace (Sn2), conducting transistor seconds (T2), the 4th transistor (T4) and the 8th transistor (T8), because described driving transistors (T3) is initialised at described initial phase (t1), so driving transistors (T3) forward conduction, the first capacitor (C1) is charged;
S3, at described glow phase (t3), described scanner driver output low level sweep signal to the first sweep trace (Sn1), conducting the 5th transistor (T5) and the 6th transistor (T6), drive current flows to second source (ELVSS), current line pixel unit luminescence display image along the first power supply (ELVDD) through described 5th transistor (T5), described driving transistors (T3), described 6th transistor (T6) and Organic Light Emitting Diode (OLED).
10. the driving method of image element circuit according to claim 9, it is characterized in that, described 3rd power supply (ELVL) regulates generation in real time by external drive circuit, and it is equal with the absolute value of the voltage difference between described driving transistors (T3) grid that described 3rd power supply (ELVL) and the absolute value of the voltage difference between described driving transistors (T3) grid equal described first power supply (ELVDD).
The driving method of 11. image element circuits according to claim 9 or 10, it is characterized in that, described first power supply (ELVDD) is high level voltage source, and described second source (ELVSS) is low level voltage source.
The driving method of 12. image element circuits according to claim 9, is characterized in that, in step S2, also charges to the second capacitor (C2) after described driving transistors (T3) forward conduction.
13. 1 kinds of active array organic light emitting display devices, is characterized in that, comprise the arbitrary described image element circuit of claim 1-8.
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