CN104575367A - Pixel circuit as well as driving method and application thereof - Google Patents
Pixel circuit as well as driving method and application thereof Download PDFInfo
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Abstract
The invention discloses a pixel circuit as well as a driving method thereof. The pixel circuit comprises threshold voltage compensating transistors (a fourth transistor and an eighth transistor) as well as leakage current compensating transistors (the fourth transistor, a first transistor and a seventh transistor), wherein the threshold voltage compensating transistors store threshold voltage information in a first capacitor, so that the brightness characteristic of a pixel unit is improved, and an AMOLED (active matrix organic light emitting display) using the pixel unit displays images with balanced image quality; the leakage current compensating transistors are used for compensating changes of the grid voltage of a driving transistor (a third transistor) caused by leakage currents of the threshold voltage compensating transistors (the fourth transistor and the eighth transistor) at the pixel light emitting phase, so that the flickering characteristic of the pixel unit can be improved, and the AMOLED using the pixel unit displays images with low flickering image quality.
Description
Technical field
The present invention relates to display technique field, be specifically related to a kind ofly can effectively improve display device response characteristic and show image element circuit and the driving method thereof of even pixel qualities, and apply the display device of described image element circuit.
Background technology
Flat-panel monitor has the features such as complete complanation, light, thin, power saving, is inexorable trend and the research focus of image display development.In various types of panel display apparatus, due to active array organic light emitting display device, (English full name is Active Matrix Organic Light EmittingDisplay, be called for short AMOLED) (English full name is OrganicLight Emitting Diode to use self luminous Organic Light Emitting Diode, be called for short OLED) show image, there is the response time short, low-power consumption is used to drive, the relatively better characteristic of brightness and colour purity, so organic light-emitting display device has become the focus of display device of future generation.
For large-scale active array organic light emitting display device, comprise multiple pixel cells of the intersection region being positioned at sweep trace and data line.Each pixel cell includes OLED and for driving the image element circuit of described Organic Light Emitting Diode, image element circuit then comprises switching transistor further, the components and parts such as driving transistors and holding capacitor.
The pixel characteristic of active array organic light emitting display device is subject to the impact of the unfavorable factors such as the leakage current of difference between driving transistors and switching transistor, therefore the quality uniformity of the image of active array organic light emitting display device and consistance are difficult to be guaranteed, particularly along with the continuous increase of active matrix panel display apparatus size, the increase of pixel cell quantity, this problem becomes particularly outstanding.
As shown in Figure 1, traditional active array organic light emitting display device generally includes sweep trace Sn1, data line Dm, power lead ELVDD and ELVSS, and is connected to these lines and the pixel cell arranged in the matrix form.Each pixel cell generally includes an Organic Light Emitting Diode OLED, two thin film transistor (TFT)s and one for keeping the capacitor of data voltage; One of them thin film transistor (TFT) is the switching transistor T1 for data signal, and one is the driving transistors T2 for driving Organic Light Emitting Diode OLED according to data-signal.
Although the matrix/organic light emitting of conventional active described in Fig. 1 display device has the advantage of low-power consumption, but due to the reason in the preparation technology of thin film transistor (TFT), be difficult to make all thin film transistor (TFT)s in active array organic light emitting display device have identical threshold voltage, namely the voltage between driving transistors T2 grid and source electrode, this just makes to there is threshold voltage deviation between different pixels unit, thus causes the strength of current flowing through Organic Light Emitting Diode OLED change in time and make the generation of display brightness non-uniform phenomenon.In addition, in switching transistor T1, leakage current is larger, the grid voltage of driving transistors T2 is caused to change, thus cause the electric current flowing through Organic Light Emitting Diode OLED to change, cause Organic Light Emitting Diode OLED light-emitting flash, cause the deterioration of active array organic light emitting display device image quality.
Summary of the invention
For this reason, to be solved by this invention is that in existing image element circuit, driving transistors exists threshold voltage deviation and the larger technical matters of switch transistors tube leakage current, there is provided a kind of can compensation for drive transistor threshold voltage difference and reduce the image element circuit of switch transistors tube leakage current, and the driving method of described image element circuit and application.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of image element circuit of the present invention, is electrically connected with data driver by data line, is electrically connected with scanner driver by sweep trace, and each image element circuit includes OLED further, and each image element circuit also comprises:
The first transistor, be connected electrically between the 7th transistor and the 8th transistor, the grid of described the first transistor is electrically connected to three scan line;
Transistor seconds, is connected electrically between data line and third transistor, and the grid of described transistor seconds is electrically connected to the second sweep trace;
Third transistor, be connected electrically between the 5th transistor and the 6th transistor, the grid of described third transistor is electrically connected to the first capacitor;
4th transistor, be connected electrically between described 8th transistor and described first capacitor, the grid of described 4th transistor is electrically connected to the second sweep trace;
5th transistor, is connected electrically between the first power supply and described third transistor, and the grid of described 5th transistor is electrically connected to the first sweep trace;
6th transistor, is connected electrically between described third transistor and Organic Light Emitting Diode, and the grid of described 6th transistor is electrically connected to described first sweep trace;
7th transistor, is connected electrically between described the first transistor and the 3rd power supply, and the grid of described 7th transistor is electrically connected to described three scan line;
8th transistor, is connected electrically between described the first transistor and described 5th transistor, and the grid of described 8th transistor is electrically connected to described 4th sweep trace;
First capacitor, is electrically connected to described first power supply;
Described Organic Light Emitting Diode is electrically connected to second source.
Described first power supply is high level voltage source, and described second source is low level voltage source.
Each transistor is polycrystalline SiTFT or metal oxide semiconductor films transistor.
Section Point is connected with the grid of described third transistor, the source electrode of described 4th transistor and described first capacitor electrode respectively, and the absolute value of the voltage difference of described 3rd power supply and described Section Point equals the absolute value of the voltage difference of described Section Point and described first power supply.
The present invention a kind of driving method of described image element circuit, the scan period of every row pixel is divided into first time period (t1), the second time period (t2) and the 3rd time period (t3), comprises the steps:
S1, during described first time period, scanner driver output low level sweep signal to the second sweep trace and three scan line, conducting the 4th transistor, the first transistor and the 7th transistor, make the voltage of the 3rd power supply be supplied to third transistor as resetting voltage;
S2, during described second time period, described scanner driver output low level sweep signal to the second sweep trace and the 4th sweep trace, conducting transistor seconds, the 4th transistor and the 8th transistor, because described third transistor is initialised during described first time period, so third transistor forward conduction, to the first capacitor charging;
S3, during described 3rd time period, described scanner driver output low level sweep signal to the first sweep trace, conducting the 5th transistor and the 6th transistor, drive current flows to second source, current line pixel luminescence display image along the first power supply through described 5th transistor, described third transistor, described 6th transistor and Organic Light Emitting Diode.
Described first power supply is high level voltage source, and described second source is low level voltage source.
Each transistor is polycrystalline SiTFT or metal oxide semiconductor films transistor.
Section Point is connected with the grid of described third transistor, the source electrode of described 4th transistor and described first capacitor electrode respectively, and the absolute value of the voltage difference of described 3rd power supply and described Section Point equals the absolute value of the voltage difference of described Section Point and described first power supply.
A kind of active array organic light emitting display device of the present invention, comprises described image element circuit.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of image element circuit of the present invention and driving method thereof, described image element circuit has threshold voltage compensation transistor (the 4th transistor and the 8th transistor), the information of threshold voltage is stored into the first capacitor by threshold voltage compensation transistor, thus improve the light characteristic of pixel cell, thus display device is made to show the image with balanced picture quality; And, described image element circuit has leakage compensated transistor (the 4th transistor, the first transistor and the 7th transistor), leakage compensated transistor is used for compensating because the leakage current of threshold voltage compensation transistor (the 4th transistor and the 8th transistor) causes the change of the grid voltage of driving transistors (third transistor) in the pixel light emission stage, thus the blinking characteristic of pixel cell can be improved, thus display device is made to show the image with low flicker picture quality.
2, a kind of active array organic light emitting display device of the present invention, image element circuit in its pixel cell has threshold voltage compensation transistor (the 4th transistor and the 8th transistor), the information of threshold voltage is stored into the first capacitor by threshold voltage compensation transistor, thus improve the light characteristic of pixel cell, thus active array organic light emitting display device is made to show the image with balanced picture quality; And, each image element circuit all has leakage compensated transistor (the 4th transistor, the first transistor and the 7th transistor), leakage compensated transistor is used for compensating because the leakage current of threshold voltage compensation transistor (the 4th transistor and the 8th transistor) causes the change of the grid voltage of driving transistors (third transistor) in the pixel light emission stage, thus the blinking characteristic of pixel cell can be improved, thus described active array organic light emitting display device is made to show the image with low flicker picture quality; In addition, because described image element circuit reduces the leakage current of driving transistors (third transistor) grid, therefore, the capacitance of memory capacitance in image element circuit can be reduced, thus can capacity area be reduced, the space of a whole page area of image element circuit is reduced, the object improving described active array organic light emitting display device resolution can be realized.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the image element circuit figure of conventional active matrix/organic light emitting display device in prior art;
Fig. 2 is image element circuit figure of the present invention;
Fig. 3 is the oscillogram of the method driving image element circuit in Fig. 2;
Fig. 4 is the structural map of active array organic light emitting display device of the present invention;
In figure, Reference numeral is expressed as: T1-the first transistor, T2-transistor seconds, T3-third transistor, T4-the 4th transistor, T5-the 5th transistor, T6-the 6th transistor, T7-the 7th transistor, T8-the 8th transistor, N1-first node, N2-Section Point, N3-the 3rd node, C1-first capacitor, Dm-m column data line, Sn-n-th line sweep trace, Sn1-n-th line first sweep trace, Sn2-n-th line second sweep trace, Sn3-n-th line three scan line, Sn4-n-th line the 4th sweep trace, OLED-Organic Light Emitting Diode, ELVDD-first power supply, ELVSS – second source, ELVL-the 3rd power supply, first time period in the t1-scan period, the second time period in the t2-scan period, the 3rd time period in the t3-scan period, 110-pixel cell, 120-scanner driver, 130-data driver.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Describe according to certain exemplary embodiments of the present invention referring to accompanying drawing.Here, when being described as ' attach ' to the second element by the first element, the first element can be connected directly to the second element, or is indirectly connected to the second element through one or more add ons.Further, for the sake of clarity, concisely eliminate for fully understanding for the present invention not necessarily some element.In addition, identical Reference numeral refers to identical element all the time.
Embodiment 1
The present embodiment provides a kind of image element circuit and driving method thereof, and as shown in Figure 4, described image element circuit is electrically connected with data driver 130 by data line Dm, be electrically connected with scanner driver 120 by sweep trace Sni (i is 1,2,3,4); As shown in Figure 2, each image element circuit includes OLED OLED further.
The external 4 articles of sweep traces of described image element circuit: the first sweep trace Sn1, the second sweep trace Sn2, three scan line Sn3, the 4th sweep trace Sn4; External 1 the data line Dm of described image element circuit.
Described image element circuit also comprises:
The first transistor T1 between the source electrode being connected electrically in the 3rd node N3 and the 7th transistor T7 transistor, the grid of described the first transistor T1 is electrically connected to described three scan line Sn3; Be connected electrically in the transistor seconds T2 between data line Dm and the drain electrode of third transistor T3, the grid of described transistor seconds T2 is electrically connected to described second sweep trace Sn2; During the time period that scan control signal is supplied to described three scan line Sn3, described the first transistor T1 and described 7th transistor T7 conducting, thus the voltage of external power supply the 3rd power supply ELVL is supplied to the 3rd node N3; Be supplied to the time period of the second sweep trace Sn2 at scan control signal during, described 3rd supply voltage ELVL by described 3rd node N3, is supplied to described Section Point N2 by described 4th transistor T4.That is, described the first transistor T1 and described 7th transistor T7 during section, by described 4th transistor T4, provides constant described 3rd power supply ELVL to described Section Point N2 in the initialization time of described image element circuit respective pixel unit 110.
Scan control signal is being supplied to the time period of described second sweep trace Sn2, described transistor seconds T2 conducting, thus the data-signal provided from data line Dm is being supplied to described image element circuit respective pixel unit 110.The grid of the 8th transistor T8 is connected to scan control line Sn4.Scan control signal is being supplied to the time period of scan control line Sn4, the 8th transistor T8, third transistor T3 and transistor seconds T2 conducting, thus the data-signal provided from data line Dm is being supplied to Section Point N2.
Third transistor T3 is connected between first node N1 and the 6th transistor T6, and the grid of third transistor T3 is connected to Section Point N2; Third transistor T3 controls from the amplitude that the fluorescent lifetime section of pixel cell 110 during flow to the drive current of Organic Light Emitting Diode OLED corresponding to the data-signal that transistor seconds T2 provides.
4th transistor T4 is connected between the 3rd node N3 and Section Point N2, and the grid of the 4th transistor T4 is connected to the second sweep trace Sn2.During time period scan control signal being supplied to the second sweep trace Sn2 and the 4th sweep trace Sn4, described 4th transistor T4 and the common conducting of the 8th transistor T8, thus the grid of described third transistor T3 is connected with described Section Point N2.
5th transistor T5 is connected between described first power supply ELVDD and described first node N1, and the grid of the 5th transistor T5 is connected to the first sweep trace Sn1; When the scan control signal provided from scan control line transits to low level, described 5th transistor T5 conducting, then the source electrode of described third transistor T3 is connected to external power supply first power supply ELVDD.
6th transistor T6 is connected between described third transistor T3 and described Organic Light Emitting Diode OLED; The grid of described 6th transistor T6 connects the first sweep trace Sn1, high level scan control signal is being supplied to the time period of the first sweep trace Sn1, described 6th transistor T6 ends, thus drive current can be prevented to be provided to described Organic Light Emitting Diode OLED; During scan control signal transits to low level fluorescent lifetime section, described 6th transistor T6 conducting, thus described third transistor has been connected to described OLED OLED, described third transistor T3 is supplied to Organic Light Emitting Diode drive current.
7th transistor T7 provides constant voltage by described the first transistor T1 to described 3rd node N3 in the initialization time of described pixel cell 110 during section; Described 7th transistor T7 is connected between described the first transistor T1 and the 3rd power supply ELVL, the grid of described 7th transistor T7 is connected to three scan line Sn3, when the scan control signal provided from three scan line Sn3 transits to low level, described 7th transistor T7 conducting, described the first transistor T1 is connected to the 3rd power supply ELVL, resetting voltage is set to described 3rd power supply ELVL.
8th transistor T8 is connected between described 3rd node N3 and described first node N1, and the grid of described 8th transistor T8 is connected to the 4th sweep trace Sn4; During time period scan control signal being supplied to the second sweep trace Sn2 and the 4th sweep trace Sn4, described 4th transistor T4 and the common conducting of described 8th transistor T8, thus the grid of described third transistor T3 is connected with described Section Point N2.
First capacitor C1 is connected between Section Point N2 and the first power supply ELVDD, during the time period that scan control signal is supplied to three scan line Sn3 and the second sweep trace Sn2, described 3rd supply voltage ELVL is provided to carry out the first capacitor C1 described in initialization by described 4th transistor T4, described the first transistor T1 and described 7th transistor T7.Thereafter, during time period scan control signal being supplied to described second sweep trace Sn2 and described 4th sweep trace Sn4, will with through described transistor seconds T2, the corresponding store voltages of data-signal that described third transistor T3, described 8th transistor T8 and described 4th transistor T4 provide is in described first capacitor C1.
Organic Light Emitting Diode OLED is connected between described 6th transistor and external power supply second source ELVSS, during the fluorescent lifetime section of described pixel cell 110, described Organic Light Emitting Diode OLED will launch the light corresponding to the drive current provided through described first power supply ELVDD, described 5th transistor T5, described third transistor T3 and described 6th transistor T6.
In different described image element circuits, due to threshold voltage inconsistent of described third transistor T3, cause the electric current flowing through different Organic Light Emitting Diode OLED inconsistent, the consistance of corresponding different pixels unit 110 brightness can be deteriorated, and the quality of image can be uneven.In order to solve this problem, the present invention is provided with the 4th transistor T4 and the 8th transistor T8 in described image element circuit, for the change of the threshold voltage of compensation for drive transistor (i.e. third transistor T3) during section of the initialization time at each frame.
In described image element circuit, because described 4th transistor T4 and described 8th transistor T8 can produce leakage current, the voltage of described Section Point N2 voltage during the fluorescent lifetime section of each frame is changed, that is: the electric current of described first power supply ELVDD is through described 4th transistor T4 and described 8th transistor T8, flow into described Section Point N2, the voltage that described first capacitor C1 is stored raises, thus causes the electric current flowing through described Organic Light Emitting Diode OLED to change.The stability of described pixel cell 110 brightness can be deteriorated, and image flicker is serious.In order to solve this problem, the present invention is provided with and the described the first transistor T1 of described 4th transistor T4 and described 8th transistor T8 symmetry and described 7th transistor T7, and described 3rd power supply ELVL, for compensating the leakage current of described 4th transistor T4 and described 8th transistor T8 during the fluorescent lifetime section of each frame.
Described 4th transistor T4, described 8th transistor T8 and described the first transistor T1, described 7th transistor T7 are symmetrical; The rising of the described first capacitor storage voltage that the leakage current that described 4th transistor T4, described the first transistor T1 and described 7th transistor T7 can reduce to flow into through described first power supply ELVDD, described 4th transistor T4 and described 8th transistor T8 causes.The voltage of described 3rd power supply ELVL is lower than the voltage of described Section Point N2, and voltage difference is VD1; The voltage of described first power supply ELVDD is higher than the voltage of described Section Point N2, and voltage difference is VD2; VD1 equals VD2, thus makes the leakage current flowing into described Section Point N2 by described first power supply ELVDD, described 4th transistor T4 and described 8th transistor T8 equal to be flowed out by described 3rd power supply ELVL, described 4th transistor T4, described the first transistor T1 and described 7th transistor T7 the leakage current of described Section Point N2.Thus improve the characteristic of the flicker of pixel cell corresponding to described image element circuit 110, and display has the image of balanced picture quality.
Described in the present embodiment, the first power supply ELVDD is high level voltage source, and described second source ELVSS is low level voltage source.
Above-mentioned each transistor is polycrystalline SiTFT or metal oxide semiconductor films transistor, the preferred polycrystalline SiTFT of the present embodiment.
Fig. 3 is the oscillogram that the method driving image element circuit in Fig. 2 is shown.For the ease of illustrating, by the drive singal being supplied to image element circuit in an image duration shown in Figure 3.
The scan period of image element circuit is divided into first time period t1, the second time period t 2, the 3rd time period t 3.
During the first time period t1 being set to initialization time section, first by scanner driver output low level sweep signal to the second sweep trace Sn2 and three scan line Sn3, conducting the 4th transistor T4, the first transistor T1 and the 7th transistor T7, make the voltage of the 3rd power supply ELVL be supplied to Section Point N2 as resetting voltage; Here, be designed to by the 3rd power supply ELVL lower than the desired value of Section Point N2 during every frame fluorescent lifetime section, namely the absolute value of the voltage difference of the 3rd power supply ELVL and Section Point N2 approximates the absolute value of the voltage difference of Section Point N2 and the first power supply ELVDD.
Thereafter, during the second time period t 2 being set to programming (programming) time period, by described scanner driver output low level sweep signal to the second sweep trace Sn2 and the 4th sweep trace Sn4, conducting transistor seconds T2, the 4th transistor T4 and the 8th transistor T8, because described Section Point N2 is initialised during described first time period t1, so third transistor T3 forward conduction, the first capacitor C1 is charged;
Thereafter, during being set to the 3rd time period t 3 of fluorescent lifetime section, described scanner driver output low level sweep signal to the first sweep trace Sn1, conducting the 5th transistor T5 and the 6th transistor T6, drive current flows to second source ELVSS, current line pixel luminescence display image along the first power supply ELVDD through described 5th transistor T5, described third transistor T3, described 6th transistor T6 and Organic Light Emitting Diode OLED.
Here, third transistor T3 in response to the corresponding store voltages of the threshold voltage being supplied to third transistor T3 in the first capacitor C1, so the threshold voltage for third transistor T3 during the 3rd time period t 3 compensates, thus improve the light characteristic of pixel cell 110, thus display device is made to show the image with balanced picture quality.
Embodiment 2
The present embodiment provides the active array organic light emitting display device of image element circuit described in a kind of Application Example 1, as shown in Figure 4, described in the present embodiment, active array organic light emitting display device comprises: some pixel cells 110, scanner driver 120 and data driver 130.Described pixel cell 110 is arranged in the intersection region of sweep trace Sn and data line Dm in the matrix form, and is electrically connected with data driver 130 by data line Dm, is electrically connected with scanner driver 120 by sweep trace Sn.
Be initialised during each pixel cell 110 provides the first time period of scan control signal at sweep trace Sn, and the second time period of scan control signal that pixel cell 110 provides at sweep trace Sn accepts the data-signal that provides from data line Dm; During described 3rd time period, suitable level is transitted to after the scan control signal that sweep trace Sn provides, thus provide electric current to the Organic Light Emitting Diode OLED arranged in each pixel cell 110, pixel cell 110 is launched and has with the light of data-signal corresponding bright to show image.
Meanwhile, pixel cell 110 receive provide from outside from the first power supply ELVDD, second source ELVSS and the 3rd power supply ELVL, the first power supply ELVDD and second source ELVSS is used separately as high level voltage source and low level voltage source; First power supply ELVDD and second source ELVSS is used as the driving power of pixel cell 110, the change of voltage of the 3rd power supply ELVL for compensating third transistor grid and causing due to leakage current.
Scanner driver 120 produces to be provided (such as with outside, there is provided from timing control unit) the corresponding scan control signal of scan control signal, the scan control signal produced by scanning monitor 120 is sequentially supplied to pixel cell 110 respectively by n-th line sweep trace Sn1 to Sn4.
Data driver 130 produces provides the data of (such as, providing from timing control unit) and the corresponding data-signal of data controlling signal with outside.The data-signal produced by data driver 130 is synchronously supplied to pixel cell 110 by data line D1 to Dm with sweep signal.
A kind of active array organic light emitting display device described in the present embodiment, the image element circuit of its each pixel cell 110 all has threshold voltage compensation transistor (the 4th transistor and the 8th transistor), the information of threshold voltage is stored into the first capacitor by threshold voltage compensation transistor, thus improve the light characteristic of pixel, thus active array organic light emitting display device is made to show the image with balanced picture quality; And, each image element circuit all has leakage compensated transistor (the 4th transistor, the first transistor and the 7th transistor), leakage compensated transistor is used for compensating because the leakage current of threshold voltage compensation transistor (the 4th transistor and the 8th transistor) causes the change of the grid voltage of driving transistors (third transistor) in the pixel light emission stage, thus the blinking characteristic of pixel can be improved, thus described active array organic light emitting display device is made to show the image with low flicker picture quality; In addition, because described image element circuit reduces the leakage current of driving transistors (third transistor) grid, therefore, the capacitance of memory capacitance in image element circuit can be reduced, thus can capacity area be reduced, the space of a whole page area of image element circuit is reduced, the object improving described active array organic light emitting display device resolution can be realized.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (9)
1. an image element circuit, be electrically connected with data driver (130) by data line (Dm), be electrically connected with scanner driver (120) by sweep trace (Sni), each image element circuit includes OLED (OLED) further, it is characterized in that, each image element circuit also comprises:
The first transistor (T1), be connected electrically between the 7th transistor (T7) and the 8th transistor (T8), the grid of described the first transistor (T1) is electrically connected to three scan line (Sn3);
Transistor seconds (T2), is connected electrically between data line (Dm) and third transistor (T3), and the grid of described transistor seconds (T2) is electrically connected to the second sweep trace (Sn2);
Third transistor (T3), be connected electrically between the 5th transistor (T5) and the 6th transistor (T6), the grid of described third transistor (T3) is electrically connected to the first capacitor (C1);
4th transistor (T4), be connected electrically between described 8th transistor (T8) and described first capacitor (C1), the grid of described 4th transistor (T4) is electrically connected to the second sweep trace (Sn2);
5th transistor (T5), is connected electrically between the first power supply (ELVDD) and described third transistor (T3), and the grid of described 5th transistor (T5) is electrically connected to the first sweep trace (Sn1);
6th transistor (T6), is connected electrically between described third transistor (T3) and Organic Light Emitting Diode (OLED), and the grid of described 6th transistor (T6) is electrically connected to described first sweep trace (Sn1);
7th transistor (T7), is connected electrically between described the first transistor (T1) and the 3rd power supply (ELVL), and the grid of described 7th transistor (T7) is electrically connected to described three scan line (Sn3);
8th transistor (T8), is connected electrically between described the first transistor (T1) and described 5th transistor (T5), and the grid of described 8th transistor (T8) is electrically connected to described 4th sweep trace (Sn4);
First capacitor (C1), is electrically connected to described first power supply (ELVDD);
Described Organic Light Emitting Diode (OLED) is electrically connected to second source (ELVSS).
2. image element circuit according to claim 1, is characterized in that, described first power supply (ELVDD) is high level voltage source, and described second source (ELVSS) is low level voltage source.
3. image element circuit according to claim 2, is characterized in that, each transistor is polycrystalline SiTFT or metal oxide semiconductor films transistor.
4. image element circuit according to claim 3, it is characterized in that, Section Point (N2) is electrically connected with the grid of described third transistor (T3), the source electrode of described 4th transistor (T4) and described first capacitor (C1) respectively, and described 3rd power supply (ELVL) equals the absolute value of the voltage difference of described Section Point (N2) and described first power supply (ELVDD) with the absolute value of the voltage difference of described Section Point (N2).
5. a driving method for the arbitrary described image element circuit of claim 1-4, is characterized in that, the scan period of every row pixel is divided into first time period (t1), the second time period (t2) and the 3rd time period (t3), comprises the steps:
S1, described first time period (t1) period, scanner driver output low level sweep signal to the second sweep trace (Sn2) and three scan line (Sn3), conducting the 4th transistor (T4), the first transistor (T1) and the 7th transistor (T7), make the voltage of the 3rd power supply (ELVL) be supplied to third transistor (T3) as resetting voltage;
S2, in described second time period (t2) period, described scanner driver output low level sweep signal to the second sweep trace (Sn2) and the 4th sweep trace (Sn4), conducting transistor seconds (T2), the 4th transistor (T4) and the 8th transistor (T8), because described third transistor (T3) was initialised in described first time period (t1) period, so third transistor (T3) forward conduction, the first capacitor (C1) is charged;
S3, described 3rd the time period (t3) period, described scanner driver output low level sweep signal to the first sweep trace (Sn1), conducting the 5th transistor (T5) and the 6th transistor (T6), drive current flows to second source (ELVSS), current line pixel luminescence display image along the first power supply (ELVDD) through described 5th transistor (T5), described third transistor (T3), described 6th transistor (T6) and Organic Light Emitting Diode (OLED).
6. the driving method of image element circuit according to claim 5, is characterized in that, described first power supply (ELVDD) is high level voltage source, and described second source (ELVSS) is low level voltage source.
7. the driving method of image element circuit according to claim 6, is characterized in that, each transistor is polycrystalline SiTFT or metal oxide semiconductor films transistor.
8. the driving method of image element circuit according to claim 7, it is characterized in that, Section Point (N2) is electrically connected with the grid of described third transistor (T3), the source electrode of described 4th transistor (T4) and described first capacitor (C1) respectively, and described 3rd power supply (ELVL) equals the absolute value of the voltage difference of described Section Point (N2) and described first power supply (ELVDD) with the absolute value of the voltage difference of described Section Point (N2).
9. an active array organic light emitting display device, is characterized in that, comprises the arbitrary described image element circuit of claim 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310481733.7A CN104575367B (en) | 2013-10-15 | 2013-10-15 | A kind of image element circuit and its driving method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310481733.7A CN104575367B (en) | 2013-10-15 | 2013-10-15 | A kind of image element circuit and its driving method and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104575367A true CN104575367A (en) | 2015-04-29 |
| CN104575367B CN104575367B (en) | 2017-10-13 |
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| CN108735152A (en) * | 2018-05-28 | 2018-11-02 | 昆山国显光电有限公司 | Driving circuit, pixel circuit, its driving method and display device |
| CN108847186A (en) * | 2018-06-29 | 2018-11-20 | 昆山国显光电有限公司 | Pixel circuit and its driving method, display panel and display device |
| CN110176213A (en) * | 2018-06-08 | 2019-08-27 | 京东方科技集团股份有限公司 | Pixel circuit and its driving method, display panel |
| CN112771603A (en) * | 2018-09-28 | 2021-05-07 | 夏普株式会社 | Display device and driving method thereof |
| WO2022011825A1 (en) * | 2020-07-15 | 2022-01-20 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit and driving method therefor, and display device |
| CN114170967A (en) * | 2021-12-22 | 2022-03-11 | 云谷（固安）科技有限公司 | Array substrate, manufacturing method of array substrate and display panel |
| WO2022217626A1 (en) * | 2021-04-12 | 2022-10-20 | 武汉华星光电半导体显示技术有限公司 | Pixel driving circuit and driving method therefor, and display panel |
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| CN112771603A (en) * | 2018-09-28 | 2021-05-07 | 夏普株式会社 | Display device and driving method thereof |
| CN112771603B (en) * | 2018-09-28 | 2023-07-11 | 夏普株式会社 | Display device and driving method thereof |
| WO2022011825A1 (en) * | 2020-07-15 | 2022-01-20 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit and driving method therefor, and display device |
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